CN117040478A - BAW filter, manufacturing method thereof, integrated circuit and electronic equipment - Google Patents
BAW filter, manufacturing method thereof, integrated circuit and electronic equipment Download PDFInfo
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- CN117040478A CN117040478A CN202311292489.XA CN202311292489A CN117040478A CN 117040478 A CN117040478 A CN 117040478A CN 202311292489 A CN202311292489 A CN 202311292489A CN 117040478 A CN117040478 A CN 117040478A
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 124
- 230000004888 barrier function Effects 0.000 claims description 52
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 abstract description 15
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application provides a BAW filter, a preparation method thereof, an integrated circuit and electronic equipment, wherein a main body groove area in the BAW filter is a working area, a release hole is positioned on one side of an extended groove area far away from the main body groove area, namely, the release hole is positioned in a non-working area of the BAW filter, so that the problem of alignment of the release hole and the working area is not required to be considered, the design difficulty of the BAW filter is reduced, the morphology of the release hole is not required to be strictly controlled under the design, the process difficulty is reduced, and the anti-power capability is improved to a certain extent.
Description
Technical Field
The present application relates to the field of semiconductor devices, and more particularly, to a BAW filter, a method for manufacturing the same, an integrated circuit, and an electronic device.
Background
The filter is a device for filtering interference of different-frequency signals, attenuating part of frequency components and only allowing specified frequency components to pass through, and is a technical basis for application of wireless spectrum as a non-renewable scarce resource. In which the filter is designed by using resonators as basic units, a corresponding topology can be constructed and the signal of the specified frequency component can be amplified. Currently, filters are largely classified into SAW (Surface Acoustic Wave ) filters and BAW (Bulk Acoustic Wave, bulk acoustic wave) filters.
In the prior art, the release holes in BAW filters are located near or directly open in the working area. When the release hole is positioned near the working area, various requirements are set for layout design, and the performance of the BAW filter can be directly affected when the alignment deviation is slightly large; when the release hole is positioned in the working area, firstly the area of the working area is reduced, secondly various requirements are made on the morphology of the release hole and the subsequent process, and the performance of the BAW filter is directly affected.
Disclosure of Invention
In view of the above, the present application provides a BAW filter, a method for manufacturing the same, an integrated circuit, and an electronic device, wherein the method comprises the following steps:
a BAW filter, the BAW filter comprising:
a substrate having a first recess with a body recess region and a plurality of extended recess regions extending outwardly based on the body recess region;
the barrier layer is positioned on one side of the substrate and is provided with a second groove penetrating through the barrier layer, and the orthographic projection of the second groove on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate;
the front projection of the first electrode layer on the plane of the substrate at least completely covers the front projection of the second groove on the plane of the substrate;
the front projection of the piezoelectric layer on the plane of the substrate at least completely covers the front projection of the first electrode layer on the plane of the substrate;
the second electrode layer is positioned on one side of the piezoelectric layer, which is away from the substrate, and the orthographic projection of the second electrode layer on the plane of the substrate overlaps with the orthographic projection of the main body groove region on the plane of the substrate;
the BAW filter further includes: and the release hole penetrates through the piezoelectric layer and the barrier layer, is positioned on one side of the extension groove area far away from the main body groove area, and is communicated with the main body groove area through the extension groove area.
Preferably, in the BAW filter, a distance between the bottom of the first groove and the first electrode layer is 1um to 10um.
Preferably, in the BAW filter, the thickness of the blocking layer is 1um to 4um.
Preferably, in the BAW filter, the orthographic projection shape of the release hole on the plane of the substrate is circular or square.
Preferably, in the BAW filter, the extension length of the extension groove region is 2um-100um.
The application also provides a preparation method of the BAW filter, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first groove, and the first groove is provided with a main body groove area and a plurality of extending groove areas which extend outwards based on the main body groove area;
forming a barrier layer on one side of the substrate, wherein the barrier layer is provided with a second groove penetrating through the barrier layer, and the orthographic projection of the second groove on the plane of the substrate overlaps with the orthographic projection of the main body groove area on the plane of the substrate;
forming a first electrode layer on one side of the barrier layer, which is away from the substrate, wherein the orthographic projection of the first electrode layer on the plane of the substrate at least completely covers the orthographic projection of the second groove on the plane of the substrate;
forming a piezoelectric layer on one side of the first electrode layer, which is far away from the substrate, wherein the orthographic projection of the piezoelectric layer on the plane of the substrate at least completely covers the orthographic projection of the first electrode layer on the plane of the substrate;
forming a second electrode layer on one side of the piezoelectric layer away from the substrate, wherein the orthographic projection of the second electrode layer on the plane of the substrate overlaps with the orthographic projection of the main body groove region on the plane of the substrate;
and forming a release hole penetrating through the piezoelectric layer and the barrier layer, wherein the release hole is positioned on one side of the extension groove region away from the main body groove region, and the release hole is communicated with the main body groove region through the extension groove region.
Preferably, in the above manufacturing method of a BAW filter, the forming a barrier layer on one side of the substrate includes:
forming a filling layer, wherein the filling layer is provided with a first part and a second part, the first part fills the main body groove area and the extension groove area, the second part is positioned on one side of the first part, which is away from the substrate, and the orthographic projection of the second part on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate;
the barrier layer is formed, the barrier layer is provided with a second groove penetrating through the barrier layer, the orthographic projection of the second groove on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate, the surface of one side of the barrier layer, which is away from the substrate, and the surface of one side of the filling layer, which is away from the substrate, are positioned on the same horizontal plane, and the second part is filled with the second groove.
Preferably, in the above method for manufacturing a BAW filter, after the formation of the release hole, the method for manufacturing a BAW filter further includes:
and removing the filling layer.
The application also provides an integrated circuit comprising a BAW filter as claimed in any one of the preceding claims.
The application also provides an electronic device comprising a BAW filter as described in any one of the preceding claims;
or alternatively, the first and second heat exchangers may be,
the electronic device comprises the integrated circuit.
Compared with the prior art, the application has the following beneficial effects:
the BAW filter provided by the application comprises: a substrate having a first recess with a body recess region and a plurality of extended recess regions extending outwardly based on the body recess region; the barrier layer is positioned on one side of the substrate and is provided with a second groove penetrating through the barrier layer, and the orthographic projection of the second groove on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate; the front projection of the first electrode layer on the plane of the substrate at least completely covers the front projection of the second groove on the plane of the substrate; the front projection of the piezoelectric layer on the plane of the substrate at least completely covers the front projection of the first electrode layer on the plane of the substrate; the second electrode layer is positioned on one side of the piezoelectric layer, which is away from the substrate, and the orthographic projection of the second electrode layer on the plane of the substrate overlaps with the orthographic projection of the main body groove region on the plane of the substrate; the BAW filter further includes: and the release hole penetrates through the piezoelectric layer and the barrier layer, is positioned on one side of the extension groove area far away from the main body groove area, and is communicated with the main body groove area through the extension groove area. The main body groove area in the BAW filter is a working area, the release hole is positioned on one side of the extended groove area away from the main body groove area, namely, the release hole is positioned in a non-working area of the BAW filter, so that the problem of alignment of the release hole and the working area is not required to be considered, the design difficulty of the BAW filter is reduced, the morphology of the release hole is not required to be strictly controlled under the design, the process difficulty is reduced, and the anti-power capability is improved to a certain extent.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a BAW filter according to an embodiment of the present application;
FIG. 2 is a schematic top view of a first groove according to an embodiment of the present application;
fig. 3 is a schematic flow chart of a method for manufacturing a BAW filter according to an embodiment of the present application;
fig. 4 to 10 are schematic structural diagrams of parts corresponding to the manufacturing method of the BAW filter shown in fig. 3.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the application will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a BAW filter provided by an embodiment of the present application, referring to fig. 2, fig. 2 is a schematic plan view of a first groove provided by an embodiment of the present application, where the BAW filter provided by the embodiment of the present application includes:
a base 11, the base 11 having a first groove 12, the first groove 12 having a body groove region 12a and a plurality of extension groove regions 12b extending outwardly based on the body groove region 12 a.
A barrier layer 13 located on one side of the substrate 11, the barrier layer 13 having a second recess penetrating the barrier layer 13, the orthographic projection of the second recess on the plane of the substrate 11 overlapping the orthographic projection of the main recess region 12a on the plane of the substrate 11.
The front projection of the first electrode layer 14 on the plane of the substrate 11 covers at least the front projection of the second groove on the plane of the substrate 11 completely, the first electrode layer 14 being located on the side of the barrier layer 13 facing away from the substrate 11.
The front projection of the piezoelectric layer 15 on the plane of the substrate 11 covers at least the front projection of the first electrode layer 14 on the plane of the substrate 11, the piezoelectric layer 15 being located on the side of the first electrode layer 14 facing away from the substrate 11.
It should be noted that the piezoelectric layer 15 completely covers the first electrode layer 14, and the front projection of the piezoelectric layer 15 on the plane of the substrate 11 completely covers the front projection of the substrate 11 on the plane of the substrate 11.
And a second electrode layer 16 positioned on one side of the piezoelectric layer 15 away from the substrate 11, wherein the orthographic projection of the second electrode layer 16 on the plane of the substrate 11 overlaps with the orthographic projection of the main body groove region 12a on the plane of the substrate 11.
It should be noted that, the second electrode layer 16 does not cover the piezoelectric layer 15 completely, and the coverage area and coverage size of the second electrode layer 16 may be designed based on the design requirement of the working area of the actual BAW filter, which is only required to ensure that the orthographic projection of the second electrode layer 16 on the plane of the substrate 11 overlaps with the orthographic projection of the main body groove region 12a on the plane of the substrate 11.
The BAW filter further includes: a release hole 17 penetrating the piezoelectric layer 15 and the barrier layer 13, the release hole 17 being located on a side of the extension groove region 12b away from the body groove region 12a, the release hole 17 communicating with the body groove region 12a through the extension groove region 12b.
Specifically, in this embodiment, the main body groove region 12a of the BAW filter is a working region of the BAW filter, and the release hole 17 is located at a side of the extended groove region 12b away from the main body groove region 12a, that is, the release hole 17 is located in a non-working region of the BAW filter, so that the problem of alignment of the release hole 17 and the working region is not required to be considered, the design difficulty of the BAW filter is reduced, the morphology of the release hole 17 is not required to be strictly controlled under the design, the process difficulty is reduced, and the anti-power capability is improved to a certain extent.
Alternatively, in another embodiment of the present application, the distance between the bottom of the first recess 12 and the first electrode layer 14 is 1um-10um.
Specifically, in this embodiment, the area between the bottom of the first recess 12 and the first electrode layer 14 is the cavity area 100 of the BAW filter, that is, the depth of the cavity area 100 is 1um-10um, the uniformity is required to be less than 5%, and the depth of the cavity area 100 may be 1um or 3.5um or 6um or 10um, etc.
Alternatively, in another embodiment of the present application, the thickness of the barrier layer 13 is 1um to 4um.
Specifically, in this embodiment, the thickness of the barrier layer 13 may be 1um, 2.5um, 3um, 4um, etc., and the uniformity is required to be less than 5%, and the material may be POLY, SIN, etc.
Alternatively, in another embodiment of the present application, the orthographic projection of the release hole 17 on the plane of the substrate 11 is circular or square or annular or other irregular pattern.
Specifically, in this embodiment, the opening size of the release hole 17 is 10um to 100um, and when the orthographic projection shape of the release hole 17 on the plane of the substrate 11 is a circle, the diameter of the release hole 17 is 10um to 100um; when the orthographic projection shape of the release hole 17 on the plane of the substrate 11 is square, the side length of the release hole 17 is 10um-100um.
That is, since the release hole 17 is located in the non-operating region of the BAW filter, the shape of the release hole 17 in the embodiment of the present application does not need to be limited additionally, and it is obvious that the process difficulty of the BAW filter can be further reduced.
Alternatively, in another embodiment of the present application, the extension length of the extension groove region 12b is 2um to 100um.
Specifically, in this embodiment, since the release hole 17 is located at a side of the extended groove region 12b away from the main body groove region 12a, and the extended length of the extended groove region 12b is 2um-100um, which means that the release hole 17 is located in a region 2um-100um away from the working region, that is, the release hole 17 is located in a non-working region of the BAW filter, the problem that the release hole 17 is aligned with the working region does not need to be considered, so that the design difficulty of the BAW filter is reduced, the morphology of the release hole 17 does not need to be strictly controlled under the design, the process difficulty is reduced, and the antistatic capability is improved to a certain extent.
Based on the foregoing embodiments of the present application, in another embodiment of the present application, a method for manufacturing a BAW filter is further provided, and referring to fig. 3, fig. 3 is a schematic flow chart of a method for manufacturing a BAW filter provided by the embodiment of the present application, where the method for manufacturing a BAW filter provided by the embodiment of the present application includes:
s101: as shown in fig. 2 and 4, a substrate 11 is provided, the substrate 11 having a first groove 12, the first groove 12 having a body groove region 12a and a plurality of extension groove regions 12b extending outwardly based on the body groove region 12 a.
Specifically, in this step, a substrate 11 is provided, and the substrate 11 is subjected to a cavity region 100 etching process to form the first recess 12, that is, the formation of the first recess 12 is mainly designed based on the cavity region 100 of the BAW filter.
S102: as shown in fig. 5 and 6, a barrier layer 13 is formed on one side of the substrate 11, and the barrier layer 13 has a second groove penetrating the barrier layer 13, where the orthographic projection of the second groove on the plane of the substrate 11 overlaps with the orthographic projection of the main body groove region 12a on the plane of the substrate 11.
Specifically, one implementation manner of step S102 in this step is:
as shown in fig. 5, a filling layer 18 is formed, the filling layer 18 having a first portion 18a and a second portion 18b, the first portion 18a filling the body recess region 12a and the extension recess region 12b, the second portion 18b being located on a side of the first portion 18a facing away from the substrate 11, an orthographic projection of the second portion 18b onto a plane of the substrate 11 overlapping an orthographic projection of the body recess region 12a onto the plane of the substrate 11.
As shown in fig. 6, the barrier layer 13 is formed, the barrier layer 13 has a second groove penetrating through the barrier layer 13, the orthographic projection of the second groove on the plane of the substrate 11 overlaps with the orthographic projection of the main groove region 12a on the plane of the substrate 11, the surface of the barrier layer 13 on the side facing away from the substrate 11 is on the same level as the surface of the filling layer 18 on the side facing away from the substrate 11, and the second portion 18b fills the second groove.
The thickness of the filling layer 18 is 1um-10um, that is, the total thickness of the first portion 18a and the second portion 18b is 1um-10um, which is matched with the depth of the cavity region 100 to be designed, the uniformity of the filling layer 18 is required to be less than 5%, and the material of the filling layer 18 may be PSG or BPSG.
That is, after the entire filling layer 18 is formed, the filling layer 18 is partially etched outside the working area based on photolithography, etching, photoresist removing, and the like, to form the filling layer 18 formed by combining the first portion 18a and the second portion 18 b.
The thickness of the barrier layer 13 is 1um-4um, the uniformity of the barrier layer 13 is required to be less than 5%, the material of the barrier layer 13 can be POLY or SIN, and the loss of the barrier layer 13 in the subsequent release process is required to be less than 500 angstroms.
Since the surface of the side of the barrier layer 13 facing away from the substrate 11 and the surface of the side of the filling layer 18 facing away from the substrate 11 need to be located at the same level, in some cases, the barrier layer 13 may be further polished to expose the surface of the filling layer 18 of the second portion 18b, and may be polished slightly further down to 0um-2um in order to ensure the feasibility of the process.
S103: as shown in fig. 7, a first electrode layer 14 is formed on a side of the barrier layer 13 facing away from the substrate 11, and the orthographic projection of the first electrode layer 14 on the plane of the substrate 11 at least completely covers the orthographic projection of the second recess on the plane of the substrate 11.
Specifically, in this step, a whole first electrode layer 14 is first formed, and then the first electrode layer 14 is subjected to patterning etching based on photolithography, etching, photoresist removal, and other processes, so as to form the desired first electrode layer 14.
S104: as shown in fig. 8, a piezoelectric layer 15 is formed on the side of the first electrode layer 14 facing away from the substrate 11, and the front projection of the piezoelectric layer 15 on the plane of the substrate 11 at least completely covers the front projection of the first electrode layer 14 on the plane of the substrate 11.
S105: as shown in fig. 8 and 9, a second electrode layer 16 is formed on the side of the piezoelectric layer 15 facing away from the substrate 11, and the orthographic projection of the second electrode layer 16 on the plane of the substrate 11 overlaps with the orthographic projection of the main body groove region 12a on the plane of the substrate 11.
Specifically, in step S104 and step S105, a whole piezoelectric layer 15 and a second electrode layer 16 are first formed in sequence, and then the second electrode layer 16 is patterned and etched based on photolithography, etching, photoresist stripping, and other processes, so as to form the required second electrode layer 16.
S106: as shown in fig. 10, a release hole 17 penetrating the piezoelectric layer 15 and the barrier layer 13 is formed, the release hole 17 being located on a side of the extension groove region 12b away from the main body groove region 12a, the release hole 17 communicating with the main body groove region 12a through the extension groove region 12b.
Optionally, in another embodiment of the present application, as shown in fig. 1, after the formation of the release hole 17, the method for manufacturing the BAW filter further includes:
the filler layer 18 is removed.
Specifically, in this embodiment, after the filling layer 18 is removed, the BAW filter structure shown in fig. 1 is formed, where the main body groove region 12a in the BAW filter is a working region, the release hole 17 is located on a side of the extending groove region 12b away from the main body groove region 12a, that is, the release hole 17 is located in a non-working region of the BAW filter, so that the problem of alignment of the release hole 17 and the working region is not needed to be considered, the design difficulty of the BAW filter is reduced, the morphology of the release hole 17 is not needed to be strictly controlled under the design, the process difficulty is reduced, and the anti-power capability is improved to a certain extent.
Based on the above embodiments of the present application, in another embodiment of the present application, there is also provided an integrated circuit, which includes the BAW filter described in the above embodiments.
Based on the above embodiments of the present application, in another embodiment of the present application, there is also provided an electronic device, which includes the BAW filter described in the above embodiments.
Or alternatively, the first and second heat exchangers may be,
the electronic device comprises the integrated circuit according to the above embodiment.
The above description has been made in detail of a BAW filter, a method for manufacturing the same, an integrated circuit and an electronic device, and specific examples are applied to illustrate the principles and embodiments of the present application, and the above examples are only used to help understand the method and core ideas of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A BAW filter, the BAW filter comprising:
a substrate having a first recess with a body recess region and a plurality of extended recess regions extending outwardly based on the body recess region;
the barrier layer is positioned on one side of the substrate and is provided with a second groove penetrating through the barrier layer, and the orthographic projection of the second groove on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate;
the front projection of the first electrode layer on the plane of the substrate at least completely covers the front projection of the second groove on the plane of the substrate;
the front projection of the piezoelectric layer on the plane of the substrate at least completely covers the front projection of the first electrode layer on the plane of the substrate;
the second electrode layer is positioned on one side of the piezoelectric layer, which is away from the substrate, and the orthographic projection of the second electrode layer on the plane of the substrate overlaps with the orthographic projection of the main body groove region on the plane of the substrate;
the BAW filter further includes: and the release hole penetrates through the piezoelectric layer and the barrier layer, is positioned on one side of the extension groove area far away from the main body groove area, and is communicated with the main body groove area through the extension groove area.
2. The BAW filter of claim 1, wherein a distance between a bottom of the first recess and the first electrode layer is 1um-10um.
3. The BAW filter of claim 1, wherein the barrier layer has a thickness of 1um-4um.
4. BAW filter as claimed in claim 1, characterized in that the forward projection of the release aperture on the plane of the substrate is circular or square in shape.
5. The BAW filter of claim 4, wherein the extended recess region has an extension length of 2um-100um.
6. A method for manufacturing a BAW filter, the method comprising:
providing a substrate, wherein the substrate is provided with a first groove, and the first groove is provided with a main body groove area and a plurality of extending groove areas which extend outwards based on the main body groove area;
forming a barrier layer on one side of the substrate, wherein the barrier layer is provided with a second groove penetrating through the barrier layer, and the orthographic projection of the second groove on the plane of the substrate overlaps with the orthographic projection of the main body groove area on the plane of the substrate;
forming a first electrode layer on one side of the barrier layer, which is away from the substrate, wherein the orthographic projection of the first electrode layer on the plane of the substrate at least completely covers the orthographic projection of the second groove on the plane of the substrate;
forming a piezoelectric layer on one side of the first electrode layer, which is far away from the substrate, wherein the orthographic projection of the piezoelectric layer on the plane of the substrate at least completely covers the orthographic projection of the first electrode layer on the plane of the substrate;
forming a second electrode layer on one side of the piezoelectric layer away from the substrate, wherein the orthographic projection of the second electrode layer on the plane of the substrate overlaps with the orthographic projection of the main body groove region on the plane of the substrate;
and forming a release hole penetrating through the piezoelectric layer and the barrier layer, wherein the release hole is positioned on one side of the extension groove region away from the main body groove region, and the release hole is communicated with the main body groove region through the extension groove region.
7. The method of manufacturing a BAW filter of claim 6, wherein forming a barrier layer on one side of the substrate comprises:
forming a filling layer, wherein the filling layer is provided with a first part and a second part, the first part fills the main body groove area and the extension groove area, the second part is positioned on one side of the first part, which is away from the substrate, and the orthographic projection of the second part on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate;
the barrier layer is formed, the barrier layer is provided with a second groove penetrating through the barrier layer, the orthographic projection of the second groove on the plane of the substrate is overlapped with the orthographic projection of the main body groove area on the plane of the substrate, the surface of one side of the barrier layer, which is away from the substrate, and the surface of one side of the filling layer, which is away from the substrate, are positioned on the same horizontal plane, and the second part is filled with the second groove.
8. The method of manufacturing a BAW filter of claim 7, wherein after the release holes are formed, the method further comprises:
and removing the filling layer.
9. An integrated circuit, characterized in that it comprises a BAW filter as claimed in any one of claims 1-5.
10. An electronic device, characterized in that it comprises a BAW filter as claimed in any one of claims 1-5;
or alternatively, the first and second heat exchangers may be,
the electronic device comprising the integrated circuit of claim 9.
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| CN117040478B (en) | 2024-01-30 |
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