CN117332623B - Dynamic performance adjusting method and system of MEMS high-g-value accelerometer - Google Patents

Dynamic performance adjusting method and system of MEMS high-g-value accelerometer Download PDF

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CN117332623B
CN117332623B CN202311632983.6A CN202311632983A CN117332623B CN 117332623 B CN117332623 B CN 117332623B CN 202311632983 A CN202311632983 A CN 202311632983A CN 117332623 B CN117332623 B CN 117332623B
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value
dynamic performance
etching
accelerometer
cover plate
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CN117332623A (en
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宫美梅
仇旭萍
张裕华
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Suzhou Eboda Microsystem Technology Co ltd
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Abstract

The invention provides a dynamic performance adjusting method and a system of an MEMS high-g-value accelerometer, which relate to the technical field of acceleration sensor design, and the method comprises the steps of establishing an MEMS high-g-value accelerometer model; calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance; judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, selecting a corresponding improvement strategy according to the surface area of the mass block and whether to allow the accelerometer to change other performances except the dynamic performance; according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer. The method realizes dynamic performance adjustment on the premise of not changing the geometric parameters of the accelerometer, is simple and effective, and is suitable for accelerometers with different structures, different sizes and different requirements.

Description

Dynamic performance adjusting method and system of MEMS high-g-value accelerometer
Technical Field
The invention relates to the technical field of acceleration sensor design, in particular to a dynamic performance adjusting method and system of an MEMS high g value accelerometer.
Background
The MEMS high g value accelerometer has simple structure, small volume and low process difficulty, and can be used in the fields of automobile collision, missile launching and the like. The main parts of the accelerometer structure comprise beams and islands, a common off-plane high g-value accelerometer adopts a multi-beam-island structure shown in figure 1, wherein a structural frame, a mass block and the beams form the accelerometer structure, the layer where the accelerometer structure is located is called a structural layer, and a bottom cover plate is used for protecting the accelerometer structure. H in FIG. 1 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Representing the spacing of the beam from the floor slab.
In order to be able to accurately reflect the input signal, high g-value accelerometers need to have good dynamic performance. There are two methods for improving dynamic performance, one is to increase the natural frequency of the structure (known as solidWith frequency method) and secondly, proper damping (called damping method) is designed. Changing the dimensions of the beams and masses to increase the natural frequency is a common approach, but is not applicable to low frequency structures where some geometric parameters are fixed; the damping method does not need to change the geometric dimension of the accelerometer structural layer, but only needs to pass through h 1 、h 2 Is realized by changing the (1) but in actual design h 1 、h 2 And are difficult to change. Taking a multi-beam-island accelerometer with a structural frame thickness of 400 μm as an example, if good dynamic performance is to be achieved, h 1 Should be below 10 μm, h for a mass with a smaller surface area 2 Should also be smaller at the same time; in fact, in order to ensure the performances of overload resistance, sensitivity, cross-axis interference resistance and the like, h 1 Typically above 50 μm, h 2 Then reach 300 μm or more and once the geometric parameters of the structural layer are determined, h 1 、h 2 Cannot be varied. If h is implemented by means of a thinned structural frame 1 、h 2 The reduction of the number of the structural frames causes fragments due to the excessively thin structural frames, increases the process cost and affects the yield.
Disclosure of Invention
Therefore, the invention aims to provide a simple method and a system for adjusting the dynamic performance of the accelerometer, which are applicable to different structures, different sizes and different requirements, on the premise of not changing the geometric parameters of the accelerometer structure.
In order to solve the above problems, an embodiment of the present invention provides a method for adjusting dynamic performance of a MEMS high g-value accelerometer, the method comprising:
s1: establishing a MEMS high-g-value accelerometer model, wherein the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
s2: calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance;
s3: judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, selecting a corresponding improvement strategy according to the surface area of the mass block and whether to allow the accelerometer to change other performances except the dynamic performance, wherein the improvement strategy specifically comprises:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam;
s4: according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
Preferably, the square mass blocks adopted by the MEMS high-g-value accelerometer model are connected through four beams, so that the MEMS high-g-value accelerometer model has good stability, and two ends of each beam are connected with the structural frame and the mass blocks.
Preferably, the distance h between the mass block and the bottom cover plate 1 The adjusting method of (2) is as follows:
etching the bottom cover plate, and adjusting the distance h between the mass block and the bottom cover plate by etching different etching depths of the bottom cover plate 1 。
Preferably, the distance h between the beam and the bottom cover plate 2 The adjusting method of (2) is as follows:
etching the bottom cover plate, and adjusting the distance h between the beam and the bottom cover plate by etching different etching depths of the bottom cover plate 2 。
Preferably, the method for adjusting the mass of the mass block comprises the following steps:
etching the mass block, and adjusting the etching depth h of the mass block by etching different etching depths of the mass block 3 。
Preferably, the corresponding improvement strategy is selected according to the surface area of the mass and whether to allow the accelerometer to change other performance besides dynamic performance, and different h is set according to the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for completing the preparation of the MEMS high g value accelerometer comprises the following steps:
when the surface area of the mass is large and other performance changes besides dynamic performance are not allowed, calculating h by adopting strategy 1 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Fifth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
Preferably, the corresponding improvement strategy is selected according to the surface area of the mass and whether to allow the accelerometer to change other performance besides dynamic performance, and different h is set according to the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
when the surface area of the mass is small and other performance changes besides dynamic performance are not allowed, calculating to obtain h by adopting strategy 2 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 0 +h 1 -h 2 ；
Fifth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Sixth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
Preferably, the accelerometer is allowed to deactivate based on the mass surface area size and whether or notSelecting corresponding improvement strategies according to other performance changes besides the state performance, and setting different h according to the improvement strategies 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
when the surface area of the mass is large and the sensitivity of the part is allowed to be sacrificed to improve the linearity and overload resistance, h is calculated by adopting a strategy 3 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Sixth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Seventh step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
Preferably, the corresponding improvement strategy is selected according to the surface area of the mass and whether to allow the accelerometer to change other performance besides dynamic performance, and different h is set according to the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
where the mass has a smaller surface area and allows for sacrificing part sensitivity to improve linearity and overload resistanceWhen force is applied, calculating to obtain h by adopting strategy 4 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the first bottom cover plate to form a groove, wherein the etching depth is h 0 -h 2 -h 3 +h 1 ；
Sixth step: photoetching and etching the second bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Seventh step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Eighth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
The embodiment of the invention also provides a dynamic performance adjusting system of the MEMS high-g-value accelerometer, which is used for realizing the dynamic performance adjusting method of the MEMS high-g-value accelerometer, and comprises the following steps:
the model building module is used for building a MEMS high-g-value accelerometer model, and the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
the dynamic performance calculation module is used for calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance;
the strategy construction module is used for judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, a corresponding improvement strategy is selected according to the surface area of the mass block and whether to allow the performance of the accelerometer except the dynamic performance to change, and the improvement strategy specifically comprises:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing under beam Fang TutaiIs of a height of (2);
the preparation module is used for obtaining h by utilizing a dynamic performance feedback formula according to an improvement strategy and actual dynamic performance requirements 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
From the above technical scheme, the invention has the following advantages:
the embodiment of the invention provides a dynamic performance adjusting method and a system of an MEMS high-g-value accelerometer, wherein the dynamic performance is reflected by firstly establishing an MEMS high-g-value accelerometer model and then calculating the damping ratio of the MEMS high-g-value accelerometer model, and then judging whether the dynamic performance meets the requirement or not; finally, according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer. The method realizes dynamic performance adjustment on the premise of not changing the geometric dimension of the accelerometer structure, is simple and effective, and is suitable for accelerometers with different structures, different dimensions and different requirements. In addition, the invention can also improve the reliability, linearity and cross-axis interference resistance of the accelerometer structure.
Drawings
For a clearer description of embodiments of the invention or of solutions in the prior art, reference will be made to the accompanying drawings, which are intended to be used in the examples, for a clearer understanding of the characteristics and advantages of the invention, by way of illustration and not to be interpreted as limiting the invention in any way, and from which, without any inventive effort, a person skilled in the art can obtain other figures. Wherein:
fig. 1 is a schematic structural diagram of a conventional off-plane high g-value accelerometer, in which (a) in fig. 1 is a front view and (b) in fig. 1 is a top view;
FIG. 2 is a flow chart of a method of dynamic performance adjustment of a MEMS high g-value accelerometer according to one embodiment;
FIG. 3 is the graph of time h in the embodiment 3 =0, h 4 When=0, the MEMS high g-value accelerometer is structurally schematic;
FIG. 4 is the graph of time h in the embodiment 3 =0，h 4 At > 0, the MEMS high g value accelerometer is structurally schematic;
FIG. 5 shows the case when 0 < h in the embodiment 3 ＜h 0 ，h 4 When=0, the MEMS high g-value accelerometer is structurally schematic;
FIG. 6 is a graph of the embodiment when 0 < h 3 ＜h 0 ，h 4 At > 0, the MEMS high g value accelerometer is structurally schematic;
FIG. 7 is a flow chart of the preparation of a MEMS high g-value accelerometer in an embodiment when the surface area of the mass is large and no other performance changes than dynamic performance are allowed;
FIG. 8 is a flow chart of the preparation of a MEMS high g-value accelerometer in an embodiment when the surface area of the mass is small and no other performance changes than dynamic performance are allowed;
FIG. 9 is a flow chart of the fabrication of a MEMS high g-value accelerometer in an embodiment where the mass surface area is large and allows for sacrificing part sensitivity to improve linearity and overload resistance;
FIG. 10 is a flow chart of the fabrication of a MEMS high g-value accelerometer in an embodiment where the mass surface area is small and allows for sacrificing part sensitivity to improve linearity and overload resistance;
FIG. 11 is a block diagram of a dynamic performance tuning system for a MEMS high g-value accelerometer, according to one embodiment provided.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 2, an embodiment of the present invention provides a method for adjusting dynamic performance of a MEMS high g-value accelerometer, where the method includes:
s1: establishing a MEMS high-g-value accelerometer model, wherein the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
s2: calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance;
s3: judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, selecting a corresponding improvement strategy according to the surface area of the mass block and whether to allow the accelerometer to change other performances except the dynamic performance, wherein the improvement strategy specifically comprises:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: the natural frequency method is adopted simultaneously when the surface area of the mass block is smaller and the sensitivity of the part is allowed to be sacrificed to improve the linearity and overload resistanceAnd the damping method is used for improving the MEMS high g value accelerometer model, wherein h is more than 0 and less than h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam;
s4: according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
From the technical scheme, the embodiment of the invention provides a dynamic performance adjusting method of an MEMS high-g-value accelerometer, which comprises the steps of firstly establishing an MEMS high-g-value accelerometer model, then calculating the damping ratio of the MEMS high-g-value accelerometer model to reflect dynamic performance, and then judging whether the dynamic performance meets the requirement; finally, according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer. The method realizes dynamic performance adjustment on the premise of not changing the geometric dimension of the accelerometer structure, is simple and effective, and is suitable for accelerometers with different structures, different dimensions and different requirements. In addition, the invention can also improve the reliability, linearity and cross-axis interference resistance of the accelerometer structure.
In the embodiment, in step S1, a MEMS high g-value accelerometer model is established, where the MEMS high g-value accelerometer includes a mass block, a beam, a structural frame, and a bottom cover plate. Specifically, the square mass block adopted by the MEMS high-g-value accelerometer model is connected through four beams, so that the MEMS high-g-value accelerometer model has good stability, and the two ends of the beams are connected with the structural frame and the mass block.
In this embodiment, in step S2, the damping ratio of the MEMS high g-value accelerometer model is calculated to reflect the dynamic performance, wherein the dynamic performance is reflected by the damping ratio, the calculation of the damping ratio and the natural frequency, damping, i.e. h 1 ~h 4 Related to the value of (2).
In this embodiment, in step S3, it is determined whether the dynamic performance meets the requirement, if so, the model does not need to be modified, and if not, a corresponding modification strategy is selected according to the surface area of the mass and whether to allow the accelerometer to change other performances except the dynamic performance, where the modification strategy specifically includes:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 As shown in fig. 3, the distance h between the mass block and the bottom cover plate is reduced 1 Dynamic performance adjustment is achieved. Etching the bottom cover plate, and adjusting the distance h between the mass block and the bottom cover plate by etching different etching depths of the bottom cover plate 1 。
Strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0, as shown in FIG. 4, by decreasing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is achieved. And h is 1 、h 2 Can be adjusted by different etching depths of the bottom cover plate, and has a larger adjusting range.
Strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0, as shown in fig. 5,by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is achieved. And h is 1 、h 3 Can be adjusted by different bottom cover plate etching depths and mass block etching depths, and has a larger adjusting range.
Strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0, as shown in FIG. 6, by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is achieved. And h is 1 、h 2 、h 3 Can be adjusted by different bottom cover plate etching depths and mass block etching depths, and has a larger adjusting range.
When the MEMS high-g-value accelerometer model is improved, a lug boss is manufactured on the bottom cover plate by utilizing an etching process, so that the lug boss is positioned under the beam and the mass block and even embedded into the mass block, and the lug boss is manufactured on the bottom cover plate by utilizing the etching process, so that the lug boss is positioned under the beam and the mass block and even embedded into the mass block. The boss not only can improve dynamic performance, but also can play the overload protection's effect. When the accelerometer is impacted by too high acceleration or collides with a hard object, the boss can inhibit excessive displacement of the mass block, so that structural failure is avoided, and structural reliability is improved. By h 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam.
From the above, the dynamic performance tuning strategy for MEMS high g-value accelerometers is shown in table 1 below.
TABLE 1
In the embodiment, in step S4, h is obtained by using a dynamic performance feedback formula according to the improvement strategy and the actual dynamic performance requirement 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
The dynamic performance adjustment strategy can be used for accelerometers with various detection principles, such as piezoresistive type, grating type and the like, and the manufacturing processes of detection parts of the piezoresistive type, the grating type and the like are slightly different, so that the following implementation scheme only comprises the preparation process of the beam, the mass block and the bottom cover plate, and does not comprise the preparation of the detection parts.
Specifically, when the surface area of the mass is large and no other performance changes than dynamic performance are allowed, h is calculated using strategy 1 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined values, as shown in FIG. 7, and specifically comprises the following steps:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Fifth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
When the surface area of the mass is small and other performance changes besides dynamic performance are not allowed, calculating to obtain h by adopting strategy 2 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined values, as shown in FIG. 8, and specifically comprises the following steps:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching structural layerThe back forms a mass block, and the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 0 +h 1 -h 2 ；
Fifth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Sixth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
When the surface area of the mass is large and the sensitivity of the part is allowed to be sacrificed to improve the linearity and overload resistance, h is calculated by adopting a strategy 3 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined values, as shown in FIG. 9, and specifically comprises the following steps:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Sixth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Seventh step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
When the mass surface area is small and allows for sacrificing part sensitivity to improve linearity and overload resistance, h is calculated using strategy 4 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined values, as shown in FIG. 10, and specifically comprises the following steps:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the first bottom cover plate to form a groove, wherein the etching depth is h 0 -h 2 -h 3 +h 1 ；
Sixth step: photoetching and etching the second bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Seventh step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Eighth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
Example two
As shown in fig. 11, the present invention provides a dynamic performance adjustment system of a MEMS high g-value accelerometer, for implementing the dynamic performance adjustment method of a MEMS high g-value accelerometer according to the first embodiment, the system includes:
the model building module 10 is used for building a MEMS high-g-value accelerometer model, wherein the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
a dynamic performance calculation module 20 for calculating a damping ratio of the MEMS high g-value accelerometer model to reflect dynamic performance;
the policy building module 30 is configured to determine whether the dynamic performance meets a requirement, if so, the model does not need to be modified, and if not, a corresponding modification policy is selected according to the surface area of the mass and whether to allow the accelerometer to change other performances except the dynamic performance, where the modification policy specifically includes:
strategy 1: when the surface area of the mass is large and not allowed to be in addition to dynamic performanceWhen the performance of the MEMS accelerometer is changed, a damping method is adopted to improve the MEMS high g value accelerometer model, and at the moment, h 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam;
a preparation module 40 for utilizing dynamic performance according to the improvement strategy and actual dynamic performance requirementsThe state performance feedback formula obtains h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
The present embodiment of a dynamic performance adjustment system for a MEMS high-g-value accelerometer is used to implement the foregoing dynamic performance adjustment method for a MEMS high-g-value accelerometer, so that the specific implementation of the dynamic performance adjustment system for a MEMS high-g-value accelerometer can be seen as the example portions of the foregoing dynamic performance adjustment method for a MEMS high-g-value accelerometer, for example, the model building module 10, the dynamic performance calculation module 20, the policy building module 30, and the preparation module 40 are respectively used to implement steps S1, S2, S3, and S4 in the foregoing dynamic performance adjustment method for a MEMS high-g-value accelerometer, so that the specific implementation thereof can refer to the description of the corresponding examples of each portion, and will not be repeated herein for redundancy avoidance.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (10)

1. A method for dynamic performance adjustment of a MEMS high g-value accelerometer, comprising:
s1: establishing a MEMS high-g-value accelerometer model, wherein the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
s2: calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance;
s3: judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, selecting a corresponding improvement strategy according to the surface area of the mass block and whether to allow the accelerometer to change other performances except the dynamic performance, wherein the improvement strategy specifically comprises:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam;
s4: according to the improvement strategy and the actual dynamic performance requirement, utilizing a dynamic performance feedback formula to obtain h 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
2. The method for adjusting the dynamic performance of the MEMS high-g-value accelerometer according to claim 1, wherein square mass blocks adopted by the MEMS high-g-value accelerometer model are connected through four beams, so that the stability is good, and two ends of each beam are connected with a structural frame and the mass blocks.
3. The method for dynamic performance adjustment of a MEMS high g-value accelerometer according to claim 1, wherein the spacing h of the mass from the bottom cover plate 1 The adjusting method of (2) is as follows:
etching the bottom cover plate, and adjusting the distance h between the mass block and the bottom cover plate by etching different etching depths of the bottom cover plate 1 。
4. The method of dynamic performance adjustment of a MEMS high g-value accelerometer of claim 1, wherein the beam to bottom cover plate spacing h 2 The adjusting method of (2) is as follows:
etching the bottom cover plate, and adjusting the distance h between the beam and the bottom cover plate by etching different etching depths of the bottom cover plate 2 。
5. The method for adjusting the dynamic performance of the MEMS high g-value accelerometer according to claim 1, wherein the method for adjusting the mass is as follows:
etching the mass block, and adjusting the etching depth h of the mass block by etching different etching depths of the mass block 3 。
6. MEMS according to claim 1A dynamic performance adjusting method of a high-g-value accelerometer is characterized in that a corresponding improvement strategy is selected according to the surface area of a mass block and whether to allow the performance of the accelerometer except for the dynamic performance to change according to the performance of the accelerometer except for the dynamic performance, and different h are set according to the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for completing the preparation of the MEMS high g value accelerometer comprises the following steps:
when the surface area of the mass is large and other performance changes besides dynamic performance are not allowed, calculating h by adopting strategy 1 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Fifth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
7. The method of dynamic performance adjustment of a MEMS high g-value accelerometer according to claim 1, wherein the corresponding improvement strategy is selected based on the mass surface area size and whether to allow other performance changes of the accelerometer than dynamic performance, and different h is set based on the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
when the surface area of the mass is small and no other performance modification than dynamic performance is allowedWhen the time is changed, calculating to obtain h by adopting a strategy 2 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching the front surface of the structural layer to form a beam;
fourth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 0 +h 1 -h 2 ；
Fifth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Sixth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
8. The method of dynamic performance adjustment of a MEMS high g-value accelerometer according to claim 1, wherein the corresponding improvement strategy is selected based on the mass surface area size and whether to allow other performance changes of the accelerometer than dynamic performance, and different h is set based on the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
when the surface area of the mass is large and the sensitivity of the part is allowed to be sacrificed to improve the linearity and overload resistance, h is calculated by adopting a strategy 3 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
Third stepStep (c) of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Sixth step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 2 -h 0 -h 1 ；
Seventh step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
9. The method of dynamic performance adjustment of a MEMS high g-value accelerometer according to claim 1, wherein the corresponding improvement strategy is selected based on the mass surface area size and whether to allow other performance changes of the accelerometer than dynamic performance, and different h is set based on the improvement strategy 1 ～h 4 And using dynamic performance feedback formula to obtain h 1 ～h 4 The determined value is finally based on h 1 ~h 4 The method for determining the value to complete the preparation of the MEMS high g-value accelerometer further comprises the following steps:
when the mass surface area is small and allows for sacrificing part sensitivity to improve linearity and overload resistance, h is calculated using strategy 4 1 ~h 4 Determining a value according to h 1 ~h 4 The preparation of the MEMS high g value accelerometer is completed by the determined value:
the first step: photoetching and etching the back of the structural layer to form a groove, wherein the etching depth is h 2 +h 4 -h 0 ；
And a second step of: photoetching and etching the back of the structural layer to form a mass block, wherein the etching depth is h 0 ；
And a third step of: photoetching and etching a mass block at the back of the structural layer, forming a groove in the mass block, and etching the structural layer to a depth h 3 ；
Fourth step: photoetching and etching the front surface of the structural layer to form a beam;
fifth step: photoetching and etching the first bottom cover plate to form a groove, wherein the etching depth is h 0 -h 2 -h 3 +h 1 ；
Sixth step: photoetching and etching the second bottom cover plate to form a groove, wherein the etching depth is h 3 ；
Seventh step: photoetching and etching the bottom cover plate to form a boss, wherein the etching depth is h 4 ；
Eighth step: and the structural layer is bonded with the bottom cover plate to obtain the MEMS high g value accelerometer.
10. A dynamic performance tuning system for a MEMS high g-value accelerometer, for implementing a dynamic performance tuning method for a MEMS high g-value accelerometer according to any one of claims 1 to 9, the system comprising:
the model building module is used for building a MEMS high-g-value accelerometer model, and the MEMS high-g-value accelerometer model comprises a mass block, a beam, a structural frame and a bottom cover plate;
the dynamic performance calculation module is used for calculating the damping ratio of the MEMS high-g value accelerometer model to reflect dynamic performance;
the strategy construction module is used for judging whether the dynamic performance meets the requirement, if so, the model does not need to be improved, and if not, a corresponding improvement strategy is selected according to the surface area of the mass block and whether to allow the performance of the accelerometer except the dynamic performance to change, and the improvement strategy specifically comprises:
strategy 1: when the surface area of the mass block is large and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 =0, by only reducing the spacing h between the mass and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 2: when the surface area of the mass block is small and other performance changes besides dynamic performance are not allowed, the MEMS high g value accelerometer model is improved by adopting a damping method, and h is 3 =0，h 4 > 0 by reducing the spacing h of the mass from the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
strategy 3: when the surface area of the mass block is larger and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 =0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 Dynamic performance adjustment is realized;
strategy 4: when the surface area of the mass block is smaller and the partial sensitivity is allowed to be sacrificed to improve the linearity and overload resistance, the intrinsic frequency method and the damping method are adopted to improve the MEMS high g value accelerometer model, wherein 0 < h 3 ＜h 0 ，h 4 > 0 by increasing h 3 To reduce the mass of the mass block and the distance h between the mass block and the bottom cover plate 1 And the distance h between the beam and the bottom cover plate 2 Dynamic performance adjustment is realized;
when the MEMS high g value accelerometer model is improved, a lug boss is manufactured on a bottom cover plate by utilizing an etching process, so that the lug boss is positioned right below a beam and a mass block or even embedded into the mass block, and h is used 0 Represents the thickness of the mass, h 1 Represents the distance between the mass block and the bottom cover plate, h 2 Represents the distance between the beam and the bottom cover plate, h 3 Represents the etching depth of the mass block, h 4 Representing the height of the boss below the beam;
the preparation module is used for obtaining h by utilizing a dynamic performance feedback formula according to an improvement strategy and actual dynamic performance requirements 1 ~h 4 The determined value is finally based on h 1 ~h 4 The determined value completes the preparation of the MEMS high g value accelerometer.
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TW200516255A (en) * 2003-11-14 2005-05-16 Asian Pacific Microsystems A micro accelerometer manufacture method and its application
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