CN117233458A - Power detection circuit and power detection system - Google Patents
Power detection circuit and power detection system Download PDFInfo
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Abstract
The invention provides a power detection circuit and a power detection system, wherein the output voltage output by a first operational amplifier has driving capability, so that the driving of a later-stage circuit can be realized; in addition, the RC filter module is bridged between the second input end and the output end of the first operational amplifier, the dynamic range of the output voltage can be adjusted by adjusting the resistor in the RC filter module, so that the resolution can be improved, the follow-up circuit processing is facilitated, in addition, the circuit realizes the decoupling between the common-mode voltage generating circuit and the circuit of the output voltage, and accordingly the common-mode voltage and the output voltage can be respectively adjusted, and the application is more convenient.
Description
Technical Field
The present invention relates to the field of circuit detection technologies, and in particular, to a power detection circuit and a power detection system.
Background
In the field of wireless WIFI communication, when receiving or transmitting a signal, signal power needs to be detected for subsequent circuit actions. One implementation of the related art is to let the input signal enter the interconnection point (cathode and anode connection points) of two diodes connected in series through capacitive coupling, and then the resulting signal is output from the cathode of one diode to a passive filter, so as to obtain a direct current voltage indicated by the magnitude of the input signal. Another way is to ac couple the input signal into the mos transistor, and the mos transistor generates an ac/dc current related to the input signal, the current generates a related voltage through a resistor, and the voltage is passed through a passive filter to obtain a dc voltage reflecting the magnitude of the signal. However, the related technology generally has the problem that the output voltage has no driving capability, and the dynamic change range of the output voltage is small, the resolution is not high, and the subsequent circuit processing is not facilitated; in addition, the common mode voltage and the circuits of the output voltage are coupled to each other, resulting in inconvenient adjustment.
Disclosure of Invention
The invention aims to provide a power detection circuit and a power detection system, which are used for improving the driving capability and resolution of output voltage and coupling a common-mode voltage with an adjusting circuit of the output voltage, so that the adjustment is more convenient.
The invention provides a power detection circuit, which comprises: the device comprises a voltage-current conversion module, a public module, a first operational amplifier and an RC filter module; a common module configured to: the input end is connected with a power supply, and the first output end is connected with the first input end of the voltage-current conversion module and is used for providing bias voltage for the voltage-current conversion module; the second output end is connected with the output end of the voltage-current conversion module and is used for providing bias current for the voltage-current conversion module; the third output end is connected with the first input end of the first operational amplifier and is used for outputting common-mode voltage; a voltage-to-current conversion module configured to: the first input end is connected with the first output end of the public module, the second input end receives the radio frequency voltage signal to be detected, and the output end is respectively connected with the second output end of the public module and the first end of the RC filter module and is used for outputting signal current corresponding to the radio frequency voltage signal under the action of bias voltage and bias current; an RC filtering module configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier and used for filtering signal current; a first operational amplifier configured to: the first input end is connected with the third output end of the public module, and the second input end is connected with the first end of the RC filter module; for converting the filtered signal current into an output voltage based on the common mode voltage to detect the power of the radio frequency voltage signal from the output voltage.
Further, the voltage-current conversion module includes: the first resistor, the first capacitor and the first field effect transistor; a first resistor configured to: the first end is connected with the first output end of the public module, and the second end is connected with the grid electrode of the first field effect tube; a first capacitance configured to: the first end receives a radio frequency voltage signal to be detected, and the second end is connected with the grid electrode of the first field effect tube; a first field effect transistor configured to: the source electrode is grounded; the drain electrode is respectively connected with the second output end of the public module and the first end of the RC filter module.
Further, the RC filtering module includes: a second resistor and a second capacitor; a second resistor configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier; a second capacitance configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier.
Further, the second resistor is an adjustable resistor; the second capacitor is an adjustable capacitor.
Further, the common module includes: the second resistor, the third capacitor, the second operational amplifier, the first current source, the second current source, the fourth resistor, the fourth field effect transistor, the fifth field effect transistor, the sixth field effect transistor and the seventh field effect transistor; a second field effect transistor configured to: the source electrode is connected with a power supply; the grid electrode is connected with the first end of the first resistor; the drain electrode is connected with the first input end of the second operational amplifier; a third field effect transistor configured to: the source electrode is connected with a power supply; the grid electrode is connected with the grid electrode of the second field effect tube; the drain electrode is connected with the drain electrode of the fifth field effect transistor; a third capacitance configured to: the first end is connected with the grid electrode of the second field effect transistor, and the second end is connected with the first end of the third resistor; a third resistor configured to: the second end is connected with the first input end of the second operational amplifier; a second operational amplifier configured to: the first input end is connected with the drain electrode of the second field effect transistor, and the second input end is connected with the first end of the fourth resistor; the output end is connected with the grid electrode of the second field effect tube; a first current source configured to: the first end is connected with a power supply; the second end is connected with the drain electrode of the fourth field effect transistor; a second current source configured to: the first end is connected with a power supply; the second end is connected with the first end of the fourth resistor;
a fourth resistor configured to: the first end is connected with the first input end of the first operational amplifier, and the second end is grounded; a fourth field effect transistor configured to: the drain electrode is connected with the grid electrode; the source electrode is grounded; a fifth field effect transistor configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the drain electrode of the third field effect transistor; the source electrode is grounded; a sixth field effect transistor configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the first input end of the second operational amplifier; the source electrode is grounded; a seventh field effect transistor configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the drain electrode of the first field effect transistor; the source is grounded.
Further, the first field effect transistor is a P-channel field effect transistor.
Further, the second field effect transistor and the third field effect transistor are P-channel field effect transistors.
Further, the fourth field effect transistor, the fifth field effect transistor, the sixth field effect transistor and the seventh field effect transistor are all N-channel field effect transistors.
The invention provides a power detection system, comprising: an external power supply, and a power detection circuit of any of the above.
Further, the power supply is used for supplying power to the power detection circuit.
According to the power detection circuit and the power detection system, the output voltage output by the first operational amplifier has driving capability, so that the driving of a later-stage circuit can be realized; in addition, the RC filter module is bridged between the second input end and the output end of the first operational amplifier, the dynamic range of the output voltage can be adjusted by adjusting the resistor in the RC filter module, so that the resolution can be improved, the follow-up circuit processing is facilitated, in addition, the circuit realizes the decoupling between the common-mode voltage generating circuit and the circuit of the output voltage, and accordingly the common-mode voltage and the output voltage can be respectively adjusted, and the application is more convenient.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a power detection circuit according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a power detection circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a relationship between output power and input power according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a power detection system according to an embodiment of the present invention.
Icon: r1-a first resistor; c1-a first capacitance; p1-a first field effect transistor; r2-a second resistor; c2-a second capacitance; r3-a third resistor; a C3-third capacitor; p2-second field effect transistor; p3-third field effect transistor; a1-a first operational amplifier; a2-a second operational amplifier; i1-a first current source; i5-a second current source; r4-fourth resistor; m1-fourth field effect transistor; m2-fifth field effect transistor; m3-sixth field effect transistor; m4-seventh field effect transistor; BLK 1-a voltage-current conversion module; a combination of a BLK 2-first operational amplifier and an RC filter module; BLK 3-common module; 40-a power supply; 41-a power detection circuit.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Currently, in the field of wireless WIFI communication, when receiving or transmitting a signal, signal power needs to be detected for a subsequent circuit action. When receiving signals, the received signals change along with the change of the communication position, the environment and the modulation mode of the signals, so that the receiving link correctly processes the changed signals, the circuit performance is ensured, the size of the input signals is required to be detected in real time, and the signal link is required to be adjusted according to the detected size of the signals. When transmitting signals, the transmitted signals also need to be detected in size and correspondingly adjusted according to the change of communication scenes and the change of self-modulated signals.
However, the power detection method in the related art generally has the following problems: 1. the output voltage has no driving capability; 2. the dynamic change range of the output voltage is small, which is not beneficial to the subsequent circuit processing, namely the resolution is not high; 3. the output voltage common mode point and the signal detection resolution are coupled to each other and cannot be separated. Based on this, the embodiment of the invention provides a power detection circuit and a power detection system, and the technology can be applied to applications requiring detection of signal power.
For the sake of understanding the present embodiment, first, a power detection circuit disclosed in the embodiment of the present invention is described, as shown in fig. 1, where the circuit includes: the voltage-current conversion module BLK1, the public module BLK3, the first operational amplifier and the RC filter module; a common module BLK3 configured to: the input end is connected with a power supply, and the first output end 1 is connected with the first input end 1 of the voltage-current conversion module BLK1 and is used for providing bias voltage for the voltage-current conversion module BLK 1; the second output end 2 is connected with the output end of the voltage-current conversion module BLK1 and is used for providing bias current for the voltage-current conversion module BLK 1; the third output 3 is connected to the first input 1 of the first operational amplifier for outputting a common mode voltage.
In practical implementation, the voltage-current conversion module BLK1 generally includes a power semiconductor device, such as a MOS transistor, and a corresponding bias voltage and bias current need to be provided for the power semiconductor device to ensure the normal operation of the power semiconductor device, so that the common module BLK3 can output the bias voltage through the first output terminal 1 and output the bias current through the second output terminal 2 after being powered on, and is respectively connected to the first input terminal 1 and the output terminal of the voltage-current conversion module BLK1 to provide the voltage-current conversion module BLK1 with the required bias voltage and bias current.
In the combination BLK2 of the first operational amplifier and the RC filter module, the first operational amplifier may also be referred to as a transimpedance amplifier; the first input 1 of the first operational amplifier is typically the positive input; in this embodiment, in order to ensure that the first operational amplifier works normally, a common-mode voltage needs to be connected to the positive input end 1 of the first operational amplifier; therefore, the common module BLK3 may also output a common mode voltage through the third output terminal 3 after being powered on, and be connected to the first input terminal 1 of the first operational amplifier to provide the first operational amplifier with the required common mode voltage.
The voltage-current conversion module BLK1 is configured to: the first input end 1 is connected with the first output end 1 of the public module BLK3, the second input end 2 receives a radio frequency voltage signal to be detected, and the output ends are respectively connected with the second output end 2 of the public module BLK3 and the first end 1 of the RC filter module and used for outputting signal current corresponding to the radio frequency voltage signal under the action of bias voltage and bias current.
The radio frequency voltage signal to be detected may be a radio frequency voltage signal collected from a wireless local area network chip; in practical implementation, after receiving the bias voltage provided by the common module BLK3 through the first input end 1 and receiving the bias current provided by the common module BLK3 through the output end, the circuit can work normally, at this time, the radio frequency voltage signal to be detected can be input through the second input end 2 of the voltage-current conversion module BLK1, and the output end can output a signal current corresponding to the radio frequency voltage signal, wherein the signal current generally comprises an alternating current component and a direct current component.
An RC filtering module configured to: the first end 1 is connected with the output end of the voltage-current conversion module BLK1, and the second end 2 is connected with the output end of the first operational amplifier and is used for filtering signal current.
A first operational amplifier configured to: the first input end 1 is connected with a third output end 3 of the public module BLK3, and the second input end 2 is connected with a first end 1 of the RC filter module; for converting the filtered signal current into an output voltage based on the common mode voltage to detect the power of the radio frequency voltage signal from the output voltage.
The RC filter module is a filter circuit which is generally composed of resistors and capacitors, the number and the connection mode of the resistors and the capacitors can be set according to actual requirements, and the RC filter module is bridged between the second input end 2 and the output end VOUT of the first operational amplifier; the RC filter module can filter alternating current components in signal current; the first operational amplifier may form a TIA (Trans-Impedance Amplifier, transimpedance amplifier) structure with a resistor in the RC filter module, so as to convert the filtered signal current into an output voltage, where the output voltage may have only a dc component, and may also have both an ac component and a dc component, and is specifically associated with a filtering condition of the RC filter module, for example, if the RC filter module filters all ac components in the signal current, and only the dc component remains, the output voltage of the first operational amplifier generally has only the dc component; otherwise, if the RC filter module does not filter all the ac components in the signal current, the ac component and the dc component are generally present in the output voltage of the first operational amplifier at the same time, where the output voltage may reflect the magnitude of the rf voltage signal to be detected, and the power of the rf voltage signal to be detected may be calculated according to the output voltage and the power calculation mode of the operational amplifier (refer to the related art).
The power detection circuit has driving capability through the output voltage output by the first operational amplifier, so that the driving of a rear-stage circuit can be realized; in addition, the RC filter module is bridged between the second input end and the output end of the first operational amplifier, the dynamic range of the output voltage can be adjusted by adjusting the resistor in the RC filter module, so that the resolution can be improved, the follow-up circuit processing is facilitated, in addition, the circuit realizes the decoupling between the common-mode voltage generating circuit and the circuit of the output voltage, and accordingly the common-mode voltage and the output voltage can be respectively adjusted, and the application is more convenient.
Further, as shown in fig. 2, a circuit schematic of a power detection circuit, the voltage-current conversion module BLK1 includes: the first resistor R1, the first capacitor C1 and the first field effect transistor P1; a first resistor R1 configured to: the first end is connected with the first output end of the public module BLK3, and the second end is connected with the grid electrode of the first field effect transistor P1; a first capacitance C1 configured to: the first end receives a radio frequency voltage signal to be detected, and the second end is connected with the grid electrode of the first field effect transistor P1; a first field effect transistor P1 configured to: the source electrode is grounded; the drain electrode is respectively connected with the second output end of the public module BLK3 and the first end of the RC filter module.
The first capacitor C1 may be also referred to as an ac coupling capacitor; VBP provides required bias voltage for the first field effect transistor P1 through the first resistor R1, the externally input radio frequency voltage signal VIN to be detected is coupled into the grid electrode of the first field effect transistor P1 through the first capacitor C1, and the signal current Iac_dc is output through the drain electrode of the first field effect transistor P1. The voltage-current conversion module BLK1 performs the function of converting the input radio frequency voltage signal into direct current and alternating current.
Further, the RC filtering module includes: a second resistor R2 and a second capacitor C2; a second resistor R2 configured to: the first end is connected with the output end of the voltage-current conversion module BLK1, and the second end is connected with the output end of the first operational amplifier A1; a second capacitance C2 configured to: the first end is connected with the output end of the voltage-current conversion module BLK1, and the second end is connected with the output end VOUT of the first operational amplifier A1.
In this embodiment, the RC filter module is composed of a second resistor R2 and a second capacitor C2 connected in parallel, and the second resistor R2 and the second capacitor C2 are both connected between the second input end (i.e. the negative input end) and the output end VOUT of the first operational amplifier A1 in a bridging manner, so as to form a filter circuit, as shown in fig. 2, the first end of the second resistor R2 and the first end of the second capacitor C2 are both connected with the drain electrode of the first field effect transistor P1 in the voltage-current conversion module BLK 1. The combination BLK2 of the first operational amplifier and the RC filter module in fig. 2 includes the RC filter module and the first operational amplifier A1.
Further, the second resistor R2 is an adjustable resistor; the second capacitor C2 is a tunable capacitor. In practical implementation, in order to meet the filter requirements of different application scenes and the range requirements of output voltage, the second resistor R2 can select an adjustable resistor, the second capacitor C2 can select an adjustable capacitor, and the range of the output voltage can be dynamically adjusted by adjusting the second resistor R2 and the second capacitor C2 so as to meet different application requirements, and the operation is more convenient and faster.
Further, as shown in fig. 2, the common module BLK3 includes: the second field effect transistor P2, the third field effect transistor P3, the third resistor R3, the third capacitor C3, the second operational amplifier A2, the first current source I1, the second current source I5, the fourth resistor R4, the fourth field effect transistor M1, the fifth field effect transistor M2, the sixth field effect transistor M3 and the seventh field effect transistor M4; a second field effect transistor P2 configured to: the source electrode is connected with a power supply; the grid electrode is connected with the first end of the first resistor R1; the drain electrode is connected with the first input end of the second operational amplifier A2; a third field effect transistor P3 configured to: the source electrode is connected with a power supply; the grid electrode is connected with the grid electrode of the second field effect transistor P2; the drain electrode is connected with the drain electrode of the fifth field effect transistor M2; a third capacitance C3 configured to: the first end is connected with the grid electrode of the second field effect transistor P2, and the second end is connected with the first end of the third resistor R3; a third resistor R3 configured to: the second end is connected with the first input end of the second operational amplifier A2; a second operational amplifier A2 configured to: the first input end is connected with the drain electrode of the second field effect transistor P2, and the second input end is connected with the first end of the fourth resistor R4; the output end is connected with the grid electrode of the second field effect transistor P2; a first current source I1 configured to: the first end is connected with a power supply; the second end is connected with the drain electrode of the fourth field effect transistor M1; a second current source I5 configured to: the first end is connected with a power supply; the second terminal is connected to the first terminal of the fourth resistor R4.
A fourth resistor R4 configured to: the first end is connected with the first input end of the first operational amplifier A1, and the second end is grounded; a fourth field effect transistor M1 configured to: the drain electrode is connected with the grid electrode; the source electrode is grounded; a fifth field effect transistor M2 configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor M1; the drain electrode is connected with the drain electrode of the third field effect transistor P3; the source electrode is grounded; a sixth field effect transistor M3 configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor M1; the drain electrode is connected with the first input end of the second operational amplifier A2; the source electrode is grounded; a seventh field effect transistor M4 configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor M1; the drain electrode is connected with the drain electrode of the first field effect transistor P1; the source is grounded.
The first input end of the second operational amplifier is a positive electrode input end, and the second input end is a negative electrode input end; as shown in fig. 2, the common module BLK3 may provide the bias voltage VBP and the bias current I4 for the voltage-current conversion module BLK1, provide the common-mode voltage VCM for the first operational amplifier A1 in the combination BLK2 of the first operational amplifier and the RC filter module, generate the common-mode voltage VCM for the second current source I5 and the fourth resistor R4, and provide the common-mode voltage VCM to the first operational amplifier A1 and the second operational amplifier A2, respectively; the current of the first current source I1 flows into the fourth field effect transistor M1 to generate bias voltage and is respectively supplied to the grid electrode of the fifth field effect transistor M2, the grid electrode of the sixth field effect transistor M3 and the grid electrode of the seventh field effect transistor M4; in this embodiment, the first fet P1, the second fet P2, and the third fet P3 may be selected to have the same model, or may be selected to have different models, for example, parameters of the fets may be selected in corresponding proportions; the fourth fet M1, the fifth fet M2, the sixth fet M3, and the seventh fet M4 may be selected to have the same model, or may be selected to have different models, for example, parameters of the fets may be selected in corresponding proportions.
For convenience of explanation, in this embodiment, the first fet P1, the second fet P2, and the third fet P3 are selected to have the same model, and the fourth fet M1, the fifth fet M2, the sixth fet M3, and the seventh fet M4 are selected to have the same model, so that i1=i2=i3=i4; the second field effect transistor P2, the third field effect transistor P3, the fifth field effect transistor M2, the sixth field effect transistor M3, the second operational amplifier A2, the third resistor R3 and the third capacitor C3 form a feedback loop for generating bias voltage VBP; since the first fet P1, the second fet P2, and the third fet P3 may be of the same type, and the fourth fet M1, the fifth fet M2, the sixth fet M3, and the seventh fet M4 may be of the same type, when the input rf voltage signal vin=0, the current I2/I3/I4 is equal to the current flowing through the first fet P1, the current flowing through the second resistor R2 is 0, and the output vout=vcm of the first operational amplifier A1 generates an ac/dc current iac_dc=idc+iac=f (VIN) in the first fet P1, and the current flows into the second resistor R2 to generate an ac/dc voltage= (idc+iac) ×r2=f (VIN) ×r2 when the input rf voltage signal VIN is not 0. The second resistor R2 and the second capacitor C2 form a filter circuit again, and when the bandwidth setting is sufficiently low, the ac component is filtered out, leaving only dc. Vout_dc=idc×r2 is obtained. And vcm=i5×r5, adjusting I5 or R5 can freely adjust VCM. And I4 provides bias current for normal operation of P1, when the input radio frequency voltage signal VIN is not 0, the I4 needs to be discharged, and the current led out by the radio frequency voltage signal VIN is ensured to enter the combination BLK2 of the first operational amplifier and the RC filter module.
Further, as shown in fig. 2, the first fet P1 is a P-channel fet.
Further, as shown in fig. 2, the second fet P2 and the third fet P3 are P-channel fets.
Further, as shown in fig. 2, the fourth fet M1, the fifth fet M2, the sixth fet M3, and the seventh fet M4 are all N-channel fets.
As shown in fig. 2, the first fet P1, the second fet P2, and the third fet P3 may be selected from P-channel MOS transistors, and the fourth fet M1, the fifth fet M2, the sixth fet M3, and the seventh fet M4 may be selected from N-channel MOS transistors. Of course, other suitable power devices may be selected according to the requirements.
As shown in a schematic diagram of the relationship between output power and input power in fig. 3, under the condition that the variation range of pin is the same, the variation range of pout can be adjusted by adjusting the combined action of the second resistor R2 and the common-mode voltage VCM, for example, by expanding the variation range of pout, a finer power detection result can be obtained, and the resolution is improved.
The power detection circuit can realize the driving of the output voltage to the rear stage, the common mode voltage of the output voltage and the dynamic range of the output voltage can be adjusted at will, and the common module BLK3 provides a proper working point for the voltage-current conversion module BLK1 and a proper common mode voltage for the first operational amplifier; the input radio frequency voltage signal VIN is coupled into a voltage-current conversion module BLK1 in an alternating mode to generate signal current; the signal current flows into the transimpedance amplifier and the RC filter circuit to form a direct-current output voltage. The power detection resolution and the dynamic range of the output voltage can be adjusted by adjusting the second resistor. The common mode voltage can be adjusted by adjusting the second current source and the fourth resistor of the common module BLK 3.
The power detection system provided by the invention, as shown in fig. 4, includes: an external power supply 40, and a power detection circuit 41 according to any of the above. Further, the power supply 40 is configured to supply power to the power detection circuit 41.
The power supply 40 is usually a power signal that can supply power to the circuit to ensure the normal operation of the circuit, and the size of the power signal can be set according to the actual requirement of the circuit, for example, 5V.
In the power detection system, the output voltage output by the first operational amplifier has driving capability, so that the driving of a rear-stage circuit can be realized; in addition, the RC filter module is bridged between the second input end and the output end of the first operational amplifier, the dynamic range of the output voltage can be adjusted by adjusting the resistor in the RC filter module, so that the resolution can be improved, the follow-up circuit processing is facilitated, in addition, the circuit realizes the decoupling between the common-mode voltage generating circuit and the circuit of the output voltage, and accordingly the common-mode voltage and the output voltage can be respectively adjusted, and the application is more convenient.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A power detection circuit, comprising: the device comprises a voltage-current conversion module, a public module, a first operational amplifier and an RC filter module;
the common module is configured to: the input end is connected with a power supply, and the first output end is connected with the first input end of the voltage-current conversion module and is used for providing bias voltage for the voltage-current conversion module; the second output end is connected with the output end of the voltage-current conversion module and is used for providing bias current for the voltage-current conversion module; the third output end is connected with the first input end of the first operational amplifier and is used for outputting common-mode voltage;
the voltage-to-current conversion module is configured to: the first input end is connected with the first output end of the public module, the second input end receives a radio frequency voltage signal to be detected, and the output end is respectively connected with the second output end of the public module and the first end of the RC filter module and is used for outputting signal current corresponding to the radio frequency voltage signal under the action of the bias voltage and the bias current;
the RC filtering module is configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier and used for filtering the signal current;
the first operational amplifier is configured to: the first input end is connected with the third output end of the public module, and the second input end is connected with the first end of the RC filter module; for converting the filtered signal current into an output voltage based on the common mode voltage to detect the power of the radio frequency voltage signal from the output voltage.
2. The power detection circuit of claim 1, wherein the voltage-to-current conversion module comprises: the first resistor, the first capacitor and the first field effect transistor;
the first resistor is configured to: the first end is connected with the first output end of the public module, and the second end is connected with the grid electrode of the first field effect tube;
the first capacitor is configured to: the first end receives a radio frequency voltage signal to be detected, and the second end is connected with the grid electrode of the first field effect tube;
the first field effect transistor is configured to: the source electrode is grounded; the drain electrode is respectively connected with the second output end of the public module and the first end of the RC filter module.
3. The power detection circuit of claim 1, wherein the RC filter module comprises: a second resistor and a second capacitor;
the second resistor is configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier;
the second capacitor is configured to: the first end is connected with the output end of the voltage-current conversion module, and the second end is connected with the output end of the first operational amplifier.
4. The power detection circuit of claim 3, wherein the second resistor is an adjustable resistor; the second capacitor is an adjustable capacitor.
5. The power detection circuit of claim 2, wherein the common module comprises: the second resistor, the third capacitor, the second operational amplifier, the first current source, the second current source, the fourth resistor, the fourth field effect transistor, the fifth field effect transistor, the sixth field effect transistor and the seventh field effect transistor;
the second field effect transistor is configured to: the source electrode is connected with a power supply; the grid electrode is connected with the first end of the first resistor; the drain electrode is connected with the first input end of the second operational amplifier;
the third field effect transistor is configured to: the source electrode is connected with a power supply; the grid electrode is connected with the grid electrode of the second field effect tube; the drain electrode is connected with the drain electrode of the fifth field effect transistor;
the third capacitor is configured to: the first end is connected with the grid electrode of the second field effect transistor, and the second end is connected with the first end of the third resistor;
the third resistor is configured to: the second end is connected with the first input end of the second operational amplifier;
the second operational amplifier is configured to: the first input end is connected with the drain electrode of the second field effect transistor, and the second input end is connected with the first end of the fourth resistor; the output end is connected with the grid electrode of the second field effect transistor;
the first current source is configured to: the first end is connected with a power supply; the second end is connected with the drain electrode of the fourth field effect transistor;
the second current source is configured to: the first end is connected with a power supply; the second end is connected with the first end of the fourth resistor;
the fourth resistor is configured to: the first end is connected with the first input end of the first operational amplifier, and the second end is grounded;
the fourth field effect transistor is configured to: the drain electrode is connected with the grid electrode; the source electrode is grounded;
the fifth field effect transistor is configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the drain electrode of the third field effect transistor; the source electrode is grounded;
the sixth field effect transistor is configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the first input end of the second operational amplifier; the source electrode is grounded;
the seventh field effect transistor is configured to: the grid electrode is connected with the grid electrode of the fourth field effect transistor; the drain electrode is connected with the drain electrode of the first field effect transistor; the source is grounded.
6. The power detection circuit of claim 2, wherein the first fet is a P-channel fet.
7. The power detection circuit of claim 5, wherein the second fet and the third fet are both P-channel fets.
8. The power detection circuit of claim 5, wherein the fourth fet, the fifth fet, the sixth fet, and the seventh fet are all N-channel fets.
9. A power detection system, comprising: an external power supply source, and a power detection circuit as claimed in any one of claims 1 to 8.
10. The power detection system of claim 9, wherein the power supply is configured to power the power detection circuit.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249827A (en) * | 2002-02-26 | 2003-09-05 | Nec Microsystems Ltd | Operational amplifier |
| CN101527597A (en) * | 2009-04-17 | 2009-09-09 | 青岛海信宽带多媒体技术有限公司 | Burst power monitoring unit and optical line terminal provided with same |
| CN101819229A (en) * | 2010-04-28 | 2010-09-01 | 复旦大学 | High dynamic range radio frequency signal power detection circuit |
| US20120008669A1 (en) * | 2010-07-07 | 2012-01-12 | Kabushiki Kaisha Toshiba | Power detector and wireless device |
| US20120294055A1 (en) * | 2011-05-18 | 2012-11-22 | Kim Eun-Hee | Power detector |
| CN103926967A (en) * | 2014-04-17 | 2014-07-16 | 重庆西南集成电路设计有限责任公司 | Low-voltage and low-power-consumption reference voltage source and low reference voltage generating circuit |
| US20140334209A1 (en) * | 2011-11-30 | 2014-11-13 | The Institute of Microelectronics of Chinese Academy of Sciences | Radio frequency power source having precise power detector |
| CN106199157A (en) * | 2016-07-18 | 2016-12-07 | 成都中冶节能环保工程有限公司 | A kind of signal amplifying type electrical network zero-crossing detection system based on biasing circuit |
| CN106405222A (en) * | 2016-09-20 | 2017-02-15 | 锐迪科微电子（上海）有限公司 | Radio frequency power detection circuit |
| CN112946359A (en) * | 2021-01-28 | 2021-06-11 | 江苏集萃智能集成电路设计技术研究所有限公司 | Power detector circuit based on current feedback loop and power signal detection method |
| EP4009060A1 (en) * | 2020-12-02 | 2022-06-08 | Nxp B.V. | Rf power detector |
| CN115754457A (en) * | 2022-11-21 | 2023-03-07 | 中国电子科技集团公司第十研究所 | Power amplifier's power detection circuitry |
| US20230132870A1 (en) * | 2021-10-30 | 2023-05-04 | Qualcomm Incorporated | Radio frequency (rf) power sensor |
| US20230276380A1 (en) * | 2022-02-28 | 2023-08-31 | Beijing Eswin Computing Technology Co., Ltd. | Automatic gain control system, control method, power detector and radio frequency receiver |
-
2023
- 2023-11-10 CN CN202311490470.6A patent/CN117233458B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249827A (en) * | 2002-02-26 | 2003-09-05 | Nec Microsystems Ltd | Operational amplifier |
| CN101527597A (en) * | 2009-04-17 | 2009-09-09 | 青岛海信宽带多媒体技术有限公司 | Burst power monitoring unit and optical line terminal provided with same |
| CN101819229A (en) * | 2010-04-28 | 2010-09-01 | 复旦大学 | High dynamic range radio frequency signal power detection circuit |
| US20120008669A1 (en) * | 2010-07-07 | 2012-01-12 | Kabushiki Kaisha Toshiba | Power detector and wireless device |
| US20120294055A1 (en) * | 2011-05-18 | 2012-11-22 | Kim Eun-Hee | Power detector |
| US20140334209A1 (en) * | 2011-11-30 | 2014-11-13 | The Institute of Microelectronics of Chinese Academy of Sciences | Radio frequency power source having precise power detector |
| CN103926967A (en) * | 2014-04-17 | 2014-07-16 | 重庆西南集成电路设计有限责任公司 | Low-voltage and low-power-consumption reference voltage source and low reference voltage generating circuit |
| CN106199157A (en) * | 2016-07-18 | 2016-12-07 | 成都中冶节能环保工程有限公司 | A kind of signal amplifying type electrical network zero-crossing detection system based on biasing circuit |
| CN106405222A (en) * | 2016-09-20 | 2017-02-15 | 锐迪科微电子（上海）有限公司 | Radio frequency power detection circuit |
| EP4009060A1 (en) * | 2020-12-02 | 2022-06-08 | Nxp B.V. | Rf power detector |
| CN112946359A (en) * | 2021-01-28 | 2021-06-11 | 江苏集萃智能集成电路设计技术研究所有限公司 | Power detector circuit based on current feedback loop and power signal detection method |
| US20230132870A1 (en) * | 2021-10-30 | 2023-05-04 | Qualcomm Incorporated | Radio frequency (rf) power sensor |
| US20230276380A1 (en) * | 2022-02-28 | 2023-08-31 | Beijing Eswin Computing Technology Co., Ltd. | Automatic gain control system, control method, power detector and radio frequency receiver |
| CN115754457A (en) * | 2022-11-21 | 2023-03-07 | 中国电子科技集团公司第十研究所 | Power amplifier's power detection circuitry |
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|---|---|
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