CN117198865A - Laser annealing method and device - Google Patents

Laser annealing method and device Download PDF

Info

Publication number
CN117198865A
CN117198865A CN202311003645.6A CN202311003645A CN117198865A CN 117198865 A CN117198865 A CN 117198865A CN 202311003645 A CN202311003645 A CN 202311003645A CN 117198865 A CN117198865 A CN 117198865A
Authority
CN
China
Prior art keywords
laser
wafer
carrier mechanism
annealing
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311003645.6A
Other languages
Chinese (zh)
Inventor
王涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yaoguang Semiconductor Zhejiang Co ltd
Original Assignee
Yaoguang Semiconductor Zhejiang Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaoguang Semiconductor Zhejiang Co ltd filed Critical Yaoguang Semiconductor Zhejiang Co ltd
Priority to CN202311003645.6A priority Critical patent/CN117198865A/en
Publication of CN117198865A publication Critical patent/CN117198865A/en
Pending legal-status Critical Current

Links

Abstract

The invention discloses a laser annealing method, which comprises the following steps: a laser annealing method, comprising the steps of: horizontally moving the carrier mechanism to a laser detection position so that laser is injected into an incidence hole of the laser detection device; detecting an actual power of the laser and/or a quality of the laser; and horizontally moving the carrier mechanism to a laser annealing position, so that the laser irradiates the direction of the adsorption carrier of the carrier mechanism. The invention also discloses an annealing treatment device. By separating laser detection and laser annealing, energy during laser annealing is not lost, and the laser annealing effect is improved.

Description

Laser annealing method and device
Technical Field
The present invention relates to the field of semiconductor integrated circuits, and more particularly, to a laser annealing method and apparatus.
Background
When impurity doping is performed on the surface of a silicon-based semiconductor device, the doped impurity atoms are often in a defective state in the silicon lattice, and thus thermal annealing is generally required. The currently used thermal annealing process needs to carry out laser detection to adjust laser parameters, and the existing laser annealing method needs to use a part of laser for laser detection during annealing, so that the laser energy is lost, and the final annealing effect is affected.
Disclosure of Invention
The present application aims to solve at least one of the technical problems in the related art to some extent.
Therefore, a first object of the present application is to provide a laser annealing method that separates laser detection and laser annealing, thereby improving the laser annealing effect without consuming energy during laser annealing.
A second object of the present application is to provide a laser annealing apparatus.
A second object of the present application is to propose a controller.
A second object of the application is to propose a non-transitory computer readable storage medium.
To achieve the above object, an embodiment of a first aspect of the present application provides a laser annealing method, including the steps of:
horizontally moving the carrier mechanism to a laser detection position so that laser is injected into an incidence hole of the laser detection device;
detecting an actual power of the laser and/or a quality of the laser;
and horizontally moving the carrier mechanism to a laser annealing position, so that the laser irradiates the direction of the adsorption carrier of the carrier mechanism.
In the laser annealing method of the embodiment of the application, firstly, the carrier mechanism is horizontally moved to the laser detection position, so that laser is injected into an incident hole of the laser detection device; detecting the actual power of the laser and/or the quality of the laser; and finally, horizontally moving the carrier mechanism to a laser annealing position, so that the laser irradiates the direction of the adsorption carrier of the carrier mechanism. By separating laser detection and laser annealing, energy during laser annealing is not lost, and the laser annealing effect is improved.
To achieve the above object, a second aspect of the present application provides a laser annealing apparatus, comprising:
the laser detection device is used for detecting the actual power of the laser and/or the quality of the laser;
the carrier mechanism can horizontally move and is fixedly connected with the laser detection device, the carrier mechanism is provided with an adsorption carrier, laser can be injected into an incidence hole of the laser detection device when the carrier mechanism is positioned at a laser detection position, and laser can be injected into the direction of the adsorption carrier of the carrier mechanism when the carrier mechanism is positioned at a laser annealing position.
The laser annealing device of the embodiment of the application comprises:
the laser detection device detects the actual power of the laser and/or the quality of the laser;
the carrier mechanism can horizontally move and is fixedly connected with the laser detection device, the carrier mechanism is provided with an adsorption carrier, laser can be injected into an incidence hole of the laser detection device when the carrier mechanism is positioned at a laser detection position, and laser can be emitted to the direction of the adsorption carrier of the carrier mechanism when the carrier mechanism is positioned at a laser annealing position. By separating laser detection and laser annealing, energy during laser annealing is not lost, and the laser annealing effect is improved.
To achieve the above object, an embodiment of a third aspect of the present application provides a controller including a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the method as described above when executing the computer program.
In order to achieve the above object, a fourth aspect of the present application provides a non-transitory computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method as described above.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a flow chart of a laser annealing method according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a laser annealing device according to an embodiment of the present application in a laser detection position;
FIG. 3 is another flow chart of a laser annealing method according to an embodiment of the present application;
FIG. 4 is a perspective view of a laser annealing device according to an embodiment of the present application;
FIG. 5 is another perspective view of a laser annealing device according to an embodiment of the present invention;
FIG. 6 is a perspective view of a carrier mechanism according to an embodiment of the present invention;
FIG. 7 is another perspective view of a carrier mechanism according to an embodiment of the present invention;
FIG. 8 is a schematic view of a laser annealing device according to an embodiment of the present invention in a laser annealing position;
FIG. 9 is a schematic diagram of a laser shaping device according to an embodiment of the present invention;
FIG. 10 is an exploded view of a laser shaping device according to an embodiment of the present invention;
FIG. 11 is a cross-sectional view taken along the direction AA of FIG. 9;
FIG. 12 is a schematic view of another structure of a laser shaping device according to an embodiment of the present invention;
FIG. 13 is a cross-sectional view of an optical diffraction element according to an embodiment of the present invention;
FIG. 14 is another cross-sectional view of an optical diffraction element of an embodiment of the present invention;
FIG. 15 is a top view of an optical diffraction element according to an embodiment of the present invention;
FIG. 16 is a perspective view of an air circuit device according to an embodiment of the present invention;
FIG. 17 is a perspective view of a laser detection device according to an embodiment of the present invention;
FIG. 18 is a schematic diagram of a laser detection device according to an embodiment of the present invention;
FIG. 19 is a schematic view of another structure of a laser detection device according to an embodiment of the present invention;
fig. 20 is a schematic structural diagram of a controller according to an embodiment of the present invention.
Detailed Description
For a better understanding of the technical content of the present invention, specific examples are set forth below, along with the accompanying drawings.
Aspects of the invention are described in this disclosure with reference to the drawings, in which are shown a number of illustrative embodiments. The embodiments of the present disclosure are not necessarily intended to include all aspects of the invention. It should be understood that the various concepts and embodiments described above, as well as those described in more detail below, may be implemented in any of a number of ways, as the disclosed concepts and embodiments are not limited to any implementation. Additionally, some aspects of the disclosure may be used alone or in any suitable combination with other aspects of the disclosure.
It will be understood that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a plurality of" is one or more, unless specifically defined otherwise.
In the description of the present invention, it should be understood that the terms "center," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment," "in some embodiments," or "in some embodiments" in various places throughout this specification are not all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The embodiment of the application provides a laser annealing method, when a movable carrier mechanism is switched between a laser detection position and a laser annealing position, the laser detection and the laser annealing can be conveniently and respectively carried out, and the laser detection and the laser annealing operation are separated, so that the energy during the laser annealing is not lost, and the laser annealing effect is improved. The method comprises the following steps:
FIG. 1 is a flowchart of an embodiment of the laser annealing method according to the present application, and as shown in FIG. 1, the laser annealing method may include:
in step S101, the carrier mechanism is horizontally moved to the laser detection position, so that the laser is injected into the injection hole of the laser detection device.
It should be noted that, the incident hole of the laser detection device of this embodiment is vertically disposed, and the laser vertically irradiates the incident hole of the laser detection device. The carrier mechanism is movable in a horizontal plane and is provided with a laser detection position. In this embodiment, the incident direction of the laser is fixed, and the irradiation position on the horizontal plane is also fixed, so that the laser detection position is spaced from the irradiation position by a certain distance on the horizontal plane, and the specific value can be determined according to the installation position of the laser detection device. When the carrier mechanism horizontally moves to the laser detection position, laser emitted by the laser generator can be injected into the injection hole of the laser detection device. It is understood that the horizontal movement of the carrier mechanism refers to movement relative to the frame.
Step S102, detecting the actual power of the laser and/or the quality of the laser.
It will be appreciated that during annealing, the actual power of the laser needs to be measured because the laser power variation is not linear. In addition, the quality of the laser, such as spot size, energy distribution, etc., has a great influence on the final annealing effect, and these parameters need to be strictly controlled during annealing.
In one embodiment, the laser detection device comprises a laser power meter for measuring the actual power of the laser light and/or a beam analyzer for analyzing the quality of the laser light, such as spot size, energy distribution, etc. In this embodiment, the actual power of the laser and the quality of the laser are detected. In one embodiment only the actual power of the laser is detected. In other embodiments, only the quality of the laser is detected.
In one embodiment, the step of detecting the actual power of the laser and/or the quality of the laser further comprises:
step S201, controlling the laser generator to adjust to the target power according to the actual power of the laser.
It will be appreciated that since the laser power variation is not linear, the initial power often does not reach the target power, and it is necessary to detect the actual power of the laser and adjust the power of the laser to reach the target power.
Specifically, the controller has a formula ρ=p/(s×v) stored therein, where ρ is the energy density (unit J/cm 2 ) P is the target power (unit W) of the laser, s is the flat-top spot area (unit cm 2 ) V is the speed of movement (in cm/s) of the laser spot (flat top spot) relative to the wafer. In this embodiment, the energy density ρ, the flat-top light spot area s, and the relative wafer movement speed v of the laser light spot (flat-top light spot) are preset, and the target power P of the laser is calculated according to a formula.
In one embodiment, the target power P is a required minimum power E.
In one embodiment, the energy density ρ may be selected to be 1J/cm 2 To 10J/cm 2 . Further, it is optionally 1.5J/cm 2 、2.1J/cm 2 、2.9J/cm 2 、3.8J/cm 2 Better annealing effect can be achieved.
In this embodiment, the laser power is adjusted to the target power, and in other embodiments, the laser power may be adjusted to be slightly greater than the minimum power E. The laser power is adjusted to enable the flat-top light spot to reach the optimal energy density, so that the annealing effect is better.
In one embodiment, the step of detecting the actual power of the laser and/or the quality of the laser further comprises:
step S301: and adjusting the height of the laser shaping device according to the quality of the laser.
It will be appreciated that the quality of the laser is not certain and actual measurements are required just under start-up conditions of the system. Especially, whether the light spot size and the energy distribution accord with the preset light spot size and the energy distribution or not has great influence on the final annealing effect.
Specifically, referring to fig. 19, the height of the laser shaping device may be adjusted according to a preset formula of the controller, where h=f—η—β+θ, where h is the height (unit mm) of the laser shaping device, f is the focal length of the laser shaping device, η is the incidence Kong Guangcheng (unit mm) of the beam analyzer, β is the upper plane height (unit mm) of the beam analyzer from the incident hole to the adsorption carrier, θ is the vertical target moving distance of the laser shaping device, i.e. the Z-axis moving distance (unit mm) of the required spot size, θ may be positive or negative, and θ may be positive or negative according to the cartesian coordinate system.
The height h of the laser shaping device can be detected by a distance sensor, or can be read by a parameter of motor operation, or can be obtained by other modes without limitation.
It should be noted that, the laser shaping device is generally provided with an optical collector for collecting the light beam to form a light spot, and in this embodiment, the laser shaping device is provided with a plano-convex lens, and in other embodiments, other optical elements for collecting the light beam are not limited thereto. The height h of the laser shaping device refers to the vertical distance from the center of the optical concentrator to the upper plane of the suction carrier. The height h of the laser shaping device in this embodiment refers to the vertical distance from the center of the plano-convex lens to the upper plane of the chuck. f is the focal length of the laser shaping device and also refers to the focal length of the optical concentrator, in this embodiment f is the focal length of the plano-convex lens. In one embodiment, the focal length f may be selected to be 200mm to 1000mm, in this embodiment the focal length f is 500mm.
The beam analyzer incidence Kong Guangcheng η is the distance of light from the entrance aperture of the laser detection device to the beam analyzer. Further, it refers to the distance of the light from the entrance aperture of the laser detection device to the optical sensor of the beam analyzer.
Since there is a height difference between the upper plane of the laser detection device and the upper plane of the adsorption carrier, the height difference needs to be corrected, and the height β from the perforation of the laser detection device to the upper plane of the adsorption carrier is the height difference.
And h=f-eta-beta+theta through a preset formula, wherein h, f, eta and beta are fixed values or measured values, and theta is obtained by measuring and substituting specific numerical calculation, and the controller moves the laser shaping device by a corresponding distance theta in the vertical direction according to the target moving distance theta in the vertical direction of the laser shaping device. So that the desired spot size is obtained on the adsorption carrier.
In one embodiment, the corresponding relation exists between the light spot size obtained by analysis of the light beam analyzer and the light spot size irradiated on the adsorption carrier, the corresponding relation is pre-stored in the controller, and when the light spot size is obtained by analysis and measurement of the light beam analyzer, the light spot size irradiated on the adsorption carrier is obtained according to the corresponding relation. So that the spot size irradiated on the adsorption carrier can be adjusted when the theta is adjusted.
In one embodiment, referring to fig. 3, after the step of detecting the actual power of the laser and/or the quality of the laser, the method further includes:
step S401: placing the wafer on the adsorption carrier, and moving the carrier mechanism to a wafer thickness detection position;
step S402: the actual thickness of the wafer is detected by the wafer thickness measuring device.
Specifically, the carrier mechanism is provided with a wafer thickness detection position on a horizontal plane, and when the carrier mechanism is positioned at the wafer thickness detection position, the actual thickness of the wafer can be detected by the wafer thickness measuring device.
In one embodiment, the step of detecting the actual thickness of the wafer by the wafer thickness measuring device further includes:
step S403: and adjusting the height of the laser shaping device according to the actual thickness of the wafer so that the light spot size of the laser irradiated on the wafer reaches a preset size.
It should be noted that, after the height of the laser shaping device is adjusted in step S301, the spot size irradiated on the adsorption carrier is obtained, and the wafer has a certain thickness, so that the spot size actually required to be irradiated on the wafer surface has an error with the preset spot size, which results in a decrease in the annealing effect. The height of the laser shaping device needs to be adjusted again. Assuming that the wafer actually measures the thickness t (unit mm), the controller is required to control the laser shaping device to move upwards by t again, so that the size of a light spot irradiated by the laser on the wafer reaches a preset size.
Step S103, horizontally moving the carrier mechanism to a laser annealing position, so that the laser irradiates the direction of the adsorption carrier of the carrier mechanism.
Specifically, the carrier mechanism is provided with a laser annealing position, when the carrier mechanism horizontally moves to the laser annealing position, laser vertically irradiates in the direction of an adsorption carrier of the carrier mechanism, and as a wafer is already placed on the adsorption carrier, the laser can irradiate to the wafer, and further, the laser can irradiate to the geometric center of the wafer, so that annealing operation is completed.
In one embodiment, the step of moving the carrier mechanism horizontally to the laser annealing position such that the direction of the laser beam toward the suction carrier of the carrier mechanism further comprises:
step S501, firstly starting the carrier mechanism to achieve uniform motion, and then starting the laser generator to emit laser to scan the wafer for annealing.
Because the pulse laser light source is used for a period of time, the power attenuation phenomenon can occur, the Z axis is a mechanical mechanism, and the repeated precision error can occur frequently to correct the height, so that the focus is out of focus. In order to ensure the stability of annealing, the embodiment of the application monitors the laser power and the beam quality regularly through the laser detection device, and the control system adjusts the laser source power and corrects the focal length of the laser shaping device in real time, thereby ensuring the accuracy of annealing.
In order to achieve the above embodiments, the present application also proposes a laser annealing apparatus 2, which is a schematic structural view of the laser annealing apparatus according to one embodiment of the present application. As shown in fig. 2, the laser annealing apparatus includes: laser detection device, carrier mechanism.
The laser detection device is used for detecting the actual power of the laser and/or the quality of the laser;
The carrier mechanism can horizontally move and is fixedly connected with the laser detection device, the carrier mechanism is provided with an adsorption carrier, laser can be injected into an incidence hole of the laser detection device when the carrier mechanism is positioned at a laser detection position, and laser can be injected into the adsorption carrier of the carrier mechanism when the carrier mechanism is positioned at a laser annealing position.
In one embodiment, the laser annealing device further includes:
a laser generator for emitting the laser;
the laser shaping device is used for laser shaping;
and the controller is used for adjusting the height of the laser shaping device according to the quality of the laser and controlling the laser generator to adjust to target power according to the actual power of the laser.
In one embodiment, the laser annealing device further includes:
the wafer thickness measuring device is used for detecting the actual thickness of the wafer;
the controller is further configured to adjust a height of the laser shaping device according to an actual thickness of the wafer, so that a spot size of the laser irradiated on the wafer reaches a preset size.
In one embodiment, the controller is further configured to control the laser generator to adjust to a target power based on an actual power of the laser.
It will be appreciated that since the laser power variation is not linear, the initial power often does not reach the target power, and it is necessary to detect the actual power of the laser and adjust the power of the laser to reach the target power.
Specifically, the controller has a formula ρ=p/(s×v) stored therein, where ρ is the energy density (unit J/cm 2 ) P is the target power (unit W) of the laser, s is the flat-top spot area (unit cm 2 ) V is the speed of movement (in cm/s) of the laser spot (flat top spot) relative to the wafer. In this embodiment, the energy density ρ, the flat-top light spot area s, and the relative wafer movement speed v of the laser light spot (flat-top light spot) are preset, and the target power P of the laser is calculated according to a formula.
In one embodiment, the controller is further configured to adjust the height of the laser shaping device based on the quality of the laser.
The controller is further configured to pre-store a preset formula, and adjust the height of the laser shaping device according to the preset formula, where h=f- η - β+θ, where h is the height (unit mm) of the laser shaping device, f is the focal length of the laser shaping device, η is the incidence Kong Guangcheng (unit mm) of the beam analyzer, β is the height (unit mm) of the upper plane of the beam analyzer from the incidence hole to the adsorption carrier, θ is the target moving distance in the vertical direction of the laser shaping device, i.e. the Z-axis moving distance (unit mm) of the required spot size, θ may be a positive value or a negative value, and is specified to be positive upwards and negative downwards according to a cartesian coordinate system.
The height h of the laser shaping device can be detected by a distance sensor, or can be read by a parameter of motor operation, or can be obtained by other modes without limitation.
The laser detection and the laser annealing are separated, so that the laser energy during the laser annealing is not required to be consumed during the laser detection, and the laser annealing effect is improved.
Referring to fig. 4 to 19, a laser annealing apparatus according to an embodiment of the invention is described below.
As shown in fig. 2 and 4, the laser annealing device 100 according to the embodiment of the invention includes a frame 10, a laser transmission system 20, a laser shaping device 30, an air path device 40, a laser detection device 50, a controller 60, and a wafer thickness measurement device 410, wherein the controller 60 is electrically connected to the frame 10, the laser transmission system 20, the laser shaping device 30, the air path device 40, the laser detection device 50, and the wafer thickness measurement device 410, respectively, and the laser transmission system 20, the laser shaping device 30, the air path device 40, and the laser detection device 50 are all disposed on the frame 10, and optionally, the controller 60 may be disposed on the frame 10 or not disposed on the frame 10. The laser light is emitted from the laser generator of the laser delivery system 20, conducted through the laser delivery system 20, and shaped and homogenized by the laser shaping device 30, and finally reaches the element to be annealed on the frame 10. The gas path device 40 is used for forming an inert gas protection atmosphere at the element to be annealed to form a gas protection barrier. The laser detection device 50 is used for detecting the quality of the laser, so that the laser can be correspondingly adjusted according to the quality of the laser to obtain a better irradiation effect.
In fig. 4, three directions orthogonal to each other are indicated by arrows as an X-axis direction, a Y-axis direction, and a Z-axis direction. In the embodiment shown in fig. 1, the X-axis direction and the Y-axis direction are horizontal directions perpendicular to each other, and the Z-axis direction is vertical direction. The X-axis, Y-axis and Z-axis are perpendicular to each other. The same applies to the other figures.
Rack
Referring to fig. 4-7, a frame 10 is a main body base for mounting other structures of the laser annealing apparatus 100. In this embodiment, the frame 10 is substantially rectangular when viewed from above, and it is to be understood that the shape of the frame 10 is not limited and can be adjusted according to practical requirements.
The frame 10 includes a first frame 101 and a second frame 102 fixedly connected, and in this embodiment, the second frame 102 is welded or riveted to the first frame 101 along the Z-axis direction. The first frame 101 includes a first table 103. The second frame 102 includes a column 104 provided on the first table 103 and a second table 105 erected on the column 104.
In this embodiment, the stand columns 104 include two stand columns, that is, a first stand column 114 and a second stand column 115, and the two stand columns are disposed at intervals along the X-axis direction, the bottom edges of the stand columns 104 are disposed parallel to the side line of the upper table top of the first table 103, and each of the two stand columns 104 is the same distance from the side line of the upper table top of the adjacent first table 103.
In one embodiment, the second frame 102 is symmetrical about a central axis of the first stage 103 parallel to the Y-axis direction.
In one embodiment, the second stage 105 is used to mount a laser generator and optical elements.
In one embodiment, the first frame 101 and the second frame 102 may be made of aluminum, copper alloy, engineering plastic, or the like.
In one embodiment, the frame 10 includes a carrier mechanism 118, the carrier mechanism 118 includes an X-axis moving device 119, a y-axis moving device 120, and an adsorption carrier 116, and the carrier mechanism 118 is used to place a wafer and drive the wafer to move horizontally relative to the frame 10.
In one embodiment, the second frame 102 is located on one side of the first table 103, the carrier mechanism 118 is located on the other side of the first table 103 away from the second frame 102, and the second frame 102 and the carrier mechanism 118 are aligned along the Y-axis.
In one embodiment, the upper surface of the first table 103 is provided with an X-axis moving device 119, a y-axis moving device 120 and an adsorption carrier 116 sequentially from bottom to top along the Z-axis direction.
In one embodiment, the X-axis moving device 119 may drive the Y-axis moving device 120 and the adsorption carrier 116 to move along the X-axis direction. The Y-axis moving device 120 may drive the adsorption carrier 116 to move in the Y-axis direction.
In one embodiment, the X-axis moving device 119 includes a first housing 106, an X-axis guide 107, an X-axis driving device 108, and an X-axis base 109. The X-axis base 109 is fixedly connected to the upper surface of the first workbench 103, the X-axis guide rail 107 is fixedly connected to the X-axis base 109, the first housing 106 is fixedly connected to the X-axis driving device 108, and the X-axis driving device 108 can drive the first housing 106 to move relatively along the X-axis guide rail 107.
In one embodiment, the X-axis driving device 108 is a linear motor or a ball screw driven by a servo motor, and in other embodiments, other realizable structures may be used, which is not limited thereto.
In one embodiment, the Y-axis moving device 120 includes a second housing 110, a Y-axis guide 111, a Y-axis driving device 112, and a Y-axis base 113. The Y-axis base 113 is fixedly connected to the upper surface of the first housing 106, the Y-axis guide rail 111 is fixedly connected to the Y-axis base 113, the first housing 106 is fixedly connected to the Y-axis driving device 112, and the Y-axis driving device 112 can drive the second housing 110 to move relatively along the Y-axis guide rail 111.
In one embodiment, the Y-axis driving device 112 is a linear motor or a ball screw driven by a servo motor, and in other embodiments, other realizable structures may be used, which is not limited thereto.
In one embodiment, the adsorption carrier 116 is fixedly disposed on the upper surface of the second housing 110, and can move along with the Y-axis moving device 120 in the X-axis direction or the Y-axis direction.
In one embodiment, the adsorption carrier 116 is used for loading the element to be annealed, and adsorbing the element to be annealed by vacuum pumping.
In one embodiment, the element to be annealed is a wafer.
In one embodiment, the suction carrier 116 is a suction cup.
In one embodiment, a laser detection device 50 is disposed on one side of the Y-axis moving device 107. In other embodiments, the laser detection device 50 may be disposed on the side of the X-axis moving device.
Laser transmission system
In one embodiment, referring to fig. 4, the laser transmission system 20 includes a laser generator 201 and a light guiding mechanism 202, and the light guiding mechanism 202 includes a first light guiding mechanism 203 and a second light guiding mechanism 204. The laser generator 201 is for emitting a laser beam. The laser generator 201, the first light guiding mechanism 203, and the second light guiding mechanism 204 are all disposed on the second workbench 105. The first light guiding mechanism 203 is configured to change the direction of the laser beam emitted from the laser generator 201 at least twice in the horizontal direction, and directs the laser beam to the second light guiding mechanism 204. The second light guiding mechanism 204 is configured to convert the laser beam transmitted by the first light guiding mechanism 203 from incident light in a horizontal direction to emergent light in a vertical direction.
In one embodiment, referring to fig. 4, the first light guiding mechanism 203 includes a first guide rail 205, and a first light guiding component 206 and a second light guiding component 207 disposed on the first guide rail 205. The first light guiding component 206 is used for rotating the laser beam emitted by the laser generator 201 by 90 ° in the horizontal direction, and the second light guiding component 207 is used for rotating the laser beam transmitted by the first light guiding component 206 by 90 ° again in the horizontal direction, and at this time, the laser beam emitted from the second light guiding component 207 is parallel to the initial laser beam emitted by the laser generator 201.
In one embodiment, referring to fig. 1, the second light guiding mechanism 204 includes a support base 226, and a third light guiding assembly 227 fixedly connected to the support base 226.
In one embodiment, the stand base 226 is disposed along a third direction, which is a vertical direction perpendicular to the horizontal direction.
In one embodiment, the first light guide assembly 206 is provided with a first reflector, the second light guide assembly 207 is provided with a second reflector, the third light guide assembly 227 is provided with a third reflector, and the mirror centers of the first reflector, the second reflector and the third reflector and the emission hole of the laser generator 201 are all at the same height.
The laser delivery system 20 ultimately directs the laser light emitted by the laser generator 201 to the laser shaping device 30.
Laser shaping device
Referring to fig. 9 to 15, the laser shaping device 30 of the present embodiment includes: a beam homogenizer 301 and a beam condenser 302.
In one embodiment, the beam homogenizer 301 is located on the optical path of the laser, the beam homogenizer 301 includes a diffractive optical element 303, the diffractive optical element 303 is provided with a plurality of slits 304, and the diffractive optical element 303 is used to convert the gaussian spot of the laser into a flat-top spot 209.
In one embodiment, the beam condenser 302 is disposed in the direction of the outgoing light of the diffractive optical element 303, and is configured to focus the flat-top light spot 209 obtained by passing the laser through the diffractive optical element 303 to a focal position to form a flat-top light spot 209 with a preset size.
In one embodiment, the optical shaping device 30 further comprises an optical fixing bracket 305, a homogenizer adjustment bracket 306, and an optical concentrator fixing base 307, wherein the homogenizer adjustment bracket 306 is mounted on the upper side of the optical fixing bracket 305, and the optical concentrator fixing base 307 is mounted inside the optical fixing bracket 305.
In one embodiment, homogenizer mount 306 and optical concentrator mounting 307 are each provided with a passage for the laser light to pass through.
In one embodiment, the optical fixing support 305 is integrally L-shaped, and a vertical portion of the L-shape is used for fixedly connecting with other components, so as to fix the optical shaping device 30, and a horizontal portion of the L-shape is used for carrying the homogenizer adjusting frame 306, the beam homogenizer 301, the beam condenser 302 and the optical condenser fixing base 307. The other components may be selected from brackets and the like.
In one embodiment, a through hole 308 is provided in the middle of the optical fixing support 305, an optical collector fixing base 307 is provided at the bottom of the through hole 308, a first cavity 309 penetrating up and down is provided in the optical collector fixing base 307, and a boss 310 is provided at the bottom of the optical collector fixing base 307, for carrying the beam collector 302.
In one embodiment, the optical collector holder 307 is detachably fastened to the bottom of the through hole 308, and the optical collector holder 307 is additionally disposed outside the optical fixing support 305 and is designed to be detachably fastened, so that the optical collector holder 307 can be conveniently detached without detaching the optical fixing support 305, and the optical collector can be taken out for replacement or maintenance.
In one embodiment, the homogenizer adjustment rack 306 includes an adjustment rack fixing seat 311, a clamping member 312, and a fixing support 313, where an upper surface of the adjustment rack fixing seat 311 is open and a second cavity 314 is disposed inside, the fixing support 313 is clamped at the opening, and an outer side of the clamping member 312 is clamped with the fixing support 313, and optionally, an inner side of the clamping member 312 is clamped with the beam homogenizer 301. The clamping piece 312 is detachably clamped on the fixing support 313, the clamping piece 312 is additionally arranged outside the adjusting frame fixing seat 311 and is designed to be detachably clamped, and the clamping piece 312 can be conveniently detached on the premise that the adjusting frame fixing seat 311 is not detached, so that the beam homogenizer 301 is taken out for replacement or maintenance.
In one embodiment, the clamping member 312 is in a sleeve shape, a third cavity 315 penetrating up and down is provided in the clamping member 312, and the first cavity 309 is opposite to the third cavity 315, so that the laser can sequentially pass through the third cavity 315 and the first cavity 309.
In one embodiment, the clamping member 312 is rotatably clamped on the fixing support 313, the beam homogenizer 301 is placed in the clamping member 312, optionally, a step is provided at the bottom of the clamping member 312, and the beam homogenizer 301 is placed on the bottom step of the clamping member 312.
In one embodiment, the clamping member 312 extends into the bottom of the fixing seat 311 of the adjusting frame and the bottom of the fixing seat 311 of the adjusting frame at the same level, and the fixing support 313 extends downward to a part of the fixing seat, and a predetermined distance is left between the fixing support and the level at which the bottom of the fixing seat 311 of the adjusting frame is located, so that a gap is left.
In one embodiment, the clamping member 312 is generally cylindrical, and a limiting cover 316 is disposed on the top, and the limiting cover 316 is detachably connected to the clamping member 312. When the limit cap 316 is opened, the beam homogenizer 301 in the third cavity 315 may be removed from the limit cap 316, and it is understood that the detachable connection may include, but is not limited to, a snap fit, a screw fit, etc.
In one embodiment, the homogenizer adjustment frame 306 is substantially square.
In one embodiment, the adjustment frame fixing seat 311 is provided with a position adjuster along a horizontal direction, and the position adjuster is used to adjust the position of the beam homogenizer 301 in the horizontal direction. Optionally, the position adjuster includes a first position adjuster 317 and a second position adjuster 318, where the first position adjuster 317 and the second position adjuster 318 are perpendicular to each other, and the first position adjuster 317 and the second position adjuster 318 can be used to adjust the pitch of the beam homogenizer 301 in two horizontal directions perpendicular to each other, so as to adjust the homogenizer to a proper position.
In one embodiment, the fixing base is provided with a first through hole and a second through hole in mutually perpendicular directions, wherein the first through hole is used by the first position adjuster 317, the second through hole is used by the second position adjuster 318, and optionally, the first position adjuster 317 comprises a nut and a bolt, the nut is arranged on the outer side of the first through hole, the bolt penetrates through the first through hole to extend into the inner cavity of the fixing base, penetrates through a gap below the fixing part, is abutted against the outer side wall of the clamping piece 312, and the position of the clamping piece 312 on the central axis of the bolt can be adjusted by rotating the nut, so that the beam homogenizer 301 is driven to adjust the position. It is to be understood that the second position adjuster 318 has the same structure and principle as the first position adjuster 317, and will not be described herein.
In one embodiment, the diffractive optical element 303 comprises a diffractive lens.
In one embodiment, the beam concentrator 302 comprises a plano-convex lens.
In one embodiment, the diffractive lens is circular or square or other shape.
In one embodiment, referring to fig. 15, the diffractive optical element 303 is composed of a first region 319 and a second region 320; the first region 319 is an unetched region and the second region 320 is an etched region that, when illuminated, imparts a phase delay to a portion of the light passing through the element. These phase delays can be controlled when pre-designed for a particular input beam, ultimately producing an image with nearly any desired shape and size characteristics at the output. In this embodiment, the incident beam passes through the diffractive optical element 303 to form a flat-top spot 209 on the working plane.
In one embodiment, the second region 320 is provided with a plurality of slits 304, and the slits 304 are formed by a photolithography process, and in other embodiments, may be formed by an etching process.
In one embodiment, when referring to fig. 15, the diffraction lens is circular, the slit 304 is a concentric plurality of rings, and it is understood that the plurality of rings includes an integer number of rings, such as 2, 3, 4, etc. In one embodiment, the spacing between the plurality of rings is the same.
In one embodiment, the second area 320 is 1 dot concentric with the center and a plurality of rings spaced around the dot, and it is understood that the plurality of rings includes an integer number of 2, 3, 4, etc. In one embodiment, the spacing between the plurality of rings is the same. In one embodiment, the second region 320 is in the shape of a dot loop.
In one embodiment, when the diffractive lens is square, the slit 304 is a plurality of square rings, and it is understood that the plurality of square rings includes an integer number of 2, 3, 4, etc. In one embodiment, the spacing between the plurality of square rings is the same.
In one embodiment, the second area 320 is 1 square in the center and a plurality of square rings spaced around the square, and it is understood that the plurality of square rings includes an integer number of 2, 3, 4, etc. square rings. In one embodiment, the spacing between the plurality of square rings is the same.
In one embodiment, where the slit 304 width a is designed based on the incident laser 208 wavelength λ and plano-convex lens focal length, the slit 304 size calculation formula,
wherein M2 is Gaussian beam quality, L is focal length of the plano-convex lens, D is output beam diameter, and D1 is homogenized square light spot side length or homogenized circular light spot diameter, and the unit is nm. When the incident laser 208 is a single-mode or multi-mode Gaussian beam of the fundamental transverse mode TEM00, a diffraction spot is formed when the beam passes through the diffraction lens, and the beam is homogenized through the slit 304 to reach a very good flat-top beam, and then focused on the surface of the wafer through the plano-convex lens. The method has the advantages that the energy transmission loss is lower than 10%, the homogenized flat-top light spot 209 has uniform energy distribution, the sharpness of the light spot edge is high, the overlapping scanning energy distribution is uniform, and the annealing effect is good. Optionally, the width a is 300-800nm. Further, the width a is 400-600nm.
In one embodiment, the diameter of the dot or the side length of the square is a, and the calculation formula of a and the calculation formula of the size of the slit 304 areThe same applies.
In one embodiment, the bottom of the slit 304 is planar.
In one embodiment, referring to fig. 14, the bottom of the slit 304 is arc-shaped, and when the arc-shaped bottom of the slit 304 is adopted, the obtained flat-top light spot 209 has more uniform energy distribution and better homogenization effect.
The traditional laser annealing adopts a compound eye mode to shape the light beam, the energy transmission efficiency is lower than 80 percent, and the uniformity of the output light spot is poor.
In one embodiment, referring to fig. 4, the laser annealing device 100 further includes a Z-axis moving device 321, and the laser shaping device 30 is fixedly mounted on the Z-axis moving device 321. The Z-axis moving device 321 drives the laser shaping device 30 to move along the vertical direction (Z-axis moving) according to actual needs, so as to adjust the height h of the laser shaping device 30, ensure that the relative distance between the surface of the wafer and the plano-convex lens is consistent with the focal length of the plano-convex lens, meet the requirement of the required annealing parameters, and improve the annealing stability.
In one embodiment, the Z-axis moving device 321 includes a Z-axis bracket 323, a Z-axis rail, a Z-axis driving device, and a Z-axis base 324. The Z-axis base 324 is fixedly connected to the vertical plate 322, the Z-axis guide rail is fixedly connected to the Z-axis base 324, the Z-axis support 323 is fixedly connected to the Z-axis driving device, and the Z-axis driving device can drive the Z-axis support 323 to move relatively along the Z-axis guide rail.
In one embodiment, the Z-axis driving device is a linear motor or a ball screw driven by a servo motor, and in other embodiments, other realizable structures can be used, without limitation.
In one embodiment, the Z-axis moving device 321 can also be realized by driving the screw to rotate by a synchronous belt through a servo motor.
In one embodiment, the laser shaping device 30 is fixedly coupled to the Z-axis bracket 323.
In one embodiment, the controller 60 is electrically connected to the Z-axis moving device 321, and the controller 60 is configured to control the Z-axis moving device 321 to drive the laser shaping device 30 to move along the Z-axis, so as to adjust the height h of the laser shaping device 30.
In one embodiment, the Z-axis bracket 323 is T-shaped, and a plurality of rectangular through holes are provided along the Z-axis direction, which can play a role in weight reduction.
Air path device
In one embodiment, referring to fig. 16, the gas circuit device 40 is applied to a laser annealing device, and the gas circuit device 40 includes a susceptor 401 and an inert gas inflow line (not shown), and the susceptor 401 is in communication with the inert gas inflow line.
In one embodiment, the gas circuit device 40 further includes a connection bracket 414, where the connection bracket 414 is fixedly connected to the base 401, and further is fixedly connected to the connection member 404, and the base 401 is fixed at a relative position of the laser annealing device by the connection bracket 414. The air path device 40 is disposed below the laser shaping device in this embodiment.
In one embodiment, an inert gas inflow port 407 is provided on one side of the susceptor 401, and the inert gas inflow port 407 communicates with an inert gas inflow line (not shown).
In one embodiment, the air path device 40 further includes an exhaust gas discharge channel 402, and the base 401 is in communication with the exhaust gas discharge channel 402.
In one embodiment, the base 401 includes a gas guiding device 403 and a connecting member 404, and optionally, the gas guiding device 403 is disposed at one end of the connecting member 404, and the gas guiding device 403 has a substantially arcuate shape. In other embodiments, the gas channeling means 403 may be of other shapes.
In one embodiment, the base 401 is provided with a laser entry hole 409 through which laser light passes to the carrier mechanism 118 below.
In one embodiment, referring to fig. 1-2, the gas circuit device 40 is provided with a wafer thickness measuring device 410, further, the base 401 is provided with the wafer thickness measuring device 410, further, one side of the horizontal connecting piece is provided with the wafer thickness measuring device 410, by arranging the wafer thickness measuring device 410 on the gas circuit device, since the gas circuit device 40 is closer to the wafer, the wafer thickness measuring device 410 is arranged on the gas circuit device, the detection result is more accurate, meanwhile, the position of the gas circuit device is relatively stable, the wafer thickness measuring device 410 can not be basically moved, and the mounting of the wafer thickness measuring device 410 is not required without an additional support structure, so that the structure is simpler and the mounting is more convenient.
In one embodiment, the wafer thickness measurement device 410 comprises a dual measurement probe type device or a single measurement probe type device. The double-measuring probe type wafer to be measured is placed on the small sucker, the sucker drives the wafer to move between two opposite probes along a specified pattern, and the two probes are tested simultaneously to obtain a pair of displacement data to form a thickness data set. The single measurement probe is used for measuring the upper surface of the sucker and the upper surface of the wafer respectively through one measurement probe to obtain the height data of the upper surface of the sucker and the upper surface of the wafer, and the difference value of the height data of the upper surface of the sucker subtracted by the height data of the upper surface of the wafer is the thickness data of the wafer.
In one embodiment, the thickness of the air layer between the two sides of the wafer and the inner wall of the cavity is measured by a non-contact method by using a Fourier transform infrared spectrometer, and the distance between the two inner walls of the cavity is measured by using a micrometer, so that the accurate thickness of the wafer can be obtained.
The wafer thickness measuring device 410 is a well-established technology, and any detection device available in the market can be adopted in the embodiment of the invention. The wafer thickness measuring device 410 is electrically connected to the controller 60, and the controller 60 can obtain the actual thickness of the wafer detected by the wafer thickness measuring device 410.
Laser detection device
Referring to fig. 17-18, in one embodiment, the laser detection device is provided with a beam analyzer 505, a laser power meter 504, and a beam splitting optical element 502. The beam splitting optical element 502 is used to split the incident laser 501 into two beams, one beam is directed to the beam analyzer 505 and the other beam is directed to the laser power meter 504.
In one embodiment, the beam splitting optical element 502 is a beam splitting prism or a wind-light flat sheet.
In one embodiment, the laser detection device is further provided with a transmission attenuation sheet 503, and the transmission attenuation sheet 503 is 0.1% transmission attenuation sheet 503.
In one embodiment, the laser power meters 504 are disposed laterally below the beam analyzer 505 and are disposed perpendicular to each other.
In one embodiment, the laser detection device is further provided with a first outer sleeve 507, optionally the first outer sleeve 507 is cubic, the beam splitting optical element 502 is installed inside the first outer sleeve 507, the beam analyzer 505 is installed at a side portion of the first outer sleeve 507, and the laser power meter 504 is installed at a lower portion of the first outer sleeve 507.
In one embodiment, the laser detection device is provided with a bracket 508 disposed at a lower portion of the first casing 507, and the bracket 508 is used for supporting the first casing 507.
In one embodiment, an incident hole 506 is formed at the upper part of the first casing 507, and the laser can be injected into the first casing 507 through the incident hole 506 and split into two beams at the beam splitting optical element 502, one beam is directed to the beam analyzer 505, and the other beam is directed to the laser power meter 504.
In one embodiment, the laser detection device further comprises a second housing 509, and the first housing 507, the beam analyzer 505, the laser power meter 504, and the spectroscopic optical element 502 are all disposed inside the second housing 509. The second outer sleeve 509 is fixedly connected to the carrier mechanism 118, so as to drive the laser detection device 50 to move in the horizontal direction.
The application solves the problems of poor consistency of laser annealing effect and high defective rate caused by the fact that the traditional laser annealing process can not automatically adjust the laser focal length, and can better achieve the annealing effect by detecting the thickness of the wafer and adjusting the distance from the laser shaping device to the surface of the wafer.
The fixed connection or the fixed installation means connection modes such as screw connection, welding, riveting and the like, and are not limited.
Fig. 19 is a schematic structural diagram of an embodiment of a controller 60 according to the present application, where the controller 60 may include a memory, a processor, and a computer program stored in the memory and capable of running on the processor, and when the processor executes the computer program, the method for displaying folders in a network disk provided by the embodiment of the present application may be implemented.
The controller 60 may be a server or a terminal device, and the specific form of the controller 60 is not limited in this embodiment.
Fig. 19 shows a block diagram of an exemplary controller 60 suitable for use in implementing embodiments of the present application. The controller 60 shown in fig. 19 is only an example and should not be construed as limiting the functionality and scope of use of the embodiments of the present application.
As shown in fig. 19, the controller 60 is in the form of a general purpose computing device. The components of the controller 60 may include, but are not limited to: one or more processors or processing units 602, a system memory 603, and a bus 604 that connects the different system components (including the system memory 603 and the processing unit 602).
Bus 604 represents one or more of several types of bus structures, including a memory bus or memory controller, a peripheral bus, an accelerated graphics port, a processor, and a local bus using any of a variety of bus architectures. By way of example, and not limitation, such architectures include industry Standard architecture (Industry StandardArchitecture; hereinafter ISA) bus, micro channel architecture (Micro Channel Architecture; hereinafter MAC) bus, enhanced ISA bus, video electronics standards Association (Video Electronics StandardsAssociation; hereinafter VESA) local bus, and peripheral component interconnect (Peripheral ComponentInterconnection; hereinafter PCI) bus.
Controller 60 typically includes a variety of computer system readable media. Such media can be any available media that is accessible by controller 60 and includes both volatile and nonvolatile media, removable and non-removable media.
The system memory 603 may include computer system readable media in the form of volatile memory, such as random access memory 604 (Random Access Memory; hereinafter: RAM) and/or cache memory 605. The controller 60 may further include other removable/non-removable, volatile/nonvolatile computer system storage media. By way of example only, storage system 606 may be used to read from and write to non-removable, nonvolatile magnetic media (not shown in FIG. 19, commonly referred to as a "hard disk drive"). Although not shown in fig. 19, a magnetic disk drive for reading from and writing to a removable nonvolatile magnetic disk (e.g., a "floppy disk"), and an optical disk drive for reading from or writing to a removable nonvolatile optical disk (e.g., a compact disk read only memory (Compact Disc ReadOnly Memory; hereinafter CD-ROM), digital versatile read only optical disk (Digital Video Disc Read OnlyMemory; hereinafter DVD-ROM), or other optical media) may be provided. In such cases, each drive may be coupled to bus 604 by one or more data medium interfaces. The memory may include at least one program product having a set (e.g., at least one) of program modules configured to carry out the functions of the embodiments of the application.
A program/utility 608 having a set (at least one) of program modules 607 may be stored, for example, in a memory, such program modules 607 including, but not limited to, an operating system, one or more application programs, other program modules, and program data, each or some combination of which may include an implementation of a network environment. Program modules 607 generally perform the functions and/or methods of the described embodiments of the application.
The controller 60 may also communicate with one or more external devices 609 (e.g., keyboard, pointing device, display 610, etc.), one or more devices that enable a user to interact with the controller 60, and/or any device (e.g., network card, modem, etc.) that enables the controller 60 to communicate with one or more other computing devices. Such communication may occur through an input/output (I/O) interface 611. Also, the controller 60 may communicate with one or more networks (e.g., a local area network (Local Area Network; hereinafter: LAN), a wide area network (Wide Area Network; hereinafter: WAN) and/or a public network, such as the Internet) via the network adapter 612. As shown in fig. 19, the network adapter 612 communicates with other modules of the controller 60 over the bus 604. It should be appreciated that although not shown in fig. 19, other hardware and/or software modules may be used in conjunction with controller 60, including but not limited to: microcode, device drivers, redundant processing units 602, external disk drive arrays, RAID systems, tape drives, data backup storage systems, and the like.
The processing unit 602 executes various functional applications and data processing by running a program stored in the system memory 603, for example, to implement the method for displaying folders in a network disk provided by the embodiment of the present application.
The embodiment of the application also provides a non-transitory computer readable storage medium, on which a computer program is stored, which can realize the method for showing the folders in the network disk provided by the embodiment of the application when the computer program is executed by a processor.
The non-transitory computer readable storage media described above may employ any combination of one or more computer readable media. The computer readable medium may be a computer readable signal medium or a computer readable storage medium. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples (a non-exhaustive list) of the computer-readable storage medium would include the following: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access Memory 604 (RAM), a Read-Only Memory (ROM), an erasable programmable Read-Only Memory (ErasableProgrammableRead Only Memory; EPROM) or flash Memory, an optical fiber, a portable compact disc Read-Only Memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
The computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, either in baseband or as part of a carrier wave. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination of the foregoing. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.
Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
Computer program code for carrying out operations of the present application may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, smalltalk, C ++ and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a wide area network (Wide Area Network; WAN), or may be connected to an external computer (e.g., connected through the internet using an internet service provider).
Logic and/or steps represented in the flowcharts or otherwise described herein, e.g., a ordered listing of executable instructions for implementing logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device), a portable computer cartridge (magnetic device), a random access Memory 604 (Random AccessMemory; hereinafter RAM), a Read Only Memory (ROM), an erasable programmable Read Only Memory (Erasable Programmable Read Only Memory; hereinafter EPROM) or flash Memory, an optical fiber device, and a portable compact disc Read Only Memory (Compact Disc Read Only Memory; hereinafter CD-ROM) having one or more wiring. In addition, the computer readable medium may even be paper or other suitable medium on which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. As with the other embodiments, if implemented in hardware, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable gate arrays (ProgrammableGate Array; hereinafter PGA), field programmable gate arrays (Field Programmable Gate Array; hereinafter FPGA), and the like.
Those of ordinary skill in the art will appreciate that all or a portion of the steps carried out in the method of the above-described embodiments may be implemented by a program to instruct related hardware, where the program may be stored in a computer readable storage medium, and where the program, when executed, includes one or a combination of the steps of the method embodiments.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing module, or each unit may exist alone physically, or two or more units may be integrated in one module. The integrated modules may be implemented in hardware or in software functional modules. The integrated modules may also be stored in a computer readable storage medium if implemented in the form of software functional modules and sold or used as a stand-alone product. The above-mentioned storage medium may be a read-only memory, a magnetic disk or an optical disk, or the like.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

1. A laser annealing method, comprising the steps of:
horizontally moving the carrier mechanism to a laser detection position so that laser is injected into an incidence hole of the laser detection device;
detecting an actual power of the laser and/or a quality of the laser;
and horizontally moving the carrier mechanism to a laser annealing position, so that the laser irradiates the direction of the adsorption carrier of the carrier mechanism.
2. The laser annealing method according to claim 1, wherein after the step of detecting the actual power of the laser light and the quality of the laser light, comprising:
the laser generator is controlled to adjust to the target power according to the actual power of the laser.
3. The laser annealing method according to claim 1, further comprising, after said step of detecting an actual power of the laser light and/or a quality of the laser light:
And adjusting the height of the laser shaping device according to the quality of the laser.
4. The laser annealing method according to claim 1, further comprising, after said step of detecting an actual power of the laser light and/or a quality of the laser light:
placing the wafer on the adsorption carrier, and moving the carrier mechanism to a wafer thickness detection position; the actual thickness of the wafer is detected by the wafer thickness measuring device.
5. The laser annealing method according to claim 1, wherein the step of detecting the actual thickness of the wafer by the wafer thickness measuring device further comprises:
and adjusting the height of the laser shaping device according to the actual thickness of the wafer so that the light spot size of the laser irradiated on the wafer reaches a preset size.
6. A laser annealing apparatus, comprising:
the laser detection device is used for detecting the actual power of the laser and/or the quality of the laser;
the carrier mechanism can horizontally move and is fixedly connected with the laser detection device, the carrier mechanism is provided with an adsorption carrier, laser can be injected into an incidence hole of the laser detection device when the carrier mechanism is positioned at a laser detection position, and laser can be injected into the adsorption carrier of the carrier mechanism when the carrier mechanism is positioned at a laser annealing position.
7. The laser annealing apparatus according to claim 6, further comprising:
a laser generator for emitting the laser;
a laser shaping device for shaping the laser;
and the controller is used for adjusting the height of the laser shaping device according to the quality of the laser and controlling the laser generator to adjust to target power according to the actual power of the laser.
8. The laser annealing apparatus according to claim 7, further comprising:
the wafer thickness measuring device is used for detecting the actual thickness of the wafer;
the controller is further configured to adjust a height of the laser shaping device according to an actual thickness of the wafer, so that a spot size of the laser irradiated on the wafer reaches a preset size.
9. A controller comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the method of any of claims 1-5 when executing the computer program.
10. A non-transitory computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when executed by a processor, implements the method according to any of claims 1-5.
CN202311003645.6A 2023-08-09 2023-08-09 Laser annealing method and device Pending CN117198865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311003645.6A CN117198865A (en) 2023-08-09 2023-08-09 Laser annealing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311003645.6A CN117198865A (en) 2023-08-09 2023-08-09 Laser annealing method and device

Publications (1)

Publication Number Publication Date
CN117198865A true CN117198865A (en) 2023-12-08

Family

ID=89002491

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311003645.6A Pending CN117198865A (en) 2023-08-09 2023-08-09 Laser annealing method and device

Country Status (1)

Country Link
CN (1) CN117198865A (en)

Similar Documents

Publication Publication Date Title
CN103286452B (en) Laser micropore processing method and laser micropore process equipment
CN106772320B (en) Laser radar's emission beam direction preliminary adjustment perpendicular arrangement
CN104020184A (en) Upward-lighting type X-ray fluorescence spectrophotometer and control method thereof
CN114453595B (en) Method and device for measuring quality of full-breadth beam of selective laser melting equipment
CN105259161A (en) Intelligently controlled laser plasma measurement device and method
CN101811229B (en) Laser processing method, laser processing apparatus and method for manufacturing solar panel
CN117198865A (en) Laser annealing method and device
JP2014013183A (en) X-ray stress measurement device and x-ray stress measurement method
KR20130089581A (en) Extending the lifetime of a deep uv laser in a wafer inspection tool
JP5328406B2 (en) Laser processing method, laser processing apparatus, and solar panel manufacturing method
CN108645338B (en) PSD-based self-calibration method and device for annunciator under vacuum
CN117612966A (en) Laser annealing device and method
TW201535459A (en) Specimen observing apparatus
CN216815959U (en) Rapid high-precision wide-spectrum optical wave plate detection system
KR20120040748A (en) Supporting device and light exposure device
JP2014153248A (en) Surface shape measurement device and surface shape measurement method
CN117590361B (en) Optical axis center testing method
CN217112855U (en) Optical module and laser processing apparatus
JP2010188396A (en) Laser beam machining method, laser beam machining device, and method for producing solar panel
JP2010112776A (en) Sample holder
KR20110035845A (en) Method of correcting in-line substrate inspection apparatus and in-line substrate inspection apparatus
JP5234652B2 (en) Laser processing state inspection device, laser processing device, and solar panel manufacturing method
CN110108237B (en) Optical detection device and detection method for parallel states of different surfaces in short distance
CN110823844A (en) Steel sample online component rapid analysis device and steel sample online analysis method
CN220752377U (en) Lens base adjusting device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination