CN116956797A - Power integrity simulation method and device and electronic equipment - Google Patents
Power integrity simulation method and device and electronic equipment Download PDFInfo
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Abstract
The disclosure relates to a power supply integrity simulation method, a power supply integrity simulation device and electronic equipment, and relates to the technical field of capacitance models. Comprising the following steps: obtaining a direct-current bias voltage and a temperature value; determining a target model matched with the direct-current bias voltage and the temperature value from a model library, wherein the target model is determined in advance according to a second-class capacitance dynamic model; and adopting a target model to perform power integrity simulation. The embodiment of the disclosure is used for solving the problem of complicated operation of the existing power supply integrity simulation.
Description
Technical Field
The disclosure relates to the technical field of capacitance models, in particular to a power supply integrity simulation method and device and electronic equipment.
Background
Power supply integrity simulation is a bottleneck in current and future System-on-a-Chip designs, which directly affects the performance of the System-on-a-Chip (SoC). At present, when the power integrity simulation is performed, a second-class capacitance dynamic model is mainly applied to simulate a second-class multilayer ceramic capacitor in an electronic system, the second-class capacitance dynamic model is in an encrypted state, and a power integrity simulation tool cannot be directly invoked. When the power supply integrity simulation system is called, the corresponding second-class capacitance dynamic model is determined through the circuit simulation simulator according to the direct-current bias voltage and the temperature value input by a user, and then the second-class capacitance dynamic model can be called by the power supply integrity simulation tool, so that the power supply integrity simulation is carried out, the operation is complicated in the calling process, the difficulty and the time delay are high in the power supply integrity simulation.
Disclosure of Invention
In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a power integrity simulation method, apparatus, and electronic device, which can implement that a power integrity simulation tool can directly call a target model, thereby reducing difficulty of power integrity simulation.
In order to achieve the above object, the technical solution provided by the embodiments of the present disclosure is as follows:
in a first aspect, a power integrity simulation method is provided, including:
obtaining a direct-current bias voltage and a temperature value;
determining a target model matched with the direct-current bias voltage and the temperature value from a model library, wherein the target model is determined in advance according to a second-class capacitance dynamic model;
and adopting a target model to perform power integrity simulation.
As an optional implementation manner of the embodiment of the disclosure, before determining the target model matched with the dc bias voltage and the temperature value from the model library, the method further includes: acquiring a second-class capacitance dynamic model according to a source path input by a user, wherein the source path is a path for storing the second-class capacitance dynamic model; acquiring a direct-current bias voltage range and a temperature value range input by a user; determining at least one model through a circuit simulation simulator according to the direct-current bias voltage range, the temperature value range and the second-class capacitance dynamic model; saving at least one model to a model library; the target model is included in at least one model, the direct current bias voltage range includes direct current bias voltage, and the temperature value range includes temperature value.
As an optional implementation manner of the embodiment of the disclosure, the two-class capacitor dynamic model includes an original model, and determining, by a circuit simulation simulator, at least one model according to a direct current bias voltage range and a temperature value range input by a user and the two-class capacitor dynamic model includes: determining an original model matched with a direct-current bias voltage range and a temperature value range from the second-class capacitance dynamic model; at least one model is determined by a circuit emulation simulator based on the original model.
As an alternative implementation of the disclosed embodiments, determining at least one model based on an original model by a circuit simulation simulator includes: the circuit simulation simulator equivalent the original model to a passive model according to the direct-current bias voltage range and the temperature value range; extracting scattering parameters of the original model, wherein the scattering parameters are used for describing frequency domain characteristics of the original model; at least one model is generated based on the passive model and the scattering parameters.
As an alternative implementation of the embodiment of the present disclosure, after determining at least one model by the circuit simulation simulator based on the original model, the method further includes: determining a direct-current bias voltage and a temperature value of a target model; generating a target file name according to the direct-current bias voltage and the temperature value of the target model; and storing the target file name corresponding to the target model.
As an optional implementation manner of the embodiment of the present disclosure, before storing the object file name corresponding to the object model, the method further includes: acquiring a destination path input by a user; storing the target file name in correspondence with the target model, comprising: and storing the target file name and the target model to the target path correspondingly.
As an optional implementation manner of the embodiment of the present disclosure, before obtaining the second-type capacitance dynamic model according to the first source path, the method further includes: acquiring a second source path input by a user; and under the condition that the second source path does not exist in the local path, determining the first source path with highest similarity with the second source path in the local path.
In a second aspect, there is provided a power integrity simulation apparatus comprising:
the acquisition module is used for acquiring the direct-current bias voltage and the temperature value;
the processing module is used for determining a target model matched with the direct-current bias voltage and the temperature value from a model library, wherein the target model is determined in advance according to the second-class capacitance dynamic model;
and the simulation module is used for carrying out power integrity simulation by adopting the target model.
As an optional implementation manner of the embodiment of the disclosure, the processing module is further configured to obtain a second-class capacitance dynamic model according to a source path input by a user, where the source path is a path for storing the second-class capacitance dynamic model; acquiring a direct-current bias voltage range and a temperature value range input by a user; determining at least one model through a circuit simulation simulator according to the direct-current bias voltage range, the temperature value range and the second-class capacitance dynamic model; saving at least one model to a model library;
the target model is included in at least one model, the direct current bias voltage range includes direct current bias voltage, and the temperature value range includes temperature value.
As an alternative implementation of the disclosed embodiments, the two-type capacitive dynamic model includes an original model,
the processing module is specifically used for: determining an original model matched with a direct-current bias voltage range and a temperature value range from the second-class capacitance dynamic model; at least one model is determined by a circuit emulation simulator based on the original model.
As an optional implementation manner of the embodiment of the disclosure, the processing module is specifically configured to enable the circuit simulation simulator to equivalent an original model to a passive model according to a dc bias voltage range and a temperature value range; extracting scattering parameters of the original model, wherein the scattering parameters are used for describing frequency domain characteristics of the original model; at least one model is generated based on the passive model and the scattering parameters.
As an optional implementation manner of the embodiment of the disclosure, the processing module is further configured to determine a dc bias voltage and a temperature value of the target model; generating a target file name according to the direct-current bias voltage and the temperature value of the target model; and storing the target file name corresponding to the target model.
As an optional implementation manner of the embodiment of the disclosure, the processing module is further configured to obtain a destination path input by a user; and the processing module is specifically used for storing the target file name and the target model to the target path correspondingly.
As an optional implementation manner of the embodiment of the disclosure, the obtaining module is further configured to obtain a second source path input by a user; and under the condition that the second source path does not exist in the local path, determining the first source path with highest similarity with the second source path in the local path.
In a third aspect, there is provided an electronic device comprising: a processor, a memory and a computer program stored on the memory and executable on the processor, the computer program implementing the power integrity simulation method according to the first aspect or any one of its alternative embodiments when executed by the processor.
In a fourth aspect, there is provided a computer-readable storage medium comprising: the computer readable storage medium has stored thereon a computer program which, when executed by a processor, implements the power integrity simulation method according to the first aspect or any optional implementation thereof.
In a fifth aspect, there is provided a vehicle comprising: the power integrity simulation apparatus as claimed in the second aspect or any optional implementation thereof, or the electronic device as claimed in the third aspect.
In a sixth aspect, a computer program product is provided, comprising: the computer program product, when run on a computer, causes the computer to implement the power supply integrity simulation method as described in the first aspect or any one of its alternative embodiments.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
according to the power supply integrity simulation method provided by the embodiment of the disclosure, the direct-current bias voltage and the temperature value are firstly obtained, and then the matched target model is determined from the model library according to the direct-current bias voltage and the temperature value, wherein the target model is determined in advance according to the second-class dynamic capacitance model. Furthermore, the power supply integrity simulation is carried out by adopting the target model, so that the matched target model can be directly determined through the direct current bias voltage and the temperature value, and the target model is in a non-encryption state and can be directly called by power supply integrity simulation software, the process of repeatedly using a circuit simulation simulator in the simulation process is reduced, the operation is simple, the difficulty of power supply integrity simulation is reduced, and the efficiency is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic diagram of a power integrity simulation method according to an embodiment of the disclosure;
FIG. 2 is a flowchart illustrating a power integrity simulation method according to an embodiment of the present disclosure;
FIG. 3 is a second flowchart of a power integrity simulation method according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a user interface provided by an embodiment of the present disclosure;
FIG. 5 is a block diagram of a power integrity simulation apparatus according to an embodiment of the present disclosure;
fig. 6 is a block diagram of an electronic device according to an embodiment of the disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the technical terms used in the description of the embodiments or the prior art will be briefly described below:
in the power integrity simulation, a project needs to simulate a power transmission network (Power Distribution Network, PDN) of a power supply in the wiring process, software simulates a physical path for conveying power supply power from the power supply to a load, current flows from a power supply end to a load end through the PDN, then flows back from the load end to the power supply end through the PDN, and if the power supply is too thin or GND is insufficient, the PDN simulation shows a result. If PDN simulation is not passed, a board is hurried, and serious problems of no start-up, dead halt or power supply burnout are caused. Therefore, the cost caused by design errors is avoided, and the stability of the electronic system is improved.
In order to solve the above problems, an embodiment of the present disclosure provides a power integrity simulation method, a device, and an electronic device. The method comprises the steps of firstly obtaining direct current bias voltage and temperature values, and then determining a matched target model from a model library according to the direct current bias voltage and temperature values, wherein the target model is determined in advance according to a second-class dynamic capacitance model. Furthermore, the power supply integrity simulation is carried out by adopting the target model, so that the matched target model can be directly determined through the direct current bias voltage and the temperature value, and the target model is in a non-encryption state and can be directly called by power supply integrity simulation software, the process of repeatedly using a circuit simulation simulator in the simulation process is reduced, the operation is simple, the difficulty of power supply integrity simulation is reduced, and the efficiency is improved.
As shown in fig. 1, an architecture diagram of a power integrity simulation method provided by an embodiment of the present disclosure is shown, where the architecture diagram includes a model library 101, where the model library 101 is composed of two types of high-precision passive models, where the two types of high-precision passive models are stored corresponding to dc bias voltages and temperature values, and the two types of high-precision passive models are in an unencrypted state and have no current source, and are determined in advance according to two types of capacitive dynamic models in an encrypted state and having a current source. The method comprises the steps of firstly obtaining direct-current bias voltage and temperature values, then determining a target model matched with the direct-current bias voltage and temperature values from a model library 101 based on the corresponding relation between a second-class high-precision passive model and the direct-current bias voltage and temperature values according to the direct-current bias voltage and temperature values, and finally carrying out power integrity simulation by adopting the target model. Because the target model is in a non-encryption state, the target model can be directly called through a power integrity simulation tool when the power integrity simulation is carried out, so that the complicated flow in the simulation process is reduced; in addition, the target model has no current source, so that the simulation precision is improved.
The power integrity simulation method provided by the embodiment of the disclosure can be realized through computer equipment, wherein the computer equipment comprises, but is not limited to, a server, a personal computer, a notebook computer, a tablet computer, a smart phone, vehicle-mounted equipment and the like. The computer device includes a user device and a network device. The user equipment comprises, but is not limited to, a computer, a smart phone, a tablet computer and the like; network devices include, but are not limited to, a single network server, a server group of multiple network servers, or a cloud of large numbers of computers or network servers in a cloud computing, where cloud computing is a type of distributed computing, a super virtual computer consisting of a collection of loosely coupled computers. The computer device may operate alone to implement the present disclosure, or may access a network and implement the present disclosure through interaction with other computer devices in the network. Among them, the network in which the computer device is located includes, but is not limited to, the internet, a wide area network, a metropolitan area network, a local area network, a virtual private (Virtual Private Network, VPN) network, and the like.
It should be noted that, the protection scope of the power integrity simulation method according to the embodiments of the present disclosure is not limited to the execution sequence of the steps listed in the embodiments, and all the schemes implemented by adding or removing steps and replacing steps according to the prior art according to the principles of the present disclosure are included in the protection scope of the present disclosure.
As shown in fig. 2, fig. 2 is a flowchart one of a power integrity simulation method according to an embodiment of the disclosure, where the method includes:
s201, obtaining a direct current bias voltage and a temperature value.
S202, determining a target model matched with the direct-current bias voltage and the temperature value from a model library.
The target model is determined in advance according to the second-class capacitance dynamic model and then stored in a model library. The target model is a non-encrypted model, which is also called a quasi-dynamic model of a second capacitor or a high-precision passive model of the second capacitor.
It should be noted that, the two-class capacitor dynamic model is an encrypted model, and the two-class capacitor dynamic model includes a current source, so that mainstream power integrity simulation software cannot be directly invoked, and meanwhile, the accuracy of power integrity simulation is affected due to the included current source.
The model library comprises two types of high-precision passive models in an unencrypted state. Each direct current bias voltage and temperature value corresponds to one type of high-precision passive model, for example, the direct current bias voltage is 5.0V, and the temperature value is 70 ℃ corresponds to the type of high-precision passive model A; the direct current bias voltage is 5.0V and the temperature value is-40 ℃ corresponding to the second class of high-precision passive models B.
Fig. 3 is a flowchart of a power integrity simulation method according to an embodiment of the disclosure. Before executing S202, the following steps S2021 to 2024 are included, thereby creating a model library.
S2021, acquiring a second-class capacitance dynamic model according to the first source path.
The first source path is a path for storing the second-class capacitance dynamic model, and indicates storage bits of the second-class capacitance dynamic model in an encryption state.
In some embodiments, a second source path of user input is obtained, the second source path is compared with all paths in the local path, and in the case that the second source path of user input matches the first source path, it is determined to obtain a second type dynamic model from the first source path. And in the case that the second source path input by the user does not match the first source path, a prompt message may be generated to prompt the user that the second source path input by the user has an error.
Whether the second source path exists in the local path or not can be determined by calculating the similarity between the second source path and all paths in the local path, and it can be understood that all paths in the local path and the second source path input by the user are composed of characters, and the similarity is calculated whether each character of all paths in the local path is identical to each character in the second source path or not, including identical positions and identical elements. For example, the second source path input by the User is "class_ii_mlcc_dynamic_model", the similarity to all paths in the local path is obtained by calculation, the path with the highest similarity is determined to be the first source path, and the first source path is "User/class_ii_mlcc_dynamic_model", so that the first source path expected by searching according to the second source path input by the User is realized, similarity calculation is performed in the process, error correction can be performed on the input of the User, and the use experience of the User is improved.
S2022, acquiring a direct-current bias voltage range and a temperature value range input by a user.
In some embodiments, when the direct-current bias voltage range and the temperature value range input by the user are obtained, setting the voltage step length corresponding to the direct-current bias voltage range and the standard temperature, thereby meeting the element requirement of the automobile electronic system when the power integrity simulation is performed. The voltage step length and the standard temperature can be set according to the input of a user, and the default setting can be performed in advance according to the actual requirement.
For example, when the dc bias voltage range is 0 to 5V, the user input voltage step is 0.1V, and the voltage step is set to 0.1V; and the temperature value range is-40-85 ℃, the user inputs the standard temperature to 25 ℃, the minimum temperature value is-40 ℃, the maximum temperature value is 85 ℃, and the standard temperature is set to 25 ℃, so that 50 direct current bias voltages and 3 temperature values can be determined.
In addition, a source path, a destination path and a simulation tool path which are input by a user are acquired. The source path is used for indicating a path for storing the second-class capacitance dynamic model; the destination path is used for indicating a path for storing the at least one model; the emulator path is used to indicate a path of the stored power integrity emulation tool. The method and the device establish the user interface based on the multiple parameters, so that the user experience is improved, and a non-technical person can conveniently determine a required destination model through the user interface.
As shown in fig. 4, fig. 4 is a schematic diagram of a user interface provided by an embodiment of the disclosure, where the user interface includes a control: the control direct current bias voltage also comprises a sub-control minimum direct current bias voltage, a sub-control maximum direct current bias voltage and a voltage step size; the control temperature values also include a minimum temperature value, a standard temperature value, and a maximum temperature value.
The user interface can receive various parameters input by a user, and the various parameters are visualized at the user side, so that the user experience is improved.
S2023, determining at least one model through a circuit simulation simulator according to the direct-current bias voltage range and the temperature value range input by a user and the two-type capacitance dynamic model.
It will be appreciated that the source path stores two types of dynamic models for all dc bias ranges and temperature ranges, while the user-entered dc bias voltage ranges and temperature value ranges are smaller. The models corresponding to the direct current bias voltage range and the temperature value range input by the user are original models, the number of the original models is a plurality of, and the two types of dynamic models comprise the original models.
The source path stores M two types of dynamic models, N number of original models corresponding to the direct current bias voltage range and the temperature value range input by the user are N, N is less than or equal to M, and M and N are positive integers. Along the above example, according to the direct current bias voltage range and the temperature value range input by the user, 50 direct current bias voltages and 3 temperature values are determined, so n=150, and corresponding 150 original models can be obtained from M two-class dynamic models.
The corresponding original model is determined through the direct-current bias voltage range and the temperature value range input by the user, and the second-class capacitance dynamic model is screened, so that unnecessary parts in an automobile safety test scene are removed, and the subsequent calling through a power integrity simulation tool is faster and more convenient.
In some embodiments, at least one model is derived by a circuit simulation simulator based on the original model. The at least one model is a non-encryption state, current-source-free, two-class high-precision passive model, and the at least one model comprises a target model.
Among other things, circuit simulation simulators, such as the commercial universal circuit simulator (Hspice), can provide a number of important circuit simulation and design results for integrated circuit performance. The circuit can be accurately simulated, analyzed and optimized in the microwave frequency range from direct current to higher than 100GHz by adopting the circuit simulation simulator. In practice, circuit simulation simulators can provide critical circuit simulation and design schemes. Note that the present disclosure does not specifically limit the circuit simulation simulator.
At least one model is a non-encryption state model without current source corresponding to the direct current bias voltage range and the temperature value range, and at least one model comprises a target model.
In deriving at least one model based on an original model by a circuit simulation simulator, embodiments of the present disclosure provide for a implementation: and the circuit simulation simulator equivalent an original model corresponding to each direct current bias voltage and temperature value into a passive model according to the direct current bias voltage range and the temperature value range. It should be noted that, in the case of fixed dc bias voltage and fixed temperature value, the corresponding original model may be equivalent to a passive model, that is, the model does not include a current source, so that the simulation accuracy is not affected when the power integrity is simulated.
For example, when the dc bias voltage is 5.0V and the temperature value is 25 ℃, the corresponding original model C can be equivalent to the passive model D, thereby obtaining a capacitance model that does not include a current source.
Further, a circuit simulation simulator is used for extracting scattering parameters of an original model, the scattering parameters are used for describing frequency domain characteristics of the original model, and then at least one model can be generated according to the scattering parameters and the passive model, namely, two non-encrypted non-current source type high-precision passive models corresponding to different direct current bias voltages and temperature values are generated, wherein the two non-encrypted non-current source type high-precision passive models comprise target models corresponding to the direct current bias voltages and the temperature values.
It should be noted that, the scattering parameter is a model for describing the capacitance, and can embody the input-output characteristic of the capacitance without describing the specific structure of the device capacitance, and has very high reducibility.
The scattering parameters of the original model are obtained, for example, by a LIN simulation function in Hspice, which is used to extract noise and linear transmission parameters of the generic multiport network.
According to the embodiment, based on the two-class capacitance dynamic model provided by the main current capacitance provider, the two-class capacitance dynamic model is converted into the two-class high-precision passive model which is in an unencrypted state and has no current source through the circuit simulation simulator, so that the two-class high-precision passive model is used for carrying out power integrity simulation, and the precision of the power integrity simulation is ensured by the generated two-class high-precision passive model.
S2024, saving at least one model to a model library.
In some embodiments, after generating at least one model, determining a dc bias voltage and a temperature value for each model in the at least one model, then generating a file name for each model based on the dc bias voltage and the temperature value for each model, and then obtaining a destination path input by a user, wherein the destination path is used for indicating a path for storing the at least one model; further, a file name is stored corresponding to each model.
Taking the target Model1 included in at least one Model as an example, after at least one Model is obtained according to a direct current bias voltage range and a temperature value range input by a user and the two-type dynamic Model, determining the direct current bias voltage and the temperature value of the target Model1, wherein the direct current bias voltage is 4.8V, the temperature value is 70.0 ℃, generating a target file name of DC_4.8_TEMP_70.0, acquiring a target path input by the user, and storing the target file name and the target Model1 in a Model library of the target path correspondingly, so that a subsequent user can conveniently find the target Model1 by using the direct current bias voltage and the temperature value.
S203, performing power integrity simulation by adopting a target model.
According to the embodiment of the disclosure, the power integrity simulation tool PowerSi directly calls the target model to perform power integrity simulation.
The target model is in a non-encryption state and can be directly called by power integrity simulation software, so that the process of repeatedly using the circuit simulation simulator in the simulation process is reduced, the operation is simple, the difficulty of power integrity simulation is reduced, and the efficiency is improved.
In summary, the embodiment of the disclosure provides a power integrity simulation method, a device and an electronic device. The method comprises the steps of firstly obtaining direct current bias voltage and temperature values, and then determining a matched target model from a model library according to the direct current bias voltage and temperature values, wherein the target model is determined in advance according to a second-class dynamic capacitance model. Furthermore, the power supply integrity simulation is carried out by adopting the target model, so that the matched target model can be directly determined through the direct current bias voltage and the temperature value, and the target model is in a non-encryption state and can be directly called by power supply integrity simulation software, the process of repeatedly using a circuit simulation simulator in the simulation process is reduced, the operation is simple, the difficulty of power supply integrity simulation is reduced, and the efficiency is improved.
As shown in fig. 5, the structure diagram of a power integrity simulation apparatus according to the embodiment of the disclosure in fig. 5 includes:
the acquisition module 501 is configured to acquire a dc bias voltage and a temperature value;
the processing module 502 is configured to determine a target model that matches the dc bias voltage and the temperature value from a model library, where the target model is determined in advance according to a second-class capacitance dynamic model;
and the simulation module 503 is used for performing power integrity simulation by adopting the target model.
As an optional implementation manner of the embodiment of the present disclosure, the processing module 502 is further configured to obtain a second-class capacitance dynamic model according to a source path input by a user, where the source path is a path for storing the second-class capacitance dynamic model; acquiring a direct-current bias voltage range and a temperature value range input by a user; determining at least one model through a circuit simulation simulator according to the direct-current bias voltage range, the temperature value range and the second-class capacitance dynamic model; saving at least one model to a model library;
the target model is included in at least one model, the direct current bias voltage range includes direct current bias voltage, and the temperature value range includes temperature value.
As an alternative implementation of the disclosed embodiments, the two-type capacitive dynamic model includes an original model,
the processing module 502 is specifically configured to: determining an original model matched with a direct-current bias voltage range and a temperature value range from the second-class capacitance dynamic model; at least one model is determined by a circuit emulation simulator based on the original model.
As an optional implementation manner of the disclosed embodiment, the processing module 502 is specifically configured to, according to the dc bias voltage range and the temperature value range, equivalent the original model to a passive model by using the circuit simulation simulator; extracting scattering parameters of the original model, wherein the scattering parameters are used for describing frequency domain characteristics of the original model; at least one model is generated based on the passive model and the scattering parameters.
As an optional implementation manner of the embodiment of the disclosure, the processing module 502 is further configured to determine a dc bias voltage and a temperature value of the target model; generating a target file name according to the direct-current bias voltage and the temperature value of the target model; and storing the target file name corresponding to the target model.
As an optional implementation manner of the embodiment of the present disclosure, the processing module 502 is further configured to obtain a destination path input by a user; and the processing module is specifically used for storing the target file name and the target model to the target path correspondingly.
As an optional implementation manner of the embodiment of the present disclosure, the obtaining module 501 is further configured to obtain a second source path input by a user; and under the condition that the second source path does not exist in the local path, determining the first source path with highest similarity with the second source path in the local path.
In summary, in the power integrity simulation device provided by the embodiment of the disclosure, the acquisition module acquires the dc bias voltage and the temperature value, and then determines the matched target model from the model library according to the dc bias voltage and the temperature value through the processing module, wherein the target model is determined in advance according to the second-class dynamic capacitance model. Furthermore, the simulation module adopts the target model to perform power integrity simulation, so that the matched target model can be directly determined through the direct-current bias voltage and the temperature value, and the target model is in a non-encryption state and can be directly called by power integrity simulation software, the process of repeatedly using the circuit simulation simulator in the simulation process is reduced, the operation is simple, the difficulty of power integrity simulation is reduced, and the efficiency is improved.
As shown in fig. 6, fig. 6 is a structural diagram of an electronic device according to an embodiment of the present disclosure, the electronic device includes: a processor, a memory and a computer program stored on the memory and executable on the processor, which when executed by the processor, implements the respective processes of the power integrity simulation method in the method embodiments described above. And the same technical effects can be achieved, and in order to avoid repetition, the description is omitted here.
The embodiment of the disclosure provides a computer readable storage medium, which is characterized in that the computer readable storage medium stores a computer program, and when the computer program is executed by a processor, the computer program realizes each process of the power integrity simulation method in the embodiment of the method, and can achieve the same technical effect, so that repetition is avoided, and no description is repeated here.
The computer readable storage medium may be a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, an optical disk, or the like.
Embodiments of the present disclosure provide a vehicle including: such as a power integrity simulation apparatus as described above, or an electronic device as described above. The vehicle is used for executing the power integrity simulation method provided by any embodiment of the disclosure, and can achieve the same technical effects, and in order to avoid repetition, the description is omitted here.
The embodiments of the present disclosure provide a computer program product, where the computer program product stores a computer program, and when the computer program is executed by a processor, the computer program realizes each process of the power integrity simulation method in the foregoing method embodiment, and the same technical effects can be achieved, so that repetition is avoided, and details are not repeated here.
It will be appreciated by those skilled in the art that embodiments of the present disclosure may be provided as a method, system, or computer program product. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied therein.
In this disclosure, the processor may be a central processing unit (Central Processing Unit, CPU), but may also be other general purpose processors, digital signal processors (Digital Signal Processor, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), off-the-shelf programmable gate arrays (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
In the present disclosure, memory may include volatile memory, random Access Memory (RAM), and/or nonvolatile memory, such as Read Only Memory (ROM) or flash RAM, in a computer readable medium. Memory is an example of a computer-readable medium.
In the present disclosure, computer readable media include both permanent and non-permanent, removable and non-removable storage media. Storage media may embody any method or technology for storage of information, which may be computer readable instructions, data structures, program modules, or other data. Examples of storage media for a computer include, but are not limited to, phase change memory (PRAM), static Random Access Memory (SRAM), dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), digital Versatile Disks (DVD) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium which can be used to store information that can be accessed by a computing device. Computer-readable media, as defined herein, does not include transitory computer-readable media (transmission media), such as modulated data signals and carrier waves.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The above is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A power integrity simulation method, comprising:
obtaining a direct-current bias voltage and a temperature value;
determining a target model matched with the direct-current bias voltage and the temperature value from a model library, wherein the target model is determined in advance according to a second-class capacitance dynamic model;
and adopting the target model to perform power integrity simulation.
2. The method of claim 1, wherein prior to determining a target model from a model library that matches the dc bias voltage and the temperature value, further comprising:
acquiring the second-class capacitance dynamic model according to a first source path, wherein the first source path is a path for storing the second-class capacitance dynamic model;
acquiring a direct-current bias voltage range and a temperature value range input by a user;
determining at least one model through a circuit simulation simulator according to the direct-current bias voltage range, the temperature value range and the second-class capacitance dynamic model;
saving the at least one model to the model library;
wherein the at least one model comprises the target model, the direct current bias voltage is included in the direct current bias voltage range, and the temperature value is included in the temperature value range.
3. The method according to claim 2, wherein the two-class capacitive dynamic model comprises an original model;
the determining, by the circuit simulation simulator, the at least one model according to the direct current bias voltage range and the temperature value range input by the user and the second-class capacitance dynamic model includes:
determining the original model matched with the direct-current bias voltage range and the temperature value range from the second-class capacitance dynamic model;
the at least one model is determined by the circuit simulation simulator based on the original model.
4. A method according to claim 3, wherein said determining said at least one model by said circuit simulation simulator based on said original model comprises:
the circuit simulation simulator equivalents the original model into a passive model according to the direct-current bias voltage range and the temperature value range;
extracting scattering parameters of the original model, wherein the scattering parameters are used for describing frequency domain characteristics of the original model;
the at least one model is generated based on the passive model and the scattering parameters.
5. The method of claim 3, wherein after determining the at least one model by the circuit simulation simulator based on the original model, further comprising:
determining a direct-current bias voltage and a temperature value of a target model;
generating a target file name according to the direct-current bias voltage and the temperature value of the target model;
and storing the target file name and the target model correspondingly.
6. The method of claim 5, wherein before storing the object file name in correspondence with the object model, further comprising:
acquiring a destination path input by a user;
the storing the target file name corresponding to the target model includes:
and storing the target file name and the target model to the target path correspondingly.
7. The method of claim 2, wherein prior to obtaining the two-class capacitive dynamic model according to the first source path, further comprising:
acquiring a second source path input by a user;
and under the condition that the second source path does not exist in the local path, determining the first source path with the highest similarity with the second source path in the local path.
8. A power integrity simulation apparatus, comprising:
the acquisition module is used for acquiring the direct-current bias voltage and the temperature value;
the processing module is used for determining a target model matched with the direct-current bias voltage and the temperature value from a model library, wherein the target model is determined in advance according to a second-class capacitance dynamic model;
and the simulation module is used for carrying out power integrity simulation by adopting the target model.
9. An electronic device, comprising: a processor, a memory and a computer program stored on the memory and executable on the processor, which when executed by the processor implements the power integrity simulation method of any one of claims 1 to 7.
10. A computer-readable storage medium, comprising: the computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the power integrity simulation method of any of claims 1 to 7.
11. A vehicle, characterized by comprising:
the power integrity simulation apparatus of claim 8 or the electronic device of claim 9.
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