CN116994943A - Preparation method of N-type tellurium alkene based on iodine vapor doping method - Google Patents
Preparation method of N-type tellurium alkene based on iodine vapor doping method Download PDFInfo
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 title claims abstract description 206
- 229910052740 iodine Inorganic materials 0.000 title claims abstract description 206
- 239000011630 iodine Substances 0.000 title claims abstract description 206
- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 177
- -1 tellurium alkene Chemical class 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000007787 solid Substances 0.000 claims abstract description 69
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 54
- 230000005669 field effect Effects 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 description 51
- 238000012546 transfer Methods 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000013507 mapping Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001027 hydrothermal synthesis Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- VOADVZVYWFSHSM-UHFFFAOYSA-L sodium tellurite Chemical compound [Na+].[Na+].[O-][Te]([O-])=O VOADVZVYWFSHSM-UHFFFAOYSA-L 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/18—Selenium or tellurium only, apart from doping materials or other impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
Abstract
The application discloses a preparation method of N-type tellurium alkene based on an iodine vapor doping method, which comprises the following steps: providing a two-dimensional tellurium alkene; and (3) placing the two-dimensional tellurium into a closed cavity, and doping the two-dimensional tellurium by iodine vapor to obtain the N-type tellurium. Wherein doping the two-dimensional tellurium alkene with iodine vapor comprises: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours. Based on the above, the embodiment of the application also provides the N-type tellurium alkene prepared by the preparation method, an N-type tellurium alkene field effect transistor based on an iodine vapor doping method and a preparation method thereof. The application uses iodine vapor for doping, and has simple and controllable process, short preparation period, safety and no pollution.
Description
Technical Field
The application relates to the technical field of field effect transistor modification of semiconductor devices, in particular to a preparation method of an N-type tellurium alkene field effect transistor based on an iodine vapor doping method.
Background
Two-dimensional materials have great potential for application in the fields of electronics, optoelectronics and sensing. However, compared with the conventional silicon process production line, the two-dimensional material has a long path to travel, for example, the doping process of the two-dimensional material is not mature enough, and the appearance of the novel two-dimensional material forms a great challenge for accurately and stably controlling effective doping for a long time. Ideally, the two-dimensional crystal atoms need to be replaced by determining appropriate parameters, and the carrier concentration can be effectively and accurately controlled, so that the control can be effectively carried out in a later low-energy-consumption circuit. The doping process for the two-dimensional material is not only the requirement of the future electronic industry on the channel material, but also a necessary experimental process for acquiring the physical and chemical characteristics of the two-dimensional material.
The application of the tellurium with atomic-scale thickness in the field effect transistor channel material has the following advantages compared with the traditional silicon: higher mobility; the current switch is relatively high; is very stable in air. For the doping of tellurium with the atomic-scale thickness, an efficient and simple method is not yet available.
Disclosure of Invention
Aiming at the defects of the prior art, the application discloses a preparation method of an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method.
According to a first aspect of an embodiment of the present application, there is provided a method for preparing an N-type tellurium alkene based on an iodine vapor doping method, the method comprising:
providing a two-dimensional tellurium alkene;
and (3) placing the two-dimensional tellurium into a closed cavity, and doping the two-dimensional tellurium by iodine vapor to obtain the N-type tellurium.
Further, doping the two-dimensional tellurium alkene with iodine vapor includes: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours. Preferably, the solid iodine is heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
According to a second aspect of the embodiment of the application, there is provided an N-type tellurium alkene, which is prepared by the preparation method of the N-type tellurium alkene based on the iodine vapor doping method.
According to a third aspect of the embodiment of the present application, there is provided a method for preparing an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method, the method comprising:
providing a two-dimensional tellurium alkene;
placing two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample;
preparing a source electrode and a drain electrode at two ends of a first sample;
and inversely placing the first sample into the closed cavity, and doping the two-dimensional tellurium by iodine vapor to prepare the gate dielectric layer.
Further, gold/palladium electrodes are selected for both the source and drain electrodes.
Further, doping the two-dimensional tellurium alkene with iodine vapor includes: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours. Preferably, the solid iodine is heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
According to a fourth aspect of the embodiment of the present application, an N-type tellurium-alkene field effect transistor is provided, which includes the N-type tellurium alkene described above or the preparation method of the N-type tellurium-alkene field effect transistor based on the iodine vapor doping method described above.
According to a fifth aspect of the embodiment of the present application, there is provided a chip, including a chip body and an N-type tellurium field effect transistor as described above, wherein the N-type tellurium field effect transistor is disposed on the chip body.
According to a sixth aspect of the embodiment of the present application, there is provided a circuit, including a circuit board main body and the above chip, wherein the chip is disposed on the circuit board main body.
According to a seventh aspect of embodiments of the present application, there is provided an apparatus comprising a housing and the above-described circuit, wherein the circuit is disposed on the housing.
Compared with the prior art, the application has the beneficial effects that:
(1) According to the application, iodine vapor is used for doping the two-dimensional tellurium, the two-dimensional tellurium which is originally P-type is doped into N-type tellurium, and the N-type tellurium field effect transistor is prepared based on the N-type tellurium.
(2) The application carries out detailed research on the doping process of iodine vapor, and finds out an efficient doping parameter of iodine vapor by adjusting the thermodynamic process of the iodine vapor.
(3) The preparation method has the advantages of simple and controllable process, short preparation period, safety, no pollution and low cost. According to the actual production requirement, the material or the device can be flexibly doped, and no obvious impurity is generated after doping.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a flow chart of a preparation method of N-type tellurium alkene based on an iodine vapor doping method provided by an embodiment of the application;
FIG. 2 is a photomicrograph of a two-dimensional tellurium alkene provided by an embodiment of the present application;
FIG. 3 is a photomicrograph of a two-dimensional tellurium-alkene doping before and after the doping of the two-dimensional tellurium-alkene provided by the embodiment of the present application;
FIG. 4 is a diagram of a scanning electron microscope of an N-type tellurium alkene provided by an embodiment of the present application;
fig. 5 is a flowchart of a method for preparing an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method according to an embodiment of the present application;
FIG. 6 is a schematic view of a closed cavity according to an embodiment of the present application;
FIG. 7 is a scanning electron microscope image of an N-type tellurium-alkene field effect transistor provided by the embodiment of the application;
FIG. 8 is a photomicrograph of an N-type tellurium-olefin field effect transistor provided by an embodiment of the present application;
FIG. 9 is a graph showing the transfer characteristics of an N-type tellurium-olefin field effect transistor obtained in example 1 of the present application;
FIG. 10 is a graph showing the transfer characteristics corresponding to the product obtained in example 2 of the present application;
FIG. 11 is a graph showing the transfer characteristics of the product obtained in example 3 of the present application;
FIG. 12 is a graph showing the transfer characteristics of the product obtained in example 4 of the present application;
FIG. 13 is a graph showing the transfer characteristics of the product obtained in example 6 of the present application.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the application. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.
The application aims to provide a preparation method of N-type tellurium based on an iodine vapor doping method, which is used for successfully doping P-type tellurium with a narrow band gap to form an N-type semiconductor. The method is simple and is carried out at a lower temperature without any effect on the device itself. The process has good repeatability and has an important potential means for mass production of the tellurium alkene field effect transistor in the future. The N-type tellurium alkene prepared by the method can be used as a grid electrode in an effect transistor, and can effectively control source-drain current. The method utilizes the chemical activity of tellurium alkene to form a layer of oxide film on the tellurium surface to form a compact gate dielectric. The method has good repeatability and low cost, and is easy to mass produce the gate dielectric of the tellurium-alkene field effect transistor in the industry in the future.
The present application will be described in detail with reference to the accompanying drawings. The features of the examples and embodiments described below may be combined with each other without conflict.
As shown in fig. 1, the application provides a preparation method of N-type tellurium alkene based on an iodine vapor doping method, which specifically comprises the following steps:
s100, providing two-dimensional tellurium alkene.
In the examples of the present application, two-dimensional tellurium was prepared using the procedure of Wang YIxiu, qia Gang, wang ruxing, et al, field-effect transistors made from solution-grown two-dimensional tellurene [ J ]. Nature Electronics, 2018, 1 (4): 228-236. Doi: 10.1038/s41928-018-0058-4 ]. Comprising the following steps:
0.1g of sodium tellurite and 0.5g of polyvinylpyrrolidone with molecular weight of 58000 are dissolved in 33mL of deionized water with electric conductivity of 18.2M omega. Cm, stirred for 30 minutes under a magnetic stirrer to form a solution A with concentration of 0.014mol/L, then 1.65mL of hydrazine hydrate and 3.3mL of ammonia water are mixed to form a solution B, the solution B is added into the solution A, the solution A is placed into a hydrothermal reaction vessel, the solution is reacted in an oven at 160 ℃ for 30 hours after sealing, and the product is taken out, a microscopic photograph of the product two-dimensional tellurium is obtained, the two-dimensional tellurium is repeatedly washed for a plurality of times by acetone and isopropanol, and the product two-dimensional tellurium is transferred onto a 100nm SiO2/Si P++ substrate.
Further, the hydrothermal reaction container is selected from a reaction kettle, an electric pressure cooker, a soup pot or a beaker.
S110, placing the two-dimensional tellurium into a closed cavity, and doping the two-dimensional tellurium by iodine vapor to obtain the N-type tellurium. The comparison of the doping before and after the doping is shown in fig. 3, a in fig. 3 is a narrow bandgap P-type two-dimensional tellurium alkene before the doping, and b in fig. 3 is an N-type tellurium alkene obtained by the doping.
Wherein doping the two-dimensional tellurium alkene with iodine vapor comprises: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours. Preferably, the solid iodine is heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
The embodiment of the application also provides the N-type tellurium alkene, which is prepared by the preparation method of the N-type tellurium alkene based on the iodine vapor doping method. The method successfully dopes the tellurium which is originally of a narrow band gap P type into an N type semiconductor.
In the process of placing the two-dimensional tellurium into a closed cavity, solid iodine is placed at the bottom of the closed cavity, and the two-dimensional tellurium is placed at the top of the closed cavity, in particular, the surface to be doped is required to face down, so that the solid iodine sublimates into iodine vapor, and the iodine vapor contacts with the surface to be doped to finish the doping of the two-dimensional tellurium.
Further, the element content was characterized by EDS mapping of a scanning electron microscope to obtain the results of FIG. 4. Fig. 4 (a) is a picture of the obtained product under a Scanning Electron Microscope (SEM), fig. 4 (B) is a representation of the content of tellurium element, fig. 4 (C) is a representation of the content of iodine element, and it can be seen from EDS mapping results of fig. 4 that iodine element is detected on a two-dimensional crystal of tellurium alkene, indicating that the process of iodine doping is effective.
The embodiment of the application also provides the N-type tellurium alkene, which is prepared by the preparation method of the N-type tellurium alkene based on the iodine vapor doping method.
As shown in fig. 5, an embodiment of the present application provides a method for preparing an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method, the method comprising:
in step S200, two-dimensional tellurium is provided, and the two-dimensional tellurium is placed on a silicon/silicon dioxide substrate, so as to obtain a first sample.
In the examples of the present application, two-dimensional tellurium was prepared using the procedure of Wang YIxiu, qia Gang, wang ruxing, et al, field-effect transistors made from solution-grown two-dimensional tellurene [ J ]. Nature Electronics, 2018, 1 (4): 228-236. Doi: 10.1038/s41928-018-0058-4 ]. Comprising the following steps:
dissolving 0.1g of sodium tellurite and 0.5g of polyvinylpyrrolidone with molecular weight of 58000 in 33mL of deionized water with conductivity of 18.2M omega. Cm, stirring for 30 minutes under a magnetic stirrer to form a solution A with concentration of 0.014mol/L, then mixing 1.65mL of hydrazine hydrate and 3.3mL of ammonia water to form a solution B, adding the solution B into the solution A, placing the solution A into a hydrothermal reaction container, sealing, reacting in a 160 ℃ oven for 30 hours, taking out the solution, obtaining a product two-dimensional tellurium alkene with synthetic width of about 15 micrometers and thickness of only tens of nanometers, repeatedly washing the product two-dimensional tellurium alkene with acetone and isopropanol for a plurality of times, and transferring the product two-dimensional tellurium alkene to a substrate with SiO2/Si P++ of 100 nm.
Further, the hydrothermal reaction container is selected from a reaction kettle, an electric pressure cooker, a soup pot or a beaker.
Step S210, placing two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample;
step S220, preparing a source electrode and a drain electrode at two ends of the first sample to obtain a second sample;
specifically, a source electrode and a drain electrode are prepared at two ends of the first sample through a standard micro-nano processing flow (spin coating, exposure, development and evaporation), and in this example, gold/palladium electrodes are selected as the source electrode and the drain electrode.
Step S230, inversely placing a second sample into the closed cavity, and doping the two-dimensional tellurium alkene by iodine vapor to prepare a gate dielectric layer; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours. Preferably, the solid iodine is heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
It should be noted that, as shown in fig. 6, in the process of placing two-dimensional tellurium into a closed cavity, solid iodine is placed at the bottom of the closed cavity, and a second sample is placed at the top of the closed cavity, in particular, the second sample is placed in the closed cavity upside down, so that the surface to be doped is required to be downward, and thus the solid iodine sublimates into iodine vapor, and the iodine vapor contacts with the surface to be doped to complete doping, thereby obtaining the N-type tellurium field effect transistor.
In this example, the steps of preparing the source electrode, the drain electrode and doping with iodine vapor may be interchanged, and the sequence is not limited, i.e. doping two-dimensional tellurium alkene with iodine vapor may be performed first, and then the source electrode and the drain electrode may be processed.
In summary, the present application is directed to preparing a high performance tellurium-alkene field effect transistor, and performing N-type doping on tellurium at a lower temperature by using iodine vapor. The method is simple and easy to repeat, and the doped field effect transistor shows the characteristic of N type, so that the method is an efficient preparation method. Has the characteristics of good repeatability, simple operation, low cost and convenient industrialization. Provides a new technical means for the future large-scale application of the tellurium alkene in the chip field.
The embodiment of the application also provides an N-type tellurium-alkene field effect transistor which comprises the N-type tellurium alkene or is prepared by the preparation method of the N-type tellurium-alkene field effect transistor based on the iodine vapor doping method.
Example 1
This example 1 is a preferred embodiment, and the steps for preparing an N-type tellurium-ene field effect transistor are as follows:
step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
And S2, inversely placing the clean first sample obtained in the step S1 into a closed cavity, doping the two-dimensional tellurium by iodine vapor, heating the solid iodine to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours, and obtaining a second sample.
And S3, preparing a simple two-end device with two gold/palladium electrodes of a source and a drain by using the second sample obtained in the step S2 through a standard micro-nano processing flow (spin coating, exposure, development and evaporation). A scanning electron microscope of the device is shown in fig. 7. A micrograph of a two-dimensional tellurium-in-one column of tellurium field effect transistors is shown in fig. 8.
Step S4, a transfer characteristic curve of the standard semiconductor test field effect transistor, namely an IV curve obtained by testing a current-voltage curve between a source electrode and a drain electrode is carried out by using the probe station and the semiconductor tester, and the transfer characteristic curve is shown in fig. 9. This is a transfer characteristic with an N-type semiconductor as is evident from the transfer characteristic curve of fig. 9. The original two-dimensional tellurium alkene transfer characteristic is P-type, and the preferred example 1 illustrates that the method successfully changes the P-type tellurium alkene into an N-type semiconductor through doping of iodine vapor.
Example 2
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
Step S2: and (2) inversely placing the clean first sample obtained in the step (S1) into a closed cavity, heating to 30 ℃ for 5 hours, and taking out to obtain a second sample.
Step S3: the second sample in step S2 was subjected to a standard micro-nano process flow (spin-coating-exposure-development-evaporation) to prepare a simple two-terminal device with two gold/palladium electrodes of source and drain.
Step S4: the transfer characteristic curve of a standard semiconductor test field effect transistor is performed with a probe station and a semiconductor tester. The transfer characteristic is shown in fig. 10.
In this example 2, the addition of iodine was removed, and the transfer characteristic curve was found to be P-type, which is characteristic of the P-type of tellurium alkene itself. Therefore, the application is proved to realize the N-type conversion by doping iodine, and is irrelevant to heating temperature and time.
Example 3
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
Step S2: and (2) inversely placing the clean first sample obtained in the step (S1) into a closed cavity, doping the two-dimensional tellurium by iodine vapor, and taking out the sample after placing solid iodine into the cavity and heating the solid iodine to 30 ℃ for 3 hours to obtain a second sample.
Step S3: the second sample in step S2 was subjected to a standard micro-nano process flow (spin-coating-exposure-development-evaporation) to prepare a simple two-terminal device with two gold/palladium electrodes of source and drain.
Step S4: the transfer characteristic curve of a standard semiconductor test field effect transistor is performed with a probe station and a semiconductor tester. The transfer characteristic is shown in fig. 11 (a), and a photomicrograph of the device is shown in fig. 11 (B).
This example 3 is a reduction in doping time and was found to be less than ideal. As can be seen from the transfer characteristic curve of fig. 11, the carrier thereof has a partial void, a partial electron, and has not yet completely achieved N-type conversion.
Example 4
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
Step S2: and (2) inversely placing the clean first sample obtained in the step (S1) into a closed cavity, doping the two-dimensional tellurium by iodine vapor, and taking out the sample after placing solid iodine into the cavity and heating the solid iodine to 30 ℃ for 7 hours to obtain a second sample.
Step S3: the second sample in step S2 was subjected to a standard micro-nano process flow (spin-coating-exposure-development-evaporation) to prepare a simple two-terminal device with two gold/palladium electrodes of source and drain.
Step S4: the transfer characteristic curve of a standard semiconductor test field effect transistor is performed with a probe station and a semiconductor tester. The transfer characteristic is shown in fig. 12 (a), and a photomicrograph of the device is shown in fig. 12 (B).
Example 4 the iodine doping time was prolonged to 7 hours, and the field effect transistor was changed to N-type as shown in the transfer characteristic diagram 12. This example illustrates that after 5 hours, the effect of N-type doping with iodine vapor is achieved.
Example 5
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
Step S2: and (3) inversely placing the clean first sample obtained in the step (S1) into a closed cavity, doping the two-dimensional tellurium by iodine vapor, and taking out the sample after placing solid iodine into the cavity and heating the solid iodine to 30 ℃ for 10 hours to obtain a second sample.
Step S3: the second sample in S2 was subjected to standard micro-nano processing (spin-coating-exposure-development-evaporation) to prepare a simple two-terminal device with two gold/palladium electrodes for source and drain.
Step S4: the transfer characteristic curve of a standard semiconductor test field effect transistor is performed with a probe station and a semiconductor tester.
This example 5 continues to lengthen the doping time, however, the source/drain of the field effect transistor is disconnected. This example illustrates that doping times that are not too long can affect the semiconductor properties of the channel material itself.
Example 6
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
Step S2: and (3) putting the clean first sample obtained in the step (S1) into a closed cavity, doping the two-dimensional tellurium alkene by iodine vapor, heating to 30 ℃ for 7 hours by putting solid iodine, and taking out to obtain a second sample.
Step S3: the second sample in S2 was subjected to standard micro-nano processing (spin-coating-exposure-development-evaporation) to prepare a simple two-terminal device with two gold/palladium electrodes for source and drain.
Step S4: the transfer characteristic curve of a standard semiconductor test field effect transistor is performed with a probe station and a semiconductor tester. The transfer characteristic is shown in fig. 13 (a), and a photomicrograph of the device is shown in fig. 13 (B).
This example 6 is a sample being doped, and from the transfer profile 13 it can be seen whether the field effect transistor is a P-type feature. The effect of doping the sample is not good.
Example 7
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 33 ℃ to sublimate the solid iodine into iodine vapor for 4 hours.
By characterizing the elemental content of the product obtained in example 7 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 7 was effective.
Example 8
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 35 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
By characterizing the elemental content of the product obtained in example 8 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 8 was effective.
Example 9
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 38 ℃ to sublimate the solid iodine into iodine vapor for 4.5 hours.
By characterizing the elemental content of the product obtained in example 9 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 9 was effective.
Example 10
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 40 ℃ to sublimate the solid iodine into iodine vapor for 6 hours.
By characterizing the elemental content of the product obtained in example 10 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 10 was effective.
Example 11
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 42 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
By characterizing the elemental content of the product obtained in example 11 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 11 was effective.
Example 12
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 45 ℃ to sublimate the solid iodine into iodine vapor for 9 hours.
By characterizing the elemental content of the product obtained in example 12 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium, indicating that the iodine doping process in example 12 was effective.
Example 13
Step S1: providing a two-dimensional tellurium alkene;
step S2: the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: the solid iodine was heated to 45 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
By characterizing the elemental content of the product obtained in example 13 by EDS mapping with a scanning electron microscope, it was observed that iodine was detected on the two-dimensional crystals of tellurium alkene, indicating that the iodine doping process in example 13 was effective.
Example 14
Step S1, providing two-dimensional tellurium alkene, and placing the two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample.
And S2, inversely placing the clean first sample obtained in the step S1 into a closed cavity, doping the two-dimensional tellurium by iodine vapor, heating the solid iodine to 32 ℃ to sublimate the solid iodine into iodine vapor for 9 hours, and obtaining a second sample.
And step S3, preparing a simple two-end device with two gold/palladium electrodes of a source and a drain on a second sample.
Step S4, the transfer characteristic curves of the devices at the two ends are tested by using a probe station and a semiconductor tester through standard semiconductors, and the transfer characteristic curves are observed, so that the device prepared in the embodiment 14 shows the characteristics of an N-type semiconductor, and the fact that the embodiment 14 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
Example 15
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 34 ℃ for 8 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in the example 15 are obtained, and the transfer characteristic curves are observed, so that the device prepared in the example 15 shows the characteristics of an N-type semiconductor, and the fact that the example 15 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
Example 16
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 36 ℃ for 6 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in example 16 are obtained, and the transfer characteristic curves are observed, so that the device prepared in example 16 shows the characteristics of an N-type semiconductor, and the fact that example 16 successfully changes P-type tellurium into an N-type semiconductor through doping of iodine vapor is explained.
Example 17
In comparison to example 14, the only difference is that the two-dimensional tellurium is doped by iodine vapor, and the solid iodine is sublimated into iodine vapor by heating the solid iodine to 38 ℃ for 5 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in the example 17 are obtained, and the transfer characteristic curves are observed, so that the device prepared in the example 17 presents the characteristics of an N-type semiconductor, and the fact that the example 17 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
Example 18
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 40 ℃ for 8 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in the example 18 are obtained, and the transfer characteristic curves are observed, so that the device prepared in the example 18 presents the characteristics of an N-type semiconductor, and the fact that the example 18 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
Example 19
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 42 ℃ for 5 hours.
The transfer characteristic curves corresponding to the two-end devices prepared in example 19 were obtained, and the transfer characteristic curves were observed, so that the devices prepared in example 19 exhibited N-type semiconductor characteristics, which indicated that example 19 successfully changed the P-type tellurium alkene into an N-type semiconductor by doping with iodine vapor.
Example 20
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 44 ℃ for 6 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in the example 20 are obtained, and the transfer characteristic curves are observed, so that the device prepared in the example 20 shows the characteristics of an N-type semiconductor, and the fact that the example 20 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
Example 21
In comparison to example 14, the only difference was that the two-dimensional tellurium alkene was doped by iodine vapor, and the solid iodine was sublimated into iodine vapor by heating the solid iodine to 45 ℃ for 4 hours.
The transfer characteristic curves corresponding to the devices at the two ends prepared in the example 21 are obtained, and the transfer characteristic curves are observed, so that the device prepared in the example 21 presents the characteristics of an N-type semiconductor, and the fact that the example 21 successfully changes the P-type tellurium alkene into the N-type semiconductor through doping of iodine vapor is explained.
It should be noted that the embodiment of the present application further provides a chip, which may include a chip body and the N-type tellurium-ene field effect transistor in the above embodiment, where the N-type tellurium-ene field effect transistor is disposed on the chip body.
The embodiment of the application also provides a circuit which can comprise a circuit board main body and the chip in the embodiment, wherein the circuit is arranged on the circuit board main body.
The embodiment of the application also provides a device, and the integrated storage device can comprise a shell and the circuit in the embodiment, wherein the circuit is arranged on the shell.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. The specification and examples are to be regarded in an illustrative manner only.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof.
Claims (10)
1. The preparation method of the N-type tellurium alkene based on the iodine vapor doping method is characterized by comprising the following steps of:
providing a two-dimensional tellurium alkene;
the two-dimensional tellurium alkene is placed in a closed cavity, and the two-dimensional tellurium alkene is doped through iodine vapor, so that N-type tellurium alkene is obtained; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours.
2. The method for preparing the N-type tellurium alkene based on the iodine vapor doping method as set forth in claim 1, wherein doping the two-dimensional tellurium alkene by iodine vapor comprises: the solid iodine was heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
3. An N-type tellurium alkene, characterized in that it is produced by the process for producing an N-type tellurium alkene based on the iodine vapor doping method as claimed in claim 1 or 2.
4. The preparation method of the N-type tellurium-alkene field effect transistor based on the iodine vapor doping method is characterized by comprising the following steps of:
providing a two-dimensional tellurium alkene;
placing two-dimensional tellurium alkene on a silicon/silicon dioxide substrate with a back electrode to obtain a first sample;
preparing a source electrode and a drain electrode at two ends of a first sample;
inversely placing the first sample into a closed cavity, doping two-dimensional tellurium by iodine vapor, and preparing a gate dielectric layer; wherein the doping of the two-dimensional tellurium alkene with iodine vapor comprises: heating the solid iodine to 30-45 ℃ to sublimate the solid iodine into iodine vapor for 4-9 hours.
5. The method for manufacturing an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method of claim 4, wherein gold/palladium electrodes are used for both the source and drain electrodes.
6. The method for manufacturing an N-type tellurium-alkene field effect transistor based on an iodine vapor doping method of claim 5, wherein doping the two-dimensional tellurium alkene by iodine vapor comprises: the solid iodine was heated to 30 ℃ to sublimate the solid iodine into iodine vapor for 5 hours.
7. An N-type tellurium-ene field effect transistor, characterized by comprising an N-type tellurium-ene as claimed in claim 3 or being produced by the method for producing an N-type tellurium-ene field effect transistor based on an iodine vapor doping method as claimed in any one of claims 4 to 6.
8. A chip comprising a chip body and the N-type tellurium field effect transistor of claim 7, wherein the N-type tellurium field effect transistor is disposed on the chip body.
9. A circuit comprising a circuit board body and the chip of claim 8, wherein the chip is disposed on the circuit board body.
10. An apparatus comprising a housing and the circuit of claim 9, wherein the circuit is disposed on the housing.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1715532A1 (en) * | 2005-04-21 | 2006-10-25 | INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH | Process for the formation of polymeric electrically conductive films |
| CN105544017A (en) * | 2016-01-27 | 2016-05-04 | 浙江大学 | High-conductivity graphene fiber and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1715532A1 (en) * | 2005-04-21 | 2006-10-25 | INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH | Process for the formation of polymeric electrically conductive films |
| CN105544017A (en) * | 2016-01-27 | 2016-05-04 | 浙江大学 | High-conductivity graphene fiber and preparation method thereof |
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| GANG QIU ET AL: "Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene", 《NATURE》, pages 585 - 591 * |
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