CN117303932B - Method for thoroughly solving problem of large bubbles generated by wet oxidation DBC sintering - Google Patents
Method for thoroughly solving problem of large bubbles generated by wet oxidation DBC sintering Download PDFInfo
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- CN117303932B CN117303932B CN202311345322.5A CN202311345322A CN117303932B CN 117303932 B CN117303932 B CN 117303932B CN 202311345322 A CN202311345322 A CN 202311345322A CN 117303932 B CN117303932 B CN 117303932B
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- 238000005245 sintering Methods 0.000 title claims abstract description 146
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009279 wet oxidation reaction Methods 0.000 title claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 230000005496 eutectics Effects 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 abstract description 12
- 238000005457 optimization Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052573 porcelain Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
- C04B2237/064—Oxidic interlayers based on alumina or aluminates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of ceramic copper-clad plates, in particular to a method for thoroughly solving the problem of large bubbles generated by wet oxidation of DBC sintering. The following scheme is specifically proposed: optimizing by adjusting the following process parameters: (1) adjusting the sintering furnace type; (2) adjusting a sintering temperature curve; wherein 1-7 temperature areas are heating areas, 8-12 temperature areas are sintering eutectic areas, and 13-16 temperature areas are cooling areas; (3) adjusting a sintering jig; and (4) adjusting the placing mode of the sample to be sintered. Finally thoroughly solves the problem that large bubbles are generated when the wet oxidation DBC is sintered.
Description
Technical Field
The invention relates to the technical field of ceramic copper-clad plates, in particular to a method for thoroughly solving the problem of large bubbles generated by wet oxidation of DBC sintering.
Background
The traditional dry DBC product utilizes cuprous oxide eutectic liquid to wet the surfaces of copper sheets and aluminum oxide ceramics which are in contact with each other, so that the copper sheets and the aluminum oxide ceramics are firmly combined together. Solid CuAlO formed on the surface of alumina 2 The layer is closely contacted with the ceramic surface and forms a certain mosaic structure, and provides a mechanical interlocking effect. CuAlO due to interfacial layer 2 The thickness is smaller, and enough deformation is not easy to generate to absorb thermal stress, and the thermal stress can damage the ceramic chip and the copper sheet, so that the bending strength and the cold-hot cycle performance of the copper-clad ceramic plate are reduced.
The DBC product manufactured by the wet oxidation process has the advantages of low cost, high bending strength, good reliability and the like, and is expected to be popularized in a large scale, but the development of the wet oxidation process suitable for mass production is not smooth, because the process has the problem of large bubbles after sintering when mass production, and the details are as follows:
such large bubbles can have an impact on the performance of the product and can cause significant loss in yield. Therefore, how to solve the problem of large bubbles on the bonding surface of the wet oxidation DBC becomes an important point of research in the industry.
Disclosure of Invention
The invention aims to provide a method for thoroughly solving the problem of sintering large bubbles by wet oxidation DBC so as to solve the problem in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme:
(1) Adjusting a sintering furnace;
(2) Adjusting a sintering temperature curve; wherein 1-7 temperature areas are heating areas, 8-12 temperature areas are sintering eutectic areas, and 13-16 temperature areas are cooling areas;
(3) Adjusting a sintering jig;
(4) And (5) adjusting the placing mode of the sample to be sintered.
Further, the sintering furnace type is adjusted to be a CT sintering furnace with more control points.
Further, the CT sintering furnace has 16 temperature areas; wherein, in the 7-16 temperature area, each temperature has 6 independent power control modules, which can control the temperature in the upper, lower, left and right directions.
Further, the sintering temperature profile: heating zone: 1 temperature zone: 0-600 ℃,2 temperature zone: 600-680 ℃,3 temperature zone: 680-760 ℃,4 temperature zone: 760-840 ℃,5 temperature zone: 840-920 ℃,6 temperature zone: 920-1000 ℃,7 temperature areas: 1000-1050 ℃; sintering eutectic region: 8 temperature zone: 1030-1095 ℃,9 temperature zone: 1080-1095 ℃,10 temperature zone: 1080-1095 ℃,11 temperature zone: 1070-1090 ℃,12 temperature zone: 1070-1090 ℃; and (3) a cooling area: 13 temperature zone: 1040-1090 ℃,14 temperature zone: 990-1040 ℃,15 temperature zone: 940-990 ℃,16 temperature zone: 900-940 ℃.
Further, the sintering time of the heating area is 10-15 min, the sintering time of the sintering eutectic area is 7-12 min, and the sintering time of the cooling area is 5-9 min.
Further, the sintering jig is a laminated fully-wrapped silicon carbide jig, and has a double-layer cover plate structure, wherein the lower layer is provided with two cover plates, and the upper layer is provided with one cover plate.
Further, the placing mode of the sample to be sintered is as follows: and (3) adjusting the placing mode of the copper sheet to enable the curved concave surface of the copper sheet to face upwards.
Compared with the prior art, the invention has the following beneficial effects: the sintering temperature control is more accurate; the sintering jig with the double-layer cover plate structure can effectively prevent particles from falling between copper and porcelain, can form better temperature gradient, and can avoid large bubbles to a great extent; the novel sintering temperature curve is used, so that the sintering product has longer cooling time, slowly releases stress, is slower in deformation, is beneficial to reducing the residual gas quantity between copper and porcelain, shortens a high-temperature area, avoids the phenomenon of early bonding at the edge of the product positioned in the center of a mesh belt, and gives full time for gas discharge between copper and porcelain; the arrangement mode of the copper sheets and the porcelain sheets is changed, so that the copper porcelain bonding process is smooth and orderly, and the improvement of sintering large bubbles is facilitated.
(1) Compared with the traditional BTU furnace, the CT furnace with a more complex structure has the advantages of longer furnace chamber, more temperature areas, more accurate temperature control and the like;
(2) Because a plurality of small particles of hearths or mesh belts and other impurities are blown down into gaps between the copper sheets and the ceramic sheets in the sintering process, wherein the organic impurities are decomposed at high temperature to generate gas and aggravate the generation of large bubbles, the sintering jig is adjusted to be a laminated type fully-wrapped silicon nitride jig, and the sintering jig has a double-layer cover plate structure, so that the particles can be effectively prevented from falling between copper and ceramic, better temperature gradient (high at two sides and low in middle) can be formed, and the generation of large bubbles can be avoided to a great extent;
(3) The novel temperature curve is adopted, the high temperature area is reduced, and the cooling area is prolonged, so that the stress release of the product is more sufficient, the gas in the joint surface is more favorably discharged, and better thermal cycle performance and more uniform surface state can be obtained;
(4) Through analysis of the sintering bonding process, the arrangement mode of copper and porcelain during sintering is changed, and large bubbles are thoroughly eliminated.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a stacked fully wrapped silicon carbide jig;
FIG. 2 is a schematic cross-sectional view of a stacked fully encapsulated silicon carbide jig;
FIG. 3 is a graph of the sintering temperature after adjustment in example 1;
FIG. 4 is a graph of the sintering temperature after adjustment in example 2;
FIG. 5 is a graph of the sintering temperature after adjustment in example 3;
FIG. 6 is a graph showing sintering temperature curves before adjustment in comparative examples 1 and 3;
FIG. 7 shows the placement of the sample to be sintered after adjustment;
FIG. 8 shows the arrangement of the sample to be sintered before adjustment;
FIG. 9 is the sintered product of example 1;
fig. 10 is the sintered form of comparative example 3.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1: a method for thoroughly solving the problem of large bubbles generated by wet oxidation of DBC sintering comprises the following steps:
(1) The sintering furnace for sintering the DBC adopts a CT sintering furnace with more control points, and the sintering jig is adjusted to be a laminated type fully-wrapped silicon carbide jig with a double-layer cover plate structure, as shown in figure 1; in the specific plane diagram of the sintering jig, as shown in fig. 2, a gasket is placed in the sintering jig, a DCB carrier is placed above the gasket, then the DCB to be sintered is placed on the DCB carrier (the black shaded part in the figure is the DCB to be sintered), and the cover plate is covered for sintering (the sintering jig is provided with two layers of cover plates, the uppermost layer is an upper layer of cover plate, one layer of cover plate is arranged, the second layer is a lower layer of cover plate, two layers of cover plates are arranged, and one upper layer of cover plate is arranged).
(2) Adjusting a sintering temperature curve: the sintering temperature curve is provided with 16 temperature areas in total, wherein 7 temperature areas are arranged in the temperature increasing area, 5 temperature areas are arranged in the sintering eutectic area, and 4 temperature areas are arranged in the cooling area;
the heating area is specifically as follows: 1 temperature zone: 580 ℃,2 temperature zone: 660 ℃,3 temperature zone: 740 ℃,4 temperature zone: 820 ℃,5 temperature zone: 900 ℃,6 temperature zone: 980 ℃,7 temperature zone: sintering time in a heating area at 1030 ℃ for 12min;
the sintering eutectic region is specifically: 8 temperature zone: 1094 ℃,9 temperature zone: 1094 ℃,10 temperature zone: 1084 ℃,11 temperature zone: 1084 ℃,12 temperature zone: 1074 ℃, and the sintering time of the sintering eutectic region is 8min;
the cooling area is specifically as follows: 13 temperature zone: 1040 ℃,14 temperature zone: 990 ℃,15 temperature zone: 940 ℃,16 temperature zone: sintering time in a cooling area at 900 ℃ for 6min; the specific sintering temperature curve is shown in fig. 3;
(3) Adjusting the placing mode of the sample to be sintered: placing the treated copper sheet on a ceramic substrate, enabling the curved concave surface of the copper sheet to be upward, and placing the copper sheet into a sintering jig for sintering; the placement mode after adjustment is shown in fig. 7.
Example 2: a method for thoroughly solving the problem of large bubbles generated by wet oxidation of DBC sintering comprises the following steps:
(1) The sintering furnace for sintering the DBC adopts a CT sintering furnace with more control points, and the sintering jig is adjusted to be a laminated type fully-wrapped silicon carbide jig with a double-layer cover plate structure, as shown in figure 1; in the specific plane diagram of the sintering jig, as shown in fig. 2, a gasket is placed in the sintering jig, a DCB carrier is placed above the gasket, then the DCB to be sintered is placed on the DCB carrier (the black shaded part in the figure is the DCB to be sintered), and the cover plate is covered for sintering (the sintering jig is provided with two layers of cover plates, the uppermost layer is an upper layer of cover plate, one layer of cover plate is arranged, the second layer is a lower layer of cover plate, two layers of cover plates are arranged, and one upper layer of cover plate is arranged).
(2) Adjusting a sintering temperature curve: the sintering temperature curve is provided with 16 temperature areas in total, wherein 7 temperature areas are arranged in the temperature increasing area, 5 temperature areas are arranged in the sintering eutectic area, and 4 temperature areas are arranged in the cooling area;
the heating area is specifically as follows: 1 temperature zone: 590 ℃,2 temperature zone: 670 ℃,3 temperature zone: 750 ℃,4 temperature zone: 830 ℃,5 temperature zone: 910 ℃,6 temperature zone: 990 ℃,7 temperature zone: 1040 ℃, and the sintering time in the heating zone is 12min;
the sintering eutectic region is specifically: 8 temperature zone: 1090 ℃,9 temperature zone: 1090 ℃,10 temperature zone: 1090 ℃,11 temperature zone: 1090 ℃,12 temperature zone: 1090 ℃ and 8min in the sintering eutectic region;
the cooling area is specifically as follows: 13 temperature zone: 1040 ℃,14 temperature zone: 1010 ℃,15 temperature zone: 960 ℃,16 temperature zone: sintering time in a cooling area at 910 ℃ for 6min; the specific sintering temperature curve is shown in fig. 4;
(3) Adjusting the placing mode of the sample to be sintered: placing the treated copper sheet on a ceramic substrate, enabling the curved concave surface of the copper sheet to be upward, and placing the copper sheet into a sintering jig for sintering; the placement mode after adjustment is shown in fig. 7.
Example 3: a method for thoroughly solving the problem of large bubbles generated by wet oxidation of DBC sintering comprises the following steps:
(1) The sintering furnace for sintering the DBC adopts a CT sintering furnace with more control points, and the sintering jig is adjusted to be a laminated type fully-wrapped silicon carbide jig with a double-layer cover plate structure, as shown in figure 1; in the specific plane diagram of the sintering jig, as shown in fig. 2, a gasket is placed in the sintering jig, a DCB carrier is placed above the gasket, then the DCB to be sintered is placed on the DCB carrier (the black shaded part in the figure is the DCB to be sintered), and the cover plate is covered for sintering (the sintering jig is provided with two layers of cover plates, the uppermost layer is an upper layer of cover plate, one layer of cover plate is arranged, the second layer is a lower layer of cover plate, two layers of cover plates are arranged, and one upper layer of cover plate is arranged).
(2) Adjusting a sintering temperature curve: the sintering temperature curve is provided with 16 temperature areas in total, wherein 7 temperature areas are arranged in the temperature increasing area, 5 temperature areas are arranged in the sintering eutectic area, and 4 temperature areas are arranged in the cooling area;
the heating area is specifically as follows: 1 temperature zone: 600 ℃,2 temperature zone: 680 ℃,3 temperature zone: 760 ℃,4 temperature zone: 840 ℃,5 temperature zone: 920 ℃,6 temperature zone: 1000 ℃,7 temperature zone: sintering time in a heating area at 1050 ℃ for 12min;
the sintering eutectic region is specifically: 8 temperature zone: 1085 ℃,9 temperature zone: 1085 ℃,10 temperature zone: 1085 ℃,11 temperature zone: 1085 ℃,12 temperature zone: 1085 ℃, and sintering time of a sintering eutectic region is 8min;
the cooling area is specifically as follows: 13 temperature zone: 1030 ℃,14 temperature zone: 1000 ℃,15 temperature zone: 950 ℃,16 temperature zone: sintering time in a cooling area at 900 ℃ for 6min; the specific sintering temperature curve is shown in fig. 5;
(3) Adjusting the placing mode of the sample to be sintered: placing the treated copper sheet on a ceramic substrate, enabling the curved concave surface of the copper sheet to be upward, and placing the copper sheet into a sintering jig for sintering; the placement mode after adjustment is shown in fig. 7.
Comparative example 1: (1) The sintering temperature curve is not regulated, an old sintering temperature curve is used, the sintering temperature curve comprises 16 temperature areas, 9 heating areas, 6 sintering eutectic areas and 1 cooling area;
the heating area is specifically as follows: 1 temperature zone: 560 ℃,2 temperature zone: 640 ℃,3 temperature zone: 730 ℃,4 temperature zone: 790 ℃,5 temperature zone: 850 ℃,6 temperature zone: 890 ℃,7 temperature zone: 915 ℃;8 temperature zone: 1000 ℃,9 temperature zone: sintering time in a heating area at 1052 ℃ is 14.5min;
the sintering eutectic region is specifically: 10 temperature zones: 1086 ℃,11 temperature zone: 1086 ℃,12 temperature zone: 1086 ℃;13 temperature zone: 1086 ℃,14 temperature zone: 1084 ℃,15 temperature zone: 1084 ℃, and the sintering time of the sintering eutectic region is 9.5min;
the cooling area is specifically as follows: 16 temperature zones: sintering time in a cooling area at 1060 ℃ is 1.6min; the specific old sintering temperature curve is shown in fig. 6; otherwise, the same as in example 1;
comparative example 2: the placing mode of the sample to be sintered is not adjusted; placing the treated copper sheet on a ceramic substrate, enabling the curved convex surface of the copper sheet to be upward, and placing the copper sheet into a sintering jig for sintering; the original sample placement mode to be sintered is shown in fig. 8; otherwise, the same as in example 1;
comparative example 3: (1) The sintering temperature curve is not regulated, an old sintering temperature curve is used, the sintering temperature curve comprises 16 temperature areas, 9 heating areas, 6 sintering eutectic areas and 1 cooling area;
the heating area is specifically as follows: 1 temperature zone: 560 ℃,2 temperature zone: 640 ℃,3 temperature zone: 730 ℃,4 temperature zone: 790 ℃,5 temperature zone: 850 ℃,6 temperature zone: 890 ℃,7 temperature zone: 915 ℃;8 temperature zone: 1000 ℃,9 temperature zone: sintering time in a heating area at 1052 ℃ is 14.5min;
the sintering eutectic region is specifically: 10 temperature zones: 1086 ℃,11 temperature zone: 1086 ℃,12 temperature zone: 1086 ℃;13 temperature zone: 1086 ℃,14 temperature zone: 1084 ℃,15 temperature zone: 1084 ℃, and the sintering time of the sintering eutectic region is 9.5min;
the cooling area is specifically as follows: 16 temperature zones: sintering time in a cooling area at 1060 ℃ is 1.6min; the specific old sintering temperature curve is shown in fig. 6;
(2) The placing mode of the sample to be sintered is not adjusted; placing the treated copper sheet on a ceramic substrate, enabling the curved convex surface of the copper sheet to be upward, and placing the copper sheet into a sintering jig for sintering; the original sample placement mode to be sintered is shown in fig. 8; otherwise, the same as in example 1 was conducted.
Performance test: comparative tests were carried out for the adjustment of the sintering temperature curve and the arrangement mode in examples 1 to 3 and comparative examples 1 to 3, respectively, and specific data are as follows:
| examples | Sample placement mode to be sintered | Temperature profile | Number of sinters | Large bubble number | Large bubble rate |
| Example 1 | OptimizationAfter that, as shown in FIG. 7 | After optimization, FIG. 3 shows | 557 | 0 | 0.00％ |
| Example 2 | After optimization, FIG. 7 shows | After optimization, FIG. 4 shows | 789 | 2 | 0.25％ |
| Example 3 | After optimization, FIG. 7 shows | After optimization, FIG. 5 shows | 597 | 1 | 0.17％ |
| Comparative example 1 | After optimization, FIG. 7 shows | Before optimization, FIG. 6 shows | 1030 | 22 | 2.1％ |
| Comparative example 2 | Before optimization, FIG. 8 shows | After optimization, FIG. 3 shows | 643 | 40 | 6.22％ |
| ComparisonExample 3 | Before optimization, FIG. 8 shows | Before optimization, FIG. 6 shows | 980 | 156 | 15.9％ |
Analysis of results: by comparing the arrangement mode of the sintered copper porcelain with the comparison before and after the optimization of the sintering temperature curve, the influence of the arrangement mode of the copper porcelain is larger compared with the optimization of the sintering curve. By comprehensively using the method, the occurrence rate of the large bubbles can be obviously reduced, the occurrence rate of the large bubbles in the embodiment 1 is reduced to 0%, the generation of sintering bubbles is thoroughly solved, the technology is suitable for mass production at present, and the feasibility and the effectiveness of the scheme are further verified through long-term mass production of accumulated data.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A method for thoroughly solving the problem of large bubbles generated by wet oxidation DBC sintering is characterized by comprising the following steps: the method comprises the following steps: taking a sample to be sintered, and adjusting the following process parameters:
(1) Adjusting a sintering furnace;
(2) Adjusting a sintering temperature curve; wherein 1-7 temperature areas are heating areas, 8-12 temperature areas are sintering eutectic areas, and 13-16 temperature areas are cooling areas;
(3) Adjusting a sintering jig;
(4) Adjusting the placing mode of the sample to be sintered;
the sintering temperature profile: heating zone: 1 temperature zone: 0-600 ℃,2 temperature zone: 600-680 ℃,3 temperature zone: 680-760 ℃,4 temperature zone: 760-840 ℃,5 temperature zone: 840-920 ℃,6 temperature zone: 920-1000 ℃,7 temperature areas: 1000-1050 ℃; sintering eutectic region: 8 temperature zone: 1030-1095 ℃,9 temperature zone: 1080-1095 ℃,10 temperature zone: 1080-1095 ℃,11 temperature zone: 1070-1090 ℃,12 temperature zone: 1070-1090 ℃; and (3) a cooling area: 13 temperature zone: 1040-1090 ℃,14 temperature zone: 990-1040 ℃,15 temperature zone: 940-990 ℃,16 temperature zone: 900-940 ℃;
the placing mode of the sample to be sintered is as follows: and (3) adjusting the placing mode of the copper sheet to enable the curved concave surface of the copper sheet to face upwards.
2. The method for thoroughly solving the problem of wet oxidation of DBC sintering large bubbles according to claim 1, wherein: the sintering furnace type is adjusted to be a CT sintering furnace.
3. The method for thoroughly solving the problem of wet oxidation of DBC sintering large bubbles according to claim 2, wherein: the temperature of the CT sintering furnace 7-16 temperature areas can be controlled from the upper direction, the lower direction, the left direction and the right direction.
4. The method for thoroughly solving the problem of wet oxidation of DBC sintering large bubbles according to claim 1, wherein: the sintering time of the heating area is 10-15 min, the sintering time of the sintering eutectic area is 7-12 min, and the sintering time of the cooling area is 5-9 min.
5. The method for thoroughly solving the problem of wet oxidation of DBC sintering large bubbles according to claim 1, wherein: the sintering jig is a laminated fully-wrapped silicon carbide jig.
6. The method for thoroughly solving the problem of wet oxidation of DBC sintered large bubbles according to claim 5, wherein the method comprises the following steps: the laminated full-wrapped silicon carbide jig is of a double-layer cover plate structure, wherein two cover plates are arranged on the lower layer of the jig, and one cover plate is arranged on the upper layer of the jig.
7. A method of thoroughly solving the problem of wet oxidation of DBC sintering large bubbles according to any one of claims 1-6 to obtain DBC without sintering large bubbles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311345322.5A CN117303932B (en) | 2023-10-18 | 2023-10-18 | Method for thoroughly solving problem of large bubbles generated by wet oxidation DBC sintering |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311345322.5A CN117303932B (en) | 2023-10-18 | 2023-10-18 | Method for thoroughly solving problem of large bubbles generated by wet oxidation DBC sintering |
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| Publication Number | Publication Date |
|---|---|
| CN117303932A CN117303932A (en) | 2023-12-29 |
| CN117303932B true CN117303932B (en) | 2024-03-19 |
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| CN103819215A (en) * | 2014-03-20 | 2014-05-28 | 李磊 | Preparation method of aluminium nitride base ceramic copper-clad plate |
| CN112624787A (en) * | 2020-12-16 | 2021-04-09 | 南京缔邦新材料科技有限公司 | Preparation method of ceramic copper-clad substrate |
| CN116037746A (en) * | 2023-02-01 | 2023-05-02 | 江苏富乐华半导体科技股份有限公司 | Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet |
| CN116387163A (en) * | 2023-03-16 | 2023-07-04 | 上海富乐华半导体科技有限公司 | Method for improving bad sintering bubbles of DCB substrate of thin ceramic chip |
| CN116589297A (en) * | 2023-04-28 | 2023-08-15 | 上海富乐华半导体科技有限公司 | Method for reducing sintering bubbles at tail end of DCB substrate |
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| DE102012101057A1 (en) * | 2011-12-27 | 2013-06-27 | Curamik Electronics Gmbh | Process for the preparation of DCB substrates |
| EP3043135A1 (en) * | 2015-01-08 | 2016-07-13 | Linde Aktiengesellschaft | Apparatus and method for controlling a sintering process |
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|---|---|---|---|---|
| CN103819215A (en) * | 2014-03-20 | 2014-05-28 | 李磊 | Preparation method of aluminium nitride base ceramic copper-clad plate |
| CN112624787A (en) * | 2020-12-16 | 2021-04-09 | 南京缔邦新材料科技有限公司 | Preparation method of ceramic copper-clad substrate |
| CN116037746A (en) * | 2023-02-01 | 2023-05-02 | 江苏富乐华半导体科技股份有限公司 | Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet |
| CN116387163A (en) * | 2023-03-16 | 2023-07-04 | 上海富乐华半导体科技有限公司 | Method for improving bad sintering bubbles of DCB substrate of thin ceramic chip |
| CN116589297A (en) * | 2023-04-28 | 2023-08-15 | 上海富乐华半导体科技有限公司 | Method for reducing sintering bubbles at tail end of DCB substrate |
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