CN117026373A - Abnormal parameter detection method and related equipment in diamond growth process - Google Patents
Abnormal parameter detection method and related equipment in diamond growth process Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 418
- 230000008569 process Effects 0.000 title claims abstract description 373
- 230000002159 abnormal effect Effects 0.000 title claims abstract description 162
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 125
- 239000010432 diamond Substances 0.000 title claims abstract description 125
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 238000004540 process dynamic Methods 0.000 claims abstract description 89
- 238000012544 monitoring process Methods 0.000 claims description 25
- 238000003860 storage Methods 0.000 claims description 10
- 238000011282 treatment Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 8
- 230000005856 abnormality Effects 0.000 claims 2
- 230000026676 system process Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004050 hot filament vapor deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000017899 Spathodea campanulata Nutrition 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012885 constant function Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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Abstract
The application discloses an abnormal parameter detection method and related equipment in the diamond growth process, wherein the method comprises the following steps: receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction; receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction; and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data. The application displays abnormal parameter data in the diamond growth process by setting the dynamic curve of the process parameter, can intuitively acquire specific conditions of the process parameter in real time, and processes corresponding measures aiming at the abnormal parameter data, thereby ensuring the normal growth of the diamond.
Description
Technical Field
The application relates to the technical field of data processing, in particular to an abnormal parameter detection method in a diamond growth process and related equipment.
Background
Diamond has attracted attention due to its extremely excellent physicochemical properties. However, natural diamond reserves are limited, and various synthetic diamond methods have been developed, such as high temperature high pressure (HPHT, high pressure High temperature), hot wire chemical vapor deposition (HFCVD, hot filament chemical vapor deposition), and the like. The microwave plasma chemical vapor deposition (MPCVD, microwave plasma chemical vapordeposition) method can synthesize diamond with high quality and large area because no impurity is introduced, has the advantages of no electrode discharge pollution, high deposition rate, good stability and the like, and is considered as the optimal method for preparing high-quality single crystal diamond.
In the mass production and manufacturing process of the artificial diamond, the artificial diamond comprises a plurality of fine working procedure treatments and quality control, and in the diamond growth and cultivation process, the specific conditions of technological parameters cannot be intuitively obtained, meanwhile, the abnormal data or historical abnormal data appearing at present cannot be effectively and reasonably analyzed and corresponding measures are made for treatment, so that the normal growth of the diamond is affected.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
The application mainly aims to provide an abnormal parameter detection method, system, terminal and computer readable storage medium in the diamond growth process, and aims to solve the problem that abnormal data or historical abnormal data currently occurring in the diamond growth process cannot be effectively analyzed and corresponding measures are taken for processing in the prior art, so that diamond cannot grow normally.
In order to achieve the above object, the present application provides a method for detecting abnormal parameters in a diamond growth process, the method for detecting abnormal parameters in a diamond growth process comprising the steps of:
receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction;
receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction;
and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data.
Optionally, in the method for detecting abnormal parameters in a diamond growth process, the receiving the first process parameter display instruction, generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction, and further includes:
receiving a process element display instruction, acquiring an input state and an output state of each process element in the diamond growth process according to the process element display instruction, and judging whether each process element works normally or not according to the input state and the output state.
Optionally, in the method for detecting abnormal parameters in a diamond growth process, the receiving a first process parameter display instruction, and generating a process dynamic curve corresponding to a process parameter in the diamond growth process according to the first process parameter display instruction specifically includes:
when the first technological parameter display instruction is received, acquiring a temperature value and an air pressure value of technological parameters in the diamond growth process according to the first technological parameter display instruction;
generating a first process dynamic curve of temperature change along with time in the process parameter according to the temperature value, and generating a second process dynamic curve of air pressure change along with time in the process parameter according to the air pressure value, wherein the process dynamic curve comprises the first process dynamic curve and the second process dynamic curve.
Optionally, in the method for detecting abnormal parameters in a diamond growth process, the receiving the first process parameter display instruction, generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction, and then further includes:
setting a preset temperature range of the process parameter according to the first process dynamic curve, and setting a preset air pressure range of the process parameter according to the second process dynamic curve;
and controlling the temperature value and the air pressure value to maintain a normal working state according to the preset temperature range and the preset air pressure range.
Optionally, the method for detecting abnormal parameters in the diamond growth process includes receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction, where the method specifically includes:
when a second process parameter display instruction is received, analyzing the second process parameter display instruction to obtain a preset time set in the second process parameter display instruction;
and acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction.
Optionally, the method for detecting abnormal parameters in the diamond growth process includes obtaining abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data, specifically including:
generating a process parameter monitoring table according to the process dynamic curve and the process parameter data, and acquiring current abnormal parameter data and historical abnormal parameter data in the diamond growth process according to the process dynamic curve and the process parameter monitoring table;
searching a corresponding abnormal process element according to the current abnormal parameter data, and carrying out alarm prompt or shutdown treatment on the abnormal process element;
searching corresponding abnormal parameters according to the historical abnormal parameter data, and carrying out threshold adjustment or input and output adjustment on the process parameter data corresponding to the abnormal parameters.
Optionally, the method for detecting abnormal parameters in the diamond growth process, wherein the process parameter data includes: sample surface temperature, cavity gas pressure, process gas flow rates of each path, microwave power, and reflected power.
In addition, to achieve the above object, the present application also provides an abnormal parameter detection system in a diamond growth process, wherein the abnormal parameter detection system in a diamond growth process includes:
the process dynamic curve generation module is used for receiving a first process parameter display instruction and generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction;
the process parameter data acquisition module is used for receiving a second process parameter display instruction and acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction;
the abnormal parameter data adjustment module is used for acquiring abnormal parameter data according to the process dynamic curve and the process parameter data and adjusting an abnormal process element or the abnormal process parameter data according to the abnormal parameter data.
In addition, to achieve the above object, the present application also provides a terminal, wherein the terminal includes: the device comprises a memory, a processor and an abnormal parameter detection program which is stored in the memory and can be operated on the processor in the diamond growth process, wherein the abnormal parameter detection program in the diamond growth process is executed by the processor to realize the steps of the abnormal parameter detection method in the diamond growth process.
In addition, in order to achieve the above object, the present application also provides a computer-readable storage medium storing an abnormal parameter detection program in a diamond growth process, which when executed by a processor, implements the steps of the abnormal parameter detection method in a diamond growth process as described above.
In the application, a first technological parameter display instruction is received, and a technological dynamic curve corresponding to technological parameters in the diamond growth process is generated according to the first technological parameter display instruction; receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction; and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data. According to the application, the process parameter data in the diamond growth equipment process is acquired and converted into the process dynamic curve, the process parameter data corresponding to each moment can be acquired in real time through the process dynamic curve, the abnormal parameter data appearing in the process dynamic curve are classified, the current abnormal process parameter data and the historical abnormal process parameter data are obtained, and corresponding treatment measures can be taken according to the current abnormal process parameter data and the historical abnormal process parameter data, so that the normal growth of the diamond is ensured.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a method for detecting abnormal parameters during diamond growth in accordance with the present application;
FIG. 2 is a schematic diagram of a process element operating state display interface of a preferred embodiment of the method for detecting abnormal parameters during diamond growth according to the present application;
FIG. 3 is a schematic diagram of a conventional monitoring interface for system process parameters of a preferred embodiment of the method for detecting abnormal parameters during diamond growth according to the present application;
FIG. 4 is a schematic diagram of a system process parameter refinement monitoring interface of a preferred embodiment of the abnormal parameter detection method in the diamond growth process of the present application;
FIG. 5 is a schematic diagram of a conventional recording interface for system process data for a preferred embodiment of the method for detecting abnormal parameters during diamond growth according to the present application;
FIG. 6 is a schematic diagram of a system process data refinement recording interface of a preferred embodiment of a method for detecting abnormal parameters in a diamond growth process according to the present application;
FIG. 7 is a block diagram of a preferred embodiment of an anomaly parameter detection system in a diamond growth process of the present application;
fig. 8 is a block diagram of a preferred embodiment of the terminal of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear and clear, the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Diamond has attracted attention due to its extremely excellent physicochemical properties. However, natural diamond reserves are limited, and various synthetic diamond methods have been developed, such as high temperature high pressure (HPHT, high pressure High temperature), hot wire chemical vapor deposition (HFCVD, hot filament chemical vapor deposition), and the like. The microwave plasma chemical vapor deposition (MPCVD, microwave plasma chemical vapordeposition) method can synthesize diamond with high quality and large area because no impurity is introduced, has the advantages of no electrode discharge pollution, high deposition rate, good stability and the like, and is considered as the optimal method for preparing high-quality single crystal diamond.
In the mass production and manufacturing process of the artificial diamond, the artificial diamond comprises a plurality of fine working procedure treatments and quality control, and in the diamond growth and cultivation process, the specific conditions of technological parameters cannot be intuitively obtained, meanwhile, the abnormal data or historical abnormal data appearing at present cannot be effectively and reasonably analyzed and corresponding measures are made for treatment, so that the normal growth of the diamond is affected.
The method for detecting abnormal parameters in the diamond growth process according to the preferred embodiment of the present application, as shown in fig. 1, comprises the following steps:
and step S10, receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction.
In the process of the technical growth of the diamond, a user can switch to different module display interfaces by clicking a main menu key in an MPCVD screen and issuing different control instructions, and view parameter information of other modules of the system in real time.
Specifically, receiving a process element display instruction, acquiring an input state and an output state of each process element in the diamond growth process according to the process element display instruction, and judging whether each process element works normally or not according to the input state and the output state.
As shown in fig. 2, the user enters the system input [ input/output ] status display interface by clicking the [ input/output ] button (i.e., the process element display instruction). In the interface, a user can view the input and output states of each process element of the system in real time. By clicking the [ reset ] button, the input/output record information can be deleted.
Meanwhile, in the interface, a user can see the working states of each process air inlet pipeline, the air exhaust pipeline, the microwave generator, the microwave power supply, the cooling water, the compressed air and other opening states, and analyze the opening states of each process element and the current diamond growth stage, so as to judge whether the opening states of each process element are normal (for example, when the diamond growth is in the starting and heating stage, whether each control valve in the process air path is correspondingly opened, and whether the air exhaust pipeline, the vacuum pump, the gas flowmeter and the like are correspondingly opened or not) is needed to be checked. And any process parameters are not displayed in the interface, and if the process parameters need to be changed, a key of a main menu (operation) is clicked to enter a system operation interface for setting.
And when the first technological parameter display instruction is received, acquiring the temperature value and the air pressure value of technological parameters in the diamond growth process according to the first technological parameter display instruction.
As shown in fig. 3, the user enters the system process data conventional monitoring interface by clicking the [ monitor ] button (first process parameter display instruction). In the interface, a user can view the dynamic curves generated by the surface temperature of the sample and the air pressure parameters of the cavity at various moments in real time.
Generating a first process dynamic curve of temperature change along with time in the process parameter according to the temperature value, and generating a second process dynamic curve of air pressure change along with time in the process parameter according to the air pressure value, wherein the process dynamic curve comprises the first process dynamic curve and the second process dynamic curve.
The acquired process parameters including surface temperature, cavity air pressure, process gas flow of each path, microwave power, reflected power and the like are respectively used as vertical axis coordinates, and the current time point is used as horizontal axis coordinates. The dynamic curve can be drawn by adjusting the time interval of each recording data point (for example, 30 s/recording a point, the default conventional mode is 30s recording a point, the accurate mode is 1s recording a point) and then connecting each point, and the user can generate the corresponding process dynamic curve by clicking any process parameter of the data channel in fig. 3. For example, when the user clicks on H in the data channel 2 When the key is pressed, H is generated 2 A first dynamic process curve of temperature and time at each moment, and H is generated 2 A second dynamic process profile relating gas pressure to time at each instant.
And setting a preset temperature range of the process parameter according to the first process dynamic curve, and setting a preset air pressure range of the process parameter according to the second process dynamic curve.
As shown in fig. 3, a user may set the minimum temperature, the maximum temperature, the minimum air pressure value and the maximum air pressure value of the process curve in sequence at keys of the lower right corner of the system process parameter monitoring interface [ tmin ], the system process parameter monitoring interface [ tmax ], the system process parameter monitoring interface [ pmin ] and the system process parameter monitoring interface [ pmax ]. And obtaining a preset temperature range and a preset air pressure range, and controlling the temperature value and the air pressure value to maintain a normal working state according to the preset temperature range and the preset air pressure range.
The surface temperature, the cavity air pressure, the flow of each path of process gas, the microwave power, the reflection power and other parameters can directly influence the growth process of the diamond, the minimum temperature, the maximum temperature, the minimum air pressure and the maximum air pressure are set, the parameters can be maintained in the set parameter ranges, the size of a fire sphere and the temperature of a molybdenum sheet are controlled, the stability of a process curve is maintained, the generation of abnormal data is reduced, the diamond grows in the most proper environment, and the diamond with higher quality is grown.
And step S20, receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction.
Specifically, when a second process parameter display instruction is received, the second process parameter display instruction is analyzed to obtain a preset time set in the second process parameter display instruction.
And acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction.
When a user clicks the screen at any time below the screen, the system can automatically display the corresponding parameter values of the sample surface temperature, the cavity air pressure, the process gas flow of each path, the microwave power, the reflected power and the like at the time.
The process parameter data comprises: sample surface temperature, cavity gas pressure, process gas flow rates of each path, microwave power, and reflected power.
The surface temperature of the sample is measured by using infrared temperature measurement, the cavity air pressure is measured by a film vacuum gauge (namely HG and LG, wherein HG is the film vacuum gauge for measuring the air pressure in a first preset range in the cavity, LG is the film vacuum gauge for measuring the air pressure in a second preset range in the cavity), the process air flow is obtained by a gas mass flow controller, the microwave power is obtained by reading a microwave source by test software, and the reflected power is obtained by measurement.
As shown in fig. 4, the present application may enter the system process parameter refinement monitoring interface (in fig. 3, a conventional mode records a point every 30S, and a fine mode records a point every 1S) by clicking the key on the lower right side of the interface, and similarly, after clicking the key on the lower right side of the interface, the dynamic curve generated by the surface temperature of the device sample and the cavity air pressure parameter at each moment starts to be monitored more finely. Clicking any time below the screen, the system can automatically display the corresponding parameter values of the sample surface temperature, the cavity air pressure, the process gas flow of each path, the microwave power, the reflected power and the like at the time. The time interval of parameter record in the state is 1s, and the time interval in the conventional state is 30s; clicking keys on the right side (T min), T max, P min and P max respectively, sequentially setting the lowest temperature, the highest temperature, the minimum air pressure and the maximum air pressure of the process curve, clicking keys on the lower right side (Back), and returning to the upper interface.
Step S30, obtaining abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting the process element or the process parameter data according to the abnormal parameter data.
The process growth stage of diamond is the stage of the diamond cultivation process with the longest duration. After the equipment power and the air pressure display state are stable and the sample enters the etching and growing stage, two modes of manual and automatic are provided for the user to select:
the manual mode is generally used in a new process development or verification stage, a user can manually adjust process parameters according to sample etching and growth conditions, and when microwave power, air pressure, process air flow and process temperature reach a stable state and long-time growth is required, the user can set the process temperature and allowable variation, and an automatic process temperature monitoring function is started. When the process temperature exceeds a preset temperature interval, the system can give out a warning to prompt a user to perform intervention correction.
An automatic mode, which is typically used at the process maturation stage, allows the user to open process recipe options and the system automatically performs sample growth according to the preset process recipe. When the sample has completed growing according to all process recipes, the system prompts the user for the next operation. The user can also grow according to the process formula, if the process temperature is required to be kept constant in the sample growth process, the process temperature constant function can be started. The system can automatically adjust the process temperature in the sample growth process without manual intervention operation of a user.
Specifically, a process parameter monitoring table is generated according to the process dynamic curve and the process parameter data, and current abnormal parameter data and historical abnormal parameter data in the diamond growth process are obtained according to the process dynamic curve and the process parameter monitoring table.
As shown in fig. 5, the user may enter the record interface of the system process parameter monitoring table by clicking the [ record ] button. In the interface, a user can view each group of process gas flow, microwave reflection power, cavity pressure, sample surface temperature and microwave power corresponding to the equipment at each moment in real time.
As shown in fig. 6, clicking the "fine" button can record the above process parameters more finely; clicking the [ delete ] key can prune the data; clicking the "backup" button may perform backup processing on the data.
The user can acquire current abnormal parameter data and historical abnormal parameter data in the diamond growth process through the conventional process parameter monitoring table in fig. 5 and the fine process parameter table in fig. 6, and can identify in the conventional process parameter monitoring table and the fine process parameter monitoring table. The current abnormal parameter data refer to abnormal process data in the current diamond growth stage, and the historical abnormal parameter data refer to abnormal process data in the completed growth stage.
Specifically, currently collected process parameter data is compared with a preset process parameter data range, when the process parameter data exceeds the preset process parameter data range, the process parameter data is judged to be abnormal process parameter data, and the abnormal process parameter data is marked on a process dynamic curve and a process parameter monitoring table.
And searching a corresponding abnormal process element according to the current abnormal parameter data, and carrying out alarm prompt or shutdown processing on the abnormal process element, for example, once the plasma fireball is found to jump up, an emergency stop button needs to be pressed down in an emergency way, and microwave output is closed to prevent equipment parts from being damaged.
When a user finds that abnormal parameter data appear in the current diamond growth stage through a conventional process parameter monitoring table and a fine process parameter table, the user searches a corresponding abnormal process element with a problem according to the abnormal parameter data, and carries out alarm prompt or shutdown treatment on the abnormal process element according to the damage degree of the abnormal parameter data, for example, a warning value of reflected power can be set; or setting a stopping value of the reflected power, namely, when the reflected power reaches a preset value, the system gives out a warning or turns off the microwave power supply.
The following are the corresponding measures taken when the process element is abnormal:
1. when the data communication of the infrared thermometer is abnormal, alarming and checking the communication line of the infrared thermometer;
2. when the temperature data of the power supply, the substrate table, the cavity or the microwave head are abnormal, checking whether the sensor and the water cooling machine are abnormal, if so, stopping the machine;
3. when the communication is abnormal, alarming and checking a communication line;
4. when the output power data is insufficient, checking three-phase connection from an external power supply to a microwave power supply; when the output power data is too large, it is necessary to ensure three-phase connection between all the main power connectors connected from the main power source to the generator;
5. when the temperature of the magnetron is too high, checking whether the water cooling and the air inlet and outlet of the microwave head are blocked;
6. when the valve of the air circuit pipeline is closed due to sudden failure, stopping process air inlet, checking whether the compressed air pipeline or the pneumatic adapter leaks, repairing and replacing in time, checking whether the running state of the air compressor is normal, and if the air compressor fails, overhauling the air compressor and replacing the failure valve;
7. when the equipment is started and is not electrified, checking whether a power socket is plugged in place or not and whether the contact is good or not when the contact of a power line is bad; checking whether the fuse melt in the device is blown.
Searching corresponding abnormal parameters according to the historical abnormal parameter data, and carrying out threshold adjustment or input and output adjustment on the process parameter data corresponding to the abnormal parameters.
When the user finds that the historically collected process parameter data is abnormal through the conventional process parameter monitoring table and the fine process parameter table, the user searches the corresponding abnormal process parameter according to the abnormal parameter data and resets the parameter range of the process parameter.
1: if the reflected power is too high, three pins can be adjusted to adjust the reflected power. Among these, the three pin tuner is an optional component that provides a wider process window for the system by matching the impedance of the magnetron to the impedance of the load (e.g., plasma). The matching degree of the impedance directly influences the reflected power, and the more matched impedance can reduce the reflected power.
2: if the temperature data is abnormal and too high or too low, the preset minimum temperature and the preset maximum temperature can be adjusted, and the temperature minimum value is increased or the temperature maximum value is reduced, so that the temperature works in an adjusting range.
3: if the air pressure data is abnormal, too high or too low, or the air pressure is not matched with the power, the preset lowest air pressure and highest air pressure can be adjusted, the air pressure minimum value is increased or the air pressure maximum value is reduced, and the air pressure works in the adjusting range. Or the vacuum degree is changed by adjusting the pressure control valve to directly adjust the air pressure, and the air pressure value is changed by manual adjustment.
And after the process parameters are adjusted, continuously monitoring according to the adjusted process parameters.
In summary, the application generates the process dynamic curve according to the process parameters by collecting the process parameters in the diamond growth process, can intuitively and accurately find out the abnormal data in the diamond growth process through the process dynamic curve, can accurately know abnormal process elements, and timely adjusts the parameters or stops alarming, thereby ensuring the normal growth of the diamond.
Further, as shown in fig. 7, based on the method for detecting abnormal parameters in the diamond growth process, the application further correspondingly provides a system for detecting abnormal parameters in the diamond growth process, wherein the system for detecting abnormal parameters in the diamond growth process comprises:
the process dynamic curve generating module 51 is configured to receive a first process parameter display instruction, and generate a process dynamic curve corresponding to a process parameter in the diamond growth process according to the first process parameter display instruction;
the process parameter data obtaining module 52 is configured to receive a second process parameter display instruction, and obtain process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction;
the abnormal parameter data adjustment module 53 is configured to obtain abnormal parameter data according to the process dynamic curve and the process parameter data, and adjust an abnormal process element or the abnormal process parameter data according to the abnormal parameter data.
Further, as shown in fig. 8, based on the method and the system for detecting abnormal parameters in the diamond growth process, the application further correspondingly provides a terminal, which comprises a processor 10, a memory 20 and a display 30. Fig. 8 shows only some of the components of the terminal, but it should be understood that not all of the illustrated components are required to be implemented and that more or fewer components may be implemented instead.
The memory 20 may in some embodiments be an internal storage unit of the terminal, such as a hard disk or a memory of the terminal. The memory 20 may in other embodiments also be an external storage device of the terminal, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card) or the like, which are provided on the terminal. Further, the memory 20 may also include both an internal storage unit and an external storage device of the terminal. The memory 20 is used for storing application software installed in the terminal and various data, such as program codes of the installation terminal. The memory 20 may also be used to temporarily store data that has been output or is to be output. In one embodiment, the memory 20 stores an abnormal parameter detecting program 40 during the diamond growth process, and the abnormal parameter detecting program 40 during the diamond growth process may be executed by the processor 10, thereby implementing the abnormal parameter detecting method during the diamond growth process according to the present application.
The processor 10 may in some embodiments be a central processing unit (Central Processing Unit, CPU), microprocessor or other data processing chip for executing program code or processing data stored in the memory 20, such as performing abnormal parameter detection methods during the diamond growth process.
The display 30 may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, an OLED (Organic Light-Emitting Diode) touch, or the like in some embodiments. The display 30 is used for displaying information at the terminal and for displaying a visual user interface. The components 10-30 of the terminal communicate with each other via a system bus.
In one embodiment, the processor 10, when executing the abnormal parameter detection program 40 in the memory 20 during diamond growth, performs the following steps:
receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction;
receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction;
and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data.
The method comprises the steps of receiving a first technological parameter display instruction, generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction, and further comprises the following steps:
receiving a process element display instruction, acquiring an input state and an output state of each process element in the diamond growth process according to the process element display instruction, and judging whether each process element works normally or not according to the input state and the output state.
The method for generating the process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction comprises the following steps:
when the first technological parameter display instruction is received, acquiring a temperature value and an air pressure value of technological parameters in the diamond growth process according to the first technological parameter display instruction;
generating a first process dynamic curve of temperature change along with time in the process parameter according to the temperature value, and generating a second process dynamic curve of air pressure change along with time in the process parameter according to the air pressure value, wherein the process dynamic curve comprises the first process dynamic curve and the second process dynamic curve.
The method comprises the steps of receiving a first technological parameter display instruction, generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction, and then further comprising:
setting a preset temperature range of the process parameter according to the first process dynamic curve, and setting a preset air pressure range of the process parameter according to the second process dynamic curve;
and controlling the temperature value and the air pressure value to maintain a normal working state according to the preset temperature range and the preset air pressure range.
The receiving a second process parameter display instruction, and obtaining process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction specifically includes:
when a second process parameter display instruction is received, analyzing the second process parameter display instruction to obtain a preset time set in the second process parameter display instruction;
and acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction.
The method comprises the steps of obtaining abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data, wherein the method specifically comprises the following steps:
generating a process parameter monitoring table according to the process dynamic curve and the process parameter data, and acquiring current abnormal parameter data and historical abnormal parameter data in the diamond growth process according to the process dynamic curve and the process parameter monitoring table;
searching a corresponding abnormal process element according to the current abnormal parameter data, and carrying out alarm prompt or shutdown treatment on the abnormal process element;
searching corresponding abnormal parameters according to the historical abnormal parameter data, and carrying out threshold adjustment or input and output adjustment on the process parameter data corresponding to the abnormal parameters.
Wherein the process parameter data comprises: sample surface temperature, cavity gas pressure, process gas flow rates of each path, microwave power, and reflected power.
The present application also provides a computer-readable storage medium storing an abnormal parameter detection program in a diamond growth process, which when executed by a processor, implements the steps of the abnormal parameter detection method in a diamond growth process as described above.
In summary, the present application provides a method for detecting abnormal parameters in a diamond growth process and related equipment, where the method includes: receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction; receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction; and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data. According to the application, the process parameter data in the diamond growth equipment process is acquired and converted into the process dynamic curve, the process parameter data corresponding to each moment can be acquired in real time through the process dynamic curve, the abnormal parameter data appearing in the process dynamic curve are classified, the current abnormal process parameter data and the historical abnormal process parameter data are obtained, and corresponding treatment measures can be taken according to the current abnormal process parameter data and the historical abnormal process parameter data, so that the normal growth of the diamond is ensured.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal comprising the element.
Of course, those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by a computer program for instructing relevant hardware (e.g., processor, controller, etc.), the program may be stored on a computer readable storage medium, and the program may include the above described methods when executed. The computer readable storage medium may be a memory, a magnetic disk, an optical disk, etc.
It is to be understood that the application is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. The abnormal parameter detection method in the diamond growth process is characterized by comprising the following steps of:
receiving a first technological parameter display instruction, and generating a technological dynamic curve corresponding to technological parameters in the diamond growth process according to the first technological parameter display instruction;
receiving a second process parameter display instruction, and acquiring process parameter data at a preset moment in the process dynamic curve according to the second process parameter display instruction;
and acquiring abnormal parameter data according to the process dynamic curve and the process parameter data, and adjusting a process element or the process parameter data according to the abnormal parameter data.
2. The method for detecting abnormal parameters in a diamond growth process according to claim 1, wherein the step of receiving a first process parameter display instruction, and generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction, further comprises:
receiving a process element display instruction, acquiring an input state and an output state of each process element in the diamond growth process according to the process element display instruction, and judging whether each process element works normally or not according to the input state and the output state.
3. The method for detecting abnormal parameters in a diamond growth process according to claim 1, wherein the step of receiving a first process parameter display instruction and generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction specifically comprises:
when the first technological parameter display instruction is received, acquiring a temperature value and an air pressure value of technological parameters in the diamond growth process according to the first technological parameter display instruction;
generating a first process dynamic curve of temperature change along with time in the process parameter according to the temperature value, and generating a second process dynamic curve of air pressure change along with time in the process parameter according to the air pressure value, wherein the process dynamic curve comprises the first process dynamic curve and the second process dynamic curve.
4. The method for detecting abnormal parameters in a diamond growth process according to claim 3, wherein the step of receiving a first process parameter display instruction, and generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction, further comprises:
setting a preset temperature range of the process parameter according to the first process dynamic curve, and setting a preset air pressure range of the process parameter according to the second process dynamic curve;
and controlling the temperature value and the air pressure value to maintain a normal working state according to the preset temperature range and the preset air pressure range.
5. The method for detecting abnormal parameters in a diamond growth process according to claim 1, wherein the receiving a second process parameter display instruction, and acquiring process parameter data at a preset time in the process dynamic curve according to the second process parameter display instruction, specifically includes:
when a second process parameter display instruction is received, analyzing the second process parameter display instruction to obtain a preset time set in the second process parameter display instruction;
and acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction.
6. The method for detecting abnormal parameters in a diamond growth process according to claim 1, wherein the step of acquiring abnormal parameter data according to the process dynamic curve and the process parameter data and adjusting a process element or the process parameter data according to the abnormal parameter data specifically comprises:
generating a process parameter monitoring table according to the process dynamic curve and the process parameter data, and acquiring current abnormal parameter data and historical abnormal parameter data in the diamond growth process according to the process dynamic curve and the process parameter monitoring table;
searching a corresponding abnormal process element according to the current abnormal parameter data, and carrying out alarm prompt or shutdown treatment on the abnormal process element;
searching corresponding abnormal parameters according to the historical abnormal parameter data, and carrying out threshold adjustment or input and output adjustment on the process parameter data corresponding to the abnormal parameters.
7. The method for detecting abnormal parameters in a diamond growth process according to claim 1, wherein the process parameter data comprises: sample surface temperature, cavity gas pressure, process gas flow rates of each path, microwave power, and reflected power.
8. An abnormal parameter detection system in a diamond growth process, characterized in that the abnormal parameter detection system in a diamond growth process comprises:
the process dynamic curve generation module is used for receiving a first process parameter display instruction and generating a process dynamic curve corresponding to the process parameters in the diamond growth process according to the first process parameter display instruction;
the process parameter data acquisition module is used for receiving a second process parameter display instruction and acquiring process parameter data at preset time in the process dynamic curve according to the second process parameter display instruction;
the abnormal parameter data adjustment module is used for acquiring abnormal parameter data according to the process dynamic curve and the process parameter data and adjusting an abnormal process element or the abnormal process parameter data according to the abnormal parameter data.
9. A terminal, the terminal comprising: a memory, a processor and an abnormal parameter detection program stored on the memory and operable on the processor during diamond growth, the abnormal parameter detection program during diamond growth when executed by the processor performing the steps of the abnormal parameter detection method during diamond growth as claimed in any one of claims 1 to 7.
10. A computer-readable storage medium storing an abnormality parameter detection program in a diamond growth process, which when executed by a processor, implements the steps of the abnormality parameter detection method in a diamond growth process as claimed in any one of claims 1 to 7.
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