CN117020370A - Apparatus and method for producing metal single crystal - Google Patents
Apparatus and method for producing metal single crystal Download PDFInfo
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- CN117020370A CN117020370A CN202311152855.1A CN202311152855A CN117020370A CN 117020370 A CN117020370 A CN 117020370A CN 202311152855 A CN202311152855 A CN 202311152855A CN 117020370 A CN117020370 A CN 117020370A
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- welding gun
- wire feeding
- single crystal
- metal single
- welding
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- 239000013078 crystal Substances 0.000 title claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 94
- 239000002184 metal Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 238000010891 electric arc Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/18—Submerged-arc welding
- B23K9/182—Submerged-arc welding making use of a non-consumable electrode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/12—Automatic feeding or moving of electrodes or work for spot or seam welding or cutting
- B23K9/133—Means for feeding electrodes, e.g. drums, rolls, motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/24—Features related to electrodes
- B23K9/28—Supporting devices for electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/32—Accessories
- B23K9/325—Devices for supplying or evacuating shielding gas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention discloses a metal single crystal manufacturing device, which relates to the technical field of metal single crystal manufacturing and can comprise: the welding gun comprises a substrate, a welding gun, a wire feeding assembly and a moving assembly, wherein the substrate is used for forming a metal monocrystal; the welding guns are provided with a plurality of welding guns, and the distribution form of all the welding guns is matched with the shape of the metal monocrystal to be manufactured; the wire feeding assembly comprises a wire feeding nozzle, the wire feeding nozzle is arranged close to the welding gun, the welding gun can generate electric arcs to melt wires conveyed by the wire feeding nozzle and enable the wires to be deposited on the substrate, the moving assembly can drive the welding gun and the wire feeding nozzle to move, and/or the moving assembly can drive the substrate to move. The invention also discloses a metal single crystal manufacturing method adopting the metal single crystal manufacturing device. The invention not only can prepare large-size metal single crystals, but also can reduce the production cost and improve the production efficiency.
Description
Technical Field
The invention relates to the technical field of metal single crystal manufacturing, in particular to a metal single crystal manufacturing device and a metal single crystal manufacturing method.
Background
The metal monocrystal has excellent mechanical property at high temperature and wide application range, and has important application in the fields of aerospace, nuclear energy, electronics, weaponry, biomedicine and the like. In order to realize the preparation of large-size metal single crystals, a plasma arc melting method is generally adopted at present, the size of the single crystals manufactured by the plasma arc melting is not limited by a single crystal substrate, the single crystals are widely applied to the preparation of refractory metal single crystals, and the manufacture of large-size single crystal structural parts can be realized, so that the method is a very mature method.
The plasma arc melting method is suitable for manufacturing single crystal structural parts of various metal materials, especially refractory metals. The device used in the method comprises the following structures from bottom to top: the device comprises a water-cooled copper base, a monocrystalline substrate, raw material wires, a tungsten electrode and a plasma welding gun; wherein, circulating cooling water and inert gas are introduced into the plasma welding gun. The method generally comprises the following steps: (1) Selecting a proper single crystal substrate according to the size and the material type of a target structural member, and fixing the single crystal substrate on a water-cooled copper base; (2) Starting a plasma arc, wherein a tungsten electrode is used as a cathode, a metal monocrystalline substrate is used as an anode, inert gas is ionized, and the plasma arc is generated at the periphery of the tungsten electrode and used as a heat source; (3) The plasma arc generates high temperature to melt the monocrystalline substrate, and a molten pool is generated at the top end of the monocrystalline substrate; (4) The raw material wire is fed into the plasma arc from the side and melted, the liquid metal flows into the molten pool in the form of liquid drops, and the water-cooled copper base slowly moves downwards until the required manufacturing size is reached, and the manufacturing is finished.
Although the plasma arc melting method can realize the manufacture of large-size single crystals, the method relies on large-size plasma arc melting equipment, equipment and matched materials, the cost is extremely high, the efficiency of preparing single crystals by plasma melting is extremely low at present, and the production rate of the method is generally not more than 2mm/min in order to ensure the stable growth of the single crystals.
Disclosure of Invention
The invention aims to provide a metal single crystal manufacturing device and a metal single crystal manufacturing method, which are used for solving the problems existing in the prior art, not only can large-size metal single crystals be manufactured, but also can reduce the production cost and improve the production efficiency.
In order to achieve the above object, the present invention provides the following solutions:
the present invention provides a metal single crystal manufacturing apparatus, comprising: the welding gun comprises a substrate, a welding gun, a wire feeding assembly and a moving assembly, wherein the substrate is used for forming a metal monocrystal; the welding guns are provided with a plurality of welding guns, and the distribution form of all the welding guns is matched with the shape of the metal monocrystal to be manufactured; the wire feeding assembly comprises a wire feeding nozzle, the wire feeding nozzle is arranged close to the welding gun, the welding gun can generate electric arcs to melt wires conveyed by the wire feeding nozzle and enable the wires to be deposited on the substrate, the moving assembly can drive the welding gun and the wire feeding nozzle to move, and/or the moving assembly can drive the substrate to move.
Preferably, the metal single crystal manufacturing device further comprises a welding gun clamp, the welding gun and the wire feeding nozzle are mounted on the welding gun clamp, the wire feeding nozzle is arranged between every two adjacent welding guns, and the moving assembly is used for driving the welding gun clamp to move.
Preferably, the metal single crystal manufacturing apparatus further comprises a stage on which the substrate is placed, wherein the substrate is the same material as the metal single crystal.
Preferably, a tungsten electrode is arranged at the front end of the welding gun, and the anode and the cathode of the welding machine of the welding gun are respectively and electrically connected with the workbench and the welding gun, so that welding current can generate an electric arc between the tungsten electrode and the prepared metal single crystal structural member.
Preferably, the welding machine is further connected with a protective gas tank, and protective gas in the protective gas tank can be conveyed to the welding gun through the welding machine.
Preferably, the metal single crystal manufacturing apparatus further comprises an auxiliary heating device capable of auxiliary heating the wire material conveyed by the wire feeding nozzle.
Preferably, the wire feeding nozzle is a conductive nozzle, the auxiliary heating device is a hot wire machine, and the anode and the cathode of the hot wire machine are respectively electrically connected with the workbench and the conductive nozzle so as to generate resistance heat for auxiliary heating of the wire.
Preferably, the wire feeding assembly further comprises a wire feeding unit, the wire feeding unit comprises a plurality of wire feeding machines, the wire feeding machines are in one-to-one correspondence with the wire feeding nozzles, and the wire feeding machines are used for feeding wires to the corresponding wire feeding nozzles.
Preferably, the welding gun clamp comprises two cuboid clamping plates which are buckled with each other, and a plurality of first mounting holes and a plurality of second mounting holes are formed between the two cuboid clamping plates, wherein the first mounting holes are used for mounting the welding gun, and the second mounting holes are used for mounting the wire feeding nozzle;
or, the welding gun clamp comprises a disc-shaped mounting plate, wherein a plurality of first mounting holes and a plurality of second mounting holes are alternately distributed on the outer edge of the disc-shaped mounting plate along the circumferential direction, the first mounting holes are used for mounting the welding gun, and the second mounting holes are used for mounting the wire feeding nozzle; the diameter of the first mounting hole is larger than that of the welding gun, and the welding gun is fastened in the corresponding first mounting hole through a bolt; the center position of the disc-shaped mounting plate is provided with a first mounting hole, one side of the edge of the first mounting hole is provided with a protruding mounting wall, and the corresponding welding gun is fastened by penetrating through the mounting wall through a bolt.
The invention also provides a metal single crystal manufacturing method, which adopts the metal single crystal manufacturing device, and comprises the following steps:
s1: mounting the substrate on an additive manufacturing table;
s2: clamping a plurality of welding guns and wire feeding nozzles according to a preset structural form;
s3: starting the welding gun, applying low-frequency pulse current to start an arc, and preheating the substrate;
s4: the heated wire is sent to an electric arc through the wire feeding nozzle, the welding gun and the wire feeding nozzle are driven to move along a preset path through the moving assembly, and a molten pool with stable growth positions of the metal single crystals is maintained through cooperative regulation and control of multiple electric arcs so as to ensure the growth process of the metal single crystals;
s5: and under the protection gas environment, the wire is melted and deposited on the substrate under the action of an electric arc, and the metal single crystal structural member is obtained by layer-by-layer deposition in a preset path.
Compared with the prior art, the invention has the following beneficial technical effects:
1. high manufacturing efficiency; compared with single-arc regulation and control of plasma arc smelting, the invention is provided with a plurality of welding guns, and the electric arc heat input corresponding to each part of the molten pool can be regulated and controlled more conveniently by a multi-arc cluster type manufacturing method, so that the growth condition of the metal single crystal is better satisfied, the molten pool is not required to be stabilized by reducing the production speed, and the preparation speed of the metal single crystal is greatly improved.
2. The preparation of a large-size metal single crystal structure can be realized; the invention can obtain a stable molten pool with large size and meeting the growth condition of single crystals by respectively regulating and controlling the arc heat input of a plurality of welding guns, finally obtain large-size metal single crystals with different shapes, and provides a solution for the manufacturing difficult problem of large-size metal single crystals with various shapes.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing a structure of an apparatus for producing a metal single crystal according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a rectangular welding gun clamp according to an embodiment of the present invention;
FIG. 3 is a front view of a disc-shaped welding gun clamp according to an embodiment of the invention;
FIG. 4 is a top view of a disc-shaped welding gun clamp according to an embodiment of the invention;
FIG. 5 is a schematic diagram of a pulse current according to an embodiment of the present invention;
FIG. 6 is a flow chart showing the overall preparation of a metal single crystal in an embodiment of the present invention;
FIG. 7 is a schematic diagram showing the comparison of single-arc and multi-arc pool control principles in accordance with an embodiment of the present invention;
FIG. 8 is a schematic diagram of a metal single crystal manufacturing principle in an embodiment of the present invention;
FIG. 9 is a schematic view of the crystal growth of the approximately planar interface molten pool at b in FIG. 8;
FIG. 10 is a schematic view of the crystal growth of the convex interface melt pool at c in FIG. 8.
In the figure, a 1-hot wire machine, a 2-welding gun, a 201-tungsten electrode, a 3-conducting nozzle, 301-wires, a 4-welding gun clamp, a 5-wire feeding unit, a 6-numerical control system, a 7-welding machine, an 8-protective gas tank, 801-protective gas, a 9-metal single crystal structural member, a 10-substrate, an 11-workbench, a 12-electric arc and a 13-molten pool are arranged.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a metal single crystal manufacturing device and a metal single crystal manufacturing method, which are used for solving the problems existing in the prior art, not only can large-size metal single crystals be manufactured, but also can reduce the production cost and improve the production efficiency.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
As shown in fig. 1 to 10, the present embodiment provides a metal single crystal manufacturing apparatus, which mainly includes: a substrate 10, a welding gun clamp 4, a welding gun 2, a wire feeding assembly and a moving assembly, wherein the substrate 10 is used for forming a metal monocrystal; the wire feeding assembly comprises wire feeding nozzles, the welding guns 2 and the wire feeding nozzles are all installed on the welding gun clamp 4, the welding guns 2 are provided with a plurality of welding guns, the wire feeding nozzles are all arranged between the adjacent welding guns 2, the welding guns 2 can generate electric arcs 12 to melt wires 301 conveyed by the wire feeding nozzles and enable the wires to be deposited on the substrate 10 or the solidified metal single crystal structural member 9 on the substrate 10, and the moving assembly is used for driving the welding gun clamp 4 to move. Further, the metal single crystal manufacturing apparatus further includes a numerical control system 6, and each electrical component is controlled by the numerical control system 6.
In the embodiment, a plurality of welding guns 2 are integrated on the welding gun clamp 4, so that multi-arc cluster type manufacturing can be realized; compared with single-arc regulation and control of plasma arc smelting, the multi-arc cluster manufacturing method in the embodiment can regulate and control the electric arc heat input corresponding to each part of the molten pool 13 more conveniently, and better meets the growth condition of the metal single crystal, so that the molten pool 13 does not need to be stabilized in a mode of reducing the production speed, and the preparation speed of the metal single crystal is greatly improved.
In addition, in the embodiment, through the arrangement form of multiple electric arcs and the respective regulation and control of the heat input of the multiple electric arcs, a stable molten pool 13 with large size and meeting the growth conditions of the metal single crystals can be obtained, and finally, large-size metal single crystals with different shapes can be obtained, so that a solution is provided for the manufacturing difficulty of large-size metal single crystals with various shapes.
Further, the equipment cost in the present embodiment is mainly focused on the cost generated by a plurality of welding guns 2, and the welding gun is preferably a tungsten inert gas arc welding gun with lower cost, so that the equipment cost can be reduced.
In this embodiment, the substrate 10 is made of a single crystal material and is made of the same material as the metal single crystal structure 9.
Further, the apparatus for manufacturing a metal single crystal further comprises a table 11, the substrate 10 is placed on the table 11, the table 11 is used for fixing a workpiece and grounding, and a loop is formed for welding current and hot wire current generated by the hot wire machine 1.
In this embodiment, a tungsten electrode 201 is disposed at the front end of the welding gun 2, and the positive and negative electrodes of the welding machine 7 of the welding gun 2 are electrically connected to the workbench 11 and the welding gun 2, respectively, so that an arc 12 can be generated between the tungsten electrode 201 and the prepared metal single crystal structural member 9 by welding current. Furthermore, a protective gas tank 8 is connected to the welding machine 7, and a protective gas 801 in the protective gas tank 8 can be conveyed to the welding gun 2 through the welding machine 7 to protect the molten metal from the atmosphere; among them, the shielding gas 801 is preferably argon. In this embodiment, the welding gun structure is a tungsten inert gas arc welding gun, and the cost is the lowest in all the arc welding guns, so that the equipment cost is further reduced.
In this embodiment, the apparatus for producing a metal single crystal further includes an auxiliary heating device capable of auxiliary heating the wire 301 conveyed by the wire-feeding nozzle; the wire feeding nozzle is a conductive nozzle 3, the auxiliary heating device is a hot wire machine 1, and the anode and the cathode of the hot wire machine 1 are respectively electrically connected with the workbench 11 and the conductive nozzle 3 to generate resistance heat for auxiliary heating of the wire 301. Specifically, the hot wire machine 1 is responsible for generating hot wire current, and is conducted to a loop formed by the wire 301, the metal single crystal structural member 9, the substrate 10 and the workbench 11 through the conductive nozzle 3, and the resistance is very high on the wire 301 made of metal with small diameter (0.8-3.2 mm), so that a large amount of resistance heat can be generated, and the effect of auxiliary heating the wire 301 is achieved.
In this embodiment, the wire feeding assembly further includes a wire feeding unit 5, where the wire feeding unit 5 includes a plurality of wire feeders, the wire feeders are in one-to-one correspondence with the wire feeding nozzles, and the wire feeders can deliver the wires 301 to the corresponding wire feeding nozzles until the wires are delivered to the electric arc 12, and the wire feeding speed is controlled by the numerical control system 6.
In the embodiment, the distribution mode of the welding gun 2 and the wire feeding nozzle is set according to the metal single crystal structural member 9 to be formed; specifically, as shown in fig. 2, when the plate-shaped metal single crystal structural member is prepared, the welding gun clamp 4 comprises two cuboid clamping plates which are buckled with each other, a plurality of first mounting holes and a plurality of second mounting holes are formed between the two cuboid clamping plates, wherein the first mounting holes are used for mounting the welding gun 2, the second mounting holes are used for mounting the wire feeding nozzle, and the two cuboid clamping plates can be connected through bolt fastening.
As shown in fig. 3 to 4, when preparing a rod-shaped or tubular metal single crystal structural member, the welding gun fixture comprises a disc-shaped mounting plate, wherein a plurality of first mounting holes and second mounting holes are alternately and uniformly distributed on the outer edge of the disc-shaped mounting plate along the circumferential direction, the first mounting holes are used for mounting the welding gun 2, and the second mounting holes are used for mounting the wire feeding nozzle; the diameter of the first mounting hole is larger than that of the welding gun 2, and the welding gun 2 is fastened in the corresponding first mounting hole through bolts; the center position of the disc-shaped mounting plate is also provided with a first mounting hole, one side of the edge of the first mounting hole is provided with a convex mounting wall, and the corresponding welding gun 2 is fixed by penetrating through the mounting wall through a bolt.
The low frequency (0.1-2 Hz) pulse current used in this example is shown in FIG. 5, the peak current used is in the range of 50A-500A, the size of the pulse current is adjusted according to the material and the size of the required prepared parts, the base current is in the range of 5-200A, and the duty ratio (peak time/pulse period) is in the range of 3% -100%; wherein the wire 301 and the deposited metal single crystal structure 9 fuse during the peak current time and form a melt pool 13, the melt pool 13 cooling and solidifying during the base time; the preparation of the metal single crystal can be completed by adjusting the parameters (peak current, base current and duty ratio) of the pulse current.
The embodiment also discloses a metal single crystal manufacturing method, which adopts the metal single crystal manufacturing device and mainly comprises the following steps:
s1: mounting the substrate 10 on an additive manufacturing stage;
s2: clamping a plurality of welding guns 2 and wire feeding nozzles according to a preset structural form;
s3: starting the welding gun 2, applying low-frequency pulse current to start an arc and preheating the substrate 10;
s4: the heated wire 301 is sent to an electric arc, and meanwhile, the welding gun clamp 4 is driven to move along a preset path through the moving assembly, and a stable molten pool is maintained through cooperative regulation and control of multiple electric arcs so as to ensure the growth process of the metal single crystal;
s5: under the protection gas environment, the wire 301 is melted and deposited on the substrate 10 under the action of an electric arc, and the metal single crystal structural member 9 is obtained by layer deposition according to a preset path.
The specific working steps are shown in fig. 6, and the whole thought is as follows:
firstly, selecting a corresponding welding gun clamp 4 according to the shape and the size of a metal single crystal structural part 9 which is prepared as required; then writing a corresponding path code to control the movement of the welding gun 2, selecting proper manufacturing process parameters, and clamping the substrate 10; after the arc 12 is started, preheating the substrate 10, and then starting wire feeding and hot wire assisting; after starting wire feeding, the welding gun 2 is controlled to move according to a designed vertical ascending path, wire feeding is continued to maintain stable raw material supply, and a growth process of the metal single crystal is ensured by multi-arc regulation and maintenance of a stable molten pool 13 until final manufacturing is completed.
In this embodiment, the principle of regulating the molten pool 13 by multiple arcs is shown in fig. 7, firstly, a form of a molten pool 13 generated by a gaussian heat source single arc is shown in fig. 7 a, and as heat is concentrated in a middle area, the penetration of the middle part of the molten pool 13 is large, a concave interface is generally formed, which is unfavorable for single crystal growth; in fig. 7B, the principle of regulating the molten pool 13 by multiple arcs is shown, and each arc 12 can respectively adopt different heat inputs, so that the generated molten pool 13 can be controlled to be in a form of combining an edge convex interface with a middle approximate flat interface by cooperative regulation of multiple arcs 12, which is beneficial to growth of metal single crystals.
As shown in fig. 8 to 10, the principle that a large-size metal single crystal can be obtained by the multi-arc cluster additive manufacturing method in the present embodiment is as follows:
firstly, the molten pool 13 is regulated and controlled by utilizing multiple electric arcs, so that the generated molten pool 13 is in the form of an edge convex interface combined with a middle approximate flat interface, as shown in fig. 8, which is a plate-shaped part, but the principle is also applicable to a rod-shaped or tubular part; at the approximately flat interface in the middle of the melt pool 13 as shown in fig. 9, since the crystal grows perpendicular to the solid-liquid interface, the metal single crystal grown from the substrate 10 can keep single crystal growth in the flat interface melt pool 13; at the convex interface of the edge of the molten pool 13 shown in fig. 10, the arc 12 at the edge has low heat input, and the arc contacts with air to cause high cooling speed, so that mixed crystals are newly generated at the edge of the part, and the growth direction of the mixed crystals is vertical to the solid-liquid interface, so that the growth of the mixed crystals is continuously guided to the outer side of the part until the mixed crystals are selected and then the growth of the mixed crystals is stopped, and the preparation of the single crystals with large size in the middle is ensured.
It should be noted that it will be apparent to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
The principles and embodiments of the present invention have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present invention; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (10)
1. An apparatus for producing a metal single crystal, characterized by: comprising the following steps: the welding gun comprises a substrate, a welding gun, a wire feeding assembly and a moving assembly, wherein the substrate is used for forming a metal monocrystal; the welding guns are provided with a plurality of welding guns, and the distribution form of all the welding guns is matched with the shape of the metal monocrystal to be manufactured; the wire feeding assembly comprises a wire feeding nozzle, the wire feeding nozzle is arranged close to the welding gun, the welding gun can generate electric arcs to melt wires conveyed by the wire feeding nozzle and enable the wires to be deposited on the substrate, the moving assembly can drive the welding gun and the wire feeding nozzle to move, and/or the moving assembly can drive the substrate to move.
2. The apparatus for producing a metal single crystal according to claim 1, wherein: the metal monocrystal manufacturing device further comprises a welding gun clamp, the welding gun and the wire feeding nozzles are mounted on the welding gun clamp, the wire feeding nozzles are arranged between adjacent welding guns, and the moving assembly is used for driving the welding gun clamp to move.
3. The apparatus for producing a metal single crystal according to claim 2, wherein: the metal single crystal manufacturing apparatus further includes a stage on which the substrate is placed, wherein the substrate is the same material as the metal single crystal.
4. The apparatus for producing a metal single crystal according to claim 3, wherein: the front end of the welding gun is provided with a tungsten electrode, and the anode and the cathode of the welding machine of the welding gun are respectively and electrically connected with the workbench and the welding gun, so that welding current can pass through the tungsten electrode and an arc is generated between the tungsten electrode and the prepared metal single crystal structural member.
5. The apparatus for producing a metal single crystal according to claim 4, wherein: the welding machine is also connected with a protective gas tank, and protective gas in the protective gas tank can be conveyed to the welding gun through the welding machine.
6. The apparatus for producing a metal single crystal according to claim 3, wherein: the metal single crystal manufacturing device further comprises an auxiliary heating device, and the auxiliary heating device can be used for auxiliary heating of the wire materials conveyed by the wire feeding nozzle.
7. The apparatus for producing a metal single crystal according to claim 6, wherein: the wire feeding nozzle is a conductive nozzle, the auxiliary heating device is a hot wire machine, and the anode and the cathode of the hot wire machine are respectively and electrically connected with the workbench and the conductive nozzle so as to generate resistance heat for auxiliary heating of the wire.
8. The apparatus for producing a metal single crystal according to claim 1, wherein: the wire feeding assembly further comprises a wire feeding unit, the wire feeding unit comprises a plurality of wire feeding machines, the wire feeding machines are in one-to-one correspondence with the wire feeding nozzles, and the wire feeding machines are used for feeding wires to the corresponding wire feeding nozzles.
9. The apparatus for producing a metal single crystal according to claim 1, wherein: the welding gun clamp comprises two cuboid clamping plates which are buckled with each other, and a plurality of first mounting holes and a plurality of second mounting holes are formed between the two cuboid clamping plates, wherein the first mounting holes are used for mounting the welding gun, and the second mounting holes are used for mounting the wire feeding nozzle;
or, the welding gun clamp comprises a disc-shaped mounting plate, wherein a plurality of first mounting holes and a plurality of second mounting holes are alternately distributed on the outer edge of the disc-shaped mounting plate along the circumferential direction, the first mounting holes are used for mounting the welding gun, and the second mounting holes are used for mounting the wire feeding nozzle; the diameter of the first mounting hole is larger than that of the welding gun, and the welding gun is fastened in the corresponding first mounting hole through a bolt; the center position of the disc-shaped mounting plate is provided with a first mounting hole, one side of the edge of the first mounting hole is provided with a protruding mounting wall, and the corresponding welding gun is fastened by penetrating through the mounting wall through a bolt.
10. A method for producing a metal single crystal, characterized by comprising: the metal single crystal production apparatus according to any one of claims 1 to 9, comprising the steps of:
s1: mounting the substrate on an additive manufacturing table;
s2: clamping a plurality of welding guns and wire feeding nozzles according to a preset structural form;
s3: starting the welding gun, applying low-frequency pulse current to start an arc, and preheating the substrate;
s4: the heated wire is sent to an electric arc through the wire feeding nozzle, the welding gun and the wire feeding nozzle are driven to move along a preset path through the moving assembly, and a molten pool with stable growth positions of the metal single crystals is maintained through cooperative regulation and control of multiple electric arcs so as to ensure the growth process of the metal single crystals;
s5: and under the protection gas environment, the wire is melted and deposited on the substrate under the action of an electric arc, and the metal single crystal structural member is obtained by layer-by-layer deposition in a preset path.
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