CN117270109A - Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter - Google Patents
Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter Download PDFInfo
- Publication number
- CN117270109A CN117270109A CN202311105276.1A CN202311105276A CN117270109A CN 117270109 A CN117270109 A CN 117270109A CN 202311105276 A CN202311105276 A CN 202311105276A CN 117270109 A CN117270109 A CN 117270109A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- layer
- optical fiber
- width
- deep ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 53
- 239000013307 optical fiber Substances 0.000 title claims abstract description 33
- 238000000276 deep-ultraviolet lithography Methods 0.000 title claims abstract description 29
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000010168 coupling process Methods 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 238000005253 cladding Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 18
- 238000013461 design Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000000609 electron-beam lithography Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of photon devices, and discloses a deep ultraviolet lithography integrated optical waveguide to optical fiber low-reflection mode spot converter.A first-step waveguide is a first-layer etched waveguide and comprises a waveguide subjected to second etching on the basis; the second step of slab waveguide is a second layer of etched waveguide, and the tail of the waveguide is connected with the second step of tapered waveguide along the light transmission direction; the second step of linear taper waveguide is a second layer of etched waveguide, the waveguide width is linearly narrowed from the light field transmission direction, and the tip is connected with the second step of output waveguide; the second step of linear taper waveguide is a second layer of etched waveguide, the waveguide width is linearly narrowed from the light field transmission direction, and the tip is connected with the second step of output waveguide; the second step of output waveguide is a second layer of etched waveguide, the width of which is fixed, and which extends to the end face to be coupled with the optical fiber.
Description
Technical Field
The invention belongs to the technical field of photonic devices, and particularly relates to a deep ultraviolet lithography integrated optical waveguide-to-optical fiber low-reflection mode spot converter.
Background
In practical applications of photonic integrated platforms, the packaging of optical fibers and chips typically employs end-face coupling techniques. End-face coupling has lower coupling loss than vertical grating coupling and polarization independent coupling is easier to achieve. Therefore, the current chip packaging technology commonly adopts a terminal surface coupling method.
In order to realize end-face coupling, the mainstream technology adopts a mode converter of two-layer tapered waveguides to expand the waveguide mode field on the end face, so that the mode field matching degree between the waveguide and the optical fiber is improved. This is because, as the tip size of the inverted cone waveguide is reduced, its waveguide mode field increases to better match the fiber mode field, thereby improving coupling efficiency. In the conventional etched waveguide, a slab structure is arranged below the etched waveguide, so that a two-step inverted taper waveguide is required to expand the ridge waveguide mode field. First, the first step is to reverse taper the waveguide to the same thickness as a slab structure for coupling in light in an optical fiber (or large-sized transition waveguide). The second step reverse taper waveguide then converts the mode field of the first step into a ridge waveguide and connects with the device waveguide on the chip. However, current processes for fabricating the first layer inverted cone waveguide require the use of electron beam Exposure (EBL) techniques, since their tip size is typically only 100nm to 200nm. This not only requires very high precision on the experimental equipment, but also is relatively costly. More critical is that there be an overlay bias of about 100nm when the first and second layer waveguides are fabricated using EBL. This deviation may result in significant reflection at the transition interface of the first layer inverted cone waveguide and the second layer inverted cone waveguide. For chips with stringent crosstalk requirements or for sensing, such reflection is unacceptable, and fabrication of waveguides requires, in addition to electron beam Exposure (EBL), deep ultraviolet lithography, which generally has higher throughput than electron beam lithography, making it more suitable for mass production, and since expensive electron beam equipment and complex operations are not required, deep ultraviolet lithography is generally more economical than electron beam lithography, and requires only a minimum linewidth of the fabrication of waveguides of greater than 200nm to ensure higher production yields, and therefore requires a minimum linewidth requirement for the spot-size converter of greater than 200nm, ensuring minimum loss to accomplish chip-to-fiber coupling.
The main defects and technical problems to be solved in the prior art are as follows:
high manufacturing process cost: current end-face coupling techniques rely primarily on electron beam Exposure (EBL) to fabricate inverted cone waveguides. Particularly, for the first-layer inverted tapered waveguide, it is necessary to use high-precision equipment due to its minute size, resulting in a significant increase in manufacturing cost. This high cost restricts its use in mass production.
Overlay bias problem: overlay variations of about 100nm may occur when fabricating the first and second layer waveguides. Such deviations may cause significant reflections at the interface of the waveguide, thereby adversely affecting the performance and range of applications of the device.
Crosstalk problem: for certain specific chips, such as sensor type chips, the requirements for crosstalk are stringent. Existing double-layer reverse-cone mode converters may not meet these stringent requirements, limiting their use in these particular applications.
The technical improvement direction is as follows: in order to solve the above problems, current research is focused on developing an innovative design method that can manufacture the mode converter efficiently and at low cost and ensure that overlay bias does not adversely affect performance. At the same time, this method should also be able to meet the low reflection requirements. In addition, the exploration of new coupling technologies is also a considerable direction, which can further improve the efficiency and stability of end-face coupling, thereby promoting the further development of photonic integrated platforms.
Disclosure of Invention
In view of the limitations of the prior art, particularly the interface reflection problem of the traditional double-cone-shaped spot-size converter and the high cost caused by the small linewidth of the cone-shaped waveguide, the invention aims to provide the low-reflection spot-size converter from the deep ultraviolet lithography integrated optical waveguide to the optical fiber, so as to overcome the defects of the traditional double-layer inverted cone-shaped spot-size converter.
In order to achieve the above object, the present invention provides a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter, which specifically includes: the waveguide structure comprises a first step waveguide, a second step slab waveguide, a second step tapered waveguide, a second step linear tapered waveguide and a second step output waveguide.
The first step of waveguide is a first layer of etched waveguide and comprises a waveguide after being etched for the second time on the basis.
The second step of slab waveguide is a second layer of etched waveguide, and the tail of the waveguide is connected with the second step of tapered waveguide along the light transmission direction.
The second-step tapered waveguide is a second-layer etched waveguide for mode spot conversion, the width of the waveguide is narrowed from the width of the light field transmission direction, the waveguide is shifted upwards or downwards in the direction perpendicular to the light field transmission direction, and the narrowed end of the waveguide is connected with the head end of the second-step linear tapered waveguide.
The second-step linear tapered waveguide is a second-layer etched waveguide, the waveguide width is linearly narrowed from the light field transmission direction, and the tip is connected with the second-step output waveguide.
The second step output waveguide is a second layer etched waveguide, the width of the second step output waveguide is fixed, the second step output waveguide extends to the end face and is coupled with the optical fiber.
Further, the coupling structure further includes a cladding layer.
The cladding layer covers the first step waveguide, the second step linear tapered waveguide, and the second step narrow waveguide.
Further, the cladding layer is a silicon oxide layer.
Further, the cladding layer has a thickness of 500nm to 7 μm.
Further, the device includes, from bottom to top, a substrate layer, an insulating layer, and the spot-size converter structure.
Further, the substrate layer is a silicon layer or a quartz layer, and the thickness is 200-900 mu m.
Further, the insulating layer is a silicon oxide layer with a thickness of 2-20 μm for preventing light leakage to the substrate layer.
Further, the first step waveguide has a width of 0.1 μm to 1 μm.
Further, the length of the second step taper waveguide is 50-1000 μm, the tip width is 0.5-5 μm, and the first section width is 2-15 μm.
Further, the length of the linear tapered waveguide of the second step is 0-1000 mu m, the width of the tip is 80-500 nm, and the width of the head end is 0.5-5 mu m.
Further, the width of the narrow waveguide in the second step is 80-500 nm.
Further, the width of the narrow waveguide in the second step is 80-500 nm.
Further, the first step waveguide, the second step linear tapered waveguide and the second step narrow waveguide are thin film lithium niobate, the waveguide inclination angle of the thin film lithium niobate is 60-70 degrees, the total thickness is 200-600 nm, and the etching thickness is 100-300 nm.
In the above description, the working principle of the lithium niobate platform is described by taking the lithium niobate platform as an example, but the same principle can be used for realizing the same function on other material platforms, including but not limited to a silicon nitride platform, a silicon platform and the like.
Further, the optical waveguide may be prepared by a process including, but not limited to, ICP etching, dry etching, wet etching, and femtosecond laser assisted chemical mechanical polishing.
Aiming at the technical problems in the prior art, the problems are solved, and then some technical effects with creativity are achieved.
First, the specific description is as follows:
reflection is reduced: the invention firstly aims at the problem of reflection at the interface between a first layer waveguide and a second layer waveguide in the traditional double-layer inverted cone-shaped spot-size converter, and carries out new design to reduce reflection. Low reflection means higher light energy transmission efficiency, which is critical for any optical system. Particularly in applications where crosstalk requirements are very high, such as high speed communications, precision sensing, etc., reducing reflections can significantly improve the overall performance of the system.
Optimizing polarization extinction ratio:
optimizing overlay error: overlay errors can lead to reduced performance of the integrated optical element, particularly reduced polarization extinction ratio, which can affect the performance and efficiency of the overall optical system. Thus, in order to obtain a high-performance polarizing optical element, a polarizing optical element is manufacturedIn the process, the overlay error needs to be strictly controlled ， The invention further considers the influence of overlay error on the performance of the device. Through the technical innovation, even if an overlay error exists, the device cannot be additionally lost, and the polarization extinction ratio is not affected. This is particularly critical in mass production, as it can significantly improve the yield of the product.
Waveguide design of adaptation deep ultraviolet lithography: on the premise of ensuring the nondestructive optical transmission, the invention successfully improves the minimum waveguide linewidth of the mode spot conversion from the first layer waveguide to the second layer waveguide, so that the mode spot conversion can adapt to the requirements of a deep ultraviolet photoetching machine.
Simplified process and reduced cost: the present invention successfully reduces the process complexity during manufacturing due to the technical advantages described above. The simplified process flow directly results in a reduction in production costs, making the product more competitive in the marketplace.
The application is wide: as the demand for data centers and high performance computing increases, optical interconnect technology becomes increasingly important. The spot-size converter can provide high-yield design scheme support for the fields of quantum communication and quantum computation in photon integration, microfluidic chips and biochips, optical sensors and the like.
Second, these claims describe a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection spot-size converter, which provides significant technical advances in design and fabrication processes. The following is a major technical advance of each claim:
the design of the structure of the invention enables the optical field to be effectively transmitted from the waveguide to the optical fiber without damage, and realizes the low-reflection mode spot conversion.
The multiple etching process can improve the precision and performance of the waveguide.
The connection mode of the invention is beneficial to improving the transmission efficiency of the optical signal.
The design of the second step tapered waveguide of the present invention facilitates mode spot conversion, and both the width variation and the offset design of the direction facilitate efficient transmission of optical signals.
The second step linear taper waveguide design of the present invention, whose width is linearly narrowed from the optical field transmission direction, helps to control and optimize the transmission of the optical path.
The coupling design of the second-step output waveguide and the optical fiber and the coupling structure comprising the cladding are beneficial to improving the quality and stability of an optical path.
The material, thickness and coverage of the cladding layer of the present invention, as well as the overall design including the substrate layer, insulating layer and spot-size converter structure, help to improve the stability and durability of the device.
The materials and thickness of the substrate layer and the insulating layer of the invention are designed to help prevent light from leaking to the substrate layer, and improve the transmission efficiency of optical signals.
The specific dimensions of the waveguides of the steps of the present invention are designed to help optimize the transmission and conversion effects of the optical signals.
The waveguide material and the preparation process of the invention comprise the processes of using thin film lithium niobate, silicon nitride thin film material, silicon material and the like, adopting ICP etching, dry etching, wet etching, femtosecond laser assisted chemical mechanical polishing and the like, and the diversified material and process selection provides more possibility, and the most suitable material and process can be selected according to specific requirements.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a perspective structure of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a planar structure of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter according to an embodiment of the present invention;
FIG. 3 is a diagram of a simulation example of the evolution of the mode field of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter provided by an embodiment of the present invention;
FIG. 4 is a simulated light field transmission diagram of the evolution of the mode field of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter provided by an embodiment of the present invention;
FIG. 5 is a transmission curve of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter according to an embodiment of the present invention at 1.26um to 1.6 um.
FIG. 6 is a reflection contrast diagram of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter with an overlay error of 200nm in a first layer waveguide and a second layer waveguide according to an embodiment of the present application;
in the figure: 1-first step waveguide, 1.1 first step waveguide primary etching, 1.2 first step waveguide secondary etching, 2-second step slab waveguide, 3-second step tapered waveguide, 4-second step linear tapered waveguide, 5-second step output waveguide, 6-cladding layer, 7-insulating layer, 8-substrate layer.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Aiming at the problems existing in the prior art, the invention provides a deep ultraviolet lithography integrated optical waveguide to optical fiber low-reflection mode spot converter, and the technical scheme of the invention is further described in detail below with reference to the accompanying drawings and the embodiment.
Examples
FIG. 1 is a schematic diagram of a deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter structure of the present invention, comprising, from bottom to top: a substrate layer 8, an insulating layer 7, a template transducer and a cladding layer 6,
FIG. 2 is a schematic plan view of the structure, in this embodiment, all waveguides have a thickness of 180. Mu.m, the width of the upper surface of the first step waveguide is 0.3. Mu.m, the width of the second step slab waveguide is 2. Mu.m, the width of the head end of the second step tapered waveguide is 2. Mu.m, the width of the tail end is 1. Mu.m, the waveguide center is shifted upward in the direction perpendicular to the waveguide by 1.5. Mu.m, the width of the head end of the 4-second step linear tapered waveguide is 1. Mu.m, the width of the tail end is 0.2. Mu.m, and the wavelength of the input light is from 1.26 μm to 1.6. Mu.m.
In an embodiment of the invention, fig. 3 shows a simulation example of the mode field evolution of a deep ultraviolet lithography integrated optical waveguide to fiber low reflection mode spot converter. This figure provides us with an intuitive view showing the process of mode-spot conversion after light enters the mode-spot converter from a specific mode field, where the light first passes through the first step waveguide 1, where the width of the waveguide is gradually narrowed. This design ensures that the mode field of the light gradually transitions from a larger state to a smaller state to match the mode field of the target. The light then enters the second step tapered waveguide 3 and continues its mode field transition. At this stage the mode field of the light is further concentrated and finally tuned by the second step linear tapered waveguide 4. After the mode field adjustment described above, the mode field of the light has been optimized to match the target waveguide or fiber. Light is output from the output end of the spot-size converter and enters the target waveguide or fiber, such as the optical field transmission diagram shown in fig. 4. The core of the whole process is that by precisely adjusting the geometric parameters of the waveguide, the mode field of light can smoothly transition from a larger state to a smaller state, thereby achieving efficient optical coupling. The design not only ensures the efficient transmission of light, but also reduces the reflection caused by the mode spot transition of the mode spot converter, ensures the increase of the line width of the waveguide, and simultaneously ensures the process robustness of the device.
Overlay bias is a common challenge in the fabrication of integrated optical devices, which can affect device performance. However, the design of the present embodiment is somewhat robust to such deviations. As shown in fig. 5, even if there is an overlay deviation of 200nm between the first step waveguide and the second step waveguide, the loss of optical field transmission is minimized. This observation is evident from the figures: the abscissa indicates the length (in microns) of the spot-size converter, while the ordinate indicates the transmittance. The transmittance remains at a high level despite overlay bias, indicating that the loss of light is very small. Further, FIG. 6 provides us with a deeper view angle, comparing the reflection case when there is a 200nm overlay deviation between the first step waveguide and the second step waveguide, and the effect of reflection is almost negligible despite such deviation. This means that the design of the present embodiment is not only very robust against overlay bias, but also ensures efficient transmission of light. This robust design is critical, especially in mass production, because it can significantly improve product yields, reduce production costs, and ensure high device performance.
As shown in fig. 5, in the case of deviation of 200nm between the first step waveguide and the second step waveguide of the device, the optical field transmission loss is not affected, wherein the abscissa is the length unit micron of the mode spot converter, the ordinate is the transmittance, and in fig. 6, when the deviation of 200nm between the first step waveguide and the second step waveguide is compared, the reflected power is compared, so that the influence on reflection is almost not seen in the case of deviation between the alignment of the embodiment, and the embodiment of the invention ensures the capability of low loss, low reflection and large process tolerance while increasing the linewidth of the first step etched waveguide, thereby having great application value.
The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the invention is not limited thereto, but any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention will be apparent to those skilled in the art within the scope of the present invention.
Claims (10)
1. A deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter, the converter comprising in particular: the waveguide structure comprises a first step waveguide, a second step slab waveguide, a second step tapered waveguide, a second step linear tapered waveguide and a second step output waveguide.
2. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1 wherein said first step waveguide is a first layer etched waveguide and includes a waveguide after a second etching based thereon.
3. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1, wherein said second step slab waveguide is a second layer etched waveguide connected to said second step tapered waveguide along an optical transmission direction waveguide tail.
4. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1 wherein said second step tapered waveguide is a second layer etched waveguide for mode spot conversion, the waveguide width is narrowed from wide to narrow by the optical field transmission direction, and the waveguide is offset up or down in a direction perpendicular to the optical field transmission direction, the waveguide narrowing end thereof being connected to the second step linear tapered waveguide head end.
5. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1 wherein said second step linear tapered waveguide is a second layer etched waveguide having a waveguide width linearly narrowing from a light field transmission direction and a tip connected to said second step output waveguide.
6. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1, wherein the second step output waveguide is a second layer etched waveguide with a fixed width extending to an end face for end face coupling with the optical fiber; the coupling structure further includes a cladding layer.
7. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 6 wherein said cladding layer overlies said first step waveguide, said second step linear tapered waveguide and said second step narrow waveguide; the cladding is a silicon oxide layer; the thickness of the cladding is 500 nm-7 mu m; the device includes, from bottom to top, a substrate layer, an insulating layer, and the spot-size converter structure.
8. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 7, wherein said substrate layer is a silicon layer or a quartz layer with a thickness of 200 μm to 900 μm; the insulating layer is a silicon oxide layer with the thickness of 2-20 mu m and is used for preventing light from leaking to the substrate layer.
9. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 1 wherein said first step waveguide has a width of 0.1 μm to 1 μm;
the length of the second-step conical waveguide is 50-1000 mu m, the width of the tip is 0.5-5 mu m, and the width of the first section is 2-15 mu m;
the length of the linear tapered waveguide in the second step is 0-1000 mu m, the width of the tip is 80-500 nm, and the width of the head end is 0.5-5 mu m;
the width of the narrow waveguide in the second step is 80 nm-500 nm;
the width of the narrow waveguide in the second step is 80 nm-500 nm.
10. The deep ultraviolet lithography integrated optical waveguide to optical fiber low reflection mode spot converter of claim 9, wherein said first step waveguide, said second step linear tapered waveguide and said second step narrow waveguide are thin film lithium niobate having a waveguide tilt angle of 60 ° to 70 °, an overall thickness of 200nm to 600nm, and an etched thickness of 100nm to 300nm.
The optical waveguide is made of materials including, but not limited to, lithium niobate thin film materials, silicon nitride thin film materials and silicon materials;
the optical waveguide is prepared by adopting a preparation process including but not limited to ICP etching, dry etching, wet etching and femtosecond laser assisted chemical mechanical polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311105276.1A CN117270109A (en) | 2023-08-30 | 2023-08-30 | Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311105276.1A CN117270109A (en) | 2023-08-30 | 2023-08-30 | Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117270109A true CN117270109A (en) | 2023-12-22 |
Family
ID=89209490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311105276.1A Pending CN117270109A (en) | 2023-08-30 | 2023-08-30 | Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117270109A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564406A (en) * | 2004-04-02 | 2005-01-12 | 华中科技大学 | Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter |
| US20060285797A1 (en) * | 2003-10-09 | 2006-12-21 | Little Brent E | Integrated optical mode shape transformer and method of fabrication |
| CN101308230A (en) * | 2008-07-03 | 2008-11-19 | 中国科学院上海微***与信息技术研究所 | Isolator silicon based three-dimensional wedge-shaped spot-size converter and method for making same |
| CN113885132A (en) * | 2021-10-22 | 2022-01-04 | 清华大学 | Optical fiber and optical waveguide coupled spot-size converter and manufacturing method thereof |
| CN115877506A (en) * | 2023-02-08 | 2023-03-31 | 之江实验室 | Thin-film lithium niobate end-face coupler covering visible light wave band and preparation method thereof |
-
2023
- 2023-08-30 CN CN202311105276.1A patent/CN117270109A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060285797A1 (en) * | 2003-10-09 | 2006-12-21 | Little Brent E | Integrated optical mode shape transformer and method of fabrication |
| CN1564406A (en) * | 2004-04-02 | 2005-01-12 | 华中科技大学 | Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter |
| CN101308230A (en) * | 2008-07-03 | 2008-11-19 | 中国科学院上海微***与信息技术研究所 | Isolator silicon based three-dimensional wedge-shaped spot-size converter and method for making same |
| CN113885132A (en) * | 2021-10-22 | 2022-01-04 | 清华大学 | Optical fiber and optical waveguide coupled spot-size converter and manufacturing method thereof |
| CN115877506A (en) * | 2023-02-08 | 2023-03-31 | 之江实验室 | Thin-film lithium niobate end-face coupler covering visible light wave band and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7079741B2 (en) | Optical interconnection circuit board and manufacturing method thereof | |
| US7184630B2 (en) | Optical coupling module with self-aligned etched grooves and method for fabricating the same | |
| US7095920B1 (en) | Broadband optical via | |
| US8126301B2 (en) | Optical waveguide and method for producing the same | |
| US10859764B2 (en) | Integrated active devices with improved optical coupling between active and passive waveguides | |
| CN111665592B (en) | LNOI (Low noise optical element) suspended spot-size converter and process implementation method thereof | |
| JP2008530615A (en) | Multi-core planar optical waveguide and method of manufacturing and using the same | |
| CN113640913B (en) | LNOI (Low noise optical) fundamental mode spot converter directly coupled with single-mode fiber | |
| CN113885132B (en) | Optical fiber and optical waveguide coupled spot size converter and manufacturing method thereof | |
| US11287573B1 (en) | Heterogeneously integrated photonic devices with improved optical coupling between waveguides | |
| US20210373235A1 (en) | Integrated active devices with enhanced optical coupling to dielectric waveguides | |
| CN113835158B (en) | Free space light and photon chip end face coupling method | |
| US20090020839A1 (en) | Semiconductor light receiving device and method for manufacturing same | |
| CN115857091A (en) | MMI polarization beam splitter of lithium niobate thin film | |
| CN113376743B (en) | Spot-size converter based on long-period grating | |
| JP5509556B2 (en) | Optical waveguide diameter expanding circuit, manufacturing method thereof, and optical waveguide device | |
| JPH07128531A (en) | Optical integrated circuit and its production | |
| CN117270109A (en) | Deep ultraviolet lithography integrated optical waveguide-optical fiber low-reflection mode spot converter | |
| CN115755275B (en) | Miniaturized slit waveguide mode conversion device based on sub-wavelength structure | |
| CN112415652A (en) | Waveguide grating coupler array | |
| CN109283619B (en) | Mode spot-size converter based on double-layer polymer waveguide and preparation method thereof | |
| EP4231066A1 (en) | Integrated gaas active devices with improved optical coupling to dielectric waveguides | |
| EP2613186B1 (en) | Optical transmission structure, method of manufacturing same, and optical transmission module | |
| JP2005164801A (en) | Optical waveguide film and its manufacturing method | |
| JP7440573B2 (en) | Heterogeneous GaN laser and active components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |