CN117092764A - 400G photoelectric co-packaging module structure - Google Patents
400G photoelectric co-packaging module structure Download PDFInfo
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- CN117092764A CN117092764A CN202311059415.1A CN202311059415A CN117092764A CN 117092764 A CN117092764 A CN 117092764A CN 202311059415 A CN202311059415 A CN 202311059415A CN 117092764 A CN117092764 A CN 117092764A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 claims abstract description 106
- 239000013307 optical fiber Substances 0.000 claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005693 optoelectronics Effects 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 5
- 239000011324 bead Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 4
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 3
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
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- 238000012536 packaging technology Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/424—Mounting of the optical light guide
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a 400G photoelectric co-packaging module structure, and relates to the field of packaging modules. The 400G photoelectric co-packaging module structure comprises a PCB (printed circuit board), a silicon substrate, a P I C chip, an E I C chip, a digital signal processor and an optical fiber array, wherein the silicon substrate is connected to the surface of the PCB in a flip-chip manner, and the P I C chip and the digital signal processor are respectively connected to the surface of the silicon substrate in a flip-chip manner; the E I C chip is connected to the surface of the P I C chip in a flip-chip manner, and a through silicon hole is formed in the P I C chip so as to form electric signal conduction between the E I C chip and the silicon substrate; the P I C chip is integrated with a laser, a photodiode, a transmitting optical waveguide and a receiving optical waveguide, wherein the transmitting optical waveguide and the receiving optical waveguide are arranged in parallel with the surface of the P I C chip in an extending way, the transmitting optical waveguide is connected with the laser, and the receiving optical waveguide is connected with the photodiode; the P I C chip is also provided with a positioning notch which is matched with the optical fiber array, the transmitting optical waveguide corresponds to the transmitting optical fiber, and the receiving optical waveguide corresponds to the receiving optical fiber; the silicon through holes are respectively staggered with the transmitting optical waveguide and the receiving optical waveguide.
Description
Technical Field
The invention relates to the technical field of packaging modules, in particular to a 400G photoelectric co-packaging module structure.
Background
The photoelectric co-package, referred to as CPO technology for short, refers to the co-package of a chip and a module formed by assembling a switching chip and an optical engine together on the same socket. The method has the characteristics of high integration level, high data rate support, low cost and the like.
The invention of China patent application with the application publication number of CN113192937A and the application publication date of 2021.07.30 discloses a semiconductor device and a manufacturing method thereof, and specifically comprises a substrate, an Electronic Integrated Circuit (EIC) chip and a Photonic Integrated Circuit (PIC) chip, wherein the PIC chip is arranged on the substrate and provided with a first surface, and the first surface faces the substrate; a plurality of EIC chips are disposed on the first surface of the single PIC chip. The original electronic integrated circuit of the semiconductor device is divided into a plurality of sub-circuits and formed on a plurality of small EIC chips, then the plurality of EIC chips are reversely packaged on the PIC chip through the first bonding structure, and then the substrate is further packaged through the second bonding structure near the EIC chip, so that electric signals can be led out of the substrate through the first bonding structure of the EIC chip, wiring lines on the PIC chip and the second bonding structure of the EIC chip accessory, and overlong line transmission is avoided.
In the prior art, the semiconductor device is configured such that the EIC chip is disposed on a first surface of the PIC chip facing the substrate, and then the PIC chip is packaged on the substrate through the second bonding structure. However, the second bonding structure needs to avoid the EIC chip and control the bonding height, and the packaging process of the second bonding structure is complex, so that the purpose of efficiently and accurately completing co-packaging is difficult to achieve.
Disclosure of Invention
In order to solve the above problems, the present invention is directed to providing a 400G optoelectronic co-packaging module structure, so as to solve the problem that the second bonding structure of the existing device needs to avoid the EIC chip and control the bonding height, and the packaging process of the second bonding structure is complex, and it is difficult to achieve efficient and accurate co-packaging.
The technical scheme of the 400G photoelectric co-packaging module structure is as follows:
the 400G photoelectric co-packaging module structure comprises a PCB (printed circuit board), a silicon substrate, a PIC (peripheral interface controller) chip, an EIC chip, a digital signal processor and an optical fiber array, wherein the silicon substrate is connected to the surface of the PCB in a flip-chip manner, and the PIC chip and the digital signal processor are respectively connected to the surface of the silicon substrate in a flip-chip manner;
the EIC chip is connected to the surface of the PIC chip in a flip-chip manner, a through silicon hole is formed in the PIC chip, and the through silicon hole is communicated with the PIC chip along the direction perpendicular to the surface of the PIC chip so as to form electric signal conduction between the EIC chip and the silicon substrate;
the PIC chip is integrated with a laser, a photodiode, a transmitting optical waveguide and a receiving optical waveguide, wherein the transmitting optical waveguide and the receiving optical waveguide are arranged in parallel with the surface of the PIC chip in an extending way, the transmitting optical waveguide is connected with the laser, and the receiving optical waveguide is connected with the photodiode;
the PIC chip is characterized in that a positioning notch is further formed in one side edge of the PIC chip, the optical fiber array is provided with a first connector matched with the positioning notch, the transmitting optical waveguide is correspondingly arranged with the transmitting optical fibers of the optical fiber array, and the receiving optical waveguide is correspondingly arranged with the receiving optical fibers of the optical fiber array; the through silicon vias are respectively staggered with the transmitting optical waveguide and the receiving optical waveguide.
Further, the positioning notch is a step notch, and the end part of the transmitting optical waveguide and the end part of the receiving optical waveguide are respectively arranged on the side surface of the step notch;
the bottom surface of step breach has seted up the guide way, the guide way is followed the width direction of step breach extends to be arranged, the downside of first joint is provided with the bead, the bead with the unsmooth cooperation of guide way.
Further, two ribs are arranged in parallel at intervals, namely a first rib and a second rib, wherein the first rib is opposite to the outermost emitting optical fibers of the optical fiber array, and the second rib is opposite to the outermost receiving optical fibers of the optical fiber array;
correspondingly, two guide grooves are arranged in parallel at intervals, namely a first guide groove and a second guide groove, the first guide groove is correspondingly arranged with the outermost optical waveguide of the transmitting optical waveguide, and the second guide groove is correspondingly arranged with the outermost optical waveguide of the receiving optical waveguide.
Further, the first connector comprises a carrier plate and an upper pressing plate which are overlapped, a plurality of through grooves are formed in the upper side of the carrier plate at parallel intervals, the receiving optical fibers and the transmitting optical fibers of the optical fiber array are respectively arranged in the corresponding through grooves, the upper pressing plate is fixedly adhered to the upper side of the carrier plate, and the convex edges are arranged on the lower side face of the carrier plate.
Further, a centering protrusion is arranged on the side surface of the step-shaped notch, and the centering protrusion is positioned at the center position between the transmitting optical waveguide and the receiving optical waveguide; the end part of the first connector is further provided with a centering groove, the centering groove is positioned in the center position between the receiving optical fibers and the transmitting optical fibers of the optical fiber array, and the centering protrusion is in concave-convex fit with the centering groove.
Further, the centering protrusion is a conical protrusion, and the central axis of the conical protrusion is parallel to the extending direction of the transmitting optical waveguide or the receiving optical waveguide; the centering groove is a conical groove, and the central axis of the conical groove is parallel to the extending direction of the optical fibers of the optical fiber array.
Further, a plurality of through silicon vias are provided, and the plurality of through silicon vias are arranged at intervals of the transmitting optical waveguide and/or the receiving optical waveguide in a separated mode.
Furthermore, the EIC chip is also integrated with a driver and a group-crossing amplifier, and the driver and the group-crossing amplifier are respectively and electrically connected with the through silicon via.
Further, the EIC chip is connected with the PIC chip, the PIC chip is connected with the silicon substrate, the digital signal processor is connected with the silicon substrate, and the silicon substrate is connected with the PCB by brazing balls.
Furthermore, a capacitive element, a resistive element and an inductive element are attached to the surface of the PCB, and a golden finger electric port is further arranged at the end part, away from the optical fiber array, of the PCB.
The beneficial effects are that: the 400G photoelectric co-packaging module structure adopts the design form of a PCB (printed circuit board), a silicon substrate, a PIC (peripheral interface Circuit) chip, an EIC chip, a digital signal processor and an optical fiber array, wherein the silicon substrate is inversely arranged on the surface of the PCB, the PIC chip and the digital signal processor are inversely arranged on the surface of the silicon substrate respectively, and the EIC chip is inversely arranged on the surface of the PIC chip. Because the PCB, the silicon substrate, the PIC chip, the EIC chip and the digital signal processor adopt a flip-chip packaging process, the flip-chip packaging connection is simple and reliable, and compared with the wire bonding electrical connection path, the flip-chip packaging connection is shorter.
And moreover, the through silicon holes are formed in the PIC chip, so that electric signal conduction between the EIC chip and the silicon substrate is realized through the through silicon holes, electric isolation between the EIC chip and the silicon substrate is avoided, an extra bonding structure is omitted between the EIC chip and the silicon substrate, the interconnection distance of electric signals between the EIC chip and the silicon substrate is greatly shortened, and the space utilization rate and the integration degree of the packaging structure are improved. The 400G photoelectric co-packaging module structure combines flip-chip packaging and through silicon via technology, and compared with the prior device, the packaging technology is simpler, and can realize the purpose of efficiently and accurately completing co-packaging, wherein the EIC chip is avoided and the bonding height is controlled during bonding.
The PIC chip is internally integrated with a laser, a photodiode, a transmitting optical waveguide and a receiving optical waveguide, a positioning notch is arranged at the edge of the PIC chip, and a first connector of the optical fiber array is matched with the positioning notch; the optical fiber array is accurately arranged in a positioning notch of the PIC chip through the first connector, the transmitting optical waveguide is conducted between the transmitting optical fiber of the optical fiber array and the laser, and the receiving optical waveguide is conducted between the receiving optical fiber of the optical fiber array and the photodiode, so that the optical fiber array is attached to the PIC chip in a passive coupling mode. In addition, the through silicon vias are staggered with the transmitting optical waveguide and the receiving optical waveguide respectively, so that cross interference between the through silicon vias and the transmitting optical waveguide or the receiving optical waveguide is avoided, and the reliability of electric signal and optical signal transmission is ensured.
Drawings
FIG. 1 is a schematic perspective view of a 400G optoelectronic co-package module structure according to an embodiment of the present invention;
FIG. 2 is a schematic front view of a 400G optoelectronic co-package module structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a portion of the 400G optoelectronic co-package module structure of FIG. 2;
FIG. 4 is a partial enlarged view of a PIC chip, an EIC chip, and an optical fiber array in an embodiment of a 400G optoelectronic co-package module in accordance with the present invention;
FIG. 5 is a schematic cross-sectional view of a PIC chip and an EIC chip in an embodiment of a 400G optoelectronic co-package module structure in accordance with the invention;
fig. 6 is an internal optical path diagram of a PIC chip in an embodiment of a 400G optoelectronic co-package module structure in accordance with the present invention.
In the figure: the PCB comprises a 1-PCB board, 11-electronic components, 12-golden finger electric ports, a 2-silicon substrate, 20-copper solder balls, a 3-PIC chip, a 30-silicon through hole, a 31-laser, a 32-photodiode, a 33-transmitting optical waveguide, a 34-receiving optical waveguide, a 35-positioning notch, a 36-guiding groove, a 37-centering protrusion, a 38-backlight detector, a 4-EIC chip, a 5-digital signal processor, a 6-optical fiber array, a 60-first connector and 61-convex edges.
Detailed Description
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
As shown in fig. 1 to 6, a specific embodiment 1 of a 400G optoelectronic co-packaging module structure of the present invention, the 400G optoelectronic co-packaging module structure includes a PCB board 1, a silicon substrate 2, a PIC chip 3, an EIC chip 4, a digital signal processor 5 and an optical fiber array 6, the silicon substrate 2 is flip-chip connected to the surface of the PCB board 1, and the PIC chip 3 and the digital signal processor 5 are respectively flip-chip connected to the surface of the silicon substrate 2; the EIC chip 4 is flip-chip connected to the surface of the PIC chip 3, and a through silicon via 30 is disposed inside the PIC chip 3, and the through silicon via 30 is disposed through along a direction perpendicular to the surface of the PIC chip 3, so as to form electrical signal conduction between the EIC chip 4 and the silicon substrate 2.
The PIC chip 3 is integrated with a laser 31, a photodiode 32, a transmitting optical waveguide 33 and a receiving optical waveguide 34, the transmitting optical waveguide 33 and the receiving optical waveguide 34 are arranged in parallel with the surface of the PIC chip 3 in an extending way, the transmitting optical waveguide 33 is connected with the laser 31, and the receiving optical waveguide 34 is connected with the photodiode 32; the edge of one side of the PIC chip 3 is also provided with a positioning notch 35, the optical fiber array 6 is provided with a first connector 60 matched with the positioning notch 35, the transmitting optical waveguide 33 is correspondingly arranged with the transmitting optical fibers of the optical fiber array 6, and the receiving optical waveguide 34 is correspondingly arranged with the receiving optical fibers of the optical fiber array 6; the through silicon vias 30 are staggered from the transmitting optical waveguide 33 and the receiving optical waveguide 34, respectively.
The 400G photoelectric co-packaging module structure adopts the design forms of a PCB (printed circuit board) 1, a silicon substrate 2, a PIC (peripheral interface Circuit) chip 3, an EIC chip 4, a digital signal processor 5 and an optical fiber array 6, wherein the silicon substrate 2 is inversely installed on the surface of the PCB 1, the PIC chip 3 and the digital signal processor 5 are inversely installed on the surface of the silicon substrate 2 respectively, and the EIC chip 4 is inversely installed on the surface of the PIC chip 3. Because the PCB 1, the silicon substrate 2, the PIC chip 3, the EIC chip 4 and the digital signal processor 5 adopt a flip-chip packaging process, the flip-chip packaging connection is simple and reliable, and compared with the wire bonding, the electrical connection path is shorter.
Moreover, the through silicon vias 30 are arranged in the PIC chip 3, so that electric signal conduction between the EIC chip 4 and the silicon substrate 2 is realized through the through silicon vias 30, electric isolation of the PIC chip 3 between the EIC chip 4 and the silicon substrate 2 is avoided, an additional bonding structure between the EIC chip 4 and the silicon substrate 2 is omitted, the interconnection distance of electric signals between the EIC chip 4 and the silicon substrate 2 is greatly shortened, and the space utilization rate and the integration degree of the packaging structure are improved. The 400G photoelectric co-packaging module structure combines flip-chip packaging and through silicon via technology, and compared with the prior device, the packaging technology is simpler, and can realize the purpose of efficiently and accurately completing co-packaging, wherein the EIC chip is avoided and the bonding height is controlled during bonding.
The laser 31, the photodiode 32, the transmitting optical waveguide 33 and the receiving optical waveguide 34 are integrated in the PIC chip 3, a positioning notch 35 is arranged at the edge of the PIC chip 3, and a first connector 60 of the optical fiber array 6 is matched with the positioning notch 35; the optical fiber array 6 is accurately installed in the positioning notch 35 of the PIC chip 3 through the first connector 60, the transmitting optical waveguide 33 is conducted between the transmitting optical fiber of the optical fiber array 6 and the laser 31, the receiving optical waveguide 34 is conducted between the receiving optical fiber of the optical fiber array 6 and the photodiode 32, and the optical fiber array 6 is attached to the PIC chip 3 through a passive coupling mode. In addition, the through silicon vias 30 are respectively staggered with the transmitting optical waveguide 33 and the receiving optical waveguide 34, so that cross interference between the through silicon vias 30 and the transmitting optical waveguide 33 or the receiving optical waveguide 3 is avoided, and the reliability of electric signal and optical signal transmission is ensured.
In this embodiment, the positioning notch 35 is a step notch, and the end of the transmitting optical waveguide 33 and the end of the receiving optical waveguide 34 are respectively disposed on the sides of the step notch; the bottom surface of the step-shaped notch is provided with a guide groove 36, the guide groove 36 extends along the width direction of the step-shaped notch, the lower side surface of the first joint 60 is provided with a convex rib 61, and the convex rib 61 is in concave-convex fit with the guide groove 36. By the rib 61 of the first connector 60 cooperating with the guide groove 36 of the positioning notch 35, an accurate positioning of the mounting position of the optical fiber array 6 is achieved, ensuring accurate alignment between the transmitting optical fibers of the optical fiber array 6 and the transmitting optical waveguides 33, and between the receiving optical fibers of the optical fiber array 6 and the receiving optical waveguides 34.
Specifically, two ribs 61 are arranged in parallel at intervals, and are respectively a first rib and a second rib, wherein the first rib is opposite to the outermost emitting optical fibers of the optical fiber array 6, and the second rib is opposite to the outermost receiving optical fibers of the optical fiber array 6; correspondingly, two guide grooves 36 are arranged in parallel at intervals, and are respectively a first guide groove and a second guide groove, wherein the first guide groove is correspondingly arranged with the outermost optical waveguide of the transmitting optical waveguide 33, and the second guide groove is correspondingly arranged with the outermost optical waveguide of the receiving optical waveguide 34.
As a further preferred scheme, the first connector 60 includes a carrier plate and an upper pressing plate, wherein the carrier plate is arranged in a superimposed manner, a plurality of through grooves are formed in parallel at intervals on the upper side of the carrier plate, the receiving optical fibers and the transmitting optical fibers of the optical fiber array 6 are respectively installed in the corresponding through grooves, the upper pressing plate is fixedly bonded on the upper side of the carrier plate, and the convex ribs 61 are arranged on the lower side surface of the carrier plate. The receiving optical fibers and the transmitting optical fibers of the optical fiber array 6 are fixed in the through grooves of the carrier plate by using the bonding upper pressing plate, so that the relative positions of the optical fiber array 6 and the first connector 60 are ensured to be reliable, and the transmitting optical fibers and the receiving optical fibers can be accurately positioned by virtue of the guide grooves 36 and the convex edges 61.
In the present embodiment, the side face of the stepped notch is provided with a centering protrusion 37, and the centering protrusion 37 is located at the center position between the transmitting optical waveguide 33 and the receiving optical waveguide 34; the end of the first connector 60 is further provided with a centering groove, which is located at a central position between the receiving fibers and the transmitting fibers of the fiber array 6, and the centering protrusion 37 is in concave-convex fit with the centering groove. Specifically, the centering protrusion 37 is a conical protrusion, and the central axis of the conical protrusion is disposed parallel to the extending direction of the transmitting optical waveguide 33 or the receiving optical waveguide 34; the centering groove is a conical groove, and the central axis of the conical groove is parallel to the extending direction of the optical fibers of the optical fiber array 6.
Since the side surface of the step-shaped notch is provided with the centering protrusion 37, the centering protrusion 37 is a conical protrusion, the end part of the first connector 60 is provided with the centering groove, and the centering groove is a conical groove, and in the process of inserting the first connector 60 into the step-shaped notch, the conical protrusion is matched with the conical groove, so that the displacement in the inserting direction is converted into the center alignment effect, and the center butt joint precision between the receiving optical fiber and the transmitting optical waveguide 33 and between the receiving optical fiber and the receiving optical waveguide 34 is improved.
The through silicon vias 30 are arranged in a plurality, and the through silicon vias 30 are arranged at intervals of the transmitting optical waveguide 33 and/or the receiving optical waveguide 34, so that the cross interference condition of the through silicon vias 30 and the transmitting optical waveguide 33 or the receiving optical waveguide 3 is avoided, and the reliability of electric signal and optical signal transmission is ensured. It should be noted that, the through silicon vias 30 adopt etching or laser technology to process through holes on the PIC chip 3, and fill conductive materials such as copper, tungsten, polysilicon and the like in the through holes, so as to realize electrical signal communication between the EIC chip 4 and the silicon substrate 1, and effectively improve the integration level of the packaging module. The EIC chip 4 further includes a driver and a span amplifier (not shown), which are electrically connected to the through-silicon vias 30, respectively.
In addition, copper solder balls 20 are used for connection between the EIC chip 4 and the PIC chip 3, between the PIC chip 3 and the silicon substrate 2, between the digital signal processor 5 and the silicon substrate 2, and between the silicon substrate 2 and the PCB board 1. The PIC chip 3 is further integrated with a backlight detector 38, and the backlight detector 38 is connected to the transmitting optical waveguide 33 in an optically conductive manner. The surface of the PCB board 1 is attached with electronic components 11, for example: the end of the PCB 1 far away from the optical fiber array 6 is also provided with a golden finger electric port 12.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present invention, and these modifications and substitutions should also be considered as being within the scope of the present invention.
Claims (10)
1. The 400G photoelectric co-packaging module structure is characterized by comprising a PCB, a silicon substrate, a PIC chip, an EIC chip, a digital signal processor and an optical fiber array, wherein the silicon substrate is connected to the surface of the PCB in a flip-chip manner, and the PIC chip and the digital signal processor are respectively connected to the surface of the silicon substrate in a flip-chip manner;
the EIC chip is connected to the surface of the PIC chip in a flip-chip manner, a through silicon hole is formed in the PIC chip, and the through silicon hole is communicated with the PIC chip along the direction perpendicular to the surface of the PIC chip so as to form electric signal conduction between the EIC chip and the silicon substrate;
the PIC chip is integrated with a laser, a photodiode, a transmitting optical waveguide and a receiving optical waveguide, wherein the transmitting optical waveguide and the receiving optical waveguide are arranged in parallel with the surface of the PIC chip in an extending way, the transmitting optical waveguide is connected with the laser, and the receiving optical waveguide is connected with the photodiode;
the PIC chip is characterized in that a positioning notch is further formed in one side edge of the PIC chip, the optical fiber array is provided with a first connector matched with the positioning notch, the transmitting optical waveguide is correspondingly arranged with the transmitting optical fibers of the optical fiber array, and the receiving optical waveguide is correspondingly arranged with the receiving optical fibers of the optical fiber array; the through silicon vias are respectively staggered with the transmitting optical waveguide and the receiving optical waveguide.
2. The 400G optoelectronic co-package module as set forth in claim 1, wherein the positioning notch is a stepped notch, and the end of the transmitting optical waveguide and the end of the receiving optical waveguide are disposed on sides of the stepped notch, respectively;
the bottom surface of step breach has seted up the guide way, the guide way is followed the width direction of step breach extends to be arranged, the downside of first joint is provided with the bead, the bead with the unsmooth cooperation of guide way.
3. The 400G optoelectronic co-package module as set forth in claim 2, wherein two parallel ribs are provided at intervals, each of the two parallel ribs being a first rib and a second rib, the first rib being disposed opposite to an outermost transmitting fiber of the optical fiber array, and the second rib being disposed opposite to an outermost receiving fiber of the optical fiber array;
correspondingly, two guide grooves are arranged in parallel at intervals, namely a first guide groove and a second guide groove, the first guide groove is correspondingly arranged with the outermost optical waveguide of the transmitting optical waveguide, and the second guide groove is correspondingly arranged with the outermost optical waveguide of the receiving optical waveguide.
4. The 400G optoelectronic co-packaging module structure according to claim 2, wherein the first connector comprises a carrier plate and an upper pressing plate which are overlapped, a plurality of through grooves are arranged on the upper side of the carrier plate at intervals in parallel, the receiving optical fibers and the transmitting optical fibers of the optical fiber array are respectively arranged in the corresponding through grooves, the upper pressing plate is fixedly adhered to the upper side of the carrier plate, and the convex ribs are arranged on the lower side of the carrier plate.
5. The 400G optoelectronic co-package module as set forth in claim 2, wherein a centering protrusion is provided on a side of the stepped notch, the centering protrusion being located at a center position between the transmitting optical waveguide and the receiving optical waveguide; the end part of the first connector is further provided with a centering groove, the centering groove is positioned in the center position between the receiving optical fibers and the transmitting optical fibers of the optical fiber array, and the centering protrusion is in concave-convex fit with the centering groove.
6. The 400G optoelectronic co-package module as set forth in claim 5, wherein the centering protrusion is a conical protrusion, a central axis of the conical protrusion being disposed parallel to an extending direction of the transmitting optical waveguide or the receiving optical waveguide; the centering groove is a conical groove, and the central axis of the conical groove is parallel to the extending direction of the optical fibers of the optical fiber array.
7. The 400G optoelectronic co-package module as set forth in claim 1 wherein there are a plurality of through silicon vias, the plurality of through silicon vias being spaced apart at the spacing of the transmitting optical waveguide and/or the receiving optical waveguide.
8. The 400G optoelectronic co-package module as set forth in claim 1, wherein the EIC chip is further integrated with a driver and a group-crossing amplifier, the driver and the group-crossing amplifier being electrically connected to the through-silicon via, respectively.
9. The 400G optoelectronic co-package module as set forth in claim 1, wherein the EIC chip is connected to the PIC chip, the PIC chip is connected to the silicon substrate, the digital signal processor is connected to the silicon substrate, and the silicon substrate is connected to the PCB board by solder balls.
10. The 400G optoelectronic co-package module of claim 1, wherein the surface of the PCB is provided with a capacitive element, a resistive element, and an inductive element, and the end of the PCB remote from the optical fiber array is further provided with a gold finger electrical port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311059415.1A CN117092764A (en) | 2023-08-22 | 2023-08-22 | 400G photoelectric co-packaging module structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311059415.1A CN117092764A (en) | 2023-08-22 | 2023-08-22 | 400G photoelectric co-packaging module structure |
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| CN117092764A true CN117092764A (en) | 2023-11-21 |
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| CN202311059415.1A Pending CN117092764A (en) | 2023-08-22 | 2023-08-22 | 400G photoelectric co-packaging module structure |
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| Country | Link |
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| CN (1) | CN117092764A (en) |
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