CN117059713B - Preparation method of high-brightness LED chip based on micro-nano processing technology - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention relates to the technical field of high-brightness LED chip preparation methods, in particular to a high-brightness LED chip preparation method based on a micro-nano processing technology. Firstly, micro-nano processing is carried out on an InGaN substrate, so that the light-emitting area of the InGaN substrate is increased through electrochemical etching, and the light extraction efficiency is improved; and then, taking InGaN as a substrate, adopting a radio frequency magnetron sputtering system on the surface of the substrate to prepare a ZnO film, a ZnMgO film and a NiO film, wherein ZnO has higher exciton binding energy and low material price, and the ZnMgO film between the ZnO film and the NiO film has larger forbidden bandwidth than ZnO, so that the effect of carrier confinement can be achieved, and the brightness of the LED chip is improved.
Description
Technical Field
The invention relates to the technical field of high-brightness LED chip preparation methods, in particular to a high-brightness LED chip preparation method based on a micro-nano processing technology.
Background
An LED chip is a semiconductor device capable of converting electric energy into visible light. LED chips have many advantages over conventional light sources. Firstly, the energy consumption of the LED chip is very low, and the energy can be effectively saved. Secondly, the service life of the LED chip is long, and the LED chip can be used for 5 ten thousand to 10 ten thousand hours generally, so that the service life is greatly prolonged. In addition, the LED chip has advantages of small size, light weight, impact resistance, fast response, etc., and thus is widely used in various lighting, display and photoelectric control applications. In the manufacturing process of the LED chip, micro-nano processing is a very critical step, and through the micro-nano processing, the semiconductor material in the LED chip can be processed in a micro-or nano-scale manner, so that the luminous efficiency of the LED chip is improved. When the micro-nano processing treatment is lacking, the semiconductor material in the LED chip cannot be fully optimized, the luminous efficiency is low, the brightness cannot meet the requirements of various applications, the performance of the LED chip is affected, and the use of the LED chip in various applications is limited. In addition, when lacking the processing of receiving a little, the phenomenon of light inhomogeneous can appear in the light emitting area of LED chip, has influenced lighting effect and visual effect. In view of the above, the invention provides a preparation method of a high-brightness LED chip based on a micro-nano processing technology.
Disclosure of Invention
The invention aims to provide a preparation method of a high-brightness LED chip based on a micro-nano processing technology, which aims to solve the problems in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a preparation method of a high-brightness LED chip based on micro-nano processing technology comprises the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding sulfuric acid solution into the electrolytic cell as electrolyte to submerge the three electrodes in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, and etching InGaN;
s3: drying the processed InGaN, cutting into wafers, sequentially placing the wafers in acetone, ethanol and deionized water, and ultrasonically cleaning; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system;
s7: preparing a round Au electrode on the NiO film as a positive electrode of a chip through a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: and (3) dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, and performing heat treatment to solidify the silver paste to obtain the high-brightness LED chip.
After the InGaN is subjected to electrochemical etching, the carrier concentration and photon radiation rate at the quantum well are improved, a large amount of dislocation and impurities exist in the InGaN quantum well, the defects cause the formation of non-radiative recombination centers, the radiation recombination efficiency is reduced, the brightness of a chip is influenced, the dislocation and impurities in the InGaN quantum well can be effectively removed by the electrochemical etching, the number of the non-radiative recombination centers is reduced, the radiation recombination efficiency is improved, in addition, the shape and the structure of the quantum well can be changed by the electrochemical etching, so that the emission and the propagation of photons are more facilitated, in the electrochemical etching process, atoms on the InGaN surface lose electrons to form positive charges, the positive charges attract ions and neutral particles with negative charges, atoms on the material surface are rearranged to form structures such as grooves and bulges, the structures can effectively reduce the scattering of photons on the surface, the emission efficiency of the photons is improved, and the surface roughness generated in the etching process is also beneficial to improving the photon radiation rate;
meanwhile, the carrier concentration of the quantum well can be changed by coating ZnO, znMgO and NiO films, and the films can provide additional carriers, so that the carrier concentration in the quantum well is improved, the radiation recombination efficiency is improved, and the brightness of the chip is increased; niO is a direct band gap semiconductor material, the forbidden band width of the NiO is 3.6eV, the NiO has smaller electron affinity (1.8 eV), and the NiO is difficult to obtain higher hole mobility and carrier concentration, so that a carrier composite region in NiO/ZnO is mainly positioned at one side of NiO, znMgO has larger forbidden band width relative to ZnO, and the ZnMgO is added between NiO and ZnO, so that the effect of carrier confinement can be achieved, and the brightness of an LED chip is improved.
Preferably, the concentration of sulfuric acid in S2 is 0.3-1.0mol/L.
Preferably, the micro-nano processing device in the S2 comprises a supporting platform, an electrolytic cell, a light source, an optical chopper, an inverted optical microscope and a three-dimensional moving platform, wherein the light source adopts a 3W ultraviolet LED in the etching process of InGaN, the dominant wavelength is 365nm, and the effective irradiation area of the surface of InGaN is 0.2cm 2 。
Preferably, the drying temperature in the step S3 is 80-90 ℃, the time is 2-3h, the concentration of acetone is 13%, the concentration of ethanol is 15%, and the ultrasonic cleaning time is 10-20min.
Preferably, the conditions of the rf magnetron sputtering system in S4 are as follows: the Ar atmosphere and the substrate temperature were 300 ℃.
Preferably, the conditions in the rf magnetron sputtering system in S5 are as follows: the temperature of the substrate is 300 ℃, and the sputtering target material is a metal Mg target and Al doped ZnO composite material.
Preferably, the conditions in the rf magnetron sputtering system in S6 are as follows: the substrate temperature is 300 ℃, the sputtered target material is a Ni target, and oxygen is added into the sputtering atmosphere.
Preferably, the diameter of the circular Au electrode in S7 is 1mm.
Preferably, the heat treatment temperature in S8 is 100 to 300 ℃.
Compared with the prior art, the invention has the beneficial effects that:
adding an InGaN substrate into an electrochemical micro-nano processing device, performing electrochemical etching processing on the InGaN substrate, and improving the carrier concentration and photon radiation rate at a quantum well to improve the brightness of a chip; and then, taking InGaN as a substrate, coating ZnO, znMgO and NiO films through a radio frequency magnetron sputtering system, so that the brightness of the chip is improved, the service life of the chip can be prolonged, and the chip has higher stability and reliability; meanwhile, the high-brightness LED chip can be applied to a wider application field, and can meet the requirements of various environments and illumination.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. In the present invention, all the equipment and raw materials are commercially available or commonly used in the industry, and the methods in the following examples are conventional in the art unless otherwise specified.
Example 1: in this embodiment, the preparation method of the high-brightness LED chip based on the micro-nano processing technology includes the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: at the position ofAdding 0.5mol/L sulfuric acid solution into an electrolytic cell as electrolyte to enable three electrodes to be submerged in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, wherein a light source in micro-nano processing is a 3W ultraviolet LED light source (main wavelength is 365 nm), etching InGaN, and the effective irradiation area of the surface of the InGaN is 0.2cm 2 ；
S3: drying the processed InGaN for 2 hours at 80 ℃, cutting into wafers, sequentially placing the wafers in 13% of acetone, 15% of ethanol and deionized water, and ultrasonically cleaning for 10 minutes; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system under the conditions of Ar atmosphere and 300 ℃ of substrate temperature;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃ and the sputtering target material is a metal Mg target and an Al doped ZnO composite material;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃, the sputtered target material is a Ni target and oxygen is added into the sputtering atmosphere;
s7: preparing a round Au electrode with the diameter of 1mm on the NiO film as a positive electrode of a chip by a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, heating to 200 ℃ to solidify the silver paste, and obtaining a test sample 1;
the micro-nano processing device in the S2 is composed of a supporting platform, an electrolytic cell, a light source, an optical chopper, an inverted optical microscope and a three-dimensional moving platform, wherein the optical chopper, the light source and the electrolytic cell are arranged on the supporting platform, a round hole is reserved on the supporting platform, the inverted optical microscope can observe the etching condition of a substrate in the electrolytic cell through the round hole, and a potential difference is formed between an electrode and electrolyte, so that the working electrode is dissolved under the action of an electric field to form a micro-nano structure; the light source is arranged right above the electrolytic cell, the light irradiation is controlled between the light source and the electrolytic cell through the optical chopper, the inverted optical microscope is arranged right below the electrolytic cell, and the three-dimensional moving platform is connected with the inverted optical microscope and is used for adjusting the position and focal length of the microscope.
Example 2: in this embodiment, the preparation method of the high-brightness LED chip based on the micro-nano processing technology includes the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding 0.3mol/L sulfuric acid solution as electrolyte into an electrolytic cell to submerge three electrodes in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, wherein a light source in micro-nano processing is a 3W ultraviolet LED light source (main wavelength is 365 nm), etching InGaN, and the effective irradiation area of the surface of InGaN is 0.2cm 2 ；
S3: drying the processed InGaN for 2 hours at 80 ℃, cutting into wafers, sequentially placing the wafers in 13% of acetone, 15% of ethanol and deionized water, and ultrasonically cleaning for 10 minutes; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system under the conditions of Ar atmosphere and 300 ℃ of substrate temperature;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃ and the sputtering target material is a metal Mg target and an Al doped ZnO composite material;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃, the sputtered target material is a Ni target and oxygen is added into the sputtering atmosphere;
s7: preparing a round Au electrode with the diameter of 1mm on the NiO film as a positive electrode of a chip by a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: and (3) dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, heating to 200 ℃ and solidifying the silver paste to obtain a test sample 2.
Example 3: in this embodiment, the preparation method of the high-brightness LED chip based on the micro-nano processing technology includes the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding 1.0mol/L sulfuric acid solution as electrolyte into an electrolytic cell to submerge three electrodes in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, wherein a light source in micro-nano processing is a 3W ultraviolet LED light source (main wavelength is 365 nm), etching InGaN, and the effective irradiation area of the surface of InGaN is 0.2cm 2 ；
S3: drying the processed InGaN for 2 hours at 80 ℃, cutting into wafers, sequentially placing the wafers in 13% of acetone, 15% of ethanol and deionized water, and ultrasonically cleaning for 10 minutes; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system under the conditions of Ar atmosphere and 300 ℃ of substrate temperature;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃ and the sputtering target material is a metal Mg target and an Al doped ZnO composite material;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃, the sputtered target material is a Ni target and oxygen is added into the sputtering atmosphere;
s7: preparing a round Au electrode with the diameter of 1mm on the NiO film as a positive electrode of a chip by a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: and (3) dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, heating to 200 ℃ and solidifying the silver paste to obtain a test sample 3.
Example 4: in this embodiment, the preparation method of the high-brightness LED chip based on the micro-nano processing technology includes the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding 0.5mol/L sulfuric acid solution as electrolyte into an electrolytic cell to enable three electrodes to be submerged in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, wherein a light source in micro-nano processing is a 3W ultraviolet LED light source (the dominant wavelength is 365 nm), etching InGaN, and the effective irradiation area of the surface of InGaN is 0.2cm 2 ；
S3: drying the processed InGaN for 2 hours at 80 ℃, cutting into wafers, sequentially placing the wafers in 13% of acetone, 15% of ethanol and deionized water, and ultrasonically cleaning for 10 minutes; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system under the conditions of Ar atmosphere and 300 ℃ of substrate temperature;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃ and the Ar atmosphere is adopted, and the sputtering target material is a metal Mg target and Al doped ZnO composite material;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃, the sputtered target material is a Ni target and oxygen is added into the sputtering atmosphere;
s7: preparing a round Au electrode with the diameter of 1mm on the NiO film as a positive electrode of a chip by a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: and (3) dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, heating to 200 ℃ and solidifying the silver paste to obtain a test sample 4.
Example 5: in this embodiment, the preparation method of the high-brightness LED chip based on the micro-nano processing technology includes the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding 0.5mol/L sulfuric acid solution as electrolyte into an electrolytic cell to enable three electrodes to be submerged in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, wherein a light source in micro-nano processing is a 3W ultraviolet LED light source (the dominant wavelength is 365 nm), etching InGaN, and the effective irradiation area of the surface of InGaN is 0.2cm 2 ；
S3: drying the processed InGaN for 2 hours at 80 ℃, cutting into wafers, sequentially placing the wafers in 13% of acetone, 15% of ethanol and deionized water, and ultrasonically cleaning for 10 minutes; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system under the conditions of Ar atmosphere and 300 ℃ of substrate temperature;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system under the condition that the substrate temperature is 300 ℃ and the sputtering target material is a metal Mg target and an Al doped ZnO composite material;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system under the conditions that the substrate temperature is 300 ℃, the sputtered target material is a Ni target and Ar atmosphere;
s7: preparing a round Au electrode with the diameter of 1mm on the NiO film as a positive electrode of a chip by a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: and (3) dripping low-temperature conductive silver paste on the Au electrode and the In electrode, connecting a metal copper wire, heating to 200 ℃ and solidifying the silver paste to obtain a test sample 5.
Comparative example 1: the same preparation process as in example 1 was used, except that InGaN of comparative example 1 was not subjected to the electrochemical etching process, to obtain test sample 6.
Comparative example 2: the same preparation process as in example 1 was employed, except that comparative example 2 did not contain a conditional thin film, to obtain test sample 7.
The obtained test samples 1 to 7 were subjected to a luminance test in which the passing current was constant, and the test results are shown in the following table:
；
the data in the table show that the method can effectively improve the brightness of the LED chip, and compared with the test samples 1-3, the method can find that when the concentration of sulfuric acid changes, the electrochemical etching of the substrate InGaN is influenced to a certain extent, the luminous intensity of the LED chip is increased along with the increase of the concentration of sulfuric acid, and the luminous intensity of the LED chip is reduced along with the increase of the concentration of sulfuric acid after reaching the maximum value; comparing the test samples 1, 4 and 5 can find that when the environmental conditions in the radio frequency magnetron sputtering system change, the generation of subsequent ZnO, znMgO and NiO films can be influenced, and the brightness of the LED chip can be influenced; comparing test samples 1, 6 and 7, it can be found that when the electrochemical etching process and the ZnMgO film are absent, the brightness of the LED chip is greatly affected, and the production and the preparation of the high-brightness LED chip are not facilitated.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments, and that the above-described embodiments and descriptions are only preferred embodiments of the present invention, and are not intended to limit the invention, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A preparation method of a high-brightness LED chip based on a micro-nano processing technology is characterized by comprising the following steps: the method comprises the following steps:
s1: after coating metal indium on the local surface of an InGaN substrate, bonding the InGaN substrate with conductive silver adhesive and a copper sheet to form ohmic contact as a working electrode; pt is used as a counter electrode, and an Ag/AgCl electrode is used as a reference electrode;
s2: adding sulfuric acid solution into the electrolytic cell as electrolyte to submerge the three electrodes in the electrolyte, placing the electrolytic cell into an electrochemical micro-nano processing device, and etching InGaN;
s3: drying the processed InGaN, cutting into wafers, sequentially placing the wafers in acetone, ethanol and deionized water, and ultrasonically cleaning; treating the surface residual liquid with a nitrogen gun to dry the surface residual liquid;
s4: preparing a ZnO film on an InGaN substrate by adopting a radio frequency magnetron sputtering system;
s5: preparing a ZnMgO film on the ZnO film by adopting a radio frequency magnetron sputtering system;
s6: preparing a NiO film on the ZnMgO film by adopting a radio frequency magnetron sputtering system;
s7: preparing a round Au electrode on the NiO film as a positive electrode of a chip through a radio frequency magnetron sputtering system, and preparing In on InGaN as a negative electrode;
s8: dripping low-temperature conductive silver paddles on the Au electrode and the In electrode, connecting the low-temperature conductive silver paddles with a metal copper wire, and performing heat treatment to solidify the silver paddles to obtain a high-brightness LED chip;
the micro-nano processing device in the S2 consists of a supporting platform, an electrolytic cell, a light source, an optical chopper, an inverted optical microscope and a three-dimensional moving platform, wherein the light source adopts a 3W ultraviolet LED in the etching process of InGaN, the dominant wavelength is 365nm, and the effective irradiation area of the surface of InGaN is 0.2cm 2 ；
The concentration of sulfuric acid in the S2 is 0.3-1.0mol/L;
the conditions in the radio frequency magnetron sputtering system in the step S5 are as follows: the temperature of the substrate is 300 ℃, and the sputtering target material is a metal Mg target and Al doped ZnO composite material.
2. The method for manufacturing the high-brightness LED chip based on the micro-nano processing technology according to claim 1, which is characterized in that: the drying temperature in the step S3 is 80-90 ℃, the time is 2-3h, the concentration of acetone is 13%, the concentration of ethanol is 15%, and the ultrasonic cleaning time is 10-20min.
3. The method for manufacturing the high-brightness LED chip based on the micro-nano processing technology according to claim 1, which is characterized in that: the conditions of the radio frequency magnetron sputtering system in the S4 are as follows: the Ar atmosphere and the substrate temperature were 300 ℃.
4. The method for manufacturing the high-brightness LED chip based on the micro-nano processing technology according to claim 1, which is characterized in that: the conditions in the radio frequency magnetron sputtering system in the S6 are as follows: the substrate temperature is 300 ℃, the sputtered target material is a Ni target, and oxygen is added into the sputtering atmosphere.
5. The method for manufacturing the high-brightness LED chip based on the micro-nano processing technology according to claim 1, which is characterized in that: the diameter of the circular Au electrode in the step S7 is 1mm.
6. The method for manufacturing the high-brightness LED chip based on the micro-nano processing technology according to claim 1, which is characterized in that: the heat treatment temperature in the step S8 is 100-300 ℃.
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