CN116938167B - Radio frequency power amplifier and radio frequency power amplifying chip - Google Patents
Radio frequency power amplifier and radio frequency power amplifying chip Download PDFInfo
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- CN116938167B CN116938167B CN202310942844.7A CN202310942844A CN116938167B CN 116938167 B CN116938167 B CN 116938167B CN 202310942844 A CN202310942844 A CN 202310942844A CN 116938167 B CN116938167 B CN 116938167B
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention relates to the technical field of radio frequency microwave circuits, in particular to a radio frequency power amplifier and a radio frequency power amplifying chip. The implementation mode of the radio frequency power amplification chip of the invention leads out a connecting wire from the transistor tube core, is connected with the input matching circuit, and connects the harmonic control circuit on the input matching circuit through the connecting wire.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave circuits, in particular to a radio frequency power amplifier and a radio frequency power amplifying chip.
Background
The radio frequency power amplifier is a key module at the tail end of a transmitter of the wireless communication system and is used for amplifying radio frequency microwave signals, and on one hand, the power amplifier is main energy-consuming equipment of the wireless communication system and has high efficiency requirements; on the other hand, linearity is also considered for the consideration of signal quality.
In the field of power amplifier design, the processing of harmonic signals directly affects the efficiency and linearity of a power amplifier, and harmonic processing is provided in a packaged power device during the design of the amplifier, on one hand, the signals are shaped, the current-voltage overlapping is minimized, and the efficiency is improved; on the other hand, intermodulation distortion introduced by harmonic waves is reduced through the harmonic control circuit, and the linearity of the power tube is improved. From the broadband matching point of view, the closer the harmonic processing is to the discharge transistor, the smaller the parasitic interference is, and the wider the efficiency bandwidth that the harmonic control circuit can achieve.
The traditional input harmonic termination circuit is connected between the lead wire of the control end of the die and the ground, and the input harmonic circuit is nearest to the transistor and comprises a harmonic termination capacitor and a harmonic termination inductor, so that a low-resistance path is provided for signals under harmonic frequency, and the linearity and the efficiency of the power amplifier are improved.
With the continuous progress of technology, the area of the transistor is continuously reduced, so that it is increasingly difficult to simultaneously implement the harmonic termination circuit on a transistor with a reduced area. Therefore, a new structure is needed to solve the problem of input harmonics within the power device package to achieve high efficiency of the power device broadband.
Disclosure of Invention
The embodiment of the invention provides a radio frequency power amplifier and a radio frequency power amplifying chip, which are used for solving the problem that the efficiency of the radio frequency power amplifier is reduced when a harmonic termination circuit is difficult to realize in the prior art.
In a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, including: a transistor die, a fundamental matching circuit, and a harmonic control circuit;
the third end of the fundamental wave matching circuit is electrically connected with the control end of the transistor tube core, the second end of the fundamental wave matching circuit is electrically connected with the first end of the harmonic control circuit, and the second end of the harmonic control circuit is grounded;
when the first end of the fundamental wave matching circuit is connected with a first radio frequency signal, the harmonic control circuit changes the waveform of the first radio frequency signal input to the control end of the transistor tube core by providing a low-resistance path for harmonic waves contained in the first radio frequency signal, and the transistor tube core completes impedance matching of the first radio frequency signal through the fundamental wave matching circuit.
In one possible implementation, the fundamental matching circuit includes:
a first inductor, a second inductor and a first capacitor;
the second end of the first inductor is electrically connected with the first end of the second inductor and the first end of the first capacitor, and the second end of the second inductor is electrically connected with the control end of the transistor die; the second end of the first capacitor is grounded.
In one possible implementation, the harmonic control circuit includes:
a third inductor and a second capacitor;
the first end of the third inductor is electrically connected with the second end of the first inductor, the first end of the second inductor and the first end of the first capacitor; the second end of the third inductor is electrically connected with the first end of the second capacitor, and the second end of the second capacitor is grounded;
when the harmonic frequency of the harmonic wave input to the third inductor reaches a target frequency value, the third inductor and the second capacitor resonate to form a zero-impedance path, and the harmonic wave of the target frequency value is bypassed.
In one possible implementation, the radio frequency power amplifier further includes: an output matching circuit;
a first end of the output matching circuit is electrically connected with a first conductive end of the transistor die, and a second conductive end of the transistor is grounded;
and when the first conductive end outputs a second radio frequency signal, the output matching circuit is used for completing the matching of output impedance.
In one possible implementation, the output matching circuit includes:
a fourth inductor, a fifth inductor, a sixth inductor, a third capacitor and a fourth capacitor;
the first end of the fourth inductor is electrically connected with the first conductive end, the first end of the third capacitor and the first end of the fifth inductor are electrically connected with the second end of the fourth inductor, and the first end of the fourth capacitor and the first end of the sixth inductor are electrically connected with the second end of the fifth inductor; the second end of the third capacitor is grounded.
In a second aspect, an embodiment of the present invention provides a radio frequency power amplifying chip, configured to implement a radio frequency power amplifier as described above in the first aspect or any one of the possible implementation manners of the first aspect, where a transistor die of the radio frequency power amplifying chip includes:
a plurality of cell transistor cells and a plurality of balancing resistors;
the control ends of the plurality of unit transistor cells are respectively and electrically connected with the second ends of the plurality of balance resistors;
the first ends of the plurality of balance resistors are electrically connected to form a control end of the transistor die;
the first conductive terminals of the plurality of cell transistor cells are electrically connected to form the first conductive terminal of the transistor die;
the second conductive terminals of the plurality of cell transistor cells are electrically connected to form the second conductive terminal of the transistor die.
In one possible implementation, the meta-transistor cell includes: a plurality of active transistors connected in parallel according to correspondence of terminals.
In one possible implementation manner, the radio frequency power amplification chip further includes:
a plurality of control terminal leads, a plurality of first inductance connecting lines and a first capacitor;
the second ends of the control end leads are electrically connected with the first ends of the balance resistors, and the first ends of the control end leads and the second ends of the first inductance connecting wires are electrically connected with the first ends of the first capacitors;
the second end of the first capacitor is grounded.
In one possible implementation manner, the radio frequency power amplification chip further includes: a harmonic control circuit; the first end of the harmonic control circuit is electrically connected with the first end of the first capacitor, and the second end of the harmonic control circuit is grounded.
In one possible implementation manner, the radio frequency power amplification chip further includes:
a plurality of first conductive leads;
the first ends of the plurality of first conductive leads are electrically connected to the plurality of first conductive ends, and the second ends of the plurality of first conductive leads are electrically connected.
Compared with the prior art, the embodiment of the invention has the beneficial effects that:
according to the radio frequency power amplifier implementation mode, a low-resistance channel is built for harmonic waves in a mode that a harmonic control circuit is connected with a fundamental wave matching circuit, when the target harmonic frequency reaches the resonance point of the harmonic control circuit, the harmonic waves are bypassed, so that the waveform of a control transistor tube core is similar to that of a rectangular wave, and as the waveform of the rectangular wave is higher in efficiency and smaller in heating value for the transistor, the efficiency of the transistor is improved, and the heating and loss of the transistor are reduced.
Compared with the traditional mode that two connecting wires are led out of the transistor tube core and are respectively connected with the input matching circuit and the harmonic control circuit, the mode that the two connecting wires are respectively connected with the input matching circuit and the harmonic control circuit is adopted, the area of a transistor is saved, and the harmonic control circuit is connected with the input matching circuit, so that the input radio frequency waveform can be adjusted, the transistor tube core works at a point with higher efficiency, the integral efficiency of the chip is improved, and the heating value is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a radio frequency power amplifier provided by an embodiment of the present invention;
FIG. 2 is a top perspective view of a radio frequency amplifying chip provided by an embodiment of the present invention;
fig. 3 is a side perspective view of a radio frequency amplifying chip provided in an embodiment of the present invention.
In the figure:
a radio frequency power amplifier 100;
a power amplifier input 101;
a power amplifier output 102;
a first inductor 103;
a second inductor 104;
a first capacitor 105;
a third inductance 106;
a second capacitor 107;
a transistor die 108;
a fourth inductor 109;
a fifth inductance 110;
a third capacitor 111;
a fourth capacitor 112;
a sixth inductor 113;
a harmonic control circuit 120;
a control end 121;
a first conductive end 122;
a second conductive terminal 123;
a fundamental wave matching circuit 130;
an output matching circuit 140;
an input matching circuit 150;
a radio frequency power amplifying chip 200;
an input lead 201;
an output lead 202;
a harmonic capacitor 203;
a first filter capacitor 204;
a transistor die 205;
a second filter capacitor 206;
a third filter capacitor 207;
a first inductor connection 208;
a harmonic connection line 209;
a control terminal lead 210;
a second inductance connecting line 211;
a third inductance connection line 212;
a fourth inductance connection line 213;
a fitting base 220;
an insulating medium 230;
drain lead 302.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following description will be made with reference to the accompanying drawings.
The following describes in detail the embodiments of the present invention, and the present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation procedure are given, but the protection scope of the present invention is not limited to the following embodiments.
Fig. 1 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention.
Referring to fig. 1, a schematic diagram of a radio frequency power amplifier according to a first aspect of the present invention is shown, and the details are as follows:
a radio frequency power amplifier comprising: a transistor die, a fundamental matching circuit, and a harmonic control circuit;
the third end of the fundamental wave matching circuit is electrically connected with the control end of the transistor tube core, the second end of the fundamental wave matching circuit is electrically connected with the first end of the harmonic control circuit, and the second end of the harmonic control circuit is grounded;
when the first end of the fundamental wave matching circuit is connected with a first radio frequency signal, the harmonic control circuit changes the waveform of the first radio frequency signal input to the control end of the transistor tube core by providing a low-resistance path for harmonic waves contained in the first radio frequency signal, and the transistor tube core completes impedance matching of the first radio frequency signal through the fundamental wave matching circuit.
In one possible implementation, the fundamental matching circuit includes:
a first inductor, a second inductor and a first capacitor;
the second end of the first inductor is electrically connected with the first end of the second inductor and the first end of the first capacitor, and the second end of the second inductor is electrically connected with the control end of the transistor die; the second end of the first capacitor is grounded.
In one possible implementation, the harmonic control circuit includes:
a third inductor and a second capacitor;
the first end of the third inductor is electrically connected with the second end of the first inductor, the first end of the second inductor and the first end of the first capacitor; the second end of the third inductor is electrically connected with the first end of the second capacitor, and the second end of the second capacitor is grounded;
when the harmonic frequency of the harmonic wave input to the third inductor reaches a target frequency value, the third inductor and the second capacitor resonate to form a zero-impedance path, and the harmonic wave of the target frequency value is bypassed.
Illustratively, fig. 1 is a schematic diagram of a radio frequency power amplifier 100, in an embodiment, the radio frequency power amplifier 100 includes a power radio frequency power amplifier input 101, a power amplifier output 102, a transistor die 108, an input matching circuit 150 (including a fundamental matching circuit 130 and a harmonic control circuit 120), and an output matching circuit 140.
According to the above embodiment, the transistor die 108 is an active device, and the transistor 108 includes a control terminal 121, a first conductive terminal 122, and a second conductive terminal 123, the first conductive terminal 122, the second conductive terminal 123 being separated by a variable conduction channel, the channel being both turned off and on by the gate terminal 121. The transistor die may be a FET transistor with the control terminal 121 being the gate, the first conductive terminal 122 being the drain, the second conductive terminal 123 being the source, the source of the transistor die 108 being connected to a common ground reference. The control terminal 121 is connected to the rf power amplifier input 101 through an input matching circuit 150, enabling electrical signal connection of signals from the rf power amplifier input 101 to the transistor die 108. After amplifying the input electrical signal, the transistor has an output terminal connected to the power amplifier output 102 via the matching circuit 140, so as to output an amplified signal.
According to the transistor 108, which may be a gan power amplifier transistor, the input capacitor Cgs has strong nonlinear characteristics, which impairs linearity and efficiency, and restricts broadband matching. It may also be realized in other semiconductor materials of LDMOS (laterally diffused metal oxide semiconductor ).
The input matching circuit 150 is comprised of an input T-match 130 and an input harmonic control 120.
The input T-match 130 is composed of a first inductor 103, a first capacitor 105 and a first inductor 104, wherein one side of the first capacitor 105 is electrically connected with the first inductor 103 and the first inductor 104, the other side is connected to a ground reference point, one side of the first inductor 104 is electrically connected to the transistor input terminal 121, and the other side is connected to the non-ground terminal of the first capacitor 105. The first inductor 103 is connected on one side to the first capacitor 105 and on the other side to the radio frequency power amplifier input 101.
The first inductor 103, the first inductor 104 and the first capacitor 105 form a T-topology, enabling transmission of an input electrical signal from the rf power amplifier input 101 to the transistor input. The power device is influenced by the input parasitic capacitance of the transistor tube core, has extremely small input impedance, the matching circuit is complex and narrow-band, the high-low frequency band index requirement under the broadband application can not be considered, the first inductors 104 and 103 and the first capacitor 105 form a low-pass filter, meanwhile, the power device has an impedance matching function, the low input impedance of the input side of the transistor 108 is matched into the input impedance with larger real part, reasonable real-imaginary part proportion and small broadband internal impedance fluctuation, and the external matching design of the power amplifier is easy. According to embodiment 103, the inductance value of the first inductor 104 is between 10 picohenries (pH) and 1 nanohenries (nH), the capacitance value of the first capacitor 105 is between 1pF and 300pF, and the capacitance value can be selected to be a relatively large value, so that the fluctuation in the input impedance broadband can be reduced, and a relatively wide input impedance bandwidth can be realized.
The harmonic control circuit 120 is connected to the non-grounded reference point end of the first capacitor 105, and includes a third inductor 106 and a second capacitor 107 connected in series, and controls the device values of the third inductor 106 and the second capacitor 107 to adjust the resonant frequency, and after working in cooperation with the fundamental wave matching circuit 130 (T-type matching circuit), a second harmonic impedance path is constructed at the input end face of the die. According to an embodiment, the sensing range of the third inductor 106 is between 10 picohenries (pH) and 1 nanohenries (nH), the capacitance value of the second capacitor 107 is between 1pF and 100pF, and the selection values of the third inductor 106 and the second capacitor 107 for implementing the second harmonic low-resistance path are affected by the mutual coupling between the first inductor 103 and the third inductor 106.
In the case where the die control terminal 121 is not capable of bonding two sets of bond wires, the bond input harmonic control circuit 120 is relatively closest to the die, and the device efficiency and linear bandwidth achieved are also relatively widest.
According to an embodiment, the output is matched with a connection between the transistor die 108 output and the power amplifier output 102.
According to the embodiment of the invention, a low-resistance channel is built for the harmonic wave by adopting a mode that the harmonic control circuit is connected with the fundamental wave matching circuit, and when the target harmonic frequency reaches the resonance point of the harmonic control circuit, the harmonic wave is bypassed, so that the waveform of the control transistor tube core is similar to that of a rectangular wave.
In some implementations, the radio frequency power amplifier further includes: an output matching circuit;
a first end of the output matching circuit is electrically connected with a first conductive end of the transistor die, and a second conductive end of the transistor is grounded;
and when the first conductive end outputs a second radio frequency signal, the output matching circuit is used for completing the matching of output impedance.
In some implementations, the output matching circuit includes:
a fourth inductor, a fifth inductor, a sixth inductor, a third capacitor and a fourth capacitor;
the first end of the fourth inductor is electrically connected with the first conductive end, the first end of the third capacitor and the first end of the fifth inductor are electrically connected with the second end of the fourth inductor, and the first end of the fourth capacitor and the first end of the sixth inductor are electrically connected with the second end of the fifth inductor; the second end of the third capacitor is grounded.
Illustratively, as shown in fig. 1, the output matching circuit 140 includes a fourth inductor 109, a fifth inductor 110, a sixth inductor 113, a third capacitor 111, and a fourth capacitor 112. Wherein inductive element 122 is connected between the output of transistor 108 and node 125, third capacitance 111 is connected between node 125 and ground reference, fifth inductance 110 is connected between node 125 and node 126, fourth capacitance 112 is connected between node 126 and ground reference, and sixth inductance 113 is connected between node 126 and power amplifier output 102, which together form an output pi-type match.
The output matching bandwidth characteristic of the power amplifier is limited by the Q value control of a matching network from the current source end face of the die to the final 50ohm terminal, the Q value is the absolute value of the imaginary part divided by the real part of the input impedance of a certain matching end face, the highest Q value of the full matching track limits the impedance matching bandwidth, and the lower the Q value is, the smaller the variation in the impedance bandwidth range is, namely the higher the impedance convergence degree is.
On the other hand, the power amplifier is affected by parasitic capacitance Cds, the output impedance is extremely small, and direct matching to a 50ohm terminal will result in a larger conductor loss. By adjusting the inductance values 109, 110, 113 and the capacitance values 111, 112 of the inductive devices, the Q-value is reduced as much as possible at control nodes 122, 125, and 126, and the very low output impedance at the end of die 122 is matched to a higher impedance value, such as around 10 ohms, a wider bandwidth, lower conductor loss circuit match for the power amplifier can be achieved.
As shown in fig. 2, the second aspect of the present invention provides a radio frequency power amplifying chip, where the radio frequency power amplifying chip is configured to implement a radio frequency power amplifier according to the first aspect or any one of the possible implementation manners of the first aspect, and a transistor die of the radio frequency power amplifying chip includes:
a plurality of cell transistor cells and a plurality of balancing resistors;
the control ends of the plurality of unit transistor cells are respectively and electrically connected with the second ends of the plurality of balance resistors;
the first ends of the plurality of balance resistors are electrically connected to form a control end of the transistor die;
the first conductive terminals of the plurality of cell transistor cells are electrically connected to form the first conductive terminal of the transistor die;
the second conductive terminals of the plurality of cell transistor cells are electrically connected to form the second conductive terminal of the transistor die.
In some implementations, the meta-transistor cell includes: a plurality of active transistors connected in parallel according to correspondence of terminals.
In some implementations, the radio frequency power amplifying chip further includes:
a plurality of control terminal leads, a plurality of first inductance connecting lines and a first capacitor;
the second ends of the control end leads are electrically connected with the first ends of the balance resistors, and the first ends of the control end leads and the second ends of the first inductance connecting wires are electrically connected with the first ends of the first capacitors;
the second end of the first capacitor is grounded.
In some implementations, the radio frequency power amplifying chip further includes: a harmonic control circuit;
the first end of the harmonic control circuit is electrically connected with the first end of the first capacitor, and the second end of the harmonic control circuit is grounded.
In some implementations, the radio frequency power amplifying chip further includes:
a plurality of first conductive leads;
the first ends of the plurality of first conductive leads are electrically connected to the plurality of first conductive ends, and the second ends of the plurality of first conductive leads are electrically connected.
Illustratively, the rf power amplifying chip 200 is a top view of a packaged rf power amplifying chip, and the amplifier is composed of a transistor die, an input matching circuit, an output matching circuit and a package case, wherein the power amplifier input matching circuit includes a T-type fundamental matching circuit and a harmonic control circuit.
In the illustration, the package housing is comprised of a mounting base 220, input leads 201, output leads 202, and an insulating medium 230.
The mounting base 220 is made of a metal material, such as copper, nickel, metal alloy, etc., and provides a common reference ground node for the power amplifier, and in addition, the mounting base also provides a heat dissipation function, thereby reducing the probability of greatly reducing the saturated power of the die due to overheating and damaging the device.
The insulating medium 230 provides electrical isolation between the assembly base 220 and the input lead 201 and the output lead 202, and is generally made of ceramic materials or other non-conductive media, the insulating medium 230 is illustrated as an insulating medium ring, which can provide a better internal circuit sealing effect for the device and isolate external water vapor, and can also be a plurality of independent rectangular medium rings to realize isolation from the input lead to the assembly base due to material saving.
The input lead 201 and the output lead 202 are mounted on the insulating medium 230, the input lead 201 and the output lead 202 play a role of circuit bridging, external input electric signals are transmitted to the transistor core 205 through the input matching circuit, and signals amplified by the transistor core 205 are transmitted to the outside through the output matching circuit and the output lead 202.
The illustrated transistor die 205 is a multi-transistor parallel structure, the transistor being an active device, including a control terminal, a first conductive terminal, and a second conductive terminal, the two conductive terminals being separated by a variable conductivity channel, the current between the conductive terminals being adjusted by adjusting a control signal at the control terminal. Transistor die 205 is optionally a FET power device, with the control terminal being the gate, the first conductive terminal being the drain, and the second conductive terminal being the source.
The active transistors are connected in parallel to form a single cell, and then the power device transistor die is formed by connecting the plurality of cells in parallel, and fig. 3 shows a control end bonding wire of the single cell, which may be also called a gate cell wire. To achieve phase balance and die stability among transistor die multiple cells, the cell control terminal leads 210 of a cell typically have balanced resistances with adjacent cell control terminal leads of a cell. The drain lead is drain lead 302. A plurality of cell control terminal leads 210 are connected to the input lead input 201 by an input matching circuit. The corresponding transistor drain lead 302 is connected to the output lead 202 through an output matching network. The source of the die is electrically connected to the mounting base 220, enabling common ground of the source and ground reference points.
In the traditional input harmonic control, one group of connecting wires connected to a grid package is used as harmonic control inductance and the other group of connecting wires are used as fundamental wave working frequency band matching inductance, parameters such as the whole area of a transistor core, the size of a control end lead of a cell transistor and the like are continuously reduced based on resource investment and performance so as to save cost, the longitudinal length of the control end lead of the cell transistor can be only 50-250 um, the bonding wire diameter of the connecting wires is generally between 25-75 um, and the two groups of connecting wires are difficult to realize on the control end lead of the cell transistor with a reduced area simultaneously in consideration of the requirements of current resistance on the wire diameter and the bonding on the wire spacing.
In order to solve the above-mentioned problem, as shown in the radio frequency power amplifying chip 200, an input matching network of a transistor is connected between an input pin input lead 201 and a gate control terminal of a die transistor die 205, and is composed of a T-type matching circuit (fundamental wave matching circuit) and a harmonic control circuit.
The T-match circuit is comprised of a control terminal lead 210, a first filter capacitor 204, and a first inductor connection 208. One end of the control terminal lead 210 is connected to the gate terminal of the transistor die 205, one end is connected to the first filter capacitor 204, and the other group of first inductance connecting wires 208 led out from the first filter capacitor 204 are connected to the input lead 201, so that the whole matching network is a T-shaped matching network.
The device is influenced by the input parasitic capacitance of the transistor tube core, has extremely small input impedance, the matching circuit is complex and narrow-band, the high-low frequency band index requirement under the broadband application can not be considered, the control end lead 210, the first inductance connecting wire 208 and the first filter capacitor 204 form a low-pass filter, meanwhile, the device has an impedance matching function, the low input impedance of the input side of the transistor tube core 205 is matched into the input impedance with larger real part, reasonable real-imaginary part proportion and small broadband internal impedance fluctuation, and the external matching design of the power amplifier is easy. According to an embodiment, the control terminal lead 210 and the first inductance connecting line 208 mainly achieve the inductance effect, and are usually made of metal materials such as bonding alloy wires, silver wires, aluminum wires, etc., the inductance of the control terminal lead 210 is between 10 picohenries (pH) and 1 nanohenries (nH), the capacitance value of the harmonic capacitor 203 is typically between 1pF and 200pF, the capacitance value can be selected to be relatively large, the first inductance connecting line 208 is typically relatively small, and the inductance of the first inductance connecting line 208 is typically between 10 picohenries (pH) and 0.5 nanohenries (nH), so that the input impedance broadband internal fluctuation can be reduced, and a relatively wide input impedance bandwidth can be achieved.
The input side harmonic control circuit has a harmonic connection 209 and a harmonic capacitor 203. Unlike conventional input test harmonic control circuits, the harmonic connection 209 of the harmonic control circuit is not connected to the die gate terminal, but is connected to the first filter capacitor 204. The other end of the harmonic connection wire 209 is connected to the harmonic capacitor 203, one end of the harmonic capacitor 203 is connected to the harmonic connection wire 209, and the other end of the harmonic connection wire is electrically connected to the common ground of the metal base, and the connection method is an optional metal gluing method. The harmonic connection line 209 and the harmonic capacitor 203 are used for adjusting the resonant frequency, and after being matched with a T-shaped matching circuit, a second harmonic impedance path is constructed on the input end face of the transistor core 205. According to an embodiment, the sensing range of the harmonic connection line 209 is between 10 picohenries (pH) and 1 nanohenries (nH), the capacitance value of the harmonic capacitance 203 is between 1pF and 100pF, and the selection values of the harmonic connection line 209 and the harmonic capacitance 203 for implementing the second harmonic low-impedance path are affected by the mutual coupling between the harmonic connection line 209 and the first inductance connection line 208.
Under the condition that the control end lead 210 cannot bond two groups of connecting wires, the input harmonic control circuit realized by the harmonic connecting wires 209 and the harmonic capacitors 203 is relatively nearest to the die, the sensitivity of the matching effect is stronger, and the efficiency and the linear bandwidth of the realized device are also widest.
According to an embodiment, an output pi-type matching circuit is connected between the drain terminal of the transistor die 205 and the output lead 202, wherein the output matching circuit comprises a second inductor connecting line 211, a third inductor connecting line 212, a fourth inductor connecting line 213, a second filter capacitor 206, and a third filter capacitor 207. Wherein the second inductance connection line 211 is connected between the drain terminal of the transistor die 205 and the second filter capacitor 206. After the signal passes through the second inductance connecting line 211 to the second filter capacitor 206, the signal is connected to the third filter capacitor 207 through the third inductance connecting line 212 on the second filter capacitor 206, and finally is connected to the output lead 202 through the fourth inductance connecting line 213 on the third filter capacitor 207, the 3 inductance connecting lines and the two capacitance elements form a pi-type matching network, one end of the capacitance element is connected with the inductance connecting line, the other end is a grounding end, and the capacitance element and the assembly base 220 are commonly grounded through a metal adhesion mode.
Transistors are relatively insensitive to fluctuations in input impedance, while being more sensitive to fluctuations in output impedance, the wide-band output impedance fluctuations of the power amplifier will limit its index in the wide-band range. The wideband output impedance fluctuation of the power amplifier is limited by the Q value control of a matching network from the end face of a die current source to a load terminal, the Q value is the absolute value of the imaginary part divided by the real part of the input impedance at any end face of the matching network, the highest Q value of the full matching track limits the impedance matching bandwidth, and the lower the Q value is, the smaller the variation in the impedance bandwidth range is, namely the higher the impedance convergence degree is, the easier the wideband radio frequency index is realized. On the other hand, the power amplifier is affected by parasitic capacitance Cds, the output impedance is extremely small, and direct matching to a load terminal will result in larger conductor loss. By adjusting the inductance values of the second inductance connecting line 211, the third inductance connecting line 212, and the fourth inductance connecting line 213, the inductance values of the inductance devices of the second filter capacitor 206, and the capacitance values of the third filter capacitor 207, the Q value of the matching path is reduced as much as possible, and the extremely low output impedance of the end face of the die transistor core 205 is matched to a higher impedance value of the output lead 202, such as about 10 ohms, the circuit matching with wider bandwidth and lower conductor loss of the power amplifier can be realized.
Compared with the traditional mode that two connecting wires are led out of the transistor tube core and are respectively connected with the input matching circuit and the harmonic control circuit, the mode that the two connecting wires are respectively connected with the input matching circuit and the harmonic control circuit is adopted, the area of a transistor is saved, and the harmonic control circuit is connected with the input matching circuit, so that the input radio frequency waveform can be adjusted, the transistor tube core works at a point with higher efficiency, the integral efficiency of the chip is improved, and the heating value is reduced.
It should be understood that the size of each sequence number in the above embodiment does not mean the order of execution, and each function and internal logic are determined, and should not be construed as limiting the implementation process of the embodiment of the present invention.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limited thereto; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and they should be included in the protection scope of the present invention.
Claims (6)
1. A radio frequency power amplifying chip, comprising: a transistor die, a fundamental matching circuit, and a harmonic control circuit;
the third end of the fundamental wave matching circuit is electrically connected with the control end of the transistor tube core, the second end of the fundamental wave matching circuit is electrically connected with the first end of the harmonic control circuit, and the second end of the harmonic control circuit is grounded;
the fundamental wave matching circuit includes:
a first inductor, a second inductor and a first capacitor;
the second end of the first inductor is electrically connected with the first end of the second inductor and the first end of the first capacitor, and the second end of the second inductor is electrically connected with the control end of the transistor die; the second end of the first capacitor is grounded;
the harmonic control circuit includes:
a third inductor and a second capacitor;
the first end of the third inductor is electrically connected with the second end of the first inductor, the first end of the second inductor and the first end of the first capacitor; the second end of the third inductor is electrically connected with the first end of the second capacitor, and the second end of the second capacitor is grounded;
when the first end of the fundamental wave matching circuit is connected with a first radio frequency signal, the third inductor and the second capacitor resonate to form a zero-impedance passage to bypass the harmonic wave of a target frequency value, so that the waveform of the first radio frequency signal input to the control end of the transistor die is changed, and the transistor die completes impedance matching of the first radio frequency signal through the fundamental wave matching circuit;
the transistor die includes:
a plurality of cell transistor cells and a plurality of balancing resistors;
the control ends of the plurality of unit transistor cells are respectively and electrically connected with the second ends of the plurality of balance resistors;
the first ends of the plurality of balance resistors are electrically connected to form a control end of the transistor die;
the first conductive terminals of the plurality of cell transistor cells are electrically connected to form the first conductive terminal of the transistor die;
the second conductive terminals of the plurality of cell transistor cells are electrically connected to form the second conductive terminal of the transistor die.
2. The radio frequency power amplifying chip according to claim 1, further comprising: an output matching circuit;
a first end of the output matching circuit is electrically connected with a first conductive end of the transistor die, and a second conductive end of the transistor is grounded;
and when the first conductive end outputs a second radio frequency signal, the output matching circuit is used for completing the matching of output impedance.
3. The radio frequency power amplifying chip according to claim 2, wherein the output matching circuit comprises:
a fourth inductor, a fifth inductor, a sixth inductor, a third capacitor and a fourth capacitor;
the first end of the fourth inductor is electrically connected with the first conductive end, the first end of the third capacitor and the first end of the fifth inductor are electrically connected with the second end of the fourth inductor, and the first end of the fourth capacitor and the first end of the sixth inductor are electrically connected with the second end of the fifth inductor; the second end of the third capacitor is grounded.
4. The rf power amplifying chip of claim 1, wherein the meta-transistor cell comprises: a plurality of active transistors connected in parallel according to correspondence of terminals.
5. The radio frequency power amplifying chip according to claim 1, wherein the radio frequency power amplifying chip further comprises:
a plurality of control terminal leads and a plurality of first inductance connecting wires;
the second ends of the control end leads are electrically connected with the first ends of the balance resistors, and the first ends of the control end leads and the second ends of the first inductance connecting wires are electrically connected with the first ends of the first capacitors.
6. The radio frequency power amplifying chip according to any of claims 1-5, further comprising:
a plurality of first conductive leads;
the first ends of the plurality of first conductive leads are electrically connected to the plurality of first conductive ends, and the second ends of the plurality of first conductive leads are electrically connected.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6177841B1 (en) * | 1998-09-28 | 2001-01-23 | Mitsubishi Denki Kabushiki Kaisha | High frequency power amplifier |
| CN110504923A (en) * | 2018-05-18 | 2019-11-26 | 恩智浦美国有限公司 | Transistor unit and amplifier with harmonic termination circuit and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3836391A1 (en) * | 2019-12-10 | 2021-06-16 | NXP USA, Inc. | Broadband power transistor devices and amplifiers with output t-match and harmonic termination circuits and methods of manufacture thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6177841B1 (en) * | 1998-09-28 | 2001-01-23 | Mitsubishi Denki Kabushiki Kaisha | High frequency power amplifier |
| CN110504923A (en) * | 2018-05-18 | 2019-11-26 | 恩智浦美国有限公司 | Transistor unit and amplifier with harmonic termination circuit and its manufacturing method |
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