CN116972738B - Method for detecting suspended height of MEMS suspended film structure - Google Patents
Method for detecting suspended height of MEMS suspended film structure Download PDFInfo
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- CN116972738B CN116972738B CN202310947122.0A CN202310947122A CN116972738B CN 116972738 B CN116972738 B CN 116972738B CN 202310947122 A CN202310947122 A CN 202310947122A CN 116972738 B CN116972738 B CN 116972738B
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000725 suspension Substances 0.000 claims abstract description 21
- 238000013507 mapping Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 39
- 230000035945 sensitivity Effects 0.000 claims description 12
- 238000009795 derivation Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 206010041662 Splinter Diseases 0.000 abstract 1
- 230000008569 process Effects 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
Abstract
The invention relates to the technical field of microelectronic test analysis, and particularly discloses a detection method of a suspension height of a MEMS film type suspension structure, which comprises the following steps: a thermosensitive unit is arranged on the MEMS suspended film structure; extracting a first current when the voltage is relatively stable and a corresponding first voltage value; obtaining a voltage-current relation curve of the thermosensitive unit under high vacuum, and extracting a second current and a corresponding second voltage value when the voltage is relatively stable; obtaining a first thermal coefficient of the thermal sensitive unit corresponding to the first current and a second thermal coefficient of the thermal sensitive unit corresponding to the second current under the atmospheric pressure; and determining the flying height of the MEMS flying structure according to the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the flying height. The detection method provided by the invention is designed aiming at the traditional method of detecting the suspension height of the device splinter, and is used for improving the damage of the traditional detection method to the device so as to finish the nondestructive detection of the suspension height.
Description
Technical Field
The invention relates to the technical field of microelectronic test analysis, in particular to a method for detecting the suspended height of a suspended film structure of a Micro-electro-mechanical system (MEMS).
Background
The MEMS suspended film structure is affected by heat conduction and convection, so that the MEMS suspended film structure is widely applied to heat conduction type MEMS sensors such as temperature sensors, heat vacuum sensors, heat flow sensors and the like. The suspended height of the suspended film structure is closely related to the performance of the device, and it is generally considered that for a thermal vacuum sensor, reducing the suspended height is beneficial to increasing the upper measurement limit; for the thermal infrared sensor, increasing the suspension height is beneficial to improving the response rate; for a thermal flow sensor, the greater the flying height, the greater the temperature difference and sensitivity. Therefore, the method has important significance for accurately extracting the suspended height of the MEMS suspended film structure.
Analysis of the suspended height in the prior art has been accomplished primarily by slicing the structure and then obtaining a clear cross-sectional view using a scanning electron microscope.
However, the methods selected in the prior art are prone to damage to the device structure.
Disclosure of Invention
The invention aims to overcome the defects and the shortcomings of the prior art, and provides a detection method for the suspension height of an MEMS suspended film structure, which realizes nondestructive detection of the MEMS suspended film structure, and comprises the following steps:
a thermosensitive unit is arranged on the MEMS suspended film structure,
obtaining a voltage-current relation curve of the thermosensitive unit under the atmospheric pressure, and extracting a first current and a corresponding first voltage value when the voltage is relatively stable;
obtaining a voltage-current relation curve of the thermosensitive unit under high vacuum, and extracting a second current and a corresponding second voltage value when the voltage is relatively stable;
obtaining a first thermal coefficient of the thermal sensitive unit corresponding to the first current and a second thermal coefficient of the thermal sensitive unit corresponding to the second current under the atmospheric pressure;
and determining the flying height of the MEMS flying structure according to the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the flying height.
In an alternative embodiment, determining the flying height of the MEMS flying structure based on the first thermal coefficient, the second thermal coefficient, the first voltage value, and the second voltage value mapped to the flying height comprises:
determining the suspended film area corresponding to the MEMS suspended structure;
based on the suspended film area, determining the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the suspended height by combining the Boltzmann constant;
and determining the flying height of the MEMS flying structure based on the mapping relation.
In an alternative embodiment, the temperature sensing unit is implemented as a resistance-based temperature sensing unit;
or alternatively, the first and second heat exchangers may be,
the thermo-sensitive unit is realized as a diode-based thermo-sensitive unit;
or alternatively, the first and second heat exchangers may be,
the thermo-sensitive unit is realized as a triode based thermo-sensitive unit.
In an alternative embodiment, obtaining a voltage-current relationship of the thermal unit at atmospheric pressure and extracting a first current and its corresponding first voltage value when the voltage is relatively stable, comprises:
placing the MEMS suspended film provided with the thermosensitive unit in an atmosphere;
loading different constant working currents to the thermo-sensitive unit，Obtaining the voltage of the thermosensitive unit under the atmospheric pressure-A current relationship curve;
obtaining a first output voltage sensitivity-current relation curve according to the derivation of the voltage-current relation curve of the thermosensitive unit under the atmospheric pressure;
in the sensitivity-current relationship, a first current is determined according to a sensitivity threshold, and a first voltage value corresponding to the first current.
In an alternative embodiment, obtaining a voltage-current relationship of the thermal unit under high vacuum and extracting a second current and its corresponding second voltage value when the voltage is relatively stable, comprises:
placing the MEMS suspended film provided with the thermosensitive unit in a vacuum cavity, wherein the air pressure of the vacuum cavity is less than or equal to 0.01Pa;
loading different constant working currents on the thermosensitive unit to obtain a voltage-current relation curve of the thermosensitive unit under high vacuum;
obtaining a second output voltage sensitivity-current relation curve according to the derivation of the voltage-current relation curve of the thermosensitive unit under high vacuum;
in the second output sensitivity-current relationship, a second current is determined according to the sensitivity threshold, and a second output voltage corresponding to the second current.
In an alternative embodiment, obtaining a thermal coefficient-current relationship curve of the thermal unit under the atmospheric pressure, and extracting a first thermal coefficient corresponding to the first current and a second thermal coefficient corresponding to the second current respectively, including:
placing the MEMS suspended film provided with the thermosensitive unit in temperature changing equipment under the atmospheric pressure;
loading first currents to the thermosensitive units at a plurality of temperatures to obtain output voltages of the thermosensitive units corresponding to the first currents, and generating a first voltage-temperature relation curve of the thermosensitive units under the first currents;
loading second currents to the thermosensitive units at a plurality of temperatures to obtain output voltages of the thermosensitive units corresponding to the second currents, and generating a second voltage-temperature relation curve of the thermosensitive units under the second currents;
the first thermal coefficient is determined based on the slope of the first voltage-temperature relationship and the second thermal coefficient is determined based on the slope of the second voltage-temperature relationship.
In an alternative embodiment, the temperature changing device is realized as a hotplate;
or alternatively, the first and second heat exchangers may be,
the temperature varying device is realized as an oven.
In an alternative embodimenta 1 ,a 2 ,U 1 ,U 2 ) And the suspension heightdThe mapping of (c) can be expressed as:
，
wherein,Kexpressed as the product of the boltzmann constant and the area of the suspended membrane structure.
The application at least comprises the following beneficial effects:
and setting a thermosensitive unit on the suspended film structure, respectively extracting voltage values when the thermosensitive unit is relatively stable by acquiring voltage-current relation curves of the thermosensitive unit under the atmospheric pressure and high vacuum, then extracting thermosensitive coefficients of corresponding currents when the voltage is relatively stable by acquiring thermosensitive coefficient-current relation curves of the thermosensitive unit under the atmospheric pressure, and finally calculating the suspended height of the suspended structure according to the output voltage and the mapping relation between the thermosensitive coefficients and the suspended height. The method for detecting the suspended height of the MEMS suspended film structure can accurately detect the suspended height without damaging the device structure, and realizes nondestructive detection.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
fig. 1 is a flowchart of a method for detecting a flying height according to an exemplary embodiment of the present application.
Fig. 2 is a flowchart of another embodiment of a method for detecting a flying height according to an exemplary embodiment of the present application.
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic flow chart of a method for detecting a suspended height of a MEMS suspended film structure according to an exemplary embodiment of the present application, where the method includes:
and step 101, arranging a thermosensitive unit on the MEMS suspended film structure.
In this embodiment of the present application, the suspended thin film structure of MEMS is a thin film structure that is on the MEMS sensor, has a certain distance from the substrate and is suspended, and the specific implementation manner of the thin film structure and the specific type of the MEMS sensor or the MEMS chip are not limited in this application.
In this embodiment of the present application, the thermosensitive unit is a unit that changes its own physical property according to its own temperature change, and optionally, the thermosensitive unit changes its own resistance according to the temperature change.
Step 102, obtaining a voltage-current relation curve of the thermosensitive unit under the atmospheric pressure, and extracting a first current and a corresponding first voltage value when the voltage is relatively stable.
Step 103, obtaining a voltage-current relation curve of the thermosensitive unit under high vacuum, and extracting a second current and a corresponding second voltage value when the voltage is relatively stable.
In the embodiment of the application, the relationship between the current and the voltage when the voltage is stable is determined by taking the two conditions of normal atmospheric pressure and high vacuum.
Step 104, obtaining a first thermal coefficient corresponding to the first current and a second thermal coefficient corresponding to the second current of the thermal unit under the atmospheric pressure.
In this embodiment of the present application, the thermosensitive unit has different thermal coefficients corresponding to the first current and the second current under the condition of fixed atmospheric pressure, and is represented by the first thermal coefficient and the second thermal coefficient.
Step 105, determining the suspension height of the MEMS suspension structure according to the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the suspension height.
The process is the determination of the suspended height of the MEMS suspended structure. Alternatively, the determination may be made in combination with commonly used electrical coefficients such as boltzmann constants.
In summary, according to the method provided by the embodiment of the present application, the thermosensitive unit is disposed on the suspended film structure, the voltage-current relationship curve of the thermosensitive unit under the atmospheric pressure and the high vacuum is obtained, the voltage values when the thermosensitive unit is relatively stable are respectively extracted, then the thermosensitive coefficient-current relationship curve of the thermosensitive unit under the atmospheric pressure is obtained, the thermosensitive coefficient of the corresponding current when the voltage is relatively stable is extracted, and finally the suspended height of the suspended structure is calculated according to the output voltage and the mapping relation between the thermosensitive coefficient and the suspended height. The method for detecting the suspended height of the MEMS suspended film structure can accurately detect the suspended height without damaging the device structure, and realizes nondestructive detection.
Fig. 2 is a flow chart illustrating another method for detecting a suspended height of a MEMS suspended film structure according to an exemplary embodiment of the present application, where the method includes:
in step 201, a thermo-sensitive unit is disposed on the MEMS suspended membrane structure.
It should be noted that, the thermosensitive unit referred to in the embodiment of the present application is implemented as a resistance-based thermosensitive unit; or, the thermo-sensitive unit is implemented as a diode-based thermo-sensitive unit; or, the thermo-sensitive unit is implemented as a triode-based thermo-sensitive unit. The specific implementation form of the thermosensitive unit is not limited in the present application.
And 202, placing the MEMS suspended film provided with the thermosensitive unit in an atmosphere environment.
Step 203, loading different constant working currents to the thermosensitive unit，Obtaining the voltage of the thermosensitive unit under the atmospheric pressure-Current relationship curve.
Step 204, deriving a first output voltage sensitivity-current relation curve according to the voltage-current relation curve of the thermosensitive unit under the atmospheric pressure.
In step 205, a first current is determined from the sensitivity threshold and a first voltage value corresponding to the first current in a sensitivity-current relationship.
Steps 202 to 205 are the determination of the first current and the first voltage value corresponding to the first current. In this process, sensitivity is used to indicate the extent to which the output voltage varies with the operating current. And as the operating current increases, the sensitivity decreases, in one example, the sensitivity threshold is 0.03%, and when the sensitivity value is less than 0.03%, the recording of the first current and the recording of the first resistance corresponding to the first current is performed.
And 206, placing the MEMS suspended film provided with the thermosensitive unit in a vacuum cavity, wherein the air pressure of the vacuum cavity is less than or equal to 0.01Pa.
Step 207, loading different constant working currents to the thermosensitive unit to obtain a voltage-current relation curve of the thermosensitive unit under high vacuum.
And step 208, deriving a second output voltage sensitivity-current relation curve according to the voltage-current relation curve of the thermosensitive unit under high vacuum.
In step 209, a second current is determined from the sensitivity threshold in a second output sensitivity-current relationship, and a second output voltage corresponding to the second current.
Steps 206 to 209 are the determination process of the second current and the second output voltage corresponding to the second current. The process corresponds to the process shown in steps 202 to 205. In the examples of the present application, the sensitivity threshold was set to be 0.03% as well.
And 210, placing the MEMS suspended film provided with the thermosensitive unit in temperature changing equipment under the atmospheric pressure.
Step 211, loading a first current to the thermo-sensitive units at a plurality of temperatures to obtain output voltages of the corresponding number of thermo-sensitive units under the first current, and generating a first voltage-temperature relationship curve of the thermo-sensitive units under the first current.
Step 212, loading a second current to the thermo-sensitive units at a plurality of temperatures to obtain output voltages of the corresponding number of thermo-sensitive units at the second current, and generating a second voltage-temperature relationship curve of the thermo-sensitive units at the second current.
Step 213, determining a first thermal coefficient based on the slope of the first voltage-temperature relationship and determining a second thermal coefficient based on the slope of the second voltage-temperature relationship.
Steps 210 to 213 are the determination process for the first and second thermal coefficients. Alternatively, the generated curve may be a resistance-temperature relationship. After the first voltage-temperature relation curve and the second voltage-temperature relation curve are generated, the slope of the curve 1 can be determined by a derivation method, and then the first thermal coefficient and the second thermal coefficient are determined based on the slope of the curve.
At step 214, a suspended membrane area corresponding to the MEMS suspended structure is determined.
Step 215, determining a mapping relation between the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the flying height based on the flying film area and combining the Boltzmann constant.
At step 216, the flying height of the MEMS flying structure is determined based on the mapping.
In the embodiment of the application, the suspension height of the MEMS suspension structure may be determined by combining equation 1:
equation 1:，
wherein d is the suspension height, a 1 A is a first thermal coefficient, a 2 Is of a second thermal coefficient, U 1 At a first voltage value, U 2 At the value of the second voltage,Kis the product of the boltzmann constant and the area of the suspended thin film structure.
In summary, according to the method provided by the embodiment of the present application, the thermosensitive unit is disposed on the suspended film structure, the voltage-current relationship curve of the thermosensitive unit under the atmospheric pressure and the high vacuum is obtained, the voltage values when the thermosensitive unit is relatively stable are respectively extracted, then the thermosensitive coefficient-current relationship curve of the thermosensitive unit under the atmospheric pressure is obtained, the thermosensitive coefficient of the corresponding current when the voltage is relatively stable is extracted, and finally the suspended height of the suspended structure is calculated according to the output voltage and the mapping relation between the thermosensitive coefficient and the suspended height. The method for detecting the suspended height of the MEMS suspended film structure can accurately detect the suspended height without damaging the device structure, and realizes nondestructive detection.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (7)
1. A method for detecting the suspended height of a MEMS suspended membrane structure of a microelectromechanical system, the method comprising:
a thermosensitive unit is arranged on the MEMS suspended film structure;
obtaining a voltage-current relation curve of the thermosensitive unit under the atmospheric pressure, and extracting a first current and a corresponding first voltage value when the voltage is relatively stable;
obtaining a voltage-current relation curve of the thermosensitive unit under high vacuum, and extracting a second current and a corresponding second voltage value when the voltage is relatively stable;
obtaining a first thermal coefficient of the thermal unit corresponding to the first current and a second thermal coefficient of the thermal unit corresponding to the second current under the atmospheric pressure;
determining the suspension height of the MEMS suspension film structure according to the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the suspension height;
wherein, determining the suspension height of the MEMS suspension film structure according to the first thermal coefficient, the second thermal coefficient, the first voltage value, the second voltage value, and the mapping relation of the suspension height comprises:
determining a suspended film area corresponding to the MEMS suspended film structure;
determining the mapping relation of the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the flying height by combining Boltzmann constant based on the area of the flying film;
and determining the flying height of the MEMS flying film structure based on the mapping relation.
2. The method for detecting a suspension height according to claim 1, wherein the thermosensitive unit is implemented as a resistance-based thermosensitive unit;
or alternatively, the first and second heat exchangers may be,
the thermal unit is realized as a diode-based thermal unit;
or alternatively, the first and second heat exchangers may be,
the thermal unit is implemented as a triode-based thermal unit.
3. The method according to claim 1, wherein obtaining a voltage-current relationship curve of the thermo-sensitive unit under the atmospheric pressure, and extracting a first current and a corresponding first voltage value when the voltage is relatively stable, comprises:
placing the MEMS suspended film provided with the thermosensitive unit in an atmosphere;
loading different constant working currents on the thermosensitive unit to obtain a voltage-current relation curve of the thermosensitive unit under the atmospheric pressure;
obtaining a first output voltage sensitivity-current relation curve according to the derivation of the voltage-current relation curve of the thermosensitive unit under the atmospheric pressure;
in the sensitivity-current relationship, the first current is determined according to a sensitivity threshold, and a first voltage value corresponding to the first current.
4. The method according to claim 1, wherein obtaining a voltage-current relationship curve of the thermo-sensitive unit under high vacuum, and extracting a second current and a corresponding second voltage value when the voltage is relatively stable, comprises:
placing the MEMS suspended film provided with the thermosensitive unit in a vacuum cavity, wherein the air pressure of the vacuum cavity is less than or equal to 0.01Pa;
loading different constant working currents on the thermosensitive unit to obtain a voltage-current relation curve of the thermosensitive unit under high vacuum;
obtaining a second output voltage sensitivity-current relation curve according to the derivation of the voltage-current relation curve of the thermosensitive unit under high vacuum;
in the second output sensitivity-current relationship, the second current is determined according to a sensitivity threshold, and a second output voltage corresponding to the second current.
5. The method according to claim 1, wherein obtaining a thermal coefficient-current relationship curve of the thermal unit at atmospheric pressure, and extracting a first thermal coefficient corresponding to the first current and a second thermal coefficient corresponding to the second current, respectively, comprises:
placing the MEMS suspended film provided with the thermosensitive unit in temperature changing equipment under the atmospheric pressure;
loading the first current to the thermosensitive units at a plurality of temperatures to obtain output voltages of the thermosensitive units corresponding to the first current, and generating a first voltage-temperature relation curve of the thermosensitive units under the first current;
loading the second current to the thermosensitive units at a plurality of temperatures to obtain output voltages of the thermosensitive units at the second current, which correspond to the second current, and generating a second voltage-temperature relation curve of the thermosensitive units at the second current;
the first thermal coefficient is determined based on a slope of the first voltage-temperature relationship and the second thermal coefficient is determined based on a slope of the second voltage-temperature relationship.
6. The method of claim 5, wherein the temperature changing device is implemented as a hotplate;
or alternatively, the first and second heat exchangers may be,
the temperature changing device is implemented as an oven.
7. The method of claim 1, wherein determining the flying height of the MEMS-suspended thin film structure based on the first thermal coefficient, the second thermal coefficient, the first voltage value, and the second voltage value versus the flying height comprises:
determining the flying height of the MEMS flying film structure according to the mapping relation between the first thermal coefficient, the second thermal coefficient, the first voltage value and the second voltage value and the flying height by combining formula 1
Equation 1:
wherein d is the suspension height, a 1 A is a first thermal coefficient, a 2 Is of a second thermal coefficient, U 1 At a first voltage value, U 2 And K is the product of the Boltzmann constant and the area of the suspended film structure.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH039207A (en) * | 1989-03-17 | 1991-01-17 | Olympus Optical Co Ltd | Cantilever fine displacement sensor |
| JPH06249736A (en) * | 1993-02-23 | 1994-09-09 | Matsushita Electric Works Ltd | Vacuum leakage detecting sensor and sensing method |
| CN102831999A (en) * | 2011-12-17 | 2012-12-19 | 西北工业大学 | Method for processing suspended thermosensitive film resistor |
| TWI664396B (en) * | 2018-01-02 | 2019-07-01 | 國立高雄科技大學 | Thermal Barometric Altimeter |
| CN110849929A (en) * | 2019-11-29 | 2020-02-28 | 无锡物联网创新中心有限公司 | Method for monitoring release state of sensor with suspension structure |
| CN116165070A (en) * | 2023-04-21 | 2023-05-26 | 长鑫存储技术有限公司 | Method and device for detecting Young's modulus of film |
-
2023
- 2023-07-31 CN CN202310947122.0A patent/CN116972738B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH039207A (en) * | 1989-03-17 | 1991-01-17 | Olympus Optical Co Ltd | Cantilever fine displacement sensor |
| JPH06249736A (en) * | 1993-02-23 | 1994-09-09 | Matsushita Electric Works Ltd | Vacuum leakage detecting sensor and sensing method |
| CN102831999A (en) * | 2011-12-17 | 2012-12-19 | 西北工业大学 | Method for processing suspended thermosensitive film resistor |
| TWI664396B (en) * | 2018-01-02 | 2019-07-01 | 國立高雄科技大學 | Thermal Barometric Altimeter |
| CN110849929A (en) * | 2019-11-29 | 2020-02-28 | 无锡物联网创新中心有限公司 | Method for monitoring release state of sensor with suspension structure |
| CN116165070A (en) * | 2023-04-21 | 2023-05-26 | 长鑫存储技术有限公司 | Method and device for detecting Young's modulus of film |
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