CN117279458A - Display panel and display device - Google Patents
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- CN117279458A CN117279458A CN202311526406.9A CN202311526406A CN117279458A CN 117279458 A CN117279458 A CN 117279458A CN 202311526406 A CN202311526406 A CN 202311526406A CN 117279458 A CN117279458 A CN 117279458A
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- 239000000758 substrate Substances 0.000 claims abstract description 77
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 238000004806 packaging method and process Methods 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 11
- 230000000007 visual effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 220
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- PMJMHCXAGMRGBZ-UHFFFAOYSA-N subphthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(=N3)N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C3=N1 PMJMHCXAGMRGBZ-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- Electroluminescent Light Sources (AREA)
Abstract
The application provides a display panel and a display device, and relates to the technical field of display. The display panel comprises a substrate, a pixel defining layer, a light emitting device, a plurality of thin film packaging layers and a first photoresist layer, wherein the pixel defining layer is arranged on the substrate; the pixel defining layers are enclosed to form a pixel opening, the light emitting device is located in the pixel opening, the thin film packaging layers are stacked on one side, far away from the substrate, of the light emitting device and the pixel defining layers, the first photoresist layer is arranged between the adjacent thin film packaging layers, the first photoresist layer is enclosed to form a first light outlet, and orthographic projection of the pixel opening on the substrate is located in orthographic projection range of the first light outlet on the substrate. According to the high-angle light-emitting device, the first light resistance layer is reduced in height on the display panel, namely, the distance between the first light resistance layer and the light-emitting device in the vertical direction is shortened, so that large-angle light-emitting of the display panel is not shielded, the problems of quickened visual angle brightness attenuation and visual angle color cast in the conventional COE structure are solved, and the problem that the large-visual angle brightness is excessively fast in attenuation is avoided.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a display device.
Background
The circular polarizer in the display panel is excellent in reducing reflection, but the thickness of the display panel is increased and the brightness is reduced, so that the screen is thinner to improve flexibility, and meanwhile, the light extraction efficiency is improved, the power consumption is reduced and the service life is prolonged on the premise of ensuring contrast, and a color filter is generally adopted to replace the polarizer in the related technology.
Currently, it is generally adopted to provide a black matrix in a non-pixel opening area, and the splay distance of the pixel defining layer with respect to the black matrix opening cannot be set too large to reduce reflection. However, since the black matrix is disposed on the encapsulation layer, the organic light emitting diode (Organic Light Emitting Diode, OLED) emits light at a large viewing angle, thereby accelerating the luminance decay at the large viewing angle and easily deteriorating the visual character bias.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to a display panel and a display device, so as to solve the problems of the prior art that the OLED has a large viewing angle and is easy to deteriorate the visual character bias.
The first aspect of the present application provides a display panel, including a substrate, a pixel defining layer, a light emitting device, a plurality of thin film encapsulation layers and a first photoresist layer, wherein the pixel defining layer is disposed on the substrate; the pixel defining layers are enclosed to form a pixel opening, the light emitting device is located in the pixel opening, the thin film packaging layers are stacked on one side, far away from the substrate, of the light emitting device and the pixel defining layers, the first photoresist layer is arranged between the adjacent thin film packaging layers, the first photoresist layer is enclosed to form a first light outlet, and orthographic projection of the pixel opening on the substrate is located in orthographic projection range of the first light outlet on the substrate.
In one embodiment, the optical filter further comprises a filter layer surrounded by the first photoresist layer; the orthographic projection of the filter layer on the substrate covers the light emitting device.
In one embodiment, the plurality of thin film encapsulation layers includes a first encapsulation layer closest to the substrate and a second encapsulation layer on a side of the first encapsulation layer away from the substrate, the first photoresist layer and the filter layer being both located between the first encapsulation layer and the second encapsulation layer.
In one embodiment, the surface of the filter layer away from the substrate is flush with the surface of the first encapsulation layer away from the substrate.
In one embodiment, the semiconductor device further comprises a second photoresist layer, which is positioned on one side of the plurality of thin film encapsulation layers away from the substrate; the second light resistance layer encloses and forms a second light outlet, and the orthographic projection of the first light outlet on the substrate is positioned in the orthographic projection range of the second light outlet on the substrate.
In one embodiment, the touch metal layer is located between the second photoresist layer and the plurality of thin film encapsulation layers, and the orthographic projection of the touch metal layer on the substrate is located in the orthographic projection range of the second photoresist layer on the substrate.
In one embodiment, the second photoresist layer includes a groove recessed toward the substrate, and the touch metal layer is located in the groove.
In one embodiment, a difference between the width of the second photoresist layer and the width of the touch metal line is less than or equal to 4 micrometers.
In one embodiment, the device further comprises a cover plate, and the cover plate is stacked on one side of the second photoresist layer away from the substrate.
A second aspect of the present application provides a display device comprising any one of the display panels described above.
The application provides a display panel, first light resistance layer locates between the adjacent film encapsulation layer, and the orthographic projection of first light outlet that first light resistance layer encloses formation on the base plate covers the orthographic projection of pixel opening on the base plate to make display panel's light-emitting not sheltered from. Further, compare in the correlation technique with first photoresist layer setting in the film packaging layer one side of keeping away from the base plate, the first photoresist layer of this application highly reduces on display panel, has shortened first photoresist layer and light emitting device's distance on vertical direction promptly for display panel's wide-angle light-emitting is not sheltered from, thereby has improved the problem that the decay of visual angle luminance is accelerated and visual angle colour cast in the current no polarized light display (color filter on TFE, COE) structure, avoids the decay of large visual angle luminance too fast.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a display panel according to another embodiment of the present application.
Fig. 3 is a schematic structural diagram of a display panel according to another embodiment of the present application.
Fig. 4 is a schematic structural diagram of a display device according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, based on the embodiments in the present application, all relevant embodiments obtained by a person of ordinary skill in the art without making any inventive effort fall within the scope of protection of the present application.
It should be further noted that the "first", "second", "third", etc. in the embodiments of the present application are merely for distinguishing each other, and are not used for defining a fixed order, nor a fixed number.
An OLED is an active light emitting device of a sandwich structure consisting of multiple organic layers and two side electrodes. Currently, active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) based display screens have been commercialized in the field of smartphones, watches, notebook computers, etc., where the market share in the field of smartphones has been comparable to that of liquid crystal displays (Liquid Crystal Display, LCD). However, as consumer demand for screen brightness and lifetime increases, it is particularly important to develop higher efficiency OLED devices. Traditional AMOLED adopts circular polaroid to realize the reduction of external environment light reflectivity to reach good integrative black effect. However, 57% of the light is lost due to the lower transmittance of the polarizer. COE technology is essentially a polaroid removing technology, and the light filtering layers capable of transmitting R/G/B light are arranged at the positions corresponding to the R/G/B pixel openings on the packaging layer respectively, so that the transmittance is increased, and the reflectivity is obviously reduced.
However, in order to further reduce the reflectance, a Black Matrix (BM) is provided in the non-pixel opening area in the COE technology, and the splay distance of the pixel defining layer (Pixel Define Layer, PDL) with respect to the BM opening cannot be set too large to reduce the reflectance. However, since the BM is disposed on the encapsulation layer, the light emitted from the large viewing angle of the OLED is blocked, so as to accelerate the luminance attenuation of the large viewing angle, and easily deteriorate the visual character bias. Accordingly, there is a need to develop new device structures to improve viewing angle luminance decay and improve viewing angle bias for COE products.
In order to solve the technical problem, the application provides a display panel and a display device, wherein a first photoresist layer is arranged between adjacent film packaging layers, and orthographic projection of a first light outlet formed by encircling the first photoresist layer on a substrate covers orthographic projection of a pixel opening on the substrate, so that light emergent of the display panel is not shielded. Further, compare in the correlation technique with first photoresist layer setting in the film packaging layer one side of keeping away from the base plate, the first photoresist layer of this application highly reduces on display panel, has shortened first photoresist layer and light emitting device's distance on vertical direction promptly for display panel's wide-angle light-emitting is not sheltered from, thereby has improved the problem that the decay of view angle luminance is accelerated and the colour cast of view angle in the current COE structure, avoids the decay of large view angle luminance too fast.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application. As shown in fig. 1, the display panel 100 includes a substrate 10, a pixel defining layer 20, a light emitting device 30, a plurality of thin film encapsulation layers 40, and a first photoresist layer 50, wherein the pixel defining layer 20 is disposed on the substrate 10, the pixel defining layer 20 encloses to form a pixel opening 22, the light emitting device 30 is disposed in the pixel opening 22, the plurality of thin film encapsulation layers 40 are stacked on a side of the light emitting device 30 and the pixel defining layer 20 away from the substrate 10, the first photoresist layer 50 is disposed between adjacent thin film encapsulation layers 40, the first photoresist layer 50 encloses to form a first light outlet 52, and a front projection of the pixel opening 22 on the substrate 10 is disposed within a front projection range of the first light outlet 52 on the substrate 10, so that light emitted from the light emitting device 30 is not blocked. Further, compare in the correlation technique with first photoresist layer setting in the film packaging layer one side of keeping away from the base plate, the first photoresist layer of this application highly reduces on display panel, has shortened first photoresist layer and light emitting device's distance on vertical direction promptly for display panel's wide-angle light-emitting is not sheltered from, thereby has improved the problem that the decay of view angle luminance is accelerated and the colour cast of view angle in the current COE structure, avoids the decay of large view angle luminance too fast.
In the present embodiment, the substrate 10 is used for carrying the display layer, the array layer, and the like in the display panel 100. The substrate 10 may be a flexible substrate. The flexible substrate may be formed of a polymer material such as Polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyarylate (PAR), or glass Fiber Reinforced Plastic (FRP). The flexible substrate may be transparent, translucent or opaque.
Further, the substrate 10 may have a driving circuit therein for driving the plurality of light emitting devices 30 to emit light of a corresponding color, and for example, the substrate 10 may include a substrate layer, a Barrier layer (Barrier), a Buffer layer (Buffer), a Gate Insulator (GI), a capacitor Insulator (Capacitance Insulator, CI), a Gate electrode, a source drain electrode, an interlayer dielectric layer (Interlayer Dielectric, ILD), a planarization layer (Planarization Layer, PLN), and the like.
In the present embodiment, the pixel defining layer 20 is disposed on the substrate 10, and the pixel defining layer 20 can separate each sub-pixel of the organic light emitting layer to avoid each sub-pixel interfering with each other in the display panel 100. Alternatively, the pixel defining layer 20 may be made of a light-transmitting material, so that the light of the light emitting unit 30 can better pass through the pixel defining layer. Optionally, the pixel defining layer 20 may be made of an opaque material, so as to improve the light absorption of the pixel defining layer 20, reduce the reflectivity of the display panel 100, further reduce the optical crosstalk between the adjacent light emitting devices 30, and improve the display effect of the display panel 100.
In the present embodiment, the light emitting devices 30 include the anode layer 32, the organic light emitting layer 34 and the cathode layer 36 sequentially disposed from bottom to top, the anode layer 32 and the organic light emitting layer 34 of adjacent light emitting devices 30 may be separated by the pixel defining layer 20, and the cathode layer 36 of each light emitting device 30 or the cathode layers 36 of some light emitting devices 30 may be connected together so as to have an equipotential.
Alternatively, the plurality of light emitting devices may be a single kind of light emitting device, which is a light emitting device that can emit light of a single color, for example, a light emitting device that can emit white light. Alternatively, the plurality of light emitting devices may be different kinds of light emitting devices, and the different kinds of light emitting devices may be any of light emitting devices that emit light of different colors, such as, for example, a light emitting device that emits blue light, a light emitting device that emits red light, a light emitting device that emits green light, a light emitting device that emits yellow light, and a light emitting device that emits white light.
In this embodiment, the multiple thin film encapsulation layers 40 are used for encapsulating the light emitting device 30, so as to achieve the purpose of isolating water and oxygen, reduce the probability of failure of the light emitting device 30 and the underlying layer structure caused by the entry of impurities such as water and oxygen into the light emitting device 30, and ensure that the service life and reliability of the OLED device are not affected in the CF and BM process.
In this embodiment, the plurality of thin film encapsulation layers 40 includes a first encapsulation layer 42 closest to the substrate 10 and a second encapsulation layer 44 located on a side of the first encapsulation layer 42 away from the substrate 10, so as to increase the tightness of the thin film encapsulation layer 40 and improve the encapsulation effect of the thin film encapsulation layer 40.
Preferably, the first encapsulation layer 42 includes an inorganic layer, and the material of the first encapsulation layer 42 is silicon oxide, silicon oxynitride, silicon nitride, or the like. The first encapsulation layer 42 may be a single layer, multiple layers, a composite layer, or the like.
Preferably, the second encapsulation layer 44 includes an organic layer, and the material of the second encapsulation layer 44 is a fibrous material, a resin material, a material for laminated multilayer boards, or the like. The second encapsulation layer 44 may be a single layer, multiple layers, a composite layer, or the like. The second encapsulation layer can play a role of planarization, and can cover particles on the display substrate 100, thereby improving the encapsulation effect.
In the present embodiment, the plurality of thin film encapsulation layers 40 further includes a third encapsulation layer 46, the third encapsulation layer 46 is located on a side of the second encapsulation layer 44 away from the substrate 10, and the third encapsulation layer 46, the first encapsulation layer 42 and the second encapsulation layer 44 together increase the tightness of the thin film encapsulation layer 40 so as to enhance the encapsulation effect of the thin film encapsulation layer 40.
Preferably, the third encapsulation layer 46 includes an inorganic layer, and the material of the third encapsulation layer 46 is silicon oxide, silicon oxynitride, silicon nitride, or the like. The third encapsulation layer 46 may be a single layer, multiple layers, a composite layer, or the like.
In this embodiment, the first photoresist layer 50 is located between the first packaging layer 42 and the second packaging layer 44, and the first photoresist layer 50 shields light, so as to reduce reflection of ambient light and avoid too fast attenuation of brightness in a large viewing angle. Alternatively, the first photoresist layer 50 may be a black matrix, so as to achieve the purpose of reducing the reflectivity. Alternatively, the first photoresist layer 50 may be a metal oxide film layer with low reflection, such as a MonbOxNy/IZO structure, for reducing the reflectivity, and further, the material may have a narrower width than the black matrix, so as to increase the light emitting angle of the display panel 100.
In this embodiment, the display panel 100 further includes a filter layer 60, where the filter layer 60 is located between the first packaging layer 42 and the second packaging layer 44, and the filter layer 60 is used to achieve the effect of reducing the efficiency of the COE technology, and also can filter light within a specific wavelength range and function as a monochromator. Further, the filter layer 60 is surrounded by the first photoresist layer 50, the front projection of the filter layer 60 on the substrate 10 covers the light emitting device 30, and the filter layer 60 is located on a side of the light emitting device 30 facing away from the substrate 10, so as to filter the emergent light of the light emitting device 30.
Further, to improve the flatness of the display device 100, the surface of the filter layer 60 away from the substrate 10 is flush with the surface of the first encapsulation layer 42 away from the substrate 10.
Preferably, the length of the filter layer 60 in the direction perpendicular to the substrate 10 may be between 1.5 micrometers and 3 micrometers.
Alternatively, if the light emitting device 30 is a light emitting device capable of emitting white light, the filter layer 60 may be a white filter layer for transmitting light of all wavelength bands. In other words, the white filter layer is transparent to visible light including red light, blue light and green light, and infrared light.
Alternatively, if the light emitting device 30 is a light emitting device capable of emitting red light, green light or blue light, the filter layer 60 may be a red filter layer, a green filter layer or a blue filter layer to transmit light within a specific wavelength band. For example, the blue filter layer may have a band range of about 440 nm to 475 nm in the center band and about 550 nm in the upper cutoff band, while the blue filter layer also allows infrared light having a band greater than 800 nm to pass through; the band range of the green filter layer can be that the central band is 520-550 nanometers, the upper and lower cut-off bands are about 620 nanometers and 460 nanometers respectively, and the green filter layer also allows infrared light with the band larger than 700 nanometers to pass through; the band range of the red filter may be a lower cutoff band of approximately 575 nanometers. Since the typical wavelength of blue light is 435 to 450 nm, the typical wavelength of green light is 492 to 577 nm, and the typical wavelength of red light is 622 to 760 nm, the blue filter layer may allow transmission of blue light and infrared light, the green filter layer may allow transmission of green light and infrared light, and the red filter layer may allow transmission of red light and infrared light.
In this embodiment, the filter layer 60 may be made of any material having a filtering effect. Alternatively, the filter layer 60 may be a color film. Alternatively, the filter layer 60 may be a DBR bandpass multilayer film. Alternatively, the filter layer 60 may be an organic material having band-like absorption, such as subphthalocyanine, tung phthalocyanine, or the like. Alternatively, the filter layer 60 may be an optical microcavity with bandpass effect.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a display panel according to another embodiment of the present application. In this embodiment, the display panel 100 further includes a second photoresist layer 70, the second photoresist layer 70 is located on a side of the plurality of thin film encapsulation layers 40 away from the substrate 10, and the second photoresist layer 70 is used for reducing the reflectivity of the display panel 100. In particular, in the present embodiment, the second photoresist layer 70 is located on a side of the second packaging layer 44 away from the substrate 10, and the second photoresist layer 70 encloses to form the second light outlet 72, so that the orthographic projection of the first light outlet 52 on the substrate 10 is located within the orthographic projection range of the second light outlet 72 on the substrate 10, so that the light emitted from the first light outlet 52 by the light emitting device 30 is not blocked.
In this embodiment, the display panel 100 further includes a touch metal layer 80, and the touch metal layer 80 can sense a touch operation of a user and convert the sensed touch operation into an electrical signal to be transmitted to the driving circuit of the substrate 10. Alternatively, the touch metal layer 80 may have a single-layer structure. Alternatively, the touch metal layer 80 may have a multi-layer structure.
The orthographic projection of the touch metal layer 80 on the substrate 10 is located in the orthographic projection range of the second photoresist layer 70 on the substrate, and part of the light filtered by the filter layer 60 is reflected on the surface of the touch metal layer 80, so that part of the light enters the second photoresist layer 70 and is absorbed by the second photoresist layer 70, the emergent rate of the reflected light of the ambient light reflected inside the display panel 100 can be reduced, and the reflectivity of the display panel is reduced.
Further, the touch metal layer 80 is located between the second photoresist layer 70 and the plurality of thin film encapsulation layers 40, and specifically, the touch metal layer 80 is located between the second photoresist layer 70 and the second encapsulation layer 44. The second photoresist layer 70 includes a groove 74 recessed toward the substrate 10, the touch metal layer 80 is located in the groove 74, and a length of the groove 74 in a direction perpendicular to the substrate 10 is smaller than a length of the second photoresist layer 70 in a direction perpendicular to the substrate 10, so that the touch metal layer 80 is disposed in the second photoresist layer 70, thereby weakening a reflectivity of the touch metal layer 80.
Further, the width of the second photoresist layer 70 is slightly larger than the width of the touch metal layer 80, so that the reflectance of the touch metal layer 80 is reduced, and the width of the second light outlet 72 is increased to the greatest extent, i.e. the outward expansion distance of the second photoresist layer 70 relative to the pixel opening 22 is increased, thereby not significantly shielding the light emitted from the large viewing angle of the light emitting device 30, and improving the problem of large viewing angle luminance attenuation and the problem of viewing angle color cast of the large-COE product.
Preferably, the difference between the width of the second photoresist layer 70 and the width of the touch metal layer 80 is less than or equal to 4 micrometers, for example, the difference between the width of the second photoresist layer 70 and the width of the touch metal layer 80 is 2 micrometers.
Alternatively, the second photoresist layer 70 may be a black matrix, so as to achieve the purpose of reducing the reflectivity. Alternatively, the second photoresist layer 70 may be a metal oxide film layer with low reflection, such as a MonbOxNy/IZO structure, for reducing the reflectivity, and further, the material may have a narrower width than the black matrix, so as to increase the light emitting angle of the display panel 100. And the material is compatible with the process of the touch metal layer 80, thereby reducing the process complexity of the display panel 100.
It should be understood that, in other embodiments, in order to simplify the structure of the display panel 100 and simplify the manufacturing process of the display panel 100, the touch metal layer 80 may be directly disposed on the side of the first photoresist layer 50 close to the substrate 10. Referring to fig. 3, fig. 3 is a schematic structural diagram of a display panel according to another embodiment of the present application. The touch metal layer 80 is located between the first photoresist layer 50 and the first packaging layer 42, the first photoresist layer 50 may be provided with a groove-shaped structure 54 recessed toward the substrate 10, the touch metal layer 80 is located in the groove-shaped structure 54, and the length of the groove-shaped structure 54 in the direction perpendicular to the substrate 10 is smaller than the length of the first photoresist layer 50 in the direction perpendicular to the substrate 10, so that the touch metal layer 80 is disposed in the first photoresist layer 50, thereby weakening the reflectivity of the touch metal layer 80.
Referring to fig. 2 again, the display panel 100 further includes a cover plate 90, the cover plate 90 is stacked on a side of the second photoresist layer 70 away from the substrate 10, and the cover plate 90 is used for protecting the display panel 100. The cover plate 90 may be made of glass, or other transparent materials may be selected.
Further, the space between the cover plate 90 and the second photoresist layer 70 and the third packaging layer 46 may be filled with an optical adhesive 110, so that the cover plate 90 is attached to the second photoresist layer 70 and the third packaging layer 46.
Fig. 4 is a schematic structural diagram of a display device according to an embodiment of the present application. As shown in fig. 4, an embodiment of the present application further provides a display device 200. It is understood that the display panel 100 may be applied to the display apparatus 200, and the display apparatus 200 may be any product or component having a display function, such as a smart phone, a tablet computer, a game device, an augmented reality (Augmented Reality, AR) device, a notebook, a desktop computing device, a wearable device, and the like. The display device 200 includes the display panel 100 according to any embodiment of the present application, and its technical principle and effect are similar, and will not be described herein.
The display device 200 according to any embodiment of the present application and the display panel 100 according to the embodiment of the present application belong to the same inventive concept, and have corresponding film layer structures and beneficial effects. Details not described in detail in the embodiment of the display device can be found in the embodiment part of the display panel 100, and are not described here again.
The basic principles of the present application have been described above in connection with specific embodiments, however, it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are merely examples and not limiting, and these advantages, benefits, effects, etc. are not to be considered as necessarily possessed by the various embodiments of the present application. Furthermore, the specific details disclosed herein are for purposes of illustration and understanding only, and are not intended to be limiting, as the application is not intended to be limited to the details disclosed herein as such.
The block diagrams of the devices, apparatuses, devices, systems referred to in this application are only illustrative examples and are not intended to require or imply that the connections, arrangements, configurations must be made in the manner shown in the block diagrams. As will be appreciated by one of skill in the art, the devices, apparatuses, devices, systems may be connected, arranged, configured in any manner. Words such as "including," "comprising," "having," and the like are words of openness and mean "including but not limited to," and are used interchangeably therewith. The terms "or" and "as used herein refer to and are used interchangeably with the term" and/or "unless the context clearly indicates otherwise. The term "such as" as used herein refers to, and is used interchangeably with, the phrase "such as, but not limited to.
It is also noted that in the apparatus, devices and methods of the present application, the components or steps may be disassembled and/or assembled. Such decomposition and/or recombination should be considered as equivalent to the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the application to the form disclosed herein. Although a number of example aspects and embodiments have been discussed above, a person of ordinary skill in the art will recognize certain variations, modifications, alterations, additions, and subcombinations thereof.
Claims (10)
1. A display panel, comprising:
a substrate;
a pixel defining layer disposed on the substrate; the pixel defining layer encloses to form a pixel opening;
a light emitting device located in the pixel opening;
a plurality of thin film encapsulation layers stacked on a side of the light emitting device and the pixel defining layer away from the substrate; and
the first light resistance layer is arranged between the adjacent film packaging layers, a first light outlet is formed by surrounding the first light resistance layer, and the orthographic projection of the pixel opening on the substrate is positioned in the orthographic projection range of the first light outlet on the substrate.
2. The display panel of claim 1, further comprising a filter layer surrounded by the first photoresist layer; the orthographic projection of the filter layer on the substrate covers the light emitting device.
3. The display panel of claim 2, wherein the plurality of thin film encapsulation layers includes a first encapsulation layer closest to the substrate and a second encapsulation layer on a side of the first encapsulation layer remote from the substrate, the first photoresist layer and the filter layer being both located between the first encapsulation layer and the second encapsulation layer.
4. A display panel according to claim 3, wherein the surface of the filter layer remote from the substrate is flush with the surface of the first encapsulation layer remote from the substrate.
5. The display panel of any one of claims 1-4, further comprising a second photoresist layer on a side of the plurality of thin film encapsulation layers remote from the substrate; the second light resistance layer encloses and closes and forms the second light outlet, the orthographic projection of first light outlet on the base plate is located the second light outlet is in the orthographic projection scope on the base plate.
6. The display panel of claim 5, further comprising a touch metal layer between the second photoresist layer and the plurality of thin film encapsulation layers, wherein an orthographic projection of the touch metal layer on the substrate is within an orthographic projection range of the second photoresist layer on the substrate.
7. The display panel of claim 6, wherein the second photoresist layer comprises a groove recessed toward the substrate, and the touch metal layer is positioned in the groove.
8. The display panel of claim 7, wherein a difference between a width of the second photoresist layer and a width of the touch metal layer is less than or equal to 4 micrometers.
9. The display panel of claim 5, further comprising a cover plate overlying the second photoresist layer on a side thereof remote from the substrate.
10. A display device comprising the display panel of any one of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311526406.9A CN117279458A (en) | 2023-11-16 | 2023-11-16 | Display panel and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311526406.9A CN117279458A (en) | 2023-11-16 | 2023-11-16 | Display panel and display device |
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| CN117279458A true CN117279458A (en) | 2023-12-22 |
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