CN117117635A - Semiconductor optical amplifier and manufacturing method thereof - Google Patents
Semiconductor optical amplifier and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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Abstract
The application discloses a semiconductor optical amplifier, comprising: the active layer waveguide, two sides are n-p-n doped waveguides, including first waveguide layer, quantum well layer and second waveguide layer that set up sequentially; and the passive layer waveguide is positioned below the active layer waveguide and the n-p-n doped waveguide. The manufacturing method is consistent with the common buried heterojunction structure, and the process is simple. According to the semiconductor optical amplifier provided by the application, the N-type layer is added with the passive waveguide layer, so that the optical field in the quantum well active layer is pulled downwards, the overlapping of the optical field and the P-type layer is reduced, the optical field transmission loss is reduced, and meanwhile, the optical field limiting factor is reduced, so that the semiconductor optical amplifier provided by the application can realize larger gain and simultaneously improve saturated output optical power.
Description
Technical Field
The application relates to the technical field of photoelectrons, in particular to a semiconductor optical amplifier and a manufacturing method thereof.
Background
With the development of application technologies such as optical communication, optical fiber sensing, and laser radar, semiconductor Optical Amplifiers (SOAs) are increasingly used. The semiconductor optical amplifier has the advantages of small size, wide amplifying wave band, low cost and the like, but has the problem of nonlinearity in a power saturation state, and in an application scene with a long transmission distance and a long detection distance, the power requirement on a laser light source is higher and higher, so that the higher and higher requirements are put on the gain and the saturated optical power of the semiconductor optical amplifier.
At present, a plurality of researches and companies propose various schemes for improving the maximum saturated output optical power of an SOA, for example, a diffraction limited gain waveguide is adopted at an output end or a flat-plate coupled optical waveguide (SCOW) is adopted for realizing the maximum saturated output optical power of the SOA, but the two schemes have the defects that the diffraction limited gain waveguide is only suitable for a multi-transverse-mode application scene due to the fact that the waveguide is too wide, and the gain of the SOA is reduced due to the flat-plate coupled optical waveguide structure.
Disclosure of Invention
In order to solve the problems, the application provides a semiconductor optical amplifier capable of realizing larger gain and improving saturated output optical power and a manufacturing method thereof.
In a first aspect of the present application, there is provided a semiconductor optical amplifier including, in a thickness direction:
the active layer waveguide, two sides are n-p-n doped waveguides, including first waveguide layer, quantum well layer and second waveguide layer that set up sequentially;
and the passive layer waveguide is positioned below the active layer waveguide and the n-p-n doped waveguide.
Further, the semiconductor optical amplifier in the length direction includes: the high-gain section is the semiconductor optical amplifier input end, the gradual change section is connected with the high-gain section and the high-saturation output section, and the high-saturation output section is the semiconductor optical amplifier output end;
the active layer waveguide includes in a length direction: a high gain section active layer waveguide, a graded section active layer waveguide and a high saturation output section active layer waveguide;
the passive layer waveguide includes in the length direction: a high gain section passive waveguide, a transition section passive waveguide and a high saturation output section passive waveguide;
the width of the high-gain section active layer waveguide is 2-4 mu m, the length of the high-saturation output section active layer waveguide is 1000-2500 mu m, the width of the high-saturation output section active layer waveguide is 4-8 mu m, the length of the high-saturation output section active layer waveguide is 500-2000 mu m, the width of the graded section active layer waveguide input end waveguide is the same as that of the high-gain section active layer waveguide, the width of the graded section active layer waveguide output end waveguide is the same as that of the high-saturation output section active layer waveguide, and the length of the graded section active layer waveguide is 100-500 mu m.
Further, the thicknesses of the high-gain section active layer waveguide, the graded section active layer waveguide and the high-saturation output section active layer waveguide are consistent, and the thicknesses of the high-gain section passive waveguide, the graded section passive waveguide and the high-saturation output section passive waveguide are the same.
Further, the thickness of the passive layer waveguide is 150-400 nm.
Further, the active layer waveguide and the passive layer waveguide are spaced apart by 0.5 to 1.5 μm in the thickness direction.
Further, the included angle between the active layer waveguide and the normal line of the end face of the semiconductor amplifier is 6-10 degrees.
Further, the quantum well layer is an InGaAsP or AlGaInAs multi-quantum well layer, and the first waveguide layer (10) and the second waveguide layer (12) are graded refractive index layers.
Further, the passive layer waveguide is made of InGaAsP material, and the material band gap is 1.0 PQ-1.2 PQ.
Further, the end surfaces of the high gain section and the high saturation output section are plated with an antireflection film, and the reflectivity of the antireflection film is less than or equal to 0.5%.
In a second aspect of the present application, there is provided a method of manufacturing a semiconductor optical amplifier, comprising:
s1, sequentially growing a buffer layer, a passive layer waveguide, an N-type InP cover layer, a first waveguide layer, a quantum well layer, a second waveguide layer and a P-InP cover layer on an InP substrate;
s2, growing SiO 2 Photoetching and etching to manufacture a high-gain section active layer waveguide, a graded section active layer waveguide and a high-saturation output section active layer waveguide mask;
s3, etching and Br utilizing RIE 2 ：HBr：H 2 O 2 Etching to manufacture a high-gain section active layer waveguide, a graded section active layer waveguide and a high-saturation output section active layer waveguide by using an etching solution with the etching depth of 1.4-1.6 mu m, wherein the etching solution is 1.2:100:400;
s4, cleaning the corroded wafer, sequentially growing a p-InP spacer layer, an n-InP spacer layer and a p-InP cover layer by MOCVD until the corrosion area is flat, and then removing SiO 2 A mask, a p-InP cover layer and an electrode contact layer are continuously grown in sequence;
s5, growing SiO 2 A mask passivation layer for manufacturing a window and a cleavage area by photoetching;
s6, manufacturing an electrode, cleaving and coating.
According to the semiconductor optical amplifier provided by the application, the N-type layer is added with the passive waveguide layer, so that the optical field in the quantum well active layer is pulled downwards, the overlapping of the optical field and the P-type layer is reduced, the optical field transmission loss is reduced, and meanwhile, the optical field limiting factor is reduced, so that the semiconductor optical amplifier provided by the application can realize larger gain and simultaneously improve saturated output optical power. And the manufacturing method is consistent with a common buried heterojunction structure, and the process is simple.
Drawings
Fig. 1 is a schematic side view of a semiconductor optical amplifier according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional structure of a high gain section, a transition section and a high saturation output section of a semiconductor optical amplifier according to an embodiment of the present application.
Fig. 3 is a schematic diagram of an active layer waveguide structure of a semiconductor optical amplifier according to an embodiment of the present application.
Fig. 4 shows a high gain section optical field distribution (a) and a high saturation output section optical field distribution (b) of a semiconductor optical amplifier according to an embodiment of the present application.
The reference numerals are expressed as:
1. a substrate; 2. a buffer layer; 3. a passive layer waveguide; 4. an n-InP cap layer; 5. a p-InP spacer layer; 6. an n-InP spacer layer; 7. a p-InP cap layer; 8. an electrode contact layer; 9. a P-type electrode layer; 10. a first waveguide layer; 11. a quantum well layer; 12. a second waveguide layer; 13. a high gain section; 14. a gradual change section; 15. a high saturation output section; 16. a high gain section active layer waveguide; 17. graded active layer waveguide; 18. high saturation output section active layer waveguide; 19. a first antireflection film; 20. and a second antireflection film.
Detailed Description
In order to better understand the above technical solutions, the following detailed description of the technical solutions of the embodiments of the present application is given by using the accompanying drawings and specific embodiments.
The gain of a semiconductor optical amplifier can be expressed as follows:
G 0 ∝exp((Γg m -α)L)(1)
wherein Γ is a quantum well active region optical field limiting factor, g m For material gain, α is the transmission loss per unit length, L is the chip length, and the saturated output optical power of a semiconductor optical amplifier can be expressed as follows:
wherein A is the cross-sectional area of the active region, g N For differential gain, τ is carrier lifetime.
As can be seen from the formulas (1) and (2), in order to obtain a larger gain, the optical field limiting factor Γ and gain g need to be increased m And cavity length L and reduce material loss α, while obtaining a larger saturated output optical power requires an increase in active region cross-sectional area a and a decrease in optical field confinement factor Γ. Therefore, the high gain and the high saturation output optical power need to comprehensively consider the factors, and the high gain section increases the material gain, reduces the loss, increases the length, and the high saturation output power section increases the sectional area of the active region, reduces the optical field limiting factor and reduces the carrier life tau.
Referring to fig. 1 to 4, according to an embodiment of the present application, a semiconductor optical amplifier includes, in a thickness direction:
the active layer waveguide, two sides of which are n-p-n doped waveguides, comprises a first waveguide layer 10, a quantum well layer 11 and a second waveguide layer 12 which are sequentially arranged;
a passive layer waveguide 3 located below the active layer waveguide and the n-p-n doped waveguide.
According to the semiconductor optical amplifier provided by the embodiment of the application, the passive layer waveguide 3 is added through the N-type layer, so that an optical field in the quantum well active layer is pulled downwards, the overlapping of the optical field and the P-type layer is reduced, the optical field transmission loss is reduced, and meanwhile, the optical field limiting factor is reduced, so that the semiconductor optical amplifier provided by the application can realize larger gain and simultaneously improve saturated output optical power.
In some embodiments, the semiconductor optical amplifier includes, in a length direction: the high-gain section 13 is the input end of the semiconductor optical amplifier, the gradual change section 14 is connected with the high-gain section 13 and the high-saturation output section 15, and the high-saturation output section 15 is the output end of the semiconductor optical amplifier;
the active layer waveguide includes in a length direction: a high gain section active layer waveguide 16, a graded section active layer waveguide 17, and a high saturation output section active layer waveguide 18;
the passive layer waveguide 3 includes in the longitudinal direction: a high gain section passive waveguide 301, a transition section passive waveguide 302, and a high saturation output section passive waveguide 303;
the width of the high gain section active layer waveguide 16 is 2-4 μm, the length is 1000-2500 μm, the width of the high saturation output section active layer waveguide 18 is 4-8 μm, the length is 500-2000 μm, the width of the graded section active layer waveguide 17 input end waveguide is the same as the high gain section active layer waveguide 16, the width of the graded section active layer waveguide 17 output end waveguide is the same as the high saturation output end active layer waveguide 18, and the length of the graded section active layer waveguide 17 is 100-500 μm.
In this solution, for the high saturation output section 15, in order to increase the saturation output optical power, the widening of the active area waveguide will cause the optical field confinement factor to increase, which is rather disadvantageous for increasing the saturation output optical power, and adding an passive waveguide layer can solve this problem. For the high gain section 13, a narrower active region waveguide can have a larger carrier density, resulting in a larger gain, while the optical field confinement factor will be reduced, but this problem is solved by reducing the loss and increasing the high gain section length.
The width of the active layer waveguide 18 of the high saturation output end section is 4-8 μm, the length is 500-2000 μm, as shown in fig. 4b, due to the existence of the passive layer waveguide 3 below the quantum well active layer, the light field is shifted to the passive layer waveguide 3 below, although the width of the active region waveguide is increased, the cross section area A of the active region is increased, the light field limiting factor is still kept low, and the saturated light power output can be effectively increased; under the influence of the passive layer waveguide 3, the width of the quantum well active layer waveguide is increased, so that a high-order transverse mode is less likely to appear, and the semiconductor optical amplifier obtains higher saturated output optical power in a basic mode working state; meanwhile, in order to obtain smaller carrier life, the length of the high saturation output end section is shorter than that of the high gain section.
As shown in fig. 2 and 3, the graded segment 14 is located between the high gain segment 13 and the high saturation output segment 15, the length is 100-500 μm, the width of the graded active layer waveguide 17 is gradually changed from being consistent with that of the high gain segment active layer waveguide 16 to being consistent with that of the high saturation output segment active layer waveguide 18, the optical field is gradually changed from fig. 4a to fig. 4b when the optical field is transmitted in the graded segment, the graded segment 14 has the effect of avoiding that the effective refractive index is different between the high gain segment active layer waveguide 16 and the high saturation output segment 18 due to the different waveguide widths, and the refractive index between the two ends is suddenly changed, so that the existing intracavity reflection is caused, and the reflection can degrade the performance of the semiconductor optical amplifier.
In some embodiments, the high gain section active layer waveguide 16, the graded section active layer waveguide 17 and the high saturation output section active layer waveguide 18 are the same thickness, and the high gain section passive waveguide 301, the graded section passive waveguide 302 and the high saturation output section passive waveguide 303 are the same thickness.
Specifically, the thicknesses of the high-gain section active layer waveguide 16, the graded section active layer waveguide 17 and the high-saturation output section active layer waveguide 18 are consistent and are in the same plane; the high gain section passive waveguide 301, the graded section passive waveguide 302 and the high saturation output section passive waveguide 303 are identical in material thickness and are in the same plane.
In some embodiments, the passive layer waveguide 3 has a thickness of 150-400 nm.
Specifically, the thicknesses of the high gain section passive waveguide 301, the graded section passive waveguide 302 and the high saturation output section passive waveguide 303 are all 150-400 nm.
In some embodiments, the active layer waveguide and the passive layer waveguide 3 are spaced apart by 0.5 to 1.5 μm in the thickness direction.
Specifically, the interval between the high gain section active layer waveguide 16 and the high gain section passive waveguide 301 is 0.5-1.5 μm, the interval between the graded section active layer waveguide 17 and the graded section passive waveguide 302 is 0.5-1.5 μm, and the interval between the high saturation output section active layer waveguide 18 and the high saturation output section passive waveguide 303 is 0.5-1.5 μm.
The thickness of the passive layer waveguide 3 is 150-400 nm, and the interval is 0.5-1.5 μm, which is considered according to the optical field distribution of the drop-down as required, and is related to the thickness, refractive index and interval design of the active layer waveguide, the drop-down degree of the light spot changes along with the thickness and interval of the passive layer waveguide 3, and the optical field limiting factor also changes. The current design results show that the thickness of the passive layer waveguide 3 is 150-400 nm and the interval is 0.5-1.5 mu m, so that good results can be obtained.
In some embodiments, the active layer waveguide has an angle of 6-10 ° with respect to the semiconductor amplifier end face normal.
Specifically, the included angle between the waveguide formed by the high-gain section active layer waveguide 16, the graded section active region waveguide 17 and the high-saturation output section active layer waveguide 18 and the normal line of the end face of the semiconductor optical amplifier chip is theta, and the theta is set to be 6-10 degrees, so that the reflectivity of the end face is further reduced, and gain ripple caused by the reflection of the end face is reduced.
In some embodiments, the quantum well layer 11 is an InGaAsP or AlGaInAs multi-quantum well material, and the first waveguide layer 10 and the second waveguide layer 12 are graded index layers.
Specifically, for designing a communication band SOA chip, the band gap of InGaAsP or AlGaInAs multiple quantum well materials can provide gain in this band; the first waveguide layer 10 and the second waveguide layer 12 are graded index layers, which on the one hand provide optical field confinement and on the other hand avoid excessive band-step blocking carrier transport.
In some embodiments, the passive layer waveguide 3 is an InGaAsP material with a material bandgap of 1.0PQ to 1.2PQ.
Specifically, the passive layer waveguide 3 is made of InGaAsP material, and the band gap of the material is 1.0 PQ-1.2 PQ, so that on one hand, the refractive index is large enough, and is larger than InP, on the other hand, the band gap is larger than the band gap of the active layer quantum well, and the absorption loss is reduced.
In some embodiments, the end surfaces of the high gain section 13 and the high saturation output section 15 are both coated with an antireflection film, and the reflectivity of the antireflection film is less than or equal to 0.5%.
Specifically, the end face of the high gain section 13 is plated with the first antireflection film 19, the end face of the high saturation output section 15 is plated with the second antireflection film 20, the reflectivities of the first antireflection film 19 and the second antireflection film 20 are both smaller than 0.5%, the reflectivity of the end face can be reduced, and gain ripples caused by the reflection of the end face can be reduced.
Example 1A semiconductor optical amplifier and a method of manufacturing the same
As shown in fig. 1 to 3, the semiconductor optical amplifier includes, in a thickness direction: a substrate 1, a buffer layer 2, a passive layer waveguide 3, an n-InP cap layer 4, a P-InP spacer layer 5, an n-InP spacer layer 6, a P-InP cap layer 7, an electrode contact layer 8, a P-type electrode layer 9, a first waveguide layer 10, a quantum well layer 11, and a second waveguide layer 12;
the first waveguide layer 10, the quantum well layer 11 and the second waveguide layer 12 are active layer waveguides, the two sides of the first waveguide layer 10, the quantum well layer 11 and the second waveguide layer 12 are n-InP cover layers 4, p-InP spacing layers 5 and n-InP spacing layers 6 to form an n-p-n structure, the quantum well layer 11 is of a 5-pair InGaAsP multi-quantum well structure, the passive layer waveguide 3 is an InGaAsP waveguide, the band gap of the passive layer waveguide is 1.05PQ, the waveguide thickness is 350 μm, and the interval between the passive layer waveguide and the quantum well active layer is 1.2 μm.
The semiconductor optical amplifier includes in a length direction: the high-gain section 13 is the semiconductor optical amplifier input end, the gradual change section 14 connects the high-gain section 13 and the high-saturation output section 15, and the high-saturation output section 15 is the semiconductor optical amplifier output end. The length of the high gain section 13 is 1800 mu m, the length of the gradual change section 14 is 200 mu m, and the length of the high saturation output section is 1000 mu m; the high gain section waveguide 16 has a width of 3 μm, the transition section waveguide has a width of 3.fwdarw.6 μm (transition from 3 μm to 6 μm), and the high saturation output section waveguide has a width of 6 μm.
The length of the high gain section 13 is longer, a plurality of pairs of quantum wells provide higher gain, meanwhile, the optical field transmission loss is smaller, and larger gain can be provided in the high gain section 13; the high saturation output section 15 has larger active layer waveguide sectional area and smaller optical field limiting factor, and can obtain larger saturation output optical power.
The manufacturing method of the semiconductor optical amplifier comprises the following steps:
s1, sequentially growing a buffer layer 2, a passive layer waveguide 3, an N-type InP cover layer 4, a first waveguide layer 12, a quantum well layer 11, a second waveguide layer 10 and a P-InP cover layer 7 on an InP substrate 1;
s2, growing SiO 2 Photoetching and manufacturing masks of the high-gain section active layer waveguide 16, the graded section active layer waveguide 17 and the high-saturation output section active layer waveguide 18;
s3, etching and Br utilizing RIE 2 ：HBr：H 2 O 2 Etching to manufacture a high-gain section active layer waveguide 16, a graded section active layer waveguide 17 and a high-saturation output section active layer waveguide 18 by using an etching solution with a etching depth of 1.4-1.6 mu m, wherein the etching solution is 1.2:100:400;
s4, cleaning the corroded wafer, sequentially growing the p-InP spacer layer 5, the n-InP spacer layer 6 and the p-InP cover layer 7 by MOCVD until the corrosion area is flat, and then removing SiO 2 A mask, wherein the p-InP cover layer 7 and the electrode contact layer 8 are continuously grown in sequence;
s5, growing SiO 2 A mask passivation layer for manufacturing a window and a cleavage area by photoetching;
s6, manufacturing an electrode, cleaving and coating.
The semiconductor optical amplifier in the embodiment of the application adopts a segmented structure, the high gain section 13 is utilized to provide higher gain, the high saturation output section 15 is utilized to provide high saturation output optical power, the gradual change section 14 realizes the connection between the two sections, the optical amplification transmission direction is input from the end face of the high gain section 13, is transmitted to the high saturation output section 15 through the gradual change section 14, and is output through the end face of the high saturation output section 15. The N-type layer is added with an passive waveguide layer, the optical field in the quantum well active layer is pulled downwards, the overlapping of the optical field and the P-type layer is reduced, the optical field transmission loss is reduced, and meanwhile, the optical field limiting factor of a high-saturation output section is reduced, so that the semiconductor optical amplifier provided by the application can realize larger gain and improve the saturated output optical power. The semiconductor optical amplifier provided by the application adopts the buried heterojunction structure, and the manufacturing method is consistent with that of the common buried heterojunction structure, and the process is simple.
It will be readily appreciated by those skilled in the art that the above advantageous ways can be freely combined and superimposed without conflict. The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application. The foregoing is merely a preferred embodiment of the present application, and it should be noted that it will be apparent to those skilled in the art that modifications and variations can be made without departing from the technical principles of the present application, and these modifications and variations should also be regarded as the scope of the application.
Claims (10)
1. A semiconductor optical amplifier, characterized by comprising in a thickness direction:
the active layer waveguide, two sides are n-p-n doped waveguides, including the first waveguide layer (10), quantum well layer (11) and second waveguide layer (12) that set up sequentially;
-a passive layer waveguide (3) located below the active layer waveguide and the n-p-n doped waveguide.
2. A semiconductor optical amplifier according to claim 1, wherein,
the semiconductor optical amplifier in the length direction includes: the high-gain section (13), a gradual change section (14) and a high-saturation output section (15), wherein the high-gain section (13) is the input end of the semiconductor optical amplifier, the gradual change section (14) is connected with the high-gain section (13) and the high-saturation output section (15), and the high-saturation output section (15) is the output end of the semiconductor optical amplifier;
the active layer waveguide includes in a length direction: a high gain section active layer waveguide (16), a graded section active layer waveguide (17) and a high saturation output section active layer waveguide (18);
the passive layer waveguide (3) includes in the length direction: a high gain section passive waveguide (301), a transition section passive waveguide (302) and a high saturation output section passive waveguide (303);
the width of the high-gain section active layer waveguide (16) is 2-4 mu m, the length of the high-saturation output section active layer waveguide (18) is 1000-2500 mu m, the width of the high-saturation output section active layer waveguide (18) is 4-8 mu m, the length of the high-gain section active layer waveguide (16) is 500-2000 mu m, the width of the graded section active layer waveguide (17) input end waveguide is the same as that of the high-gain section active layer waveguide (16), the width of the graded section active layer waveguide (17) output end waveguide is the same as that of the high-saturation output end active layer waveguide (18), and the length of the graded section active layer waveguide (17) is 100-500 mu m.
3. The semiconductor optical amplifier according to claim 2, wherein the high gain section active layer waveguide (16), the graded section active layer waveguide (17) and the high saturation output section active layer waveguide (18) are identical in thickness, and the high gain section passive waveguide (301), the graded section passive waveguide (302) and the high saturation output section passive waveguide (303) are identical in material thickness.
4. A semiconductor optical amplifier according to claim 1, characterized in that the passive layer waveguide (3) has a thickness of 150-400 nm.
5. A semiconductor optical amplifier according to claim 1, characterized in that the active layer waveguide and the passive layer waveguide (3) are spaced apart by 0.5-1.5 μm in the thickness direction.
6. A semiconductor optical amplifier according to claim 1, wherein the active layer waveguide is angled between 6 ° and 10 ° from the normal to the semiconductor amplifier end face.
7. A semiconductor optical amplifier according to claim 1, characterized in that the quantum well layer (11) is an InGaAsP or AlGaInAs multi-quantum well layer, and the first and second waveguide layers (10, 12) are graded index layers.
8. The semiconductor optical amplifier according to claim 1, wherein the passive layer waveguide (3) is an InGaAsP material having a material bandgap of 1.0PQ to 1.2PQ.
9. The semiconductor optical amplifier according to claim 2, wherein the end surfaces of the high gain section (13) and the high saturation output section (15) are coated with an antireflection film, and the reflectance of the antireflection film is less than or equal to 0.5%.
10. The method for manufacturing a semiconductor optical amplifier according to any one of claims 1 to 9, comprising:
s1, sequentially growing a buffer layer (2), a passive layer waveguide (3), an N-type InP cover layer (4), a first waveguide layer (12), a quantum well layer (11), a second waveguide layer (10) and a P-InP cover layer (7) on an InP substrate (1);
s2, growing SiO 2 Photoetching and manufacturing masks of a high-gain section active layer waveguide (16), a transition section active layer waveguide (17) and a high-saturation output section active layer waveguide (18);
s3, etching and Br utilizing RIE 2 ：HBr：H 2 O 2 Etching to manufacture a high-gain section active layer waveguide (16), a graded section active layer waveguide (17) and a high-saturation output section active layer waveguide (18) by using an etching solution with the etching depth of 1.4-1.6 mu m;
s4, cleaning the corroded wafer, sequentially growing a p-InP spacer layer (5), an n-InP spacer layer (6) and a p-InP cover layer (7) by MOCVD until the corrosion area is flat, and then removing SiO 2 A mask, and a p-InP cover layer (7) and an electrode contact layer (8) are continuously grown in sequence;
s5, growing SiO 2 A mask passivation layer for manufacturing a window and a cleavage area by photoetching;
s6, manufacturing an electrode, cleaving and coating.
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| CN (1) | CN117117635A (en) |
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2023
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