CN117240187A - Near-field thermophotovoltaic device with two-dimensional photonic crystal radiator - Google Patents
Near-field thermophotovoltaic device with two-dimensional photonic crystal radiator Download PDFInfo
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to the technical field of near-field thermophotovoltaic thermoelectric conversion, and discloses a near-field thermophotovoltaic device with a two-dimensional photonic crystal radiator, which comprises a two-dimensional photonic crystal radiator assembly and a thermophotovoltaic cell assembly; the two-dimensional photonic crystal radiator assembly comprises a two-dimensional photonic crystal radiator; the two-dimensional photonic crystal radiator consists of a plurality of periodically arranged composite units; the thermophotovoltaic cell assembly comprises a thermophotovoltaic cell, an anode metal plate, a cathode metal plate and an insulating layer; the thermophotovoltaic cell is arranged above the negative electrode metal plate; the insulating layer is arranged at the side end face of the thermophotovoltaic cell, which is flush with the negative electrode metal plate; the positive electrode metal plate is arranged in a serpentine shape close to the insulating layer; the two-dimensional photonic crystal radiator and the thermophotovoltaic cell are arranged in parallel and opposite. The two-dimensional photon crystal radiator enables the radiation spectrum to be more matched with the absorption characteristic of the thermophotovoltaic cell, and enables the output power density and the conversion efficiency to be improved simultaneously.
Description
Technical Field
The invention relates to the technical field of near-field thermophotovoltaic thermoelectric conversion, in particular to a near-field thermophotovoltaic device with a two-dimensional photon crystal radiator.
Background
Thermophotovoltaics are a type of thermoelectric conversion technology that uses radiant energy from a heat source to generate electricity. The radiator in the thermophotovoltaic system is responsible for emitting radiant energy with spectrum matching the absorption characteristic of the thermophotovoltaic cell, and the thermophotovoltaic cell converts the radiant energy above the band gap into electric energy through the photovoltaic effect. The main application scenarios of the thermal photovoltaic at present are waste heat recovery power generation, solar thermal power generation, isotope power generation, combustion power generation and the like.
Compared with the traditional thermal photovoltaic power generation technology, the near-field thermal photovoltaic technology reduces the gap between the radiator and the thermal photovoltaic cell to be within the characteristic wavelength, and evanescent wave coupling between the radiator and the battery is caused by the near-field thermal radiation effect (also called photon tunneling effect). Wherein the characteristic wavelength refers to the peak wavelength corresponding to the maximum value of the absolute blackbody radiation powerλCan be calculated by the wien's law of displacement. This value is about 10 μm at normal temperature. Because the intensity of evanescent waves can be several orders of magnitude greater than that of traditional thermophotovoltaic waves, the photo-generated current in the thermophotovoltaic cells is also increased by several orders of magnitude, resulting in a sharp increase in output power density. Furthermore, since the gap between the radiator and the battery in the near-field thermophotovoltaics is sufficientNear, the visual angle factor is infinitely close to 1, and the radiation leakage problem existing in the traditional thermophotovoltaic technology can be avoided.
In the near-field thermophotovoltaic devices that have been realized currently, most of the radiators used are based on planar structures doped with silicon, and the regulation capability for the radiation spectrum is limited, resulting in that their radiation spectrum is mostly distributed below the thermophotovoltaic cell bandgap. While thermophotovoltaic cells can only convert radiant energy distributed over the cell bandgap to electrical energy, this spectral mismatch phenomenon greatly limits the conversion efficiency of near-field thermophotovoltaic devices.
Disclosure of Invention
In order to solve the technical problems, the invention provides a near-field thermophotovoltaic device with a two-dimensional photonic crystal radiator, and the radiation spectrum is regulated and controlled through the two-dimensional photonic crystal so as to realize high output power density and high conversion efficiency.
The aim of the invention is realized by the following technical scheme: a near field thermophotovoltaic device having a two-dimensional photonic crystal radiator, comprising a two-dimensional photonic crystal radiator assembly and a thermophotovoltaic cell assembly; the two-dimensional photonic crystal radiator assembly comprises a two-dimensional photonic crystal radiator; the two-dimensional photonic crystal radiator consists of a plurality of periodically arranged composite units; the thermophotovoltaic cell assembly comprises a thermophotovoltaic cell, an anode metal plate, a cathode metal plate and an insulating layer; the thermophotovoltaic cell is arranged above the negative electrode metal plate; the insulating layer is arranged at the side end face of the thermophotovoltaic cell, which is flush with the negative electrode metal plate; the positive electrode metal plate is arranged in a serpentine shape close to the insulating layer; the two-dimensional photonic crystal radiator and the thermophotovoltaic cell are arranged in parallel and opposite.
The two-dimensional photonic crystal is a special optical material with a two-dimensional periodic structure. The two-dimensional photonic crystal has the function of wavelength selection, and the spectrum can be regulated and controlled by adjusting the material proportion, the structure shape, the structure size and the like. If the two-dimensional photonic crystal radiator is reasonably designed, the radiation spectrum can be possibly adjusted towards a favorable direction, and the two-dimensional photonic crystal radiator has the potential of improving the conversion efficiency of the near-field thermophotovoltaic device.
The radiation spectrum of a two-dimensional photonic crystal radiator depends on the nature of the materials that make up the radiator and the proportions between the different materials. Each material has unique radiation characteristics, and different combination ratios among the materials also have different radiation characteristics. Meanwhile, the two-dimensional photon crystal radiator and the thermophotovoltaic cell are integrated to obtain the near-field thermophotovoltaic device, and materials used for the thermophotovoltaic cell can also influence the performance. According to the invention, through regulating and controlling various parameter conditions including materials, the radiation spectrum of the two-dimensional photonic crystal radiator is more in line with the power generation requirement of the indium arsenide battery, and the device structure is optimized, so that the thermophotovoltaic cell keeps higher photoelectric conversion performance, and finally high conversion efficiency and output power density can be obtained. Moreover, the integrated device is more beneficial to application, and is easier to realize vacuum conditions in the cavity, and thermoelectric conversion can be realized without complex installation.
Preferably, the composite unit includes a filling portion and a main body portion surrounding the filling portion; the cross-sectional shapes of the composite unit and the filling part are square.
Preferably, the material of the main body part is doped silicon, and the doping type is N type or P type; the filling part is made of tantalum.
Preferably, the bulk portion is doped with silicon at a doping concentration of 1X 10 19 cm -3 Up to 1X 10 22 cm -3 More preferably, the doping concentration is 2×10 20 cm -3 Up to 1X 10 21 cm -3 The optimal doping concentration is 4×10 20 cm -3 。
Preferably, the two-dimensional photonic crystal radiator has a thickness dimensionHFrom 100 nm to 10 μm, more preferably,Hfrom 120 nm to 180 nm, most preferablyH150 nm.
Preferably, the composite unit cell sizeΛFrom 10 nm to 100 nm, more preferably,Λ20 nm to 40 nm.
Preferably, the filling portion has a side length dimensionWCorresponding filling ratiof=W 2 /Λ 2 From 0 to 1, more preferably，f=W 2 /Λ 2 From 0.5 to 0.7, most preferablyf =W 2 /Λ 2 0.6.
Preferably, the thermophotovoltaic cell is made of indium arsenide; the anode metal plate and the cathode metal plate are made of gold; the insulating layer is made of polyimide.
Preferably, a gap between the two-dimensional photonic crystal radiator and the opposite surface of the thermophotovoltaic celldFrom 100 nm to 10 μm, more preferably,dfrom 100 nm to 200 nm, most preferablyd100 nm.
Preferably, the thermophotovoltaic cell assembly further includes a cell substrate; the battery substrate is arranged on one side of the negative electrode metal plate, which is far away from the thermophotovoltaic cell; the snakelike arrangement mode of the positive electrode metal plate is as follows: dividing the positive electrode metal plate into an upper section, a middle section and a lower section, wherein the side surface of the upper section is close to the thermophotovoltaic cell, the side surface of the middle section is close to the insulating layer, and the side surface of the lower section is close to the cell substrate; the width of the upper section side surface of the positive electrode metal plate, which is close to the thermophotovoltaic cell, is not used for shielding the right-facing area between the two-dimensional photon crystal radiator and the thermophotovoltaic cell.
Preferably, the near field thermophotovoltaic device further comprises a heat sink and a support layer; the radiating fin is made of copper; the material of the supporting layer is silicon dioxide or intrinsic silicon; the radiating fin is arranged on one side of the battery substrate far away from the negative electrode metal plate; the support layer is arranged between the two-dimensional photonic crystal radiator component and the thermophotovoltaic cell component.
And the waste heat of the thermophotovoltaic cell assembly dissipates heat through the radiating fins. The support layer is used for maintaining a gap between the two-dimensional photonic crystal radiator assembly and the thermophotovoltaic cell assembly, and supporting the radiator and sealing the assemblies. The whole closed cavity maintains a vacuum state.
Preferably, the temperature of the two-dimensional photonic crystal radiator assembly is raised to the temperature by means of solar photo-thermal, combustion heating, isotope heat source or waste heat absorption600 to 1500K, and through the heat dissipation effect of the heat sink,so that the temperature of the thermophotovoltaic cell assembly is maintained at +.>=300±2K。
Preferably, the two-dimensional photonic crystal radiator assembly further comprises a radiator substrate; the radiator substrate is arranged on one side of the two-dimensional photonic crystal radiator, which is far away from the thermophotovoltaic cell; the radiator substrate is made of tantalum.
Compared with the prior art, the invention has the following beneficial effects:
(1) The semiconductor and the metal are used as the main body part and the filling part of the two-dimensional photonic crystal respectively, and the dielectric property of the two-dimensional photonic crystal can be changed by adjusting the proportion, the structural size and the like of the two materials, so that the radiation spectrum of the radiator can be regulated and controlled to be matched with the band gap of the thermophotovoltaic cell, and the conversion efficiency of the near-field thermophotovoltaic device is improved;
(2) The two-dimensional photonic crystal has abundant structural parameter adjustability compared with the one-dimensional photonic crystal, and the performance of the two-dimensional photonic crystal in a near-field thermophotovoltaic is superior to that of the one-dimensional and three-dimensional photonic crystal;
(3) In terms of production process, a square-structured two-dimensional photonic crystal is easier to manufacture than a round-structured photonic crystal with similar performance;
(4) Compared with the conventional far-field thermal photovoltaic, the near-field thermal photovoltaic applies the near-field thermal radiation effect, and the output power density is greatly improved;
(5) The serpentine arrangement of the positive electrode metal plates can ensure that the thermophotovoltaic cell is not shielded, and the plate-shaped negative electrode metal plates can increase reflection, so that the thermophotovoltaic cell can maintain higher photoelectric conversion performance; and the metal plates of the positive electrode and the negative electrode can be uniformly distributed on the same surface, so that electrode wiring and wiring extraction under the nanogap are easier.
Drawings
FIG. 1 is a schematic diagram of a structure of a near field thermophotovoltaic device having a two-dimensional photonic crystal radiator;
FIG. 2 is a cross-sectional view of a two-dimensional photonic crystal radiator at the A-A level;
FIG. 3 is a graph of dielectric function of a two-dimensional photonic crystal radiator as a function of frequency in a direction perpendicular to the optical axis and in a direction parallel to the optical axis;
FIG. 4 is a net radiation spectrum of a two-dimensional photonic crystal radiator;
FIG. 5 is a graph of output power density and conversion efficiency of a near field thermophotovoltaic device as a function of structural size;
FIG. 6 is a graph of output power density and conversion efficiency of a near field thermophotovoltaic device as a function of fill ratio;
FIG. 7 is a graph of output power density and conversion efficiency of a near field thermophotovoltaic device as a function of radiator temperature;
FIG. 8 is a graph of output power density and conversion efficiency of a near field thermophotovoltaic device as a function of doped silicon doping concentration;
fig. 9 is a graph of output power density and conversion efficiency of a near field thermophotovoltaic device as a function of gap.
The reference numerals are: 1. a two-dimensional photonic crystal radiator assembly; 1-1, a radiator base; 1-2, a two-dimensional photonic crystal radiator; 2. a thermophotovoltaic cell assembly; 2-1, a thermophotovoltaic cell; 2-2, a positive electrode metal plate; 2-3, a negative electrode metal plate; 2-4, a battery substrate; 2-5, an insulating layer; 3. a heat sink; 4. a support layer; 5. a composite unit; 5-1, a main body portion; 5-2, filling part.
Detailed Description
The technical scheme of the present invention is described below by using specific examples, but the scope of the present invention is not limited thereto:
according to the invention, spectrum adjustment is performed by five methods of adjusting the filling proportion of the two-dimensional crystal radiator, the size of the crystal structure, the thickness, the doping concentration and the size of the gap between the radiator and the thermophotovoltaic cell, so that high-efficiency and high-efficiency thermoelectric conversion is realized, and the requirements of different working conditions are met.
The near-field thermophotovoltaic device based on the two-dimensional photonic crystal radiator comprises a two-dimensional photonic crystal radiator assembly 1, a thermophotovoltaic cell assembly 2, a heat sink 3 and a supporting layer 4. As shown in fig. 1, the two-dimensional photonic crystal radiator assembly 1 is arranged above the thermophotovoltaic cell assembly 2 and is horizontally and oppositely arranged in parallel, the radiating fins 3 are arranged below the thermophotovoltaic cell assembly 2, the material is copper, the supporting layer 4 is arranged between the two-dimensional photonic crystal radiator assembly 1 and the thermophotovoltaic cell assembly 2, and the material is intrinsic silicon or silicon dioxide, so that the supporting and sealing functions are achieved, and the vacuum state is maintained in the whole sealed cavity.
Specifically, the two-dimensional photonic crystal radiator assembly 1 includes a radiator substrate 1-1 and a two-dimensional photonic crystal radiator 1-2 provided below the radiator substrate 1-1. The two-dimensional photonic crystal radiator 1-2 is formed by tightly connecting a plurality of cuboid-shaped composite units 5 and is arranged periodically, the composite units 5 consist of filling portions 5-2 and main body portions 5-1 surrounding the filling portions 5-2, and the cross sections of the composite units 5 and the filling portions 5-2 are square. The main body 5-1 of the composite unit 5 is made of doped silicon, the filling 5-2 is made of tantalum, and the radiator base 1-1 is made of tantalum.
Specifically, the thermophotovoltaic cell assembly 2 includes a thermophotovoltaic cell 2-1, a positive electrode metal plate 2-2, a negative electrode metal plate 2-3, a cell substrate 2-4, and an insulating layer 2-5. The thermophotovoltaic cell 2-1 and the two-dimensional photonic crystal radiator 1-2 are arranged in parallel relatively, and the distance between the surfaces is relatively larged100 nm to 10 μm. The negative electrode metal plate 2-3 is arranged below the thermophotovoltaic cell 2-1, the cell substrate 2-4 is arranged below the negative electrode metal plate 2-3, and the thermophotovoltaic cell 2-1 and the cell substrate 2-4 are made of indium arsenide. The insulating layer 2-5 is arranged at the side end face of the thermophotovoltaic cell 2-1, which is flush with the negative electrode metal plate 2-3, and is made of polyimide, so that the insulating layer plays roles of spacing and insulation. The positive electrode metal plate 2-2 is disposed closely to the insulating layer 2-5. The positive electrode metal plate 2-2 is divided into an upper section, a middle section and a lower section, the side face of the upper section is abutted against the upper surface of the thermophotovoltaic cell 2-1, the side face of the middle section is abutted against the right surface of the insulating layer 2-5, the side face of the lower section is abutted against the upper surface of the cell substrate 2-4, the whole positive electrode metal plate 2-2 is arranged in a serpentine shape, and the width of the side face of the upper section of the positive electrode metal plate 2-2 abutted against the thermophotovoltaic cell 2-1 does not shade the right-facing area between the two-dimensional photon crystal radiator 1-2 and the thermophotovoltaic cell 2-1. The anode metal plate 2-2 and the cathode metal plate 2-3 are made of gold.
The temperature of the two-dimensional photonic crystal radiator assembly 1 is raised to the temperature by means of solar photo-thermal, combustion heating, isotope heat source, waste heat absorption and the like600K-1500K, and can ensure that silicon materials are not melted while meeting the temperature condition of efficient thermoelectric conversion of the near-field thermophotovoltaic device. The temperature of the thermophotovoltaic cell assembly 2 can be maintained at=300K. The large temperature difference between the two-dimensional photonic crystal radiator assembly 1 and the thermophotovoltaic cell assembly 2 is a key factor of the near field thermophotovoltaic device having high conversion efficiency and output power density. The lower cell temperature can also enable the thermophotovoltaic cell 2-1 to maintain higher photoelectric conversion performance.
Indium arsenide thermophotovoltaic cell has a bandgap of about 300KE g =0.354 eV, i.e. it can only convert photons with a frequency greater than this band gap into electrons. In general, the more photons the emitter emits above the band gap, the more free electrons the thermophotovoltaic cell 2-1 can convert to, and the higher the output power density and conversion efficiency.
The spectral heat flux density describes the radiant heat flux density at a specific photon frequency and can be used to determine the distribution of photons in the emission spectrum. Spectral heat flux density between two-dimensional photonic crystal radiator 1-2 and thermophotovoltaic cell 2-1Can be calculated by the theory of wave electrodynamics: />
Wherein the method comprises the steps ofAt a temperature ofTThe time frequency is +.>Average energy of harmonic oscillator of +.>Is a vacuum transverse wave vector.
Is an energy transfer coefficient, characterized by a photon frequency of +.>And transverse wave vector +.>Probability of radiant energy transfer occurring: />
Wherein the method comprises the steps ofIs a vacuum wave vector and is equal to the ratio of photon frequency to light speed in vacuum; />Is a vacuum longitudinal wave vector->And->The surface reflection coefficients of the radiator and the thermophotovoltaic cell respectively; the superscripts s and p represent contributions of s-polarization (transverse electric wave) and p-polarization (transverse magnetic wave), respectively.
The surface reflectance is mainly dependent on the dielectric function of the objectAnd thickness ofH. Two-dimensional photonic crystal radiator 1-2 as shown in FIG. 2, whose equivalent dielectric function +.>Can be obtained by a second order approximation expression based on the effective medium theory:
wherein the subscript、/>Representing the components of the dielectric function in the perpendicular and parallel optical axes, respectively; />The wavelength is obtained by dividing the speed of light by the frequency; subscripts a and b represent the main body portion 5-1 and the filler portion 5-2 of the composite unit 5, respectively;Λfor the lattice size of the composite unit 5,f =W 2 /Λ 2 in order to achieve a filling ratio,Wto fill the side length of the portion 5-2. Subscripts 0 and 2 represent the zero-order approximation and the second-order approximation, respectively, and the expression for the zero-order approximation is: />
It can be seen that factors affecting the equivalent dielectric function of the two-dimensional photonic crystal radiator 1-2 are factors such as the material, filling ratio, lattice size of the composite unit, etc. of the body portion 5-1 and the filling portion 5-2. The dielectric function of the doped silicon material of the body portion 5-1 is affected by the doping concentration in addition to the doping type. In a word, the two-dimensional photonic crystal radiator 1-2 has the following 5 regulation modes for the radiant heat flow of the light under the near field scale: the fill ratio of the emitter, the doping concentration, the emitter thickness, the lattice size, the gap size between the emitter and the thermophotovoltaic cell, and the like. For the purpose of more clearly illustrating the objects, technical solutions and advantages of the embodiments of the present invention, these 5 control modes will be individually described below by way of examples.
Example 1
The effect of the filling ratio on the thermoelectric conversion efficiency and the output power density of the near-field thermophotovoltaic device was investigated:
according to the implementation in the general embodiment, the thickness dimension of the two-dimensional photonic crystal radiator 1-2 is specifically controlled to beHThe lattice size of the recombination unit 5 is =150 nmΛ=30 nm, filling ratiof=W 2 /Λ 2 The corresponding range is 0 to 1. The clearance between the lower surface of the two-dimensional photon crystal radiator 1-2 and the upper surface of the thermophotovoltaic cell 2-1 isd= 100 nm。
When the filling ratio is 0, the two-dimensional photonic crystal radiator 1-2 is converted into a silicon plane radiator; when the filling ratio is 1, the two-dimensional photonic crystal radiator 1-2 is converted into a tantalum planar radiator. When the filling ratio is between 0 and 1, the filling part 5-2 of the two-dimensional photonic crystal radiator 1-2 is made of tantalum, the main part 5-1 is made of doped silicon, the doping type is N-type, the doping material is phosphorus, and the doping concentration is 4 multiplied by 10 20 cm -3 。
As shown in fig. 3, by adjusting the filling ratio of the composite unit 5 of the two-dimensional photonic crystal radiator 1-2, the components of the radiator dielectric function in the vertical and parallel optical axis directions can be changed at the same time. The change in the dielectric function means that the response characteristics of the radiator to the electromagnetic field are changed, thereby adjusting the radiation spectrum.
As shown in fig. 4, the spectral heat flux density fraction distributed over the band gap is highest when the filling ratio is 0.6, which is significantly better than both silicon and tantalum planar radiators.
As shown in FIG. 5, when the filling ratio is 0.6, i.e., the side length dimension of the filling portion 5-2 is aboutWWhen=23 nm, the thermoelectric conversion efficiency and the output power density of the present invention both reach the maximum values.
Example 2
The effect of doping concentration on thermoelectric conversion efficiency and output power density of a near-field thermophotovoltaic device was investigated:
according to the implementation in the general embodiment, the thickness dimension of the two-dimensional photonic crystal radiator 1-2 is specifically controlled to beHThe lattice size of the recombination unit 5 is =150 nmΛ=30 nm, filling ratiof=W 2 /Λ 2 0.6. The clearance between the lower surface of the two-dimensional photon crystal radiator 1-2 and the upper surface of the thermophotovoltaic cell 2-1 isd=100 nm. The filling part 5-2 of the two-dimensional photon crystal radiator 1-2 is made of tantalum, the main part 5-1 is made of doped silicon, the doping type is N type, the doping material is phosphorus, and the doping concentration range is 1 multiplied by 10 19 cm -3 Up to 1X 10 22 cm -3 。
The change in doping concentration changes the equivalent dielectric function of the two-dimensional photonic crystal radiator 1-2, thereby changing the spectral heat flux density distribution, resulting in a change in conversion efficiency and output power density.
As shown in FIG. 6, when the doping concentration is about 4X 10 20 cm -3 When the thermoelectric conversion efficiency and the output power density of the present invention reach the maximum values.
Example 3
Exploring thicknessHEffects on thermoelectric conversion efficiency and output power density of near field thermophotovoltaic devices:
according to the implementation in the overall example, the lattice size of the composite unit 5 is specifically controlled to beΛ=30 nm, filling ratiof =W 2 /Λ 2 0.6. The filling part 5-2 of the two-dimensional photon crystal radiator 1-2 is made of tantalum, the main part 5-1 is made of doped silicon, the doping type is N type, the doping material is phosphorus, and the doping concentration is 4 multiplied by 10 20 cm -3 . The clearance between the lower surface of the two-dimensional photon crystal radiator 1-2 and the upper surface of the thermophotovoltaic cell 2-1 isd=100 nm. Thickness of two-dimensional photonic crystal radiator 1-2HRanging from 100 nm to 1000 nm.
As shown in fig. 7, when the thickness isHAt=150 nm, the thermoelectric conversion efficiency and the output power density of the present invention both reach the maximum values.
Example 4
Exploration of lattice sizeΛEffects on thermoelectric conversion efficiency and output power density of near field thermophotovoltaic devices:
according to the implementation in the general embodiment, the thickness dimension of the two-dimensional photonic crystal radiator 1-2 is specifically controlled to beHFilling ratio of the complex unit 5 =150 nmf =W 2 /Λ 2 0.6. The filling part 5-2 of the two-dimensional photon crystal radiator 1-2 is made of tantalum, the main part 5-1 is made of doped silicon, the doping type is N type, the doping material is phosphorus, and the doping concentration is 4 multiplied by 10 20 cm -3 . The clearance between the lower surface of the two-dimensional photon crystal radiator 1-2 and the upper surface of the thermophotovoltaic cell 2-1 isd=100 nm. The lattice size of the composite unit 5 ranges from 10 nm to 100 nm.
As shown in fig. 8, when the lattice sizeΛAt 10 nm, the thermoelectric conversion efficiency and the output power density of the present invention both reach the maximum values, and both the conversion efficiency and the output power density monotonically decrease as the lattice size further increases. Considering the limitations of photolithography, the lattice size of 10 nm is too small to be technically realized, while the lattice size of 20 to 40 nm is relatively easy to realize and the performance is not much degraded, so the lattice size of 20 to 40 nm is preferable.
Example 5
Exploration of gap RangedEffects on thermoelectric conversion efficiency and output power density of near field thermophotovoltaic devices:
according to the implementation in the general embodiment, the thickness dimension of the two-dimensional photonic crystal radiator 1-2 is specifically controlled to beHFilling ratio of the complex unit 5 =150 nmf =W 2 /Λ 2 The pair was 0.6. The filling part 5-2 of the two-dimensional photon crystal radiator 1-2 is made of tantalum, the main part 5-1 is made of doped silicon, the doping type is N type, the doping material is phosphorus, and the doping concentration is 4 multiplied by 10 20 cm -3 . The lattice size of the composite unit 5 is 30 nm. The gap range between the lower surface of the two-dimensional photon crystal radiator 1-2 and the upper surface of the thermophotovoltaic cell 2-1 isd=100 nm to 10 μm.
As shown in fig. 9, when the gap size is 100 nm, both the thermoelectric conversion efficiency and the output power density of the present invention reach the maximum values. And as the gap further increases, the output power density monotonically decreases, and the conversion efficiency at a gap of 100 nm is also significantly better than conventional far-field conditions.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures disclosed herein or modifications in the equivalent processes, or any application of the structures disclosed herein, directly or indirectly, in other related arts.
Claims (10)
1. A near field thermophotovoltaic device having a two-dimensional photonic crystal radiator, characterized in that it comprises a two-dimensional photonic crystal radiator assembly (1) and a thermophotovoltaic cell assembly (2);
the two-dimensional photonic crystal radiator assembly (1) comprises a two-dimensional photonic crystal radiator (1-2); the two-dimensional photonic crystal radiator (1-2) consists of a plurality of periodically arranged composite units (5);
the thermophotovoltaic cell assembly (2) comprises a thermophotovoltaic cell (2-1), a positive electrode metal plate (2-2), a negative electrode metal plate (2-3) and an insulating layer (2-5); the thermophotovoltaic cell (2-1) is arranged above the negative electrode metal plate (2-3); the insulating layer (2-5) is arranged at the side end face of the thermophotovoltaic cell (2-1) which is flush with the negative electrode metal plate (2-3); the positive electrode metal plate (2-2) is arranged in a serpentine shape close to the insulating layer (2-5);
the two-dimensional photonic crystal radiator (1-2) and the thermophotovoltaic cell (2-1) are arranged in parallel and opposite.
2. The near field thermophotovoltaic device with a two-dimensional photonic crystal radiator according to claim 1, wherein the composite unit (5) comprises a filling portion (5-2) and a main body portion (5-1) surrounding the filling portion (5-2); the cross-sectional shapes of the composite unit (5) and the filling part (5-2) are square.
3. A near field thermophotovoltaic device with a two dimensional photonic crystal radiator according to claim 2, wherein the material of the body portion (5-1) is doped silicon, the doping type being N-type or P-type; the filling part (5-2) is made of tantalum.
4. A near field thermophotovoltaic device with a two dimensional photonic crystal radiator according to claim 3 wherein the body portion (5-1) is doped with silicon having a doping concentration of 1 x 10 19 cm -3 Up to 1X 10 22 cm -3 。
5. According to claim 2-4A near field thermophotovoltaic device with a two-dimensional photonic crystal radiator, characterized in that the two-dimensional photonic crystal radiator (1-2) has a thickness dimensionH100 nm to 10 μm; lattice size of the composite unit (5)Λ10 nm to 100 nm; the filling part (5-2) has a side lengthWCorresponding filling ratiof = W 2 /Λ 2 From 0 to 1.
6. The near field thermophotovoltaic device with a two dimensional photonic crystal radiator according to one of the claims 1 to 4, wherein the thermophotovoltaic cell (2-1) is made of indium arsenide.
7. Near field thermophotovoltaic device with a two-dimensional photonic crystal radiator according to one of claims 1 to 4, characterized in that the gap between the two-dimensional photonic crystal radiator (1-2) and the opposite surface of the thermophotovoltaic cell (2-1)d100 nm to 10 μm.
8. The near field thermophotovoltaic device with a two dimensional photonic crystal radiator according to claim 1, wherein the thermophotovoltaic cell assembly (2) further comprises a cell substrate (2-4); the battery substrate (2-4) is arranged on one side of the negative electrode metal plate (2-3) far away from the thermophotovoltaic cell (2-1); the positive electrode metal plate (2-2) is arranged in a serpentine manner: dividing the positive electrode metal plate (2-2) into an upper section, a middle section and a lower section, wherein the side surface of the upper section is abutted against the thermophotovoltaic cell (2-1), the side surface of the middle section is abutted against the insulating layer (2-5), and the side surface of the lower section is abutted against the cell substrate (2-4); the width of the side face of the upper section of the positive electrode metal plate (2-2) close to the thermophotovoltaic cell (2-1) is not used for shielding the right-facing area between the two-dimensional photon crystal radiator (1-2) and the thermophotovoltaic cell (2-1).
9. The near field thermophotovoltaic device with a two-dimensional photonic crystal radiator according to claim 1 or 8, characterized in that the near field thermophotovoltaic device further comprises a heat sink (3) and a support layer (4); the radiating fin (3) is arranged on one side of the battery substrate (2-4) far away from the negative electrode metal plate (2-3); the supporting layer (4) is arranged between the two-dimensional photonic crystal radiator component (1) and the thermophotovoltaic cell component (2).
10. The near field thermophotovoltaic device with a two-dimensional photonic crystal radiator according to claim 1 or 8, characterized in that the two-dimensional photonic crystal radiator assembly (1) further comprises a radiator substrate (1-1); the radiator substrate (1-1) is arranged on one side of the two-dimensional photonic crystal radiator (1-2) away from the thermophotovoltaic cell (2-1).
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