CN116990887A - Film system structure and manufacturing method thereof - Google Patents
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- CN116990887A CN116990887A CN202210449056.XA CN202210449056A CN116990887A CN 116990887 A CN116990887 A CN 116990887A CN 202210449056 A CN202210449056 A CN 202210449056A CN 116990887 A CN116990887 A CN 116990887A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 100
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 150000003346 selenoethers Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 158
- 238000001228 spectrum Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000012788 optical film Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Abstract
The invention discloses a membrane system structure and a manufacturing method thereof. The film system structure is as follows: sub| ((HL)/(a (2H)/(b (LH))c (2L)/(d))e (HL)/(a (2H)/(b (LH))f|air; wherein Sub is a substrate, air is emergent medium Air, H is a high refractive index material with 1/4 central wavelength optical thickness, L is a low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f are all positive integers; wherein, (HL) ≡a represents that an H film layer and an L film layer are sequentially deposited and repeated for a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times. The technical scheme of the embodiment of the invention can be used for correcting the relative proportion of the optical thickness of the high-low refractive index material while correcting the uniformity of the film thickness, and has the characteristics of accuracy and high efficiency.
Description
Technical Field
The embodiment of the invention relates to the technical field of optical films, in particular to a film system structure and a manufacturing method thereof.
Background
Along with the daily and monthly variation of science and technology, the optical film is widely applied to the fields of civil use, military use and the like; at the same time, the market demand for optical film products is also increasing, and how to efficiently manufacture optical film elements at low cost is an important issue.
In the preparation of optical films, uniformity of the film elements and thickness matching of the prepared film elements are very important performance parameters. The optical film has many kinds, the conventional film has long wave pass, short wave pass, high reflection film, antireflection film, etc., when the thickness of the high refractive index and low refractive index material is not 1:1, the spectra themselves will not differ much. In this case, a satisfactory product can be completely produced using a conventional correction method. However, for some films with higher precision, such as Edge Filter with high steepness, CWDM with high steepness, lan-WDM and other film systems, especially CWDM, lan-WDM and the like, the uniformity of the film element is good or bad, and the film thickness of the high-low refractive index material is matched, which directly relates to the yield of the film element.
The conventional film thickness correction method is mainly used for respectively correcting the film thickness uniformity and the film thickness proportion of the high-low refractive index material by respectively manufacturing the mask plates. However, the method has great defects, firstly, the high-low refractive index material cannot be effectively matched with the film thickness proportion; secondly, the film thickness uniformity precision cannot meet the preparation of high-precision films.
Disclosure of Invention
The embodiment of the invention provides a film system structure and a manufacturing method thereof, which can correct the accuracy of the relative proportion of the optical thickness of a high refractive index material and a low refractive index material while correcting the uniformity of film thickness.
In a first aspect, an embodiment of the present invention provides a film structure, where the film structure is:
Sub|((HL)^a(2H)^b(LH)^c(2L)^d)^e(HL)^a(2H)^b(LH)^c fL|Air；
wherein Sub is a substrate, air is emergent medium Air, H is a high refractive index material with 1/4 central wavelength optical thickness, L is a low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f are all positive integers;
wherein, (HL) ≡a represents that an H film layer and an L film layer are sequentially deposited and repeated for a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times.
Alternatively, 1.ltoreq.a.ltoreq.5, 1.ltoreq.c.ltoreq.5.
Optionally, b is 1-2, d is 1-2, e is 1-2, and f is 1-2.
Optionally, the high refractive index material is Ta 2 O 5 、TiO 2 、HfO 2 、ZrO 2 Any one of sulfide and selenide.
Optionally, the low refractive index material is SiO 2 、Al 2 O 3 And MgF 2 Any one of them.
Optionally, the substrate is a quartz substrate, and the high refractive index material is Ta 2 O 5 The low refractive index material is SiO 2 。
Alternatively, a=5, b=2, c= 5,d = 3,e =1, f=1.
Optionally, the center wavelength is 1310nm.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a film structure, including:
providing a substrate;
according to the film system structure, sequentially growing a high refractive index material and a low refractive index material by adopting a physical vapor deposition mode;
wherein, the membrane system structure is:
Sub|((HL)^a(2H)^b(LH)^c(2L)^d)^e(HL)^a(2H)^b(LH)^c fL|Air；
wherein Sub is the substrate, air is emergent medium Air, H is high refractive index material with 1/4 central wavelength optical thickness, L is low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f are positive integers;
wherein, (HL) ≡a represents that an H film layer and an L film layer are sequentially deposited and repeated for a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times.
Optionally, growing the high refractive index material and the low refractive index material sequentially by physical vapor deposition according to the film structure, including:
according to the film system structure, a physical vapor deposition mode is adopted to sequentially grow high-refractive index materials and low-refractive index materials, the thickness relative proportion coefficient of the high-refractive index materials and the low-refractive index materials is judged according to the bandwidth between the corresponding wavelengths of the transmission peaks at the two sides of the central wavelength and the central wavelength, and when the optical thickness ratio of the high-refractive index materials and the low-refractive index materials deviates from 1:1, the relative thickness proportion of the high-refractive index materials and the low-refractive index materials is corrected.
According to the technical scheme provided by the embodiment of the invention, the film system structure is manufactured as follows: sub| (((HL)/(a (2H)/(LH)/(c (2L))/(d))/(e (HL)/(a (2H)/(LH) c fl|air)), the film structure is sensitive to the thickness ratio of the film material at the reference spectral characteristic peak wavelength, and the spectral characteristic peak of the film structure is insensitive to the heterogeneity of the material. In addition, the film system structure is a regular structure, the manufacturing mode is simple, the film thickness proportion distribution of the high-low refractive index material can be efficiently judged and corrected while the film thickness uniformity is corrected, the accuracy of the relative proportion of the optical thickness of the high-refractive index material and the optical thickness of the low-refractive index material is ensured, and the film system structure is particularly suitable for high-precision film elements such as CWDM, lan-WDM and the like.
Drawings
FIG. 1 is a schematic diagram of a spectrum of a film structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a design spectrum and an actually measured spectrum of a film structure according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
The film system structure provided by the embodiment of the invention is as follows: sub| ((HL)/(a (2H)/(b (LH))c (2L)/(d))e (HL)/(a (2H)/(b (LH))f|air; wherein Sub is a substrate, air is emergent medium Air, H is a high refractive index material with 1/4 of the optical thickness of the center wavelength, L is a low refractive index material with 1/4 of the optical thickness of the center wavelength, and a, b, c, d, e, f are all positive integers.
Wherein, (HL) ≡a represents depositing an H film layer and an L film layer in sequence and repeating a times. (2H) And b represents depositing an H film and repeating the H film b times in sequence, i.e., repeating the H film 2b times. (LH) ≡c represents that the L film and the H film are deposited in sequence and repeated c times. (2L) ≡d represents that the L film layer and the L film layer are sequentially deposited and repeated d times, i.e., the L film layer is repeated 2d times. The H film represents a high refractive index film comprising a high refractive index material. The L film represents a low refractive index film, which includes a low refractive index material. A high refractive index film is paired with an adjacent low refractive index film to form a high-low dual cell. Thus, (HL) ≡a represents a high-low dual units and (LH) ≡c represents c high-low dual units. It should be further noted that the layer units (HL)/(a), (2H)/(b), (LH)/(c) and (2L)/(d) may be combined as a single unit to form a stack, and that the layer stack (HL)/(a (2H)/(b (LH)/(c (2L)) lambda d) lambda e represents the stack (HL)/(a (2H)/(b (LH)/(c (2L)) lambda d) is repeated e times. fL represents that the L layers are repeated f times, i.e., the L layers are deposited f times in sequence.
The technical scheme of the embodiment provides a film system structure capable of correcting the film thickness uniformity of a high-precision film element and the relative proportion of the optical thickness of high-low refractive materials, and the film system structure is manufactured by the following steps: sub| (((HL)/(a (2H)/(LH)/(c (2L))/(d))/(e (HL)/(a (2H)/(LH) c fl|air)), the film structure is sensitive to the thickness ratio of the film material at the reference spectral characteristic peak wavelength, and the spectral characteristic peak of the film structure is insensitive to the heterogeneity of the material. In addition, the film system structure is a regular structure, the manufacturing mode is simple, the film thickness uniformity is corrected, meanwhile, the film thickness proportion distribution of the high-low refractive index material can be efficiently judged and corrected, and the accuracy of the relative proportion of the optical thickness of the high-refractive index material and the optical thickness of the low-refractive index material is ensured.
Optionally, in the film system structure, a is more than or equal to 1 and less than or equal to 5, and c is more than or equal to 1 and less than or equal to 5. Specifically, the values of a and c are positive integers.
Illustratively, when a=1, (HL) ≡a represents depositing an H film layer and an L film layer in this order; when a=5, (HL) ≡a denotes that the H film layer and the L film layer are sequentially deposited, that is, the H film layer, the L film layer, the H film layer, and the L film layer are sequentially deposited 5 times. Similarly, when c=1, (LH) ≡denotes depositing an L film layer and an H film layer in this order. When c=5, (LH) ≡denotes that the L film layer and the H film layer are sequentially deposited and repeated 5 times, that is, the L film layer, the H film layer, the L film layer, and the H film layer are sequentially deposited.
Optionally, in the film system structure, b is more than or equal to 1 and less than or equal to 2, d is more than or equal to 1 and less than or equal to 2, e is more than or equal to 1 and less than or equal to 2, and f is more than or equal to 1 and less than or equal to 2. The values of b, d, e and f are positive integers.
Illustratively, when b=1, (2H) ≡b represents depositing an H film layer and an H film layer in sequence. When b=2, (2H)/(b) represents that the H film layer and the H film layer are sequentially deposited and repeated 2 times, i.e., the H film layer is sequentially deposited 4 times. Similarly, when d=1, (2L) ≡d represents that the L film layer and the L film layer are sequentially deposited. When d=2, (2L) ≡d represents that the L film layer and the L film layer are sequentially deposited, and 2 times are repeated, that is, the L film layer is sequentially deposited 4 times. When e=2, ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeated 2 times. Taking a=1, b=1, c=1, d=1, e=2 as an example, ((HL) ≡a (2H) ≡b (LH) ≡c (2L) ≡d) ≡c) as a representation, H film, L film and L film are sequentially deposited, and then the just-described operation is repeated to re-form the above-described stack, i.e., H film, L film, H film, L film and L film are sequentially deposited. When f=1, fL represents depositing an L film layer. When f=2, fL represents the deposited L film layer and the L film layer.
Alternatively, the high refractive index material is Ta 2 O 5 、TiO 2 、HfO 2 、ZrO 2 Any one of sulfide and selenide. The low refractive index material is SiO 2 、Al 2 O 3 And MgF 2 Any one of them. The substrate is made of glass or crystal, and the glass can be any of K9 glass or quartz glass. It should be noted that the film structure of the present embodiment is not sensitive to the heterogeneity of materials, and is suitable for the preparation of the film element containing the heterogeneity materials commonly used in the laser films such as hafnium oxide, zirconium oxide, etc., and the wavelength designed in the film system can be arbitrarily selected according to the characteristics and requirements of the used equipment, and the number is not particularly limited.
The embodiment of the invention also designs and manufactures a Lan WDM narrow-band filter (an example of a thin film element) based on the film system structure.
Specifically, the Lan WDM narrow-band filter with half width smaller than 4nm and size of 40mm multiplied by 40mm caliber is prepared, and the film system is very sensitive to thickness, and meanwhile, in order to realize the spectrum uniformity in the whole size, the thickness proportion and uniformity requirements on high and low refractive index materials at any point in the size are very strict. Therefore, a film structure sub| ((HL)/(a (2H)/(b (LH)/(2L)/(d))e (HL)/(a (2H)/(LH)/(cfL |air) is adopted to simultaneously correct the thickness ratio and uniformity of the high refractive index material and the low refractive index material, wherein the substrate is a quartz substrate, and the high refractive index material is Ta) 2 O 5 The low refractive index material is SiO 2 . The repetition times of the film layer in the film system structure are as follows: a=5, b=2, c= 5,d = 3,e =1, f=1; the center wavelength of the thin film element using the film structure was 1310nm.
Based on the same inventive concept, the present embodiment may be applied to a method for manufacturing a film structure, where the method specifically includes:
step one, providing a substrate.
Alternatively, the substrate is glass or crystal, and the glass may be any of K9 glass or quartz glass.
And secondly, sequentially growing a high refractive index material and a low refractive index material by adopting a physical vapor deposition mode according to the film system structure.
Alternatively, by sequentially growing high and low refractive index dielectric film layers on any optical substrate by physical vapor deposition, the preparation of the film system can be easily realized by conventional optical monitoring or crystal oscillator monitoring.
Wherein, the membrane system structure is: sub| ((HL)/(a (2H)/(b (LH))c (2L)/(d))e (HL)/(a (2H)/(b (LH))|air. Sub is a substrate, air is emergent medium Air, H is a high refractive index material with 1/4 central wavelength optical thickness, L is a low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f is a positive integer; (HL) ≡a represents sequentially depositing an H film layer and an L film layer and repeating a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times.
The film structure manufacturing method of the present embodiment is used for manufacturing the film structure in the above embodiment, and the generated film structure is: sub| (((HL)/(a (2H)/(b) (LH))/(c (2L)/(d))/(e (HL)/(a (2H)/(LH))/(cfL |air) to achieve the correction of film thickness uniformity and ensure the accuracy of the relative proportion of optical thicknesses of high refractive index material and low refractive index material.
In the invention, the relative thickness ratio of the high refractive index film layer and the low refractive index film layer is corrected by judging the wavelength deviation corresponding to the wave crest.
Optionally, the step two may be specifically refined as follows: according to the film system structure, sequentially growing a high refractive index material and a low refractive index material by adopting a physical vapor deposition mode, judging the relative thickness ratio coefficient of the high refractive index material and the low refractive index material according to the bandwidth between the corresponding wavelengths of the transmission peaks at the two sides of the central wavelength and the central wavelength, and correcting the relative thickness ratio of the high refractive index material and the low refractive index material when the optical thickness ratio of the high refractive index material and the low refractive index material deviates from 1:1. That is, during the process by depositing the high refractive index film (i.e., H film) and the low refractive index film (i.e., L film), the relative thickness ratios of the high refractive index film and the low refractive index film are analyzed by their spectral characteristics (specifically, wavelength shifts corresponding to peaks).
Illustratively, referring to FIG. 1, the following film system structure is: sub| (((HL)/(a (2H)/(b) (LH)/(c) (2L)/(d))/(e (HL)/(a (2H)/(b) (LH)/(c) fL|air)) and sequentially growing a high refractive index material Ta by physical vapor deposition 2 O 5 And a low refractive index material SiO 2 At this time, 3 main characteristic peaks in the spectrum graph corresponding to the film system structure can be used for judging the thickness relative proportion coefficient of the high refractive index material and the low refractive index material according to the bandwidth between the transmission peak corresponding to the two sides of the central wavelength and the central wavelength, and when the transmission peak corresponding to the two sides is the same as the bandwidth of the central wavelength, the optical thickness ratio of the high refractive index material and the low refractive index material can be judged to be 1:1; when the widths of the two materials are inconsistent, the ratio of the optical thicknesses of the two materials deviates from 1:1, at this time, the ratio of the optical thicknesses of the two materials can be judged according to the difference of the two wavelengths, when the bandwidth of the left side is wider, the ratio of the optical thicknesses of the low refractive index material and the high refractive index material is smaller than 1, and when the bandwidth of the right side is wider, the ratio of the optical thicknesses of the low refractive index material and the high refractive index material is larger than 1, and finally the ratio of the relative thicknesses of the high refractive index material and the low refractive index material is corrected. After correction by the method, a narrow-band filter with the light transmission caliber of 40mm multiplied by 40mm and the bandwidth of 3.8nm is successfully prepared on the produced equipment provided with the transmission type direct monitoring film plating equipment, the uniformity of the center wavelength in the plane is less than 0.25nm, and the schematic diagrams of the designed spectrum and the actually measured spectrum are shown in figure 2.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A film system structure, characterized in that the film system structure is:
Sub|((HL)^a(2H)^b(LH)^c(2L)^d)^e(HL)^a(2H)^b(LH)^c fL|Air；
wherein Sub is a substrate, air is emergent medium Air, H is a high refractive index material with 1/4 central wavelength optical thickness, L is a low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f are all positive integers;
wherein, (HL) ≡a represents that an H film layer and an L film layer are sequentially deposited and repeated for a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times.
2. The film system structure of claim 1, wherein 1.ltoreq.a.ltoreq.5 and 1.ltoreq.c.ltoreq.5.
3. The membrane-based structure of claim 1, wherein,
1≤b≤2，1≤d≤2，1≤e≤2，1≤f≤2。
4. the film-based structure of claim 1, wherein the high refractive index material is Ta 2 O 5 、TiO 2 、HfO 2 、ZrO 2 Any one of sulfide and selenide.
5. The film-based structure of claim 1, wherein the low refractive index material is SiO 2 、Al 2 O 3 And MgF 2 Any one of them.
6. The film-based structure of claim 1, wherein the substrate is a quartz substrate and the high refractive index material is Ta 2 O 5 The low refractive index material is SiO 2 。
7. The film structure of claim 6, wherein a = 5, b = 2, c = 5,d = 3,e = 1, and f = 1.
8. A method of making a film structure, comprising:
providing a substrate;
according to the film system structure, sequentially growing a high refractive index material and a low refractive index material by adopting a physical vapor deposition mode;
wherein, the membrane system structure is:
Sub|((HL)^a(2H)^b(LH)^c(2L)^d)^e(HL)^a(2H)^b(LH)^c fL|Air；
wherein Sub is the substrate, air is emergent medium Air, H is high refractive index material with 1/4 central wavelength optical thickness, L is low refractive index material with 1/4 central wavelength optical thickness, and a, b, c, d, e, f are positive integers;
wherein, (HL) ≡a represents that an H film layer and an L film layer are sequentially deposited and repeated for a times; (2H) B represents sequentially depositing an H film and repeating b times; (LH) ≡c represents sequentially depositing an L film layer and an H film layer and repeating c times; (2L) ≡d represents sequentially depositing L film and repeating d times; ((HL)/(a (2H)/(b (LH)) c (2L)/(d)) e represents a film stack (HL)/(a (2H)/(b (LH)) c (2L)) d repeating e times; fL represents the repetition of the L film layer f times.
9. The method according to claim 8, wherein the high refractive index material and the low refractive index material are grown sequentially by physical vapor deposition according to the film structure, the thickness relative ratio of the high refractive index material to the low refractive index material is determined according to the bandwidth between the transmission peak corresponding wavelengths on both sides of the center wavelength and the center wavelength, and when the optical thickness ratio of the high refractive index material to the low refractive index material deviates from 1:1, the thickness relative ratio of the high refractive index material to the low refractive index material is corrected.
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