CN116949554B - Production method and production system of Czochralski silicon - Google Patents

Production method and production system of Czochralski silicon Download PDF

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Publication number
CN116949554B
CN116949554B CN202311132727.0A CN202311132727A CN116949554B CN 116949554 B CN116949554 B CN 116949554B CN 202311132727 A CN202311132727 A CN 202311132727A CN 116949554 B CN116949554 B CN 116949554B
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box
rod
horizontal
channel
fixedly connected
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CN116949554A (en
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高贻刚
牛文富
汪沛渊
汪高峰
李一得
何曙光
王鹏
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Ordos Zhongchengyu Energy Co ltd
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Ordos Zhongchengyu Energy Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a production method and a production system of Czochralski silicon, wherein the production method comprises the following steps: step S1: preparing a monocrystalline silicon rod, wherein raw materials for preparing monocrystalline silicon are automatically added through a sieving type feeding device in the preparation process of the monocrystalline silicon rod; step S2: the single crystal silicon rod is conveyed through the first box body by the first conveying device, and is cooled by the cooling device in the first box body; step S3: the monocrystalline silicon rod enters the second box body after passing through the first conveying device, and is polished by a monocrystalline silicon rod polishing mechanism in the second box body; according to the invention, the quality of raw materials added into the single crystal furnace is ensured by filtering impurities from the raw materials and mixing the raw materials, and the quality of produced single crystal silicon is ensured.

Description

Production method and production system of Czochralski silicon
Technical Field
The invention relates to the technical field of monocrystalline silicon production, in particular to a production method and a production system of Czochralski monocrystalline silicon.
Background
Silicon wafers used as substrates for semiconductor integrated circuits are mainly produced by slicing single crystal silicon rods pulled by the Czochralski method. The main steps of drawing the silicon rod in the single crystal furnace comprise charging, evacuating, melting, stabilizing, seeding, shouldering, constant diameter and ending links. The charging step is to charge silicon material (including dopant) into a single crystal quartz crucible, melt the silicon material by a heating system in a single crystal furnace, then reduce the power of a heater to stabilize the melt at a proper temperature, and then start crystal growth.
In the existing production process of Czochralski silicon, raw materials for producing and preparing the monocrystalline silicon are generally directly added into a monocrystalline furnace, for example, CN104372406A, which is a production method of solar-grade Czochralski silicon, the raw materials for preparing the monocrystalline silicon are not screened to remove impurities, and the quality of the prepared silicon wafer is easily influenced by impurities in the raw materials for preparing the monocrystalline silicon.
Disclosure of Invention
The invention provides a production method and a production system of Czochralski silicon, which are used for solving the technical problems proposed by the background technology.
In order to solve the technical problems, the invention discloses a production method of Czochralski silicon, which comprises the following steps:
step S1: preparing a monocrystalline silicon rod, wherein raw materials for preparing monocrystalline silicon are automatically added through a sieving type feeding device in the preparation process of the monocrystalline silicon rod;
step S2: the single crystal silicon rod is conveyed through the first box body by the first conveying device, and is cooled by the cooling device in the first box body;
step S3: the monocrystalline silicon rod enters the second box body after passing through the first conveying device, and is polished by a monocrystalline silicon rod polishing mechanism in the second box body;
the screening type feeding device comprises: the upper box body and the lower seat body are detachably connected with the lower end of the lower seat body, a plurality of cavity structures are arranged in the upper box body at intervals in the front-back direction, each cavity structure comprises two groups of bilaterally symmetrical cavity groups, each cavity group comprises a first cavity and a second cavity which are arranged at intervals in the left-right direction, the lower end of the first cavity is provided with a first discharging pipe, the lower end of the second cavity is provided with a second discharging pipe, a mixing cavity is arranged in the lower seat body, and the mixing cavity is connected with a stirring device; the lower seat body is internally provided with a group of channel groups corresponding to each group of cavity groups, each channel group comprises a first channel and a second channel, the first cavity is communicated with the mixing cavity through the first channel, and the second cavity is communicated with the mixing cavity through the second channel; the channel sets are connected to the screen assemblies.
Preferably, two sets of side-to-side symmetric screen assemblies are connected to two sets of side-to-side adjacent channels, respectively, the left side screen assembly comprising:
the first horizontal channel is communicated with the left side wall of the lower seat body, the first horizontal channel is positioned at the left lower part of the first channel, the fixed end of the horizontal electric telescopic rod is fixedly connected to the left outer wall of the lower seat body, and the telescopic end of the horizontal electric telescopic rod is fixedly connected with an auxiliary frame after penetrating through the first horizontal channel;
the second horizontal channel is communicated with the left side and the right side of the second channel;
auxiliary frame, auxiliary frame includes: the device comprises a horizontal plate I, a horizontal rod I, a vertical rod I and a horizontal plate II, wherein the horizontal plate I is in sliding connection with the horizontal channel I along the left-right direction, a groove I is formed in the right part of the upper end of the horizontal plate I, a plurality of filter holes I which are vertically penetrated are formed in the part of the horizontal plate I, the right side of the horizontal plate I is fixedly connected with the horizontal rod I, the upper end of the right side of the horizontal rod I is fixedly connected with the vertical rod I, the upper end of the vertical rod I is fixedly connected with the horizontal plate II, the horizontal plate II is in sliding connection in the horizontal channel II along the left-right direction, a groove II is formed in the right side of the upper end of the horizontal plate II, impurity collecting boxes are respectively arranged in the groove II and the groove I, and a plurality of filter holes II which are vertically penetrated are formed in the part of the horizontal plate II, which is positioned on the left side of the groove II; the horizontal rod I is provided with a plurality of material through holes which are communicated up and down, and the cross section area of the horizontal rod I is smaller than that of the second channel;
The first elastic scraping plate and the second elastic scraping plate are embedded in the left side of the first channel, the first elastic scraping plate is in contact with the upper end of the horizontal plate, the second elastic scraping plate is embedded in the left side of the second channel, and the second elastic scraping plate is in contact with the upper end of the horizontal plate.
Preferably, the second groove and the first groove are internally provided with weight sensors, the weight sensors are used for weighing the total weight of the impurity collecting box and impurities in the impurity collecting box, the first discharge pipe is provided with a first electric valve, and the second discharge pipe is provided with a second electric valve; the step S1 comprises the following steps:
step S11: adding raw materials for preparing monocrystalline silicon into the first cavity or the second cavity, and then connecting the lower end of the upper box body to the upper end of the lower seat body;
step S12: preparing a monocrystalline silicon rod through a monocrystalline furnace; in the process of preparing the monocrystalline silicon rod, the first electric valve and the second electric valve are controlled to work, and the blanking amount of raw materials for preparing the monocrystalline silicon is determined by combining a weight sensor.
The invention also discloses a production system of the Czochralski monocrystalline silicon, which is applied to a production method of the Czochralski monocrystalline silicon, and comprises the following steps:
the first support is fixedly connected with the first support, the upper end of the first support is fixedly connected with the single crystal furnace, a second support is fixedly arranged on one side of the first support, which is positioned on the single crystal furnace, the second support is fixedly connected with the single crystal furnace, the upper end of the first support is fixedly connected with a third support, which is positioned on the other side of the single crystal furnace, and the upper end of the third support is fixedly connected with a screening type feeding device;
The first conveying device is arranged on the first box body, the cooling device is connected in the first box body, the output side of the first conveying device is fixedly connected with the input side of the second box body, the input side of the second box body is provided with a first inlet, the output side of the second box body is provided with a first outlet, the input side of the second conveying device is fixedly connected with the output side of the second box body, the second box body is internally connected with the monocrystalline silicon rod polishing mechanism, the third box body is arranged on the second conveying device, the appearance detection device is connected in the third box body, and the lower ends of the first box body and the third box body are all provided with openings.
Preferably, the first conveying device and the second conveying device each include: the first conveying assembly is connected between the two groups of side plates, the first box body is connected to the upper part of the side plate of the first conveying device, the third box body is connected to the upper part of the side plate of the second conveying device, the front side of the second box body is fixedly connected with the rear side of the bottom plate II of the first conveying device, and the rear side of the second box body is fixedly connected with the front side of the bottom plate II of the second conveying device;
The first conveying assembly is a belt conveying assembly.
Preferably, also set up belt conveying assembly in the second box, belt conveying assembly's the direction of delivery in the second box is fore-and-aft direction, and monocrystalline silicon stick grinding machanism includes:
the fixed box, the electronic slide rail of direction about second box upper end inner wall sets up, fixed box fixed connection is at the removal end lower extreme of electronic slide rail, fixed incasement fixedly connected with motor of polishing, the vertical axle of polishing of motor shaft lower extreme fixed connection, the vertical axle of polishing rotates and runs through fixed box lower extreme, the grinding head is polished to vertical axle lower extreme fixed connection, the interior left and right sides symmetry of second box rotates and sets up automatic chuck, an automatic chuck is rotated by the chuck motor drive outside the second box.
Preferably, the single crystal silicon rod polishing mechanism further comprises: the third horizontal plate is driven to lift by the driving structure, the cleaning component and the detection component are respectively arranged on the left side and the right side in the protective sleeve, the protective sleeve is also connected with a dust collection pipe in a penetrating manner, the dust collection pipe is connected with a dust collection device through a hose, and the dust collection device is fixedly connected on the right side of the fixed box;
The cleaning assembly includes: a plurality of second support rods which are arranged left and right at intervals, the upper ends of the second support rods are hinged with the inner wall of the front side of the protective sleeve, a second spring is fixedly connected between the second support rods and the inner wall of the front side of the protective sleeve, and the cleaning roller is connected with the lower ends of the second support rods;
the detection assembly includes: and a plurality of support rods III which are arranged at intervals left and right, wherein the upper ends of the support rods III are hinged with the inner wall of the rear side of the protective sleeve, a spring III is fixedly connected between the support rods III and the inner wall of the rear side of the protective sleeve, and a contact roller is connected with the lower ends of the support rods III and is provided with a detection device.
Preferably, the first connecting assembly includes: the first support rod is hinged with the lower end of the fixed box, the lower end of the first support rod is connected with a first hinged support, the first hinged support is in sliding connection with the upper end of the horizontal plate, and a first spring is fixedly connected between the first support rod and the lower end of the fixed box;
the driving structure comprises: the lower part of the vertical polishing shaft is provided with a threaded rod section, and the third horizontal plate is in threaded connection with the threaded rod section.
Preferably, the cleaning assembly and the detection assembly are controlled to oscillate by a control mechanism comprising: the gear support is fixedly connected to the three upper ends of the horizontal plates, the gear support is rotationally connected with a control gear, the control gear is driven by a gear driving motor on the gear support, the lower end of the vertical rod II is connected with a second hinged support, the second hinged support is in sliding connection with the three support rods, the lower end of the vertical rod III is connected with a third hinged support, the third hinged support is in sliding connection with the second support rods, the vertical rod II and the vertical rod III slide along the up-down direction to penetrate through the third horizontal plates, the upper end of the vertical rod II is fixedly connected with a rack block I, the upper end of the vertical rod II is fixedly connected with a rack block II, and the rack block I and the rack block II are respectively meshed with the rear side and the front side of the control gear.
Compared with the prior art, the invention has the beneficial effects that:
1. the preparation process of the monocrystalline silicon rod comprises the steps of automatically adding raw materials for preparing monocrystalline silicon through a sieving and separating type feeding device, and specifically: adding raw materials for preparing monocrystalline silicon into a first cavity or a second cavity, adding a raw material into each first cavity, adding a raw material into each second cavity, and adding each raw material into at least one first cavity or second cavity, wherein the raw materials which are not easy to block a first channel can be added into the first cavity, and the scheme can realize classified storage of the raw materials for preparing monocrystalline silicon;
2. when raw materials need to be added, a corresponding first electric valve and/or a corresponding second electric valve are/is opened, the blanking amount of the corresponding raw materials is controlled, then the raw materials fall into a corresponding first channel or a corresponding second channel, the raw materials in the first channel are filtered through a first filtering hole, the raw materials in the second channel are filtered through a second filtering hole, the filtered raw materials fall into a mixing cavity, and the raw materials can be mixed through stirring of a stirring device; the quality of raw materials added into the single crystal furnace is ensured by filtering impurities from raw materials and mixing the raw materials, and the quality of produced single crystal silicon is ensured;
The horizontal electric telescopic rod is controlled to shrink at regular intervals, so that the horizontal plate I and the horizontal plate II synchronously move along the left-right direction, impurities on the first filtering hole are scanned into an impurity collecting box of the first groove through the first elastic scraping plate, impurities on the second filtering hole are scanned into the impurity collecting box of the second groove through the second elastic scraping plate, the weight of the impurities in the impurity collecting box can be determined through weighing of the weight sensor, the weight of materials discharged from each cavity (the first cavity or the second cavity) through the corresponding discharging pipe (the first discharging pipe or the second discharging pipe) is combined, the actual discharging amount of monocrystalline silicon raw materials can be determined, and the discharging control is accurate; and can realize impurity automatic collection, promoted the efficiency that the impurity of this invention was collected.
3. According to the invention, impurities in two impurity collecting boxes can be collected by one horizontal electric telescopic rod, so that the control is convenient; and the first vertical rod can also play a role in dredging the corresponding second channel, so that the blanking effect of the invention is ensured.
The invention solves the problems of the prior art: in the existing production process of Czochralski silicon, raw materials for producing and preparing the monocrystalline silicon are generally directly added into a monocrystalline furnace, for example, CN104372406A, which is a production method of solar-grade Czochralski silicon, and the raw materials for preparing the monocrystalline silicon are not screened to remove impurities, so that the quality of the prepared silicon wafer is easily affected by impurities in the raw materials for preparing the monocrystalline silicon.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a production system of the present invention;
FIG. 2 is a schematic view of the structure of the sifting type charging device of the present invention;
FIG. 3 is a schematic view of the auxiliary frame in FIG. 2;
FIG. 4 is a left side view of the second housing of the present invention;
FIG. 5 is an enlarged schematic view of the structure A in FIG. 4;
FIG. 6 is a left side view of the second housing of FIG. 4 where the automatic chuck is located;
fig. 7 is an enlarged schematic view of the structure at B in fig. 2.
In the figure: 1. a first bottom plate; 2. a first bracket; 3. a single crystal furnace; 4. a second bracket; 5. a third bracket; 6. a sieving type feeding device; 61. an upper case; 62. a lower base; 63. a first cavity; 64. a second cavity; 65. a first discharge pipe; 66. a mixing chamber; 67. a first channel; 68. a second channel; 69. an auxiliary frame; 691. a horizontal plate I; 692. a horizontal rod I; 693. a first vertical rod; 694. a horizontal plate II; 695. a groove I; 696. a second groove; 610. a horizontal electric telescopic rod; 611. horizontal channel I; 612. an elastic scraping plate I; 613. an elastic scraping plate II; 614. a second discharge pipe; 615. a horizontal channel II; 7. a monocrystalline silicon rod polishing mechanism; 71. a fixed box; 72. an electric slide rail; 73. polishing a motor; 74. a vertical polishing shaft; 75. polishing head; 76. a horizontal plate III; 77. a protective sleeve; 78. a dust collection pipe; 79. a hose; 710. a second support rod; 711. a second spring; 712. a cleaning roller; 713. a third support rod; 714. a contact roller; 715. a first support rod; 716. a first spring; 717. a threaded rod section; 8. a first case; 9. a second case; 91. a first inlet; 92. a first outlet; 10. a third case; 11. a second conveying device; 111. a second base plate; 112. a side plate; 113. a fixing frame; 12. a first conveying device; 13. a belt conveyor assembly; 14. a control mechanism; 141. a gear bracket; 142. a control gear; 143. a second vertical rod; 144. a vertical rod III; 145. a first rack block; 146. a second rack block; 15. a single crystal silicon rod; 16. a stirring motor; 17. a stirring shaft; 18. an automatic chuck; 19. a chuck motor; 20. a first conductive block; 21. and a second conductive block.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
In addition, the descriptions of the "first," "second," and the like, herein are for descriptive purposes only and are not intended to be specifically construed as order or sequence, nor are they intended to limit the invention solely for distinguishing between components or operations described in the same technical term, but are not to be construed as indicating or implying any relative importance or order of such features. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, technical solutions and technical features between the embodiments may be combined with each other, but it is necessary to base that a person skilled in the art can implement the combination of technical solutions, when the combination of technical solutions contradicts or cannot be implemented, should be considered that the combination of technical solutions does not exist, and is not within the scope of protection claimed by the present invention.
The invention provides the following examples
Embodiment 1 the embodiment of the present invention provides a method for producing czochralski silicon, as shown in fig. 1 to 3 and 7, comprising:
Step S1: preparation of a single crystal silicon rod 15 (single crystal silicon rod prepared by Czochralski method), the preparation process of the single crystal silicon rod 15 is automatically added with raw materials for preparing single crystal silicon by a sieving type feeding device 6;
step S2: the single crystal silicon rod 15 is conveyed through the first box body 8 by the first conveying device 12, and the single crystal silicon rod 15 is cooled by the cooling device in the first box body 8;
step S3: the single crystal silicon rod 15 enters the second box body 9 after passing through the first conveying device 12, and the single crystal silicon rod 15 is polished by the single crystal silicon rod polishing mechanism 7 in the second box body 9;
the sifting charging device 6 comprises: the upper box body 61 and the lower seat body 62, the lower end of the upper box body 61 is detachably connected to the upper end of the lower seat body 62, a plurality of cavity structures are arranged in the upper box body 61 at intervals front and back, each cavity structure comprises two groups of bilaterally symmetrical cavity groups, each cavity group comprises a first cavity 63 and a second cavity 64 which are arranged at intervals left and right, a first discharging pipe 65 is arranged at the lower end of the first cavity 63, a second discharging pipe 614 is arranged at the lower end of the second cavity 64, a mixing cavity 66 is arranged in the lower seat body 62, and the mixing cavity 66 is connected with a stirring device; a group of channel groups are arranged in the lower seat body 62 corresponding to each group of cavity groups, each channel group comprises a first channel 67 and a second channel 68, the first cavity 63 is communicated with the mixing cavity 66 through the first channel 67, and the second cavity 64 is communicated with the mixing cavity 66 through the second channel 68; the channel group is connected with the screening component;
Preferably, the stirring device includes: the stirring motor 16, stirring motor 16 is fixed at the middle part of lower pedestal 62 upper end, upper box 61 sets up the motor chamber that supplies stirring motor 16 to pass through, lower pedestal 62 internal rotation is connected with (mixing) shaft 17, (mixing) shaft 17 is driven by stirring motor 16, the stirring vane is set up to the part that (mixing) shaft 17 is located in the mixing chamber 66.
Preferably, two sets of side-to-side symmetric screen assemblies are connected to two sets of side-to-side adjacent channels, respectively, the left side screen assembly comprising:
the first horizontal channel 611, the first horizontal channel 611 penetrates through the left side wall of the lower seat body 62, the first horizontal channel 611 is positioned at the left lower part of the first channel 67, the fixed end of the horizontal electric telescopic rod 610 is fixedly connected to the left outer wall of the lower seat body 62, and the telescopic end of the horizontal electric telescopic rod 610 penetrates through the first horizontal channel 611 and is fixedly connected with the auxiliary frame 69;
a second horizontal channel 615, the second horizontal channel 615 penetrating the left and right sides of the second channel 68;
auxiliary frame 69, auxiliary frame 69 includes: the horizontal plate I691, the horizontal rod I692, the vertical rod I693 and the horizontal plate II 694, the horizontal plate I691 is in sliding connection with the horizontal channel I611 along the left-right direction, the right part of the upper end of the horizontal plate I691 is provided with a groove I695, the part of the horizontal plate I691 positioned at the left side of the groove I695 is provided with a plurality of filter holes I which are penetrated up and down, the right side of the horizontal plate I691 is fixedly connected with the horizontal rod I692, the upper end of the right side of the horizontal rod I692 is fixedly connected with the vertical rod I693, the upper end of the vertical rod I693 is fixedly connected with the horizontal plate II 694, the horizontal plate II 694 is in sliding connection in the horizontal channel II 615 along the left-right direction, the right side of the upper end of the horizontal plate II 694 is provided with a groove II 696, the groove II 696 and the groove I695 are respectively provided with an impurity collecting box, and the part of the horizontal plate II 694 positioned at the left side of the groove II 696 is provided with a plurality of filter holes II which are penetrated up and down; the horizontal rod one 692 is provided with a plurality of material through holes which are communicated up and down, and the cross section area of the horizontal rod one 692 is smaller than the cross section area of the second channel 68;
The first elastic scraping plate 612 and the second elastic scraping plate 613 are embedded in the left side of the first channel 67, the first elastic scraping plate 612 is contacted with the upper end of the first horizontal plate 691, the second elastic scraping plate 613 is embedded in the left side of the second channel 68, and the second elastic scraping plate 613 is contacted with the upper end of the second horizontal plate 694.
Preferably, weight sensors are arranged in the second groove 696 and the first groove 695, the weight sensors are used for weighing the total weight of the impurity collecting box and the impurities in the impurity collecting box, a first electric valve is arranged on the first discharge pipe 65, and a second electric valve is arranged on the second discharge pipe 614;
the step S1 comprises the following steps:
step S11: adding raw materials for preparing monocrystalline silicon into the first cavity 63 or the second cavity 64, and then connecting the lower end of the upper box 61 to the upper end of the lower seat 62;
step S12: preparing a monocrystalline silicon rod through a monocrystalline furnace 3; in the process of preparing the monocrystalline silicon rod, the first electric valve and the second electric valve are controlled to work, and the blanking amount of raw materials for preparing the monocrystalline silicon is determined by combining a weight sensor.
The preparation of single crystal silicon rods by a single crystal furnace 3 is the prior art, and can be seen in CN104372406A;
the working principle and beneficial effects of the technical scheme are as follows:
1. the raw materials for preparing the monocrystalline silicon are automatically added through the sieving and separating type feeding device 6 in the preparation process of the monocrystalline silicon rod, and specifically: adding raw materials for preparing monocrystalline silicon into a first cavity 63 or a second cavity 64, adding one raw material into each first cavity 63, adding one raw material into each second cavity 64, and adding each raw material into at least one first cavity 63 or second cavity 64, wherein raw materials which are not easy to block a first channel 67 can be added into the first cavity 63, and the scheme can realize classified storage of the raw materials for preparing monocrystalline silicon;
2. When raw materials need to be added, a corresponding first electric valve and/or a corresponding second electric valve are/is opened, the blanking amount of the corresponding raw materials is controlled, then the raw materials fall into a corresponding first channel 67 or a corresponding second channel 68, the raw materials in the first channel 67 are filtered through a first filtering hole, the raw materials in the second channel 68 are filtered through a second filtering hole, the filtered raw materials fall into a mixing cavity 66, and the raw materials can be mixed by stirring through a stirring device; the quality of raw materials added into the single crystal furnace 3 is ensured by filtering impurities of the raw materials and mixing the raw materials, and the quality of the produced single crystal silicon is ensured;
every certain time, on the basis of fig. 2, the horizontal electric telescopic rod 610 is controlled to shrink, so that the horizontal plate one 691 and the horizontal plate two 694 synchronously move along the left-right direction, impurities on the first filtering hole are scanned into the impurity collecting box of the first groove 695 through the first elastic scraping plate 612, impurities on the second filtering hole are scanned into the impurity collecting box of the second groove 696 through the second elastic scraping plate 613, the weight of the impurities in the impurity collecting box can be determined through weighing of a weight sensor, and the actual blanking amount of monocrystalline silicon raw materials can be determined by combining the weight of materials discharged from each cavity (the first cavity 63 or the second cavity 64) through the corresponding discharging pipe (the first discharging pipe 65 or the second discharging pipe 614); and can realize impurity automatic collection, promoted the efficiency that the impurity of this invention was collected.
3. The invention can collect impurities in two impurity collecting boxes through the horizontal electric telescopic rod 610, and is convenient to control; and the first vertical rod 693 can also play a role in dredging the corresponding second channel 68, so that the blanking effect of the invention is ensured.
The invention solves the problems of the prior art: in the existing production process of Czochralski silicon, raw materials for producing and preparing the monocrystalline silicon are generally directly added into a monocrystalline furnace, for example, CN104372406A, which is a production method of solar-grade Czochralski silicon, and the raw materials for preparing the monocrystalline silicon are not screened to remove impurities, so that the quality of the prepared silicon wafer is easily affected by impurities in the raw materials for preparing the monocrystalline silicon.
Example 2 the present invention also discloses a production system of Czochralski silicon, which is applied to a production method of Czochralski silicon, as shown in FIG. 1, the production system of Czochralski silicon comprises:
the single crystal furnace comprises a first bottom plate 1, wherein the upper end of the first bottom plate 1 is fixedly connected with a first support 2, the upper end of the first support 2 is fixedly connected with a single crystal furnace 3, a second support 4 is fixedly arranged on one side, located on the single crystal furnace 3, of the first bottom plate 1, the second support 4 is fixedly connected with the single crystal furnace 3, a third support 5 is fixedly connected to the upper end, located on the other side, of the single crystal furnace 3, of the first bottom plate 1, and a screening type feeding device 6 is fixedly connected to the upper end of the third support 5;
The first conveyor 12, first box 8 sets up on first conveyor 12, first box 8 internal connection cooling device, the output side of first conveyor 12 and the input side fixed connection of second box 9, the input side of second box 9 sets up first import 91, the output side of second box 9 sets up first export 92, the input side of second conveyor 11 and the output side fixed connection of second box 9, be connected with monocrystalline silicon stick grinding machanism 7 in the second box 9, third box 10 has been set up on the second conveyor 11, be connected with outward appearance detection device in the third box 10, first box 8 and third box 10 lower extreme all open setting.
Preferably, the first conveying device 12 and the second conveying device 11 each include: the first conveying device comprises a bottom plate II 111, two groups of side plates 112 and a plurality of groups of fixing frames 113, wherein the two groups of side plates 112 are respectively connected to the left side and the right side of the bottom plate II 111, the plurality of groups of fixing frames 113 are fixedly connected to the lower end of the bottom plate II 111 at intervals, a first conveying assembly is connected between the two groups of side plates 112, a first box 8 is connected to the upper part of the side plate 112 of the first conveying device 12, a third box 10 is connected to the upper part of the side plate 112 of the second conveying device 11, the front side of the second box 9 is fixedly connected with the rear side of the bottom plate II 111 of the first conveying device 12, and the rear side of the second box 9 is fixedly connected with the front side of the bottom plate II 111 of the second conveying device 11;
The first conveyor assembly is a belt conveyor assembly 13. The cooling device may be an existing air-cooled heat dissipating device, such as including: a heat radiation fan; the appearance detection device is also an existing appearance detection device; the first conveying component is positioned above the second bottom plate 111, and the first conveying component is not contacted with the second bottom plate 111, so that the device is in the prior art, and can be seen as a novel belt conveyor of CN216402867U and a drag reduction belt conveyor of CN 214651190U;
the beneficial effects of the technical scheme are as follows: the single crystal silicon rod 15 produced by the single crystal furnace 3 is firstly input into the first conveying device 12, and is conveyed on the first conveying device 12 through the first conveying component of the first conveying device 12 to pass through the first box body 8, and is cooled and radiated through the cooling device in the first box body 8, so that the condition that the temperature of the single crystal silicon rod 15 is too high to facilitate the operation of operators is avoided; the cooled single crystal silicon rod 15 is input into the second box 9, polishing of the single crystal silicon rod 15 is achieved through the single crystal silicon rod polishing mechanism 7, the polished single crystal silicon rod 15 is input into the third box 10 through the first conveying assembly of the second conveying device 11, appearance detection (such as detection of breakage and crack) is carried out through the appearance detection device in the third box 10, and qualified single crystal silicon rod 15 is guaranteed through the cooling, polishing and detection, so that the subsequent preparation of single crystal silicon wafers is carried out.
In embodiment 3, as shown in fig. 4 to 6, a belt conveying assembly 13 is also disposed in the second box 9, and the conveying direction of the belt conveying assembly 13 in the second box 9 is a front-back direction, and the monocrystalline silicon rod polishing mechanism 7 includes:
the fixed box 71, the electronic slide rail 72 of left and right directions is set up to the second box 9 upper end inner wall, fixed box 71 fixed connection is at the removal end lower extreme of electronic slide rail 72 (wherein, fixed box 71 also accessible vertical electric telescopic handle fixed connection is at the removal end lower extreme of electronic slide rail 72), fixed box 71 internal fixation has the motor 73 of polishing, the motor shaft lower extreme fixed connection vertical grinding axle 74 of motor 73 of polishing, vertical grinding axle 74 rotates and runs through fixed box 71 lower extreme, vertical grinding axle 74 lower extreme fixed connection polishing head 75, the symmetrical rotation of left and right sides sets up automatic chuck 18 in the second box 9, an automatic chuck 18 is driven rotatory by the chuck motor 19 outside the second box 9. The robotic chuck 18 of the present invention may be an existing robotic chuck (e.g., CN 207192377U) or an electric chuck. The electric slide rail 72 of the present invention is also an existing electric slide rail 72;
preferably, the single crystal silicon rod polishing mechanism 7 further comprises: the third horizontal plate 76, the vertical polishing shaft 74 penetrates through the third horizontal plate 76, the third horizontal plate 76 is connected with the lower end of the fixed box 71 through two groups of left-right symmetrical connecting assemblies I, the protective sleeve 77 is fixedly connected to the lower end of the third horizontal plate 76, the third horizontal plate 76 is driven to lift by a driving structure, the cleaning assemblies and the detection assemblies are respectively arranged on the left side and the right side in the protective sleeve 77, the protective sleeve 77 is also connected with a dust collection pipe 78 in a penetrating manner, the dust collection pipe 78 is connected with a dust collection device through a hose 79, and the dust collection device is fixedly connected to the right side of the fixed box 71; the dust collection device of the invention is the existing dust collection device;
The cleaning assembly includes: the upper ends of the second support rods 710 are hinged with the inner wall of the front side of the protective sleeve 77, a second spring 711 is fixedly connected between the second support rods 710 and the inner wall of the front side of the protective sleeve 77, and the cleaning roller 712 is connected with the lower ends of the second support rods 710;
the detection assembly includes: the upper ends of the supporting rods III 713 are hinged with the inner wall of the rear side of the protective sleeve 77, a spring III is fixedly connected between the supporting rods III 713 and the inner wall of the rear side of the protective sleeve 77, a contact roller 714 is connected to the lower end of the supporting rods III 713, and a detection device (the detection device can be a force sensor or a distance sensor) is arranged on the contact roller 714.
Preferably, the first connecting assembly includes: the upper end of the first support rod 715 is hinged with the lower end of the fixed box 71, the lower end of the first support rod 715 is connected with a first hinged support, the first hinged support is horizontally and slidably connected with the upper end of the third horizontal plate 76, and a first spring 716 is fixedly connected between the first support rod 715 and the lower end of the fixed box 71;
the driving structure comprises: the lower part of the vertical polishing shaft 74 is provided with a threaded rod section 717, and the third horizontal plate 76 is in threaded connection with the threaded rod section 717. The driving structure of the invention can also be an independent vertical electric telescopic rod, the vertical electric telescopic rod drives the horizontal plate III 76 to lift, the fixed end of the vertical electric telescopic rod is connected with the fixed box 71, and the telescopic end of the vertical electric telescopic rod is fixedly connected with the horizontal plate III 76;
Preferably, the cleaning assembly and the detection assembly are controlled to oscillate by a control mechanism 14, the control mechanism 14 comprising: the gear bracket 141, gear bracket 141 fixed connection is in horizontal plate three 76 upper ends, rotate on the gear bracket 141 and be connected with control gear 142, control gear 142 is driven by the gear drive motor on the gear bracket 141, vertical pole two 143 lower extreme is connected with the second hinge seat, second hinge seat and bracing piece three 713 sliding connection, vertical pole three 144 lower extreme is connected with the third hinge seat, third hinge seat and bracing piece two 710 sliding connection, vertical pole two 143 and vertical pole three 144 all run through horizontal plate three 76 along upper and lower direction slip, vertical pole two 143 upper end fixed connection rack piece one 145, vertical pole three 144 upper end fixed connection rack piece two 146, rack piece one 145 and rack piece two 146 mesh respectively in control gear 142's rear side and front side.
Preferably, a first conductive block 20 is arranged on the left side of the second vertical rod 143, a second conductive block 21 corresponding to the first conductive block 20 is arranged at the lower end of the third horizontal plate 76, and the first conductive block 20 and the second conductive block 21 are in contact conduction so that a power supply supplies power to the polishing motor 73;
in the invention, a box door can be arranged on the left side or the right side of the second box body 9, and an operator can operate in the second box body 9 (such as installing a monocrystalline silicon rod 15 on an automatic chuck 18) by opening the box door;
The working principle and beneficial effects of the technical scheme are as follows:
1. according to the invention, the monocrystalline silicon rod 15 on the belt conveying assembly 13 in the second box body 9 can be manually installed between two automatic chucks 18, then the monocrystalline silicon rod 15 is automatically clamped by the automatic chucks 18, and the monocrystalline silicon rod 15 can be driven by the chuck motor 19 to realize automatic rotation;
when polishing, the polishing motor 73 is controlled to work, firstly, the horizontal plate III 76 is matched with the threaded rod section 717, so that the protective sleeve 77 moves downwards, and the part of the lower part of the protective sleeve 77 is covered on the monocrystalline silicon rod 15, thereby avoiding that the monocrystalline silicon rod 15 flies away from the automatic chuck 18 to easily injure operators accidentally, and on the other hand, the cover of the polishing head 75 on the polishing area of the monocrystalline silicon rod 15 improves the splashing condition of scraps, and the dust collection device is convenient to work; the polishing motor 73 drives the polishing head 75 to rotate so as to polish the monocrystalline silicon rod 15, meanwhile, the chuck motor 19 is matched with the monocrystalline silicon rod 15 to drive the monocrystalline silicon rod 15 to automatically rotate, so that the monocrystalline silicon rod 15 can be polished in the circumferential direction, and meanwhile, the electric slide rail 72 can be controlled to drive the fixed box 71 and the polishing head 75 to integrally move left and right, so that the monocrystalline silicon rod 15 can be polished left and right by the polishing head 75;
In polishing, the gear driving motor is controlled to work, as shown in fig. 5, so that the cleaning roller 712 contacts with the surface of the monocrystalline silicon rod 15 (at the moment, the first conductive block 20 and the second conductive block 21 are in contact and conduction so that a power supply supplies power to the polishing motor 73), the cleaning roller 712 cleans scraps generated by polishing in the process of polishing the monocrystalline silicon rod 15, and meanwhile, a dust collection device can be started to collect dust in the protective sleeve 77 through the dust collection pipe 78, thereby ensuring the polishing environment and ensuring the cleanliness of the monocrystalline silicon rod 15;
2. after polishing, the polishing motor 73 is turned off, the gear driving motor is controlled to work, so that the first rack block 145 moves downwards, the contact roller 714 can be enabled to contact the monocrystalline silicon rod 15 downwards, whether the surface of the monocrystalline silicon rod 15 is flat or not and whether the surface size of the monocrystalline silicon rod is normal or not can be judged according to detection of a detection device (a detection device can be a force sensor or a distance sensor; whether the surface of the monocrystalline silicon rod 15 is flat or not and whether the surface size of the monocrystalline silicon rod is normal or not can be judged according to comparison of an actual detection value of the detection device and a corresponding standard detection value), and the rotation of the chuck motor 19 and the work of the electric slide rail 72 can drive detection of different positions of the monocrystalline silicon rod 15, so that rapid detection of the monocrystalline silicon rod 15 is guaranteed, and a subsequent processing mode of monocrystalline silicon is convenient to determine according to a detection result;
And when the single crystal silicon rod 15 is detected, the first rack block 145 moves downwards, the first conductive block 20 and the second conductive block 21 are separated, the situation that the grinding motor 73 is in contact with each other by mistake during the detection of the single crystal silicon rod 15, the third horizontal plate 76 is driven to move, and the damage to a detection device is easily caused is avoided.
Embodiment 4, on the basis of embodiment 3, the detection device is a force sensor, and a plurality of force sensors are arranged at intervals at the lower part of the contact roller 714; the outer side of the upper part of the contact roller 714 is provided with a plurality of first distance sensors at intervals, and the first distance sensors are used for detecting the vertical distance between the position of the first distance sensors and the lower end of the third horizontal plate 76; the outer side of the contact roller 714 is provided with a plurality of second distance sensors at intervals, and the second distance sensors are used for detecting the vertical distance between the position where the second distance sensors are positioned and the inner side wall of the protective sleeve 77; wherein the horizontal cross section of the protective sleeve 77 may be square;
the production system further comprises:
a displacement sensor for acquiring a position of the contact roller 714 along a sliding direction parallel to the electric slide rail 72;
a processing device, the processing device comprising: the dividing and numbering module is used for sequentially dividing the monocrystalline silicon rod 15 into M first areas along the length direction (left-right direction as shown in fig. 4) and numbering the first areas;wherein->Length of single crystal silicon rod- >Is the length of the contact roller 714; the positions of the M first areas are not overlapped;
the control device, first alarm, second alarm, control device respectively with gear drive motor, chuck motor 19, force transducer, distance sensor one, distance sensor two, displacement sensor, processing apparatus, first alarm, second alarm electricity are connected, control device is based on force transducer, distance sensor one, distance sensor two, displacement sensor, processing apparatus control first alarm, second alarm work, include:
step 1: the control device controls the electric slide rail 72 to work, so that the contact roller 714 is completely positioned behind each first area, the first distance sensor and the second distance sensor are controlled to work at first, a first evaluation result is obtained, and when the first evaluation result is larger than a corresponding preset value I, the control device controls the first alarm to alarm;
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representing a first evaluation result at a jth first region; max represents the maximum value, min represents the minimum value,representing the detection value of the ith distance sensor one at the jth first area,/-j>Representing the detection value of the ith distance sensor II at the jth first area; />Is the influence coefficient of the vertical position of the contact roller 714 on the detection result of the force sensor; For the influence coefficient of the horizontal direction position of the contact roller 714 on the detection result of the force sensor, +.>Is->Corresponding to a preset reference value,/->Is->Corresponding to a preset reference value,/->Is->Relative to->Deviating an influence coefficient on a detection result of the force sensor; />Is->Relative to->Deviating an influence coefficient on a detection result of the force sensor; />Is the maximum allowable vertical deviation; />Is the maximum allowable horizontal deviation; />The number of distance sensors I; />The number of second bit distance sensors; />For a first mean deviation value, +.>Is a second average deviation value;
step 2: when the first alarm does not alarm, the chuck motor 19 is controlled to rotate, the force sensors are controlled to detect the positions of the different positions in each first area for N times, a second detection result of the corresponding first area is obtained, and when the second detection result of each first area is larger than a corresponding second preset value, the control device controls the second alarm to alarm; based on the number and the position of the first areas alarmed by the second alarm,、/>、/>Determining a treatment strategy (which may include a polishing treatment, a discard treatment, and is based on +.>、/>The depth of sanding may be determined).
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A second detection result at the j-th first area; / >For the average detection value of all force sensors at the jth first area at the s-th detection, is->The detection value of the h force sensor in the detection of the s-th time at the j-th first area; />A preset reference value for the force sensor; />Detection of a kth force sensor adjacent to an h force sensor at an jth detection at the jth first region; />Is->Corresponding maximum allowable deviation; />For the first evaluation factor (value more than 1 and less than 2), +.>And is a second evaluation coefficient (the value is more than 1 and less than 2).
Optionally, an arc-shaped groove matched with the surface of the monocrystalline silicon rod 15 in shape and size is arranged at the lower part of the contact roller 714, and a plurality of force sensors are arranged in the arc-shaped groove; during detection, the gear driving motor is controlled to work so that the arc-shaped groove is in contact with the surface of the monocrystalline silicon rod 15, then the detection value of the force sensor is obtained and stored by a memory electrically connected with the control device, then the gear driving motor is controlled to work so that the arc-shaped groove is not in contact with the surface of the monocrystalline silicon rod 15, and the gear driving motor is controlled to work after the monocrystalline silicon rod 15 rotates to the next detection position, so that the detection value of the force sensor is obtained after the arc-shaped groove is in contact with the surface of the monocrystalline silicon rod 15;
the beneficial effects of the technical scheme are as follows:
1. In step 1, before each time the touch roller 714 is detected by the force sensor, it is first evaluated whether the position of the touch roller 714 is accurate, and the evaluation of whether the position of the touch roller 714 is accurate is based on: overall average deviation of the vertical of the contact roller 714Vertical tilt of contact roller 714 +.>Global average deviation +.of contact roller 714 in horizontal direction>The contact roller 714 is inclined horizontally>The influence coefficient of the vertical position of the contact roller 714 on the detection result of the force sensor and the influence coefficient of the horizontal position of the contact roller 714 on the detection result of the force sensor comprehensively determine whether the position of the contact roller 714 is accurate or not, the evaluation is reliable, the force sensor detection is carried out after the position of the contact roller 714 is accurate or not, and the reliability of the force sensor detection is ensured;
2. in the step 2, during specific detection, determining whether the size of each first area is normal or not based on the force sensor, and providing a theoretical basis for the subsequent reprocessing of the monocrystalline silicon rod;
first, a second detection result at each first region is determined, and based on the average stress state (size state) of the force sensor in each first regionThe overall maximum dimension difference (maximum stress and minimum stress state) of each first region +. >Status of dimensional difference of adjacent positions of each first regionThe method comprises the steps of carrying out a first treatment on the surface of the Determining whether the corresponding first area is abnormal, alarming by a second alarm in time when the corresponding first area is abnormal, and based on the number and the positions of the first areas which are alarmed by the second alarm, specific comprehensive abnormal state->Overall maximum dimension difference (maximum stress and minimum stress state) of the first region ∈>Dimension difference state of adjacent position in first region ∈>The treatment strategy (which may include polishing treatment, scrapping treatment) for the single crystal silicon rod 15 is determined, ensuring accurate and reliable reprocessing of the single crystal silicon rod.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (8)

1. The production method of the Czochralski silicon is characterized in that: comprising the following steps:
step S1: preparing a monocrystalline silicon rod (15), wherein raw materials for preparing monocrystalline silicon are automatically added in the preparation process of the monocrystalline silicon rod (15) through a sieving and separating type feeding device (6);
step S2: the single crystal silicon rod (15) is conveyed through the first box body (8) by the first conveying device (12), and the single crystal silicon rod (15) is cooled by the cooling device in the first box body (8);
Step S3: the monocrystalline silicon rod (15) enters the second box body (9) after passing through the first conveying device (12), and the monocrystalline silicon rod (15) is polished by a monocrystalline silicon rod polishing mechanism (7) in the second box body (9);
the sieving type feeding device (6) comprises: the upper box body (61) and the lower seat body (62), the lower end of the upper box body (61) is detachably connected to the upper end of the lower seat body (62), a plurality of cavity structures are arranged in the upper box body (61) at intervals from front to back, each cavity structure comprises two groups of left and right symmetrical cavity groups, each cavity group comprises a first cavity (63) and a second cavity (64) which are arranged at intervals from left to right, a first discharging pipe (65) is arranged at the lower end of the first cavity (63), a second discharging pipe (614) is arranged at the lower end of the second cavity (64), a mixing cavity (66) is arranged in the lower seat body (62), and the mixing cavity (66) is connected with a stirring device; a group of channel groups are arranged in the lower seat body (62) corresponding to each group of cavity groups, each channel group comprises a first channel (67) and a second channel (68), the first cavity (63) is communicated with the mixing cavity (66) through the first channel (67), and the second cavity (64) is communicated with the mixing cavity (66) through the second channel (68); the channel group is connected with the screening component;
two sets of bilateral symmetry's screening assembly are connected with two sets of passageway groups adjacent about respectively, and left side screening assembly includes:
The first horizontal channel (611) penetrates through the left side wall of the lower seat body (62), the first horizontal channel (611) is positioned at the left lower part of the first channel (67), the fixed end of the horizontal electric telescopic rod (610) is fixedly connected to the left outer wall of the lower seat body (62), and the telescopic end of the horizontal electric telescopic rod (610) penetrates through the first horizontal channel (611) and is fixedly connected with the auxiliary frame (69);
the horizontal channel II (615), the horizontal channel II (615) is communicated with the left side and the right side of the second channel (68);
an auxiliary frame (69), the auxiliary frame (69) comprising: the device comprises a horizontal plate I (691), a horizontal rod I (692), a vertical rod I (693) and a horizontal plate II (694), wherein the horizontal plate I (691) is in sliding connection with the horizontal channel I (611) along the left-right direction, a groove I (695) is arranged at the right part of the upper end of the horizontal plate I (691), a plurality of filter holes I which are penetrated up and down are arranged at the left side of the groove I (695) of the horizontal plate I (691), the horizontal rod I (692) is fixedly connected with the right side of the horizontal plate I (691), the vertical rod I (693) is fixedly connected with the horizontal plate II (694), the horizontal plate II (694) is in sliding connection in the horizontal channel II (615) along the left-right direction, a groove II (696) is arranged at the right side of the upper end of the horizontal plate II (694), an impurity collection box is arranged in the groove II (696) and the groove I (695), and the horizontal plate II (694) is positioned at the left side of the groove II (696); a plurality of material through holes which are communicated up and down are arranged on the horizontal rod I (692), and the cross section area of the horizontal rod I (692) is smaller than the cross section area of the second channel (68);
The first elastic scraping plate (612) and the second elastic scraping plate (613) are embedded in the left side of the first channel (67), the first elastic scraping plate (612) is in contact with the upper end of the first horizontal plate (691), the second elastic scraping plate (613) is embedded in the left side of the second channel (68), and the second elastic scraping plate (613) is in contact with the upper end of the second horizontal plate (694).
2. The method for producing czochralski silicon according to claim 1, wherein weight sensors are arranged in the second groove (696) and the first groove (695), the weight sensors are used for weighing the total weight of the impurity collecting box and the impurities in the impurity collecting box, a first electric valve is arranged on the first discharge pipe (65), and a second electric valve is arranged on the second discharge pipe (614); the step S1 comprises the following steps:
step S11: adding raw materials for preparing monocrystalline silicon into a first cavity (63) or a second cavity (64), and then connecting the lower end of an upper box body (61) to the upper end of a lower base body (62);
step S12: preparing a monocrystalline silicon rod through a monocrystalline furnace (3); in the process of preparing the monocrystalline silicon rod, the first electric valve and the second electric valve are controlled to work, and the blanking amount of raw materials for preparing the monocrystalline silicon is determined by combining a weight sensor.
3. A production system of czochralski silicon, applied to the production method of czochralski silicon as claimed in any one of claims 1 to 2, characterized in that: the production system of Czochralski silicon comprises:
The single crystal furnace comprises a first bottom plate (1), a first support (2) is fixedly connected to the upper end of the first bottom plate (1), a single crystal furnace (3) is fixedly connected to the upper end of the first support (2), a second support (4) is fixedly arranged on one side, located in the single crystal furnace (3), of the first bottom plate (1), the second support (4) is fixedly connected with the single crystal furnace (3), a third support (5) is fixedly connected to the upper end, located in the other side, of the single crystal furnace (3), of the first bottom plate (1), and a screening type feeding device (6) is fixedly connected to the upper end of the third support (5);
the first conveying device (12), first box (8) set up on first conveying device (12), first box (8) internal connection cooling device, the output side of first conveying device (12) and the input side fixed connection of second box (9), the input side of second box (9) sets up first import (91), the output side of second box (9) sets up first export (92), the input side of second conveying device (11) and the output side fixed connection of second box (9), second box (9) internal connection has monocrystalline silicon stick grinding machanism (7), third box (10) have been set up on second conveying device (11), third box (10) internal connection has appearance detection device, first box (8) and third box (10) lower extreme all open-ended setting.
4. A production system of czochralski silicon according to claim 3, wherein: the first conveying device (12) and the second conveying device (11) each comprise: the device comprises a bottom plate II (111), two groups of side plates (112) and a plurality of groups of fixing frames (113), wherein the two groups of side plates (112) are respectively connected to the left side and the right side of the bottom plate II (111), the plurality of groups of fixing frames (113) are fixedly connected to the lower end of the bottom plate II (111) at intervals, a first conveying assembly is connected between the two groups of side plates (112), a first box body (8) is connected to the upper part of the side plate (112) of a first conveying device (12), a third box body (10) is connected to the upper part of the side plate (112) of a second conveying device (11), the front side of the second box body (9) is fixedly connected with the rear side of the bottom plate II (111) of the first conveying device (12), and the rear side of the second box body (9) is fixedly connected with the front side of the bottom plate II (111) of the second conveying device (11);
The first conveying assembly is a belt conveying assembly (13).
5. A production system of czochralski silicon according to claim 3, wherein: the second box (9) is also internally provided with a belt conveying component (13), the conveying direction of the belt conveying component (13) in the second box (9) is the front-back direction, and the monocrystalline silicon rod polishing mechanism (7) comprises:
the fixed box (71), electronic slide rail (72) of direction about second box (9) upper end inner wall setting, fixed box (71) fixed connection is at the removal end lower extreme of electronic slide rail (72), fixedly connected with motor (73) of polishing in fixed box (71), vertical grinding axle (74) of motor shaft lower extreme fixed connection of motor (73) of polishing, vertical grinding axle (74) rotate and run through fixed box (71) lower extreme, vertical grinding axle (74) lower extreme fixed connection polishing head (75), left and right sides symmetry rotates in second box (9) sets up automatic chuck (18), an automatic chuck (18) are rotated by the outer chuck motor (19) drive of second box (9).
6. The production system of czochralski silicon of claim 5, wherein: the monocrystalline silicon rod polishing mechanism (7) further comprises: the horizontal plate III (76), the vertical polishing shaft (74) penetrates through the horizontal plate III (76), the horizontal plate III (76) is connected with the lower end of the fixed box (71) through two groups of left-right symmetrical connecting assemblies I, the protective sleeve (77) is fixedly connected to the lower end of the horizontal plate III (76), the horizontal plate III (76) is driven to lift by the driving structure, the cleaning assemblies and the detection assemblies are respectively arranged on the left side and the right side in the protective sleeve (77), the protective sleeve (77) is also connected with a dust collection pipe (78) in a penetrating mode, the dust collection pipe (78) is connected with a dust collection device through a hose (79), and the dust collection device is fixedly connected to the right side of the fixed box (71);
The cleaning assembly includes: a plurality of support rods II (710) which are arranged at intervals left and right, the upper ends of the support rods II (710) are hinged with the inner wall of the front side of the protection sleeve (77), a spring II (711) is fixedly connected between the support rods II (710) and the inner wall of the front side of the protection sleeve (77), and a cleaning roller (712) is connected at the lower end of the support rods II (710);
the detection assembly includes: and a plurality of support rods III (713) which are arranged at intervals left and right, wherein the upper ends of the support rods III (713) are hinged with the inner wall of the rear side of the protective sleeve (77), a spring III is fixedly connected between the support rods III (713) and the inner wall of the rear side of the protective sleeve (77), and a contact roller (714) is connected at the lower end of the support rods III (713) and is provided with a detection device.
7. The production system of czochralski silicon of claim 6, wherein: the first connecting component comprises: the upper end of the first support rod (715) is hinged with the lower end of the fixed box (71), the lower end of the first support rod (715) is connected with a first hinged support, the first hinged support is in sliding connection with the upper end of the third horizontal plate (76), and a first spring (716) is fixedly connected between the first support rod (715) and the lower end of the fixed box (71);
the driving structure comprises: the threaded rod section (717), the lower part of the vertical polishing shaft (74) is provided with the threaded rod section (717), and the horizontal plate III (76) is in threaded connection with the threaded rod section (717).
8. The production system of czochralski silicon of claim 6, wherein: the cleaning component and the detecting component are controlled to swing by a control mechanism (14), and the control mechanism (14) comprises: the gear bracket (141), gear bracket (141) fixedly connected with control gear (142) on horizontal plate three (76) upper end, rotate on gear bracket (141), control gear (142) are driven by gear drive motor on gear bracket (141), vertical pole two (143) lower extreme is connected with the second free bearing, second free bearing and bracing piece three (713) sliding connection, vertical pole three (144) lower extreme is connected with the third free bearing, third free bearing and bracing piece two (710) sliding connection, vertical pole two (143) and vertical pole three (144) all run through horizontal plate three (76) along upper and lower direction slip, vertical pole two (143) upper end fixed connection rack piece one (145), vertical pole three (144) upper end fixed connection rack piece two (146), rack piece one (145) and rack piece two (146) mesh respectively in the rear side and the front side of control gear (142).
CN202311132727.0A 2023-09-05 2023-09-05 Production method and production system of Czochralski silicon Active CN116949554B (en)

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