CN117210799A - Chemical source introduction system, chemical source introduction method and thin film deposition equipment - Google Patents

Abstract

The invention discloses a chemical source introduction system, a chemical source introduction method and a thin film deposition device. The importing system includes: a chemical source chamber storing a liquid chemical source therein; one end of the first pipeline is connected with the chemical source cavity, and carrier gas is introduced into the chemical source cavity; and one end of the second pipeline is connected with the chemical source cavity, the other end of the second pipeline is connected with the reaction cavity so as to convey the liquid chemical source into the reaction cavity through carrier gas for deposition reaction, and the introducing system further comprises: the third pipeline group comprises a third main pipeline and a third branch pipeline, the third branch pipeline is communicated with the first pipeline, the second pipeline and the third main pipeline, and purge gas continuously circulates in the third main pipeline so that after carrier gas carrying a liquid chemical source is sent into the reaction cavity, the carrier gas continuously introduced enters the third main pipeline through the third branch pipeline and is ejected out of the third main pipeline by the purge gas. The invention can increase the proportion of chemical source reactants, promote the deposition rate of deposition reaction, reduce particles and improve the stability of the particles, thus obtaining better process performance.

Description

Chemical source introduction system, chemical source introduction method and thin film deposition equipment

Technical Field

The present invention relates to the technical field of semiconductor devices, and in particular, to a chemical source introduction system, a chemical source introduction method, a thin film deposition device, and a computer readable storage medium.

Background

Atomic layer deposition (Atomic Layer Deposition, ALD) is a common technique for coating films. A complete ALD cycle can be divided into four steps: the first step is to introduce a first precursor chemical source into the reaction chamber to perform a chemical adsorption reaction on the exposed substrate surface, the second step is to purge the remaining unreacted first precursor chemical source through a carrier gas, the third step is to introduce a second precursor chemical source into the reaction chamber to perform a chemical reaction with the first precursor chemical source, and the fourth step is to purge the remaining unreacted precursor and byproducts out of the reaction chamber by introducing the carrier gas.

In the existing atomic layer deposition coating equipment, carrier gas carrying a precursor chemical source is introduced into a reaction cavity in the four-step reaction process of ALD circulation, but in the actual process, the carrier gas has a relatively substantial effect only in the first-step reaction, and the effect of the carrier gas is not great in the later steps. However, the carrier gas introduced into the reaction chamber increases the partial pressure of the gas introduced into the reaction chamber, so that the concentration ratio of the chemical source of the second precursor introduced into the reaction chamber in the third step is reduced, the deposition reaction rate is affected, particle pollution is easily generated, and the deposition process performance is affected.

In order to solve the above-mentioned problems in the prior art, there is a need in the art for a chemical source introduction technique that can reduce the partial pressure of the gas entering the reaction chamber, increase the concentration ratio of the precursor chemical source, increase the deposition rate of the deposition reaction, reduce particles and improve particle stability, and achieve more excellent process performance.

Disclosure of Invention

The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a chemical source introduction system, a chemical source introduction method, a computer-readable storage medium, and a thin film deposition apparatus, which can reduce partial pressure of gas entering a reaction chamber, increase concentration ratio of a precursor chemical source, increase deposition rate of a deposition reaction, reduce particles, improve particle stability, and obtain more excellent process performance.

Specifically, the chemical source introduction system provided according to the first aspect of the present invention includes: a chemical source chamber storing a liquid chemical source therein; one end of the first pipeline is connected to the chemical source cavity so as to introduce carrier gas into the chemical source cavity; and one end of the second pipeline is connected with the chemical source cavity, the other end of the second pipeline is connected with the reaction cavity, so that the liquid chemical source is conveyed into the reaction cavity for deposition reaction through the carrier gas, and the introducing system further comprises: the third pipeline group comprises a third main pipeline and a third branch pipeline, the third branch pipeline is communicated with the first pipeline, the second pipeline and the third main pipeline, and purge gas continuously circulates in the third main pipeline, so that after carrier gas carrying a liquid chemical source is sent into the reaction cavity, the carrier gas which is continuously introduced enters the third main pipeline through the third branch pipeline and is ejected out of the third main pipeline by the purge gas.

Further, in some embodiments of the present invention, one end of the third main pipe is connected to a purge gas source to continuously introduce the purge gas into the third main pipe, and the other end of the third main pipe is connected to an air pump to accelerate the flow rates of the purge gas and the carrier gas in the third main pipe.

Further, in some embodiments of the invention, the purge gas comprises an inert gas.

Further, in some embodiments of the present invention, the first pipeline includes a first valve for controlling the introduction of the carrier gas in the chemical source chamber, the second pipeline includes a second valve for controlling the discharge of the carrier gas carrying the liquid chemical source in the chemical source chamber, and a third valve for controlling the introduction of the carrier gas carrying the liquid chemical source in the reaction chamber.

Further, in some embodiments of the present invention, a fourth valve is included in the third branch on the first segment of the branch connecting the first line and the second line, and a fifth valve is included in the second segment of the third branch connecting the second line and the third main line, so as to control the carrier gas continuously introduced into the third main line.

Furthermore, the method for introducing a chemical source according to the second aspect of the present invention includes the steps of: introducing carrier gas into the chemical source cavity through a first pipeline, wherein a first chemical source is stored in the chemical source cavity; introducing the carrier gas carrying the first chemical source into a reaction chamber through a second pipeline; continuing to introduce the carrier gas, and changing the flow path of the carrier gas to flow to the outside through a third pipeline group; and introducing a second chemical source into the reaction cavity to perform chemical reaction with the first chemical source.

Further, in some embodiments of the present invention, the third pipe group includes a third main pipe and a third branch pipe, and the step of continuing to feed the carrier gas and changing a flow path of the carrier gas to flow to the outside through the third pipe group includes: continuing to introduce the carrier gas into the first pipeline; adjusting the flow path of the carrier gas to the third branch and flowing to the third main pipeline via the third branch, wherein the third branch is communicated with the first pipeline, the second pipeline and the third main pipeline; and continuously introducing purge gas into the third main pipeline so that the purge gas ejects the carrier gas in the third main pipeline out of the third main pipeline.

Further, in some embodiments of the present invention, an outlet end of the third main pipe is connected to an air pump, and the step of continuously introducing purge gas into the third main pipe so that the purge gas ejects the carrier gas in the third main pipe out of the third main pipe includes: continuously introducing the purge gas into the inlet end of the third main pipeline; and opening the outlet end of the third main pipeline to be connected with an air pump so as to accelerate the flow rates of the purge gas and the carrier gas in the third main pipeline.

Further, the above-described computer-readable storage medium according to the third aspect of the present invention has stored thereon computer instructions. The computer instructions, when executed by a processor, implement the method for introducing a chemical source as described above provided in the second aspect of the present invention.

Further, the thin film deposition apparatus according to the fourth aspect of the present invention includes: a reaction chamber in which a wafer is placed; and the chemical source introducing system is used for introducing a first chemical source and a second chemical source into the reaction cavity so as to perform film deposition reaction on the surface of the wafer.

Drawings

The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.

FIG. 1 shows a schematic diagram of a chemical source introduction system provided by the prior art;

FIG. 2 illustrates a schematic diagram of a chemical source introduction system provided in accordance with some embodiments of the present invention;

FIG. 3A is a schematic diagram illustrating a chemical source introduction process provided in accordance with some embodiments of the present invention;

FIG. 3B illustrates a schematic diagram of a chemical source derivation reaction chamber provided in accordance with some embodiments of the present invention; and

FIG. 4 illustrates a flow chart of a method of chemical source introduction provided in accordance with some embodiments of the present invention.

Reference numerals

10. 20 chemical source introduction system;

101. 201 chemical source chamber;

111. 211 a first line;

112. 212 a second line;

113. a branch;

121. 221 first valve;

122. 222 a second valve;

123. 223 third valve;

130. 260 carrier gas;

140. 240 reaction chamber;

230. a third pipeline group;

231. a third main line;

232. a third branch;

2321. a first segment of branches;

2322. a first segment of branches;

224. a fourth valve;

225. a fifth valve;

250. a purge gas; and

steps S410 to S440.

Detailed Description

Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.

In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.

In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.

As described above, the existing atomic layer deposition coating equipment introduces carrier gas carrying the precursor chemical source into the reaction chamber during the four-step reaction process of ALD cycle. Referring specifically to fig. 1, fig. 1 shows a schematic diagram of a chemical source introduction system provided in the prior art. As shown in fig. 1, the chemical source introduction system 10 of the prior art includes a chemical source chamber 101, a first pipe 111, a second pipe 112, a branch 113, a first valve 121, a second valve 122, and a third valve 123. One end of the first pipeline 111 is connected with the chemical source cavity 101 and is used for introducing the carrier gas 130. One end of the second pipe 112 is connected to the chemical source chamber 101, and the other end is connected to the reaction chamber 140. The first line 111 is connected to the second line 112 by a branch 113.

During a complete ALD cycle, during the first step of the ALD cycle, the first valve 121 and the third valve 123 are opened and the second valve 122 is closed. An external carrier gas 130 enters the chemical source chamber 101 via the first line 111 and delivers a first precursor chemical source in the chemical source chamber 101 into the reaction chamber 140 via the carrier gas 130 for deposition reactions. Thereafter, in the second step of the ALD cycle, the first valve 121 and the third valve 123 are closed and the second valve 122 is opened, changing the flow path of the carrier gas so that the carrier gas 130 can flow to the second line 112 via the branch 113 to effect purging of the remaining first chemical source in the line. In the third step of the ALD cycle, a second precursor chemical source is introduced into the reaction chamber 140 to chemically react with the first precursor chemical source. Finally, the first valve 121 and the third valve 123 are opened and the second valve 122 is closed to continue the flow of carrier gas 130 into the chemical source introduction system 10 to purge the piping of unreacted first precursor chemical source, byproducts, and the like.

It can be seen that during the actual four-step reaction of the ALD cycle, the carrier gas 130 has a relatively substantial effect, i.e., the first precursor chemical source in the chemical source chamber 101 is brought into the reaction chamber 140 only during the first step of the ALD cycle. In this later step, the carrier gas 130 plays a small role, but in the subsequent step, the carrier gas 130 introduced into the reaction chamber 140 increases the partial pressure of the gas introduced into the reaction chamber 140, so that the concentration ratio of the chemical source of the second precursor introduced into the reaction chamber 140 is reduced, which affects the rate of the deposition reaction, and particle contamination is easily generated, which affects the process performance of the deposition.

In order to solve the above problems in the prior art, the present invention provides a chemical source introduction system, a chemical source introduction method, a computer readable storage medium, and a thin film deposition apparatus, which can reduce partial pressure of gas entering a reaction chamber, increase concentration ratio of a precursor chemical source, increase deposition rate of a deposition reaction, reduce particles and improve particle stability, and obtain more excellent process performance.

In some non-limiting embodiments, the chemical source introduction system provided in the first aspect of the present invention may be configured in the thin film deposition apparatus provided in the fourth aspect of the present invention, and the chemical source introduction method provided in the second aspect of the present invention may be implemented by the chemical source introduction system provided in the first aspect of the present invention. In some non-limiting embodiments, the method for introducing a chemical source according to the second aspect of the present invention may be stored in the computer readable storage medium according to the third aspect of the present invention via a software program, where computer instructions are stored, and when the computer instructions are executed by a processor, the method for introducing a chemical source according to the second aspect of the present invention may be implemented.

Referring to fig. 2, fig. 2 is a schematic diagram illustrating a chemical source introduction system according to some embodiments of the present invention.

As shown in fig. 2, in some embodiments of the invention, chemical source introduction system 20 may include: a chemical source chamber 201, inside which a liquid chemical source can be stored; a first pipe 211 having one end connectable to the chemical source chamber 201 to introduce a carrier gas 260 into the chemical source chamber 201; a second pipe 212, one end of which may be connected to the chemical source chamber 201 and the other end of which may be connected to the reaction chamber 240, to transfer the liquid chemical source into the reaction chamber 240 via a carrier gas 260 for deposition reaction.

In particular, referring to FIG. 3A in combination, FIG. 3A illustrates a schematic diagram of chemical source introduction into a reaction chamber provided in accordance with some embodiments of the present invention.

As shown in fig. 2 and 3A, the first pipe 211 may include a first valve 221 thereon, and the first valve 221 is opened and closed to control the introduction of the carrier gas 260 in the chemical source chamber 201. Further, the flow rate, the flow velocity, and the like of the carrier gas 260 introduced can also be adjusted by adjusting the opening degree of the first valve 221. The second pipeline 212 may include a second valve 222 and a third valve 223, where the second valve 222 may be used to control the delivery of the carrier gas 260 carrying the liquid chemical source in the chemical source chamber 201, and the third valve 223 may be used to control the introduction of the carrier gas carrying the liquid chemical source in the reaction chamber 240. Further, in some embodiments, the flow rate, flow velocity, etc. of the carrier gas 260 flowing into the liquid chemical source carried in the second pipe 212 may be adjusted by adjusting the opening of the second valve 222, and the flow rate, flow velocity, etc. of the carrier gas 260 flowing into the liquid chemical source in the reaction chamber 240 may be adjusted by adjusting the opening of the third valve 223.

Further, as shown in FIG. 2, the chemical source introduction system 20 may further include: and a third pipe set 230. The third line set 230 may include a third main line 231 and a third branch 232. The third branch 232 may communicate with the first line 211, the second line 212, and the third main line 231. Further, in the third branch 232, a fourth valve 224 may be included in the first segment branch 2321 connecting the first line 211 and the second line 212, and a fifth valve 225 may be included in the second segment branch 2322 connecting the second line 212 and the third main line 231. The flow and velocity of the carrier gas 260 into the third leg 232 may be controlled by the fourth valve 224 and the fifth valve 225, respectively.

Referring to fig. 3B, fig. 3B is a schematic diagram illustrating a chemical source removal process from a reaction chamber according to some embodiments of the present invention.

After the first step of the ALD cycle is completed, the flow path of the carrier gas 260 may be changed into the third main line 231 by the third branch 232, and the fourth valve 224 and the fifth valve 225 thereon, as shown in FIG. 3B. Further, after the carrier gas 260 carrying the liquid chemical source is introduced into the reaction chamber 240, the carrier gas 260 changes the flow path, and enters the third pipeline group 230 to purge the pipelines (for example, the third branch 232 and the parts of the first pipeline 211 and the second pipeline 212 may be included) so as to purge the residual chemical source in the pipelines out of the chemical source introducing system 20, and the purge gas 250 may be continuously introduced into the third main pipeline 231, so that the continuously introduced carrier gas 260 may be carried by the purge gas 250 to eject the third main pipeline 231 when flowing to the third main pipeline 231.

Specifically, one end of the third main pipe 231 may be connected to a purge gas source (not shown in fig. 3B) for continuously introducing the purge gas 250 into the third main pipe 231, so as to keep the purge gas 250 continuously flowing in the third main pipe 231. Alternatively, the purge gas 250 may include an inert gas, such as nitrogen, argon, and the like.

Further, in some preferred embodiments, the other end of the third main pipe 231 may be connected to an air pump (not shown in fig. 3B). The air pump is used for exhausting the interior of the third main pipeline 231, so that the flow rates of the purge gas 250 and the carrier gas 260 in the third main pipeline 231 can be further accelerated, and the control force of the purge gas 250 on the flow direction of the carrier gas 260 can be improved, namely, the top force of the purge gas 250 for pushing the carrier gas 260 to the outside of one end of the third main pipeline 231 is increased, the carrier gas 260 is prevented from flowing back, the carrier gas 260 is continuously reversely flowed to the third branch pipeline 232, even the second pipeline 212, and the gas partial pressure and the concentration of the liquid chemical source in the reaction cavity 240 are finally affected.

In some alternative embodiments, the chemical source introduction system 20 described above may be configured in a thin film deposition apparatus. The thin film deposition apparatus may include: a reaction chamber 240 and a chemical source introduction system 20. The wafer is placed inside the reaction chamber 240. The first chemical source and/or the second chemical source may be introduced into reaction chamber 240 via chemical source introduction system 20. Alternatively, in some other embodiments, a second chemical source may be included in chemical source introduction system 20. Further, in some preferred embodiments, a plurality of different types of chemical sources may be included in chemical source introduction system 20, for example, a plurality of chemical source chambers 201 may be included, thereby enabling the introduction of a plurality of chemical sources into reaction chamber 240. The first chemical source and the second chemical source introduced into the reaction chamber 240 may perform a thin film deposition reaction on the surface of the wafer.

The principle of operation of the chemical source introduction system 20 described above will be described below in connection with some embodiments of chemical source introduction methods. It will be appreciated by those skilled in the art that these examples of methods of introducing chemical sources are merely some non-limiting embodiments of the present invention and are intended to clearly illustrate the general concepts of the present invention and to provide some embodiments that are convenient for public implementation, and are not intended to limit the overall manner or function of the chemical source introduction system 20. Similarly, the chemical source introduction system 20 is only one non-limiting embodiment provided by the present invention and is not limited by the nature of the process steps involved in the chemical source introduction method.

Referring to fig. 4, fig. 4 illustrates a flow chart of a method of introducing a chemical source according to some embodiments of the present invention.

As shown in fig. 4, in some embodiments of the present invention, the chemical source introduction method may include step S410: and introducing carrier gas into the chemical source cavity through the first pipeline.

Specifically, as may be seen in connection with FIG. 3A, a first chemical source may be stored within the chemical source chamber 201. The first valve 221, the second valve 222, the third valve 223 are opened, and the fourth valve 224 and the fifth valve 225 are closed, so that the carrier gas 260 can be introduced into the chemical source chamber 201 through one end of the first pipe 211.

As shown in fig. 4, the chemical source introduction method may further include step S420: a carrier gas carrying the first chemical source is introduced into the reaction chamber via a second conduit.

Specifically, as shown in fig. 3A, the carrier gas 260 introduced into the chemical source chamber 201 may carry the first chemical source at a certain flow rate, and flow out of the second pipeline 212 and into the reaction chamber 240, where the carrier gas 260 only functions as a carrier band and does not react with the chemical source of the carrier band.

Wafers may be placed within the reaction chamber 240. In an ideal ALD growth process, deposited films may be formed by selectively alternating different chemical source precursors, i.e., a first chemical source and a second chemical source, exposed to the surface of the wafer, chemisorbed and reacted at the wafer surface.

As shown in fig. 4, the chemical source introduction method may further include step S430: and continuing to introduce the carrier gas, and changing the flow path of the carrier gas to flow to the outside through the third pipeline group.

After the above steps of the ALD cycle are completed, as shown in fig. 3B, the first valve 221, the second valve 222, the third valve 223 may be closed and the fourth valve 224 and the fifth valve 225 may be opened, and the carrier gas 260 may be continuously introduced into the first pipe 211, thereby changing the flow path of the carrier gas 260 to the outside through the third pipe group 230.

Specifically, after the carrier gas 260 carrying the liquid chemical source is introduced into the reaction chamber 240, the carrier gas 260 changes the flow path, and enters the third pipe group 230 to purge the pipes (for example, the third branch 232 and the parts of the first pipe 211 and the second pipe 212 may be included) so as to purge the residual chemical source in these pipes out of the chemical source introducing system 20, the purge gas 250 may be continuously introduced into the third main pipe 231, so that the continuously introduced carrier gas 260 may be carried by the purge gas 250 to eject the third main pipe 231 when flowing to the third main pipe 231.

One end of the third main pipe 231 may be connected to a purge gas source (not shown in fig. 3B) for continuously introducing the purge gas 250 into the third main pipe 231, so as to maintain the purge gas 250 continuously flowing in the third main pipe 231. Alternatively, the purge gas 250 may include an inert gas, such as nitrogen, argon, and the like.

Further, in some preferred embodiments, the other end of the third main pipe 231 may be connected to an air pump (not shown in fig. 3B). The air pump is used for exhausting the interior of the third main pipeline 231, so that the flow rates of the purge gas 250 and the carrier gas 260 in the third main pipeline 231 can be further accelerated, and the control force of the purge gas 250 on the flow direction of the carrier gas 260 can be improved, namely, the top force of the purge gas 250 for pushing the carrier gas 260 to the outside of one end of the third main pipeline 231 is increased, the carrier gas 260 is prevented from flowing back, the carrier gas 260 is continuously reversely flowed to the third branch pipeline 232, even the second pipeline 212, and the gas partial pressure and the concentration of the liquid chemical source in the reaction cavity 240 are finally affected.

As shown in fig. 4, the chemical source introduction method may further include step S440: a second chemical source is introduced into the reaction chamber to chemically react with the first chemical source.

In some embodiments, another set of chemical source introduction systems 20 may be provided to introduce a second chemical source into the reaction chamber 240. In other embodiments, a second chemical source chamber may also be provided in the original chemical source introduction system 20 to provide a second chemical source into the reaction chamber 240. The first chemical source and the second chemical source within the reaction chamber 240 perform a chemical reaction of thin film deposition on the wafer surface.

While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.

In summary, the present invention provides a chemical source introducing system, a chemical source introducing method, and a thin film deposition apparatus, wherein a third pipeline group is used to adjust and change a flow path of a carrier gas in a subsequent step of an ALD cycle reaction to guide the carrier gas without carrying the chemical source to the outside, so as to reduce partial pressure of the gas entering a reaction chamber, increase concentration ratio of a precursor chemical source, increase deposition rate of a deposition reaction, reduce particles, improve particle stability, and obtain more excellent process performance. On the basis, the chemical source introduction system provided by the invention also has a structure for preventing carrier gas from flowing backwards, so that adverse effects caused by carrier gas flowing backwards are avoided.

The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A chemical source introduction system comprising: a chemical source chamber storing a liquid chemical source therein; one end of the first pipeline is connected to the chemical source cavity so as to introduce carrier gas into the chemical source cavity; and a second pipeline, one end of which is connected with the chemical source cavity, and the other end of which is connected with the reaction cavity, so that the liquid chemical source is conveyed into the reaction cavity to carry out deposition reaction by the carrier gas, and the introduction system is characterized by further comprising:

the third pipeline group comprises a third main pipeline and a third branch pipeline, the third branch pipeline is communicated with the first pipeline, the second pipeline and the third main pipeline, and purge gas continuously circulates in the third main pipeline, so that after carrier gas carrying a liquid chemical source is sent into the reaction cavity, the carrier gas which is continuously introduced enters the third main pipeline through the third branch pipeline and is ejected out of the third main pipeline by the purge gas.

2. The intake system of claim 1, wherein one end of the third main conduit is connected to a source of purge gas to continuously introduce the purge gas into the third main conduit, and the other end of the third main conduit is connected to an air pump to accelerate the flow rates of the purge gas and the carrier gas in the third main conduit.

3. The lead-in system of claim 2, wherein the purge gas comprises an inert gas.

4. The introduction system of claim 1, wherein the first conduit includes a first valve for controlling the introduction of the carrier gas in the chemical source chamber, and the second conduit includes a second valve for controlling the delivery of the carrier gas carrying the liquid chemical source in the chemical source chamber and a third valve for controlling the introduction of the carrier gas carrying the liquid chemical source in the reaction chamber.

5. The intake system of claim 4, wherein a first segment of the third branch connecting the first line and the second line includes a fourth valve, and a second segment of the third branch connecting the second line and the third main line includes a fifth valve for controlling the continued passage of the carrier gas into the third main line.

6. A method for introducing a chemical source, comprising the steps of:

introducing carrier gas into the chemical source cavity through a first pipeline, wherein a first chemical source is stored in the chemical source cavity;

introducing the carrier gas carrying the first chemical source into a reaction chamber through a second pipeline;

continuing to introduce the carrier gas, and changing the flow path of the carrier gas to flow to the outside through a third pipeline group; and

and introducing a second chemical source into the reaction cavity to perform chemical reaction with the first chemical source.

7. The method of introducing the carrier gas according to claim 6, wherein the third line group includes a third main line and a third branch line, and the step of continuing to introduce the carrier gas and changing a flow path of the carrier gas to flow to the outside through the third line group includes:

continuing to introduce the carrier gas into the first pipeline;

adjusting the flow path of the carrier gas to the third branch and flowing to the third main pipeline via the third branch, wherein the third branch is communicated with the first pipeline, the second pipeline and the third main pipeline; and

continuously introducing purge gas into the third main pipeline to enable the purge gas to eject the carrier gas in the third main pipeline out of the third main pipeline.

8. The method of introducing according to claim 7, wherein an outlet end of the third main pipe is connected to an air pump, and the step of continuously introducing purge gas into the third main pipe so that the purge gas ejects the carrier gas in the third main pipe out of the third main pipe includes:

continuously introducing the purge gas into the inlet end of the third main pipeline;

and opening the outlet end of the third main pipeline to be connected with an air pump so as to accelerate the flow rates of the purge gas and the carrier gas in the third main pipeline.

9. A computer readable storage medium having stored thereon computer instructions which, when executed by a processor, implement a method of importing a chemical source according to any one of claims 6 to 8.

10. A thin film deposition apparatus, comprising:

a reaction chamber in which a wafer is placed; and

and the chemical source introducing system is used for introducing a first chemical source and a second chemical source into the reaction cavity so as to perform film deposition reaction on the surface of the wafer.