CN116937328A - Semiconductor laser element - Google Patents
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- 229910010936 LiGaO2 Inorganic materials 0.000 description 2
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- 241000209094 Oryza Species 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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Abstract
The invention provides a semiconductor laser element, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, wherein an electron storage structure is constructed on the lower limiting layer and is used for realizing the regulation and control of carrier distribution of the active layer. According to the semiconductor laser element provided by the invention, the electron storage structure is constructed on the lower limiting layer, so that the regulation and control of carrier distribution of the active layer are realized, the threshold current can be effectively reduced, the slope efficiency can be improved, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat accumulation of the active layer can be reduced, the heat conductivity and heat dissipation can be improved, and the ageing light attenuation and focusing light spot resolution of the laser can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and the like. Lasers are of various types and are classified into various types, mainly solid, gas, liquid, semiconductor, dye and other types. Compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. However, the laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of a single light-emitting diode is in mW level; 2) Use of lasers current densities up to KA/cm 2 At least 2 orders of magnitude higher than nitride light-emitting diodes, so that the electron leakage caused by the nitride light-emitting diodes is stronger, more serious Auger recombination and stronger polarization effect exist, and the electron-hole mismatch is more serious, so that more serious efficiency attenuation drop effect occurs; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output. Therefore, based on the above technical advantages, nitride semiconductor light emitting diodes are widely used.
However, the nitride semiconductor laser has the following problems in practical application: the laser uses large current, so the large current density generates large heat, and on the basis of poor heat dissipation and poor temperature characteristics of the element, the problems of rise of threshold current, decline of output optical power and slope efficiency and the like caused by thermal mismatch between semiconductor epitaxial layers are aggravated. In addition, a large amount of heat is generated due to non-radiative recombination loss and free carrier absorption in an active region of the laser chip, and resistance exists between an epitaxial material and a chip material, so that joule heat loss and carrier absorption loss can be generated under current injection, and on the basis of low thermal conductivity and poor heat dissipation performance of the chip material, the temperature of an active layer is increased, and the problems of red shift of lasing wavelength, reduction of quantum efficiency, reduction of power, increase of threshold current, shortening of service life, poor reliability and the like occur.
Disclosure of Invention
The invention aims to provide a semiconductor laser element, which solves the technical problems, realizes the regulation and control of carrier distribution of an active layer by constructing an electron storage structure on a lower limiting layer, can effectively reduce threshold current and improve slope efficiency, simultaneously reduces heat generated by non-radiative recombination loss and free carrier absorption loss, reduces heat accumulation of the active layer, improves heat conductivity and heat dissipation, and improves ageing light attenuation and focusing light spot resolution of a laser.
In order to solve the technical problems, the invention provides a semiconductor laser element, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, wherein an electron storage structure is constructed on the lower limiting layer and is used for realizing the regulation and control of the carrier distribution of the active layer.
In the scheme, the electron storage structure is constructed on the lower limiting layer so as to realize the regulation and control of the carrier distribution of the active layer, so that the threshold current can be effectively reduced, the slope efficiency can be improved, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat storage of the active layer can be reduced, the heat conductivity and heat dissipation can be improved, and the ageing light attenuation and focusing light spot resolution of the laser can be improved.
Further, the lower constraint layer includes a first level, a second level, and a third level; the electronic savings structure is constructed by the first, second and third tiers, wherein there are:
the thermal expansion coefficients among the first level, the second level and the third level are distributed in an inverted-type mode;
the elastic coefficients among the first level, the second level and the third level are distributed in an inverted mode;
the lattice constants among the first level, the second level and the third level are distributed in a positive-type.
In the scheme, the lower limiting layer can grow the structures of the first layer, the second layer and the third layer by regulating and controlling the growth means such as pressure intensity, material composition, growth temperature, growth rate, rotation speed, time, VIII ratio and the like in the growth process, so that the requirements of inverted distribution of thermal expansion coefficients, inverted distribution of elastic coefficients and positive distribution of lattice constants are met, and the construction of the electronic storage structure can be completed.
Further, the first level has a thermal expansion coefficient of a, the second level has a thermal expansion coefficient of b, and the third level has a thermal expansion coefficient of c, wherein: b is more than or equal to 2.5 and a is more than or equal to c is more than or equal to 5.5, and the unit is 10 -6 /K。
In the scheme, the thermal expansion coefficients of the first level, the second level and the third level are set, so that the thermal expansion coefficients among the first level, the second level and the third level in the lower limiting layer are distributed in an inverted mode, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat accumulation of an active layer is reduced, the heat conductivity and heat dissipation are improved, and the ageing light attenuation and the focusing light spot resolution of the laser are improved; values above or below this range do not achieve the technical effect of the present solution.
Further, the elasticity coefficient of the first level is d, the elasticity coefficient of the second level is e, and the elasticity coefficient of the third level is f, wherein: and e is more than or equal to 200 and less than or equal to f is more than or equal to d is more than or equal to 400, and the unit is GPa.
In the scheme, the elastic coefficients of the first level, the second level and the third level are set, so that the elastic coefficients among the first level, the second level and the third level in the lower limiting layer are distributed in an inverted mode, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat accumulation of an active layer is reduced, the heat conductivity and heat dissipation are improved, and the ageing light attenuation and focusing light spot resolution of the laser are improved; values above or below this range do not achieve the technical effect of the present solution.
Further, the lattice constant of the first level is g, the lattice constant of the second level is h, and the elastic coefficient of the third level is i, wherein: and i is more than or equal to 3 and g is more than or equal to h is more than or equal to 4, and the unit is the rice.
In the scheme, the lattice constants of the first level, the second level and the third level are set, so that the lattice constants among the first level, the second level and the third level in the lower limiting layer are distributed in a positive type, the regulation and control of the barrier height can be realized, the carrier distribution of the active layer is regulated and controlled, the heat generated by non-radiative recombination loss and free carrier absorption loss is reduced, the threshold current is reduced, and the slope efficiency is improved; the technical effect of the scheme cannot be achieved when the parameter range is higher or lower than the parameter range.
Further, the lower limiting layer is formed by any one or any combination of AlInGaN, alInN, alGaN, inN, alN, inGaN and GaN, and the thickness x of the lower limiting layer meets the following conditions: x is more than or equal to 10 and less than or equal to 90000, and the unit is Emi.
Further, in the lower confinement layer, there are: the In/Mg element proportion among the first level, the second level and the third level is In positive-type distribution; the Si/Mg element proportion among the first level, the second level and the third level is distributed in a positive type; the Al/Mg element ratio among the first level, the second level and the third level is distributed in a U shape.
In the scheme, the design of the In/Mg element proportion and the lattice constant distribution In the lower limiting layer can realize the regulation and control of the barrier height, so that the carrier distribution of the active layer is regulated and controlled, the heat generated by non-radiative composite loss and free carrier absorption loss is reduced, the threshold current is reduced, and the slope efficiency is improved. Meanwhile, due to the design of the Al/Mg element proportion, the thermal expansion coefficient distribution and the elastic coefficient distribution in the lower limiting layer, the heat generated by non-radiative recombination loss and free carrier absorption loss can be effectively reduced, the heat accumulation of the active layer is reduced, the heat conductivity and the heat dissipation are improved, and the ageing light attenuation and the focusing light spot resolution of the laser are improved.
Further, the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period m thereof satisfies: m is more than or equal to 1 and less than or equal to 3; wherein: the well layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p of the well layer meets the following conditions: p is more than or equal to 10 and less than or equal to 100, and the unit is the aemi; the barrier layer adopts any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q of the barrier layer is as follows: q is more than or equal to 10 and less than or equal to 200, and the unit is the Emi.
Further, the lower waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness y of the lower waveguide layer meets the following conditions: y is more than or equal to 10 and less than or equal to 8000, and the unit is Emi; the upper waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness z of the upper waveguide layer is as follows: z is more than or equal to 10 and less than or equal to 8000, and the unit is Emi.
Further, the upper limiting layer is formed by any one or any combination of AlInGaN, alInN, alGaN, inGaN, alN and GaN, and the thickness n of the upper limiting layer meets the following conditions: n is more than or equal to 10 and less than or equal to 80000, and the unit is Emi.
Further, the substrate is any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesia-alumina spinel MgAl2O4, mgO, znO, zrB2, liAlO2 and LiGaO2 composite substrate.
Drawings
FIG. 1 is a schematic diagram of a semiconductor laser device according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser device according to an embodiment of the present invention;
FIG. 3 is a SIMS secondary ion mass spectrum of a lower confinement layer of a semiconductor laser device according to an embodiment of the present invention;
FIG. 4 is a TEM transmission electron microscope image of a lower confinement layer of a semiconductor laser device according to an embodiment of the present invention;
FIG. 5 is a TEM transmission electron microscope image of a lower confinement layer and a lower waveguide layer of a semiconductor laser device according to an embodiment of the present invention;
fig. 6 is a TEM transmission electron microscope image of an active layer of a semiconductor laser device according to an embodiment of the present invention;
FIG. 7 is a TEM transmission electron microscope image of an upper waveguide layer and a lower waveguide layer of a semiconductor laser device according to an embodiment of the present invention;
FIG. 8 is a TEM transmission electron microscope image of an upper confinement layer of a semiconductor laser device according to an embodiment of the present invention;
wherein: 100. a substrate; 101. a lower confinement layer; 101a, first level; 101b: a second level; 101c: a third level; 102: a lower waveguide layer; 103: an active layer; 104: an upper waveguide layer; 105: and (5) an upper limiting layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor laser device, which includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer sequentially connected from bottom to top, wherein an electron storage structure is constructed on the lower confinement layer, and is used for realizing regulation and control of carrier distribution of the active layer.
In this embodiment, an electron storage structure is constructed on the lower limiting layer, so as to regulate and control the carrier distribution of the active layer, so that the threshold current can be effectively reduced, the slope efficiency can be improved, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat storage of the active layer can be reduced, the thermal conductivity and heat dissipation can be improved, and the aging light attenuation and focusing light spot resolution of the laser can be improved.
Further, the lower constraint layer includes a first level, a second level, and a third level; the electronic savings structure is constructed by the first, second and third tiers, wherein there are:
the thermal expansion coefficients among the first level, the second level and the third level are distributed in an inverted-type mode;
the elastic coefficients among the first level, the second level and the third level are distributed in an inverted mode;
the lattice constants among the first level, the second level and the third level are distributed in a positive-type.
In this embodiment, the structural designs of the first level, the second level and the third level can be seen in fig. 2 and 3. The lower limiting layer can grow the structures of the first level, the second level and the third level by regulating and controlling the growth means such as the pressure intensity, the material composition (MO source: TMAL, TMGa, TMIn, NH, NH2 and H2 flow), the growth temperature, the growth rate, the rotation speed, the time, the VIII ratio and the like in the growth process, so that the requirements of the inverted distribution of the thermal expansion coefficient, the inverted distribution of the elastic coefficient and the positive distribution of the lattice constant are met, and the construction of the electron storage structure can be completed.
Further, the first level has a thermal expansion coefficient of a, the second level has a thermal expansion coefficient of b, and the third level has a thermal expansion coefficient of c, wherein: b is more than or equal to 2.5 and a is more than or equal to c is more than or equal to 5.5, and the unit is 10 -6 /K。
In this embodiment, the thermal expansion coefficients of the first level, the second level and the third level are set, so that the thermal expansion coefficients of the first level, the second level and the third level in the lower limiting layer are distributed in an inverted-type mode, which can reduce the heat generated by non-radiative recombination loss and free carrier absorption loss, reduce the heat accumulation of the active layer, improve the heat conductivity and heat dissipation, and improve the aging light attenuation and focusing light spot resolution of the laser; values above or below this range do not achieve the technical effect of the present solution.
Further, the elasticity coefficient of the first level is d, the elasticity coefficient of the second level is e, and the elasticity coefficient of the third level is f, wherein: and e is more than or equal to 200 and less than or equal to f is more than or equal to d is more than or equal to 400, and the unit is GPa.
In the embodiment, the elastic coefficients of the first level, the second level and the third level are set, so that the elastic coefficients among the first level, the second level and the third level in the lower limiting layer are distributed in an inverted-type mode, the heat generated by non-radiative recombination loss and free carrier absorption loss can be reduced, the heat accumulation of the active layer is reduced, the heat conductivity and heat dissipation are improved, and the aging light attenuation and the focusing light spot resolution of the laser are improved; values above or below this range do not achieve the technical effect of the present solution.
Further, the lattice constant of the first level is g, the lattice constant of the second level is h, and the elastic coefficient of the third level is i, wherein: and i is more than or equal to 3 and g is more than or equal to h is more than or equal to 4, and the unit is the rice.
In the embodiment, lattice constants of the first level, the second level and the third level are set, so that lattice constants among the first level, the second level and the third level in the lower limiting layer are distributed in a positive-type mode, the regulation and control of the barrier height can be realized, the carrier distribution of the active layer is regulated and controlled, the heat generated by non-radiative recombination loss and free carrier absorption loss is reduced, the threshold current is reduced, and the slope efficiency is improved; the technical effect of the scheme cannot be achieved when the parameter range is higher or lower than the parameter range.
Further, the lower limiting layer is formed by any one or any combination of AlInGaN, alInN, alGaN, inN, alN, inGaN and GaN, and the thickness x of the lower limiting layer meets the following conditions: x is more than or equal to 10 and less than or equal to 90000, and the unit is the Emi, and the specific reference can be seen in FIG. 4.
Further, in the lower confinement layer, there are: the In/Mg element proportion among the first level, the second level and the third level is In positive-type distribution; the Si/Mg element proportion among the first level, the second level and the third level is distributed in a positive type; the Al/Mg element ratio among the first level, the second level and the third level is distributed in a U shape.
In this embodiment, the design of In/Mg element proportion and lattice constant distribution In the lower limiting layer can realize the regulation and control of the barrier height, so as to regulate and control the carrier distribution of the active layer, reduce the heat generated by non-radiative recombination loss and free carrier absorption loss, reduce the threshold current and improve the slope efficiency. Meanwhile, due to the design of the Al/Mg element proportion, the thermal expansion coefficient distribution and the elastic coefficient distribution in the lower limiting layer, the heat generated by non-radiative recombination loss and free carrier absorption loss can be effectively reduced, the heat accumulation of the active layer is reduced, the heat conductivity and the heat dissipation are improved, and the ageing light attenuation and the focusing light spot resolution of the laser are improved.
Further, referring to fig. 5 and 6, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period m is as follows: m is more than or equal to 1 and less than or equal to 3; wherein: the well layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p of the well layer meets the following conditions: p is more than or equal to 10 and less than or equal to 100, and the unit is the aemi; the barrier layer adopts any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q of the barrier layer is as follows: q is more than or equal to 10 and less than or equal to 200, and the unit is the Emi.
Further, referring to fig. 7, the lower waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness y thereof satisfies: y is more than or equal to 10 and less than or equal to 8000, and the unit is Emi; the upper waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness z of the upper waveguide layer is as follows: z is more than or equal to 10 and less than or equal to 8000, and the unit is Emi.
Further, referring to fig. 8, the upper confinement layer is formed by any one or any combination of AlInGaN, alInN, alGaN, inGaN, alN and GaN, and the thickness n thereof satisfies: n is more than or equal to 10 and less than or equal to 80000, and the unit is Emi.
Further, the substrate is any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesia-alumina spinel MgAl2O4, mgO, znO, zrB2, liAlO2 and LiGaO2 composite substrate.
In order to further illustrate the technical features of the present invention and highlight the technical effects, the performance of the semiconductor laser device according to the present invention is compared with that of the conventional laser device, and specific data are shown in table 1.
Table 1 performance comparison data table
As is easy to see from the table, the laser element provided by the invention can reduce the threshold current and improve the slope efficiency, and simultaneously, reduce the heat generated by non-radiative recombination loss and free carrier absorption loss, reduce the heat accumulation of an active layer, improve the heat conductivity and heat dissipation, improve the aging light attenuation and the focusing light spot resolution of the laser, improve the aging light attenuation of 1000H from 22% to within 4%, and reduce the focusing light spot resolution from more than 200nm to less than 40nm.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, and is characterized in that an electron storage structure is constructed on the lower limiting layer and used for realizing regulation and control of carrier distribution of the active layer.
2. The semiconductor laser device as claimed in claim 1, wherein the lower confinement layer includes a first level, a second level, and a third level; the electronic savings structure is constructed by the first, second and third tiers, wherein there are:
the thermal expansion coefficients among the first level, the second level and the third level are distributed in an inverted-type mode;
the elastic coefficients among the first level, the second level and the third level are distributed in an inverted mode;
the lattice constants among the first level, the second level and the third level are distributed in a positive-type.
3. The semiconductor laser device as claimed in claim 2, wherein the first level has a thermal expansion coefficient of a, the second level has a thermal expansion coefficient of b, and the third level has a thermal expansion coefficient of c, wherein: b is more than or equal to 2.5 and a is more than or equal to c is more than or equal to 5.5, and the unit is 10 -6 /K。
4. The semiconductor laser device as claimed in claim 2, wherein the first level has an elastic modulus d, the second level has an elastic modulus e, and the third level has an elastic modulus f, wherein: and e is more than or equal to 200 and less than or equal to f is more than or equal to d is more than or equal to 400, and the unit is GPa.
5. The semiconductor laser device according to claim 2, wherein the first level has a lattice constant g, the second level has a lattice constant h, and the third level has an elastic modulus i, wherein: and i is more than or equal to 3 and g is more than or equal to h is more than or equal to 4, and the unit is the rice.
6. A semiconductor laser device as claimed in any one of claims 1 to 5, wherein the lower confinement layer is formed by any one or any combination of AlInGaN, alInN, alGaN, inN, alN, inGaN and GaN, and has a thickness x that satisfies: x is more than or equal to 10 and less than or equal to 90000, and the unit is Emi.
7. A semiconductor laser device as claimed in any one of claims 1 to 5, wherein in the lower confinement layer, there are:
the In/Mg element proportion among the first level, the second level and the third level is In positive-type distribution;
the Si/Mg element proportion among the first level, the second level and the third level is distributed in a positive type;
the Al/Mg element ratio among the first level, the second level and the third level is distributed in a U shape.
8. The semiconductor laser device according to claim 7, wherein the active layer has a periodic structure consisting of a well layer and a barrier layer, and the period m is as follows: m is more than or equal to 1 and less than or equal to 3; wherein: the well layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p of the well layer meets the following conditions: p is more than or equal to 10 and less than or equal to 100, and the unit is the aemi; the barrier layer adopts any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q of the barrier layer is as follows: q is more than or equal to 10 and less than or equal to 200, and the unit is the Emi.
9. A semiconductor laser device as claimed in claim 7, wherein the lower waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and has a thickness y that satisfies: y is more than or equal to 10 and less than or equal to 8000, and the unit is Emi; the upper waveguide layer is formed by any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness z of the upper waveguide layer is as follows: z is more than or equal to 10 and less than or equal to 8000, and the unit is Emi.
10. The semiconductor laser device as claimed in claim 7, wherein the upper confinement layer is formed by using any one or any combination of AlInGaN, alInN, alGaN, inGaN, alN and GaN, and the thickness n thereof satisfies: n is more than or equal to 10 and less than or equal to 80000, and the unit is Emi.
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| CN202310838491.6A CN116937328A (en) | 2023-07-10 | 2023-07-10 | Semiconductor laser element |
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| CN202310838491.6A CN116937328A (en) | 2023-07-10 | 2023-07-10 | Semiconductor laser element |
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