CN117352245A - High-precision chip thermistor and manufacturing method thereof - Google Patents
High-precision chip thermistor and manufacturing method thereof Download PDFInfo
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- CN117352245A CN117352245A CN202311412085.XA CN202311412085A CN117352245A CN 117352245 A CN117352245 A CN 117352245A CN 202311412085 A CN202311412085 A CN 202311412085A CN 117352245 A CN117352245 A CN 117352245A
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 claims abstract description 111
- 239000011241 protective layer Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000047 product Substances 0.000 claims description 42
- 238000005245 sintering Methods 0.000 claims description 35
- 239000011265 semifinished product Substances 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000009966 trimming Methods 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000009954 braiding Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000007605 air drying Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention provides a high-precision chip thermistor, which is characterized in that a pair of back electrodes, a first positive electrode layer, a first resistor layer, a second positive electrode layer, a first protective layer, a second protective layer, a side electrode, a back electrode and a third positive electrode layer are formed on a substrate.
Description
Technical Field
The invention relates to the technical field of resistor production, in particular to a high-precision chip thermistor and a manufacturing method thereof.
Background
A thermistor (thermistor) is a ceramic semiconductor whose resistance changes greatly with a change in temperature. Because of the sensitivity, accuracy and stability of thermistors, thermistors are often used as the most advantageous sensors in many applications, including temperature measurement, compensation and control.
The most important characteristic of thermistors is the extremely precise resistance with extremely high temperature coefficient of resistance and relative temperature characteristics. This sensitivity to temperature changes results in a change in the resistance value of the thermistor of tens of millions to one over the operating temperature range. However, the precision of the conventional printed thermistor is +/-5%, and the high precision requirement of the product on the market cannot be met.
Disclosure of Invention
In view of the shortcomings of the prior art, it is an object of the present invention to provide a method for manufacturing a high-precision chip thermistor, which solves the problems mentioned in the background section above.
The invention is realized by the following technical scheme:
a method for manufacturing a high-precision chip thermistor, the method comprising the steps of,
s1: printing electrode materials on the lower surface of a substrate to form a plurality of back electrodes which are spaced and not connected with each other, wherein the substrate is provided with a plurality of grain folding units, and the back electrodes are respectively arranged on two opposite sides of the lower surface of each grain folding unit at intervals;
s2: printing electrode materials on the upper surface of the substrate, and then sintering to form a first positive electrode layer, wherein the first positive electrode layer comprises a left electrode and a right electrode which are arranged on two opposite sides at intervals on each grain folding unit;
s3: printing a resistive material in the middle of the first positive electrode layer, and then sintering to form a first resistive layer, wherein one end of the first resistive layer extends to partially cover the upper surface of the left electrode, and the other end of the first resistive layer extends to partially cover the upper surface of the right electrode, and separates the left electrode from the right electrode;
s4: printing a resistance material on the first resistance layer again, and then sintering to form a second resistance layer, wherein the second resistance layer covers the upper surface of the first resistance layer;
s5: printing electrode materials on the second resistance layer, and then sintering to form a second positive electrode layer, wherein the second positive electrode layer partially covers the second resistance layer and is not overlapped with the first positive electrode layer;
s6: printing an insulating material on the second positive electrode layer, and then sintering to form a first protective layer, wherein the first protective layer completely covers and is sintered on the second resistance layer, and two ends of the first protective layer respectively extend to cover the left electrode and the right electrode;
s7: carrying out laser resistance trimming treatment on the product obtained in the step S6, and stopping after the product reaches a set resistance value;
s8: printing an insulating material on the first protective layer, and then sintering to form a second protective layer, wherein the second protective layer completely covers and is sintered on the first protective layer;
s9: carrying out heat treatment on the product obtained in the step S8;
s10: printing electrode materials on the upper surface of the first positive electrode layer which is not covered by the first resistance layer in the step S3, and then sintering to form a third positive electrode layer;
s11: performing a first separation operation on the product obtained by sintering in the step S10 to obtain a plurality of strip-shaped semi-finished products, and performing vacuum sputtering on the side surfaces of the strip-shaped semi-finished products to form side surface electrodes, wherein the side surface electrodes extend towards two ends to connect the first positive electrode layer, the third positive electrode layer and the back electrode;
s12: and (3) performing a second separation operation on the product obtained in the step (S11) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to one grain folding unit, and performing electroplating treatment on the granular semi-finished product to obtain the high-precision chip thermistor.
Further, in step S7, the laser trimming includes:
s701: measuring the resistance value of the product obtained in the step S6;
s702: the measured resistance value is transmitted to a matrix database for comparison and calculation to obtain a difference resistance value;
s703: and eliminating the difference resistance through laser trimming, and returning to the step S701 until the measured resistance is equal to the set resistance in the matrix database, and stopping returning to the step S701.
Further, in step S701, the product is placed in an oil tank to keep the temperature constant, the resistance of the product is measured by an electric bridge, and after the measurement is completed, the product is cleaned and air-dried by ultrasonic cleaning.
Further, in step S7, the laser trimming light source is a cold light source or a semi-cold light source;
further, in step S12, the side electrode is covered with a nickel layer and a tin layer in this order by plating treatment, and the defective high-precision chip thermistor is removed by magnetizing.
Further, in step S6, the sintering temperature is 600-700 degrees.
In step S9, the sintered product obtained in step S8 is left at normal temperature for 4H-12H, and then sintered at 220-280 ℃.
Further, the third positive electrode layer is filled between the side electrode and the first protective layer.
Further, after step S12, step S13 is further included,
step S13: and detecting the high-precision chip thermistor by controlling the environmental temperature to be in the range of 24-26 degrees, packaging the high-precision chip thermistor in a braiding belt after the high-precision chip thermistor is detected to be qualified, and taking the braiding belt into a reel.
A high-precision chip thermistor manufactured according to the manufacturing method described in any one of the above, the high-precision chip thermistor having a resistance value R of: r is more than or equal to 5 and less than or equal to 2MΩ.
According to the high-precision chip thermistor obtained by the method, the pair of back electrodes, the first positive electrode layer, the first resistor layer, the second positive electrode layer, the first protective layer, the second protective layer, the side electrode, the back electrode and the third positive electrode layer are formed on the substrate, the resistor layer is covered on the upper surface of the first front electrode, the third positive electrode layer is filled between the protective layer and the side electrode, the resistor resistance precision of the thermistor is guaranteed through laser resistor trimming treatment, and the resistor value precision can reach +/-0.5%.
Drawings
FIG. 1 is a schematic diagram of a manufacturing method of the present invention.
FIG. 2 is a schematic diagram of a high-precision chip thermistor according to the present invention;
fig. 3 is a schematic structural diagram of the manufacturing method of the present invention after step S0.
Fig. 4 is a schematic structural diagram of the manufacturing method of the present invention after step S1.
Fig. 5 is a schematic structural diagram of the manufacturing method of the present invention after step S2.
Fig. 6 is a schematic structural diagram of the manufacturing method of the present invention after step S3.
Fig. 7 is a schematic structural diagram of the manufacturing method of the present invention after step S5.
Fig. 8 is a schematic structural diagram of the manufacturing method of the present invention after step S10.
Wherein the above figures include the following reference numerals:
1. a substrate; 1a, a folding strip line; 1b, a grain folding line; 2. a back electrode; 3. a first positive electrode layer; 3a, left electrode; 3b, right electrode; 4. a first resistive layer; 5. a second resistive layer; 6. a second positive electrode layer; 7. a first protective layer; 8. a second protective layer; 9. a third positive electrode layer; 10. a side electrode; 11. a nickel layer; 12. and a tin layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.
S0: the substrate 1 is obtained, as shown in fig. 3, in which a plurality of crease lines 1a extending in a first direction and a plurality of crease lines 1b extending in a second direction are uniformly formed on the upper surface and the lower surface of the substrate 1 in advance, the first direction and the second direction are substantially perpendicular, the crease lines 1a and the crease lines 1b are crossed to form a grid, and each grid constitutes one crease unit. Specifically, the first direction is the width direction of the substrate 1, and the second direction is the length direction of the substrate 1. Preferably, the substrate 1 is a ceramic substrate, and the ceramic substrate has a size of 60mm by 70mm.
S1: as shown in fig. 4, electrode materials are printed on the lower surface of the substrate 1 to form a plurality of back electrodes 2 which are spaced apart from each other and are not connected with each other, wherein the substrate 1 is provided with a plurality of particle folding units, the back electrodes 2 are respectively arranged on two opposite sides of the lower surface of each particle folding unit at intervals, and the back electrodes 2 are parallel to the second direction.
Preferably, in step S1, the sintering temperature is 800-900 ℃, preferably 855-860 ℃ and the sintering time is 6-15 min. Electrode materials include, but are not limited to, conductive pastes containing metals such as silver.
S2: as shown in fig. 5, electrode materials are printed on the upper surface of the substrate 1 in a uniformly spaced array without being connected to each other, and then sintered to form a first positive electrode layer 3, wherein the first positive electrode layer 3 includes left and right electrodes 3a and 3b disposed at opposite sides at intervals on each of the pellet folding units.
Preferably, in step S2, the sintering temperature is 800-900 ℃, preferably 855-860 ℃ and the sintering time is 6-15 min. Electrode materials include, but are not limited to, conductive pastes containing metals such as silver.
S3: as shown in fig. 6, a resistive material is printed in the middle of the first positive electrode layer 3, and then sintered to form a first resistive layer 4, one end of the first resistive layer 4 extends to partially cover the upper surface of the left electrode 3a, and the other end of the first resistive layer 4 extends to partially cover the upper surface of the right electrode 3b, and the left electrode 3a is spaced apart from the right electrode 3b by a gap.
Preferably, in step S3, the sintering temperature is 800-900 ℃, preferably 855-860 ℃ and the sintering time is 6-15 min. Resistive materials include, but are not limited to, metal oxide containing semiconductor ceramic slurries.
S4: the resistive material is printed again on the first resistive layer 4, and then sintered to form a second resistive layer 5, and the second resistive layer 5 covers the upper surface of the first resistive layer 4.
Preferably, in step S4, the sintering temperature is 800-900 ℃, preferably 855-860 ℃ and the sintering time is 6-15 min. Resistive materials include, but are not limited to, metal oxide containing semiconductor ceramic slurries.
In steps S3 and S4, the semiconductor ceramic slurry has a characteristic that the resistance decreases correspondingly with an increase in temperature, and most of the market demands are low resistance. According to the resistance law r=ρl/S, the cross-sectional area of the resistive layer becomes large and the resistance value decreases, so that setting the second resistive layer 5 to increase the resistive cross-sectional area can effectively reduce the resistance value. After the second resistor layer 5 is arranged, the surface of the resistor layer is smoother, the concentration of the resistor value is higher, and the subsequent laser resistor repairing process is convenient.
S5: as shown in fig. 7, an electrode material is printed on the second resistive layer 5, and then sintered to form the second positive electrode layer 6, wherein the second positive electrode layer 6 partially covers the second resistive layer 5 and is not overlapped with the first positive electrode layer 3.
By designing different sizes of the second positive electrode layer 6, the ratio of the cross sectional areas of the second positive electrode layer 6 and the second resistor layer 5 is changed, and the reserved resistor value of the required resistor value is obtained, and is subjected to resistance repairing treatment through a subsequent laser resistance repairing process.
Preferably, in step S5, the sintering temperature is 800-900 ℃, preferably 855-860 ℃ and the sintering time is 6-15 min. Electrode materials include, but are not limited to, conductive pastes containing metals such as silver.
S6: an insulating material is printed on the second positive electrode layer 6, and then sintered to form a first protective layer 7, wherein the first protective layer 7 completely covers and is sintered to the second resistive layer 5, and both ends extend to cover the left electrode 3a and the right electrode 3b, respectively.
Preferably, in step S6, the sintering temperature is 600-700 ℃, preferably 555-560 ℃, and the sintering time is 6-15 min. Insulating materials include, but are not limited to, glass pastes.
S7: and (3) carrying out laser resistance trimming treatment on the product obtained in the step (S6), and stopping after the product reaches a set resistance value.
Specifically, in step S7, the laser trimming includes:
s701: measuring the resistance value of the product obtained in the step S6;
s702: the measured resistance value is transmitted to a matrix database for comparison and calculation to obtain a difference resistance value;
s703: and eliminating the difference resistance through laser trimming, and returning to the step S701 until the measured resistance is equal to the set resistance in the matrix database, and stopping returning to the step S701.
The measurement of the resistance value of the product in steps S701 to S703 employs the following equipment: firstly, placing a product in a constant-temperature oil groove, and then measuring the resistance of the product through an electric bridge; secondly, after the measured resistance value of the product is over, conveying the product to an ultrasonic cleaning air dryer for cleaning and air drying by a conveying device; thirdly, conveying the cleaned and air-dried product to a laser machine for repairing by a conveying device; fourthly, returning the product after finishing the resistance repair to the constant-temperature oil groove to confirm whether the resistance meets the requirements, if so, performing the operation of the step S8, otherwise, repeating the operations of the steps S701 to S703.
Wherein, newly add temperature control system, radiating element, temperature controller and platinum class temperature sensor etc. at current laser machine inside working area, guarantee the constancy of laser machine to product processing time temperature through above-mentioned structure. The laser repairing light source used by the laser machine adopts a cold light source or a semi-cold light source (such as green light or ultraviolet light), so that the laser thermal influence of the light source used by the laser repairing is reduced, the constancy of the temperature during product repairing is ensured, the influence of the external temperature on the product resistance value is avoided, and the influence on the precision of the laser repairing process on the product repairing is caused.
The matrix database contains the corresponding resistance values of the thermistor to be repaired at different temperatures, so that dynamic measurement and repair are completed.
S8: an insulating material is printed on the first protective layer 7, and then sintered to form a second protective layer 8, wherein the second protective layer 8 completely covers and is sintered to the first protective layer 7.
Preferably, in step S8, the sintering temperature is 220-280 ℃, preferably 245-265 ℃, and the sintering time is 6-15 min. Insulating materials include, but are not limited to, epoxy paste.
S9: carrying out heat treatment on the product obtained in the step S8;
specifically, in step S9, the sintered product of step S8 is left at normal temperature for 4H-12H, and then sintered at 220-280 ℃. The heat treatment can release the stress in the product, so that the performance of the product is more stable, and the sensitivity of the product to temperature induction and different applicable temperatures can be controlled and adjusted by carrying out different combinations on the temperature and the time of the heat treatment.
S10: as shown in fig. 8, an electrode material is printed on the upper surface of the first positive electrode layer 3 that is not covered by the first resistive layer 4 in step S3, and then sintered to form a third positive electrode layer 9; wherein a third positive electrode layer 9 is filled between the side electrode 10 and the first protective layer 7, the third positive electrode layer 9 functioning as a vulcanization resistance and a corresponding appearance improvement.
Preferably, in step S10, the sintering temperature is 220-280 ℃, preferably 245-265 ℃, and the sintering time is 6-15 min. Insulating materials include, but are not limited to, epoxy paste.
S11: the product obtained by sintering S10 is subjected to a first separation operation to obtain a plurality of strip-shaped semi-finished products, the side surfaces of the strip-shaped semi-finished products are subjected to vacuum sputtering to form side surface electrodes 10, and the side surface electrodes 10 extend to two ends to connect the first positive electrode layer 3, the third positive electrode layer 9 and the back electrode 2.
Specifically, in step S10, the first separating operation is a folding operation, i.e., folding the substrate 1 into a strip-shaped semi-finished product according to the position of the folding line 1 a. Specifically, when the third positive electrode layer 9 covers the first positive electrode layer 3, the side electrodes 10 extend toward both ends to connect the first positive electrode layer 3, the third positive electrode layer 9, and the back electrode 2.
S12: and (3) performing a second separation operation on the product obtained in the step (S11) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to a granule folding unit, and performing electroplating treatment on the granular semi-finished product to obtain the high-precision chip thermistor.
Specifically, the side electrode 10 is covered with the nickel layer 11 and the tin layer 12 in this order by the plating treatment, and the defective high-precision chip thermistor is removed by magnetization. The nickel layer 11 is used to form a protection for the resistor, and the nickel layer 11 is used to make the resistor with good solderability.
Step S13: the high-precision chip thermistor is detected by controlling the environmental temperature range to be 24-26 degrees, and the high-precision chip thermistor is packaged in a braid after the high-precision chip thermistor is detected to be qualified and is wound into a reel.
The embodiment also provides a high-precision chip thermistor which is manufactured by the manufacturing process. The resistance value R of the high-precision chip thermistor is as follows: r is more than or equal to 5 and less than 2MΩ. As shown in fig. 1, the high-precision chip thermistor includes a substrate 1, a pair of back electrodes 2, a first positive electrode layer 3, a first resistive layer 4, a second resistive layer 5, a second positive electrode layer 6, a first protective layer 7, a second protective layer 8, a side electrode 10, and a third positive electrode layer 9. The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, and various modifications and variations may be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for manufacturing a high-precision chip thermistor is characterized in that: the method comprises the steps of,
s1: printing electrode materials on the lower surface of a substrate to form a plurality of back electrodes which are spaced and not connected with each other, wherein the substrate is provided with a plurality of grain folding units, and the back electrodes are respectively arranged on two opposite sides of the lower surface of each grain folding unit at intervals;
s2: printing electrode materials on the upper surface of the substrate, and then sintering to form a first positive electrode layer, wherein the first positive electrode layer comprises a left electrode and a right electrode which are arranged on two opposite sides at intervals on each grain folding unit;
s3: printing a resistive material in the middle of the first positive electrode layer, and then sintering to form a first resistive layer, wherein one end of the first resistive layer extends to partially cover the upper surface of the left electrode, and the other end of the first resistive layer extends to partially cover the upper surface of the right electrode, and separates the left electrode from the right electrode;
s4: printing a resistance material on the first resistance layer again, and then sintering to form a second resistance layer, wherein the second resistance layer covers the upper surface of the first resistance layer;
s5: printing electrode materials on the second resistance layer, and then sintering to form a second positive electrode layer, wherein the second positive electrode layer partially covers the second resistance layer and is not overlapped with the first positive electrode layer;
s6: printing an insulating material on the second positive electrode layer, and then sintering to form a first protective layer, wherein the first protective layer completely covers and is sintered on the second resistance layer, and two ends of the first protective layer respectively extend to cover the left electrode and the right electrode;
s7: carrying out laser resistance trimming treatment on the product obtained in the step S6, and stopping after the product reaches a set resistance value;
s8: printing an insulating material on the first protective layer, and then sintering to form a second protective layer, wherein the second protective layer completely covers and is sintered on the first protective layer;
s9: carrying out heat treatment on the product obtained in the step S8;
s10: printing electrode materials on the upper surface of the first positive electrode layer which is not covered by the first resistance layer in the step S3, and then sintering to form a third positive electrode layer;
s11: performing a first separation operation on the product obtained by sintering in the step S10 to obtain a plurality of strip-shaped semi-finished products, and performing vacuum sputtering on the side surfaces of the strip-shaped semi-finished products to form side surface electrodes, wherein the side surface electrodes extend towards two ends to connect the first positive electrode layer, the third positive electrode layer and the back electrode;
s12: and (3) performing a second separation operation on the product obtained in the step (S11) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to one grain folding unit, and performing electroplating treatment on the granular semi-finished product to obtain the high-precision chip thermistor.
2. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: in step S7, the laser trimming includes:
s701: measuring the resistance value of the product obtained in the step S6;
s702: the measured resistance value is transmitted to a matrix database for comparison and calculation to obtain a difference resistance value;
s703: and eliminating the difference resistance through laser trimming, and returning to the step S701 until the measured resistance is equal to the set resistance in the matrix database, and stopping returning to the step S701.
3. The method of manufacturing a high-precision chip thermistor according to claim 2, characterized in that: in step S701, the product is placed in an oil tank to keep constant temperature, the resistance of the product is measured by an electric bridge, and after the measurement is completed, the product is cleaned and air-dried by ultrasonic cleaning.
4. A method of manufacturing a high-precision chip thermistor according to any one of claims 1 to 3, characterized in that: in step S7, the laser trimming light source is a cold light source or a semi-cold light source.
5. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: in step S12, the side electrode is covered with a nickel layer and a tin layer in this order by electroplating, and the defective high-precision chip thermistor is removed by magnetizing.
6. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: in step S6, the sintering temperature is 600-700 degrees.
7. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: in the step S9, the sintered product in the step S8 is placed for 4H-12H at normal temperature, and then sintered at 220-280 ℃.
8. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: the third positive electrode layer is filled between the side electrode and the first protective layer.
9. The method of manufacturing a high-precision chip thermistor according to claim 1, characterized in that: step S13 is also included after step S12,
step S13: and detecting the high-precision chip thermistor by controlling the environmental temperature to be in the range of 24-26 degrees, packaging the high-precision chip thermistor in a braiding belt after the high-precision chip thermistor is detected to be qualified, and taking the braiding belt into a reel.
10. A high precision chip thermistor, characterized in that: the manufacturing method according to any one of claims 1 to 9, wherein the high-precision chip thermistor has a resistance value R of: r is more than or equal to 5 and less than or equal to 2MΩ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311412085.XA CN117352245A (en) | 2023-10-27 | 2023-10-27 | High-precision chip thermistor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311412085.XA CN117352245A (en) | 2023-10-27 | 2023-10-27 | High-precision chip thermistor and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN117352245A true CN117352245A (en) | 2024-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311412085.XA Pending CN117352245A (en) | 2023-10-27 | 2023-10-27 | High-precision chip thermistor and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN117352245A (en) |
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