CN117276268A - Power module for half-bridge circuits with scalable architecture and improved layout - Google Patents
Power module for half-bridge circuits with scalable architecture and improved layout Download PDFInfo
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- CN117276268A CN117276268A CN202310736915.8A CN202310736915A CN117276268A CN 117276268 A CN117276268 A CN 117276268A CN 202310736915 A CN202310736915 A CN 202310736915A CN 117276268 A CN117276268 A CN 117276268A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
Abstract
The present disclosure relates to a power module for a half-bridge circuit with a scalable architecture and improved layout. A power module includes a support, a first control contact area on the support, a second control contact area on the support, a first electronic power device, a second electronic power device, a first clip, a second clip, a third clip, and a package embedded in the support, the first and second electronic power devices, and partially embedded in the first, second, and third clips. The first electronic power device has a first conductive pad electrically coupled to the first clamp, a second conductive pad electrically coupled to the third clamp, and a control pad coupled to the first control contact region. The second electronic power device has a first conductive pad electrically coupled to the third clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the second control contact region.
Description
Technical Field
The present disclosure relates to power modules with scalable architecture and improved layout.
Background
In particular, the present power module implements a half-bridge topology and can be used in inverters, rectifiers, static phase compensators, driving devices for motors in the automotive field, driving devices for general electric transportation devices, industrial or household driving devices (for example in large "white" industrial devices, in large household appliances such as washing machines, etc.), and other applications.
The modules are typically encapsulated in an encapsulant of insulating material, such as molded epoxy, or made using gel encapsulation techniques, wherein a plastic case is filled with insulating gel and encapsulates the components. In both cases, the package has a generally parallelepiped shape with two major (top and bottom) surfaces and four smaller area side surfaces with leads protruding therefrom for electrical coupling. Other signal leads may also extend from the top surface.
A power module having a half-bridge topology includes a plurality of (at least two) integrated electronic devices disposed on a patterned metal and/or ceramic substrate. The substrates are typically connected and supported by a conductive mask, called a leadframe, which is obtained from a planar sheet of conductive material that can also form the leads of the power module.
This requires considerable layout complexity to avoid parasitic components, typically parasitic inductances, and precise design to ensure gap isolation distances ("gaps and creepage distances") and not allow for efficient use of the available space.
In addition, the overall size of the power module cannot be arbitrarily reduced due to the need to maintain the gap distance.
Furthermore, it is not easy to modify and adjust the type of external leads and their connection to external connection elements according to a specific design.
Disclosure of Invention
One embodiment of the present disclosure provides a power module with a half-bridge topology that overcomes some of the disadvantages of the prior art.
In one embodiment, the power module includes a support, a first control contact area on the support, and a second control contact area on the support. The power module includes a first electronic power device having a first major face and a second major face, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face. The power module includes a second electronic power device having a first major face and a second major face, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face. The power module includes a first clamp, a second clamp, and a third clamp. The power module includes a package embedded in the support, the first and second electronic power devices, and partially embedded in the first, second, and third fixtures. The first electronic power device has a first conductive pad electrically coupled to a first clamp; the second conductive pad is electrically coupled to the third clamp and the control pad is coupled to the first control contact region. The second electronic power device has a first conductive pad electrically coupled to the third clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the second control contact region. The first and second electronic power devices form a half-bridge circuit.
In one embodiment, a method includes: electrically coupling a first conductive pad of a first electronic power device to a first clamp coupled to a support having a first contact area and a second contact area; electrically coupling a second conductive pad of the first electronic device to a second clamp coupled to the support; and coupling a control pad of the first electronic device to the first control contact region. The method includes electrically coupling a first conductive pad of a second electronic power device to a second clamp, electrically coupling a second conductive pad of the second electronic power device to a third clamp coupled to the support, and coupling a control pad of the second electronic power device to a second control contact region, wherein the first and second electronic power devices form a half-bridge circuit.
In one embodiment, a power module includes a support including a first clamp, a second clamp, a third clamp, a first contact region, and a second contact region, and a half-bridge circuit. The half-bridge circuit includes a first electronic device having a first conductive pad coupled to a first clamp, a second conductive pad electrically coupled to a second clamp, and a control pad coupled to a first control contact region. The half-bridge circuit includes a second electronic device having a first conductive pad electrically coupled to the second clamp, a second conductive pad electrically coupled to the third clamp, and a control pad of the second electronic device coupled to the second control contact region.
Drawings
For a better understanding of the present disclosure, some embodiments thereof will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:
fig. 1 is an equivalent circuit diagram of a half-bridge circuit that may be obtained with the present power module, according to one embodiment.
Fig. 2 is a top view of an embodiment of the present power module according to one embodiment, including four power devices packaged in a package.
Fig. 3 is a bottom perspective view of the power module of fig. 2, according to one embodiment.
Fig. 4 is a top perspective view of the power module of fig. 2 without a package according to one embodiment.
Fig. 5 is a top view of the power module of fig. 2 without a package according to one embodiment.
Fig. 6 is a top view of the power module of fig. 2 without the attachment clip of fig. 2, according to one embodiment.
Fig. 7 is a top view of a substrate of the power module of fig. 2 with a dashed line power device, according to one embodiment.
Fig. 8-10 are top views of a connection clip for use in the power module of fig. 2, according to one embodiment.
Fig. 11A-11D illustrate possible configurations of a portion of a substrate in the case where a half-bridge circuit includes one to eight power devices for each switch of the half-bridge circuit, according to one embodiment.
Fig. 12A and 12B are top views of other different configurations of the present power module featuring three devices and four electronic power devices for each switch of a half-bridge circuit, respectively, according to one embodiment.
Fig. 13 is a top view of yet another possible configuration of the present power module according to one embodiment.
Fig. 14 is a top view of a substrate of the power module of fig. 13 with a dashed line power device, according to one embodiment.
Fig. 15 is a top view of other connection clips used in the power module of fig. 2 according to one embodiment.
Fig. 16 is a top view of an additional attachment clip for use in the power module of fig. 2, according to one embodiment.
The following description refers to the arrangement shown; thus, expressions such as "upper", "lower", "top", "bottom", "right", "left" relate to the figures and are not intended to be limiting.
Detailed Description
Fig. 1 shows a circuit diagram of a half-bridge circuit 1 implemented by the power module described below with reference to fig. 2-14.
The half-bridge circuit 1 of known type comprises two power MOSFET transistors 3,4 (also called top transistor 3 and bottom transistor 4), here N-channel transistors, connected in series.
The top and bottom transistors 3,4 may be of any type, such as charge balance transistors (also referred to as "superjunction" transistors), silicon carbide vertical power MOSFET transistors, gallium nitride (GaN) planar power MOSFET transistors or other three terminal (source, drain, gate) power devices.
The half-bridge circuit 1 has a first terminal 10, a second terminal 11, a third terminal 12, a fourth terminal 13 and a fifth terminal 14.
The first terminal 10 of the half-bridge circuit 1 is coupled to the drain terminal of the top transistor 3; a second terminal 11 of the half-bridge circuit 1 is coupled to the gate terminal of the top transistor 3; the third terminal 12 of the half-bridge circuit 1 is coupled to the source terminal of the top transistor 3 and to the drain terminal of the bottom transistor 4; a fourth terminal 13 of the half-bridge circuit 1 is coupled to the gate terminal of the bottom transistor 4; the fifth terminal 14 is coupled to the source terminal of the bottom transistor 4.
An embodiment of a power module 2 implementing a half-bridge circuit 1 is shown in fig. 2-14 and described below.
In particular, fig. 2-10 show a first embodiment of the power module 2.
Here, the power module 2 comprises a package 9 of insulating material (e.g. resin) of generally parallelepiped shape, having four side surfaces 5, a first main surface 6 and a second main surface 7 (fig. 3).
The package 9 may be molded or manufactured using a gel encapsulation technique in which a plastic box is filled with an insulating gel and has protruding leads, insulating the gel encapsulating components.
Hereinafter, the side surface 5 is also referred to as a first side surface 5A, where understanding is facilitated; a second side surface 5B opposite to the first side surface 5A, a third side surface 5C adjacent to (adjacent to) and abutting against the first and second side surfaces 5A, 5B; and a fourth side surface 5D opposite to the third side surface 5C.
In fig. 3, the second main surface 7 comprises heat dissipation areas 8, for example metal areas embedded during molding of the package 7.
The first, second and third power pins 15-17 here protrude from the two opposite side surfaces 5 and are part of three metal strips (also referred to as first, second and third clamps 20, 21, 22 in the following) which couple the first terminal 10, the fifth terminal 14 and the third terminal 12, respectively, of the half-bridge circuit 1 of fig. 1 to the outside in the embodiment of fig. 4-10, as described in detail below.
In particular, here, the first and second power pins 15, 16 protrude from the first side surface 5A and are generally intended to receive a power supply potential (dc+, DC-); the third power pin 17 protrudes from the second side surface 5B and is typically used for connection to a load (not shown).
The first terminal 10, the third terminal 12 and the fifth terminal 14 (and the second and fourth terminals 11, 13) of the half-bridge circuit 1 of fig. 1 are also coupled to the outside via signal connections 25, as explained in detail below.
The power module 2 further comprises a substrate 27, and an electronic power device 28 is connected to the substrate 27. The electronic power device 28 may be soldered or sintered (powder sintered).
In the embodiment of fig. 4-10, the electronic power devices 28 are four, identified as first, second, third and fourth devices 28.1, 28.2, 28.3 and 28.4 where useful.
In detail, here, the electronic power devices 28 are arranged side by side, two by two in a regular matrix, and precisely, in the top view of fig. 6, the first and third devices 28.1, 28.3 are arranged side by side on the left half of the substrate 27 and realize the top transistor 3; the second and fourth devices 28.2, 28.4 are arranged on the right half of the substrate 27 and implement the bottom transistor 4.
The electronic power device 28 is of the type having a drain pad 30 (forming a first conductive pad and visible in fig. 6 for the first and third devices 28.1, 28.3) extending over the first main face; source pads 31 (forming second conductive pads and visible to the second and fourth devices 28.2, 28.4) extend on a second major face opposite the first major face; and a gate pad 32 (forming a control pad and visible to the second and fourth devices 28.2, 28.4) also extends on the second major face.
The gate pad 32 of each electronic power device 28 is disposed near one of the four corners of the respective device 28.
As is evident from the above and shown with dashed lines in fig. 7, the electronic power devices 28 are arranged to be flipped over each other about the middle vertical axis (a in fig. 6 and 7) of the power module 2, i.e. the first and third devices 28.1, 28.3 are arranged with the source and gate pads 31, 32 facing the substrate 27 and the drain pad 30 facing in opposite directions; the second and fourth devices 28.2, 28.4 are arranged with the drain pad 30 facing the substrate 27 and the source and gate pads 31, 32 facing in opposite directions.
Furthermore, the electronic power devices 28 are symmetrically arranged with respect to an intermediate horizontal axis (B in fig. 6 and 7) separating the first device 28.1 from the third device 28.3 (and the second device 28.2 from the fourth device 28.4).
Here, the gate pads 32 of the two power devices 28 forming the top transistor 3 (28.1 and 28.3) or the bottom transistor 4 (28.2 and 28.4) face each other and are arranged close to the middle horizontal axis B, facing the periphery of the substrate 27, for a simple connection thereof, as explained in detail below.
The substrate 27 is used for support and electrical coupling of the electronic power device 28 and is formed here by a plurality of layers, for example a DBC (direct bonded copper) substrate or an AMB (active metal brazing) substrate. For example, the substrate 27 (fig. 4) may comprise a first conductive layer, typically made of a metal such as copper, which forms the heat dissipation area 8 and is therefore denoted with the same reference numerals (fig. 3 and 4); an insulating interlayer 35, for example of ceramic, superimposed on the heat dissipation area 8; and a second conductive layer 36, typically made of a metal such as copper, which is superimposed on the intermediate layer 35.
The second conductive layer 36, the layout of which is visible in fig. 6 and 7, is specifically patterned and forms a plurality of contact areas 36A-36G electrically insulated from each other by separation lines 37, for example obtained by removing the material of the second conductive layer 36 over its entire thickness.
In detail, the contact regions 36A-36G may comprise a main region 36A, which main region 36A is located substantially centrally, (partly) under the source pads 31 of the first and third devices 28.1, 28.3 and in direct contact with the drain pads 30 of the second and fourth devices 28.2, 28.4; a first gate contact region 36B which is (partially) located under and in direct contact with the gate pad 32 of the first and third devices 28.1, 28.3, as shown in dashed lines in fig. 7; a second gate contact region 36C disposed at and near the periphery of the gate pad 32 of the second and fourth devices 28.2, 28.4; a drain contact region 36D disposed at the periphery of the power module 2 transverse to one of the first and third devices 28.1, 28.3 (side-by-side with the first device 28.1 in fig. 6) and electrically coupled to the drain pads 30 of the first and third devices 28.1, 28.3 by the first clip 20, as described in more detail below; a source contact region 36E disposed at the periphery of the power module 2 transverse to one of the second and fourth devices 28.2, 28.4 (side by side with the second device 28.2 in fig. 6) and electrically coupled to the source pads 31 of the second and fourth devices 28.2, 28.4 by the second clip 21, as described in more detail below; and a first thermal contact area 36F and a second thermal contact area 36G, said first thermal contact area 36F and second thermal contact area 36G being arranged at the periphery of the power module 2, here close to the third means 28.3 and fourth means 28.4.
The wire 38 extends between the gate pad 32 of the second and fourth devices 28.2, 28.4 and the second gate contact region 36C soldered at the end.
As discussed in detail below and clearly seen in fig. 4, the two side portions of the main area 36A and the contact areas 36B-36G are arranged near the periphery of the substrate 27 and near the periphery of the third and fourth side surfaces 5c,5d of the package 9 (fig. 3) and are coupled to the outside by signal connections 25.
Returning to fig. 4, 5, as shown, the first and second clamps 20, 21 extend over and directly contact the electronic power device 28.
In detail, in the power module 2 shown here, the first clamp 20 (see also fig. 8) has a substantially elongated shape, which has a main portion 20A.
The main portion 20A of the first clip 20 extends over and is in direct electrical contact with the drain pads 30 (fig. 6) of the first and third devices 28.1, 28.3.
The first clip 20 also has a protrusion 20B (fig. 7) extending laterally relative to the main portion 20A at the level of the drain contact region 36D and in direct electrical contact with the latter.
The first clamp 20 here has a wing 20C extending laterally from one end of its own main portion 20A. The wing 20C of the first clamp 20 is here arranged below and has the same shape as the corresponding wing of the second clamp 21 (described below) and is therefore not visible in fig. 5.
The connection portion 20D extends between the wing 20C of the first clamp 20 and the first power pin 15.
The first clamp 20 (see in particular fig. 4) has a three-dimensional shape which allows the first clamp 20 to be in direct electrical contact with the drain pad 30 and the drain contact region 36D (fig. 6, 7) of the first and third devices 28.1, 28.3, thereby maintaining a suitable distance from the second clamp 21 and the contact region 36A electrically separated therefrom.
The second clamp 21 (see also fig. 9) also has a substantially elongated shape with a corresponding main portion 21A extending transversely to the main portion 20A of the first clamp 20.
The main portion 21A of the second clip 21 extends over and is in direct electrical contact with the source pads 31 (fig. 6) of the second and fourth devices 28.2, 28.4.
The second clip 21 also has its own protrusion 21B extending laterally with respect to the corresponding main portion 21A at the level of the source contact region 36E (fig. 7), and is in direct electrical contact with the latter.
As described above, the second jig 21 here has its own wing portion 21C extending laterally with respect to the corresponding main portion 21A near its end portion. As already mentioned, the wing 21C of the second clamp 21 here overlaps and coincides with the wing 20B of the first clamp 20.
The connection portion 21D extends between its own wing 21C and the second power pin 16 above the connection portion 20D of the first clamp 20.
Furthermore, the power pins 15, 16 also partially overlap, thereby reducing the inductance of the power module 2.
As shown in fig. 3, the overlapping portions of the first and second power pins 15, 16 are surrounded by a protruding portion 4A of the package 9, which protruding portion 4A also extends between these overlapping portions to ensure electrical insulation thereof. Furthermore, in a non-visible manner, the material of the package 9 also extends between the wings 20B and 21B of the first and second clamps 20, 21, electrically insulating them from each other.
As shown in particular in fig. 4, the second clip 21 also has a three-dimensional shape, which allows the second clip 21 to be in direct electrical contact with the source pad 31 of the second and fourth devices 28.2, 28.4, thereby bypassing the gate pad 32, and in direct electrical contact with the source contact region 36E (fig. 6, 7), and maintaining a suitable distance from the first clip 20 and from the electrically separate contact region 36A thereof.
In fact, the first and second clamps 20, 21 shown in fig. 8 and 9 have a substantially symmetrical planar shape with respect to the median vertical axis a (fig. 6) of the power module 2, except for the projections 20b,21 b.
The third clamp 22 (see also fig. 10) is here shorter than the first and second clamps 20, 21 and essentially comprises only two portions 22A in direct electrical contact with the main region 36A of the second conductive layer 36 and a lateral portion 22B coupling the portion 22A of the third clamp 22 to the third power pin 17.
The clips 20-22 may be sintered or soldered to the electronic power device 28 and the contact areas 36a,36d, and 36E.
It is clear that the exact geometry of the clamps 20-21 may vary greatly from that shown, as long as they allow the above-described electrical coupling.
For example, the first and second clamps 20, 21 may also overlap at least partially over a majority of the main portions 20a,21 a.
For example, fig. 15 and 16 show clamps 20, 21 having main portions 20a,21a extending along a vertical centerline of substrate 27 (along the intermediate vertical axis a of fig. 6). They also have protruding portions 20e,21e for contacting pads of the electronic power device 28, as described above.
Alternatively, only one of the main portions 20a,21a may extend centrally along the intermediate vertical axis a of fig. 6.
According to another configuration, the protrusions 20B and/or 21B may extend at least partially parallel or according to different angles relative to the respective main portions 20a,21a, as shown in fig. 16.
However, it will be apparent to those skilled in the art that the foregoing represents only a few of the myriad variations of shapes and configurations of the clamps 20-22.
Similar considerations apply to the contact regions 36A-36G, and the shape and location of the contact regions 36A-36G may vary significantly from what has been described and illustrated, also in combination with the shape and arrangement of the clamps 20-22.
The signal connection 25 may be made as described in italian patent application 102022000006617 entitled "Power module having leadframe-less signal connector, specific for automotive applications, and assembling method thereof" filed in the name of applicant at 4/2022.
In particular, in fig. 4, the signal connections 25 are here each formed by a pillar portion 25A and an outer portion 25B, the pillar portion 25A being directly attached to the contact areas 36A-36G of the second conductive layer 36 and ending substantially horizontally with the top surface 6 of the package 9, the outer portion 25B protruding from the package 9 in succession with the pillar portion 25A (fig. 3).
The post portion 25A may be attached to the contact areas 36A-36G by soldering, with or without a filler material (soldering, welding and sintering), or with conductive glue.
The outer portion 25B is a signal pin and may be integral with and welded or assembled to the post portion 25A and may have different shapes depending on the type of connection considered.
In the power module 2 of fig. 2-10 eight signal connections 25 are provided, namely (see fig. 5): a first signal connection 25.1 connected to the drain contact region 36D and then coupled to the drain pad 30 of the first and third devices 28.1, 28.3 by the bump 20B of the first clip 20; a second signal connection 25.2 attached to the first gate contact region 36B and coupled to the gate pad 32 of the first and third devices 28.1, 28.3 via the latter to provide a first switching signal of the half-bridge circuit 1 of fig. 1; a third signal connection 25.3 connected to a peripheral portion of the main region 36A and then coupled to the source pad 31 of the first and third devices 28.1, 28.3 and the drain pad 30 of the second and fourth devices 28.2, 28.4; a fourth signal connection 25.4 attached to the first thermal contact area 36F; a fifth signal connection 25.5 attached to the second thermal contact area 36G; a sixth signal connection 25.6 attached to and coupled with another peripheral portion of the main area 36A opposite the third signal connection 25.3; a seventh signal connection 25.7 attached to the second gate contact region 36C and coupled to the gate pads 32 of the second and fourth devices 28.2, 28.4 by wires 38 to provide a second switching signal of the half-bridge circuit 1 of fig. 1; and an eighth signal connection 25.8 attached to the source contact region 36E and coupled to the source pads 31 of the second and fourth devices 28.2, 28.4 by the protrusions 21B of the second clip 21.
The signal connections 25.2, 25.3, 25.6 and 25.8 represent additional connections with respect to the power pins 15-17 and are used for controlling the power module 2 during operation of the power module 2.
The temperature sensor 40 is here attached to the substrate 27. For example, the temperature sensor 40 is of the NTC type with an SMD package and is connected to the sixth and seventh signal connections 25.6, 25.7 by means of first and second thermal contact areas 36f,36 g.
The power module 2 may be adapted to half-bridge circuits formed by different numbers of electronic power devices 28 with a simple adaptation of the layout of the second conductive layer 36 and the clamps 20-21.
For example, fig. 11A-11D show possible layouts of portions of the top transistor 3 of fig. 1 in case of being implemented by one, two, four and eight electronic power devices 28. The corresponding layout of the portion of the bottom transistor 4 of the half-bridge circuit 1 of fig. 1 can be obtained similarly to fig. 4-7.
Fig. 11A relates to the implementation of the top transistor 3 of fig. 1 by a single electronic power device 28. As shown in fig. 7, this arrangement is not substantially different from the configuration of half of the first gate contact region 36B (with respect to the third device 28.3). Accordingly, the respective regions are denoted by the same reference numerals. In particular, here, the first gate contact region 36B is L-shaped.
Fig. 11B relates to the implementation of the top transistor 3 of fig. 1 by means of two electronic power devices 28. This arrangement corresponds generally to the configuration of the first gate contact region 36B of fig. 7 and in particular relates to the first and third devices 28.1, 28.3. Accordingly, the respective regions are denoted by the same reference numerals. In particular, here, the first gate contact region 36B is T-shaped.
Fig. 11C relates to the implementation of the top transistor 3 of fig. 1 by four electronic power devices 28. This arrangement is approximately doubled (dubbing) of the structure of fig. 11B after being rotated 90 ° and flipped, except for the branches of the first gate contact region 36B, which are now formed by the square central region and the stem 36B1 joining it to the periphery of the substrate 37. However, for clarity of illustration, the various regions are again identified by the same reference numerals.
Fig. 11D relates to the implementation of the top transistor 3 of fig. 1 by eight electronic power devices 28. After being rotated 90 ° and flipped, this arrangement approximately doubles the structure of fig. 11C, and the first gate contact region 36B now comprises two square-shaped central regions 36B2 connected by a connecting portion 36B 3. The first gate contact region 36B may be coupled to the periphery of the substrate 37 by a wire or clip, or directly connected to the outside by a signal connection similar to the signal connection 25 of fig. 4.
For the rest, also here, the individual regions are still denoted by the same reference numerals.
Fig. 12A shows a possible configuration of the power module 2 when each power MOSFET transistor 2,3 of the half-bridge circuit 1 of fig. 1 is formed by three power devices 28.
In fig. 12A, the same reference numerals as in fig. 2-10 are used for ease of understanding; the further power devices 28 with respect to the previous figures are here denoted as fifth devices 28.5 (forming part of the top transistor 3) and sixth devices 28.6 (forming part of the bottom transistor 4).
The fifth and sixth means 28.5, 28.6 are here arranged and oriented adjacent to the second and fourth means 28.3, 28.4, respectively.
Furthermore, here, the three devices 28.1, 28.3, 28.5 forming the top transistor 3 of the half-bridge circuit 1 of fig. 1 are arranged in alignment with each other in the first half (left in fig. 12A), and the three devices 28.2, 28.4, 28.6 forming the bottom transistor 4 of the half-bridge circuit 1 of fig. 1 are arranged in alignment with each other in the second half (right in fig. 12A).
Furthermore, the first gate contact region 36B has a further branch for connecting the gate pad 32 (visible in phantom in fig. 12A) of the fifth device 28.5; the shape of the contact region 36 and the clamps 20-22 are slightly modified to allow contact of the fifth and sixth devices 28.5, 28.6 in a manner readily understood by those skilled in the art.
Fig. 12B shows a possible configuration of the power module 2 when each power MOSFET transistor 2,3 of the half-bridge circuit 1 of fig. 1 is formed by four power devices 28, also denoted as power device 28 (3) when referring to the top transistor 3 of the half-bridge circuit 1 of fig. 1 and as power device 28 (4) when referring to the bottom transistor 4.
The four devices 28 (3), 28 (4) of each power MOSFET transistor 3,4 (fig. 1) are arranged substantially as shown in fig. 11C except for a first gate contact region 36B, which first gate contact region 36B doubles and flips similarly to the first gate contact region 36B of fig. 11B and is arranged in the center of the group of four devices 28 (3) forming the top transistor 3 of the half bridge circuit 1 of fig. 1.
On the other hand, the second gate contact region 36C has any shape, for example rectangular, here arranged in the center of the group of four devices 28 (4) forming the bottom transistor 4 of the half-bridge circuit 1 of fig. 1.
Furthermore, here, the signal connection 25 is arranged centrally with respect to each set of four devices 28 and no longer close to the side surfaces 5c,5d of the substrate 27, as shown in fig. 2-12A.
Fig. 13 and 14 illustrate another embodiment of a power module (here indicated at 102) in which the location of the power MOSFET transistor is inverted relative to fig. 4-12B. Accordingly, in fig. 13 and 14, the same components as those of fig. 4 to 12B are denoted by reference numerals increased by 100.
Here, the first and third devices (denoted 128.1, 128.3 and forming the top transistor 3 of the half-bridge circuit 1 of fig. 1) are arranged in the right half of fig. 13, 14, and the second and fourth devices (denoted 128.2, 128.4 and forming the bottom transistor 4 of the half-bridge circuit 1 of fig. 1) are arranged in the left half of fig. 13, 14.
In this case, the main region 36A of fig. 4 to 7 is divided into two parts (first and second half regions 136A1, 136A 2) on the right and left sides of the intermediate vertical axis a in fig. 13, 14, respectively.
Thus, in the power module 102, the first and third devices 128.1, 128.3 are attached to the first half area 136A1 with their own first main face with the drain pad 30; the second and fourth devices 128.2, 128.4 are attached to the second half-area 136A2 with their own second main faces with source 31 and gate 32 pads.
Further, here, the first clamp (indicated by 120) is shorter and attached to the second half-area 136A2 (fig. 3) near the first side surface 5A of the package 9; the second clamp (indicated by 121) is also shorter and is attached to the first half area 136A1, also in the vicinity of the first side surface 5A of the package 9 (fig. 14); the third clip (indicated by 122) is longer relative to fig. 4-9 and has a substantially elongate shape which is in direct electrical contact with the source pads 31 (fig. 14) of the first and third devices 28.1, 28.3 and the drain pads 30 of the second and fourth devices 28.2, 28.4.
Here, the first and second clamps 120, 121 may have a planar shape precisely symmetrical with respect to the middle vertical axis a (fig. 14).
For the rest, the power module 102 may be provided in a completely similar manner to the power module 2; in particular, the layout of the contact areas (denoted here as 136B-136G, except 136A1, 136 A2) may have any of the shapes shown in fig. 7, 11A-12B, depending also on the number of electronic power devices 128 forming the power MOSFET transistors 3, 4.
The power module described herein has many advantages.
In particular, the second conductive layer 36 of the substrate 27 has a very simple layout, which allows a symmetrical arrangement of the electronic power devices 28 without connections crossing each other, with short gate, source and drain connection paths, thereby reducing the size and parasitic inductance. It has a low form factor, which allows for a high power density, providing a high reliability of the electrical coupling.
In this way the present power module has dimensions comparable to those of the half-bridge circuits currently available, wherein each power MOSFET transistor 2,3 is formed by a single electric power device 28.
The same substrate 27 can be used for different sized electronic power devices 28, providing high scalability, maintaining a pin-out configuration, allowing plug-and-play applications of the same family of modules.
In particular, the present module allows for vertical scalability as shown in fig. 12A and horizontal scalability as shown in fig. 12B.
The power module 2, 102 allows reducing the bonding wires or eliminating them entirely if the wires 38 are replaced by small clips soldered between the gate pads 32 and the second gate contact areas 36C.
Furthermore, it allows symmetrical current paths for the top and bottom transistors 2,3, thus equalizing the switching speed of the electronic power device 28. Last but not least, the present power module has a short and simple bill of materials (BOM) and can therefore be manufactured at low cost.
Finally, it is clear that modifications and variations may be made to the power module described and illustrated herein without departing from the scope of the present disclosure, as defined in the appended claims. For example, the different embodiments described may be combined to provide further solutions.
Furthermore, the layout of the connections and clamps may be readily adapted to any number of electronic power devices 28 forming the power MOSFET transistors 2, 3.
The shape of the signal connection 25 may vary, in particular standard pins may be used.
The present power module may be coupled to a single-sided or double-sided cooling system.
The half-bridge structure may be doubled or doubled if two or more phases are required.
In one embodiment, the power module (2) may be summarized as comprising: a support (35); a first control contact area (36B; 136 c) on the support; a second control contact area (36C; 136 b) on the support; the first electronic power device (28.1; 128.1) has a first main face and a second main face, a first conductive pad (30) on the first main face, a second conductive pad (31) on the second main face and a control pad (32) on the second main face; the second electronic power device (28.2; 128.2) has a first main face and a second main face, a first conductive pad (30) on the first main face, a second conductive pad (31) on the second main face and a control pad (32) on the second main face; a first clamp (20; 121); a second clamp (21; 120); a third clamp (22; 122); and a package (9) embedding the support, the first electronic power device and the second electronic power device, and partially embedding the first clip, the second clip and the third clip. The first electronic power device (28.1; 128.1) has a first conductive bond pad (30) electrically coupled to the first fixture (20; 121). The second conductive pad (31) is electrically coupled to the first clamp, and the control pad (32) is coupled to the first control contact region (36B; 136C). The second electronic power device has a first conductive pad (30) electrically coupled to the third clamp (22; 122) with the control pad (32) coupled to the first control contact region (36B; 136C). A second electronic power device (28.2; 128.2) has a first conductive pad electrically coupled to the third clamp (22; 122) and a second conductive pad (31) electrically coupled to the second clamp (21; 120), and the control pad (32) is coupled to the second control contact region (36C; 136 b). The first and second electronic power devices form a half-bridge circuit (1).
The first electronic power component (28.1; 128.1) can be tilted relative to the second electronic power component (28.2; 128.2) about a central axis of support (A) extending between the first and second electronic power components.
The power module may further comprise a third electronic power device (28.3; 128.3) and a fourth electronic power device (28.4; 128.4). The third electronic power device (28.3; 128.3) has a first main face and a second main face, a first conductive pad (30) on the first main face, a second conductive pad (31) on the second main face and a control pad (32) on the second main face. The fourth electronic power device (28.4; 128.4) has a first main face and a second main face, a first conductive pad (30) on the first main face, a second conductive pad (31) on the second main face and a control pad (32) on the second main face. A third electronic power device (28.3; 128.3) electrically couples the second conductive pad (31) to the third clamp (22; 122), the first conductive pad (30) electrically couples to the first clamp (20; 121), and the control pad couples to the first control contact region (36B; 136C). A fourth electronic power device (28.4; 128.4) has a first conductive pad (30) electrically coupled to the third clamp (22; 122), a second conductive pad (31) electrically coupled to the second clamp (21; 120), and a control pad (32) coupled to the second control contact region (36C; 136 b).
The third electronic power device (28.3; 128.3) can be tilted relative to the fourth electronic power device (28.4; 128.4) about the central axis (A) of the support.
The power module may further include a metallic electrical conductor (38) coupling the control pad (32) of the second electronic power device (28.2) to the second control contact region (36C).
The power module may also include a metallic electrical conductor (38) coupling the control pad (32) of the first electronic power device (128.1) to the first control contact region (136C).
The first and second clamps (20, 21;121, 120) may form respective power pins (15, 16) protruding from a first side (5A) of the package (4), and the third clamp (22; 122) has respective power pins (17) protruding from a second side (5B) of the package (4) opposite the first side (5A).
The first and second clamps (20, 21;121; 120) may have portions (20C, 21C,20D, 21D) that overlap each other and are electrically insulated from each other by the encapsulation (4).
The power module may further include a first gate connection element (25.2) coupled to the first control contact region (36B) and a second gate connection element (25.7) coupled to the second control contact region (36C). The first and second gate connection elements (25.2, 25.7) extend transversely to the support (35) and have respective ends (25B) protruding from the main surface (6) of the package (9).
The first and second sides of the package may extend transversely to the main surface (6) of the package (9).
The power module may further include a contact region (36A), the contact region (36A) extending on the support (35) and electrically coupled to the third clamp. The first electronic power device (28.1) may have a second major face facing the support and a second conductive pad (31) electrically coupled to the contact region. The second electronic power device (28.2) may have a first major face facing the support and a first conductive pad (30) electrically coupled to the contact region. The first clamp (20) may cover a first major face of the first electronic power device (28.1) and may be coupled to a first conductive pad (30) of the first electronic power device. The second clamp (21) covers the second main face of the second electronic power device (28.2) and may be coupled to a second conductive pad (31) of the second electronic power device.
The power module may also include a first conductive contact area (136A) electrically coupled to the support (35) of the first clamp (121) and a second conductive contact area (136B) electrically coupled to the support (35) of the second clamp (120). The first electronic power device (128.1) may have a first major face facing the support, and the first conductive pad (30) may be electrically coupled to the first conductive contact region (136A). The second electronic power device (128.2) may have a second major face facing the support (35), and the second conductive pad (31) may be electrically coupled to the second conductive contact region (136B). The third clamp (122) may have a second major face of the first electronic power device (128.1) and a first major face of the second electronic power device (128.2), and may be coupled to the second conductive pad (31) of the first electronic power device and the first conductive pad (30) of the second electronic power device (128.2).
The power module may further comprise a first auxiliary connection element (25.1) coupled to the first clamp (20) by a first auxiliary contact area (36D) on the support (35), a second auxiliary connection element (25.8) coupled to the second clamp (21) by a second auxiliary contact area (36E) on the support (35), and a third auxiliary connection element (25.3, 25.6) coupled to the third clamp (22) by the contact area (36A) on the support (35). The first, second and third auxiliary connection elements extend transversely to the support (35) and have corresponding portions protruding from the main surface (6) of the package (9).
The support (35), the first control contact area (36B; 136C) and the second control contact area (36C; 136B) may be part of a multilayer substrate (27) comprising a first conductive layer (36) forming the first control contact area (36B) and the second control contact area (36C), a second conductive layer (8) forming a heat dissipating element facing the outer surface of the power module (2), and an insulating layer (35) interposed between the first and second conductive layers and forming the support (35).
The first and second electronic power devices (128.1, 128.2) may be power MOSFETs.
These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the present disclosure.
Claims (20)
1. A power module, comprising:
a support;
a first control contact area on the support;
a second control contact area on the support;
a first electronic power device having first and second major faces, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face;
a second electronic power device having first and second major faces, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face;
a first clamp;
a second clamp;
a third clamp; and
a package embedded in the support, the first electronic power device, and the second electronic power device, and partially embedded in the first jig, the second jig, and the third jig,
Wherein the first electronic power device has a first conductive pad electrically coupled to the first clamp, the second conductive pad electrically coupled to the third clamp, and the control pad coupled to the first control contact region; and
the second electronic power device has the first conductive pad electrically coupled to the third clamp, the second conductive pad electrically coupled to the second clamp, and the control pad coupled to the second control contact region;
the first power device and the second electronic power device form a half-bridge circuit.
2. The power module of claim 1 wherein the first electronic power device is flipped relative to the second electronic power device about a central axis of support extending between the first electronic power device and the second electronic power device.
3. The power module of claim 1, further comprising a third electronic power device and a fourth electronic power device;
the third electronic power device has first and second major faces, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face;
The fourth electronic power device has first and second major faces, a first conductive pad on the first major face, a second conductive pad on the second major face, and a control pad on the second major face;
the third electronic power device has the second conductive pad electrically coupled to the third clamp, the first conductive pad electrically coupled to the first clamp, and the control pad coupled to the first control contact region; and
the fourth electronic power device has the first conductive pad electrically coupled to the third clamp, the second conductive pad electrically coupled to the second clamp, and the control pad coupled to the second control contact region.
4. A power module according to claim 3, wherein the third electronic power device is flipped about a central support axis relative to the fourth electronic power device.
5. The power module of claim 1, further comprising a metallic electrical conductor coupling the control pad of the second electronic power device to the second control contact region.
6. The power module of claim 1, further comprising a metallic electrical conductor coupling the control pad of the first electronic power device to the first control contact region.
7. The power module of claim 1, wherein the first clip and the second clip form respective power pins protruding from a first side of the package, and the third clip has respective power pins protruding from a second side of the package opposite the first side.
8. The power module of claim 7 wherein the first clip and the second clip have portions that overlie one another and are electrically insulated from one another by the package.
9. The power module of claim 1, further comprising:
a first gate connection element coupled to the first control contact region; and
a second gate connection element coupled to the second control contact region;
the first and second gate connection elements extend transverse to the support and have respective ends protruding from a major surface of the package.
10. The power module of claim 9, wherein the first and second clips form respective power pins protruding from a first side of the package, and the third clip has respective power pins protruding from a second side of the package opposite the first side, wherein the first and second sides of the package extend transverse to the major surface of the package.
11. The power module of claim 1, further comprising a contact region extending on the support and electrically coupled to the third clamp;
wherein the first electronic power device has the second major face facing the support and the second conductive pad electrically coupled to the contact region;
the second electronic power device having the first major surface facing the support, the first conductive pad being electrically coupled to the contact area;
the first clamp covers the first major surface of the first electronic power device and is coupled to the first conductive pad of the first electronic power device, and
the second clip covers the second major face of the second electronic power device and is coupled to the second conductive pad of the second electronic power device.
12. The power module of claim 1, further comprising:
a first conductive contact area on the support, the first conductive contact area electrically coupled to the first clamp; and
a second conductive contact area on the support, the second conductive contact area electrically coupled to the second clamp;
Wherein the first electronic power device has the first major surface facing the support and the first conductive pad is electrically coupled to the first conductive contact region;
the second electronic power device has the second major face facing the support and the second conductive pad is electrically coupled to the second conductive contact region;
the third clip faces the second major face of the first electronic power device and the first major face of the second electronic power device, and the third clip is coupled to the second conductive pad of the first electronic power device and the first conductive pad of the second electronic power device.
13. The power module of claim 1, further comprising:
a first auxiliary connection element coupled to the first clamp through a first auxiliary contact area on the support;
a second auxiliary connection element coupled to the second clamp through a second auxiliary contact area on the support; and
a third auxiliary connection element coupled to the third clamp through the contact area on the support,
The first, second and third auxiliary connection elements extend transversely to the support and have respective portions protruding from a main surface of the package.
14. The power module of claim 1, wherein the support, the first control contact region, and the second control contact region are part of a multilayer substrate comprising: the power module includes a first conductive layer forming the first and second control contact regions, a second conductive layer forming a heat dissipation element facing an outer surface of the power module, and an insulating layer interposed between the first and second conductive layers and forming the support.
15. The power module of claim 1, wherein the first electronic power device and the second electronic power device are power MOSFETs.
16. A method, comprising:
electrically coupling a first conductive pad of a first electronic power device to a first clamp coupled to a support having a first contact area and a second contact area;
electrically coupling a second conductive pad of the first electronic device to a second clamp, the second clamp coupled to the support;
Coupling a control pad of the first electronic device to the first control contact region;
electrically coupling a first conductive pad of a second electronic power device to the second fixture;
electrically coupling a second conductive pad of the second electronic device to a third clamp, the third clamp coupled to the support; and
and coupling a control pad of the second electronic device to the second control contact region, wherein the first electronic power device and the second electronic power device form a half-bridge circuit.
17. The method of claim 16, comprising:
encapsulating the support, the first electronic power device and the second electronic power device in an encapsulation; and
partially encapsulating the first clip, the second clip, and the third clip.
18. The method according to claim 17, wherein:
the first electronic power device has a first major face and a second major face, the first conductive pad on the first major face, the second conductive pad on the second major face, and the control pad on the second major face; and
the second electronic power device has a first major face and a second major face, the first conductive pad on the first major face, the second conductive pad on the second major face, and the control pad on the second major face.
19. A power module, comprising:
a support comprising a first clamp, a second clamp, a third clamp, a first contact region, and a second contact region; and
a half-bridge circuit comprising:
a first electronic device having a first conductive pad coupled to the first clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the first control contact region; and
a second electronic device having a first conductive pad electrically coupled to the second clamp, a second conductive pad electrically coupled to a third clamp, and a control pad of the second electronic device coupled to the second control contact region.
20. The power module of claim 19, comprising a package embedded in the support and the first and second electronic power devices and partially embedded in the first, second, and third fixtures.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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IT102022000013243 | 2022-06-22 | ||
US18/331,837 US20230420341A1 (en) | 2022-06-22 | 2023-06-08 | Power module for half-bridge circuit with scalable architecture and improved layout |
US18/331,837 | 2023-06-08 |
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CN117276268A true CN117276268A (en) | 2023-12-22 |
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CN202310736915.8A Pending CN117276268A (en) | 2022-06-22 | 2023-06-21 | Power module for half-bridge circuits with scalable architecture and improved layout |
CN202321585870.0U Active CN220731524U (en) | 2022-06-22 | 2023-06-21 | Power module |
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CN202321585870.0U Active CN220731524U (en) | 2022-06-22 | 2023-06-21 | Power module |
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