CN117174563A - Plasma processing apparatus and method, pressure valve control apparatus and method, and pressure adjustment system - Google Patents

Abstract

Provided is a technique capable of suppressing pressure fluctuations in a plasma processing chamber. The plasma processing apparatus according to the present disclosure includes: a chamber; a gas supply unit configured to supply a process gas into the chamber; a power supply for generating a source radio frequency signal within the chamber for generating a plasma from a process gas; a storage unit for storing a source setting value, which is a setting value of a parameter of the source radio frequency signal, in advance; a pressure regulating valve connected to the chamber, configured to regulate an internal pressure of the chamber; an opening degree calculating section that calculates an opening degree of the pressure regulating valve, the opening degree being calculated based on the source setting value; and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree. A plasma processing method, a pressure valve control device, a pressure valve control method, and a pressure regulating system are also provided.

Description

Plasma processing apparatus and method, pressure valve control apparatus and method, and pressure adjustment system

Technical Field

Exemplary embodiments of the present disclosure relate to a plasma processing apparatus, a plasma processing method, a pressure valve control apparatus, a pressure valve control method, and a pressure adjustment system.

Background

As a technique for stabilizing plasma immediately after step switching, there is a technique described in patent document 1.

Prior art literature

Patent literature

Japanese patent application laid-open No. 2016-027592 of patent document 1

Disclosure of Invention

The present disclosure provides a technique capable of suppressing pressure fluctuations within a plasma processing chamber.

In one exemplary embodiment of the present disclosure, a plasma processing apparatus is provided. The plasma processing device is provided with: a chamber; a gas supply unit configured to supply a process gas into the chamber; a power supply that generates a source radio frequency signal within the chamber that generates a plasma from the process gas; a storage unit for storing a source setting value as a setting value of a parameter of the source radio frequency signal in advance; the pressure regulating valve is connected with the cavity and is used for regulating the internal pressure of the cavity; an opening degree calculation unit that calculates an opening degree of the pressure regulating valve, the opening degree being calculated based on the source setting; and an opening control unit that controls the opening of the pressure regulating valve based on the calculated opening.

Effects of the invention

According to an exemplary embodiment of the present disclosure, a technique capable of suppressing pressure fluctuations within a plasma processing chamber can be provided.

Drawings

Fig. 1 is a diagram for explaining a configuration example of a plasma processing system.

Fig. 2 is a diagram for explaining a configuration example of the capacitive coupling type plasma processing apparatus.

Fig. 3 is a block diagram showing an example of the configuration of the pressure control system 100.

Fig. 4 is a flowchart showing the present processing method.

Fig. 5 is an example of a timing chart of each process in the present processing method.

Fig. 6 is a block diagram showing an example of the structure of the pressure control system 100.

Fig. 7 is a block diagram showing an example of the configuration of the pressure control system 100.

Description of the reference numerals

A 1 … … plasma processing apparatus, a2 … … control unit, a2 … … storage unit, an 11 … … substrate support unit, a 20 … … gas supply unit, a 30 … … power source, a 42 … … pressure adjustment valve, a 50 … … pressure valve control unit, a 51 … … communication unit, a 52 … … calculation unit, a 55 … … opening calculation unit, a 56 … … storage unit, a 57 … … opening control unit, a 60 … … pressure sensor, and a 100 … … pressure adjustment system.

Detailed Description

Hereinafter, embodiments of the present disclosure will be described.

In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing device is provided with: a chamber; a gas supply unit configured to supply a process gas into the chamber; a power supply that generates a source radio frequency signal within the chamber that generates a plasma from the process gas; a storage unit for storing a source setting value as a setting value of a parameter of the source radio frequency signal in advance; the pressure regulating valve is connected with the cavity and is used for regulating the internal pressure of the cavity; an opening degree calculation unit that calculates an opening degree of the pressure regulating valve, the opening degree being calculated based on the source setting value; and an opening control unit that controls the opening of the pressure regulating valve based on the calculated opening.

In one exemplary embodiment, the source setpoint is at least one of a power, a voltage, a frequency, and a duty cycle of the source radio frequency signal.

In an exemplary embodiment, the method further comprises: and a substrate support section for supporting the substrate in the chamber, wherein the power supply further generates a bias signal to be supplied to the substrate support section, the storage section stores a bias set value as a set value of a parameter of the bias signal, and the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the bias set value stored in the storage section.

In one exemplary embodiment, the bias signal is a bias radio frequency signal and the bias setting is the power, voltage, frequency, or duty cycle of the bias radio frequency signal.

In one exemplary embodiment, the bias signal is a bias dc signal comprising a plurality of voltage pulses, and the bias setpoint is the voltage, frequency, or duty cycle of the voltage pulses.

In one exemplary embodiment, the storage section further stores a flow rate set value as a set value of the flow rate of the process gas, and the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the flow rate set value stored in the storage section.

In one exemplary embodiment, the pressure sensor is further provided to measure the internal pressure of the chamber, and the opening degree calculating unit switches from (a) an operation of calculating the opening degree of the pressure regulating valve based on the source set value stored in the storage unit to (b) an operation of calculating the opening degree of the pressure regulating valve based on the internal pressure of the chamber measured by the pressure sensor, based on the amount of change in the internal pressure of the chamber.

In one exemplary embodiment, the storage unit stores the gas type contained in the process gas, and the opening control unit calculates the opening of the pressure regulating valve based on whether or not the gas type stored in the storage unit is switched based on the source set value stored in the storage unit.

In one exemplary embodiment, the storage unit stores the film type contained in the substrate stored in the chamber, and the opening control unit calculates the opening of the pressure regulating valve based on whether or not the film type stored in the storage unit is switched based on the source set value stored in the storage unit.

In one exemplary embodiment, the substrate stored in the chamber includes a mask including an opening pattern, the storage portion stores an opening ratio of an opening included in the opening pattern, and the opening control portion calculates the opening of the pressure regulating valve based on whether or not the opening ratio stored in the storage portion is switched based on a source set value stored in the storage portion.

In one exemplary embodiment, the storage section further stores a transfer function indicating a relationship between the source set value and the internal pressure of the chamber, and the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the transfer function.

In an exemplary embodiment, the method further comprises: the pressure sensor measures the internal pressure of the chamber, the opening calculating unit acquires the internal pressure of the chamber and the opening of the pressure regulating valve during execution of the plasma process, and the opening calculating unit updates the transfer function stored in the storage unit based on the correlation between the source setting value and the acquired internal pressure of the chamber and the opening of the pressure regulating valve.

In one exemplary embodiment, the plasma processing apparatus further includes: a substrate support portion for supporting a substrate in the chamber; and an upper electrode facing the substrate support part, the power supply further generating a DC signal applied to the upper electrode, the storage part storing a DC set value as a set value of a parameter of the DC signal, the opening degree calculating part further calculating the opening degree of the pressure regulating valve based on the DC set value stored in the storage part.

In one exemplary embodiment, a plasma processing method is provided that is performed in a plasma processing apparatus having a chamber. The plasma treatment method comprises the following steps: a step of supplying a process gas into the chamber; generating a source rf signal for generating a plasma from a process gas in the chamber; a step of storing a source setting value as a setting value of a parameter of the source radio frequency signal in advance; and calculating an opening degree of a pressure regulating valve configured to regulate the internal pressure of the chamber, the opening degree being calculated based on the source set value.

In one exemplary embodiment, a pressure valve control apparatus is provided that controls an opening degree of a pressure regulating valve connected to a chamber. The pressure valve control device is provided with: a communication unit configured to receive a source set value, which is a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; an opening degree calculating section that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication section; and an opening control unit that controls the opening of the pressure regulating valve based on the calculated opening.

In one exemplary embodiment, the pressure valve control device further includes: and a storage unit configured to store a transfer function having the source setting value received by the communication unit as an input, wherein the opening degree calculation unit reads the transfer function stored in the storage unit, and calculates the opening degree of the pressure regulating valve based on the source setting value received by the communication unit and the transfer function read from the storage unit.

In one exemplary embodiment, when the communication section receives a source setting value, the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function.

In one exemplary embodiment, the communication section receives a transfer function having the source setting value as an input, and the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value received by the communication section and the transfer function.

In one exemplary embodiment, the opening degree calculating section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function when the communication section receives the source setting value and the transfer function.

In one exemplary embodiment, a pressure valve control apparatus is provided that controls an opening degree of a pressure regulating valve connected to a chamber. The pressure valve control device is provided with: a communication section configured to receive an opening of the pressure control valve, the opening being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and an opening control unit that controls the opening of the pressure regulating valve based on the received opening.

In one exemplary embodiment, the opening degree of the pressure regulating valve is calculated based on the source set point and a transfer function representing a relationship of the source set point to an internal pressure of the chamber.

In one exemplary embodiment, a pressure valve control method is provided for controlling an opening degree of a pressure regulating valve connected to a chamber. The pressure valve control method comprises the following steps: a step of receiving a source set value, which is a set value of a parameter of a source rf signal, which is a signal for generating plasma in the chamber; a step of calculating the opening of the pressure regulating valve based on the received source set value; and controlling the opening of the pressure regulating valve based on the calculated opening.

In one exemplary embodiment, a pressure valve control method is provided for controlling an opening degree of a pressure regulating valve connected to a chamber. The pressure valve control method includes: receiving an opening degree of the pressure control valve, wherein the opening degree is calculated based on a source set value, the source set value is a set value of a parameter of a source radio frequency signal, and the source radio frequency signal is a signal for generating plasma in the chamber; and controlling the opening of the pressure regulating valve based on the received opening.

In one exemplary embodiment, a pressure regulation system is provided. The pressure regulating system is provided with: the pressure regulating valve is connected with the chamber; and a pressure valve control device that controls the opening degree of the pressure regulating valve, the pressure valve control device controlling the opening degree of the pressure regulating valve connected to the chamber, the pressure valve control device including: a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; an opening degree calculating unit that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication unit; and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

In one exemplary embodiment, a pressure regulation system is provided. The pressure regulating system is provided with: the pressure regulating valve is connected with the chamber; and a pressure valve control device that controls the opening degree of the pressure regulating valve, the pressure valve control device including: a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; a storage unit configured to store a transfer function having the source setting value received by the communication unit as an input; an opening degree calculating unit that reads the transfer function stored in the storage unit, and calculates an opening degree of the pressure regulating valve based on the source setting value received by the communication unit and the transfer function read from the storage unit; and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

In one exemplary embodiment, a pressure regulation system is provided. The pressure regulating system is provided with: the pressure regulating valve is connected with the chamber; and a pressure valve control device that controls the opening degree of the pressure regulating valve, the pressure valve control device including: a communication unit configured to receive an opening degree of the pressure control valve, the opening degree being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the received opening degree.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the drawings, the same or similar elements are denoted by the same reference numerals, and repetitive description thereof will be omitted. Unless otherwise stated, the positional relationship of up, down, left, right, and the like is described based on the positional relationship shown in the drawings. The dimensional proportions in the drawings do not represent actual proportions, and the actual proportions are not limited to the illustration proportions.

Constituent example of plasma processing System

Fig. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generating section 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has at least one gas supply port for supplying at least one process gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

The plasma generating section 12 is configured to generate plasma from at least one process gas supplied into the plasma processing space. The Plasma formed in the Plasma processing space may also be a capacitively coupled Plasma (CCP; capacitively Coupled Plasma), an inductively coupled Plasma (ICP; inductively Coupled Plasma), an ECR Plasma (Electron-Cyclotron-Resonance Plasma), a helicon wave excited Plasma (HWP: helicon Wave Plasma), or a surface wave Plasma (SWP: surface Wave Plasma), or the like. In addition, various types of plasma generating sections including an alternating Current (Alternating Current) plasma generating section and a Direct Current (Direct Current) plasma generating section may be used. In one embodiment, the alternating current signal (alternating current) used in the alternating current plasma generating section has a frequency in the range of 100KHz to 10 GHz. Thus, the alternating current signal includes a Radio Frequency (Radio Frequency) signal and a microwave signal. In one embodiment, the radio frequency signal has a frequency in the range of 100KHz to 150 MHz.

The control section (circuit) 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 can be configured to control each element of the plasma processing apparatus 1 so as to perform various steps described herein. In one embodiment, a part or the whole of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized by a computer 2a, for example. The processing unit 2a1 can be configured to perform various control operations by reading out a program from the storage unit 2a2 and executing the read-out program. The program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium, if necessary. The acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be CPU (Central Processing Unit). The storage portion 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive) or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as LAN (Local Area Network).

Constituent example of plasma processing apparatus

A configuration example of a capacitive coupling type plasma processing apparatus as an example of the plasma processing apparatus 1 will be described below. Fig. 2 is a diagram for explaining a configuration example of the capacitive coupling type plasma processing apparatus.

The capacitively-coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 further includes a substrate support portion 11 and a gas introduction portion. The gas introduction portion is configured to introduce at least one process gas into the ion processing chamber 10. The gas introduction part includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the top (ceiling) of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

In one embodiment, the body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111 a. Ceramic component 1111a has a central region 111a. In one embodiment, ceramic component 1111a also has annular region 111b. In addition, an annular electrostatic chuck or another member surrounding the electrostatic chuck 1111 such as an annular insulating member may have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one Radio Frequency/Direct Current electrode coupled to a Radio Frequency (Radio Frequency) power supply 31 and/or a Direct Current (Direct Current) power supply 32 described later may be disposed in the ceramic member 1111 a. In this case, at least one radio frequency/direct current electrode functions as a lower electrode. In the case where a bias rf signal and/or a dc signal described later is supplied to at least one rf/dc electrode, the rf/dc electrode is also referred to as a bias electrode. The conductive member of the base 1110 and at least one rf/dc electrode may also function as a plurality of lower electrodes. The electrostatic electrode 1111b may also function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

The ring assembly 112 includes one or more ring members. In an embodiment, the one or more annular members comprise one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

The substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The attemperation module may also include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110 a. In one embodiment, a flow path 1110a is formed within the base 1110 and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. The substrate support 11 may include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the rear surface of the substrate W and the central region 111 a.

The showerhead 13 is configured to introduce at least one process gas from the gas supply section 20 into the plasma processing space 10 s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b from the plurality of gas introduction ports 13c. Furthermore, the showerhead 13 contains at least one upper electrode. The gas introduction portion may include, in addition to the shower head 13, one or more side gas injection portions (SGI: side Gas Injector) attached to one or more openings formed in the side wall 10 a.

The gas supply 20 may also comprise at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the gas sources 21 corresponding to each other to the showerhead 13 via the flow controllers 22 corresponding to each other. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may include at least one flow rate modulation device for modulating or pulsing the flow rate of at least one process gas.

The power supply 30 includes a radio frequency power supply 31 as coupled to the plasma processing chamber 10 via at least one impedance match circuit. The radio frequency power supply 31 is configured to supply at least one radio frequency signal (radio frequency power) to at least one lower electrode and/or at least one upper electrode. Thereby, a plasma is formed from at least one process gas supplied to the plasma processing space 10 s. Accordingly, the rf power supply 31 can function as at least a part of the plasma generating section 12. Further, by supplying a bias radio frequency signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

In one embodiment, the rf power supply 31 includes a first rf generating part 31a and a second rf generating part 31b. The first rf generating section 31a is configured to be coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and to generate a source rf signal (source rf power) for generating plasma. In one embodiment, the source radio frequency signal has a frequency in the range of 10MHz to 150 MHz. In one embodiment, the first rf generating unit 31a may be configured to generate a plurality of source rf signals having different frequencies. The generated one or more source radio frequency signals are supplied to at least one lower electrode and/or at least one upper electrode.

The second rf generating section 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit, and to generate a bias rf signal (bias rf power). The frequency of the bias radio frequency signal may be the same as or different from the frequency of the source radio frequency signal. In an embodiment, the bias radio frequency signal has a frequency lower than the frequency of the source radio frequency signal. In one embodiment, the bias radio frequency signal has a frequency in the range of 100kHz to 60 MHz. In one embodiment, the second rf generating unit 31b may be configured to generate a plurality of bias rf signals having different frequencies. The generated one or more bias radio frequency signals are supplied to the at least one lower electrode. Further, in various embodiments, at least one of the source radio frequency signal and the bias radio frequency signal may be pulsed.

In addition, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The dc power supply 32 includes a first dc generation unit 32a and a second dc generation unit 32b. In one embodiment, the first dc generator 32a is connected to at least one lower electrode, and generates a first dc signal. The generated first bias dc signal is applied to at least one lower electrode. In one embodiment, the second dc generator 32b is connected to at least one upper electrode, and generates a second dc signal. The generated second direct current signal is applied to at least one upper electrode.

In various embodiments, the first and second dc signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode. The voltage pulses may also have a pulse shape that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generating section for generating a sequence of voltage pulses from a dc signal is connected between the first dc generating section 32a and at least one lower electrode. Therefore, the first dc generator 32a and the waveform generator constitute a voltage pulse generator. When the second dc generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have either a positive or a negative polarity. In addition, the sequence of voltage pulses may also contain one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. The first and second dc generating units 32a and 32b may be provided in addition to the rf power supply 31, or the first dc generating unit 32a may be provided in place of the second rf generating unit 31 b.

The exhaust system 40 can be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 may also include a pressure regulating valve 42 and a vacuum pump 44. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve 42. In the present embodiment, the conductivity of the pressure regulating valve 42 changes according to the opening degree thereof. Further, a pressure valve control device 50 that controls the opening of the pressure regulating valve 42 to control the pressure of the plasma processing space 10s may be provided. The pressure valve control device 50 may be a part of the plasma processing apparatus 1 or may be an external part of the plasma processing apparatus 1. The vacuum pump 44 may also comprise a turbo-molecular pump, a dry pump, or a combination thereof. At least a part of the control section 2 is the pressure regulating valve 42 and/or the pressure control device 50 can constitute the pressure regulating system 100.

Fig. 3 is a block diagram showing an example of the configuration of the pressure control system 100. The pressure regulating system 100 can include at least a part of the control section 2, the pressure regulating valve 42, and a pressure regulating device. The pressure valve control device 50 includes a communication unit 51, a differential calculation unit 52, an FB control unit 53, an FF control unit 54, an opening degree calculation unit 55, a storage unit 56, and an opening degree control unit 57. The control unit 2 may have a part or all of the components included in the pressure valve control device 50. In one embodiment, part or all of the functions included in the pressure valve control device 50 and constituting the execution may be executed in the control unit 2 (see fig. 6 and 7 as an example).

The communication unit 51 may be an interface configured to communicate between the pressure valve control device 50 and the control unit 2. The communication unit 51 receives control data from the control unit 2. The communication unit 51 can communicate with each component of the control unit 2 via the communication interface 2a 3. The communication unit 51 can store a part or all of the control data received from the control unit 2 in the storage unit 56. The communication unit 51 can send part or all of the control data received from the control unit 2 to the opening degree calculation unit 55.

The communication unit 51 receives a measured value of the pressure (hereinafter, also referred to as "chamber pressure") in the plasma processing chamber 10 measured by the pressure sensor 60. The communication section 51 can receive a measured value of the chamber pressure from the pressure sensor 60. The communication unit 51 may receive a measured value of the chamber pressure via the control unit 2.

Further, the communication unit 51 can receive opening degree data related to the opening degree of the pressure regulating valve 42 from the pressure regulating valve 42. The communication unit 51 can transmit the opening degree data to the control unit 2. The control unit 2 can store the opening degree data received from the communication unit 51 in the storage unit 2a 2. The control unit 2 may not receive opening degree data from the pressure control valve 42 via the pressure valve control device 50. The communication unit 51 may store the opening degree data received from the pressure control valve 42 in the storage unit 56. The opening degree data can be an encoder value for controlling the opening degree of the pressure control valve 42. The control unit 2 can control the operation timing and/or the operation speed of the pressure control valve 42 based on the opening degree data.

The difference calculating unit 52 calculates a pressure difference that is a difference between the set value of the chamber pressure and the measured value of the chamber pressure. In one example, the calculation unit 52 may read the set value of the chamber pressure from the storage unit 56.

The FB control section 53 calculates an FB correction value for feedback control of the chamber pressure. In one example, the FB correction value is a value for correcting the opening degree of the pressure-regulating valve 42. The FB control section 53 may calculate the FB correction value based on the pressure difference calculated by the difference calculation section 52.

The FF control portion 54 calculates an FF correction value for feedforward control of the chamber pressure. In one example, the FF correction value is a value for correcting the opening degree of the pressure-regulating valve 42. The FF control section 54 may calculate the FF correction value based on the control data received by the communication section 51 and/or the control data stored in the storage section 56.

The opening degree calculating unit 55 includes an FB control unit 53 and an FF control unit 54. The opening degree calculating portion 55 calculates the opening degree of the pressure-regulating valve 42 based on the FB correction value and/or the FF correction value. Further, the opening degree calculating section 55 controls the opening degree of the pressure regulating valve 42 based on the calculated opening degree. Further, the FB control section 53 and/or the FF control section 54 may control the opening degree of the pressure regulating valve 42 with the FB correction value and/or the FF correction value as the opening degree. In the present disclosure, the calculation operation performed by the opening degree control unit 55 may be a calculation operation performed by the FB control unit 53 and/or the FF control unit 54.

The opening degree calculating unit 55 can receive opening degree data related to the opening degree of the pressure regulating valve 42 from the pressure regulating valve 42. The opening degree data can be an encoder value that controls the opening degree of the pressure regulating valve 42. The opening degree calculating unit 55 can control the operation timing and/or the operation speed of the pressure regulating valve 42 based on the opening degree data. The opening degree calculating portion 55 may store the opening degree data received from the pressure regulating valve 42 in the storage portion 56.

The storage unit 56 stores data related to control of the pressure control valve 42. In one embodiment, the data stored in the storage unit 56 may include part or all of control data described later. As an example, the control data stored in the storage unit 56 may include a transfer function.

< one example of plasma treatment method >)

Fig. 4 is a flowchart showing a plasma processing method (hereinafter also referred to as "the present processing method") according to an exemplary embodiment. As shown in fig. 4, the present processing method includes a step (ST 1) of reading control data, a step (ST 2) of preparing a substrate, a step (ST 3) of etching a substrate, and a step (ST 4) of updating a transfer function. The processing in each process may be performed in a plasma processing system as shown in fig. 1. In the following, an example will be described in which the control unit 2 controls each part of the plasma processing apparatus 1, and in the pressure control system 100 shown in fig. 3, the pressure valve control device 50 controls the pressure control valve 42 to execute the present processing method.

(step ST1: reading and storing control data)

In step ST1, control data for executing the present processing method is read out. As an example, a part or all of the control data may be read from the storage unit 2a2 included in the control unit 2. In step ST1, control data for executing the present processing method is stored. In one embodiment, a portion or all of the control data may be stored in the memory portion 56 of the pressure valve control device 50.

The control data is data for controlling each part of the plasma processing apparatus 1 to execute the present processing method. As an example, the control data may include recipe data and a transfer function. The recipe data may include the set value of the parameter of the source rf signal in the etching process in step ST 3. As an example, the parameters of the source rf signal may include the power, voltage, frequency, duty cycle, and supply time of the source rf signal. In addition, the recipe data can contain settings for parameters of the bias signal (bias rf signal and bias dc signal). As an example, the parameters of the bias signal may include power, voltage, frequency, duty cycle, and supply time of the bias signal. In addition, the recipe data can include a set point of a second direct current signal applied to the upper electrode. As an example, the parameters of the second dc signal may include the voltage of the second dc signal and the application time of the second dc signal. In addition, the recipe data can include parameters of the process gas in the etching process. As an example, the parameters of the process gas may include the flow rate of the process gas, the gas type included in the process gas, the dissociation degree of the gas included in the process gas, the type and amount of by-products generated from the gas included in the process gas, the supply time of the process gas, and the like.

The transfer function is a function in which a set value of one or more parameters included in the recipe data is input, and a set value related to the adjustment of the pressure in the plasma processing space 10s is output. As an example, the transfer function may be a function in which a set value of a parameter of the source rf signal and/or a set value of a parameter of the process gas is input, and an opening of the pressure control valve 42, a correction value of the opening, or a pressure of the plasma processing space 10s is output. As an example, the transfer function may include information of a time constant. The information of the time constant may be, for example, a time until the internal pressure starts to change when the opening of the pressure control valve 42 is set to a predetermined opening in order to set the internal pressure of the plasma processing chamber 10 to the predetermined pressure, and a time until the internal pressure reaches the predetermined pressure. The information of the time constant may be a time when the supply of the process gas from the gas supply unit 20 to the plasma processing chamber 10 starts to change and a time when the internal pressure becomes substantially constant. The transfer function may be generated or updated by machine learning.

Further, the transfer function can be a function modeling a relationship between the amount of change in the plurality of parameters and the amount of change in the chamber pressure. In one example, the transfer function can be obtained as follows. That is, first, in a state where the opening degree of the pressure regulating valve 42 is fixed, a plurality of parameter values are changed and a database is generated based on the relation between these change amounts and the change amount of the chamber pressure. Then, a relationship between the amount of change in the plurality of parameters and the amount of change in the chamber pressure is modeled based on the generated database. A transfer function is then generated based on the modeled relationship. In addition, the transfer function may be prepared separately for each recipe data.

As an example, a transfer function may be associated with respect to a recipe data. In addition, for example, when one recipe data includes a plurality of steps, different transfer functions may be associated with each step. As an example, the plurality of steps can be the first step to the third step as shown in fig. 5. The recipe data and the transfer function may be stored in the storage unit 2a2 and/or the storage unit 56 in advance in association with each other. The transfer function may be read from the storage unit 2a2 and/or the storage unit 56 based on the recipe data, so that the recipe data and the transfer function may be associated with each other.

As an example, the storage unit 2a2 may store a part or all of the control data, and the processing unit 2a1 reads out the control data from the storage unit 2a 2. The control unit 2 may transmit the control data read out from the storage unit 2a2 to the communication unit 51 via the communication interface 2a 3. The communication unit 51 can store the control data received from the control unit 2 in the storage unit 56. Further, as an example, the communication unit 51 may transmit the control data received from the control unit 2 to the opening degree calculation unit 55. Further, as an example, the storage unit 56 may store a part or all of the control data, and the FF control unit 54 reads out the control data from the storage unit 56.

The timing of reading and/or storing a part or all of the execution control data in step ST1 can be arbitrarily performed. As an example, the control data can be read and/or stored before the step ST3 (step of etching the substrate) is performed. Further, as an example, the reading and/or storing of a part of the control data can be performed at a different point in time than the reading and/or storing of another part of the control data. In the configuration example shown in fig. 3, one or two or more transfer functions may be read from the storage unit 2a2 and stored in the storage unit 56, and then the recipe data may be read from the storage unit 2a2 and transmitted from the control unit 2 to the communication unit 51, for example. In the configuration example shown in fig. 3, for example, the reading and storage of the transfer function may be performed before the step ST2, and the reading and storage of the recipe data may be performed after the step ST 2.

In addition, as an example, each configuration of the pressure control device 50 may read out control data or the like from the storage unit 2a2 via the communication unit 51 instead of the storage unit 56. In this case, the pressure valve control device 50 may have a storage unit 56 that stores the control data 50 in advance, as shown in fig. 6. In the example shown in fig. 6, the pressure valve control device 50 may be configured to backup or temporarily store control data received by the communication unit 51.

(step ST2: preparation of substrate)

In step ST2, a substrate W is prepared in the plasma processing space 10s of the plasma processing apparatus 1. Specifically, the substrate W is held by the substrate support 11 by the electrostatic chuck 1111. The substrate W may be a substrate used in the manufacture of semiconductor devices. The substrate W includes an etching film and a mask film. The etching film is a film to be etched in the present processing method. In the present processing method, the etching film is etched by plasma generated in the plasma processing space 10s, using the mask film as a mask.

(step ST3: etching of substrate)

In step ST3, the substrate W is etched. The step ST3 includes a step of generating plasma (ST 31) and a step of controlling the pressure of the plasma processing space 10s (ST 32). The step ST31 may include a step of supplying a process gas into the plasma processing chamber 10, a step of supplying a source rf signal, and a step of supplying a bias rf signal. In each step, a plasma containing an active species is generated from the process gas, and the film is etched by the active species. The order in which the supply of the process gas, the source rf signal, and the bias signal is started is arbitrary. In step ST32, the pressure in the plasma processing space 10s is controlled. The generation of plasma in step ST31 and the control of the pressure in step ST32 can be performed in parallel. Hereinafter, the process ST3 will be described in detail with reference to fig. 4 and 5.

Fig. 5 is an example of a timing chart of each process in the present processing method. In the timing chart of fig. 5, the horizontal axis represents time, and the vertical axis represents values (relative values) of the respective parameters.

In step ST31, plasma is generated in the plasma processing space 10 s. The control unit 2 controls the plasma generating unit 12 to generate plasma in the plasma processing space 10s based on the recipe data read in the step ST 1. On the other hand, in the pressure valve control device 50, the opening degree calculating unit 55 reads one or two or more transfer functions from the storage unit 56 based on the recipe data received from the control unit 2 via the communication unit 51. In the configuration example shown in fig. 3, one or two or more transfer functions may be stored in the storage unit 56 before the communication unit 51 receives the recipe data from the control unit 2. The opening degree calculating unit 55 calculates the opening degree of the pressure regulating valve 42 based on the recipe data and the transfer function. The opening degree control section 57 controls the opening degree of the pressure regulating valve 42 based on the calculated opening degree.

In the example shown in fig. 5, the etching step ST3 includes a first step and a second step. As an example, the recipe data includes the frequency, power, and duty cycle of the source rf signal in each step. The recipe data includes the type of the process gas and the flow rate of the process gas in each step.

In the example shown in fig. 5, the source rf signal is a pulse wave periodically comprising pulses made up of radio frequencies. That is, the source rf signal is a pulse wave that periodically repeats a period in which the effective value of the source rf power (hereinafter, also simply referred to as "power") is L and a period in which the power is H. In a first step, the power of the source radio frequency signal is L. In addition, in the second step, the power of the source radio frequency signal is H. The power H is a power larger than the power L. The magnitude of the source rf power, the frequency of the pulse wave, and the frequency of the rf constituting the pulse wave may be appropriately set based on the etching process performed. In one example, the power L may be 0W. The duty cycle of the source radio frequency signal may be set appropriately based on the etching process performed. The duty ratio is a ratio of a period of high power to a period of low power in one cycle of a pulse wave of a source radio frequency signal. For example, in the second step shown in fig. 5, the duty ratio is a ratio of a period in which the source radio frequency power is H to a period in which the source radio frequency power is L in one cycle of the pulse wave of the source radio frequency signal.

In step ST31, the control unit 2 can control the first radio frequency generation unit 31a (see fig. 2) included in the power supply 30 to generate a source radio frequency signal. The control unit 2 can control the second rf generation unit 31b (see fig. 2) included in the power supply 30 to generate the bias rf signal. In one example, the plasma may be generated in the plasma processing chamber 10 by the rf signal generated by the second rf generator 31 b. That is, the radio frequency signal generated by the second radio frequency generating section 31b can also function as a "source radio frequency signal" in the present disclosure.

In the first step, the control unit 2 controls the gas supply unit 20 to supply the process gas into the plasma processing chamber 10 at a flow rate S2 based on the recipe data read from the storage unit 2a 2. The control unit 2 controls the rf power supply 31 as a source rf signal based on the read recipe data, and generates the pulse wave described above to supply to the substrate support unit 11. Thus, in the plasma processing space 10s, plasma is generated from the process gas, and the substrate W is etched. The control unit 2 may control the radio frequency power supply 31 based on the recipe data, and generate a bias radio frequency signal or a bias dc signal to supply to the substrate support unit 11.

In the first step, the pressure valve control device 50 controls the opening degree of the pressure control valve 42 to control the chamber pressure (step ST 32). The pressure valve control device 50 may control the opening degree of the pressure regulating valve 42 by feed-forward control (hereinafter also referred to as "FF control") based on the recipe data received by the communication portion 51. As an example, in the opening degree calculating section 55, the FF control section 54 may calculate the opening degree of the pressure regulating valve 42 based on the source set value received by the communication section 51 and the transfer function read out from the storage section 56. The source set point can be a set point for a parameter of the source radio frequency signal. In the opening degree calculating section 55, when the communication section 51 receives a source setting value that is a setting value of a parameter of the source radio frequency signal, the FF control section 54 can calculate the opening degree of the pressure regulating valve 42 based on the source setting value received by the communication section 51 and a transfer function that takes the source setting value as an input. The transfer function having the source setting value as an input can be read from the storage unit 56 based on the source setting value. The transfer function can be a function representing the relationship of the source set point to the chamber pressure.

The pressure valve control device 50 may control the opening degree of the pressure regulating valve 42 by feedback control (hereinafter also referred to as "FB control") based on the chamber pressure measured by the pressure sensor. In the present processing method, first, at the start of each step, the pressure valve control device 50 controls the opening degree of the pressure regulating valve 42 by FF control. Then, after the chamber pressure becomes the steady state, the pressure valve control device 50 controls the opening degree of the pressure regulating valve 42 by FB control. FB control is performed based on the actually measured chamber pressure. In the first step of fig. 5, the opening degree of the pressure regulating valve 42 is substantially fixed at the opening degree V1, and the chamber pressure is in a steady state.

The etching process performed in the etching step ST3 proceeds from the first step to the second step at time T1 (see fig. 5). When the etching process is shifted from the first step to the second step, the control unit 2 controls the gas supply unit 20 based on the recipe data to change the flow rate of the process gas from the flow rate S1 to the flow rate S2. The control unit 2 changes the source rf signal from a pulse wave having a power L to a pulse wave having a power H based on the recipe data. Here, when the flow rate of the process gas supplied into the plasma processing chamber 10 increases, the chamber pressure can increase. Further, when the source rf power increases, since the dissociation amount of the process gas in the plasma processing space 10s increases, the chamber pressure can rise. The dissociation amount of the process gas in the plasma processing space 10s can also be changed according to the kind of gas contained in the process gas.

The pressure valve control device 50 controls the opening degree of the pressure regulating valve 42 based on the change in the parameter of the source rf signal at time T1, and the change in the type and/or flow rate of the gas contained in the process gas. This can suppress the fluctuation of the chamber pressure. At this time, the pressure valve control device 50 switches the control of the opening degree of the pressure regulating valve 42 from FB control to FF control, and controls the chamber pressure. Specifically, first, the FF control unit 54 included in the pressure valve control device 50 calculates an FF correction value for correcting the opening degree of the pressure regulating valve 42 based on the recipe data received from the control unit 2 by the communication unit 51 and the transfer function read out from the storage unit 56. The transfer function can be associated with the second step included in the recipe data received from the control unit 2 by the communication unit 51. Then, the opening degree calculating section 55 calculates the opening degree of the pressure regulating valve 42 based on the FF correction value calculated by the FF control section 54, and adjusts the opening degree of the pressure regulating valve 42. The transfer function can be a parameter of the source RF signal, a gas type contained in the process gas, and/or a flow rate of each gas typeAnd an input, the opening of the pressure regulating valve 42 being a function of the output. The parameter of the source radio frequency signal can be the power, frequency, and duty cycle of the source radio frequency signal. Further, the FF control may start before the time T1. In the example shown in fig. 5, FF is controlled to be at a time Δt earlier than time T1 _a Starting at the moment of (a). The storage unit 56 stores in advance a film type of a film to be etched and/or a mask included in the substrate W, and the pressure control system 100 may execute FF control based on the film type stored in advance. Further, the transfer function can be a function of the aperture ratio in the aperture pattern further based on the mask. The chamber pressure may vary depending on the type of film to be etched and/or the type of film to be masked included in the substrate W. The chamber pressure may also vary according to the aperture ratio of the mask included in the substrate W.

In one example, FF control is performed based on various set values included in the recipe data. The set value may include a set value of power of the source rf signal, a set value of frequency of the source rf signal, a set value of duty ratio of the source rf signal, a set value of flow rate of the process gas, and a set value of variation of the flow rate of the process gas. The amount of change in the flow rate of the process gas may be an absolute amount of change or may be an amount of change per unit time. In one example, FF control may be performed based on a set value of a parameter of the bias rf signal and/or the bias dc signal included in the recipe data. For example, the control section 2 may be executed based on the effective value of the power of the bias radio frequency signal and the frequency or the voltage of the bias direct current signal. In the case where the bias dc signal contains a sequence of voltage pulses, FF control may be performed based on the frequency and/or duty cycle of the sequence of voltage pulses.

The pressure regulating valve 42 performs FF control based on the recipe data, and when the chamber pressure becomes a steady state, the pressure valve control device 50 (or the opening degree calculating section 55) switches the control of the pressure regulating valve 42 from FF control to FB control. In the example shown in fig. 5, the pressure valve control device 50 determines that the opening degree of the pressure control valve 42 is substantially fixed at the opening degree V2, and switches the control of the pressure control valve 42 to FB control at a time T2 when the chamber pressure is in a steady state. In one example, the control unit 2 may determine that the chamber pressure is in a steady state when the amount of change in the chamber pressure during a predetermined period or the amount of change in the chamber pressure per unit time is equal to or less than a predetermined value. Further, the pressure valve control device 50 may determine that the chamber pressure is in a steady state when the amount of change (absolute amount) in the opening degree of the pressure regulating valve 42 in a period set in advance or the amount of change in the opening degree of the pressure regulating valve 42 in a unit time is equal to or smaller than a value set in advance. Then, after time T2, the pressure valve control device 50 controls the opening degree of the pressure regulating valve 42 based on the chamber pressure measured by the pressure sensor. In one example, the communication unit 51 may receive a measured value of the chamber pressure from the control unit 2 or the pressure sensor. The difference calculating unit 52 calculates a pressure difference that is a difference between the set value of the chamber pressure and the measured value of the chamber pressure. Further, the FB control section 53 receives the pressure difference from the differential calculation section 52, and calculates an FB correction value that corrects the opening degree of the pressure-regulating valve 42 based on the pressure difference. Then, the opening degree calculating section 55 calculates the opening degree of the pressure regulating valve 42 based on the FB correction value, and adjusts the opening degree of the pressure regulating valve 42.

The etching process performed in the etching step ST3 proceeds from the second step to the third step at time T3 (see fig. 5). In this example, when the etching process is shifted from the second step to the third step, the control unit 2 controls the gas supply unit 20 based on the recipe data so that the flow rate of the process gas changes from the flow rate S2 to the flow rate S1. The control unit 2 changes the source rf signal from a pulse wave having a power H to a pulse wave having a power L based on the recipe data. Here, when the flow rate of the process gas supplied into the plasma processing chamber 10 decreases, the chamber pressure can be reduced. Further, when the source rf power is reduced, the chamber pressure can be lowered because the dissociation amount of the process gas in the plasma processing space 10s is reduced.

The pressure valve control device 50 controls the opening degree of the pressure regulating valve 42 based on the change in the parameter of the source rf signal, the change in the type of gas contained in the process gas, and/or the flow rate of each type of gas at time t 3. Thereby, the chamber pressure can be suppressedAnd (3) variation. At this time, the pressure valve control device 50 switches the control of the opening degree of the pressure regulating valve 42 from FB control to FF control, and controls the chamber pressure, similarly to the start of the second step at time t 1. Specifically, first, the FF control unit 54 included in the pressure valve control device 50 calculates an FF correction value for correcting the opening degree of the pressure regulating valve 42 based on the recipe data received from the control unit 2 by the communication unit 51 and the transfer function read out from the storage unit 56. The transfer function can be associated with the third step included in the recipe data received from the control unit 2 by the communication unit 51. The FF control unit 54 may adjust the time for starting to change the opening degree of the pressure control valve 42 based on the transfer function. Then, the opening degree calculating section 55 calculates the opening degree of the pressure regulating valve 42 based on the FF correction value calculated by the FF control section 54, and adjusts the opening degree of the pressure regulating valve 42. Further, the FF control may start before the time t 3. In the example shown in fig. 5, FF is controlled to be at a time Δt earlier than time T3 _b Starting at the moment of (a).

The pressure control valve 42 performs FF control based on the recipe data, and when the chamber pressure becomes steady state, the pressure valve control device 50 (or the opening degree calculating section 55) switches the control of the pressure control valve 42 from FF control to FB control in the same manner as the second step. In the example shown in fig. 5, the pressure valve control device 50 switches the control of the pressure control valve 42 to FB control at a time T2 when it is determined that the opening degree of the pressure control valve 42 is substantially fixed at the opening degree V1 and the chamber pressure is in a steady state. Then, when performing the processing based on the steps specified by the recipe data, the control section 2 stops the supply of the source rf signal and the processing gas. Thereby, step ST3 ends.

In the present processing method, since the pressure regulating valve 42 is controlled based on a set value other than the parameter of the source rf signal included in the recipe data, even if the set value of the parameter changes in the recipe data during the plasma processing, the fluctuation of the chamber pressure can be suppressed. In addition, in the execution of the present processing method, the chamber pressure can vary for various reasons. In the present processing method, it is possible to suppress a fluctuation in the chamber pressure due to a change in the set value included in the recipe data. In the respective configuration examples shown in fig. 3, 6 and 7, the control unit 2 or the pressure valve control device 50 may simultaneously execute FF control and FB control.

(step ST4: updating transfer function)

The present processing method may include step ST4 of updating the transfer function used in step ST 3. In one example, the transfer function may be updated based on the chamber pressure and the opening degree of the pressure regulating valve 42 in step ST 3. For example, in the FF control in step ST3, the control unit 2 measures the chamber pressure and the opening degree of the pressure regulating valve 42. Then, the control unit 2 may calculate data on the set values other than the parameters of the source rf signal and/or the actual measured values other than the parameters of the source rf signal included in the recipe data, the actual measured values of the chamber pressure and the actual measured values of the opening of the pressure regulating valve 42, and update the transfer function stored in the storage unit 2a2 based on the data on the correlation. In one example, the other set values and actual values may include set values and actual values of parameters of bias signals (bias rf signals and bias dc signals), set values and actual values of second dc signals applied to the upper electrode, set values and actual values of parameters of the process gas supplied in step ST3, and set values and actual values of parameters of the process gas. The transfer function may be updated based on a plurality of correlation data calculated by performing the present processing method a plurality of times. Furthermore, the transfer function may be updated by machine learning. The transfer function may be updated in real time during the execution of the step ST3 based on the correlation data calculated during the execution of the step ST 3.

Fig. 6 is a block diagram showing another example of the configuration of the pressure control system 100. The pressure adjustment system 100 in this example is different from the pressure adjustment system 100 shown in fig. 3 at least in that recipe data and transfer functions are stored in the storage section 2a2 in advance. That is, in this example, the opening degree calculating unit 55 can read one or two or more transfer functions from the storage unit 2a2 via the communication unit 51, instead of from the storage unit 56 (see fig. 3), based on the recipe data received by the communication unit 51. In this example, the control unit 2 may transmit the recipe data and one or two or more transfer functions to the opening degree calculating unit 55 via the communication unit 51. That is, in this example, the transfer function used in the opening degree calculating section 55 may be selected by the control section 2 or may be selected by the opening degree calculating section 55.

As an example, the communication unit 51 receives a source set value and a transfer function, which are set values of parameters of the source radio frequency signal. The opening degree calculating unit 55 calculates the opening degree of the pressure regulating valve 42 based on the source set value and the transfer function received by the communication unit 51. The source set point can be a set point for a parameter of the source radio frequency signal. When the communication section 51 receives a source setting value as a setting value of a parameter of the source radio frequency signal and a transfer function having the source setting value as an input, the opening degree calculation section 55 may calculate the opening degree of the pressure regulating valve 42 based on the source setting value and the transfer function.

The recipe data may include a set value (source set value) of a parameter of the source rf signal in the etching process in step ST 3. As an example, the parameters of the source rf signal may include the power, voltage, frequency, duty cycle, and supply time of the source rf signal. In addition, the recipe data can contain settings for parameters of the bias signal (bias rf signal and bias dc signal). As an example, the parameters of the bias signal may include power, voltage, frequency, duty cycle, and supply time of the bias signal. In addition, the recipe data can include a set point of a second direct current signal applied to the upper electrode. As an example, the parameters of the second dc signal may include the voltage of the second dc signal and the application time of the second dc signal. In addition, the recipe data can include parameters of the process gas in the etching process. As an example, the parameters of the process gas may include a flow rate of the process gas, a gas type included in the process gas, a dissociation degree of the gas included in the process gas, a type and an amount of by-products generated from the gas included in the process gas, a supply time of the process gas, and the like.

The transfer function is a function in which a set value of one or more parameters included in the recipe data is input, and a set value related to the adjustment of the pressure in the plasma processing space 10s is output. As an example, the transfer function may be a function in which a set value of a parameter of the source rf signal and/or a set value of a parameter of the process gas is input, and an opening of the pressure control valve 42, a correction value of the opening, or a pressure of the plasma processing space 10s is output. As an example, the transfer function may include information of a time constant. For example, the information of the time constant may be a time until the internal pressure starts to change and a time until the internal pressure reaches a predetermined pressure when the opening of the pressure control valve 42 is set to a predetermined opening in order to set the internal pressure of the plasma processing chamber 10 to the predetermined pressure. The information of the time constant may be a time when the supply of the process gas from the gas supply unit 20 to the plasma processing chamber 10 starts to change and a time when the internal pressure becomes substantially constant. The transfer function may be generated or updated by machine learning.

In this example, the pressure valve control device 50 may be configured to backup or temporarily store control data received by the communication unit 51. As an example, the recipe data read from the control unit 2a2 and the transfer function can be backed up or temporarily stored in the pressure valve control device 50. The recipe data and the transfer function may be backed up or temporarily stored in the pressure valve control device 50 for the FF control portion 54 to calculate the FF correction value.

In this example, the control unit 2 can control the plasma processing apparatus 1 in the same manner as in the example shown in fig. 3. In this example, the respective configurations of the pressure control system 100 can perform the same operations as the example shown in fig. 3. The storage unit 2a2 can store the same data as the storage unit 2a2 and the storage unit 56 in the example shown in fig. 3. In the pressure valve control device 50, the opening degree calculating unit 55 can calculate the opening degree of the pressure regulating valve 42 in the same manner as in the example shown in fig. 3.

Fig. 7 is a block diagram showing another example of the configuration of the pressure control system 100. The pressure adjustment system 100 in this example is different from the pressure adjustment system 100 in at least fig. 3 in that it has a function of calculating the opening degree of the pressure adjustment valve 42 by the control section 2. That is, the control unit 2 in this example includes the differential calculating unit 52 and the opening calculating unit 55 in the processing unit 2a 1. On the other hand, the pressure control device 50 in this example includes a communication unit 51 and an opening degree control unit 57.

In this example, the control unit 2 can control the plasma processing apparatus 1 in the same manner as in the example shown in fig. 3. In this example, the respective configurations of the pressure control system 100 can perform the same operations as the example shown in fig. 3. The storage unit 2a2 can store the same data as the storage unit 2a2 and the storage unit 56 in the example shown in fig. 3. In the control unit 2, the opening degree calculating unit 55 can calculate the opening degree of the pressure regulating valve 42 in the same manner as in the example shown in fig. 3. That is, in this example, the opening degree calculating unit 55 can read the recipe data and the transfer function from the storage unit 2a2, and calculate the opening degree of the pressure regulating valve 42 based on the read recipe data and transfer function. In the pressure control device 50, the communication unit 51 receives the opening degree of the pressure regulating valve 42 from the control unit 2 via the communication interface 2a 3. The opening degree control unit 57 controls the opening degree of the pressure regulating valve 42 based on the received opening degree.

The opening degree received by the communication unit 51 can be calculated by the opening degree calculating unit 55 based on the source setting value. The source set point can be a set point for a parameter of the source radio frequency signal. The source rf signal can be a signal used to generate a plasma within the plasma processing chamber 10. The opening degree calculating unit 55 may read out the source setting value, which is the setting value of the parameter of the source rf signal, from the storage unit 2a 2. The opening degree calculating unit 55 may read out a transfer function having the source setting value as an input from the storage unit 2a2 based on the source setting value read out from the storage unit 2a 2. The opening degree calculating unit 55 can calculate the opening degree of the pressure regulating valve 42 based on the source set value read from the storage unit 2a2 and the transfer function. The transfer function can be a function representing the relationship of the source set point to the chamber pressure.

The recipe data may include a set value (source set value) of a parameter of the source rf signal in the etching process in step ST 3. As an example, the parameters of the source rf signal may include the power, voltage, frequency, duty cycle, and supply time of the source rf signal. In addition, the recipe data can contain settings for parameters of the bias signal (bias rf signal and bias dc signal). As an example, the parameters of the bias signal may include power, voltage, frequency, duty cycle, and supply time of the bias signal. In addition, the recipe data can include a set point of a second direct current signal applied to the upper electrode. As an example, the parameters of the second dc signal may include the voltage of the second dc signal and the application time of the second dc signal. In addition, the recipe data can include parameters of the process gas in the etching process. As an example, the parameters of the process gas may include the flow rate of the process gas, the gas type included in the process gas, the dissociation degree of the gas included in the process gas, the type and amount of by-products generated from the gas included in the process gas, the process gas supply time, and the like.

The transfer function is a function in which a set value of one or more parameters included in the recipe data is input, and a set value related to the adjustment of the pressure in the plasma processing space 10s is output. As an example, the transfer function is a function that can take as input a set value of a parameter of the source rf signal and/or a set value of a parameter of the process gas, and take as output an opening of the pressure regulating valve 42, a correction value of the opening, or a pressure of the plasma processing space 10 s. As an example, the transfer function may include information of a time constant. For example, the information of the time constant may be a time until the internal pressure starts to change and a time until the internal pressure reaches a predetermined pressure when the opening of the pressure control valve 42 is set to a predetermined opening in order to set the internal pressure of the plasma processing chamber 10 to the predetermined pressure. The time constant information may be a time when the internal pressure of the plasma processing chamber 10 starts to change from the start of the supply of the process gas to the gas supply unit 20, and a time when the internal pressure is substantially constant. The transfer function may be generated or updated by machine learning.

The communication unit 51 can receive opening degree data on the opening degree of the pressure regulating valve 42 from the pressure regulating valve 42. The communication unit 51 can transmit the opening degree data to the control unit 2. The control unit 2 can store the opening degree data received from the communication unit 51 in the storage unit 2a 2. The control unit 2 may not receive opening degree data from the pressure control valve 42 via the pressure valve control device 50. The communication unit 51 may store the opening degree data received from the pressure control valve 42 in the storage unit 56. The opening degree data can be an encoder value for controlling the opening degree of the pressure control valve 42. The control unit 2 can control the operation timing and/or the operation speed of the pressure control valve 42 based on the opening degree data.

The presently disclosed embodiments are considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, and altered in various ways without departing from the scope of the appended claims and the gist thereof. Further, exemplary embodiments of the present disclosure can include the following.

(additionally, 1)

A plasma processing apparatus includes:

a chamber;

a gas supply unit configured to supply a process gas into the chamber;

a power supply that generates a source radio frequency signal within the chamber that generates a plasma from the process gas;

A storage unit that stores a source setting value as a setting value of a parameter of the source radio frequency signal in advance;

a pressure regulating valve connected to the chamber and configured to regulate an internal pressure of the chamber;

an opening degree calculation unit that calculates an opening degree of the pressure regulating valve, the opening degree being calculated based on the source setting value; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

(additionally remembered 2)

The plasma processing apparatus according to supplementary note 1, wherein the source set value is at least one of a power, a voltage, a frequency, and a duty ratio of the source rf signal.

(additionally, the recording 3)

The plasma processing apparatus according to any one of supplementary notes 1 and 2, further comprising:

a substrate supporting portion for supporting a substrate in the chamber,

the power supply also generates a bias signal to be supplied to the substrate support section,

the storage unit stores a bias set value as a set value of a parameter of the bias signal,

the opening degree calculating unit further calculates an opening degree of the pressure regulating valve based on the bias set value stored in the storage unit.

(additionally remembered 4)

The plasma processing apparatus according to the additional note 3, wherein,

the bias signal is a bias radio frequency signal,

The bias set point is the power, voltage, frequency or duty cycle of the bias radio frequency signal.

(additionally noted 5)

The plasma processing apparatus according to the additional note 3, wherein,

the bias signal is a bias dc signal comprising a plurality of voltage pulses,

the bias set point is the voltage, frequency or duty cycle of the voltage pulse.

(additionally described 6)

The plasma processing apparatus according to any one of supplementary notes 1 to 5, wherein,

the storage unit further stores a flow rate set point which is a set point of the flow rate of the process gas,

the opening degree calculating unit calculates an opening degree of the pressure regulating valve based on the flow rate set value stored in the storage unit.

(additionally noted 7)

The plasma processing apparatus according to any one of supplementary notes 1 to 6, further comprising:

a pressure sensor for measuring the internal pressure of the chamber,

the opening degree calculating unit switches from (a) an operation of calculating the opening degree of the pressure regulating valve based on the source set value stored in the storage unit to (b) an operation of calculating the opening degree of the pressure regulating valve based on the internal pressure of the chamber measured by the pressure sensor, based on the amount of change in the internal pressure of the chamber.

(additionally noted 8)

The plasma processing apparatus according to any one of supplementary notes 1 to 7, wherein,

the storage unit stores a gas type contained in the process gas,

the opening degree control unit calculates the opening degree of the pressure regulating valve based on whether or not the gas type switching stored in the storage unit is based on the source set value stored in the storage unit.

(additionally, the mark 9)

The plasma processing apparatus according to any one of supplementary notes 1 to 8, wherein,

the storage unit stores a film type contained in a substrate accommodated in the chamber,

the opening degree control unit calculates the opening degree of the pressure regulating valve based on whether or not the film type switching stored in the storage unit is based on the source set value stored in the storage unit.

(additionally noted 10)

The plasma processing apparatus according to any one of supplementary notes 1 to 9, wherein,

the substrate accommodated in the chamber includes a mask including an opening pattern,

the storage portion stores an aperture ratio of an aperture included in the aperture pattern,

the opening degree control unit calculates the opening degree of the pressure regulating valve based on whether or not the opening ratio switching stored in the storage unit is based on the source set value stored in the storage unit.

(additionally noted 11)

The plasma processing apparatus according to any one of supplementary notes 1 to 10, wherein,

the memory portion further stores a transfer function representing a relationship of the source set value and the internal pressure of the chamber,

the opening degree calculating section also calculates an opening degree of the pressure regulating valve based on the transfer function.

(additional recording 12)

The plasma processing apparatus according to the additional note 11, further comprising:

a pressure sensor for measuring the internal pressure of the chamber,

the opening degree calculating section obtains an internal pressure of the chamber and an opening degree of the pressure regulating valve in execution of the plasma process,

the opening degree calculating unit updates the transfer function stored in the storage unit based on a correlation between the source setting value and the acquired internal pressure of the chamber and the opening degree of the pressure regulating valve.

(additional recording 13)

The plasma processing apparatus according to any one of supplementary notes 1 to 12, further comprising:

a substrate support portion for supporting a substrate in the chamber; and

an upper electrode facing the substrate support portion,

the power supply also generates a direct current signal applied to the upper electrode,

the storage unit stores a DC set value as a set value of a parameter of the DC signal,

The opening degree calculating unit calculates the opening degree of the pressure regulating valve based on the dc set value stored in the storage unit.

(additional recording 14)

A plasma processing method performed in a plasma processing apparatus having a chamber, comprising:

a step of supplying a process gas into the chamber;

generating a source rf signal for generating a plasma from the process gas in the chamber;

a step of storing a source setting value as a setting value of a parameter of the source radio frequency signal in advance; and

and calculating an opening degree of a pressure regulating valve configured to regulate the internal pressure of the chamber, the opening degree being calculated based on the source set value.

(additional recording 15)

A pressure valve control device for controlling the opening of a pressure regulating valve connected to a chamber, comprising:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

an opening degree calculating unit that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication unit; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

(additionally remembered 16)

The pressure valve control device according to supplementary note 15, further comprising:

a storage unit for storing a transfer function having the source setting value received by the communication unit as an input,

the opening degree calculating unit reads the transfer function stored in the storage unit, and calculates the opening degree of the pressure regulating valve based on the source set value received by the communication unit and the transfer function read from the storage unit.

(additionally noted 17)

The pressure valve control device according to the supplementary note 16, wherein,

when the communication section receives a source setting value, the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function.

(additional notes 18)

The pressure valve control device according to the additional note 15, wherein,

the communication section receives a transfer function having the source setting value as an input,

the opening degree calculating unit calculates an opening degree of the pressure regulating valve based on the source set value and the transfer function received by the communication unit.

(additionally, a mark 19)

The pressure valve control device according to supplementary note 18, wherein,

when the communication section receives the source setting value and the transfer function, the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function.

(additionally noted 20)

A pressure valve control device for controlling the opening of a pressure regulating valve connected to a chamber, comprising:

a communication unit configured to receive an opening degree of the pressure control valve, the opening degree being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the received opening degree.

(additionally, the recording 21)

The pressure valve control device according to the supplementary note 20, wherein,

the opening degree of the pressure regulating valve is calculated based on the source set point and a transfer function representing a relationship of the source set point and an internal pressure of the chamber.

(with 22)

A pressure valve control method of controlling an opening degree of a pressure regulating valve connected to a chamber, comprising:

a step of receiving a source set value, which is a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

a step of calculating the opening degree of the pressure regulating valve based on the received source set value; and

and controlling the opening of the pressure regulating valve based on the calculated opening.

(additionally note 23)

A pressure valve control method of controlling an opening degree of a pressure regulating valve connected to a chamber, comprising:

receiving an opening degree of the pressure control valve, wherein the opening degree is calculated based on a source set value, the source set value is a set value of a parameter of a source radio frequency signal, and the source radio frequency signal is a signal for generating plasma in the chamber; and

and controlling the opening of the pressure regulating valve based on the received opening.

(additionally noted 24)

A pressure regulating system is provided with:

the pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device controls the opening of a pressure regulating valve connected to a chamber, and comprises:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

an opening degree calculating unit that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication unit; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

(additionally noted 25)

A pressure regulating system is provided with:

The pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device is provided with:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

a storage unit configured to store a transfer function in which the source setting value received by the communication unit is set as an input;

an opening degree calculating unit that reads the transfer function stored in the storage unit, and calculates an opening degree of the pressure regulating valve based on the source setting value received by the communication unit and the transfer function read from the storage unit; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

(additionally noted 26)

A pressure regulating system is provided with:

the pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device is provided with:

a communication unit configured to receive an opening degree of the pressure control valve, the opening degree being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and

And an opening degree control unit that controls the opening degree of the pressure regulating valve based on the received opening degree.

Claims (26)

1. A plasma processing apparatus includes:

a chamber;

a gas supply unit configured to supply a process gas into the chamber;

a power supply that generates a source radio frequency signal within the chamber that generates a plasma from the process gas;

a storage unit that stores a source setting value as a setting value of a parameter of the source radio frequency signal in advance;

a pressure regulating valve connected to the chamber and configured to regulate an internal pressure of the chamber;

an opening degree calculation unit that calculates an opening degree of the pressure regulating valve, the opening degree being calculated based on the source setting value; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

2. The plasma processing apparatus according to claim 1, wherein,

the source set point is at least one of a power, a voltage, a frequency, and a duty cycle of the source radio frequency signal.

3. The plasma processing apparatus according to claim 1, further comprising:

a substrate supporting portion for supporting a substrate in the chamber,

the power supply also generates a bias signal to be supplied to the substrate support section,

The storage unit stores a bias set value as a set value of a parameter of the bias signal,

the opening degree calculating unit further calculates an opening degree of the pressure regulating valve based on the bias set value stored in the storage unit.

4. The plasma processing apparatus according to claim 3, wherein,

the bias signal is a bias radio frequency signal,

the bias set point is the power, voltage, frequency or duty cycle of the bias radio frequency signal.

5. The plasma processing apparatus according to claim 3, wherein,

the bias signal is a bias dc signal comprising a plurality of voltage pulses,

the bias set point is the voltage, frequency or duty cycle of the voltage pulse.

6. The plasma processing apparatus according to claim 1, wherein,

the storage unit further stores a flow rate set point which is a set point of the flow rate of the process gas,

the opening degree calculating unit calculates an opening degree of the pressure regulating valve based on the flow rate set value stored in the storage unit.

7. The plasma processing apparatus according to claim 1, further comprising:

a pressure sensor for measuring the internal pressure of the chamber,

The opening degree calculating unit switches from (a) an operation of calculating the opening degree of the pressure regulating valve based on the source set value stored in the storage unit to (b) an operation of calculating the opening degree of the pressure regulating valve based on the internal pressure of the chamber measured by the pressure sensor, based on the amount of change in the internal pressure of the chamber.

8. The plasma processing apparatus according to claim 1, wherein,

the storage unit stores a gas type contained in the process gas,

the opening degree control unit calculates the opening degree of the pressure regulating valve based on whether or not the gas type switching stored in the storage unit is based on the source set value stored in the storage unit.

9. The plasma processing apparatus according to claim 1, wherein,

the storage unit stores a film type contained in a substrate accommodated in the chamber,

the opening degree control unit calculates the opening degree of the pressure regulating valve based on whether or not the film type switching stored in the storage unit is based on the source set value stored in the storage unit.

10. The plasma processing apparatus according to claim 1, wherein,

the substrate accommodated in the chamber includes a mask including an opening pattern,

The storage portion stores an aperture ratio of an aperture included in the aperture pattern,

the opening degree control unit calculates an opening degree of the pressure regulating valve based on whether or not the opening ratio switching stored in the storage unit is based on the source set value stored in the storage unit.

11. The plasma processing apparatus according to claim 1, wherein,

the memory portion further stores a transfer function representing a relationship of the source set value and the internal pressure of the chamber,

the opening degree calculating section also calculates an opening degree of the pressure regulating valve based on the transfer function.

12. The plasma processing apparatus according to claim 11, further comprising:

a pressure sensor for measuring the internal pressure of the chamber,

the opening degree calculating section obtains an internal pressure of the chamber and an opening degree of the pressure regulating valve in execution of the plasma process,

the opening degree calculating unit updates the transfer function stored in the storage unit based on a correlation between the source setting value and the acquired internal pressure of the chamber and the opening degree of the pressure regulating valve.

13. The plasma processing apparatus according to claim 1, further comprising:

A substrate support portion for supporting a substrate in the chamber; and

an upper electrode facing the substrate support portion,

the power supply also generates a direct current signal applied to the upper electrode,

the storage unit stores a DC set value as a set value of a parameter of the DC signal,

the opening degree calculating unit calculates the opening degree of the pressure regulating valve based on the dc set value stored in the storage unit.

14. A plasma processing method performed in a plasma processing apparatus having a chamber, comprising:

a step of supplying a process gas into the chamber;

generating a source rf signal for generating a plasma from the process gas in the chamber;

a step of storing a source setting value as a setting value of a parameter of the source radio frequency signal in advance; and

and calculating an opening degree of a pressure regulating valve configured to regulate the internal pressure of the chamber, the opening degree being calculated based on the source set value.

15. A pressure valve control device for controlling the opening of a pressure regulating valve connected to a chamber, comprising:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

An opening degree calculating unit that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication unit; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

16. The pressure valve control device according to claim 15, further comprising:

a storage unit for storing a transfer function having the source setting value received by the communication unit as an input,

the opening degree calculating unit reads the transfer function stored in the storage unit, and calculates the opening degree of the pressure regulating valve based on the source set value received by the communication unit and the transfer function read from the storage unit.

17. The pressure valve control device according to claim 16, wherein,

when the communication section receives a source setting value, the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function.

18. The pressure valve control device according to claim 15, wherein,

the communication section receives a transfer function having the source setting value as an input,

the opening degree calculating unit calculates an opening degree of the pressure regulating valve based on the source set value and the transfer function received by the communication unit.

19. The pressure valve control device according to claim 18, wherein,

when the communication section receives the source setting value and the transfer function, the opening degree calculation section calculates the opening degree of the pressure regulating valve based on the source setting value and the transfer function.

20. A pressure valve control device for controlling the opening of a pressure regulating valve connected to a chamber, comprising:

a communication unit configured to receive an opening degree of the pressure control valve, the opening degree being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the received opening degree.

21. The pressure valve control device according to claim 20, wherein,

the opening degree of the pressure regulating valve is calculated based on the source set point and a transfer function representing a relationship of the source set point and an internal pressure of the chamber.

22. A pressure valve control method of controlling an opening degree of a pressure regulating valve connected to a chamber, comprising:

a step of receiving a source set value, which is a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

A step of calculating the opening degree of the pressure regulating valve based on the received source set value; and

and controlling the opening of the pressure regulating valve based on the calculated opening.

23. A pressure valve control method of controlling an opening degree of a pressure regulating valve connected to a chamber, comprising:

receiving an opening degree of the pressure control valve, wherein the opening degree is calculated based on a source set value, the source set value is a set value of a parameter of a source radio frequency signal, and the source radio frequency signal is a signal for generating plasma in the chamber; and

and controlling the opening of the pressure regulating valve based on the received opening.

24. A pressure regulating system is provided with:

the pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device controls the opening of a pressure regulating valve connected to a chamber, and comprises:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

an opening degree calculating unit that calculates an opening degree of the pressure regulating valve based on the source set value received by the communication unit; and

And an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

25. A pressure regulating system is provided with:

the pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device is provided with:

a communication unit configured to receive a source set value as a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber;

a storage unit configured to store a transfer function having the source setting value received by the communication unit as an input;

an opening degree calculating unit that reads the transfer function stored in the storage unit, and calculates an opening degree of the pressure regulating valve based on the source setting value received by the communication unit and the transfer function read from the storage unit; and

and an opening degree control unit that controls the opening degree of the pressure regulating valve based on the calculated opening degree.

26. A pressure regulating system is provided with:

the pressure regulating valve is connected with the chamber; and

a pressure valve control device for controlling the opening degree of the pressure regulating valve,

the pressure valve control device is provided with:

a communication unit configured to receive an opening degree of the pressure control valve, the opening degree being calculated based on a source set value, the source set value being a set value of a parameter of a source radio frequency signal, the source radio frequency signal being a signal for generating plasma in the chamber; and

And an opening degree control unit that controls the opening degree of the pressure regulating valve based on the received opening degree.