CN116988137A - Preparation method of CoMnSi spherical single crystal particles - Google Patents
Preparation method of CoMnSi spherical single crystal particles Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/142—Thermal or thermo-mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/145—Chemical treatment, e.g. passivation or decarburisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/012—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials adapted for magnetic entropy change by magnetocaloric effect, e.g. used as magnetic refrigerating material
- H01F1/015—Metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
Abstract
The invention aims to provide a manufacturing method of CoMnSi base alloy spherical single crystal particles, which comprises the following specific steps: 1) Preparation of CoM 10-200 micronsnSi-based alloy particles; 2) Uniformly mixing CoMnSi particles and a solid dispersing agent, performing deoxidation treatment, and sealing in a quartz tube; 3) Annealing the quartz tube at a temperature higher than the melting point of CoMnSi and a temperature lower than the melting point, and performing rapid quenching at 920-1170 ℃; 4) Separating the CoMnSi particles, and cleaning and drying the CoMnSi particles; 5) Encapsulating the CoMnSi particles in a vacuum quartz tube; 6) And (3) placing the quartz tube in a vacuum furnace, and annealing for a period of time at 500-900 ℃ to eliminate the internal stress of the particles. The molecular formula of the CoMnSi-based alloy is Co 1‑ x Ni x MnSi，0≤x≤0.1。
Description
Technical Field
The invention belongs to the field of powder metallurgy, and particularly relates to a manufacturing method of CoMnSi-based alloy spherical single crystal particles.
Background
In recent years, coMnSi-based intermetallic compounds have attracted a great deal of attention as a potential magnetic functional material. At temperatures below the Nel temperature, the strong magneto-elastic coupling effect present in CoMnSi-based alloy materials, when the system undergoes a magnetic phase transition from the antiferromagnetic state to the ferromagnetic state, the lattice constant thereof will undergo a drastic change, accompanied by a drastic magnetic card effect. The effect makes the CoMnSi material have potential application in the field of magnetostriction and magnetic refrigeration.
For the magnetostrictive application field, terfenol-D alloy (Tb x Dy (1-x) Fe 2 X is more than or equal to 0.27 and less than or equal to 0.35), the magnetic field is small, the stress output is large, the strain output is large, and the like, so that the magnetic field is the most famous and most widely used magnetostrictive material at present. However, the material itself has the defects of expensive rare earth cost, high intrinsic brittleness, harsh preparation process and the like. The CoMnSi based alloy is a cheaper potential magnetostrictive material, and the CoMnSi based alloy particle/binder composite material can just overcome the defects of the Terfenol-D alloy. The CoMnSi-based alloy has low raw material cost, and the resin bonding composite material is easy to machine and has low eddy current effect. Here, we will invent a high magnetostriction property, easily magnetic field oriented CoMnSi-based alloy particle, i.e., a CoMnSi-based alloy spherical single crystal particle, for a CoMnSi-based alloy bonded composite. The advantages of spherical single crystal particles are mainly represented by the following two aspects: 1. the loose loading and tap density of the spherical particles are higher than those of the particles with other shapes, which is beneficial to improving the magnetism in the composite materialAn upper limit of the alloy particle volume fraction; 2. the magnetic material has magnetocrystalline anisotropy. The magnetic anisotropy of the single crystal is stronger than that of the non-single crystal material, so that the high orientation degree can be obtained when the applied magnetic field is used for solidification orientation.
Generally, the preparation process of the metal single crystal material is complex, the production cost is high, and the single crystal material with uniform large-size components and performances is difficult to prepare. In practical production, an alternative method is generally adopted to prepare small-size single crystal particles, and a magnetic field orientation and adhesive curing method is adopted to prepare a composite material with high orientation degree so as to achieve physical properties similar to single crystals. At present, most of common magnetostrictive single crystal particles are prepared by an ingot breaking method. The particles prepared by the method have low single crystal degree, and the appearance is in a plurality of irregular shapes with sharp edges and rough surfaces. In the curing process of the composite material, the existence of the edges and corners not only can reduce the volume ratio of metal particles in the material, but also can prevent free rotation of small particles in the orientation process, thereby reducing the particle orientation degree of the composite material. Tang Shaolong et al have invented a method for preparing spherical single crystal grains of metal based on a dewetting mechanism of a liquid-solid interface and an abnormal grain growth mechanism of grains at high temperature. The preparation method of the metal spherical single crystal is applicable to preparing high-temperature phase-change-free alloy. If the alloy has phase change in the cooling process, the interior of the alloy is inevitably subjected to atomic structure recombination or grain nucleation and growth, and the metal particles are re-evolved into polycrystal in the cooling process. While a martensite phase transformation exists at the high temperature of the CoMnSi base alloy, in the cooling process, the CoMnSi base alloy parent phase austenite monocrystal prepared by the method for preparing the Tang Shaolong spherical monocrystal particles can be spontaneously sheared into a plurality of martensite twin crystals, and finally, the polycrystalline particles at room temperature are formed. The above-described method for producing spherical single crystal particles of a metal is not applicable to CoMnSi-based alloy particles.
The single-variant produced by inducing the mahalanobis phase transition is a key to realizing the preparation of the CoMnSi spherical single crystal. There are two main methods of inducing single variants: a magneto-thermal training method and a magnetic field training method. The magnetic-thermal training method is to circulate the material in a uniform magnetic field at a temperature rise and fall, so that the material is circularly subjected to the Otto-martensite phase transformation, and the directional growth of part of Mahalanobis variants is induced. The magnetic field training method is to put the material in a changing magnetic field, and induce part of the Marshall variants to grow to become single variants in the process of reorientation of the Marshall variants. Both methods are based on the principle that the mahalanobis variant tends to be in the lowest energy state in the magnetic field. However, the Marshall phase transition temperature of CoMnSi is around 1190K, well above its Neel temperature, i.e., the magnetically ordered temperature. Thus, the two above-described ways of inducing the growth of the martensii single variant are not applicable to inducing the growth of the CoMnSi single variant.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a preparation method of CoMnSi-based alloy spherical single crystal particles. The method improves the existing preparation method of the metal spherical single crystal particles, provides a transient low-temperature environment by using a rapid quenching process to greatly inhibit the spontaneous nucleation process of martensite in the Martensitic phase transition, simultaneously induces the growth of a single variant of the martensite of the CoMnSi-based alloy by using a transient unidirectional temperature gradient generated by the rapid quenching process, and obtains the martensite spherical single crystal particles of the low-internal stress CoMnSi at room temperature through subsequent annealing treatment. The preparation method has the characteristics of simple synthesis way, low production cost, high single crystal rate and the like.
The technical scheme of the invention is as follows:
a method for preparing CoMnSi-based alloy spherical single crystal particles, the method for preparing CoMnSi-based alloy spherical single crystal particles comprising the steps of:
a. preparing CoMnSi-based alloy particles;
b. uniformly mixing a solid dispersing agent and CoMnSi-based alloy particles, placing the mixture in a flowing reducing atmosphere, performing high-temperature annealing to perform deoxidation treatment, and then cooling to room temperature;
c. b, placing the CoMnSi-based alloy particles/solid dispersant mixture obtained in the step b into a quartz tube, and vacuumizing and sealing;
d. c, placing the quartz tube obtained in the step c into a high-temperature furnace, preserving heat for a period of time at 1170-1300 ℃, then rapidly reducing the furnace temperature to 920-1170 ℃ and preserving heat for a long time, then taking the quartz tube out of the furnace at 920-1170 ℃, and rapidly breaking the quartz tube in cooling water;
e. collecting the CoMnSi based alloy particles obtained in the step d by using a magnet attraction mode, and cleaning and drying the CoMnSi based alloy particles;
f. d, putting the CoMnSi-based alloy particles obtained in the step d into a quartz tube, and vacuumizing and sealing;
g. and d, placing the quartz tube obtained in the step f into a high-temperature furnace, heating to 500-900 ℃, preserving heat for a period of time, and naturally cooling to room temperature to obtain CoMnSi-based alloy particles.
Further, the chemical formula of the CoMnSi based alloy is Co 1-x Ni x MnSi，0≤x≤0.1。
Further, in the step a, the CoMnSi based alloy particles may be obtained by mechanically crushing a CoMnSi based alloy ingot, an electric spark method, a droplet discharge method, a commercial purchase, or the like.
Further, in the step b, the solid dispersing agent can be any size smaller than the particle size of the CoMnSi base alloy, the preferable size range is 100 nm-100 μm, the morphology can be sheet-shaped, spherical, linear, tubular or other shapes, and the dispersing agent comprises boron nitride, metal oxide and ceramic.
Further, the CoMnSi based alloy particles have a size of less than 500 μm, preferably in the size range of 10 μm to 200. Mu.m.
Further, in step b, a mechanical pump is used to pump the vacuum to below 10 Pa, and then a molecular pump is used to pump the vacuum to 1×10 -2 Pa, vacuum or filling inert gases such as argon, nitrogen and the like, and sealing the quartz tube, and preferably filling argon with the pressure of 0.6 atmosphere.
Further, in step d, the quartz tube is annealed at a high temperature of 1170-1300 ℃ to cause melting of the CoMnSi-based alloy particles into a sphere, preferably at 1220 ℃ for 10 min.
Further, in step d, the quartz tube is annealed at a high temperature of 920-1170 ℃ to allow the grains of the CoMnSi-based alloy particles to grow sufficiently to an austenite single crystal, preferably annealed at 1000-1100 ℃ for 1-6 h.
Further, in step d, the quartz tube is taken out from the furnace at 920-1170 ℃, and the temperature of the quartz tube is required to be kept for 10-30 min before taking out to ensure that the temperature of the quartz tube is consistent with the temperature in the furnace, and the temperature of the quartz tube is required to be higher than the temperature of CoMnSi based Jin Mashi phase transition, namely 920 ℃, preferably 950 ℃.
Further, in step e, the CoMnSi base alloy particles may be cleaned by ultrasonic cleaning, centrifugal filtration, etc., and may be dried by using an oven, an electric blower, etc.
Further, in step f, a mechanical pump is used to pump the vacuum to below 10 Pa, and then a molecular pump is used to pump the vacuum to 1×10 -3 And closing the quartz tube after Pa.
The invention discloses the following technical effects:
1. the beneficial effects of the invention are as follows:
according to the manufacturing method of the CoMnSi base alloy spherical single crystal particles, the single crystal particles are prepared by utilizing the strong growth capacity of metal crystal grains at high temperature through the characteristics that metal does not react with a solid dispersing agent and does not diffuse, the spontaneous nucleation process of the Marsh phase transition is inhibited through a rapid quenching process, and the growth of the Marsh single crystal is induced, namely the growth of the CoMnSi base alloy room-temperature single crystal. The size of the metal particles produced is less than 500. Mu.m, preferably the size of the metal single crystal particles is in the range of 10 μm to 200. Mu.m. Compared with the traditional single crystal growth, the method has low cost and high single crystal rate, and can be used for producing CoMnSi-based alloy single crystal particles in large scale. The method is helpful for pushing CoMnSi-based alloy particles to be applied in the directions of magnetostriction, magnetic refrigeration and the like.
Drawings
FIG. 1 is a scanning electron microscope image of CoMnSi particles detected in example 1.
FIG. 2 is an Euler angle distribution diagram and a phase structure analysis diagram of a cross section of CoMnSi particles in detection example 1.
FIG. 3 is a scanning electron microscope image of CoMnSi particles detected in example 2.
FIG. 4 is an Euler angle distribution diagram and a phase structure analysis diagram of a cross section of CoMnSi particles in detection example 2.
Detailed Description
The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments are shown, for the purpose of illustrating the invention, but the scope of the invention is not limited to the specific embodiments shown.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present invention.
Unless otherwise specifically indicated, the various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or may be prepared by existing methods.
Example 1
Preparation of CoMnSi intermetallic compound single crystal particles
a. CoMnSi intermetallic compounds (subscript is atomic percent) are obtained by an arc melting method, and particles with average size of about 10-50 μm are obtained by mechanical crushing as raw materials.
b. Taking 2 g of CoMnSi particles and boron nitride powder with the size of about 1 mu m according to the weight ratio of 1:3, mechanically stirring, uniformly mixing, and filling into a quartz tube.
c. And c, placing the quartz tube obtained in the step b into a tubular annealing furnace, vacuumizing to less than 1Pa, heating to 700 ℃ at a speed of 5 ℃/min through flowing hydrogen, preserving heat for 40min, and cooling to room temperature along with the furnace.
d. Placing the mixed CoMnSi particles/boron nitride powder into a quartz tube, and vacuumizing the quartz tube to 6X 10 -3 Pa, introducing argon to 0.06MPa, and sealing the tube.
e. Placing the quartz tube obtained in the step d into a high-temperature furnace, preserving heat for 10min at 1220 ℃, then rapidly reducing the furnace temperature to 1000 ℃ and preserving heat for 2h, then reducing the temperature to 950 ℃ at a rate of 5 ℃/min and preserving heat for 30min, taking the quartz tube out of the furnace and rapidly breaking the quartz tube in water at room temperature.
f. And d, collecting CoMnSi particles obtained in the step e by using a magnet attraction mode, soaking the CoMnSi particles in absolute ethyl alcohol for multiple times, ultrasonically cleaning until the ethanol liquid is clear, and finally drying by using an oven to obtain clean and dry CoMnSi particles.
g. Placing the CoMnSi particles obtained in the step f into a quartz tube, and vacuumizing to 10 -3 Sealing Pa;
h. and d, putting the quartz tube obtained in the step g into a high-temperature furnace, heating to 800 ℃, preserving heat for 2 hours, and naturally cooling to room temperature to obtain CoMnSi particles. FIG. 1 is a scanning electron micrograph of the obtained CoMnSi intermetallic compound particles, the particle size being 10 μm to 60. Mu.m. FIG. 2 is an Euler angle distribution diagram and a phase structure analysis diagram of grains of a cross section of CoMnSi particles, in which 7 complete particles are shown, 6 of which are single crystal particles.
Example 2
Preparation of CoMnSi intermetallic compound single crystal particles
a. CoMnSi intermetallic compounds (subscript is atomic percent) are obtained by an arc melting method, and particles with average size of about 10-50 μm are obtained by mechanical crushing as raw materials.
b. Taking 2 g of CoMnSi particles and boron nitride powder with the size of about 1 mu m according to the weight ratio of 1:3, mechanically stirring, uniformly mixing, and filling into a quartz tube.
c. And c, placing the quartz tube obtained in the step b into a tubular annealing furnace, vacuumizing to less than 1Pa, heating to 700 ℃ at a speed of 5 ℃/min through flowing hydrogen, preserving heat for 40min, and cooling to room temperature along with the furnace.
d. Placing the mixed CoMnSi particles/boron nitride powder into a quartz tube, and vacuumizing the quartz tube to 6X 10 -3 Pa, introducing argon to 0.06MPa, and sealing the tube.
e. Putting the quartz tube obtained in the step d into a high-temperature furnace, preserving heat for 10min at 1220 ℃, then rapidly reducing the furnace temperature to 1000 ℃ and preserving heat for 2h, then reducing the temperature to 950 ℃ at the rate of 5 ℃/min and preserving heat for 30min, taking the quartz tube out of the furnace and rapidly soaking in water, wherein the quartz tube is not damaged.
f. And d, collecting CoMnSi particles obtained in the step e by using a magnet attraction mode, soaking the CoMnSi particles in absolute ethyl alcohol for multiple times, ultrasonically cleaning until the ethanol liquid is clear, and finally drying by using an oven to obtain clean and dry CoMnSi particles. FIG. 3 is a scanning electron micrograph of the obtained CoMnSi intermetallic compound particles, the particle size being 20 μm to 60. Mu.m. Fig. 4 is an Euler angle distribution and phase structure analysis of grains of a cross section of a CoMnSi grain, in which the selected grain has a striped grain distribution with pronounced twinning characteristics.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. The present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A preparation method of CoMnSi-based alloy spherical single crystal particles is characterized by comprising the following steps of: the method comprises the following steps:
a. preparing CoMnSi-based alloy particles;
b. uniformly mixing a solid dispersing agent and CoMnSi-based alloy particles, placing the mixture in a flowing reducing atmosphere, performing high-temperature annealing to perform deoxidation treatment, and then cooling to room temperature;
c. b, placing the CoMnSi-based alloy particles/solid dispersant mixture obtained in the step b into a quartz tube, and vacuumizing and sealing;
d. c, placing the quartz tube obtained in the step c into a high-temperature furnace, preserving heat for a period of time at 1170-1300 ℃, then rapidly reducing the furnace temperature to 920-1170 ℃ and preserving heat for a long time, then taking the quartz tube out of the furnace at 920-1170 ℃, and rapidly breaking the quartz tube in cooling water;
e. collecting the CoMnSi based alloy particles obtained in the step d by using a magnet attraction mode, and cleaning and drying the CoMnSi based alloy particles;
f. d, putting the CoMnSi-based alloy particles obtained in the step d into a quartz tube, and vacuumizing and sealing;
g. and d, placing the quartz tube obtained in the step f into a high-temperature furnace, heating to 500-900 ℃, preserving heat for a period of time, and naturally cooling to room temperature to obtain CoMnSi-based alloy particles.
2. The method according to claim 1A preparation method of CoMnSi-based alloy spherical single crystal particles is characterized by comprising the following steps of: the chemical formula of the CoMnSi-based alloy is Co 1-x Ni x MnSi，0≤x≤0.1。
3. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step a, the CoMnSi based alloy particles may be obtained by mechanically crushing a CoMnSi based alloy ingot, an electric spark method, a droplet discharge method, commercial purchase, or the like.
4. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in the step b, the solid dispersing agent can be any size smaller than the particle size of the CoMnSi base alloy, the preferable size range is 100 nm-100 μm, the morphology can be sheet-shaped, spherical, linear, tubular or other shapes, and the dispersing agent comprises boron nitride, metal oxide and ceramic.
5. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: the CoMnSi based alloy particles have a size of less than 500 μm, preferably in the size range of 10 μm to 200. Mu.m.
6. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step b, a mechanical pump is used to pump vacuum to below 10 Pa, and then a molecular pump is used to pump vacuum to 1×10 -2 Pa, vacuum or filling inert gases such as argon, nitrogen and the like, and sealing the quartz tube, and preferably filling argon with the pressure of 0.6 atmosphere.
7. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step d, the quartz tube is annealed at a high temperature of 1170-1300 ℃ to cause melting of the CoMnSi-based alloy particles into a spherical shape, preferably at 1220 ℃ for 10 min.
8. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step d, the quartz tube is annealed at a high temperature of 920-1170 ℃ to allow the grains of the CoMnSi-based alloy particles to grow sufficiently to an austenite single crystal, preferably annealed at 1000-1100 ℃ for 1-6 h.
9. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step d, the quartz tube is taken out from the furnace at 920-1170 ℃, and the temperature of the quartz tube needs to be kept for 10-30 min before taking out to ensure that the temperature of the quartz tube is consistent with the temperature in the furnace, and the temperature of the quartz tube needs to be higher than the temperature of CoMnSi based Jin Mashi phase transition, namely 920 ℃, preferably 950 ℃.
10. The method for preparing the CoMnSi base alloy spherical single crystal particles according to claim 1, wherein: in step f, a mechanical pump is used to pump vacuum to below 10 Pa, and then a molecular pump is used to pump vacuum to 1×10 -3 And closing the quartz tube after Pa.
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