CN117096835A - TWS charging bin input overvoltage protection control practical circuit - Google Patents
TWS charging bin input overvoltage protection control practical circuit Download PDFInfo
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- CN117096835A CN117096835A CN202311081258.4A CN202311081258A CN117096835A CN 117096835 A CN117096835 A CN 117096835A CN 202311081258 A CN202311081258 A CN 202311081258A CN 117096835 A CN117096835 A CN 117096835A
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- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 238000013461 design Methods 0.000 abstract description 11
- 238000012827 research and development Methods 0.000 abstract description 5
- 230000002860 competitive effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The application discloses a TWS charging bin input overvoltage protection control practical circuit which comprises a USB, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R7, a MOS tube Q1, a triode Q2, a MOS tube Q3 and a capacitor C4. The application uses the input overvoltage protection circuit built by the analog circuit to replace the direct use of the overvoltage protection integrated IC, and the input overvoltage protection circuit of the separated components has low research and development cost and simple circuit design, and creates more competitive products for terminal customers; the design cost of the proposal is very low, the input voltage range is wide, and the electric equipment at the rear electrode is protected from being damaged under the condition that high voltage is connected by human error or external input voltage is unstable, so that the output voltage is limited in the range of a safety value, and the safety and the reliability of the product are ensured.
Description
Technical Field
The application relates to the technical field of wireless headphones, in particular to a TWS charging bin input overvoltage protection control practical circuit.
Background
With the rapid development of communication technology, wireless earphone is becoming more popular, bringing great convenience to life, work and study of people. Existing wireless headsets typically use a built-in rechargeable battery as a power source. In order to ensure the normal use of the wireless earphone, the rechargeable battery in the wireless earphone needs to be charged, for example, when a user does not use the wireless earphone, the wireless earphone is put into a charging box of the wireless earphone for charging. When the wireless earphone is placed in the charging box, if the voltage of the charging box for charging the wireless earphone reaches a preset charging voltage, such as 5V, the wireless earphone can be automatically powered off based on the charging voltage provided by the charging box and enters a charging state. When the charging box charges the wireless earphone, the charging box needs to detect whether an overcurrent and a short circuit occur in a circuit for charging the wireless earphone, namely, whether the overcurrent and the short circuit occur in output or not is detected, and the charging of the wireless earphone is stopped when the overcurrent or the short circuit occurs, so that the overcurrent protection function is realized.
Aiming at the current consumer electronic market, the power supply part is important for most of electronic products, and good power supply protection is more indispensable, so that the follow-up important circuits and components can be protected from being damaged by external overvoltage. Meanwhile, based on TWS markets at home and abroad, a charging bin, a lithium battery charging and discharging management unit, a charging part and an input overvoltage protection circuit are used for charging the wireless earphone, and almost all the charging bin, the lithium battery charging and discharging management unit, the charging part and the input overvoltage protection circuit are integrated ICs (integrated circuits) for special overvoltage protection, so that the change of external input voltage is achieved, the charging end always maintains about 5v of charging voltage, and the charging chip is further protected, so that the lithium battery management chip cannot be damaged due to overhigh input voltage. However, the cost of the overvoltage protection integrated IC is high, the IC device is not easy to purchase, and the market price fluctuation is large.
For the problems in the related art, no effective solution has been proposed at present.
Disclosure of Invention
Aiming at the problems in the related art, the application provides a TWS charging bin input overvoltage protection control practical circuit to overcome the technical problems existing in the related art.
For this purpose, the application adopts the following specific technical scheme:
the utility model provides a TWS charge storehouse input overvoltage protection control practical circuit, includes USB, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R7, MOS pipe Q1, triode Q2, MOS pipe Q3 and electric capacity C4;
the first end and the sixth end of the USB are grounded, the third end of the USB is connected with one end of a resistor R1, the other end of the resistor R1 is grounded, the fourth end of the USB is connected with one end of a resistor R2, the other end of the resistor R2 is grounded, the second end of the USB is sequentially connected with the fifth end of the USB, one end of a resistor R3, one end of a resistor R5, one end of a resistor R7 and a source electrode of a MOS transistor Q3, the other end of the resistor R3 is sequentially connected with one end of a capacitor C4, one end of the resistor R4 and a gate electrode of the MOS transistor Q1, the other end of the capacitor C4 is grounded, the other end of the resistor R4 is connected with a source electrode of the MOS transistor Q1 and grounded, a drain electrode of the MOS transistor Q1 is sequentially connected with the other end of the resistor R5 and the third end of the transistor Q2, the second end of the transistor Q2 is grounded, the other end of the transistor Q2 is sequentially connected with the drain electrode of the transistor Q3 and the drain electrode of the transistor Q3, and the drain electrode of the transistor Q3 is sequentially connected with the drain electrode of the transistor Q3.
Further, the MOS transistor Q1 is a voltage type N-MOS transistor, and the MOS transistor Q3 is a voltage type P-MOS transistor.
Further, the Vgs on voltage of the MOS transistor Q1 is:
Vgs＝R4/(R3+R4)*6V
wherein R4 is the resistance value of the resistor R4, and R3 is the resistance value of the resistor R3.
Further, if the Vgs on voltage of the MOS transistor Q1 is greater than the threshold, the MOS transistor Q1 is turned on.
Further, the USB is a Type c USB interface.
Further, the resistor R1 and the resistor R2 are both forward and reverse charging identification resistors.
Further, the resistor R3 is an upper bias voltage dividing resistor, and the resistor R4 is a lower bias voltage dividing resistor.
Further, the capacitor C4 is a bypass capacitor.
Further, the resistor R5 and the resistor R7 are pull-up resistors.
Further, the triode Q2 is a current-type NPN transistor.
The beneficial effects of the application are as follows:
(1) The application provides an input overvoltage protection scheme for a product research and development end, under the condition that the price of a chip is increased increasingly, an input overvoltage protection circuit built by an analog circuit is used for replacing an integrated IC (integrated circuit) for overvoltage protection, and the input overvoltage protection circuit for separating components is low in research and development cost and simple in circuit design, so that a more competitive product is created for terminal customers.
(2) The application aims at the design cost of the proposal with extremely low requirements of ODM manufacturers, has wide input voltage range, prevents the post-electrode electric equipment from being damaged under the condition of manual mistaken access to high voltage or unstable external input voltage, limits the output voltage within the range of safety values, and ensures the safety and reliability of products.
(3) The application saves the development time of the product and reduces the cost of the whole product, the circuit of the application uses the separation components, builds the input overvoltage protection control practical circuit, the electronic components adopted in the circuit are easy to purchase and are not influenced by the lack of stock, the application strives for the time of the product to be on the market for the end user, and improves the competitiveness of the product; the product is safe, the performance is reliable, and the design scheme cost is low; the product has low power consumption, simple circuit design and good stability.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a circuit diagram of a TWS charging bin input overvoltage protection control utility circuit according to an embodiment of the application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
For the purpose of further illustrating the various embodiments, the present application provides the accompanying drawings, which are a part of the disclosure of the present application, and which are mainly used to illustrate the embodiments and, together with the description, serve to explain the principles of the embodiments, and with reference to these descriptions, one skilled in the art will recognize other possible implementations and advantages of the present application, wherein elements are not drawn to scale, and like reference numerals are generally used to designate like elements.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the application only and is not intended to be limiting of the application.
According to an embodiment of the application, a TWS charging bin input overvoltage protection control practical circuit is provided.
Referring to the drawings and the specific embodiments, as shown in fig. 1, the TWS charging bin input overvoltage protection control practical circuit according to the embodiment of the application includes a USB, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R7, a MOS transistor Q1, a triode Q2, a MOS transistor Q3, and a capacitor C4;
the first end and the sixth end of the USB are grounded, the third end of the USB is connected with one end of a resistor R1, the other end of the resistor R1 is grounded, the fourth end of the USB is connected with one end of a resistor R2, the other end of the resistor R2 is grounded, the second end of the USB is sequentially connected with the fifth end of the USB, one end of a resistor R3, one end of a resistor R5, one end of a resistor R7 and a source electrode of a MOS transistor Q3, the other end of the resistor R3 is sequentially connected with one end of a capacitor C4, one end of the resistor R4 and a gate electrode of the MOS transistor Q1, the other end of the capacitor C4 is grounded, the other end of the resistor R4 is connected with a source electrode of the MOS transistor Q1 and grounded, a drain electrode of the MOS transistor Q1 is sequentially connected with the other end of the resistor R5 and the third end of the transistor Q2, the second end of the transistor Q2 is grounded, the other end of the transistor Q2 is sequentially connected with the drain electrode of the transistor Q3 and the drain electrode of the transistor Q3, and the drain electrode of the transistor Q3 is sequentially connected with the drain electrode of the transistor Q3.
In a further embodiment, the MOS transistor Q1 is a voltage type N-MOS transistor, and the MOS transistor Q3 is a voltage type P-MOS transistor.
It should be noted that the N-MOS tube and the P-MOS tube are two common Metal Oxide Semiconductor (MOS) conductive tubes, and their working principles are as follows:
the N-MOS transistor uses an N-type semiconductor (e.g., phosphorus doped silicon) as the conductive channel. When the gate voltage Vgs is greater than the threshold voltage Vth, the N-MOS transistor is conducted; when Vgs is smaller than Vth, the N-MOS tube is cut off. The working principle of the N-MOS tube is as follows: when a positive gate voltage is applied, an inversion channel (electron enrichment) is formed, allowing electrons to flow from the source to the drain, and the N-MOS transistor is turned on.
The P-MOS transistor uses a P-type semiconductor (e.g., boron doped silicon) as the conductive channel. When the gate voltage Vgs is smaller than the threshold voltage Vth, the P-MOS transistor is conducted; when Vgs is larger than Vth, the P-MOS tube is cut off. The working principle of the P-MOS tube is as follows: when negative gate voltage is applied, a positive channel (hole enrichment) is formed, holes are allowed to flow from the source to the drain, and the P-MOS transistor is turned on.
Vgs > Vth when the N-MOS transistor is conducted, and an N-type semiconductor channel is used; and Vgs < Vth when the P-MOS transistor is conducted, and a P-type semiconductor channel is used. The channel materials and the conduction conditions of the two are opposite, which is the key difference between the N-MOS transistor and the P-MOS transistor. But they all use MOS structures to control the formation of the channel, implementing the function of an electronic switch.
In a further embodiment, the Vgs on voltage of the MOS transistor Q1 is:
Vgs＝R4/(R3+R4)*6V
wherein R4 is the resistance value of the resistor R4, and R3 is the resistance value of the resistor R3.
In a further embodiment, if the Vgs on voltage of the MOS transistor Q1 is greater than the threshold, the MOS transistor Q1 is turned on.
In a further embodiment, the USB is a Type c USB interface. The Type c usb interface can be reversibly plugged and unplugged, so that the male and female interfaces are not distinguished, and the use is more convenient. And the Type c usb interface adopts a firmer 24-needle metal joint design, so that the service life is longer.
In a further embodiment, the resistor R1 and the resistor R2 are both forward and reverse charge identification resistors.
In a further embodiment, the resistor R3 is an upper bias voltage divider resistor, and the resistor R4 is a lower bias voltage divider resistor.
In a further embodiment, the capacitor C4 is a bypass capacitor.
In a further embodiment, the resistor R5 and the resistor R7 are pull-up resistors.
In a further embodiment, the transistor Q2 is a current-mode NPN transistor.
In order to facilitate understanding of the above technical solutions of the present application, the following describes in detail the working principle or operation manner of the present application in the actual process.
In practical application, the specific circuit analysis: the external power adapter input voltage is connected by a Type c usb wire, the input voltage passes through an identification resistor R1 and a resistor R2 to realize positive and negative insertion of the Type c wire, and can provide electric energy for a later-stage circuit, namely Vinput, one path of the voltage is connected with an upper bias voltage dividing resistor R3 to provide Vgs conducting voltage for a voltage Type N-MOS tube Q1, the other path of the voltage is connected with a resistor R5 through a pull-up resistor to respectively provide electric level for the grid electrode of the voltage Type N-MOS tube Q1 and electric level for the base electrode of a current Type NPN transistor Q2, and the Vinput input voltage directly provides electric level for the voltage Type P-MOS tube Q3 and the source electrode. The other part Vinput provides a level to the collector of the triode Q2 and the control electrode of the MOS transistor Q3 through a pull-up resistor R7.
Assume that: the input overvoltage protection voltage of the TWS charging bin is 6v, namely when the input voltage of the external power adapter exceeds 6v, the TWS charging bin is charged and cut off, so that the TWS charging and discharging power management chip is better protected. So as to avoid burning out the chip due to over-high voltage. When vinput=6v, the voltage-type N-MOS transistor Q1, vgs turn on voltage, determined by the upper bias voltage-dividing resistor R3 and the lower bias voltage-dividing resistor R4, satisfies the N-MOS turn on condition and turns on, and according to the N-MOS transistor characteristics, vgs will turn on when larger than a certain value, and is suitable for the case (low-end driving) when the source is grounded, vgs turn on voltage is as follows:
vgs=r4/(r3+r4) ×6v, vgs >0, the parameters are typically set: r3=51k, r4=2.4k, c1=0.01 uf, and the capacitor C1 uses the capacitance characteristic: the voltage at two ends of the capacitor cannot be suddenly changed, so that the Vgs voltage is kept for a period of time, and the stable on or off state of the Q1 is ensured.
Vgs=2.4k/(51k+2.4k) ×6v=0.269v >0, Q1 is on.
Remarks: if the cut-off current of the MOS tube Q1 is large, the R4 resistor is regulated to be larger, otherwise, if the cut-off current of the MOS tube Q1 is small, the R4 resistor is regulated to be smaller.
(1) When Vinput is more than or equal to 6v, vgs=0.269V, the voltage type N-MOS transistor Q1 is conducted, the base level of the current type NPN transistor Q2 is pulled down, the base voltage VB 2=0V, the transistor Q2 is in a cut-off state, the voltage type P-MOS transistor Q3, the voltage of the control electrode g is higher than or equal to 6V, vg is approximately equal to 6V, the MOS transistor Q3 is in a cut-off state, the output voltage is stopped, and VOUTPUT is approximately equal to 0V, so that the purpose of overvoltage protection of 6V input is achieved.
(2) When Vinput <6V, vgs <0V, voltage type N-MOS transistor Q1 is turned off, there is a forward voltage drop at both ends of current type NPN transistor Q2, base level is provided by pull-up resistor R5, base voltage VB2 is approximately equal to 6V, current type NPN transistor Q2 is in on state, namely: vb is larger than ve+x, the range of x is approximately (0.1-0.7) V, the voltage type P-MOS tube Q3 controls the electrode g voltage, after the Vg voltage is conducted due to Q2, vg=0V, the Vg 3 is in an on-off state, and VOUTPUT is about Vinput, the voltage for charging is smaller than 6V, so that the normal operation of the TWS charging bin charging and discharging power supply chip is ensured.
The application has wider application range, such as: tablet computers, set top boxes, digital products, wearable devices, TWS and other consumer electronic products.
In summary, by means of the above technical scheme of the present application, the present application provides an input overvoltage protection scheme for a product research and development terminal, and under the condition that the price of a chip is increasing, an input overvoltage protection circuit built by an analog circuit is used to replace a direct use of an overvoltage protection integrated IC, and a separate component is used to input the overvoltage protection circuit, so that the research and development cost is low, the circuit design is very simple, and a more competitive product is created for a terminal customer. The application aims at the design cost of the proposal with extremely low requirements of ODM manufacturers, has wide input voltage range, prevents the post-electrode electric equipment from being damaged under the condition of manual mistaken access to high voltage or unstable external input voltage, limits the output voltage within the range of safety values, and ensures the safety and reliability of products. The application saves the development time of the product and reduces the cost of the whole product, the circuit of the application uses the separation components, builds the input overvoltage protection control practical circuit, the electronic components adopted in the circuit are easy to purchase and are not influenced by the lack of stock, the application strives for the time of the product to be on the market for the end user, and improves the competitiveness of the product; the product is safe, the performance is reliable, and the design scheme cost is low; the product has low power consumption, simple circuit design and good stability.
The terms "first," "second," "third," "fourth," and the like in the description of the application and in the above figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the application.
Claims (10)
1. The TWS charging bin input overvoltage protection control practical circuit is characterized by comprising a USB, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R7, a MOS tube Q1, a triode Q2, a MOS tube Q3 and a capacitor C4;
the first end and the sixth end of the USB are grounded, the third end of the USB is connected with one end of a resistor R1, the other end of the resistor R1 is grounded, the fourth end of the USB is connected with one end of a resistor R2, the other end of the resistor R2 is grounded, the second end of the USB is sequentially connected with the fifth end of the USB, one end of a resistor R3, one end of a resistor R5, one end of a resistor R7 and a source electrode of a MOS transistor Q3, the other end of the resistor R3 is sequentially connected with one end of a capacitor C4, one end of the resistor R4 and a gate electrode of the MOS transistor Q1, the other end of the capacitor C4 is grounded, the other end of the resistor R4 is connected with a source electrode of the MOS transistor Q1 and grounded, a drain electrode of the MOS transistor Q1 is sequentially connected with the other end of the resistor R5 and the third end of the transistor Q2, the second end of the transistor Q2 is grounded, the other end of the transistor Q2 is sequentially connected with the drain electrode of the transistor Q3 and the drain electrode of the transistor Q3, and the drain electrode of the transistor Q3 is sequentially connected with the drain electrode of the transistor Q3.
2. The TWS charging bin input overvoltage protection control practical circuit according to claim 1, wherein the MOS tube Q1 is a voltage type N-MOS tube, and the MOS tube Q3 is a voltage type P-MOS tube.
3. The utility circuit for input overvoltage protection control of TWS charging bin according to claim 2, wherein the Vgs on voltage of the MOS transistor Q1 is:
Vgs＝R4/(R3+R4)*6V
wherein R4 is the resistance value of the resistor R4, and R3 is the resistance value of the resistor R3.
4. The TWS charging bin input overvoltage protection control practical circuit according to claim 3, wherein the MOS transistor Q1 is turned on if the Vgs turn-on voltage of the MOS transistor Q1 is greater than a threshold.
5. The TWS charging bin input overvoltage protection control practical circuit of claim 1, wherein the USB is a Type c USB interface.
6. The TWS charging bin input overvoltage protection control practical circuit according to claim 1, wherein the resistor R1 and the resistor R2 are both forward and reverse charging identification resistors.
7. The TWS charging bin input overvoltage protection control practical circuit of claim 1, wherein the resistor R3 is an upper bias voltage divider resistor, and the resistor R4 is a lower bias voltage divider resistor.
8. The TWS charging bin input overvoltage protection control utility circuit of claim 1, wherein the capacitor C4 is a bypass capacitor.
9. The TWS charging bin input overvoltage protection control practical circuit according to claim 1, wherein the resistor R5 and the resistor R7 are pull-up resistors.
10. The TWS charging bin input overvoltage protection control practical circuit of claim 1, wherein the triode Q2 is a current type NPN transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311081258.4A CN117096835A (en) | 2023-08-25 | 2023-08-25 | TWS charging bin input overvoltage protection control practical circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311081258.4A CN117096835A (en) | 2023-08-25 | 2023-08-25 | TWS charging bin input overvoltage protection control practical circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117096835A true CN117096835A (en) | 2023-11-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311081258.4A Pending CN117096835A (en) | 2023-08-25 | 2023-08-25 | TWS charging bin input overvoltage protection control practical circuit |
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| Country | Link |
|---|---|
| CN (1) | CN117096835A (en) |
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2023
- 2023-08-25 CN CN202311081258.4A patent/CN117096835A/en active Pending
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