CN117334764B - 光信号响应发电片 - Google Patents

光信号响应发电片 Download PDF

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CN117334764B
CN117334764B CN202311196538.XA CN202311196538A CN117334764B CN 117334764 B CN117334764 B CN 117334764B CN 202311196538 A CN202311196538 A CN 202311196538A CN 117334764 B CN117334764 B CN 117334764B
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CN117334764A (zh
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徐炳哲
曹晓娜
刘瑞伟
郝斯琪
宣和均
尤富生
金星
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Shenzhen Shen'an Medical Technology Co ltd
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Abstract

本发明涉及一种光信号响应发电片，包括能够透光的封装层以及设置于所述封装层内部的发电组件，所述发电组件包括依次固定的第一薄膜层、第二薄膜层以及第三薄膜层，所述第一薄膜层内嵌合有微纳米线阵列，所述第三薄膜层为导电材料层，所述微纳米线阵列能够接受光信号以形成电位差；通过微纳米线阵列识别近红外信号，实现信号转换，将外部的近红外光信号转换为设备内电信号输出，产生的电信号可以实现对特定脑部肿瘤的治疗，微纳米线阵列具有超高的光暗电流比、高响应速度和优异的稳定性，能够满足植入式贴片电极的无线能量传输需求。

Description

光信号响应发电片
技术领域
本发明涉及癌症治疗设备相关技术领域，特别是涉及一种光信号响应发电片。
背景技术
脑部肿瘤是多种癌症中最恶性的癌症之一，患者5年内的生存率仅为36％。因为大脑复杂的生理结构和丰富的生理学功能，传统的脑癌治疗方法不仅在治疗过程中遇到许多障碍，而且多数患者预后不佳，复发率高。
传统的手术切除、化疗、放疗和免疫治疗等脑部肿瘤的治疗方案存在复发率高、对患者损伤较大、治疗方案设计困难以及生存周期短等问题。
近年来，除了传统的治疗技术，肿瘤电场治疗(TTFields)被认为是治疗脑肿瘤的一种新型有效的策略，它将低强度、中频的交流电场作用于增殖癌细胞的微管蛋白，干扰肿瘤细胞有丝***，从而使癌细胞凋亡并抑制肿瘤生长。且相比较其他传统的放射、化疗、免疫治疗等方法，它具有对癌细胞的高度特异性、对生物体组织毒副作用小的优点。
但是，目前的电场治疗技术主要是植入电极治疗或在患者的头皮上放置贴片电极来治疗，通常带有从设备延伸到刺激目标的导线，需要一直携带外部电池、布线困难，频繁地剃头和更换电池给患者造成了生理和心理负担，限制了其应用范围和对象。
发明内容
基于此，有必要针对目前的电场治疗技术需要携带外部电池且带有导线，频繁地剃头和更换电池会对患者造成了生理、心理负担的问题，提供一种无需频繁剃头或更换电池，对患者负担较小的光信号响应发电片。
本申请提供一种光信号响应发电片，包括能够透光的封装层以及设置于所述封装层内部的发电组件，所述发电组件包括依次固定的第一薄膜层、第二薄膜层以及第三薄膜层，所述第一薄膜层内嵌合有微纳米线阵列，所述第三薄膜层为导电材料层，所述微纳米线阵列能够接受光信号以形成电位差。
在其中一个实施例中，所述微纳米线阵列包括第一微纳米线层以及第二微纳米线层，两者形成异质结。
在其中一个实施例中，所述第一微纳米线层为碲微纳米线层，所述第二微纳米线层为碲硒微纳米线层。
在其中一个实施例中，所述碲硒微纳米线层中碲元素与硒元素的原子序数比为:。
在其中一个实施例中，所述第三薄膜层为旋涂于所述第二薄膜层远离所述第一薄膜层一侧的银微纳米线层。
在其中一个实施例中，所述第一薄膜层的材料均为碳纤维纺织材料、高分子聚合物材料、聚二甲基硅氧烷、涤纶树脂、热塑性聚氨酯弹性体、软质聚氯乙烯或双向拉伸聚丙烯中的一种或多种。
在其中一个实施例中，所述第二薄膜层的材料为聚甲基丙烯酸甲酯、聚碳酸酯、涤纶树脂、聚砜、聚氯乙烯或聚二甲基硅氧烷中的一种或多种。
在其中一个实施例中，所述第三薄膜层为金、铂、铜或铝中的一者或多种溅射至所述第二薄膜层形成，或将金属箔片、金属纤维或导电橡胶薄膜中的一者或多者紧密贴附于所述第二薄膜层形成。
在其中一个实施例中，所述封装层的材料为高分子聚合物材料，所述封装层通过固定模具倒模或旋涂制备。
在其中一个实施例中，所述第二薄膜层将所述第一薄膜层以及所述第三薄膜层完全阻隔。
上述光信号响应发电片，通过微纳米线阵列识别近红外信号，实现信号转换，将外部的近红外光信号转换为设备内电信号输出，产生的电信号可以实现对特定脑部肿瘤的治疗，微纳米线阵列具有超高的光暗电流比、高响应速度和优异的稳定性，能够满足植入式贴片电极的无线能量传输需求。
附图说明
图1为本申请光信号响应发电片的***结构示意图。
附图标记：10、封装层；11、第一封装层；12、第二封装层；20、发电组件；21、第一薄膜层；22、第二薄膜层；23、第三薄膜层。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
目前脑部肿瘤的治疗方案在本质上还是以保守治疗手段为主，包括手术切除、化疗、放疗和免疫治疗等方法，但放疗和化疗等外科手术可能会导致严重的神经功能损伤，还需要克服血脑屏障对药物递送的阻碍性、肿瘤微环境的复杂性、肿瘤组织的异质性以及药物的耐受性等困难。由于高复发率和缺乏有效的治疗方案，尤其是大多数诊断为胶质母细胞瘤的患者即使在接受传统疗法的治疗后，其5年内的生存率仍<10％。而且，肿瘤的类型、大小和位置以及患者的年龄、病史、总体健康状况、症状类型和可能观察到的副作用等参数在治疗过程中都要全方位、多角度的考虑到，这给治疗方案的设计增添了许多困难。
目前已有多项研究和设备应用TTFields对肿瘤进行治疗，但现有的治疗技术主要是植入电极治疗和在患者的头皮上放置贴片电极来治疗，贴片电极长时间贴在头皮肤上会引起轻中度皮炎，患者必须每3～4天剃一次头，加重了患者在治疗过程中的生理不适和心理负担；其次，当前电场治疗技术采用的贴片电极无法近距离靠近肿瘤细胞位置，治疗效果低下，治疗精准度不够，且需要经过长导线连接至外部电池，需要一直携带的外部电池，限制了其应用范围和对象。
采取无线植入式的医疗设备可以一定程度缓解上述问题，但是而目前无线能量传输的方式主要有近场电感耦合、远场射频电磁波、中场电感耦合、光和超声等，主要是通过外部驱动植入的生物电子接收器感应出电压和电流，大多受到设备尺寸、接收距离和生物体组织的复杂性等的影响，而导致传输功率低下、功耗大、治疗效果不佳。
请参考图1所示，本申请首先提供一种光信号响应发电片，包括能够透光的封装层10以及设置于封装层10内部的发电组件20，发电组件20包括依次固定的第一薄膜层21、第二薄膜层22以及第三薄膜层23，第一薄膜层21内嵌合有微纳米线阵列，第三薄膜层23为导电材料层，微纳米线阵列能够接受光信号以形成电位差。
本申请中，通过微纳米线阵列识别近红外信号，实现信号转换，将外部的近红外光信号转换为设备内电信号输出，产生的电信号可以实现对特定脑部肿瘤的治疗，微纳米线阵列具有超高的光暗电流比、高响应速度和优异的稳定性，能够满足植入式贴片电极的无线能量传输需求。
这里的第一薄膜层21内嵌合有微纳米线阵列，指在第一薄膜层21上直接生长微纳米线阵列，以第一薄膜层21为碳纤维纺织材料(CFF)为例，微观层面下碳纤维呈网状结构，微纳米线阵列由网状结构内垂直生长形成，因此，光线能够在通过封装层10照射至第一薄膜层21。
在一些实施例中，微纳米线阵列包括第一微纳米线层以及第二微纳米线层，两者形成异质结。
以Te NWs(碲纳米线阵列)为例，在原始Te NWs中，光生载流子在漫长的迁移过程中容易相互结合，难以形成明显的电信号输出，而本申请中，通过第一微纳米线层以及第二微纳米线层构建形成异质结，能够避免了空穴和电子在同一介质中的迁移，降低复合概率，延长了微纳米线阵列的载流子寿命。
在一些实施例中，第一微纳米线层为碲微纳米线层(碲纳米线阵列)，第二微纳米线层为碲硒微纳米线层(碲硒合金纳米线阵列)。
Se(硒)是Te(碲)的同源和相邻元素，具有相同的外部电子结构和相似的化学和物理性质，当Te和Se形成合金时，TeSe(碲硒合金)的晶格结构与Te晶体相似，可以看作是Se取代了Te NWs中的原子。
采用同样的沉积方法，将TeSe NWs(碲硒合金纳米线阵列)覆盖在Te NWs阵列上，异质结的构建可以有效调控Te NWs以及TeSe NWs(Te@TeSe NWs)之间的载流子传输。总之，在从Te NWs到TeSe NWs方向的界面处形成了内部电场，并形成了II型异质结，当Te@TeSeNW被近红外光照亮时，耗尽区的光生载流子受到内部电场的影响，光生电子转移到Te NWs上，而光生空穴转移到TeSe NWs上，降低了载流子之间复合的概率，延长了载流子寿命，从载流子迁移过程来看，Te@TeSe NWs表面的Te NWs形成空穴传输层，核心中的Te NWs形成电子传输层。
与纯Te NWs相比，避免了空穴和电子在同一介质中的迁移，降低了复合概率，延长了Te@TeSe NWs的载流子寿命，以使得设备在周期光照下具有更高的响应度和光导增益的机制，具有稳定、响应时间短、自供电的特点。
具体的，在实验中，没有照明的情况下，异质结构依靠电子空穴的热运动达到热平衡状态，价带和导带也处于平衡状态。
当Te@TeSe NWs被照亮时，耗尽区的光生载流子受到内部电场的影响，光生电子转移到Te NWs上，而光生空穴转移到TeSe NWs上。因此，电子积聚在Te NWs，空穴积聚在TeSeNWs中，导致Te@TeSe NW两侧之间的电荷分布差异，形成电位差；由于异质结构中新的电子空穴对，电子和空穴向相反侧迁移，产生非平衡载流子积累。
由此可知，电位是由空间电荷分布的差异形成的，当外部电路连接形成回路时，微纳米线阵列根据光提供相应的电位输出，以完成光信号到电信号的转换；其中，光信号的来源可以变化，包括红外辐射、特殊通信光波或线性激光器等；产生的电信号可以通过结构设计和微纳米线阵列的控制，进而调谐设备产生特定的电压和电流，以实现对脑部肿瘤的治疗。
当然，第一微纳米线层以及第二微纳米线层也可为其他元素，只要能够形成异质结，避免了空穴和电子在同一介质中的迁移即可，本申请在此不做进一步的限定。
在一些实施例中，碲硒微纳米线层中碲元素与硒元素的原子序数比为1:1。
可以理解的，当Te和Se形成原子序数比为1：1的合金时，合金的晶格结构与Te晶体相似，可以看作是Se取代了Te NWs中一半的原子；因此，序数比为1:1是最佳选择，如果序数比为1:2、1:3或其他比例，则认为合金中序数少的金属顶替了另一种金属的少部分原子，只能得到很小的改善，光生载流子在漫长的迁移过程中依然容易相互结合，难以形成更加明显的电信号输出和更高的电压，从而无法达到最佳效果。
在一些实施例中，第一薄膜层21的材料为碳纤维纺织材料、高分子聚合物材料、聚二甲基硅氧烷、涤纶树脂、热塑性聚氨酯弹性体、软质聚氯乙烯或双向拉伸聚丙烯中的一种或多种。
优选的，第一薄膜层21的材料为碳纤维纺织材料，并通过超声波清洗除去小颗粒有机杂质，纤维纺织材料的柔韧性和耐腐蚀性能较好，保证了设备的持久性和柔软性，可以更好地贴合皮肤组织或生物体组织。
除此以外，只要满足柔软超薄、具有良好生物相容性的特点，不同的材料和方法均可用于制作第一薄膜层21，例如，可利用高分子聚合物材料(PDMS)制作特定厚度的薄膜，不仅柔软性好还能满足控制厚度的需求，采用PET(聚二甲基硅氧烷)、TPU(涤纶树脂)、TPE(热塑性聚氨酯弹性体)、软质PVC(软质聚氯乙烯)或BOPP(双向拉伸聚丙烯)等聚合物材料制作第一薄膜层21，在原有性能的基础上增添耐磨耐热、尺寸稳定性好等良好的机械性能。
在一些实施例中，第二薄膜层22的材料为聚甲基丙烯酸甲酯、聚碳酸酯、涤纶树脂、聚砜、聚氯乙烯或聚二甲基硅氧烷中的一种或多种。
优选的，第二薄膜层22的材料为PMMA(聚甲基丙烯酸甲酯)，PMMA透光性强，强度较高，耐用性强，在此处的作用为隔离第一薄膜层21以及第三薄膜层23，并保护微纳米线阵列，如果失去PMMA的保护，会导致设备短路，无法输出信号电压，碳纤维部分容易因机械磨损而快速损耗。
除此以外，能够隔绝第一薄膜层21以及第三薄膜层23又具有一定韧性的材料都可作为第二薄膜层22的替换选择，例如PC(聚碳酸酯)、PET(涤纶树脂)、PSU(聚砜)、PVC(聚氯乙烯)或一定厚度的PDMS(聚二甲基硅氧烷)薄膜等。
在一些实施例中，第二薄膜层22将第一薄膜层21以及第三薄膜层23完全阻隔；虽然第二薄膜层22完全阻隔对电场形成会起到一定阻挡作用，但经过实验验证，若第二薄膜层22存在镂空，会造成第一薄膜层21与第三薄膜层23之间的断路，从而导致无法输出信号电压，因此，为确保光信号响应发电片正常工作，第二薄膜层22需要将第一薄膜层21以及第三薄膜层23完全阻隔。
在一些实施例中，第三薄膜层23为旋涂于第二薄膜层22远离第一薄膜层21一侧的银微纳米线层。
此外，第三薄膜层23也可以为金、铂、铜或铝中的一者或多种溅射至第二薄膜层22形成，或将金属箔片、金属纤维或导电橡胶薄膜中的一者或多者紧密贴附于第二薄膜层22形成。
在一些实施例中，封装层10的材料为高分子聚合物材料，封装层10通过固定模具倒模或旋涂制备。
光信号响应发电片植入人体后，封装层10与人体组织直接接触，高分子聚合物材料的生物相容性较强，对人体组织的刺激较小，能够减少植入发电片对患者的影响；此外，高分子聚合物材料柔软可弯曲，能够与植入部位的人体组织较好的贴合，同样能够减少对人体组织的刺激。
而通过固定模具倒模和旋涂的方式制备封装层10，一方面能够保证封装层10的相对较小，减少发电片对人体组织的影响，另一方面能够使得批量制得的封装层10大小、厚度以及形状均相同，从而增加发电片的一致性，便于医生进行手术植入。
其中，旋涂方式能够有效控制材料膜的厚度，尽可能减少有机材料膜的厚度，从而减小光信号响应发电片整体厚度，降低发电片植入人体后对人体的影响，增加生物相容性。
在一些实施例中，封装层10包括第一封装层11以及第二封装层12，两者紧密固定有效隔离发电组件20以及人体生物组织。
在一些实施例中，光信号响应发电片的面积小于等于2.25cm2，厚度小于等于0.5cm；通过控制光信号响应发电片的体积，一方面能够尽可能减少发电片植入人体时对人体的影响，另一方面使得发电片能够通过微创手术植入，减少患者的手术负担。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (9)

1.一种光信号响应发电片，其特征在于，包括能够透光的封装层(10)以及设置于所述封装层(10)内部的发电组件(20)，所述发电组件(20)包括依次固定的第一薄膜层(21)、第二薄膜层(22)以及第三薄膜层(23)，所述第一薄膜层(21)内嵌合有微纳米线阵列，所述第三薄膜层(23)为导电材料层，所述微纳米线阵列能够接受光信号以形成电位差；
所述第二薄膜层(22)将所述第一薄膜层(21)以及所述第三薄膜层(23)完全阻隔。
2.根据权利要求1所述的光信号响应发电片，其特征在于，所述微纳米线阵列包括第一微纳米线层以及第二微纳米线层，两者形成异质结。
3.根据权利要求2所述的光信号响应发电片，其特征在于，所述第一微纳米线层为碲微纳米线层，所述第二微纳米线层为碲硒微纳米线层。
4.根据权利要求3所述的光信号响应发电片，其特征在于，所述碲硒微纳米线层中碲元素与硒元素的原子序数比为1:1。
5.根据权利要求2所述的光信号响应发电片，其特征在于，所述第三薄膜层(23)为旋涂于所述第二薄膜层(22)远离所述第一薄膜层(21)一侧的银微纳米线层。
6.根据权利要求1所述的光信号响应发电片，其特征在于，所述第一薄膜层(21)的材料为碳纤维纺织材料、高分子聚合物材料、聚二甲基硅氧烷、涤纶树脂、热塑性聚氨酯弹性体、软质聚氯乙烯或双向拉伸聚丙烯中的一种或多种。
7.根据权利要求1所述的光信号响应发电片，其特征在于，所述第二薄膜层(22)的材料为聚甲基丙烯酸甲酯、聚碳酸酯、涤纶树脂、聚砜、聚氯乙烯或聚二甲基硅氧烷中的一种或多种。
8.根据权利要求1所述的光信号响应发电片，其特征在于，所述第三薄膜层(23)为金、铂、铜或铝中的一者或多种溅射至所述第二薄膜层(22)形成，或将金属箔片、金属纤维或导电橡胶薄膜中的一者或多者紧密贴附于所述第二薄膜层(22)形成。
9.根据权利要求1所述的光信号响应发电片，其特征在于，所述封装层(10)的材料为高分子聚合物材料，所述封装层(10)通过固定模具倒模或旋涂制备。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646788A (zh) * 2012-04-19 2012-08-22 纳米新能源（唐山）有限责任公司 纳米发电机及其制造方法
CN102683573A (zh) * 2012-05-09 2012-09-19 纳米新能源（唐山）有限责任公司 纳米发电机、纳米发电机组及其自供电***

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6454698B1 (en) * 1999-08-12 2002-09-24 Obtech Medical Ag Anal incontinence treatment with energy transfer device
CN103986364B (zh) * 2014-05-04 2016-08-17 北京纳米能源与***研究所 一种植入式发电机
CN105720127A (zh) * 2016-02-05 2016-06-29 浙江大学 基于石墨烯/半导体异质结的多功能发电机及其制造方法
CN109916516A (zh) * 2019-03-29 2019-06-21 郑州大学 一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用
CN115227977B (zh) * 2022-07-21 2024-01-26 佛山科学技术学院 一种肿瘤电脉冲化学治疗***
CN115347119A (zh) * 2022-08-15 2022-11-15 安徽农业大学 一种多模态自供电可穿戴水分感知器件及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646788A (zh) * 2012-04-19 2012-08-22 纳米新能源（唐山）有限责任公司 纳米发电机及其制造方法
CN102683573A (zh) * 2012-05-09 2012-09-19 纳米新能源（唐山）有限责任公司 纳米发电机、纳米发电机组及其自供电***

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