CN1171364C - 选择实现增益裕度需要的激光器的方法 - Google Patents

选择实现增益裕度需要的激光器的方法 Download PDF

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CN1171364C
CN1171364C CNB008100748A CN00810074A CN1171364C CN 1171364 C CN1171364 C CN 1171364C CN B008100748 A CNB008100748 A CN B008100748A CN 00810074 A CN00810074 A CN 00810074A CN 1171364 C CN1171364 C CN 1171364C
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P·O·格拉尼斯特兰德
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Northern Light Photoelectric Co
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
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    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

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Abstract

本发明涉及一种具有采用阈值电流标准的有效排除选择的高产出率DFB激光器。对高输出功率的需求经常将要求采用具有大部分光功率来自于前镜的不对称性功率分布的激光器。按照本发明的激光器优选地具有作为剪切的(as-cleaved)后反射镜、经AR涂层的前反射镜和被放置在从后反射镜起计算在激光器腔长的43%处的90度的相移(四分之一波长)。这种类型的激光器提供良好的SM产出率、有利的功率不对称性以及利用阈值电流作为选择参数来选择良好激光器的可能性。

Description

选择实现增益裕度需要的激光器的方法
本发明的技术领域
本发明涉及一种利用采用阈值电流标准的有效排除选择的高产出率(yield)分布式反馈(DFB)激光器。
本发明的背景
在纤维光学的许多应用中，人们需要良好的光源。所希望的特性是高的输出功率、良好的光谱特性(窄的带宽)、高的功率效率、合理的激励条件、高产出率和简单的测试等。一种在很大程度上实现这些要求的通常被采用的激光器类型是分布式反馈激光器。传统地，人们采用在两个反射镜上具有AR涂层(减反射的涂层)的1/4波长位移的分布式反馈激光器。作为对AR涂层的补充或替代，有时采用所谓窗结构。窗结构是减小例如激光器反射率的一种装置。通过将激光器波导终结于距基片(chip)小端面一段距离(例如15微米)，窗结构便可以简单地实现。于是光将在波导终结处和基片小端面之间的体材料中自由地传播。光束将在此发散而且在基片小端面被反射的反射光束将继续发散。因此同波导在基片小端面终结的情况相比，被耦合回到激光器波导的反射将基本上被抑制。1/4波长位移分布式反馈激光器装备有在激光器腔长中点处的一个90度的相移。这种激光器类型原则上将提供100％的单模(SM)产出率。SM产出率表示所制造的实现某光谱纯度要求的激光器的百分率。通常这一要求在增益裕度(gainmargin)特性中被表示出来，增益裕度是在发射激光的模和下一个模(在其它的模当中与发射激光的模最为靠近的)之间在净增益上的距离。但是，这种激光器类型将在正向获取一半的功率而在反向获取另一半功率，即它将无法提供任何功率的不对称性。这意味着这些激光器经常提供很少的有用输出功率。而且这种激光器类型还给出相对高的阈值电流。为了改善这些缺点人们经常使后反射镜不涂层，使其具有典型地处在30％数量级的自然反射率。这将使激光器在正向上比反向上具有更高的功率。此外，这还将带来与传统的1/4波长位移的分布式反馈激光器相比更低的阈值电流。然而，当后反射镜不被涂覆时，激光器的SM产出率将下降。这意味着人们必须在所制造的激光器全体中选择出好的激光器。
如上所述，阈值电流和功率不对称性性能对1/4波长位移的激光器的许多应用来说不是足够好。对于具有如上所述的剪切状态下(as-cleaved)的后反射镜的1/4波长位移的激光器，增益裕度特性不如所希望的那么好，而且通过测量光学光谱来选择激光器的需要使测试变得比所希望的更加复杂。而且，具有足够好的增益裕度的激光器将具有在它们当中在功率不对称性方面的所不希望的扩展。
发明概述
如上所指出，对高输出功率的需求经常将要求采用具有大部分光功率来自于前放射镜的不对称性功率分布的激光器。实现它的一个好的办法是采用具有相对高的后反射镜的反射率的激光器，这种高的反射率通常通过留下后放射镜使其作为被剪切的(as-cleaved)，即不带AR涂层来获得。但是，通过采用这种类型的激光器，人们不能接受所有制造出的激光器。由于在反射镜处变化的相移，一些激光器工作时将不具备足够好的光谱特性，而必须将其挑选出。这种挑选传统上通过测量激光器的光学光谱来执行。这是一个相当复杂的测量。而且，当采用传统的激光器时，一些必须被扔掉的样品具有全体中最低的阈值电流和最佳的功率均匀性之一，这是不希望的一种情形。
这样应用的激光器，其典型地具有作为剪切的(as-cleaved)后反射镜、AR涂覆的前反射镜以及被放置在从后反射镜起算的激光器腔长43％处的90度相移(1/4波长)，提供良好的SM产出率、有利的功率不对称性以及利用阈值电流作为选择参数来选择好的激光器的可能性。
附图的简要说明
图1作为本发明的示意性实例来显示本发明的想法。
图2是具有10至170度相移的激光器的SM产出率曲线。
图3是具有将阈值电流作为选择参数的激光器的产出率曲线，其中考虑为相移在10至170度且相移位置在10至90％。
图4示出了具有90度相移激光器的SM产出率和功率不对称性。
优选实施方案的详细说明
参见图1的示意性实例，该想法可以被如此说明：该激光器具有一个具有相对高的反射率的后反射镜，特别是与具有大于10％反射率的剪切的小端面和HR-涂敷或轻轻地AR涂覆的小端面比较。前反射镜是经AR涂覆的而且可或可不与窗结构或其它反射减小装置相结合，提供小于2％的反射率，典型地小于1％的有效反射率。该激光器装备有处于从后反射镜起算在激光器的20％至50％的位置上的相移。此相移具有40至150度的大小。通过采用这样的激光器，将获得具有好的功率不对称性和高的单模产出率既实现增益裕度(gain marginal)要求的激光器的百分率的激光器，其中将获得仅仅通过检查阈值电流便高度精确地从全体中选择好的激光器的可能性。
为了更好地理解这一想法，可以考虑显示普通相移激光器的单模产出率的一示意图。激光器被优选地配有作为剪切的(as-cleaved)后反射镜、具有0.1％反射率的前反射镜、neff＝3.21、30/cm的耦合系数及10/cm的临界增益要求。对从10至170度的许多不同的相移值，单模产出率即实现增益裕度要求的激光器的百分率，被显示在附图中。该图实际上包括17个图的层叠，所有的图具有范围从0至100％的y轴。X轴表示沿着激光器从后反射镜起以百分率计算的相移的位置。
进一步考虑采用阈值电流作为选择参数的产出率的对应的图。计算按如下执行：首先模拟大量具有不同反射镜相移的激光器，然后计算这些激光器的增益裕度。还要计算这些激光器的阈值电流，然后根据所计算的数据检查哪些激光器由于差的增益裕度将要被丢弃。随后在这些激光器当中找出最低的阈值电流。然后假定在所有的激光器当中具有在该值之上的阈值电流的样品将被丢弃。通过采用阈值电流作为选择参数，这直接给出了产出率为100％减去所丢弃激光器的百分率。
在图2和图3这些图中可以看出，不但当考虑一般性的SM产出率时，而且当考虑采用根据阈值电流进行选择的产出率时，所建议的具有在激光器腔长约40％处相移为约90度的激光器具有最佳的性能。
此外，极重要的是拥有一种激光器，其在正向提供尽可能大的有用功率。在这个方面上本发明的激光器比传统的激光器要好。为了进一步解释这一点，在图4中显示出平均功率不对称性和单模(SM)产出率图，其中平均功率不对称性和单模(SM)产出率作为具有相移大小为90度的激光器的相移位置的函数。从图4可以看出，如果人们需要将高的SM产出率与良好的功率不对称性结合，40至46％的相移区域是特别重要的。
本发明的一个重要应用是在集成的分布式反馈调制器电路中作为光源。调制器可以例如是电致吸收或马赫-曾德干涉仪类型。
本发明可能的变化可包括被放置在结构中任何地方在180度左右的附加相移，虽然它可能具有一些校正效果，但是这不会改变激光器的基本表现。另一变化可能是对后反射镜上利用高反射(HR)涂层的情况规定具体的定义，这可能对增加来自基片的光功率是重要的并可能具有更靠近后反射镜的一个最佳相移。
激光器工艺的产出率对降低成本及能够实施良好的生产计划具有重要意义。而且，如果更为简单的选择程序可以被采用，则成本将会更进一步降低。本想法便针对这两个问题而言。另一个优点是所建议的激光器在认可的激光器中在功率不对称性上具有减小的变化，这为激光器带来更加均质的性能。
虽然上述说明包括许多细节及特殊性，但是应理解为这些仅仅是对本发明具有说明性，并不能解释为具有限定性。许多更改对于本领域的普通工作者将是显而易见的，这些更改并不违背如所附的权利要求及其具有法律效力的等价物所规定的本发明的实质和范围。

Claims (1)

1.一种从分布式反馈激光器全体中选择实现增益裕度要求的激光器的方法，每个激光器具有反射率小于2％的前反射镜、具有反射率大于10％的后反射镜以及被放置在从后反射镜起计算在激光器腔长的5至50％处的40至150度的相移，其特征在于采用激光器阈值电流作为选择参数。
CNB008100748A 1999-07-08 2000-06-16 选择实现增益裕度需要的激光器的方法 Expired - Fee Related CN1171364C (zh)

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SE516784C2 (sv) 2002-03-05
SE9902628D0 (sv) 1999-07-08
HK1048201A1 (en) 2003-03-21
CA2378386A1 (en) 2001-01-18
KR20020035640A (ko) 2002-05-13
SE9902628L (sv) 2001-01-09

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