CN117317792A - Ground state induction excited state mixed pumping mid-infrared laser - Google Patents
Ground state induction excited state mixed pumping mid-infrared laser Download PDFInfo
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- CN117317792A CN117317792A CN202311605490.3A CN202311605490A CN117317792A CN 117317792 A CN117317792 A CN 117317792A CN 202311605490 A CN202311605490 A CN 202311605490A CN 117317792 A CN117317792 A CN 117317792A
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- 238000005086 pumping Methods 0.000 title claims abstract description 35
- 230000005281 excited state Effects 0.000 title claims abstract description 19
- 230000005283 ground state Effects 0.000 title claims abstract description 18
- 230000006698 induction Effects 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 230000007704 transition Effects 0.000 claims abstract description 14
- 230000033228 biological regulation Effects 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 7
- 230000009103 reabsorption Effects 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000011161 development Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000009102 absorption Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- -1 Rare earth ions Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention relates to a ground state induction excited state mixed pumping mid-infrared laser, which comprises a pumping source, a Tm doped crystal and a resonant cavity; the wavelength range of the pumping source is 785-793nm, the concentration of Tm ions in the Tm-doped crystal is 1.5-3%, the Tm-doped crystal is arranged in a resonant cavity, and total reflection coating is carried out in the resonant cavity by 1.45-1.5 mu m; the pump light emitted by the pump source is incident into the Tm doped crystal, the Tm doped crystal is used for realizing particle number inversion and stimulated emission of light, the pump light generates auxiliary pumping with the same wavelength as the pump source in the Tm doped crystal, and the total reflection coating in the resonant cavity generates pumping to the ground state 3 H 4 → 3 H 5 The energy level transition is closed, and the high-energy excited state is generated by regulation and control induction 3 F 4 Reabsorption assisted pumping process, lifting 3 H 4 → 3 H 5 And finally outputting laser with the wave band of 2.1-2.3 mu m according to the energy level transition probability. The invention can determine the output wavelength of the double-frequency comb, is a frequency comb in a near infrared band, and provides another new direction for the development of a mid-infrared laser.
Description
Technical Field
The invention relates to the technical field of mid-infrared laser, in particular to a ground state induced excited state mixed pumping mid-infrared laser.
Background
The output wavelength of the 2 μm solid laser in the middle infrared band is in the atmospheric window, the absorption band of water and the eye safety area, so the 2 μm solid laser has wide application in the fields of laser medical treatment, laser remote sensing, laser radar, photoelectric countermeasure and environmental monitoring, military and the like, and in recent years, with the development of laser technology and crystal growth technology and the demand of high-power, high-efficiency and high-beam quality 2 μm band solid lasers, more domestic and foreign research institutions are researching the same, so that the 2 μm solid laser has been developed for a long time. The Tm laser using diode pumping is one of ways to achieve continuous and effective output of 2 μm wavelength band with high power, high beam quality and high efficiency at normal temperature, and is also a hot spot studied in recent years;
however, the mid-infrared laser in the prior art has limited development direction, so that the 2.1-2.3 μm long-wave regulation and control output which meets the requirements of atmospheric window space laser communication is difficult to realize, and the beam quality still needs to be further optimized.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects in the prior art, so as to provide the ground state induced excited state mixed pumping mid-infrared laser.
A ground state induced excited state mixed pumping mid-infrared laser comprising: the pump source, the Tm-doped crystal and the resonant cavity; the wavelength range of the pumping source is 785-793nm, the concentration of Tm ions in the Tm-doped crystal is 1.5-3%, the Tm-doped crystal is arranged in a resonant cavity, and total reflection coating is carried out in the resonant cavity by 1.45-1.5 mu m;
the pump light emitted by the pump source is incident into a Tm-doped crystal, the Tm-doped crystal is used for realizing particle number inversion and stimulated emission of light, the pump light generates auxiliary pumping with the same wavelength as the pump source in the Tm-doped crystal, and the total reflection coating in the resonant cavity generates pumping to the ground state 3 H 4 → 3 H 5 The energy level transition is closed, and the high-energy excited state is generated by regulation and control induction 3 F 4 Reabsorption assisted pumping process, lifting 3 H 4 → 3 H 5 And finally outputting laser with the wave band of 2.1-2.3 mu m according to the energy level transition probability.
Further, the resonant cavity comprises a total reflection mirror and an output mirror, the Tm doped crystal is arranged between the total reflection mirror and the output mirror, pump light emitted by the pump source enters the resonant cavity through the total reflection mirror, and generated laser with the wave band of 2.1-2.3 mu m is output through the output mirror.
Further, the Tm doped crystal is one of Tm, YAG, tm, YAP or Tm, YLF.
The technical scheme of the invention has the following advantages:
1. the technical scheme of the invention adopts mixed pump light, further determines the concentration of Tm ions in the Tm-doped crystal, inhibits multi-phonon relaxation, improves the probability of high-level conversion, and simultaneously carries out total reflection coating on a resonant cavity mirror to generate ground state pumping 3 H 4 → 3 F 4 Energy level transitionPerforming closed regulation and control to induce high-energy excited state 3 F 4 Re-absorption mixing pumping process, finally, the method is obviously improved 3 H 4 → 3 H 5 The energy level transition probability can determine the output wavelength of the double-frequency comb, is a frequency comb in a near infrared band, realizes 2.1-2.3 mu m long wave regulation and control output, and provides another new direction for the development of a mid-infrared laser.
2. The resonant cavity in the technical scheme provided by the invention is of a multi-path oscillation cavity type, and can optimize the quality of the light beam.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of an infrared laser according to the present invention;
FIG. 2 is a graph showing the correspondence between the absorption and emission lines of a YLF crystal and the energy level transition structure of a Tm-doped laser medium;
FIG. 3 is a schematic diagram of a ground state induced excited state reabsorption auxiliary pumping configuration.
Reference numerals illustrate:
1-a pump source; 2-total reflection mirror; 3-Tm doped crystals;
4-output mirror.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a ground state induced excited state mixed pumping mid-infrared laser includes: the pump source 1, the Tm-doped crystal 3 and the resonant cavity; the wavelength range of the pump source 1 is 785-793nm (namely the center wavelength of the pump source 1 is 790 nm), the concentration of Tm ions in the Tm-doped crystal 3 is 1.5-3%, the Tm-doped crystal 3 is arranged in a resonant cavity, and total reflection coating is carried out in the resonant cavity by 1.45-1.5 mu m; the coated film system has high transmittance to GSA pump light and ESA pump light, so that the film system has high reflectivity.
The pump light emitted by the pump source 1 is incident into the Tm-doped crystal 3, the Tm-doped crystal 3 is used for realizing particle number inversion and stimulated emission of light, the pump light generates auxiliary pump with the same wavelength as the pump source 1 in the Tm-doped crystal 3, and the total reflection coating in the resonant cavity generates pumping to the ground state 3 H 4 → 3 H 5 The energy level transition is closed, and the high-energy excited state is generated by regulation and control induction 3 F 4 Reabsorption assisted pumping process, lifting 3 H 4 → 3 H 5 And finally outputting laser with the wave band of 2.1-2.3 mu m according to the energy level transition probability.
Rare earth ions Tm 3+ Can be mixed into YLF, YAP, YAG matrix materials, the laser characteristics under different matrix materials are different due to Stark energy level splitting effect, but the energy level structure operation process belongs to the same configuration, and FIG. 2 is a corresponding relation diagram of an absorption emission line taking Tm: YLF crystal as an example and an energy level transition structure of Tm-doped laser medium, so that the conventional Tm-doped laser medium is mainly subjected to ground state pumping by adopting a wave band near 785-793nm, and particles are formed by 3 H 6 Transition to 3 H 4 Energy level, whereby the particles transition to a lower energy level 3 H 4 → 3 H 5 (2.1~2.3μm)、 3 H 4 → 3 F 4 (1.45~1.5μm)、 3 F 4 → 3 H 6 There is a chance of lasing between (1.9-2.1 μm) energy levels, but under the crystal multi-phonon relaxation effect at Tm 3+ The energy level up-conversion is weak at low doping concentration, so that an energy level self-termination effect is formed, and laser excitation is difficult to form.
Based on the invention, the basic state induction excited state reabsorption auxiliary pumping concept is provided, the basic state induction excited state reabsorption auxiliary pumping configuration is shown as a schematic diagram shown in fig. 3, the invention further analyzes the multi-phonon relaxation process of the Tm doped crystal, researches the high-energy transition excitation lines of different doped matrixes, and establishes a basic state induction excited state auxiliary pumping Tm doped laser operation dynamics model. The method quantitatively analyzes the ground state pumping wavelength and speed, crystal activated ion doping and excitation gain characteristics under the film system parameters of the resonant cavity, determines the 2 mu m wide spectrum coverage gain regulation dynamic range of different Tm doped gain media, and provides a theoretical basis for realizing 2.1-2.3 mu m long wave regulation output which meets the atmospheric window space laser communication requirement.
In this embodiment, the resonant cavity includes a total reflection mirror 2 and an output mirror 4, the Tm doped crystal 3 is disposed between the total reflection mirror 2 and the output mirror 4, the pump light emitted by the pump source 1 enters the resonant cavity through the total reflection mirror 2, and the generated laser with a wavelength band of 2.1-2.3 μm is output through the output mirror 4.
In this embodiment, the Tm doped crystal 3 is one of Tm: YAG, tm: YAP, or Tm: YLF.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (3)
1. A ground state induced excited state mixed pumping mid-infrared laser, comprising: a pump source (1), a Tm doped crystal (3) and a resonant cavity; the wavelength range of the pumping source (1) is 785-793nm, the concentration of Tm ions in the Tm-doped crystal (3) is 1.5-3%, the Tm-doped crystal (3) is arranged in a resonant cavity, and total reflection coating is carried out in the resonant cavity by 1.45-1.5 mu m;
the pump light emitted by the pump source (1) is incident into the Tm-doped crystal (3), the Tm-doped crystal (3) is used for realizing particle number inversion and stimulated emission of light, the pump light generates auxiliary pump with the same wavelength as the pump source (1) in the Tm-doped crystal (3), and the total reflection coating in the resonant cavity generates pumping to the ground state 3 H 4 → 3 H 5 The energy level transition is closed, and the high-energy excited state is generated by regulation and control induction 3 F 4 Reabsorption assisted pumping process, lifting 3 H 4 → 3 H 5 And finally outputting laser with the wave band of 2.1-2.3 mu m according to the energy level transition probability.
2. The ground state induction excited state mixed pumping mid-infrared laser according to claim 1, wherein the resonant cavity comprises a total reflection mirror (2) and an output mirror (4), the Tm doped crystal (3) is arranged between the total reflection mirror (2) and the output mirror (4), pumping light emitted by the pumping source (1) enters the resonant cavity through the total reflection mirror (2), and generated laser with the wave band of 2.1-2.3 μm is output through the output mirror (4).
3. The ground state induced excited state mixed pumping mid-infrared laser of claim 1, wherein the Tm doped crystal (3) is one of Tm: YAG, tm: YAP, or Tm: YLF.
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| CN202311605490.3A CN117317792B (en) | 2023-11-29 | 2023-11-29 | Ground state induction excited state mixed pumping mid-infrared laser |
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| CN202311605490.3A CN117317792B (en) | 2023-11-29 | 2023-11-29 | Ground state induction excited state mixed pumping mid-infrared laser |
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| CN117317792B CN117317792B (en) | 2024-02-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4967416A (en) * | 1990-02-28 | 1990-10-30 | The United States Of America As Represented By The Secretary Of The Navy | Thulium-doped fluorozirconate fiber laser pumped by a diode laser source |
| GB9305604D0 (en) * | 1993-03-18 | 1993-05-05 | British Telecomm | Optical amplifier and laser |
| US5388112A (en) * | 1994-04-29 | 1995-02-07 | The United States Of America As Represented By The Secretary Of The Navy | Diode-pumped, continuously tunable, 2.3 micron CW laser |
| CN1701475A (en) * | 2003-07-28 | 2005-11-23 | 日本电信电话株式会社 | Fiber laser, spontaneous emission light source and optical fiber amplifier |
| CN103606808A (en) * | 2013-12-10 | 2014-02-26 | 电子科技大学 | Medium-infrared fiber laser for dual-wavelength cascading pumping |
| CN106253052A (en) * | 2016-08-31 | 2016-12-21 | 深圳大学 | Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers |
| CN206099036U (en) * | 2016-08-31 | 2017-04-12 | 深圳大学 | Device for generating 2. 3 micron wave band pulsed laser |
| CN112563872A (en) * | 2020-12-10 | 2021-03-26 | 江苏师范大学 | Dual-wavelength pumping thulium-doped laser based on GSA and ESA |
| CN112688146A (en) * | 2020-12-25 | 2021-04-20 | 中红外激光研究院(江苏)有限公司 | 1064nm intracavity pumped 2.3 mu m thulium-doped solid laser |
| CN115693378A (en) * | 2022-11-30 | 2023-02-03 | 苏州思萃高强激光智能制造技术研究所有限公司 | Device and method for efficiently generating 2.3 mu m laser |
| CN116742463A (en) * | 2023-08-15 | 2023-09-12 | 长春理工大学 | Intermediate infrared laser of dual-wavelength pumping bonding crystal |
-
2023
- 2023-11-29 CN CN202311605490.3A patent/CN117317792B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4967416A (en) * | 1990-02-28 | 1990-10-30 | The United States Of America As Represented By The Secretary Of The Navy | Thulium-doped fluorozirconate fiber laser pumped by a diode laser source |
| GB9305604D0 (en) * | 1993-03-18 | 1993-05-05 | British Telecomm | Optical amplifier and laser |
| US5388112A (en) * | 1994-04-29 | 1995-02-07 | The United States Of America As Represented By The Secretary Of The Navy | Diode-pumped, continuously tunable, 2.3 micron CW laser |
| CN1701475A (en) * | 2003-07-28 | 2005-11-23 | 日本电信电话株式会社 | Fiber laser, spontaneous emission light source and optical fiber amplifier |
| CN103606808A (en) * | 2013-12-10 | 2014-02-26 | 电子科技大学 | Medium-infrared fiber laser for dual-wavelength cascading pumping |
| CN106253052A (en) * | 2016-08-31 | 2016-12-21 | 深圳大学 | Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers |
| CN206099036U (en) * | 2016-08-31 | 2017-04-12 | 深圳大学 | Device for generating 2. 3 micron wave band pulsed laser |
| CN112563872A (en) * | 2020-12-10 | 2021-03-26 | 江苏师范大学 | Dual-wavelength pumping thulium-doped laser based on GSA and ESA |
| CN112688146A (en) * | 2020-12-25 | 2021-04-20 | 中红外激光研究院(江苏)有限公司 | 1064nm intracavity pumped 2.3 mu m thulium-doped solid laser |
| CN115693378A (en) * | 2022-11-30 | 2023-02-03 | 苏州思萃高强激光智能制造技术研究所有限公司 | Device and method for efficiently generating 2.3 mu m laser |
| CN116742463A (en) * | 2023-08-15 | 2023-09-12 | 长春理工大学 | Intermediate infrared laser of dual-wavelength pumping bonding crystal |
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| CN117317792B (en) | 2024-02-23 |
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