CN117352986A - Waveguide and method for manufacturing the same - Google Patents
Waveguide and method for manufacturing the same Download PDFInfo
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- CN117352986A CN117352986A CN202311269163.5A CN202311269163A CN117352986A CN 117352986 A CN117352986 A CN 117352986A CN 202311269163 A CN202311269163 A CN 202311269163A CN 117352986 A CN117352986 A CN 117352986A
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- 238000000034 method Methods 0.000 title claims abstract description 59
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- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000002360 preparation method Methods 0.000 claims abstract description 23
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 24
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- 238000005530 etching Methods 0.000 claims description 14
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 11
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- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 238000001312 dry etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000000543 intermediate Substances 0.000 description 28
- 238000010586 diagram Methods 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 15
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
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- 230000003287 optical effect Effects 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
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- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/006—Manufacturing dielectric waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The embodiment of the application provides a waveguide and a preparation method thereof, wherein a film is firstly prepared, then a functional layer of the film is etched to obtain an intermediate, then metal electrodes are arranged on two sides of the intermediate, and finally the polarity of at least part of the intermediate is inverted by applying voltage to the metal electrodes to form the waveguide. Compared with the method for preparing the waveguide in the prior art, the preparation process is simple, the time consumption is short, and the quality of the prepared waveguide is better.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a waveguide and a preparation method thereof.
Background
A waveguide is a dielectric device used to direct electromagnetic waves. For example, it may confine the light beam to a specific area, enabling light to travel along a specific path. Lithium niobate and lithium tantalate materials are two common waveguide materials, which are widely used in the field of optical devices due to their excellent electro-optical and nonlinear optical properties. Illustratively, a lithium niobate thin film waveguide is an optical waveguide device fabricated using a lithium niobate thin film, which can limit and conduct optical waves, and realize transmission and control of optical signals.
In the preparation process of the waveguide, two films are bonded together, then the bonded body is annealed, and finally the functional layer obtained by the processing is etched.
However, existing waveguide fabrication processes are complex, time consuming and produce waveguides of poor quality.
Disclosure of Invention
The embodiment of the application provides a waveguide and a preparation method thereof, which are used for solving the problems that the existing waveguide preparation process is complex, the time consumption is long and the quality of the prepared waveguide is poor.
In a first aspect, embodiments of the present application provide a waveguide preparation method, including:
preparing a film, wherein the film at least comprises a functional layer;
etching the functional layer to obtain an intermediate;
metal electrodes are arranged on two sides of the intermediate;
and applying a voltage to the metal electrode to invert the polarity of at least a portion of the intermediate to form a waveguide.
In one possible implementation, disposing metal electrodes on both sides of the intermediate body includes: along the extending direction of the intermediate, metal electrodes with the length greater than or equal to that of the intermediate are respectively arranged on two sides of the intermediate.
In one possible implementation, metal electrodes are prepared on both sides of the intermediate using a metal stripping process.
In one possible implementation, the metal electrode may be made of at least one of copper, gold, titanium, platinum, molybdenum, ruthenium, chromium, aluminum, or tin.
In one possible implementation, the waveguide preparation method further includes:
after applying a voltage across the electrodes to reverse the polarity of at least some of the intermediates, the electrodes are removed.
In one possible implementation, the film further includes an isolation layer and a substrate, and the functional layer, the isolation layer, and the substrate are sequentially stacked.
In one possible implementation, the film further includes a defect layer, the defect layer being disposed in a stack between the isolation layer and the substrate.
In one possible implementation, the material of the functional layer may be at least one of lithium niobate crystal, lithium tantalate crystal, potassium titanyl phosphate crystal, or rubidium titanyl phosphate crystal;
and/or the substrate may be at least one of lithium niobate, lithium tantalate, SOI, quartz, silicon, sapphire, silicon carbide, silicon nitride, gallium arsenide, or indium phosphide;
and/or the material of the defect layer can be at least one of polysilicon, polycrystalline germanium or amorphous silicon;
and/or the thickness of the substrate ranges from 0.3mm to 0.8mm;
and/or the thickness of the isolation layer ranges from 50nm to 1000nm;
and/or the thickness of the functional layer ranges from 50nm to 3000nm.
In one possible implementation, the etching process includes at least one of a wet etching process, a dry etching process, or a focused ion beam etching process.
On the other hand, the embodiment of the application also provides a waveguide, which is prepared by the waveguide preparation method according to the first aspect.
The embodiment of the application provides a waveguide preparation method, which comprises the steps of firstly preparing a film, then etching a functional layer of the film to obtain an intermediate, arranging metal electrodes on two sides of the intermediate, and finally applying voltage to the metal electrodes to enable the polarity of at least part of the intermediate to be inverted to form a waveguide. Compared with the method for preparing the waveguide in the prior art, the preparation process is simple, the time consumption is short, and the quality of the prepared waveguide is better.
The embodiment of the application also provides a waveguide which is prepared by the waveguide preparation method in any one of the technical schemes, and compared with the waveguide prepared by the prior art, the quality of the waveguide is better.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the present application and do not constitute a limitation on the invention.
In the drawings:
FIG. 1 is a schematic diagram of a first state in the art waveguide fabrication process;
FIG. 2 is a schematic diagram of a second state in the art waveguide fabrication process;
FIG. 3 is a schematic diagram of a third state in the art waveguide fabrication process;
FIG. 4 is a schematic diagram of a fourth state in the art waveguide fabrication process;
FIG. 5 is a schematic view of a fifth state in the art waveguide fabrication process;
FIG. 6 is a schematic diagram of a sixth state in the art waveguide fabrication process;
FIG. 7 is a flow chart of a method for preparing a waveguide according to an embodiment of the present application;
FIG. 8 is a first state diagram of a waveguide fabrication process according to one embodiment of the present application;
FIG. 9 is a second state diagram of a waveguide fabrication process according to one embodiment of the present application;
FIG. 10 is another second state diagram of a waveguide fabrication process according to one embodiment of the present application;
fig. 11 is a third state diagram of a waveguide fabrication process according to an embodiment of the present application.
Reference numerals illustrate:
100-film substrate; 200-isolating layer; 300-substrate; 400-functional layer; 500-a first film; 600-waveguide; 700-intermediates; 800-metal electrode; 900-second film.
Detailed Description
In order to better understand the technical solutions in the present application, the following description will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.
In the description of the embodiments of the present application, the terms "first," "second," are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless explicitly defined otherwise.
Lithium niobate and lithium tantalate crystals have been widely used in various core electronic components such as surface acoustic wave devices, thin film bulk acoustic resonators, photosensors, ferroelectric memories, and the like, because of their own excellent optical properties such as piezoelectric, ferroelectric, photoelectric, photoelastic, pyroelectric, photorefractive, and nonlinear optical properties. Since both lithium niobate and lithium tantalate crystals are ferroelectric crystals, the lithium niobate and lithium tantalate crystals have spontaneous polarization, and the direction of electric dipole moment can be changed under the action of an external electric field, exhibiting a polarization inversion phenomenon. The lithium niobate crystal obtained by the Z-direction cutting (hereinafter referred to simply as Z-tangential lithium niobate crystal) has spontaneous polarization and can exhibit a phenomenon of polarization reversal under the action of an external electric field. In addition, the Z tangential lithium niobate crystal has not only the above spontaneous polarization and polarization reversal phenomena, but also optical properties such as piezoelectricity, photoelectricity, photoelastic, pyroelectric, photorefractive, and nonlinearity. Therefore, Z-tangential lithium niobate wafers and Z-tangential lithium tantalate wafers are common base materials in the art.
FIG. 1 is a schematic diagram of a first state in the fabrication of a prior art waveguide 600; FIG. 2 is a schematic diagram of a second state in the fabrication of a prior art waveguide 600; FIG. 3 is a schematic diagram of a third state in the fabrication of a prior art waveguide 600; FIG. 4 is a schematic diagram of a fourth state in the fabrication of a prior art waveguide 600; FIG. 5 is a schematic diagram of a fifth state in the fabrication of a prior art waveguide 600; fig. 6 is a schematic diagram of a sixth state in the fabrication of a prior art waveguide 600.
Referring to fig. 1 to 3, at least two first films 500 are first prepared, specifically including: firstly, ion implantation is carried out on a film substrate 100, then one side of a film layer of the film substrate 100 is bonded with an isolation layer 200 prepared on a substrate 300 layer, and then the film layer is transferred onto the isolation layer 200 by high-temperature annealing to form a first film 500; wherein each first film 500 includes at least a functional layer 400, a separation layer 200, and a substrate 300, which are stacked. Next, the functional layers 400 of the two prepared first films 500 are bonded together to form a bonded body, as shown in fig. 4; then, the bonded body is annealed at a high temperature to remove the isolation layer 200 and the substrate 300 in the upper first thin film 500, and a second thin film 900 is obtained, that is, the second thin film 900 has two functional layers 400 with opposite polarities and stacked, as shown in fig. 5; finally, the functional layer 400 of the second film 900 is etched to form a waveguide 600, as shown in particular in fig. 6.
As described above, the preparation process of the waveguide 600 in the prior art includes the steps of preparing the first thin film 500 twice, bonding the two first thin films 500 to each other, and high-temperature annealing and etching the bonding, and the process flow is complex and takes a long time. In addition, when the spacer 200 and the substrate 300 are separated by high-temperature annealing, the bonded body formed by the two first films 500 is liable to cause air pocket defects inside due to the high temperature, which affects the quality of the second film 900 and ultimately affects the quality of the waveguide 600.
In order to solve the problems of complicated preparation process, long time consumption and poor quality of the prepared waveguide 600 in the prior art, the embodiment of the present application provides a preparation method of the waveguide 600, and the following details of the solution provided in the embodiment of the present application will be described with reference to the drawings of the specification.
FIG. 7 is a flow chart of a method for fabricating a waveguide 600 according to an embodiment of the present application, and FIG. 8 is a first state diagram of a waveguide fabrication process according to an embodiment of the present application; FIG. 9 is a second state diagram of a waveguide fabrication process according to one embodiment of the present application; FIG. 10 is another second state diagram of a waveguide fabrication process according to one embodiment of the present application; fig. 11 is a third state diagram of a waveguide fabrication process according to an embodiment of the present application.
Referring to fig. 7, a method of preparing a waveguide 600 includes:
s100: the first film 500 is prepared, and the first film 500 includes at least the functional layer 400.
Illustratively, first, a single crystal implant prepared based on an ion implantation method is bonded to a process surface of a substrate 300 to form a bonded body, wherein the single crystal implant sequentially includes a thin film layer, an implant layer, and a residual material layer.
Specifically, before preparing the first film 500, the film base 100 and the substrate 300 are first prepared.
Wherein the thin film substrate 100 is selected from at least one of lithium niobate crystal, lithium tantalate crystal, potassium titanyl phosphate crystal, rubidium titanyl phosphate crystal, silicon carbide, quartz, silicon oxide, aluminum nitride, gallium arsenide, or silicon. The thin film substrate 100 of the present invention optionally includes, but is not limited to, the single crystal materials described above.
Wherein the substrate 300 may be at least one of lithium niobate, lithium tantalate, SOI, quartz, silicon, sapphire, silicon carbide, silicon nitride, gallium arsenide, or indium phosphide. The substrate 300 of the present invention optionally includes, but is not limited to, the substrate 300 materials described above. The SOI substrate is a composite substrate and comprises a silicon substrate, an insulating layer and a top silicon structure substrate.
In this step, the selected ions are implanted into the thin film substrate 100 by an ion implantation method to obtain a single crystal implanted wafer including a thin film layer, an implanted layer, and a residual material layer which are stacked. The film layer is positioned at the uppermost layer, the residual material layer is positioned at the bottommost layer, the injection layer is positioned between the film layer and the residual material layer, and ions injected by an ion injection method are distributed in the injection layer.
The method of ion implantation is not particularly limited, and any method of ion implantation in the prior art may be used, and the implanted ions may be ions capable of generating a gas by heat treatment, for example: the implanted ions may be at least one of hydrogen ions, helium ions, nitrogen ions, oxygen ions, or argon ion plasma.
In some possible embodiments, the ion beam of the ion implantation method may be selected from at least one of a helium ion beam, a hydrogen ion beam, a nitrogen ion beam, an oxygen ion beam, and an argon ion beam. The ion beam selected by the present invention includes, but is not limited to, the implanted ions described above; exemplary, the implant dose range of the ion beam may be 1×10 16 ions/cm 2 -8×10 16 ions/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The implantation energy ranges from 50keV to 1000keV, and selected ions have been implanted to a specified location to form an implanted layer.
For example, when hydrogen ions are implanted, the implantation dose may be 3×10 16 ions/cm 2 ～8×10 16 ions/cm 2 The implantation energy may be 120KeV to 400KeV; when helium ions are injected, the injection dosage can be 1×10 16 ions/cm 2 ～1×10 17 ions/cm 2 The implantation energy may be 50KeV to 1000KeV. For example, in the case of hydrogen ion injection, the injection dose may be 4×10 16 ions/cm 2 The implant energy may be 180KeV; when helium ions are injected, the injection dosage is 4×10 16 ions/cm 2 The implantation energy was 200KeV.
It will be appreciated that the thickness of the thin film layer may be adjusted by adjusting the ion implantation depth, in particular, the greater the ion implantation depth, the greater the thickness of the thin film layer prepared; conversely, the smaller the depth of ion implantation, the smaller the thickness of the thin film layer prepared.
In addition, when ion implantation is performed on the film base 100, the diffusion width of the implanted layer can be adjusted by adjusting the ion implantation dose, specifically, the larger the ion implantation dose, the wider the diffusion width of the implanted layer; conversely, the smaller the dose of ion implantation, the narrower the diffusion width of the implanted layer.
After the ion implantation is completed, the thin film layer is bonded to the process surface of the substrate 300 in a contact manner, so that the thin film layer, the implanted layer, the residual material layer and the substrate 300 are combined to form a bonded body.
In some possible embodiments, the isolation layer 200 is prepared on the process side of the substrate 300 before bonding the single crystal implant prepared based on the ion implantation method to the process side of the substrate 300; illustratively, the isolation layer 200 is fabricated by a deposition method or an oxidation method, and the isolation layer 200 is made of at least one of silicon dioxide, silicon oxynitride or silicon nitride.
In the above embodiment, the steps are taken in which the substrate 300 on which the isolation layer 200 has been prepared is first prepared. The thin film layer is contact-bonded with the isolation layer 200 on the substrate 300 such that the thin film layer, the implant layer, the residual material layer, the isolation layer 200, and the substrate 300 are combined to form a bond.
Next, the bond is annealed to strip the excess material layer from the bond along the implanted layer, and the thin film layer is transferred to the substrate 300. In this step, the bonded body formed in the previous step is heat annealed, and the bonded body is placed in an annealing furnace, heated to 180-300 ℃ and kept for 1-100 hours, so that the residual material layer is peeled from the bonded body along the injection layer, and the thin film layer is transferred onto the substrate 300.
The portion including the thin film layer and the substrate 300 is then annealed at 300-600 c for 1-100 hours to eliminate lattice damage.
And then, fixing the first film 500 obtained in the previous step on polishing equipment, polishing the functional layer of the first film 500 by using the polishing equipment, improving the uniformity of the film layer, improving the roughness of the film layer and reducing the thickness of the film layer to enable the film layer to reach the target thickness, and obtaining a finished product of the first film 500. After the film layer in the film substrate 100 is transferred onto the isolation layer 200, it is referred to as a functional layer 400 for convenience of description. The functional layer 400 is used in the first thin film 500 to realize functions of piezoelectricity, ferroelectric, photoelectric, photoelastic, pyroelectric, photorefractive, nonlinear, and the like. Illustratively, the first film 500 includes a functional layer 400, a barrier layer 200, and a substrate 300, which are sequentially stacked from top to bottom, as shown in fig. 9.
In some examples, to ensure the performance of the first thin film 500, the thickness of the substrate 300 may range from 0.3mm to 0.8mm, the thickness of the isolation layer 200 may range from 50nm to 1000nm, and the thickness of the functional thin film layer may range from 50nm to 3000nm. Illustratively, the thickness of the substrate 300 may be 0.5mm, the thickness of the isolation layer 200 may be 200nm, and the thickness of the functional layer 400 may be 400nm.
In addition, when the functional layer 400 is a multi-layer thin film layer structure, the isolation layer 200 may be disposed between adjacent thin film layers, and the isolation layer 200 may prevent signal crosstalk between the adjacent thin film layers. The plurality of thin film layers may be made of the same material or different materials. The isolation layer 200 may be silicon dioxide or silicon nitride.
In some possible embodiments, the first thin film 500 further includes a defect layer, that is, the first thin film 500 includes the functional layer 400, the isolation layer 200, the defect layer, and the substrate 300, which are sequentially stacked from top to bottom. In the fabrication of such a first film 500, a defect layer may be first fabricated on the substrate 300, and then the isolation layer 200 may be fabricated on the defect layer. Illustratively, the material of the defect layer is at least one of polysilicon, amorphous silicon, or poly-germanium. Illustratively, the defect layer may be formed by depositing polysilicon by deposition, amorphous silicon by deposition, polycrystalline germanium by deposition, etching the substrate 300 by etching, or implanting the substrate 300 by implantation to create implantation damage. Then, a deposition method or an oxidation method is adopted to manufacture an isolation layer 200 on the defect layer, and the isolation layer 200 is made of at least one of silicon dioxide, silicon oxynitride or silicon nitride.
Wherein, lattice defects with a certain density exist in the defect layer, which can capture carriers existing between the isolation layer 200 and the substrate 300, avoid the carriers from causing the carrier aggregation at the interface of the isolation layer 200 and the substrate 300, and reduce the loss of the first film 500. The defect layer may have a thickness of 300nm to 5000nm, for example.
In some examples, when the defect layer is a polysilicon layer, the polysilicon layer is oxidized, and the isolation layer 200 is made of silicon dioxide. The method of preparing the isolation layer 200 by deposition is not limited, and may be a Chemical Vapor Deposition (CVD), a Physical Vapor Deposition (PVD), a magnetron sputtering, or the like.
When the isolation layer 200 is prepared by an oxidation method, the polysilicon layer is subjected to an oxidation treatment. Wherein, the side of the polysilicon layer far away from the substrate 300 is oxidized to form a silicon dioxide layer, forming an isolation layer 200, and the side of the polysilicon layer near the substrate 300 is not oxidized; illustratively, the oxidation temperature at which the barrier layer 200 is prepared by the oxidation process may be 900-1000 ℃.
In the above embodiment, the steps adopted are that the substrate 300 is prepared first, then the defect layer is prepared on the substrate 300, then the isolation layer 200 is prepared on the defect layer to form the composite substrate, and the isolation layer 200 of the prepared composite substrate is contacted and bonded with the thin film layer, so that the thin film layer, the injection layer, the residual material layer, the isolation layer 200, the defect layer and the substrate 300 are combined to form the bonded body.
S200: the functional layer 400 is etched to obtain an intermediate 700.
Specifically, the functional layer 400 of the first film 500 is etched by using an etching apparatus and a corresponding etching method, so as to form a desired waveguide 600 structure. Illustratively, the cross-section of the waveguide 600 structure may be trapezoidal in shape with different dimensions. In some examples, the material of the functional layer 400 is lithium niobate, and the etching method may be at least one of wet etching, dry etching, or FIB (focused ion beam)) etching. It should be noted that, the intermediate body 700 is an intermediate state object of the waveguide 600 in the preparation process, and is described as such for convenience of description.
S300: metal electrodes 800 are provided on both sides of the intermediate body 700.
Illustratively, a metal electrode 800 is prepared on both sides of the intermediate body 700 using a metal lift-off process, as shown in fig. 9 and 10. In order to enhance the effect of the metal electrode 800 on the polarity inversion of the intermediate body 700, the metal electrode 800 having a length greater than or equal to the length of the intermediate body 700 may be disposed on both sides of the intermediate body 700 along the extension direction of the intermediate body 700, that is, the disposed region of the metal electrode 800 covers the region of the intermediate body 700 where the polarity is to be inverted.
The height of the metal electrode 800 may be set according to the requirement, for example, if the polarity of the portion of the intermediate 700 needs to be reversed, the height of the metal electrode 800 needs to be the same as the height of the portion, as shown in fig. 9; if all of the intermediate body 700 needs to be subjected to the polarity inversion process, the height of the metal electrode 800 needs to be equal to or higher than the height of the intermediate body 700, as shown in fig. 10. The metal electrode 800 is preferably made of a metal material having good electrical conductivity, and may be at least one of copper (Cu), gold (Au), titanium (Ti), platinum (Pt), molybdenum (Mo), ruthenium (Ru), chromium (Cr), aluminum (Al), and tin (Sn).
In addition, if the functional layer 400 is etched to the isolation layer 200 in the previous step, the metal electrode 800 needs to be prepared on the surface of the isolation layer 200, and if the functional layer 400 is not etched to the isolation layer 200, the metal electrode 800 needs to be disposed on the remaining functional layer 400.
S400: application of a voltage to the metal electrode 800 causes at least a portion of the intermediate 700 to reverse polarity, forming the waveguide 600. Illustratively, it is first necessary to determine the magnitude of the maximum voltage Vmax of the pulse voltage. Taking the material of the functional layer 400 as lithium niobate for illustration, vmax should be larger than the coercive field value of lithium niobate x electrode gap d, domain inversion is difficult to realize by too small voltage, and lateral expansion is serious by too large voltage, so Vmax is generally smaller than the coercive field value of lithium niobate x electrode gap d (1+50%); wherein, the electrode gap d has an optional value range of 4-10 um, and the specific value can be adjusted according to different waveguide preparation requirements.
In the actual voltage applying process, periodically polarizing the voltage with the voltage value which can observe domain inversion and is 10V higher as the maximum voltage Vmax; the pulse voltage waveform is initially set to be a trapezoidal wave, the trapezoidal wave comprises a rapid ascending section, a high voltage duration section and a slow descending section, and the corresponding time sections are t1, t2 and t3 respectively.
For example, the coercive field of lithium niobate may be selected to have a value ranging from 11V/μm to 21V/μm, and when the electrode gap d is preferably 10 μm, the polarization voltage Vmax may be set to be between 210 and 300V, and a value slightly larger than the domain inversion voltage of lithium niobate just occurs may be selected, so that the success rate of domain inversion may be improved.
On the one hand, the corresponding t1, t2 and t3 of the pulse voltage and the pulse quantity are adjusted, so that the duty ratio of the domain inversion area reaches as ideal as possible to 50%; the fast rising edge t1 can promote the formation of nucleation sites, has little influence in a selected range, only needs a small amount of tests or adopts a fixed value according to experience, and the voltage higher than the coercive field enables the domain to grow, so that the high voltage duration t2 is matched with the pulse number, and compared with the single pulse for completing domain polarization at one time, the multi-pulse fixed interval application is more beneficial to improving the success rate of polarization and preventing electrode damage, but longer acting time is needed. The slow falling edge t3 avoids depolarization, has little effect in the selected range, and requires only a few tests or empirically uses a fixed value.
On the other hand, the intermediate 700 is repeatedly polarized by the pulse voltage Vmax, and the success rate can be improved as well. When the voltage inversion restores the domain inverted region, a voltage value slightly higher than the selected pulse voltage and more pulses can be adopted, so that the return effect is ensured. For example, the pulse voltage can be increased by 3-5V and the pulse number can be increased by 5-10 in the process of repeated activation.
S500: the metal electrode 800 is removed to obtain a waveguide, as shown in fig. 11.
Compared with the method for preparing the waveguide 600 in the prior art, the method for preparing the waveguide 600 provided by the embodiment of the application only needs to prepare the first film 500 once, and simultaneously only performs one-time bonding (single-layer bonding) operation in the whole preparation process, so that the preparation process is simplified, the preparation time is reduced, and the preparation success rate is improved; in addition, since only one bonding (single-layer bonding) is needed when the first film 500 is prepared, when the sustainable annealing temperature can be higher than 600 degrees in the annealing and peeling process, the probability of occurrence of defects of the steam pockets can be effectively reduced, the quality of a new film obtained after bonding is improved, and the quality of the waveguide 600 is further improved. Finally, due to different requirements of different users on the lithium niobate waveguide 600, the processing technology provided by the application can effectively improve the preparation efficiency of the lithium niobate waveguide 600 with different specifications by flexibly setting the height of the electrode.
On the other hand, the embodiment of the present application further provides a waveguide 600, where the waveguide 600 is manufactured according to the waveguide manufacturing method of the first aspect, and the quality of the waveguide 600 is better than that of the waveguide 600 manufactured by the prior art.
It is to be understood that, based on the several embodiments provided in the present application, those skilled in the art may combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments, where none of the embodiments exceed the protection scope of the present application.
The foregoing detailed description of the embodiments of the present application has further described the objects, technical solutions and advantageous effects thereof, and it should be understood that the foregoing is merely a specific implementation of the embodiments of the present application, and is not intended to limit the scope of the embodiments of the present application, and any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the scope of the embodiments of the present application.
Claims (10)
1. A method of preparing a waveguide, comprising:
preparing a film comprising at least a functional layer;
etching the functional layer to obtain an intermediate;
metal electrodes are arranged on two sides of the intermediate;
and applying a voltage to the metal electrode to cause at least part of the intermediate to reverse polarity, thereby forming the waveguide.
2. The method of manufacturing a waveguide according to claim 1, wherein disposing metal electrodes on both sides of the intermediate body comprises: and metal electrodes with the length greater than or equal to that of the intermediate body are respectively arranged on two sides of the intermediate body along the extending direction of the intermediate body.
3. The method of manufacturing a waveguide according to claim 1, wherein metal electrodes are manufactured on both sides of the intermediate body using a metal lift-off process.
4. The method of claim 3, wherein the metal electrode is at least one of copper, gold, titanium, platinum, molybdenum, ruthenium, chromium, aluminum, or tin.
5. The method of preparing a waveguide according to any one of claims 1-4, further comprising:
and after the polarity of at least part of the intermediate is reversed by applying a voltage to the electrode, removing the electrode.
6. The method of manufacturing a waveguide according to any one of claims 1 to 4, wherein the thin film further comprises an isolation layer and a substrate, and the functional layer, the isolation layer and the substrate are laminated in this order.
7. The method of manufacturing a waveguide according to claim 6, wherein the thin film further comprises a defect layer, the defect layer being stacked between the isolation layer and the substrate.
8. The method according to claim 7, wherein the functional layer is at least one of lithium niobate crystal, lithium tantalate crystal, potassium titanyl phosphate crystal, and rubidium titanyl phosphate crystal;
and/or the substrate may be at least one of lithium niobate, lithium tantalate, SOI, quartz, silicon, sapphire, silicon carbide, silicon nitride, gallium arsenide, or indium phosphide;
and/or the material of the defect layer can be at least one of polysilicon, polycrystalline germanium or amorphous silicon;
and/or the thickness of the substrate ranges from 0.3mm to 0.8mm;
and/or the thickness of the isolation layer ranges from 50nm to 1000nm;
and/or the thickness of the functional layer ranges from 50nm to 3000nm.
9. The method of manufacturing a waveguide according to any one of claims 1 to 4, wherein the etching treatment includes at least one of wet etching, dry etching, or focused ion beam etching.
10. A waveguide prepared according to the waveguide preparation method of any one of claims 1 to 9.
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