CN117134193A - Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser - Google Patents
Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser Download PDFInfo
- Publication number
- CN117134193A CN117134193A CN202311305968.0A CN202311305968A CN117134193A CN 117134193 A CN117134193 A CN 117134193A CN 202311305968 A CN202311305968 A CN 202311305968A CN 117134193 A CN117134193 A CN 117134193A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- thickness
- photonic crystal
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 27
- 238000005086 pumping Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 7
- 238000004528 spin coating Methods 0.000 abstract description 5
- 238000002207 thermal evaporation Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 266
- 239000000463 material Substances 0.000 description 23
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the technical field of lasers, in particular to a silicon-based electric pumping perovskite photonic crystal surface emitting laser. The active region of the laser comprises an n-type superlattice layer, a two-dimensional perovskite light-emitting layer and a p-type superlattice layer which are sequentially arranged. The laser has the structure of Si substrate, silicon oxide layer, n-type electrode, n-type gallium arsenide layer, n-type graded index layer, n-type aluminum gallium arsenide layer, n-type superlattice layer, two-dimensional perovskite light emitting layer, p-type superlattice layer, silicon nitride layer, p-type aluminum gallium arsenide layer, p-type graded index layer, p-type gallium arsenide layer, ITO layer and p-type electrode from bottom to top. The invention directly prepares the surface emitting laser with high stability on the silicon substrate, avoids the complex processes of direct epitaxial growth, wafer bonding and the like in the traditional silicon substrate heterogeneous integration, can be prepared by adopting a spin coating method and a thermal evaporation method, has simple process, and provides a feasible scheme for the applications of silicon substrate polishing interconnection, monolithic integrated photoelectric chips and the like.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a silicon-based electric pumping perovskite photonic crystal surface emitting laser.
Background
Light source lasers as communication systems attract the eyes of many researchers, and the development of wavelength-tunable laser materials and low-cost lasers are the continuous research targets of researchers in the laser technology field. Silicon-based photonic devices are compatible with Complementary Metal Oxide Semiconductor (CMOS) processes to achieve high integration. In recent years, high-efficiency reliable on-chip integrated light source research has mainly focused on erbium-doped silicon light sources, silicon germanium IV light sources and silicon-based III-V light sources. The former two still suffer from the bottleneck of high threshold current and lower luminous efficiency, and the latter III-V light source meets the application requirements of low power consumption, high performance and the like, but the large lattice adaptation of the latter light source and the silicon material causes the latter light source to need complex epitaxial growth or high-cost process.
The perovskite material has excellent photoelectric characteristics as an emerging photoelectric material, and the perovskite material has the characteristics of full coverage of wavelength in a visible light range, high fluorescence quantum yield, low defect state density, high gain coefficient and the like. Meanwhile, the perovskite material is manufactured by a solution method, so that the cost is low, and the preparation process is simple. In recent years, semiconductor materials prepared by a solution method have been developed, continuous optical pumping laser light has been realized in perovskite prepared by the solution method, and even though the perovskite laser light is realized by an electric pumping method, the perovskite laser light has the problems of complex structure, complex manufacturing process and the like. Perovskite materials have the problem of larger Auger complex constants, and are 2-3 orders of magnitude of GaAs materials; perovskite materials also have poor thermal conductivities, 2-3 orders of magnitude lower than silicon and GaAs. Thus, auger recombination at higher injection currents can lead to severe joule heating, ultimately leading to sharp problems such as device aging failure.
Chinese patent CN112510162a provides a method for preparing a silicon-based light emitting diode, which belongs to the technical field of photoelectric materials and devices, and the silicon-based light emitting diode comprises a silicon oxide wafer substrate, an Au thin film anode, and a PEDOT: PSS hole transport layer, PVP lower interface modification layer, quasi two-dimensional perovskite BA 2 Cs n-1 PbBr 3n+1 A luminescent layer, an interface passivation layer on PS, a Bphen electron transport layer and a semitransparent Ag film cathode. The invention adopts the ultrathin high polymer layer with insulating property to effectively reduce the exciton luminescence quenching of the quasi-two-dimensional perovskite layer; the high-reflectivity Au bottom electrode and the semitransparent Ag top electrode are utilized to form a microcavity structure to enhance the light output coupling of the upper surface, and the perovskite light-emitting diode with high stability is directly prepared on the silicon substrate by a low-cost solution method, so that complex processes such as direct epitaxial growth, wafer bonding and the like in the traditional silicon substrate heterogeneous integration are avoided, and a feasibility scheme is provided for the application of silicon substrate polishing interconnection, monolithic integrated photoelectric chips and the like. However, the manufacturing process of the invention is complicated, the manufacturing period is long, and a long section of way is needed for realizing marketization.
Chinese patent CN111162446a discloses an electrically pumped perovskite laser, which has a bottom-to-top structure comprising, in order, a substrate, a P electrode, a partial mirror layer, a hole transport layer, a perovskite active light emitting region, an electron transport layer, a total mirror layer, and an N electrode, wherein the P electrode is fabricated on the substrate, the N electrode is fabricated on the total mirror layer, and air channels are left between the N electrodes; the P electrode and the N electrode are respectively externally connected with the positive electrode and the negative electrode of a power supply, and the electric pumping perovskite laser disclosed by the invention improves the carrier mobility in a chip taking perovskite as an active area and improves the performance of a device; the resonant cavity adopts an FP cavity mirror mode, so that the large-area contact between the reflecting mirror layer and the transmission layer is realized, and working substances can be fully utilized, so that light beams oscillate in the whole working substances; the preparation method is simple and can be prepared by adopting a spin coating method and a thermal evaporation method. However, the invention mainly utilizes the self advantages of perovskite materials, and the substrate is glass which is not suitable for high-integration silicon-based.
Chinese patent CN108063365a provides a method for preparing an electrically pumped perovskite quantum dot laser, comprising the steps of: step 1: etching the first photonic crystal structure on a substrate to provide a resonant cavity and a surface emission mechanism for the laser; step 2: sequentially preparing an electron transport layer, a perovskite quantum dot layer, a hole transport layer and a positive electrode on a negative electrode to form a first substrate; step 3: and bonding the substrate etched with the first photonic crystal structure with the first substrate to complete the preparation. The invention can obtain the electric pump perovskite quantum dot laser structure with simple structure, and can effectively improve the external quantum efficiency of perovskite quantum dots under the electric pump. However, the photonic crystal structure designed in the invention is used as a resonant cavity and a surface emitting mechanism of the laser, which can cause higher film scattering and incomplete alignment of the cavity, thereby causing higher optical loss and higher excitation threshold.
Disclosure of Invention
Based on the above, the invention provides a silicon-based electrically pumped perovskite photonic crystal surface-emitting laser which can be used for a photonic crystal surface-emitting laser light source integrated by CMOS, adopts electric pumping, has high energy efficiency and simple preparation process, and can effectively solve the problems of harsh material growth conditions, complex manufacturing process, high cost and the like. Compared with optical pumping, the electric pumping mode adopted by the invention can efficiently and stably convert electric energy to transfer energy, and is simple and convenient to maintain.
In order to achieve the above object, the present invention provides the following solutions:
according to one of the technical schemes of the invention, a silicon-based electrically pumped perovskite photonic crystal surface emitting laser is provided, and an active region comprises an n-type superlattice layer, a two-dimensional perovskite light emitting layer and a p-type superlattice layer which are sequentially arranged.
Further, an n-type photonic crystal layer is arranged on the other side of the n-type superlattice layer, and a p-type photonic crystal layer is arranged on the other side of the p-type superlattice layer.
Further, the p-type photonic crystal layer is connected with the active region through a silicon nitride layer.
Further, the n-type photonic crystal layer comprises an n-type gallium arsenide layer, an n-type graded refractive index layer and an n-type aluminum gallium arsenide layer which are sequentially arranged; the thickness of the n-type photonic crystal layer is 1120-1270nm;
the p-type photonic crystal layer comprises a p-type aluminum gallium arsenide layer, a p-type graded refractive index layer and a p-type gallium arsenide layer which are sequentially arranged; the thickness of the p-type photonic crystal layer is 300-400nm.
Further, the device also comprises an ITO layer; the ITO layer is connected with the p-type photonic crystal layer.
Further, the structure sequentially comprises a Si substrate, a silicon oxide layer, an n-type electrode, an n-type gallium arsenide layer, an n-type graded refractive index layer, an n-type aluminum gallium arsenide layer, an n-type superlattice layer, a two-dimensional perovskite light-emitting layer, a p-type superlattice layer, a silicon nitride layer, a p-type aluminum gallium arsenide layer, a p-type graded refractive index layer, a p-type gallium arsenide layer, an ITO layer and a p-type electrode from bottom to top; the n-type gallium arsenide layer, the n-type graded refractive index layer and the n-type aluminum gallium arsenide layer form an n-type photonic crystal layer; the P-type AlGaAs layer, the P-type graded index layer and the P-type GaAs layer form a P-type photonic crystal layer.
Further, the thickness of the Si substrate is 0.4-0.6mm;
the thickness of the silicon oxide layer is 200-400nm;
the thickness of the n-type electrode is 50-200nm;
the thickness of the n-type gallium arsenide layer is 90-150nm;
the n-type graded index layer is 80-120nm;
the thickness of the n-type aluminum gallium arsenide layer is 950-1000nm;
the thickness of the n-type superlattice layer is 10-250nm;
the thickness of the two-dimensional perovskite luminescent layer is 500-2000nm;
the thickness of the p-type superlattice layer is 10-250nm;
the thickness of the silicon nitride layer is 250-350nm;
the thickness of the p-type aluminum gallium arsenide layer is 90-150nm;
the thickness of the p-type graded refractive index layer is 80-120nm;
the thickness of the p-type gallium arsenide layer is 90-150nm;
the thickness of the ITO layer is 100-500nm;
the thickness of the p-type electrode is 50-200nm.
Further, through air holes are formed in the n-type photonic crystal layer and the p-type photonic crystal layer; the air holes penetrate through the n-type photonic crystal layer and the p-type photonic crystal layer; the diameter of the air holes is 200-500 nm, and the distribution interval is 200-800nm; preferably, the distribution spacing, i.e. lattice constant, is 260-285nm.
Further, the surface of the ITO layer is provided with a convex structure; the cross section length of the single convex structure is 5-10 mu m, and the distribution interval is 5-10 mu m; the thickness of the convex structure is 30-50nm.
The second technical scheme of the invention is that the silicon-based electrically pumped perovskite photonic crystal surface emitting laser is applied to the field of communication.
The invention discloses the following technical effects:
the active region of the invention adopts a structure of combining a two-dimensional perovskite luminescent layer obtained by a low-cost solution method and Superlattice (SCH) layers on two sides, thereby enhancing the relaxation efficiency of carriers and simplifying the preparation process. The perovskite luminescent material adopted by the invention has the advantages of adjustable band gap, large absorption coefficient, high optical gain, high quantum yield, low defect state density and the like, so that the produced laser has excellent quality and high color purity. The upper side of the active region is treated with silicon nitride (SiN X ) Mode selection of the optical waveguide layer and photonic crystal layer (photonic crystal layer of p-type region: the p-type AlGaAs layer, the p-type graded index layer and the p-type GaAs layer) can improve energy efficiency, realize the purpose of wavelength selection by adjusting structural parameters, reduce scattering loss and enhance the heat resistance of the laser. p-type AlGaAs layer (p-Al) 0.4 Ga 0.6 As) the upper side is p-Al in turn for controlling the propagation of light in the vertical direction y Ga 1-y An As graded index (p-GRIN) layer, a p-type region semiconductor material (p-GaAs), an ITO (indium tin oxide) layer, and a p-type electrode. The combination of the p-type electrode and the ITO layer enhances the carrier transmittance of the photoelectrode, enhances the electroluminescent effect and achieves the purpose of reducing scattering loss.
The ITO layer is used as a part of the current injection channel in the laser, and plays a critical role in the current injection of the whole laser, and is also a key for realizing the electric injection. It has high transparency and light can penetrate the ITO layer without being blocked too much, which is critical for the output efficiency of the laser. Transparent electrodes mean that light can more easily enter the active area of the laser, thereby increasing the generation of excited states. Furthermore, the ITO layer is a good conductive material capable of providing sufficient current through the electrical injection region. This is critical for maintaining the excited state and lasing effect. In addition, the ITO layer can also be used as a heat dissipation electrode of the laser to conduct out generated heat so as to keep the stable working temperature of the laser. The stable operating temperature helps to improve the efficiency and reliability of the laser.
The lower side of the active region is directly connected with the photonic crystal layer of the n-type region, so that the purpose of wavelength selection can be realized, the scattering loss is reduced, and the heat resistance of the laser is enhanced. n-Al 0.4 Ga 0.6 The underside of As is similar to the p-type region, in turn n-Al controlling light propagation in the vertical direction z Ga 1-z As(0<z<0.4 Graded index (n-GRIN) layer, n-type region semiconductor material (n-GaAs), n-type electrode, and silicon oxide layer (SiO) 2 ) And a silicon-based substrate (Si). Wherein the n-GRIN and p-GRIN are not of the same composition, and the resulting beam can be selected and controlled within a small range by composition differences.
The invention directly prepares the surface emitting laser with high stability on the silicon substrate, simultaneously avoids the complex processes of direct epitaxial growth, wafer bonding and the like in the traditional silicon substrate heterogeneous integration, can be prepared by adopting a spin coating method and a thermal evaporation method, has simple process, and provides a feasible scheme for the applications of silicon substrate polishing interconnection, monolithic integrated photoelectric chips and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of a silicon-based electrically pumped perovskite photonic crystal surface emitting laser of the present invention; wherein, 1 is Si substrate; 2-SiO 2 A silicon oxide layer; 3-n-type electrode; 4-n-GaAs n-gallium arsenide layer; 5-n-GRIN n-Al z Ga 1-z An As graded index layer; 6-n-Al 0.4 Ga 0.6 An As n type aluminum gallium arsenide layer; 7-n-SCH n-InGaAs superlattice layer; 8—a two-dimensional perovskite light emitting layer; 9-p-SCH p-InGaAs superlattice layer; 10-SiN X A silicon nitride layer; 11-p-Al 0.4 Ga 0.6 An As p type aluminum gallium arsenide layer; 12-p-GRIN p-Al y Ga 1-y An As graded index layer; 13-p-GaAs p-type gallium arsenide layer; 14—an ITO layer; 15-p-type electrode.
FIG. 2 is a side view of an ITO layer of the present invention.
Fig. 3 is a top view of a photonic crystal layer according to the present invention, including a gaas layer, a graded index layer, and an algaas layer (i.e., 16, 17 in fig. 1), wherein the circular holes 18 are three layers of air holes penetrating the gaas layer, the graded index layer, and the algaas layer.
Detailed Description
Various exemplary embodiments of the invention will now be described in detail, which should not be considered as limiting the invention, but rather as more detailed descriptions of certain aspects, features and embodiments of the invention.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In addition, for numerical ranges in this disclosure, it is understood that each intermediate value between the upper and lower limits of the ranges is also specifically disclosed. Every smaller range between any stated value or stated range, and any other stated value or intermediate value within the stated range, is also encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention. All documents mentioned in this specification are incorporated by reference for the purpose of disclosing and describing the methods and/or materials associated with the documents. In case of conflict with any incorporated document, the present specification will control.
It will be apparent to those skilled in the art that various modifications and variations can be made in the specific embodiments of the invention described herein without departing from the scope or spirit of the invention. Other embodiments will be apparent to those skilled in the art from consideration of the specification of the present invention. The specification and examples of the present invention are exemplary only.
As used herein, the terms "comprising," "including," "having," "containing," and the like are intended to be inclusive and mean an inclusion, but not limited to.
The invention provides an electrically pumped photonic crystal surface emitting laser on silicon substrate, which sequentially comprises a Si substrate (Si) and a silicon oxide layer (SiO) 2 ) N-type electrode, n-type gallium arsenide layer (n-GaAs), n-Al z Ga 1-z As (z=0-0.4) graded index layer (n-GRIN), n-aluminum gallium arsenide layer (n-Al) 0.4 Ga 0.6 As), n-InGaAs superlattice layer (nSCH), two-dimensional perovskite light-emitting layer, p-InGaAs superlattice layer (p-SCH), silicon nitride layer (SiN) X ) P-type AlGaAs layer (p-Al 0.4 Ga 0.6 As)，p-Al y Ga 1-y An As graded index layer (p-GRIN), a p-type gallium arsenide layer (p-GaAs), an ITO layer and a p-type electrode.
Wherein, si: the silicon substrate, which provides structural support and thermal management for the laser, is 0.55mm thick.
SiO 2 : and a silicon oxide layer, which is used as an insulating and protective layer of the photoelectrode, and has a thickness of 300nm.
n-type electrode: the thickness of the current is 50-200nm.
n-GaAs: the n-type gallium arsenide layer is used as an n-type semiconductor material of the laser and has the thickness of 90-150nm.
n-GRIN: n-type graded index layer (n-Al z Ga 1-z As，0.1<z<0.4 For controlling the propagation of light in the vertical direction, with a thickness of 80-120nm.
n-AlGaAs: n-type aluminum gallium arsenide (Al 0.4 Ga 0.6 As) layer for modulating the optical field distribution of the laser, with a thickness of 950-1000nm.
n-SCH: the n-InGaAs superlattice layer is used for enhancing the efficiency and the performance of the laser, and has the thickness of 10-250nm.
Two-dimensional perovskite light emitting layer: the luminescent layer of the two-dimensional perovskite material, which is used for generating the light required by the laser, can be prepared in large quantity by a solution method, and has the thickness of 500-2000nm.
p-SCH: the p-InGaAs superlattice layer is used for enhancing the efficiency and the performance of the laser, and has the thickness of 10-250nm.
SiN X : silicon nitride (SiN) X ，0.8<X<1.5 And the refractive index and the transmission characteristic of the light can be adjusted, so that the light is guided and limited in a required area, and the thickness is 250-350nm.
p-AlGaAs: p-type aluminum gallium arsenide (Al 0.4 Ga 0.6 As) layer for modulating the optical field distribution of the laser, with a thickness of 90-150nm.
p-GRIN: p-type graded index layer (p-Al y Ga 1-y As,0.1<y<0.4 For controlling the propagation of light in the vertical direction, with a thickness of 80-120nm.
p-GaAs: the p-type gallium arsenide layer is used as the p-type semiconductor material of the laser, and the thickness of the p-type gallium arsenide layer is 90-150nm.
ITO layer: and the indium tin oxide coating layer is used for improving the transparency and the conductivity of the photoelectrode, and has the thickness of 100-500nm.
p-type electrode: current is introduced and output as a photoelectrode. Coating the ITO layer with thickness of 50-200nm.
The AlGaAs composition of the n-type region and the p-type graded index layer are not identical, wherein the n-type region (6) is Al z Ga 1- z As(0.1<z<0.4 With p-type region (11) of Al y Ga 1-y As(0.1<y<0.4). By adjusting the y and z values, the components on two sides are different, the refractive indexes on two sides are different, and light finally exits from one side with a large refractive index.
The two sides of the active area (n-SCH, two-dimensional perovskite luminescent layer and p-SCH) respectively comprise a photonic crystal layer structure (corresponding to 16 and 17 in figure 1), the photonic crystal layer is directly connected or not directly connected with the active area, and photonic crystals are adopted to optimize the structures such as a resonant cavity (corresponding to 4-13 in figure 1) of the laser and the like so as to achieve wavelength control and mode selection. In addition, the photonic crystal layer contains a pore structure (corresponding to 18 in fig. 3) and appropriate lattice parameters, which can be adjusted appropriately to meet the requirements of specific device functions. The perovskite light-emitting layer of the active region and the superlattice layers adjacent to the two sides form a new light-emitting layer, so that the carrier relaxation efficiency is increased.
The ITO layer is an important structure for implementing electric injection during electric pumping. The ITO layer is used in the laser as part of the current injection channel. The laser includes an n-type region and a p-type region, and the ITO layer is positioned in the p-type region for providing current injection. Since the ITO layer has high transparency, light can penetrate the ITO layer without being too blocked, which is critical to the output efficiency of the laser. Transparent electrodes mean that light can more easily enter the active area of the laser, thereby increasing the generation of excited states. The ITO layer is a good conductive material that can provide sufficient current through the electrical injection region. This is critical for maintaining the excited state and lasing effect. In addition, the ITO layer can also be used as a heat dissipation electrode of the laser to conduct out generated heat so as to keep the stable working temperature of the laser. The stable operating temperature helps to improve the efficiency and reliability of the laser. The electrode and the ITO layer are combined to realize electric injection, the carrier passing rate is increased, the scattering loss is reduced, the structure can be optimized by changing the thickness of the ITO layer, the current threshold is regulated, and the energy utilization efficiency is improved.
Thicker ITO layers can reduce the penetration of the vertical optical field through the ITO and to the surface to reduce the scattering loss of the ITO surface, and simultaneously avoid carrier accumulation at the corners of the injection region, thereby causing uneven carrier injection and poorer threshold performance. Therefore, the purpose of reducing the threshold current can be achieved by thickening the ITO layer. The thickness and refractive index gradient of the photonic crystal layer determine the operating wavelength of the laser. By adjusting the thickness of the photonic crystal layer, laser output with different wavelengths can be realized. Increasing the thickness of the photonic crystal results in the laser operating in a longer wavelength range, while decreasing the thickness results in a shorter operating wavelength. Thus, thickening of the photonic crystal can change the emission wavelength of the laser.
The structural schematic diagram of the silicon-based electrically pumped perovskite photonic crystal surface-emitting laser is shown in figure 1; wherein, 1 is Si substrate; 2-SiO 2 A silicon oxide layer; 3-n-type electrode; 4-n-GaAs n-gallium arsenide layer; 5-an n-GRIN n graded index layer; 6-n-AlGaAs n-type AlGaAs layer; 7-n-SCH n-superlattice layer; 8—a two-dimensional perovskite light emitting layer; 9-p-SCHP type superlattice layer; 10-SiN X A silicon nitride layer; 11-p-AlGaAs p-type AlGaAs layer; 12-p-GRIN p-graded index layer; 13-p-GaAs p-type gallium arsenide layer; 14—an ITO layer; 15-p-type electrode.
16 in FIG. 1 is a photonic crystal layer (n-GaAs, n-GRIN and n-AlGaAs): an optical material having a periodic refractive index or refractive index variation, for controlling and guiding light structures, having a lattice parameter of 260-285nm and a thickness of 1120-1270nm.
17 in FIG. 1 is a photonic crystal layer (p-AlGaAs, p-GRIN and p-GaAs): an optical material having a periodic refractive index or refractive index variation, for controlling and guiding a structure of light, having a lattice parameter of 260-285nm and a thickness of 300-400nm.
The photonic crystal layer shown at 16, 17 in fig. 1 has air holes distributed throughout the photonic crystal layer, which are not shown in fig. 1.
A side view of an ITO layer of the present invention is shown in fig. 2.
The ITO layer can be formed by deposition etching; the ITO layer is a whole, the convex structure is a periodic structure, and the ITO layer comprises a plurality of bulges for increasing conductivity, surface hardness and durability. The cross section length of each single convex structure is 5-10 mu m, and the distribution interval of the convex structures is 5-10 mu m; the thickness of the raised structures is 30-50nm, preferably 40nm.
The top view of the photonic crystal layer of the present invention is shown in fig. 3, and comprises a gallium arsenide layer, a graded index layer and an aluminum gallium arsenide layer (i.e. 16 and 17 in fig. 1), wherein the holes 18 are three layers of air holes penetrating through the gallium arsenide layer, the graded index layer and the aluminum gallium arsenide layer.
In fig. 3, reference numeral 18 denotes air holes for controlling and regulating the propagation of light, guiding and transmitting light waves of a specific wavelength, confining or concentrating the light near the air holes for enhancing the intensity of interaction of the light with the substance, and the center-to-center spacing of adjacent holes, i.e., lattice parameter.
The air holes in fig. 3 are schematic, the shape of the air holes is not limited to a circle, but can be any one of a rectangle, a triangle and a ring, the size of the air holes can affect the threshold power of the laser, and smaller holes can result in lower threshold power, because they can increase the interaction between light and the excitation medium, and improve the energy conversion efficiency. The hole spacing, i.e., lattice constant, is larger, which generally results in a photonic bandgap at longer wavelengths, while smaller hole spacing results in a photonic bandgap at shorter wavelengths. Thus, by adjusting the hole size, light of a particular wavelength can be selectively amplified. In addition, the size and arrangement of the holes affects the propagation mode of the laser. Larger hole spacing may support different modes, while smaller hole spacing may limit laser mode selection. This can be used to adjust the mode and directionality of the laser output.
In the embodiment of the invention, the ITO layer of the silicon-based electro-pumped perovskite photonic crystal surface-emitting laser is formed by deposition etching. The ITO layer is an integral body, the convex-shaped structure is a periodic structure, the section length of the single convex structure is 6 mu m, and the distribution interval is 8.65 mu m; the thickness of the convex structure is 40nm, and the convex structure can cause the frequency shift of light. This is because the convex portion causes a phase change when light passes therethrough, resulting in a change in the frequency of the light. Raised structures may also be used to modulate the intensity of light. When the light wave is scattered or absorbed by the convex part, the intensity of the light changes along with the periodic change of the structure, so that the intensity modulation is realized; the preparation methods of the rest structural layers adopt spin coating and thermal evaporation methods commonly used in the field, and deposition etching and spin coating and thermal evaporation methods are all conventional technical means in the field, are not used as the key points of patent protection of the invention, and are not repeated here.
Example 1
A silicon-based electrically pumped perovskite photonic crystal surface emitting laser sequentially comprises the following structures from bottom to top: si substrate, siO 2 N-electrode, n-GaAs, n-GRIN (n-Al) z Ga 1-z As，0<z<0.4)、n-Al 0.4 Ga 0.6 As, n-SCH, two-dimensional perovskite light-emitting layer, p-SCH, siN X 、p-Al 0.4 Ga 0.6 As、p-GRIN(p-Al y Ga 1-y As，0<y<0.4 p-GaAs, ITO layer, and p-type electrode;
wherein the Si substrate has a thickness of 0.55mm, siO 2 The thickness of the layer is 300nm, the thickness of the n-type electrode is 100nm, the thickness of the n-GaAs layer is 100nm, the thickness of the n-GRIN layer is 100nm, and the n-Al layer is 0.4 Ga 0.6 The As layer has a thickness of 960nm, the n-SCH layer has a thickness of 120nm, the two-dimensional perovskite light-emitting layer has a thickness of 562nm, the p-SCH layer has a thickness of 120nm, and SiN X The thickness of the layer is 300nm, p-Al 0.4 Ga 0.6 The thickness of the As layer was 100nm, the thickness of the p-GRIN layer was 100nm, the thickness of the p-GaAs layer was 100nm, the thickness of the ITO layer was 200nm, and the thickness of the p-type electrode was 100nm.
In this embodiment, the lattice parameters of the photonic crystal layers (corresponding to 16 and 17 in fig. 1) are 260nm, and the thicknesses thereof are 1160nm and 300nm, respectively.
In this embodiment, the air holes (corresponding to 18 in fig. 3) on the photonic crystal layer are circular in shape, and have a diameter of 300nm, and the center-to-center spacing between adjacent air holes is the lattice parameter of the photonic crystal layer.
Example 2
A silicon-based electrically pumped perovskite photonic crystal surface emitting laser sequentially comprises the following structures from bottom to top: si substrate, siO 2 N-typeElectrodes, n-GaAs, n-GRIN, n-AlGaAs, n-SCH, two-dimensional perovskite light-emitting layer, p-SCH, siN X p-AlGaAs, p-GRIN, p-GaAs, ITO layer and p-type electrode;
wherein the Si substrate has a thickness of 0.55mm, siO 2 The thickness of the layer was 300nm, the thickness of the n-type electrode was 150nm, the thickness of the n-GaAs layer was 120nm, the thickness of the n-GRIN layer was 100nm, and the thickness of the n-Al layer was 150nm 0.4 Ga 0.6 The As layer has a thickness of 480 nm, the n-SCH layer has a thickness of 180nm, the two-dimensional perovskite light-emitting layer has a thickness of 720 nm, the p-SCH layer has a thickness of 180nm, and SiN X The thickness of the layer is 300nm, p-Al 0.4 Ga 0.6 The thickness of the As layer was 120nm, the thickness of the p-GRIN layer was 80nm, the thickness of the p-GaAs layer was 100nm, the thickness of the ITO layer was 200nm, and the thickness of the p-type electrode was 100nm.
In this embodiment, the lattice parameter of the photonic crystal layer (corresponding to 16 and 17 in fig. 1) is 260nm, and the thicknesses thereof are 1200nm and 300nm, respectively.
In this embodiment, the air holes (corresponding to 18 in fig. 3) on the photonic crystal layer are triangular with a side length of 400-500nm, and the center-to-center distance between adjacent air holes is the lattice parameter of the photonic crystal layer.
Example 3
A silicon-based electrically pumped perovskite photonic crystal surface emitting laser sequentially comprises the following structures from bottom to top: si substrate, siO 2 N-electrode, n-GaAs, n-GRIN, n-AlGaAs, n-SCH, two-dimensional perovskite light-emitting layer, p-SCH, siN X p-AlGaAs, p-GRIN, p-GaAs, ITO layer and p-type electrode;
wherein the Si substrate has a thickness of 0.55mm, siO 2 The thickness of the layer is 300nm, the thickness of the n-type electrode is 100nm, the thickness of the n-GaAs layer is 100nm, the thickness of the n-GRIN layer is 100nm, and the n-Al layer is 0.4 Ga 0.6 The As layer has a thickness of 960nm, the n-SCH layer has a thickness of 120nm, the two-dimensional perovskite light-emitting layer has a thickness of 562nm, the p-SCH layer has a thickness of 120nm, and SiN X The thickness of the layer is 300nm, p-Al 0.4 Ga 0.6 The thickness of the As layer was 100nm, the thickness of the p-GRIN layer was 100nm, the thickness of the p-GaAs layer was 100nm, the thickness of the ITO layer was 400nm, and the thickness of the p-type electrode was 100nm.
In this example, the lattice parameters of the photonic crystal layers (corresponding to 16 and 17 in FIG. 1) were 285nm, and the thicknesses were 1160nm and 300nm, respectively.
In this embodiment, the air holes (corresponding to 18 in fig. 3) on the photonic crystal layer are circular in shape, and have a diameter of 300nm, and the center-to-center distance between adjacent air holes is the lattice parameter of the photonic crystal layer.
Example 4
A silicon-based electrically pumped perovskite photonic crystal surface emitting laser sequentially comprises the following structures from bottom to top: si substrate, siO 2 N-electrode, n-GaAs, n-GRIN (n-Al) z Ga 1-z As，0<z<0.4)、n-Al 0.4 Ga 0.6 As, n-SCH, two-dimensional perovskite light-emitting layer, p-SCH, siN X 、p-Al 0.4 Ga 0.6 As、p-GRIN(p-Al y Ga 1-y As，0<y<0.4 p-GaAs, ITO layer, and p-type electrode;
wherein the Si substrate has a thickness of 0.55mm, siO 2 The thickness of the layer was 300nm, the thickness of the n-type electrode was 150nm, the thickness of the n-GaAs layer was 150nm, the thickness of the n-GRIN layer was 120nm, and the thickness of the n-Al layer was 150nm 0.4 Ga 0.6 The As layer has a thickness of 480 nm, the n-SCH layer has a thickness of 200nm, the two-dimensional perovskite light-emitting layer has a thickness of 720 nm, the p-SCH layer has a thickness of 200nm, and SiN X The thickness of the layer is 350nm, p-Al 0.4 Ga 0.6 The thickness of the As layer was 120nm, the thickness of the p-GRIN layer was 120nm, the thickness of the p-GaAs layer was 150nm, the thickness of the ITO layer was 300nm, and the thickness of the p-type electrode was 150nm.
In this embodiment, the lattice parameter of the photonic crystal layer (corresponding to 16 and 17 in fig. 1) is 260nm, and the thicknesses thereof are 1250nm and 390nm, respectively.
In this embodiment, the air holes (corresponding to 18 in fig. 3) on the photonic crystal layer are circular in shape, and have a diameter of 300nm, and the center-to-center spacing between adjacent air holes is the lattice parameter of the photonic crystal layer.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (10)
1. The surface-emitting laser is characterized in that the active region comprises an n-type superlattice layer, a two-dimensional perovskite light-emitting layer and a p-type superlattice layer which are sequentially arranged.
2. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 1, wherein an n-type photonic crystal layer is disposed on the other side of the n-type superlattice layer, and a p-type photonic crystal layer is disposed on the other side of the p-type superlattice layer.
3. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 2, wherein the p-type photonic crystal layer is contiguous with the p-type superlattice layer by a silicon nitride layer.
4. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 2, wherein the n-type photonic crystal layer comprises an n-type gallium arsenide layer, an n-type graded index layer, and an n-type aluminum gallium arsenide layer, which are sequentially arranged; the thickness of the n-type photonic crystal layer is 1120-1270nm;
the p-type photonic crystal layer comprises a p-type aluminum gallium arsenide layer, a p-type graded refractive index layer and a p-type gallium arsenide layer which are sequentially arranged; the thickness of the p-type photonic crystal layer is 300-400nm.
5. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 2, further comprising an ITO layer; the ITO layer is connected with the p-type photonic crystal layer.
6. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 1, wherein the structure is, in order from bottom to top, a Si substrate, a silicon oxide layer, an n-type electrode, an n-type gallium arsenide layer, an n-type graded index layer, an n-type aluminum gallium arsenide layer, an n-type superlattice layer, a two-dimensional perovskite light emitting layer, a p-type superlattice layer, a silicon nitride layer, a p-type aluminum gallium arsenide layer, a p-type graded index layer, a p-type gallium arsenide layer, an ITO layer, and a p-type electrode; the n-type gallium arsenide layer, the n-type graded refractive index layer and the n-type aluminum gallium arsenide layer form an n-type photonic crystal layer; the P-type AlGaAs layer, the P-type graded index layer and the P-type GaAs layer form a P-type photonic crystal layer.
7. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 6, wherein the Si substrate has a thickness of 0.4 to 0.6mm;
the thickness of the silicon oxide layer is 200-400nm;
the thickness of the n-type electrode is 50-200nm;
the thickness of the n-type gallium arsenide layer is 90-150nm;
the n-type graded index layer is 80-120nm;
the thickness of the n-type aluminum gallium arsenide layer is 950-1000nm;
the thickness of the n-type superlattice layer is 10-250nm;
the thickness of the two-dimensional perovskite luminescent layer is 500-2000nm;
the thickness of the p-type superlattice layer is 10-250nm;
the thickness of the silicon nitride layer is 250-350nm;
the thickness of the p-type aluminum gallium arsenide layer is 90-150nm;
the thickness of the p-type graded refractive index layer is 80-120nm;
the thickness of the p-type gallium arsenide layer is 90-150nm;
the thickness of the ITO layer is 100-500nm;
the thickness of the p-type electrode is 50-200nm.
8. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 2, wherein the n-type photonic crystal layer and the p-type photonic crystal layer are each provided with a through air hole therein; the diameter of the air holes is 200-500 nm, and the distribution interval is 200-800nm.
9. The silicon-based electrically pumped perovskite photonic crystal surface emitting laser of claim 5, wherein the surface of the ITO layer is provided with a raised structure; the section length of the convex structure is 5-10 mu m, and the distribution interval is 5-10 mu m; the thickness of the convex structure is 30-50nm.
10. Use of a silicon-based electrically pumped perovskite photonic crystal surface emitting laser as defined in any one of claims 1 to 9 in the field of communications.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311305968.0A CN117134193A (en) | 2023-10-10 | 2023-10-10 | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311305968.0A CN117134193A (en) | 2023-10-10 | 2023-10-10 | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117134193A true CN117134193A (en) | 2023-11-28 |
Family
ID=88854702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311305968.0A Pending CN117134193A (en) | 2023-10-10 | 2023-10-10 | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117134193A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538537A (en) * | 2003-04-15 | 2004-10-20 | 松下电器产业株式会社 | Semiconductor luminescent device and manufacturing method thereof |
| CN108063365A (en) * | 2017-12-12 | 2018-05-22 | 中国科学院半导体研究所 | The preparation method of electric pump perovskite quantum dot laser |
| US10340659B1 (en) * | 2018-06-14 | 2019-07-02 | Conary Enterprise Co., Ltd. | Electronically pumped surface-emitting photonic crystal laser |
| CN111162446A (en) * | 2019-12-27 | 2020-05-15 | 山东大学 | Electric pumping perovskite laser |
| CN210693015U (en) * | 2019-12-02 | 2020-06-05 | 中山德华芯片技术有限公司 | Long wavelength GaInNAs/InGaAs composite quantum dot vertical cavity surface emitting laser |
| CN113872047A (en) * | 2021-08-26 | 2021-12-31 | 埃特曼(北京)半导体技术有限公司 | Laser and preparation method thereof |
| CN115938916A (en) * | 2022-12-16 | 2023-04-07 | 中芯越州集成电路制造(绍兴)有限公司 | Silicon-based gallium arsenide epitaxial structure, laser and preparation method |
| CN116169560A (en) * | 2023-04-23 | 2023-05-26 | 南京邮电大学 | Gallium nitride-based photonic crystal surface-emitting laser and preparation method thereof |
| CN116646823A (en) * | 2023-05-30 | 2023-08-25 | 大连理工大学 | Perovskite quantum dot laser based on photonic crystal microcavity structure and preparation method thereof |
-
2023
- 2023-10-10 CN CN202311305968.0A patent/CN117134193A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538537A (en) * | 2003-04-15 | 2004-10-20 | 松下电器产业株式会社 | Semiconductor luminescent device and manufacturing method thereof |
| CN108063365A (en) * | 2017-12-12 | 2018-05-22 | 中国科学院半导体研究所 | The preparation method of electric pump perovskite quantum dot laser |
| US10340659B1 (en) * | 2018-06-14 | 2019-07-02 | Conary Enterprise Co., Ltd. | Electronically pumped surface-emitting photonic crystal laser |
| CN210693015U (en) * | 2019-12-02 | 2020-06-05 | 中山德华芯片技术有限公司 | Long wavelength GaInNAs/InGaAs composite quantum dot vertical cavity surface emitting laser |
| CN111162446A (en) * | 2019-12-27 | 2020-05-15 | 山东大学 | Electric pumping perovskite laser |
| CN113872047A (en) * | 2021-08-26 | 2021-12-31 | 埃特曼(北京)半导体技术有限公司 | Laser and preparation method thereof |
| CN115938916A (en) * | 2022-12-16 | 2023-04-07 | 中芯越州集成电路制造(绍兴)有限公司 | Silicon-based gallium arsenide epitaxial structure, laser and preparation method |
| CN116169560A (en) * | 2023-04-23 | 2023-05-26 | 南京邮电大学 | Gallium nitride-based photonic crystal surface-emitting laser and preparation method thereof |
| CN116646823A (en) * | 2023-05-30 | 2023-08-25 | 大连理工大学 | Perovskite quantum dot laser based on photonic crystal microcavity structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6771680B2 (en) | Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL) | |
| US6936486B2 (en) | Low voltage multi-junction vertical cavity surface emitting laser | |
| US5936266A (en) | Semiconductor devices and methods with tunnel contact hole sources | |
| CN1279668C (en) | Wave length adjustable vertical cavity surface emitting laser diode | |
| WO2021102722A1 (en) | Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor | |
| JPH09172229A (en) | Transparent substrate vertical resonance type surface luminescence laser manufactured by semiconductor wafer bonding | |
| CN110620169B (en) | Transverse current limiting high-efficiency light-emitting diode based on resonant cavity | |
| CN115548880A (en) | Vertical cavity surface emitting laser array with multi-tunnel junction flip-chip surface relief structure | |
| CN100461558C (en) | Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method | |
| CN106785909A (en) | For the vertical cavity surface emitting laser arrays of total colouring illumination | |
| CN111987588A (en) | Semiconductor laser with optical field concentration structure | |
| CN103166108A (en) | Edge-emitting crystal laser with circular spot output and low divergence angle and composite waveguide device | |
| CN105932542B (en) | A kind of transistor vertical cavity surface emitting lasers | |
| CN211789982U (en) | Compact multi-wavelength vertical cavity surface emitting semiconductor laser | |
| CN111785819B (en) | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof | |
| CN110716260B (en) | Communication chip of homogeneous integrated laser, reflector and detector and preparation method | |
| CN212011600U (en) | Single longitudinal mode edge-emitting laser with lateral photogate oxidation limiting structure | |
| CN116706681A (en) | Multi-junction vertical cavity surface emitting laser structure and preparation method thereof | |
| CN112310809A (en) | Dual-resonant cavity VCSEL and manufacturing method thereof | |
| CN114188819B (en) | 1342 nanometer wavelength high-power microstructure DFB laser | |
| CN216903721U (en) | Vertical cavity surface emitting laser array with tunable wavelength | |
| CN117134193A (en) | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser | |
| CN113851563B (en) | Thin film type semiconductor chip structure and photoelectric device using same | |
| CN216529835U (en) | 940nm vertical cavity surface emitting laser epitaxial wafer | |
| JPH118406A (en) | Surface-emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |