CN117202079A - Preparation method of silicon microphone - Google Patents
Preparation method of silicon microphone Download PDFInfo
- Publication number
- CN117202079A CN117202079A CN202311151896.9A CN202311151896A CN117202079A CN 117202079 A CN117202079 A CN 117202079A CN 202311151896 A CN202311151896 A CN 202311151896A CN 117202079 A CN117202079 A CN 117202079A
- Authority
- CN
- China
- Prior art keywords
- wafer
- chip
- substrate
- film
- anisotropic conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 57
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims abstract description 30
- 229910052737 gold Inorganic materials 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000002923 metal particle Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 6
- 230000001070 adhesive effect Effects 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 34
- 238000004140 cleaning Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 239000003344 environmental pollutant Substances 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 6
- 238000003698 laser cutting Methods 0.000 claims description 6
- 231100000719 pollutant Toxicity 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 239000000356 contaminant Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000012945 sealing adhesive Substances 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The application discloses a preparation method of a silicon microphone, which comprises the following steps: s1, gold ball planting on a wafer: welding gold balls on a bonding pad of each chip on the wafer, which needs to be led out of a circuit, so that metal particles in the subsequent anisotropic conductive film are conveniently stressed and conducted; s2, cutting a wafer: separating individual chips on the wafer; s3, wafer film pouring: changing the circuit surface of the chip to enable the circuit to face downwards, so that the flip chip is convenient to flip; s4, sticking an anisotropic conductive film on the substrate; s5, die bonding: attaching the chip to the substrate by using a die bonder; s6, pressurizing, heating and solidifying to enable the anisotropic conductive film to melt, extruding metal particles to complete electric connection of the chip bonding pad and the substrate bonding pad, and using the anisotropic conductive film and the flip-chip technology to complete electric connection between the chip and the substrate, so that the yield and the production efficiency of the product are improved, gold wire use is reduced, the cost is reduced, and the anisotropic conductive film is used for replacing the die bonding adhesive, so that the reliability of the product is improved, the sealing adhesive process is cancelled, and the cost is further reduced.
Description
Technical Field
The application relates to the technical field of silicon microphone manufacturing, in particular to a preparation method of a silicon microphone.
Background
Silicon microphone fabrication is a process in which silicon materials are used to fabricate microphones. A silicon microphone is a device that converts an acoustic signal into an electrical signal using the characteristics of a silicon crystal. The preparation process of the silicon microphone relates to the processing of silicon materials and the manufacturing of fine structures, and the silicon microphone can be applied to the fields of audio equipment, communication equipment, sensors and the like.
The front section preparation flow of the traditional silicon microphone is as follows: wafer dicing- > die bond-spotting- > die bond- > baking- > gold wire BONDING- > encapsulation;
the traditional silicon microphone uses gold wires to connect the circuit between the chip and the substrate, the gold wires use noble metal, the gold wires are welded to generate virtual welding, and the vibration wire arc highly influences the performance and the reliability of the product, so that a preparation method of the silicon microphone is needed.
Disclosure of Invention
The application aims to provide a preparation method of a silicon microphone, which uses an anisotropic conductive film and a flip-chip technology to complete the electrical connection between a chip and a substrate, improves the yield and the production efficiency of products, reduces the use of gold wires and reduces the cost.
In order to achieve the above purpose, the present application provides the following technical solutions: a preparation method of a silicon microphone comprises the following steps:
s1, gold ball planting on a wafer: welding gold balls on a bonding pad of each chip on the wafer, which needs to be led out of a circuit, so that metal particles in the subsequent anisotropic conductive film are conveniently stressed and conducted;
s2, cutting a wafer: separating individual chips on the wafer;
s3, wafer film pouring: changing the circuit surface of the chip to enable the circuit to face downwards, so that the flip chip is convenient to flip;
s4, sticking anisotropic conductive films on the substrate: attaching an anisotropic conductive film to the substrate through the positioning hole;
s5, die bonding: attaching the chip to the substrate by using a die bonder;
s6, pressurizing, heating and curing: and heating the substrate with the wafer attached to melt the anisotropic conductive film, so that metal particles in the film are extruded to complete the electrical connection between the chip bonding pad and the substrate bonding pad.
Preferably, in S1, the wafer gold-implanting ball includes the following steps:
a1, preparing: preparing a wafer and a metal material which need to be subjected to gold ball implantation;
a2, surface treatment: cleaning and treating the surface of the wafer to remove pollutants and an oxide layer, and ensuring good contact between the metal ball and the surface of the wafer;
a3, coating a protective layer: coating a protective layer on the wafer to protect other parts of the chip from being affected by the gold ball implanting process;
a4, planting gold balls: using a ball-implanting machine to implant a metal material into the positions of the chip electrodes on the wafer at a certain temperature and under a certain pressure, wherein the ball-implanting machine can heat the metal material to a molten state and push the metal material into the surface of the wafer through air pressure to form metal balls;
a5, cooling and solidifying: after the ball is planted, the wafer needs to be cooled, so that the metal ball is solidified and reliably connected with the surface of the wafer;
a6, checking and testing: and (5) checking and testing the wafer after the gold balls are planted to ensure the quality of the metal balls and the reliability of electrical connection.
Preferably, in S2, the wafer dicing includes the steps of:
b1, chip positioning: placing the wafer implanted with the gold balls on cutting equipment, positioning the chip, and ensuring the accuracy of the cutting position;
b2, cutting the wafer in a mechanical cutting or laser cutting mode according to the requirements of the chip and the characteristics of the cutting process;
b3, cleaning and checking: after dicing is completed, the diced chips are cleaned to remove chips and contaminants generated during dicing.
Preferably, in S3, the wafer film-chamfering includes the steps of:
c1, cleaning: cleaning the back of the wafer to remove pollutants and an oxide layer so as to ensure that the reverse film material can be well attached to the back of the wafer;
and C2, film pouring coating: uniformly coating the reverse film material on the back surface of the wafer by using a coating machine or other coating equipment;
and C3, drying: drying the coated wafer to remove the solvent or moisture in the film pouring material, so that the film pouring material is solidified and attached on the back surface of the wafer;
and C4, quality inspection: and (3) carrying out quality inspection on the wafer with the inverted film, and ensuring uniformity and adhesive force of the inverted film and cleanness and smoothness of the back surface.
Preferably, in S4, the substrate attaching the anisotropic conductive film includes the steps of:
d1, coating: coating an anisotropic conductive film on a contact area of the electronic component and the substrate;
d2, laminating: the electronic component and the substrate are placed together and a suitable pressure and temperature are applied to form a reliable electrical connection between the anisotropic conductive film and the two.
Preferably, in S5, the die bonding includes the steps of:
e1, coating a die bonding material: uniformly coating a die bonding material on the surface of a chip or a substrate by using a die bonding machine, wherein the die bonding material is set to be a curing glue or a solder;
e2, chip positioning: the chip is accurately positioned on the substrate to ensure proper location and alignment of the chip.
Preferably, in S6, before the solidification by heating under pressure, the material to be solidified is uniformly coated on the surface of the object, the substrate is heated by a heating device to melt the anisotropic conductive film, the substrate is placed in a pressurizing device, a proper pressure is applied to flatten the metal particles, and the extruded metal particles are conducted in the Z direction.
Preferably, in S2, the mechanical dicing is to use a dicing blade to dice the wafer into a plurality of chips, the dicing blade is usually made of a hard material, and the wafer is diced with the aid of a mechanical force and a dicing liquid;
the laser cutting is realized by using the high energy density of laser beam and destroying the wafer material through instant thermal expansion and thermal stress.
Compared with the prior art, the application has the beneficial effects that:
the application uses anisotropic conductive film and flip technology to complete the electrical connection between the chip and the substrate, improves the product yield and production efficiency, reduces gold wire use, reduces cost, and improves the reliability of the product by replacing die bond adhesive with anisotropic conductive film, cancels the adhesive sealing process, and further reduces cost.
Drawings
FIG. 1 is a process flow diagram of the present application;
FIG. 2 is a flow chart of the gold ball implantation process of the wafer of the present application;
FIG. 3 is a flow chart of the wafer dicing of the present application;
FIG. 4 is a flow chart of the wafer inversion method of the present application;
FIG. 5 is a flow chart of the anisotropic conductive film attached to the substrate of the present application;
FIG. 6 is a flow chart of die bonding according to the present application;
FIG. 7 is an assembled structure diagram of a substrate, bonding pad, chip, gold ball and anisotropic conductive film of the present application;
fig. 8 is a schematic diagram of the operation of the anisotropic conductive film of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1-8, the present application provides a technical solution: a preparation method of a silicon microphone comprises the following steps:
s1, gold ball planting on a wafer: welding gold balls on a bonding pad of each chip on the wafer, which needs to be led out of a circuit, so that metal particles in the subsequent anisotropic conductive film are conveniently stressed and conducted;
in S1, the wafer gold-implanting ball comprises the following steps:
a1, preparing: preparing a wafer and a metal material which need to be subjected to gold ball implantation; the metal material is generally tin, lead, silver or the like.
A2, surface treatment: cleaning and treating the surface of the wafer to remove pollutants and an oxide layer, and ensuring good contact between the metal ball and the surface of the wafer;
a3, coating a protective layer: coating a protective layer on the wafer to protect other parts of the chip from being affected by the gold ball implanting process;
a4, planting gold balls: using a ball-implanting machine to implant a metal material into the positions of the chip electrodes on the wafer at a certain temperature and under a certain pressure, wherein the ball-implanting machine can heat the metal material to a molten state and push the metal material into the surface of the wafer through air pressure to form metal balls;
a5, cooling and solidifying: after the ball is planted, the wafer needs to be cooled, so that the metal ball is solidified and reliably connected with the surface of the wafer;
a6, checking and testing: and (5) checking and testing the wafer after the gold balls are planted to ensure the quality of the metal balls and the reliability of electrical connection.
The wafer gold ball technology is widely applied to semiconductor packaging and chip packaging, and can realize the electrical connection between the high-density and high-reliability chip and the substrate.
S2, cutting a wafer: separating individual chips on the wafer;
in S2, the wafer dicing includes the steps of:
b1, chip positioning: placing the wafer implanted with the gold balls on cutting equipment, positioning the chip, and ensuring the accuracy of the cutting position;
b2, cutting the wafer in a mechanical cutting or laser cutting mode according to the requirements of the chip and the characteristics of the cutting process;
b3, cleaning and checking: after dicing is completed, the diced chips are cleaned to remove chips and contaminants generated during dicing. At the same time, the chip is inspected and tested to ensure the quality of the cut and the usability of the chip.
The stability and accuracy of the wafer dicing process have an important impact on the quality and reliability of the chip. Care must be taken during the dicing process to maintain the sharpness and stability of the dicing tool, as well as to control the use of the dicing fluid and cleaning operations to ensure accuracy of dicing and chip integrity.
In S2, the mechanical dicing is to use a dicing blade to dice the wafer into a plurality of chips, the dicing blade is usually made of hard material, and the wafer is diced with the aid of mechanical force and dicing liquid;
the laser cutting is realized by using the high energy density of laser beam and destroying the wafer material through instant thermal expansion and thermal stress.
S3, wafer film pouring: changing the circuit surface of the chip to enable the circuit to face downwards, so that the flip chip is convenient to flip;
this step is primarily to prevent contamination and damage to the backside and to provide adhesion for better handling of the wafer in subsequent process steps.
In S3, the wafer film-chamfering includes the steps of:
c1, cleaning: cleaning the back of the wafer to remove pollutants and an oxide layer so as to ensure that the reverse film material can be well attached to the back of the wafer; commonly used reverse film materials include polymers or silica gel, and the like.
And C2, film pouring coating: uniformly coating the reverse film material on the back surface of the wafer by using a coating machine or other coating equipment; the thickness of the coating can be controlled as desired.
And C3, drying: drying the coated wafer to remove the solvent or moisture in the film pouring material, so that the film pouring material is solidified and attached on the back surface of the wafer;
and C4, quality inspection: and (3) carrying out quality inspection on the wafer with the inverted film, and ensuring uniformity and adhesive force of the inverted film and cleanness and smoothness of the back surface.
The choice of the film backing material and the control of the film backing thickness need to be adjusted according to specific application and process requirements.
S4, sticking anisotropic conductive films on the substrate: attaching an anisotropic conductive film to the substrate through the positioning hole;
in S4, the substrate attaching the anisotropic conductive film includes the steps of:
d1, coating: coating an anisotropic conductive film on a contact area of the electronic component and the substrate; typically by coating, printing or coating.
D2, laminating: the electronic component and the substrate are placed together and a suitable pressure and temperature are applied to form a reliable electrical connection between the anisotropic conductive film and the two.
S5, die bonding: attaching the chip to the substrate by using a die bonder;
in S5, the die bonding includes the steps of:
e1, coating a die bonding material: uniformly coating a die bonding material on the surface of a chip or a substrate by using a die bonding machine, wherein the die bonding material is set to be a curing glue or a solder;
e2, chip positioning: the chip is accurately positioned on the substrate to ensure proper location and alignment of the chip.
The purpose of die bonding is to ensure reliable contact between the chip and the submount to achieve current and heat transfer and to provide mechanical support and protection. The technological parameters of die bonding need to be adjusted according to the materials and the sizes of the chip and the base so as to ensure the reliability and the consistency of die bonding.
S6, pressurizing, heating and curing: and heating the substrate with the wafer attached to melt the anisotropic conductive film, so that metal particles in the film are extruded to complete the electrical connection between the chip bonding pad and the substrate bonding pad.
Pressure heat curing can increase the hardness, strength and heat resistance of the material and ensure a strong bond between the coating or adhesive layer and the substrate.
In S6, before pressurizing, heating and curing, uniformly coating a material to be cured on the surface of an object, heating the substrate by using a heating device to melt the anisotropic conductive film, placing the substrate into a pressurizing device, applying proper pressure to flatten metal particles, and conducting the extruded metal particles in the Z direction.
The application adopts the flip-chip technology: the technique of flip-chip (upside down placement) and connection with a substrate (substrate) achieves high-density, high-speed, high-reliability electrical connection by the flip-chip technique in which the electrical connection region (pad) of the chip is in direct contact with the electrical connection region (pad) on the substrate.
In completing electrical connection between the chip and the substrate using the ACF film and the flip-chip technique, a layer of ACF film is first coated on the electrical connection area (pad) of the chip and the electrical connection area (pad) on the substrate. The chip is then flip-chip placed on the substrate and appropriate temperature and pressure are applied to form a reliable electrical connection between the conductive particles in the ACF film and the chip and pads on the substrate.
The conductive particles of the ACF film have high conductivity in the vertical direction but have higher resistance in the horizontal direction, and this anisotropy allows the ACF film to form a conductive path only on the electrical connection area of the chip and the substrate, avoiding a short circuit between adjacent pads. Meanwhile, the ACF film has certain elasticity and durability, can adapt to tiny displacement and temperature change between a chip and a substrate, and ensures the reliability of electrical connection.
Before each step S1-S6 is started, one or more of the substrate, chip or wafer is cleaned to remove impurities and contaminants; and after each step S1-S6 is completed, it is also necessary to check to ensure the correctness of each operation (ensure the quality of metal balls and reliability of electrical connection, ensure the quality of dicing and usability of chips, ensure uniformity and adhesion of the inverted film, check the accuracy and adhesion of die bonding, and the contact condition between chips and pedestals, ensure curing effect and quality, check the conductive performance and reliability of connection).
Although embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the application, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A preparation method of a silicon microphone is characterized by comprising the following steps: the method comprises the following steps:
s1, gold ball planting on a wafer: welding gold balls on a bonding pad of each chip on the wafer, which needs to be led out of a circuit, so that metal particles in the subsequent anisotropic conductive film are conveniently stressed and conducted;
s2, cutting a wafer: separating individual chips on the wafer;
s3, wafer film pouring: changing the circuit surface of the chip to enable the circuit to face downwards, so that the flip chip is convenient to flip;
s4, sticking anisotropic conductive films on the substrate: attaching an anisotropic conductive film to the substrate through the positioning hole;
s5, die bonding: attaching the chip to the substrate by using a die bonder;
s6, pressurizing, heating and curing: and heating the substrate with the wafer attached to melt the anisotropic conductive film, so that metal particles in the film are extruded to complete the electrical connection between the chip bonding pad and the substrate bonding pad.
2. The method for manufacturing a silicon microphone according to claim 1, wherein: in S1, the wafer gold-implanting ball comprises the following steps:
a1, preparing: preparing a wafer and a metal material which need to be subjected to gold ball implantation;
a2, surface treatment: cleaning and treating the surface of the wafer to remove pollutants and an oxide layer, and ensuring good contact between the metal ball and the surface of the wafer;
a3, coating a protective layer: coating a protective layer on the wafer to protect other parts of the chip from being affected by the gold ball implanting process;
a4, planting gold balls: using a ball-implanting machine to implant a metal material into the positions of the chip electrodes on the wafer at a certain temperature and under a certain pressure, wherein the ball-implanting machine can heat the metal material to a molten state and push the metal material into the surface of the wafer through air pressure to form metal balls;
a5, cooling and solidifying: after the ball is planted, the wafer needs to be cooled, so that the metal ball is solidified and reliably connected with the surface of the wafer;
a6, checking and testing: and (5) checking and testing the wafer after the gold balls are planted to ensure the quality of the metal balls and the reliability of electrical connection.
3. The method for manufacturing a silicon microphone according to claim 1, wherein: in S2, the wafer dicing includes the steps of:
b1, chip positioning: placing the wafer implanted with the gold balls on cutting equipment, positioning the chip, and ensuring the accuracy of the cutting position;
b2, cutting the wafer in a mechanical cutting or laser cutting mode according to the requirements of the chip and the characteristics of the cutting process;
b3, cleaning and checking: after dicing is completed, the diced chips are cleaned to remove chips and contaminants generated during dicing.
4. The method for manufacturing a silicon microphone according to claim 1, wherein: in S3, the wafer film-chamfering includes the steps of:
c1, cleaning: cleaning the back of the wafer to remove pollutants and an oxide layer so as to ensure that the reverse film material can be well attached to the back of the wafer;
and C2, film pouring coating: uniformly coating the reverse film material on the back surface of the wafer by using a coating machine or other coating equipment;
and C3, drying: drying the coated wafer to remove the solvent or moisture in the film pouring material, so that the film pouring material is solidified and attached on the back surface of the wafer;
and C4, quality inspection: and (3) carrying out quality inspection on the wafer with the inverted film, and ensuring uniformity and adhesive force of the inverted film and cleanness and smoothness of the back surface.
5. The method for manufacturing a silicon microphone according to claim 1, wherein: in S4, the substrate attaching the anisotropic conductive film includes the steps of:
d1, coating: coating an anisotropic conductive film on a contact area of the electronic component and the substrate;
d2, laminating: the electronic component and the substrate are placed together and a suitable pressure and temperature are applied to form a reliable electrical connection between the anisotropic conductive film and the two.
6. The method for manufacturing a silicon microphone according to claim 1, wherein: in S5, the die bonding includes the steps of:
e1, coating a die bonding material: uniformly coating a die bonding material on the surface of a chip or a substrate by using a die bonding machine, wherein the die bonding material is set to be a curing glue or a solder;
e2, chip positioning: the chip is accurately positioned on the substrate to ensure proper location and alignment of the chip.
7. The method for manufacturing a silicon microphone according to claim 1, wherein: in S6, before pressurizing, heating and curing, uniformly coating a material to be cured on the surface of an object, heating the substrate by using a heating device to melt the anisotropic conductive film, placing the substrate into a pressurizing device, applying proper pressure to flatten metal particles, and conducting the extruded metal particles in the Z direction.
8. A method of manufacturing a silicon microphone according to claim 3, characterized in that: in S2, the mechanical dicing is to use a dicing blade to dice the wafer into a plurality of chips, the dicing blade is usually made of hard material, and the wafer is diced with the aid of mechanical force and dicing liquid;
the laser cutting is realized by using the high energy density of laser beam and destroying the wafer material through instant thermal expansion and thermal stress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311151896.9A CN117202079A (en) | 2023-09-07 | 2023-09-07 | Preparation method of silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311151896.9A CN117202079A (en) | 2023-09-07 | 2023-09-07 | Preparation method of silicon microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117202079A true CN117202079A (en) | 2023-12-08 |
Family
ID=88995530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311151896.9A Pending CN117202079A (en) | 2023-09-07 | 2023-09-07 | Preparation method of silicon microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117202079A (en) |
-
2023
- 2023-09-07 CN CN202311151896.9A patent/CN117202079A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7115446B2 (en) | Flip chip bonding method for enhancing adhesion force in flip chip packaging process and metal layer-built structure of substrate for the same | |
| US7554205B2 (en) | Flip-chip type semiconductor device | |
| JP5798834B2 (en) | Manufacturing method of semiconductor device | |
| CN102969264B (en) | The manufacture method of laminated semiconductor device and producing device | |
| US8569109B2 (en) | Method for attaching a metal surface to a carrier, a method for attaching a chip to a chip carrier, a chip-packaging module and a packaging module | |
| JPH06216303A (en) | Lead frame and its manufacture, and manufacture of semiconductor integrated circuit using it | |
| KR20070098623A (en) | Manufacturing method of a semiconductor device | |
| JPS63119552A (en) | Lsi chip | |
| JP2000040773A (en) | Resin-sealed semiconductor device and manufacture thereof | |
| JP2001338932A (en) | Semiconductor device and method of manufacturing semiconductor device | |
| CN102024712B (en) | Packaging structure and method for manufacturing same | |
| JPH11163006A (en) | Method for bonding pellet | |
| JP3719921B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN117202079A (en) | Preparation method of silicon microphone | |
| JP2626621B2 (en) | Method for manufacturing semiconductor device | |
| JP2000114206A (en) | Manufacture of semiconductor package | |
| JPH07106334A (en) | Method for bonding optical semiconductor device to optical substrate | |
| KR20020026854A (en) | Manufacturing method of a semiconductor device | |
| JP3712851B2 (en) | Electronic component and manufacturing method thereof | |
| JP2005285824A (en) | Process for manufacturing semiconductor chip, and process for manufacturing semiconductor device | |
| CN111128760B (en) | Chip packaging method and chip packaging structure based on fan-out type packaging process | |
| JP4207696B2 (en) | Manufacturing method of semiconductor package | |
| WO2016107298A1 (en) | Molding packaged mini mobile phone intelligent card, and packing method | |
| JP2002124527A (en) | Method for manufacturing chip electronic component and method for manufacturing dummy wafer used therefor | |
| JP2003258012A (en) | Bump-applying device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |