CN117096238B - Composite substrate, preparation method thereof and LED chip - Google Patents
Composite substrate, preparation method thereof and LED chip Download PDFInfo
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- CN117096238B CN117096238B CN202311347054.0A CN202311347054A CN117096238B CN 117096238 B CN117096238 B CN 117096238B CN 202311347054 A CN202311347054 A CN 202311347054A CN 117096238 B CN117096238 B CN 117096238B
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- 239000000758 substrate Substances 0.000 title claims abstract description 152
- 239000002131 composite material Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 230000000737 periodic effect Effects 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000733322 Platea Species 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention provides a composite substrate, a preparation method thereof and an LED chip, wherein the composite substrate comprises a first patterned substrate, a reflecting layer, a bonding layer and a second patterned substrate which are sequentially laminated on the first patterned substrate; the thickness of the first patterned substrate is smaller than that of the second patterned substrate, the first patterns on the first patterned substrate are periodic patterns, the height of each first pattern in the periodic patterns is 4-10 mu m, and the width of each first pattern is 1-4 mu m. The invention solves the problems in the prior art that the light angle of the chip is small and the side surface light is not bright enough due to the limitation of the substrate, so that most of light is gathered in the center of the chip and the light intensity of the center of the chip is too strong.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a composite substrate, a preparation method thereof and an LED chip.
Background
At present, backlight sources for mobile phones are all LED chips, and are divided into two types, namely a side-in type backlight source and a direct type backlight source. Direct type brightness is higher and resolution is higher, which is a trend in the future, and LED large light angle chips are one of the most important technologies. The LED large light angle chip has 2 benefits when used in a mobile phone backlight source, firstly, the use amount of the chip can be reduced, and the cost is reduced; second, the central light intensity of the chip can be reduced, so that the whole screen looks more uniform in brightness and softer. The common technical scheme is POB scheme, namely, a forward chip is packaged in a packaging body to be made into a lamp bead which is used for a mobile phone backlight source.
The normal LED chip used by the conventional backlight consists of a reflecting layer, a substrate PSS, an epitaxial layer and a chip layer. The epitaxial layer is composed of an N-type semiconductor, a quantum well and a P-type semiconductor. The reflecting layer is used for reflecting light to make the light output from the surface of the chip layer and the side surface of the chip layer.
However, in the current LED front-mounted chip, the light angle is increased by emitting light from the side of the chip, but since the bottom of the substrate is flat, only the incident light exceeding a certain angle is irradiated to the reflecting mirror of the substrate to be re-reflected, and then the light is emitted from the side of the chip, the light angle of the chip is small, and the side light is not bright enough, so that most of the light is concentrated in the center of the chip, and the light intensity of the center of the chip is too strong.
Disclosure of Invention
Based on the above, the invention aims to provide a composite substrate, a preparation method thereof and an LED chip, and aims to solve the problems that in the prior art, the light angle of the chip is small due to the limitation of the substrate, and the side surface light is not bright enough, so that most of light is concentrated in the center of the chip, and the light intensity of the center of the chip is too strong.
The embodiment of the invention is realized as follows:
in one aspect, the invention provides a composite substrate, which comprises a first patterned substrate, a reflecting layer, a bonding layer and a second patterned substrate, wherein the reflecting layer, the bonding layer and the second patterned substrate are sequentially laminated on the first patterned substrate;
the thickness of the first patterned substrate is smaller than that of the second patterned substrate, the first patterns on the first patterned substrate are periodic patterns, the height of each first pattern in the periodic patterns is 4-10 mu m, and the width of each first pattern is 1-4 mu m.
Further, the composite substrate is characterized in that the distance between two adjacent first patterns is 0.5 mu m-4 mu m.
Further, the composite substrate is characterized in that the second patterns on the second patterned substrate are periodic patterns, the height of each second pattern in the periodic patterns is 1 [ mu ] m-2 [ mu ] m, the width is 2 [ mu ] m-3 [ mu ] m, and the distance between two adjacent second patterns is 0.1 [ mu ] m-5 [ mu ] m.
Further, the thickness of the first patterned substrate is 150-200 mu m; the thickness of the second patterned substrate is 400 mu m-550 mu m.
Further, the composite substrate comprises the reflective layers comprising SiO alternately laminated 2 Layer and TiO 2 A layer.
Further, the thickness of the reflecting layer of the composite substrate is 1 mu m-6 mu m.
Further, in the composite substrate, the thickness of the bonding layer is greater than the thickness of the first patterned substrate, and the bonding layer exceeds the height 2 [ mu ] m-5 [ mu ] m of the first pattern of the first patterned substrate.
Further, the thickness of the composite substrate is 600-700 mu m.
In another aspect, the present invention provides a method for preparing a composite substrate, for preparing the composite substrate, the method comprising:
providing a first patterned substrate and a second patterned substrate respectively;
coating a film on the first patterned substrate to obtain a reflecting layer, and polishing after coating the film on the reflecting layer to form a bonding layer on the reflecting layer;
and bonding the first patterned substrate and the second patterned substrate through the bonding layer to obtain a composite substrate.
In yet another aspect, the present invention provides an LED chip, comprising a substrate, an epitaxial structure disposed on the substrate, and a chip structure;
wherein the substrate is any one of the composite substrates described above.
The invention sets the substrate as a first patterned substrate, and a composite substrate composed of a reflecting layer, a bonding layer and a second patterned substrate which are sequentially laminated on the first patterned substrate; and, set up the thickness of first graphic substrate less than the thickness of second graphic substrate, the figure on the first graphic substrate is periodic pattern, the height of every figure in the periodic pattern is 4 mu m ~10 mu m, width is 1 mu m ~4 mu m, thereby obtain high aspect ratio's figure and reflection stratum, wherein, high aspect ratio's figure and reflection stratum are more liable to take place the reflection of light, let light come out from the chip side, the angle of light of chip has been increased, the angle of light that leads to the chip because of the limitation of substrate in the prior art is little, and the side light-emitting is not bright enough, thereby the light is mostly gathered in the chip center, lead to the too strong problem of chip center light intensity.
Drawings
FIG. 1 is a schematic view of a composite substrate according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method of fabricating a composite substrate according to an embodiment of the invention.
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Aiming at the problems that in the prior art, the light angle of a chip is small due to the limitation of a substrate, and the side surface light is not bright enough, so that most of light is gathered in the center of the chip, and the light intensity of the center of the chip is too strong, the embodiment of the invention provides a composite substrate, a preparation method thereof and an LED chip.
Referring to fig. 1, a schematic structure of a composite substrate according to the present invention is shown, the composite substrate includes:
comprises a first patterned substrate 1, a reflecting layer 2, a bonding layer 3 and a second patterned substrate 4 which are sequentially laminated on the first patterned substrate 1;
the thickness of the first patterned substrate 1 is smaller than that of the second patterned substrate 4, the first patterns on the first patterned substrate 1 are periodic patterns, the height of each first pattern in the periodic patterns is 4 [ mu ] m-10 [ mu ] m, and the width is 1 [ mu ] m-4 [ mu ] m.
Specifically, as one of the embodiments of the present invention, the pattern on the patterned substrate is triangular, it can be understood that by setting the substrate as a composite substrate composed of a first patterned substrate 1, a reflective layer 2, a bonding layer 3 and a second patterned substrate 4 sequentially stacked on the first patterned substrate 1; the thickness of the first patterned substrate 1 is smaller than that of the second patterned substrate 4, the first patterns on the first patterned substrate 1 are periodic patterns, the height of each first pattern in the periodic patterns is 4 [ mu ] m-10 [ mu ] m, the width is 1 [ mu ] m-4 [ mu ] m, the patterns with large aspect ratio and the reflecting layer 2 are easy to reflect light, the light is led out from the side face of the chip, the light angle of the chip is increased, the light angle of the chip is prevented from being small, the side face light emitting is not bright enough, and the central light intensity of the chip is too strong.
More specifically, the total thickness of the composite substrate is 600-700 [ mu ] m, the thickness of the first patterned substrate 1 is 150-200 [ mu ] m, and the thickness of the second patterned substrate 4 is 400-550 [ mu ] m. The purpose is to increase the side light extraction. The distance between two adjacent first patterns is 0.5 mu m-4 mu m, the angle of the substrate is larger than 60 degrees, and the substrate is different from a conventional LED chip patterned substrate, so that the substrate PSS with large height-width ratio is manufactured, and light reflection is increased and light is emitted from the side face of the substrate.
In the embodiment of the present invention, the reflective layer 2 includes SiO alternately laminated 2 Layer and TiO 2 A layer of SiO 2 And TiO 2 The materials are overlapped, the thickness is 1 mu m-6 mu m, the reflectivity is larger than 98% in the wavelength range of 400 nm-600 nm, and the bonding layer 3 is SiO 2 、Al 2 O 3 The material, the thickness is greater than the pattern height on the first patterned substrate 1, the purpose is to fill up the first pattern on the first patterned substrate 1, for bonding with the second patterned substrate 4; the thickness of the bonding layer 3 exceeds the first pattern height 2 [ mu ] m-5 [ mu ] m on the first patterned substrate 1.
The side light emitting angles of the composite substrates under different aspect ratios are tested respectively, and are specifically shown in table 1:
TABLE 1
As is apparent from table 1, by improving the aspect ratio of the first pattern of the first patterned substrate, the side light-emitting angle of the composite substrate can be effectively increased, and as the aspect ratio increases, the side light-emitting angle of the composite substrate also increases.
In addition, the invention also provides a preparation method of the composite substrate, which is used for preparing the composite substrate and comprises the steps S10-S12.
Step S10, providing a first patterned substrate and a second patterned substrate respectively.
Wherein the patterned substrate can be prepared by providing a substrate, and by photolithography and ICP etching.
And S11, coating a film on the first patterned substrate to obtain a reflecting layer, and polishing after coating a film on the reflecting layer to form a bonding layer on the reflecting layer.
On the above structure, plateA film reflecting layer made of SiO 2 And TiO 2 Repeatedly superposing to obtain a first layer of SiO at the bottom 2 The uppermost layer is TiO 2 . Coating SiO on the reflecting layer by PECVD 2 And then polishing to form a bonding layer.
And step S12, bonding the first patterned substrate and the second patterned substrate through the bonding layer to obtain a composite substrate.
And the bonding layer is used for bonding the first patterned substrate and the second patterned substrate, so that a composite substrate is obtained.
In addition, the invention also provides an LED chip, which comprises a substrate, an epitaxial structure and a chip structure, wherein the epitaxial structure and the chip structure are arranged on the substrate;
wherein, the substrate is the composite substrate described in the above embodiment.
Specifically, as one of the embodiments of the present invention, the epitaxial structure may be an N-type semiconductor, a quantum well, or a P-type semiconductor, and the chip structure adopts a conventional structure, which is not described herein.
In summary, the composite substrate, the preparation method thereof and the LED chip provided by the embodiment of the invention are characterized in that the substrate is a composite substrate consisting of a first patterned substrate, a reflecting layer, a bonding layer and a second patterned substrate, wherein the reflecting layer, the bonding layer and the second patterned substrate are sequentially laminated on the first patterned substrate; and, set up the thickness of first graphic substrate less than the thickness of second graphic substrate, the figure on the first graphic substrate is periodic pattern, the height of every figure in the periodic pattern is 4 mu m ~10 mu m, width is 1 mu m ~4 mu m, thereby obtain high aspect ratio's figure and reflection stratum, wherein, high aspect ratio's figure and reflection stratum are more liable to take place the reflection of light, let light come out from the chip side, the angle of light of chip has been increased, the angle of light that leads to the chip because of the limitation of substrate in the prior art is little, and the side light-emitting is not bright enough, thereby the light is mostly gathered in the chip center, lead to the too strong problem of chip center light intensity.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (7)
1. The composite substrate is characterized by comprising a first patterned substrate, a reflecting layer, a bonding layer and a second patterned substrate, wherein the reflecting layer, the bonding layer and the second patterned substrate are sequentially laminated on the first patterned substrate;
the thickness of the first patterned substrate is smaller than that of the second patterned substrate, the thickness of the first patterned substrate is 150-200 mu m, the thickness of the second patterned substrate is 400-550 mu m, the first patterns on the first patterned substrate are periodic patterns, the height of each first pattern in the periodic patterns is 4-10 mu m, the width of each first pattern is 1-4 mu m, and the distance between every two adjacent first patterns is 0.5-4 mu m;
the second patterns on the second patterned substrate are periodic patterns, the height of each second pattern in the periodic patterns is 1 mu m-2 mu m, the width is 2 mu m-3 mu m, and the distance between two adjacent second patterns is 0.1 mu m-5 mu m.
2. The composite substrate of claim 1, wherein the reflective layer comprises alternately stacked SiO 2 Layer and TiO 2 A layer.
3. The composite substrate of claim 2, wherein the reflective layer has a thickness of 1-6 μm.
4. The composite substrate of claim 1, wherein the bonding layer has a thickness greater than a thickness of the first patterned substrate and the bonding layer exceeds a height of the first pattern of the first patterned substrate by 2 [ mu ] m to 5 [ mu ] m.
5. The composite substrate according to any one of claims 1 to 4, wherein the thickness of the composite substrate is 600-700 μm.
6. A method of preparing a composite substrate, for preparing the composite substrate of any one of claims 1 to 5, the method comprising:
providing a first patterned substrate and a second patterned substrate respectively;
coating a film on the first patterned substrate to obtain a reflecting layer, and polishing after coating the film on the reflecting layer to form a bonding layer on the reflecting layer;
and bonding the first patterned substrate and the second patterned substrate through the bonding layer to obtain a composite substrate.
7. An LED chip is characterized by comprising a substrate, an epitaxial structure and a chip structure, wherein the epitaxial structure and the chip structure are arranged on the substrate;
wherein the substrate is the composite substrate of any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311347054.0A CN117096238B (en) | 2023-10-18 | 2023-10-18 | Composite substrate, preparation method thereof and LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311347054.0A CN117096238B (en) | 2023-10-18 | 2023-10-18 | Composite substrate, preparation method thereof and LED chip |
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| CN117096238A CN117096238A (en) | 2023-11-21 |
| CN117096238B true CN117096238B (en) | 2024-04-09 |
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2023
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