CN117080372A - Silicon-based negative electrode material and preparation method thereof - Google Patents
Silicon-based negative electrode material and preparation method thereof Download PDFInfo
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- CN117080372A CN117080372A CN202210503887.0A CN202210503887A CN117080372A CN 117080372 A CN117080372 A CN 117080372A CN 202210503887 A CN202210503887 A CN 202210503887A CN 117080372 A CN117080372 A CN 117080372A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000007773 negative electrode material Substances 0.000 title description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 41
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 40
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 40
- 239000010405 anode material Substances 0.000 claims abstract description 39
- 238000001354 calcination Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010439 graphite Substances 0.000 claims abstract description 33
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000007873 sieving Methods 0.000 claims abstract description 12
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 9
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims abstract description 9
- 239000007888 film coating Substances 0.000 claims abstract description 9
- 238000009501 film coating Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 102220043159 rs587780996 Human genes 0.000 claims abstract description 9
- 239000010426 asphalt Substances 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000012071 phase Substances 0.000 claims description 9
- 239000007790 solid phase Substances 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 5
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000005253 cladding Methods 0.000 abstract 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000013329 compounding Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000012216 screening Methods 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000002153 silicon-carbon composite material Substances 0.000 description 3
- 238000004177 carbon cycle Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000007709 nanocrystallization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
- H01M4/624—Electric conductive fillers
- H01M4/625—Carbon or graphite
Abstract
The invention discloses a preparation method of a silicon-based anode material, which specifically comprises the following steps: s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system; s2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on the flexible substrate to form a film layer; s3, after the thickness of the co-sputtered film reaches 1-20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination; s4, crushing the calcined material to D50=1-15 μm; s5, mixing the crushed material with asphalt for calcination or placing the crushed material in a CVD furnace, and introducing a mixed gas of acetylene and nitrogen for cladding; and S6, sieving and demagnetizing the material subjected to calcination coating or CVD coating to obtain the silicon-based anode material. Realizing the uniform combination of carbon and nano-scale and even sub-nano-scale silicon. The silicon-based anode material prepared by the method is also disclosed.
Description
Technical Field
The invention relates to the technical field of lithium battery anode materials, in particular to a silicon-based anode material and a preparation method of the silicon-based anode material.
Background
With the progress of new energy lithium battery technology, batteries are increasingly developed towards light weight, miniaturization and long endurance, so that extremely high requirements are placed on the energy density of the batteries. The negative electrode material is one of five main materials of the lithium battery, and plays an important role in improving the energy density of the battery. The traditional graphite anode material is more and more close to the theoretical capacity of 372mAh/g, and the silicon-based anode material has higher capacity compared with the traditional graphite anode material and is a core material of the current high-energy-density battery.
At present, the preparation technology of the silicon-carbon negative electrode material mainly comprises the steps of compounding a nano silicon material with a carbon material, and generally preparing the nano silicon material first, then compounding the nano silicon material with the carbon material, and further preparing the silicon-carbon composite material. In order to alleviate the huge volume change and cycle degradation problems of silicon during delithiation, it is necessary to nanocrystallize the silicon material. Theoretically, the smaller the nano silicon size, the better its expansion properties, while the poorer its oxidation resistance and dispersibility. Currently, the main means of silicon nanocrystallization are sand milling and gas phase cracking. The nano silicon prepared by the preparation method independently has larger particle size or serious agglomeration, and has poor composite effect with carbon, so that great difficulty is brought to the preparation of the silicon-carbon anode material. The current conventional silicon-carbon material is basically prepared by compounding nano silicon with the wavelength of more than 100nm with a carbon material. Although the method can meet the commercial application to a certain extent, the method still faces the problems of large expansion, small blending amount, low capacity collocation and limited improvement of the energy density of the battery in the actual use process.
Disclosure of Invention
The first object of the invention is to provide a preparation method of a silicon-based anode material, which realizes uniform compounding of carbon and nanoscale or even sub-nanoscale silicon and complete and uniform coating of nano silicon through subsequent solid-phase or gas-phase carbon coating, thereby improving the performance of the silicon-based anode material.
A second object of the present invention is to provide a silicon-based anode material.
The first technical scheme adopted by the invention is that the preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
s2, simultaneously starting a silicon target and a graphite target, and co-sputtering nano silicon and graphite carbon on the flexible substrate to form a film layer with a certain thickness;
s3, after the thickness of the co-sputtered film reaches 1-20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
s4, crushing the calcined material to D50=1-15 μm;
s5, mixing the crushed material with asphalt, and then placing the mixture in a calciner for calcination, wherein the calcination temperature is 500-1000 ℃ and the calcination time is 1-3 h; or placing the mixture in a CVD furnace, introducing a mixed gas of organic gas and nitrogen, and preserving the temperature for 1-5 h at the temperature of 700-1000 ℃;
s6, sieving and demagnetizing the material coated by the solid phase or gas phase CVD to obtain the novel nano silicon-based anode material.
The present invention is also characterized in that,
in the step S1, the flexible substrate material is one of PET, PI, PP, PE, PC and PMMA;
in the step S2, the silicon target is one of intrinsic silicon, P-type silicon target, N-type silicon target and silicon oxide target, the mass content of carbon in a film layer formed by nano silicon and graphite carbon is controlled to be 10-50%, and the mass content of silicon is controlled to be 50-90%;
in the step S3, the calcination temperature is controlled to be 500-900 ℃ and the calcination time is 1-5 h;
in the step S5, the mixing ratio of the crushed material to the asphalt is 1:0.05-1:0.20; the volume ratio of the mixed gas is as follows: organic gas: nitrogen=0.2-1, and the organic gas is one of acetylene, methane and propylene;
in the step S6, a 300-400 mesh screen is adopted for screening.
The second technical scheme adopted by the invention is that the silicon-based anode material is prepared by adopting the preparation method.
The beneficial effects of the invention are as follows:
the gas phase uniform composite technology provided by the invention realizes the uniform composite of carbon and nano-scale or even sub-nano-scale silicon, and realizes the complete uniform coating of nano-silicon through the subsequent solid phase or gas phase carbon coating, thereby improving the performance of the silicon-based anode material. Because the compounding of the nano silicon and the carbon is carried out simultaneously under the vacuum condition, the uniformity of the compounding is ensured, and meanwhile, the nanometer silicon-carbon composite has good safety.
Drawings
FIG. 1 is a process flow of preparing a silicon-carbon composite negative electrode according to the invention;
FIG. 2 is a graph of the silicon carbon cycle of the present invention versus a commercial silicon carbon cycle.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The invention provides a preparation method of a silicon-based anode material, which is shown in figure 1 and comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of one of PET, PI, PP, PE, PC and PMMA.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer with a certain thickness, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate of the film layer is 0.25-4 nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 10-50%, and the silicon mass content is controlled to be 50-90%;
in the step S2, the silicon target is one of intrinsic silicon, a P-type silicon target, an N-type silicon target and silicon oxide, preferably an N-type heavily doped silicon target;
s3, after the thickness of the co-sputtered film reaches 1-20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled to be 500-900 ℃ and the calcination time is 1-5 h;
s4, crushing the calcined material to D50=1-15 mu m, wherein the crushing can be mechanical crushing or air flow crushing;
s5, mixing the crushed material with asphalt, and then placing the mixture into a calciner for calcination, wherein the calcination temperature is 500-1000 ℃ and the calcination time is 1-3 h; or placing the mixture in a CVD furnace, introducing a mixed gas of organic gas and nitrogen, and preserving the temperature for 1-5 h at 700-1000 ℃;
in the step S5, the mixing ratio of the crushed material to the asphalt is 1:0.05-1:0.20; the volume ratio of the mixed gas is as follows: organic gas: nitrogen=0.2-1, and the organic gas is one of acetylene, methane and propylene;
s6, sieving and demagnetizing the material coated by the solid phase or gas phase CVD to obtain the novel nano silicon-based anode material.
In the step S6, a 300-400 mesh screen is adopted for screening.
The invention also provides a silicon-based anode material, which is prepared by adopting the preparation method.
Example 1
The preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of PET.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate is 0.25nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 10%, and the silicon mass content is controlled to be 90%; an N-type heavily doped silicon target is used.
S3, after the thickness of the co-sputtered film reaches 10 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled at 900 ℃ and the calcination time is 3 hours.
S4, crushing the calcined material to D50=10μm, wherein the crushing adopts air current crushing;
s5, placing the crushed material into a CVD furnace, introducing a mixed gas of acetylene and nitrogen, and preserving heat for 4 hours at 900 ℃;
in the step S5, the volume ratio of the mixed gas is as follows: acetylene: nitrogen=0.2.
S6, sieving and demagnetizing the material coated by the CVD to obtain the silicon-based anode material.
In step S6, a 300 mesh screen is used for sieving.
Example 2
The preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of PI.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate is 4nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 50%, and the silicon mass content is controlled to be 50%; an N-type heavily doped silicon target is used.
S3, after the thickness of the co-sputtered film reaches 20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled at 800 ℃ and the calcination time is 4 hours.
S4, crushing the calcined material to D50=8μm, wherein the crushing adopts air current crushing;
s5, placing the crushed material into a CVD furnace, introducing mixed gas of formaldehyde and nitrogen, and preserving heat for 3 hours at 1000 ℃;
in the step S5, the volume ratio of the mixed gas is as follows: formaldehyde: nitrogen=1.
S6, sieving and demagnetizing the material coated by the CVD to obtain the silicon-based anode material.
In step S6, screening is performed by using a 400-mesh screen.
Example 3
The preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of PP.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate is 3nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 10%, and the silicon mass content is controlled to be 90%; a P-type heavily doped silicon target is used.
S3, after the thickness of the co-sputtered film reaches 5 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled at 500 ℃ and the calcination time is 2 hours.
S4, crushing the calcined material to D50=3μm, wherein the crushing adopts air current crushing;
s5, placing the crushed material into a CVD furnace, introducing a mixed gas of propylene and nitrogen, and preserving heat for 5 hours at 700 ℃;
in the step S5, the volume ratio of the mixed gas is as follows: propylene: nitrogen=1.
S6, sieving and demagnetizing the material coated by the CVD to obtain the silicon-based anode material.
In step S6, a 300 mesh screen is used for sieving.
Example 4
The preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of PE.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate is 2nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 20%, and the silicon mass content is controlled to be 80%; an intrinsic silicon target is adopted.
S3, after the thickness of the co-sputtered film reaches 20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled at 900 ℃ and the calcination time is 1h.
S4, crushing the calcined material to D50=15μm, wherein mechanical crushing is adopted for crushing;
s5, placing the crushed material into a box-type furnace, and preserving heat for 1h at 1000 ℃;
in the step S5, the mixing ratio of the crushed material to the asphalt is 1:0.06.
s6, sieving and demagnetizing the material coated by the CVD to obtain the silicon-based anode material.
In step S6, screening is performed by using a 400-mesh screen.
Example 5
The preparation method of the silicon-based anode material comprises the following steps:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
in step S1, the flexible substrate is made of PMMA.
S2, simultaneously starting a silicon target and a graphite target to co-sputter nano silicon and graphite carbon on a flexible substrate to form a film layer, and controlling the growth rate of the nano silicon and the graphite carbon by controlling the sputtering power of the two targets, wherein the growth rate is 4nm/S;
in the step S2, the carbon mass content in the nano silicon and graphite carbon forming film layer is controlled to be 30%, and the silicon mass content is controlled to be 70%; an intrinsic silicon target is adopted.
S3, after the thickness of the co-sputtered film reaches 20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
in the step S3, the calcination temperature is controlled at 750 ℃ and the calcination time is 3 hours.
S4, crushing the calcined material to D50=10μm, wherein mechanical crushing is adopted for crushing;
s5, placing the crushed material into a CVD furnace, introducing a mixed gas of acetylene and nitrogen, and preserving heat for 4 hours at 800 ℃;
in the step S5, the volume ratio of the mixed gas is as follows: acetylene: nitrogen=0.6.
S6, sieving and demagnetizing the material coated by the CVD to obtain the silicon-based anode material.
In step S6, screening is performed by using a 400-mesh screen.
| Examples | Capacity of | First effect |
| Example 1 | 2500mAh/g | 85％ |
| Example 2 | 1750mAh/g | 89％ |
| Example 3 | 2400mAh/g | 86％ |
| Example 4 | 2100mAh/g | 87.5％ |
| Example 5 | 1850mAh/g | 88.5％ |
In the related literature, a magnetron co-sputtering technology is adopted to prepare the Si// C composite anode film, the capacity of the Si// C composite anode film reaches 2000mAh/g and the initial effect reaches 87%, and the Si// C composite anode film is directly applied to a lithium battery anode piece, has good cycle performance in the actual cycle process, but has the problem of film cracking in the later cycle stage. The method of the invention is to calcine the silicon-carbon co-sputtering film, and further obtain the powder material after coating by solid phase or CVD gas phase, so that the nano silicon can be uniformly and completely coated, the problem of cycle deterioration caused by material cracking is avoided, the cycle stability is good, and the cycle beam of the material prepared by adopting the process of the embodiment 2 is shown in figure 2.
The method adopts a magnetron co-sputtering technology to realize the uniform combination of nano silicon and carbon under the vacuum condition, and completely coats the exposed nano silicon by a subsequent solid-phase or gas-phase CVD coating process. The method can obtain the silicon-based anode material with uniformly compounded nano silicon and carbon, can effectively control the granularity of nano silicon, enhances the process safety, and avoids the problem that the anode is easy to crack when a silicon film is directly used as the anode.
Claims (7)
1. The preparation method of the silicon-based anode material is characterized by comprising the following steps of:
s1, placing a flexible substrate in a discharging cavity of a multi-target magnetron sputtering system;
s2, simultaneously starting a silicon target and a graphite target, and co-sputtering nano silicon and graphite carbon on the flexible substrate to form a film layer with a certain thickness;
s3, after the thickness of the co-sputtered film reaches 1-20 mu m, placing a film coating sample containing the flexible substrate in an inert atmosphere calciner for calcination;
s4, crushing the calcined material to D50=1-15 μm;
s5, mixing the crushed material with asphalt, and then placing the mixture into a calciner for calcination, wherein the calcination temperature is 500-1000 ℃ and the calcination time is 1-3 h; or placing the mixture in a CVD furnace, introducing a mixed gas of organic gas and nitrogen, and preserving the temperature for 1-5 h at 700-1000 ℃;
s6, sieving and demagnetizing the material coated by the solid phase or gas phase CVD to obtain the novel nano silicon-based anode material.
2. The method of manufacturing a silicon-based anode material according to claim 1, wherein in step S1, the flexible substrate material is one of PET, PI, PP, PE, PC, PMMA.
3. The method for producing a silicon-based anode material according to claim 1, wherein in step S2, the silicon target is one of intrinsic silicon, P-type silicon target, N-type silicon target, and silicon oxide target, and the carbon mass content in the nano silicon and graphitic carbon forming film layer is controlled to be 10 to 50% and the silicon mass content is controlled to be 50 to 90%.
4. The method of producing a silicon-based anode material according to claim 1, wherein in step S3, the calcination temperature is controlled to 500 to 900 ℃ and the calcination time is 1 to 5 hours.
5. The method for producing a silicon-based anode material according to claim 1, wherein in step S5, the mixing ratio of the crushed material to asphalt is 1:0.05 to 1:0.20; the volume ratio of the mixed gas is as follows: acetylene: nitrogen=0.2-1, and the organic gas is one of acetylene, methane and propylene.
6. The method for producing a silicon-based anode material according to claim 1, wherein in step S6, a 300-400 mesh sieve is used for sieving.
7. The silicon-based anode material is characterized by being prepared by adopting the preparation method of any one of claims 1-6.
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| CN202210503887.0A CN117080372A (en) | 2022-05-10 | 2022-05-10 | Silicon-based negative electrode material and preparation method thereof |
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