CN117038712B - Two-dimensional InGas 3 (ZnO) m Superlattice nano-belt and preparation method thereof - Google Patents
Two-dimensional InGas 3 (ZnO) m Superlattice nano-belt and preparation method thereof Download PDFInfo
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- 239000002127 nanobelt Substances 0.000 title claims abstract description 66
- 240000002329 Inga feuillei Species 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000002074 nanoribbon Substances 0.000 claims abstract description 34
- 239000002243 precursor Substances 0.000 claims abstract description 33
- 229910007541 Zn O Inorganic materials 0.000 claims abstract description 32
- 239000011701 zinc Substances 0.000 claims abstract description 30
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 19
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003381 stabilizer Substances 0.000 claims abstract description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 230000032683 aging Effects 0.000 claims abstract description 3
- 238000002156 mixing Methods 0.000 claims abstract description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 12
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 238000001237 Raman spectrum Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000004654 kelvin probe force microscopy Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000003760 magnetic stirring Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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Abstract
The invention provides a two-dimensional InGaInG 3 (ZnO) m The superlattice nano belt and the preparation method thereof, the preparation steps comprise mixing an indium source, a gallium source and a zinc source, dissolving In an organic solvent, adding a stabilizer for reaction, and aging In a dark place to obtain an In-Ga-Zn-O precursor solution; coating the In-Ga-Zn-O precursor solution with Al 2 O 3 Drying the ZnO nanobelt surface of the substrate, and then carrying out heat treatment at 800-1000 ℃ for 5-60min to obtain two-dimensional InGas 3 (ZnO) m Superlattice nanoribbons. Because of the different growth directions of the ZnO nanobelts, in and Ga atoms have different diffusion forms In ZnO, and the extremely low content of In and Ga elements greatly changes the structure of the ZnO nanobelts, the prepared novel 2D material has different properties from the ZnO nanobelts In the aspects of structure, electricity, optics and the like.
Description
Technical Field
The invention belongs to the technical field of semiconductor preparation, and particularly relates to a two-dimensional InGaS 3 (ZnO) m Superlattice nanobelts and methods of making the same.
Background
ZnO has wide application in photosensitive sensing, gas sensing, pressure sensing and other aspects due to the advantages of wide band gap (3.37 eV) and large exciton binding energy (60 meV), and the formation of superlattice is similar to embedding a large number of micro heterojunctions in atomic layer, so that the acousto-optic and other characteristics of the material can be changed; the preparation of semiconductors with superlattice structures can therefore find a variety of applications in electronics and optoelectronics. Early superlattice material studies showed that In 2 O 3 (ZnO) m In the superlattice system, when ZnO is alloyed with a large amount of In, in atoms enter ZnO In a certain direction, and octahedral InO is formed In the material 2 - An aligned layered structure. In 2004, wang group achieved In for the first time by chemical vapor deposition 2 O 3 (ZnO) m Preparation of superlattice nanowires, but not extending the superlattice nanowires to two-dimensional nanomaterials; german team W.Mader et al for extended superlattice System InMO 3 (ZnO) m The crystal structure (where M is Ga, fe, sn, etc.) is elaborated, but no nano-sized superlattice material is grown.
Among the various superlattice types, indium Gallium Zinc Oxide (IGZO) has received increasing attention for decades due to its advantage In transparent conductive films and high performance In thermal electric fields, and In IGZO, ga atoms enter ZnO to form triangular bipyramids with surrounding O atoms, distributed In the Ga/Zn-O layer, as opposed to just Ga atoms entering ZnO. The two-dimensional IGZO superlattice nanoribbon has advantages of convenience in setting up devices, high specific surface area and excellent electron transport system compared with the zero-dimensional nanoparticles and the one-dimensional nanowires, but the method for synthesizing the superlattice material by CVD has difficulty in realizing reasonable control of material characteristics, such as variation of nanoribbon width, variation of dopant concentration and variation of dopant elements, besides the need of maintaining high yield of the superlattice nanoribbon.
Disclosure of Invention
The invention aims to solve the technical problems that: providing a two-dimensional InGaP 3 (ZnO) m The superlattice nano belt and the preparation method thereof are used for solving the technical problems of poor conductive performance and unstable materials.
In order to achieve the above purpose, the invention adopts the following technical scheme: providing a two-dimensional InGaP 3 (ZnO) m The preparation method of the superlattice nano-belt comprises the following steps:
s1: mixing an indium source, a gallium source and a zinc source, dissolving In an organic solvent, adding a stabilizer, stirring at 65-75 ℃ for 1-1.5h, and finally aging at room temperature In a dark place for 22-26h to obtain an In-Ga-Zn-O precursor solution; the molar ratio of In, ga and Zn elements In the indium source, the gallium source and the zinc source is 5:5:4-5;
s2: al with ZnO nanoribbon 2 O 3 The inclination angle of the substrate is set to be 10-20 degrees, then the In-Ga-Zn-O precursor solution is covered on the surface of the ZnO nano-belt, the ZnO nano-belt is dried for 20-30min at 150-170 ℃, and then the dried ZnO nano-belt is placed at 800-1000 ℃ for heat treatment for 5-60min, thus obtaining the two-dimensional InGas 3 (ZnO) m Superlattice nanoribbons.
Based on the technical scheme, the invention can also be improved as follows:
further toThe indium source is In (NO) 3 ) 3 ·xH 2 O, ga (NO) as gallium source 3 ) 3 ·xH 2 O, zinc source is (CH) 3 COO) 2 Zn·2H 2 O。
Further, the molar ratio of In, ga and Zn elements In the indium source, gallium source and zinc source is 5:5:4.
further, the organic solvent is ethylene glycol methyl ether, and the stabilizer is ethanolamine.
Further, the volume ratio of the organic solvent to the stabilizer is 1000-2000:1.
further, the rotation speed during stirring in the step S1 is 350-450r/min.
Further, the concentration of the In-Ga-Zn-O precursor solution is 0.005-0.05mol/L.
Further, the heat treatment temperature was 900℃and the heat treatment time was 15min.
The invention also discloses a two-dimensional InGaP 3 (ZnO) m Two-dimensional InGas prepared by superlattice nano-belt preparation method 3 (ZnO) m Superlattice nanoribbons.
Based on the technical scheme, the invention can also be improved as follows:
further, two-dimensional InGas 3 (ZnO) m The superlattice nanoribbon has the following dimensions: 5-40 μm long, 500nm-5 μm wide and 10-50nm thick.
The invention has the following beneficial effects:
1. according to the invention, from the material, a high-temperature solid diffusion method is adopted to introduce few In and Ga elements into the ZnO two-dimensional material, so that a superlattice is formed while the basic properties of a main body or a ZnO nano-belt are maintained, the In and Ga elements are modified on the surface of the ZnO nano-belt In a near-atomic-string mode, the morphological structure is unique and novel, and the xps characterization result shows that the superlattice nano-belt has a high concentration of oxygen vacancies, and has a dense and inseparable relationship with the formation of the superlattice.
2. From the material principle structure, the exposed broad surface of the ZnO nano-belt is a (01-10) crystal face with active electron movement, so that the work function of the ZnO nano-belt is about 4.2eV, electrons are easier to escape from the exposed crystal face, and now, the electron escape of the ZnO nano-belt In the (01-10) crystal face is blocked due to the fact that In and Ga atoms are embedded In the shallow surface of the nano-belt, and the work function of the superlattice nano-belt is improved to about 4.6eV by KPFM characterization.
Drawings
FIG. 1 is a two-dimensional InGaP 3 (ZnO) m STEM diagram of superlattice nanoribbon;
FIG. 2 is a two-dimensional InGaP 3 (ZnO) m TEM image of superlattice nanoribbons;
FIG. 3 is a two-dimensional InGaP 3 (ZnO) m EDS diagram of superlattice nano-belt;
FIG. 4 is a two-dimensional InGaP 3 (ZnO) m XPS element scan of superlattice nano belt;
FIG. 5 is a two-dimensional InGaP 3 (ZnO) m Raman spectrum contrast diagram of superlattice nano-band and undoped ZnO nano-band;
FIG. 6 is a two-dimensional InGaP 3 (ZnO) m New peak-to-peak raman spectrum of superlattice nanobelt;
FIG. 7 is a two-dimensional InGaP 3 (ZnO) m KPFM spectrum of superlattice nano belt;
FIG. 8 is a two-dimensional InGaP 3 (ZnO) m And a work function change statistical diagram before and after doping the superlattice nano-belt.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are provided for the purpose of illustrating the invention and are not intended to limit the scope of the invention, and the specific conditions are not identified in the examples, or are suggested by the manufacturer, or the reagents or apparatus used are not identified in the manufacturer, and are conventional products available commercially.
Example 1:
two-dimensional InGas 3 (ZnO) m The preparation method of the superlattice nano-belt comprises the following steps:
s1: into a beaker was added 0.0376g of In (NO 3 ) 3 ·4H 2 O、0.032g Ga(NO 3 ) 3 ·3H 2 O、0.0219g(CH 3 COO) 2 Zn·2H 2 O and 10mL of ethylene glycol methyl ether, then transferring 6 mu L of ethanolamine by using a pipetting gun, placing the ethanolamine in a beaker as a stabilizer, adding a magnetic stirring rotor into the beaker, sealing the beaker by using high-temperature sealing glue and an adhesive tape, placing the sealed beaker in a constant-temperature magnetic stirrer, setting the stirring temperature to be 70 ℃, the rotating speed to be 400r/min, and the stirring time to be 1h; after the stirring is completed, the solution is aged for 24 hours at room temperature In a dark place, and then the In-Ga-Zn-O precursor solution with the concentration of 0.01mol/L can be obtained;
s2: al with ZnO nanoribbon 2 O 3 The inclination angle of the substrate is set to be 15 degrees, then 12 mu L of In-Ga-Zn-O precursor solution is sucked by a liquid-transferring gun, then the In-Ga-Zn-O precursor solution is vertically dripped on the surface of the ZnO nano-belt, after the In-Ga-Zn-O precursor solution slowly covers the surface of the ZnO nano-belt completely, the ZnO nano-belt is put into a 160 ℃ oven for drying for 25 minutes, and the main purpose of drying is to remove the solvent In the In-Ga-Zn-O precursor solution, so that the In-Ga-Zn-O precursor can be fixed on the surface of the ZnO nano-belt, and the precursor is beneficial to solid diffusion during the subsequent heat treatment; putting the dried ZnO nanobelt into a porcelain boat, sending into a 950 ℃ tubular furnace, and performing heat treatment for 15min In an air atmosphere to enable In and Ga elements In the In-Ga-Zn-O precursor to diffuse into ZnO to replace Zn atoms, thereby forming novel two-dimensional InGas 3 (ZnO) m The superlattice nano belt material comprises the following dimensions: 30 μm long, 2 μm wide and 30nm thick.
Example 2:
two-dimensional InGas 3 (ZnO) m The preparation method of the superlattice nano-belt comprises the following steps:
s1: into a beaker was added 0.0376g of In (NO 3 ) 3 ·3H 2 O、0.032g Ga(NO 3 ) 3 ·2H 2 O、0.0219g(CH 3 COO) 2 Zn·2H 2 O and 10mL of ethylene glycol methyl ether, then transferring 10 mu L of ethanolamine by using a pipette to be placed in a beaker to be used as a stabilizer, then adding a magnetic stirring rotor into the beaker, sealing the beaker by using high-temperature sealing glue and an adhesive tape, placing the sealed beaker in a constant-temperature magnetic stirrer, and settingStirring temperature is 65 ℃, rotating speed is 450r/min, and stirring time is 1.5h; after the stirring is completed, the solution is aged for 26 hours at room temperature In a dark place, and then an In-Ga-Zn-O precursor solution with the concentration of 0.015mol/L can be obtained;
s2: al with ZnO nanoribbon 2 O 3 The inclination angle of the substrate is set to be 10 degrees, then a pipetting gun is used for sucking 10 mu L of In-Ga-Zn-O precursor solution, then the In-Ga-Zn-O precursor solution is vertically dripped on the surface of the ZnO nanobelt, after the In-Ga-Zn-O precursor solution slowly covers the surface of the ZnO nanobelt completely, the ZnO nanobelt is put into a baking oven at 150 ℃ for baking for 30 minutes, and the main purpose of baking is to remove the solvent In the In-Ga-Zn-O precursor solution, so that the In-Ga-Zn-O precursor can be fixed on the surface of the ZnO nanobelt, and the precursor is beneficial to solid diffusion during subsequent heat treatment; putting the dried ZnO nanobelt into a porcelain boat, sending into a tubular furnace at 1000 ℃, and performing heat treatment for 5min In an air atmosphere to enable In and Ga elements In an In-Ga-Zn-O precursor to diffuse into ZnO to replace Zn atoms, thereby forming novel two-dimensional InGas 3 (ZnO) m The superlattice nano belt material comprises the following dimensions: 5 μm long, 500nm wide and 10nm thick.
Example 3:
two-dimensional InGas 3 (ZnO) m The preparation method of the superlattice nano-belt comprises the following steps:
s1: into a beaker was added 0.0376g of In (NO 3 ) 3 ·3H 2 O、0.032g Ga(NO 3 ) 3 ·3H 2 O、0.0219g(CH 3 COO) 2 Zn·2H 2 O and 10mL of ethylene glycol methyl ether, then using a pipetting gun to remove 5 mu L of ethanolamine, placing the ethanolamine in a beaker as a stabilizer, then adding a magnetic stirring rotor into the beaker, sealing the beaker by using high-temperature sealing glue and an adhesive tape, placing the sealed beaker in a constant-temperature magnetic stirrer, setting the stirring temperature at 75 ℃, the rotating speed at 350r/min and the stirring time at 1h; after the stirring is completed, the solution is aged for 22 hours at room temperature In a dark place, and then an In-Ga-Zn-O precursor solution with the concentration of 0.012mol/L can be obtained;
s2: al with ZnO nanoribbon 2 O 3 Tilting of the substrateThe inclined angle is set to be 15 degrees, then a pipetting gun is used for sucking 15 mu L of In-Ga-Zn-O precursor solution, then the In-Ga-Zn-O precursor solution is vertically dripped on the surface of a ZnO nano-belt with the inclined angle of 20 degrees, after the surface of the ZnO nano-belt is slowly covered by the In-Ga-Zn-O precursor solution, the ZnO nano-belt is put into a baking oven with the temperature of 170 ℃ for baking for 20 minutes, and the main purpose of baking is to remove the solvent In the In-Ga-Zn-O precursor solution, so that the In-Ga-Zn-O precursor can be fixed on the surface of the ZnO nano-belt, and the precursor is beneficial to solid diffusion during subsequent heat treatment; putting the dried ZnO nanobelt into a porcelain boat, sending into a tubular furnace at 800 ℃, and performing heat treatment for 60min In an air atmosphere to enable In and Ga elements In an In-Ga-Zn-O precursor to diffuse into ZnO to replace Zn atoms, thereby forming novel two-dimensional InGas 3 (ZnO) m The superlattice nano belt material comprises the following dimensions: 40 μm long, 1 μm wide and 50nm thick.
Analysis of results:
FIG. 1 is a two-dimensional InGaP 3 (ZnO) m The STEM diagram of the superlattice nanoribbons shows that the IGZO superlattice is very well formed, and almost each nanoribbon has superlattice formed thereon, and the inversion domain boundaries peculiar to the superlattice doped into ZnO, including the inversion interfaces of IDB parallel to the growth direction and IPB having a certain inclination angle, can be clearly seen from fig. 1 (b).
FIG. 2 is a two-dimensional InGaP 3 (ZnO) m TEM image of superlattice nanoribbon it can be seen from FIG. 2 (c) that the growth direction of the nanoribbon is [11-20 ]]The superlattice may be along [11-20 ]]In-O monoatomic layers are formed on the surfaces of the nano-strips (01-10), ga elements are distributed between In-O and Zn-O, the Zn-Zn atomic layer spacing of pure ZnO In the c-axis direction of the nano-strips is 0.26nm, and the layer spacing of the successful entering part of the superlattice is 0.31nm, which accords with the layer spacing of the successful doping of the IGZO superlattice into ZnO, which indicates that the IGZO superlattice nano-strip material is successfully prepared. In the superlattice formation process, in element enters ZnO In an octahedral form by heating to 900 ℃ to form IDB, so that tetrahedra of ZnO around the IDB are reversed, and In atoms and Ga atoms distributed between In-O/Zn-O layers are orderly arranged to be fixedThe inverted ZnO tetrahedra is inverted again by the IPB of the tilt angle.
FIG. 3 is a two-dimensional InGaP 3 (ZnO) m As can be seen from the EDS results, the superlattice nanobelt has a Zn content of about 39.1%, an O content of about 56.7%, an In content of about 2.4%, and a Ga content of about 1.8%.
FIG. 4 is a two-dimensional InGaP 3 (ZnO) m XPS elemental scans of superlattice nanobelts, with binding energies of Zn 2p3/2 and Zn 2p1/2 peaks at 1021.5eV and 1044.6eV, respectively. The energy difference between the Zn 2p peaks was 23.1eV, consistent with the reference value of 22.97 eV. The O1 s peak is very asymmetric and the component at low BE (530 eV) is lattice O 2- Typical composition of ions, while the composition under medium BE (531.8 eV) and O in the oxygen deficient region in ZnO matrix 2- Ion correlation, indicating InGaO 3 (ZnO) m The nanoribbons have a high concentration of oxygen vacancies. The two peaks at 445.1eV and 452.7eV correspond to the electron states of In 3d3/2 and In 3d5/2, respectively, with an energy difference between the In 3d peaks of 7.5eV; this is very consistent with the standard value of 7.5eV, and the peak of Ga 3d is at 18eV, which is close to the standard value of 18.4eV, again confirming that the Ga dopant is incorporated into the nanoribbon and forms Ga-O bonds instead of In.
FIG. 5 is a two-dimensional InGaP 3 (ZnO) m Raman spectrum contrast diagram of superlattice nano-band and undoped ZnO nano-band, and vibration mode of undoped ZnO nano-band mainly comprises E 2 (high)-E 2 (low)、A 1 (TO)、E 2 (high)、A 1 (LO) and the like, respectively corresponding to 333cm in the Raman spectrum -1 ，378cm -1 ，436cm -1 ，581cm -1 A peak. In addition, in InGaO 3 (ZnO) m Has a Raman spectrum (red curve) of 417cm -1 、577cm -1 、645cm -1 And 750cm -1 Four peaks, which belong to the base Al 2 O 3 Whereas the substrate peak is not apparent on ZnO Raman spectrum, because many nanoribbons are overwhelmed and part of nanoribbons are agglomerated when the precursor solution is dropped, thereby causing Al 2 O 3 The substrate is exposed in a larger area, thus in InGaO 3 (ZnO) m Is enhanced.
FIG. 6 is a two-dimensional InGaP 3 (ZnO) m Novel peak-to-peak Raman spectrum of superlattice nano-band, A 1 The peak blue shift of the (LO) mode of vibration is about 4cm -1 (as in fig. 6 (a)), the blue shift may result from strain, confinement of phonons by boundaries, etc., and changes in the force constant caused by defects or impurities; in addition, the Raman spectrum of the superlattice nano band is 631cm -1 There is a weak peak (fig. 6 (b)) that is characteristic raman peak of Ga doping to ZnO, indicating that Ga was successfully doped into ZnO nanoribbons.
FIG. 7 is a two-dimensional InGaP 3 (ZnO) m KPFM spectra of superlattice nanobelts to verify the hypothesis that "free electrons In Zn/In-O and Zn/Ga-O blocks improve work function of the entire zinc oxide matrix", kelvin probe force microscopy was used to map electrostatic structures, doping level changes, or trapped charges, as shown In FIG. 7, inGaO 3 (ZnO) m Nanoribbons and ZnO nanoribbons were gently deposited on Highly Oriented Pyrolytic Graphite (HOPG) substrates as a benchmark for a work function of 4.6eV.
FIG. 8 is a two-dimensional InGaP 3 (ZnO) m Statistical graphs of work function change before and after superlattice nanoribbon doping, fig. 8 shows single ZnO and InGaO 3 (ZnO) m The surface potential of the nanobelt is mapped, and it can be seen that the surface potential of ZnO is higher than that of InGaO 3 (ZnO) m The nanoribbon is about 500mV lower. KPFM characterization proves that the surface work function of the zinc oxide nanobelt prepared by the method is between 4.09 and 4.29eV, which is obviously lower than that of most nanobelts prepared by PVD methods. This may be related to surface defects and vacancies formed by the zinc oxide nanoribbons under high vacuum conditions, inGaO 3 (ZnO) m The average work function value of the nanoribbons varied in the range of 4.5-4.56eV, which is about 4.09-4.29eV higher than the ZnO reference group, indicating InGaO 3 (ZnO) m The introduction of the superlattice makes it more difficult for electrons to leave the material surface because the ZnO nanoribbons are bound to the surface, also corroborating the hypothesis that free electrons In the Zn/In-O and Zn/Ga-O blocks will improve the work function of the overall zinc oxide matrix.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (9)
1. Two-dimensional InGas 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of:
s1: mixing an indium source, a gallium source and a zinc source, dissolving In an organic solvent, adding a stabilizer, stirring at 65-75 ℃ for 1-1.5h, and finally aging at room temperature In a dark place for 22-26h to obtain an In-Ga-Zn-O precursor solution; the molar ratio of In, ga and Zn elements In the indium source, the gallium source and the zinc source is 5:5:4-5; the concentration of the In-Ga-Zn-O precursor solution is 0.005-0.05mol/L;
s2: al with ZnO nanoribbon 2 O 3 The inclination angle of the substrate is set to be 10-20 degrees, then the In-Ga-Zn-O precursor solution is covered on the surface of the ZnO nano-belt, the ZnO nano-belt is dried for 20-30min at 150-170 ℃, and then the dried ZnO nano-belt is placed at 800-1000 ℃ for heat treatment for 5-60min, thus obtaining the two-dimensional InGas 3 (ZnO) m Superlattice nanoribbons; the exposed crystal face of the ZnO nano-belt is (01-10), and the growth direction of the superlattice is [11-20 ]]。
2. The two-dimensional InGa of claim 1 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the indium source is In (NO) 3 ) 3 ·xH 2 O, the gallium source is Ga (NO) 3 ) 3 ·xH 2 O, the zinc source is (CH) 3 COO) 2 Zn·2H 2 O。
3. The two-dimensional InGa of claim 1 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the molar ratio of In, ga and Zn elements In the indium source, the gallium source and the zinc source is 5:5:4.
4. according to claimThe two-dimensional InGaS of claim 1 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the organic solvent is ethylene glycol methyl ether, and the stabilizer is ethanolamine.
5. The two-dimensional InGa of claim 4 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the volume ratio of the organic solvent to the stabilizer is 1000-2000:1.
6. the two-dimensional InGa of claim 1 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the rotating speed during stirring in the step S1 is 350-450r/min.
7. The two-dimensional InGa of claim 1 3 (ZnO) m The preparation method of the superlattice nano-belt is characterized by comprising the following steps of: the heat treatment temperature is 900 ℃, and the heat treatment time is 15min.
8. The two-dimensional InGa of any one of claims 1-7 3 (ZnO) m Two-dimensional InGas prepared by superlattice nano-belt preparation method 3 (ZnO) m Superlattice nanoribbons.
9. The two-dimensional InGa of claim 8 3 (ZnO) m A superlattice nano-ribbon, characterized in that the two-dimensional InGas 3 (ZnO) m The superlattice nanoribbon has the following dimensions: 5-40 μm long, 500nm-5 μm wide and 10-50nm thick.
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