CN116936671A - Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device - Google Patents
Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device Download PDFInfo
- Publication number
- CN116936671A CN116936671A CN202311175944.8A CN202311175944A CN116936671A CN 116936671 A CN116936671 A CN 116936671A CN 202311175944 A CN202311175944 A CN 202311175944A CN 116936671 A CN116936671 A CN 116936671A
- Authority
- CN
- China
- Prior art keywords
- light
- region
- junction
- layer
- photosensitive device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 claims abstract description 41
- 238000010168 coupling process Methods 0.000 claims abstract description 41
- 238000005859 coupling reaction Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000005286 illumination Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 8
- 238000012576 optical tweezer Methods 0.000 claims description 8
- 238000004720 dielectrophoresis Methods 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The application relates to the field of photoelectric tweezers devices, in particular to a photosensitive device comprising a light-receiving PN junction and an output triode and a photoelectric tweezers formed by the photosensitive device, wherein the photoelectric tweezers comprise a device, the device comprises an upper electrode, a lower electrode, an intermediate medium and a photosensitive layer, and the intermediate medium and the photosensitive layer are arranged between the upper electrode and the lower electrode; preferably, an alternating voltage is applied between the upper electrode and the lower electrode; the light receiving PN junction comprises an N region, a P region of a coupling region and a light absorbing layer; the output triode comprises a collector region, a base region, an emitter region and a metal layer of the coupling region; the application has the beneficial effects that the photosensitive device can keep lower dark state current while having larger photocurrent; the photosensor array can be used as a photosensor layer of the photoelectric tweezers, can ensure low resistivity in illumination and large dark state resistivity at the same time, and provides a better operation effect for the photoelectric tweezers.
Description
Technical Field
The application relates to the field of photoelectric tweezers devices, in particular to a photosensitive device comprising a light-receiving PN junction and an output triode and a photoelectric tweezers formed by the photosensitive device.
Background
The electro-optical tweezer device typically requires that the resistivity of the illuminated region of the photosensitive layer be lower than the resistivity of the intermediate medium. For some low impedance intermediate media, a photosensitive material with lower impedance when illuminated is required, which is a challenge for a single photosensitive material for which a common solution is to use an array of phototransistors as the photosensitive material. Similar to the patent CN10722074B, a phototransistor and a photoelectric tweezer device formed by the same are disclosed, wherein the NPN phototransistor is formed by an N-type collector region, a P-type base region and an N-type emitter region, the base of the phototransistor is suspended, a voltage is applied between the collector and the emitter, the transistor has a very low resistivity when illuminated due to the current gain of the phototransistor, the resistivity can be lower than some low resistivity intermediate medium, so that the voltage drop is mainly over the low impedance intermediate medium, resulting in dielectrophoresis forces to reach the object from the total intermediate medium; unlike a single photoactive material, a transistor without illumination will have current passing through it when electrodes are applied to the emitter and base, and this non-illuminated dark state current will appear as a decrease in the resistivity of the phototransistor as a whole; the dark state current of the phototransistor is related to the current gain, and when the current gain of the phototransistor is large, the light irradiation current and the dark state current of the phototransistor become large at the same time, which is shown as that the light irradiation resistance and the dark state resistance of the phototransistor become low; the operation of the photoelectric tweezers generally requires that the resistivity of a photosensitive layer in illumination is lower than that of an intermediate medium, and the resistivity of an area which is not illuminated is very high, so that the operation can be realized by exciting dielectrophoresis force by an uneven electric field; for the reasons described above, phototransistors are generally unable to guarantee a small dark current while guaranteeing a large optical state current.
As described above, there is a need for a technique that can solve the above-described problems.
Disclosure of Invention
Therefore, the technical problem to be solved by the application is to solve the problem that the phototransistor cannot guarantee a small dark current while guaranteeing a large light state current in the prior art.
The application adopts the technical scheme that the photosensitive device comprising the light-receiving PN junction and the output triode and the photoelectric tweezers formed by the photosensitive device comprise a device, wherein the device comprises an upper electrode, a lower electrode, an intermediate medium and a photosensitive layer, and the intermediate medium and the photosensitive layer are arranged between the upper electrode and the lower electrode.
Preferably, an alternating voltage is applied between the upper electrode and the lower electrode;
the light receiving PN junction comprises an N region, a P region of a coupling region and a light absorbing layer;
the output triode comprises a collector region, a base region, an emitter region and a metal layer of the coupling region;
the coupling area is the coupling area of the light receiving PN junction and the output triode at the same time; the light receiving PN junction and the output triode form an independent photosensitive device, the photosensitive device array in the photosensitive layer is positioned on the supporting layer, each photosensitive device is blocked by the insulating blocking piece, the light receiving PN junction is contacted with the intermediate medium through the light absorbing layer, and the output triode is contacted with the intermediate medium through the metal layer.
Preferably, the metal layer conductively contacts the emitter region of the output transistor with the intermediate medium.
Preferably, the distance between the insulating barriers is 5 um-20 um, the light sensor is isolated by the insulating barriers, and the insulating barriers are made of insulating materials.
Preferably, the thickness of the metal layer is 500 nm-2 um, and the metal layer covers the whole area of the output triode.
Preferably, the supporting layer is an N-type doped semiconductor, the coupling region is an N-type doped semiconductor, the P-region of the coupling region of the light receiving PN junction is a P-type doped semiconductor, the base region of the output transistor is a P-type doped semiconductor, and the emitter region of the output transistor is an N-type doped semiconductor.
Preferably, the thickness of the supporting layer is 3um to 20um.
Preferably, the coupling region comprises a lateral portion and a longitudinal portion, the longitudinal portion of the coupling region being in contact with the light absorbing layer; the longitudinal part width of the light absorbing layer is 200 nm-1 um.
Preferably, the doping of the N type or the P type is opposite to the doping of the N type or the P type.
Preferably, the photoelectric tweezers comprise a first electrode, a medium, an inner photosensitive layer and a second electrode, and voltage is applied between the first electrode and the second electrode; the inner photosensitive layer is composed of a photosensitive device array comprising a light receiving PN junction and an output triode;
the resistivity of the inner photosensitive layer is larger than that of the medium, when the patterned light source is applied to the area of the inner photosensitive layer through the first electrode and the medium, the resistivity of the area is reduced, the resistivity of the area applied with light is smaller than that of the medium, voltage in the light range is applied to the medium, meanwhile, the area of the inner photosensitive layer which is not illuminated remains high in resistivity, uneven electric field is caused by light on the medium, and micro-nano objects in the medium are moved by dielectrophoresis force caused by the uneven electric field.
The beneficial effects of the application are as follows: a photosensitive device comprising a light receiving PN junction and an output triode and a photoelectric tweezers formed by the photosensitive device, wherein the photosensitive device can keep lower dark state current while having larger photocurrent; the photosensor array can be used as a photosensor layer of the photoelectric tweezers, can ensure low resistivity in illumination and large dark state resistivity at the same time, and provides a better operation effect for the photoelectric tweezers.
The current amplifying function and the light absorbing function of the phototriode are decoupled, the light absorption is realized through the photodiode, and the amplifying function is realized by the transistor; compared with the traditional phototriode, the current amplification and the light-dark current can be regulated and controlled relatively independently.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
The technical scheme of the application is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, serve to explain the application. In the drawings:
FIG. 1 is a schematic overall construction of the present application;
FIG. 2 is a schematic diagram of an array of photosensitive devices according to the present application;
FIG. 3 is a schematic diagram of a photosensor array according to the present application;
FIG. 4 is a schematic view of the structure of the electro-optical tweezer device of the present application;
figure 5 is a schematic cross-sectional view of an electro-optical tweezer device of the present application.
In the figure: a first electrode 101; a medium 102; an inner photosensitive layer 103; a second electrode 104; a device 200, an upper electrode 210; a lower electrode 220; an intermediate medium 240; a photosensitive layer 200a; a support layer 201; a coupling region 202; an N region 203; a base region 204; an emitter region 205; an insulating barrier 206; a light absorbing layer 207; a metal layer 208.
Detailed Description
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the application will be rendered by reference to the appended drawings and appended detailed description.
In the description of the present application, it should be understood that the directions or positional relationships indicated by the terms "intermediate," "top," "bottom," "inner," "outer," and the like are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In addition, unless explicitly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like should be construed broadly, as for example, they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The first embodiment is as follows:
as shown in fig. 1-5, a photosensitive device comprising a light receiving PN junction and an output triode and a photoelectric tweezers formed by the photosensitive device, comprising a device 200, wherein the device 200 comprises an upper electrode 210, a lower electrode 220, an intermediate medium 240 and a photosensitive layer 200a, and the intermediate medium 240 and the photosensitive layer 200a are arranged between the upper electrode 210 and the lower electrode 220;
an ac voltage 230 is applied between the upper electrode 210 and the lower electrode 220;
the light receiving PN junction comprises an N region 203, a P region of the coupling region 202 and a light absorbing layer 207;
the output triode comprises a collector region of the coupling region 202, a base region 204, an emitter region 205 and a metal layer 208;
the coupling region 202 is the coupling region of the light receiving PN junction and the output triode at the same time; the light receiving PN junction and the output triode form an independent light sensor, the light sensor array in the light sensing layer 200a is positioned on the supporting layer 201, the light sensors are separated by the insulating barrier 206, the light receiving PN junction is contacted with the intermediate medium 240 through the light absorbing layer 207, and the output triode is contacted with the intermediate medium 240 through the metal layer 208;
the photoelectric tweezers comprise a first electrode 101, a medium 102, an inner photosensitive layer 103 and a second electrode 104, and a voltage 107 is applied between the first electrode 101 and the second electrode 104; the inner photosensitive layer 103 is composed of a photosensitive device array comprising a light receiving PN junction and an output triode;
the resistivity of the inner photosensitive layer 103 is greater than the resistivity of the medium 102, when the patterned light source 105 is applied to the region 106 of the inner photosensitive layer 103 through the first electrode 101 and the medium 102, the resistivity of the region 106 is reduced, the resistivity of the region 106 to which light is applied is less than the resistivity of the medium 102, a voltage in a light range is applied to the medium 102, while the non-illuminated region of the inner photosensitive layer 103 maintains a high resistivity, the light causes an uneven electric field in the medium 102, and dielectrophoresis force caused by the uneven electric field causes the micro-nano objects 108 in the medium 102 to move.
The working principle and beneficial effects of the embodiment are as follows: in the transistor-based electro-optical tweezers technology, the light receiving areas are all NPN/PNP transistors, and at least the collector area, the base area 204 and the emitter area 205 of the coupling area 202, and the "photosensitive device including a light receiving PN junction and an output triode" is used for the electro-optical tweezers, and the light receiving areas in the photosensitive device do not need to be any part of NPN/PNP transistors; by designing the relative positions of the photosensitive layer 200a and the metal layer 208 and the light absorption coefficients and thicknesses of the metal layer 208 and the metal layer 208, it can be ensured that the light receiving area of the photosensitive device has only a PN junction, and any area of the output triode is not directly illuminated, which is significantly different from the collector area, the base area 204 and the emitter area 205 of at least one area coupling area 202 of the prior art phototransistor which are directly illuminated;
in transistor-based electro-optical tweezers technology, the key of utilizing a phototransistor is the current gain characteristic of the phototransistor, which can make its absolute impedance value lower than a specific low-impedance intermediate medium 240 when illuminated; while the non-illuminated devices have a relatively high impedance. However, based on the characteristics of NPN/PNP type, when the amplification factor of the transistor is further increased, although the optical state current is further increased, the dark state current is also obviously increased to the level equivalent to the optical state current, and when the photoelectric transistor is used for photoelectric tweezers, the non-uniform electric field excitation dielectrophoresis force cannot be provided; the application is characterized in that the application can ensure larger light state current and keep low dark state current.
The second embodiment is as follows:
as shown in fig. 1-3, the photosensitive device comprising a light receiving PN junction and an output triode and the photoelectric tweezers formed by the photosensitive device, wherein the P region of the coupling region 202 of the light receiving diode is electrically isolated from the intermediate medium 240 by the light absorbing layer 207, and the material of the light absorbing layer 207 can be silicon oxide; the metal layer 208 may make conductive contact between the emitter region 205 of the output transistor and the intermediate medium 240, and the metal layer 208 may be one of gold, silver, copper, aluminum, or an alloy with different proportions.
And a third specific embodiment:
as shown in fig. 1-3, the distance between the insulating barriers 206 is 5um to 20um, each independent photosensitive device is uniformly or unevenly separated by the insulating barriers 206, the insulating barriers are electrically insulating, and the material of the insulating barriers can be one of silicon oxide, silicon nitride or photoresist.
The specific embodiment IV is as follows:
as shown in fig. 1-3, the thickness of the metal layer 208 is 500nm to 2um, and the metal layer 208 can absorb most photons while almost no photons enter the photosensitive device from the coverage area of the metal layer 208. In some embodiments, the metal layer 208 covers the entire area of the output transistor.
Fifth embodiment:
as shown in fig. 1-3, the photosensitive device comprising the light-receiving PN junction and the output transistor and the optical tweezers formed by the photosensitive device, the light absorbing layer 207 electrically isolates the collector region of the coupling region 202 of the output transistor, the base region 204 and the metal layer 208, so that the metal layer 208 is in conductive contact with only the emitter region 205 of the output transistor.
Specific embodiment six:
as shown in fig. 1-3, the supporting layer 201 is an N-type doped semiconductor, the coupling region 202 is an N-type doped semiconductor, the P-region of the coupling region 202 of the light receiving PN junction is a P-type doped semiconductor, the base region 204 of the output transistor is a P-type doped semiconductor, and the emitter region 205 of the output transistor is an N-type doped semiconductor. The semiconductor may be crystalline silicon; the semiconductor may be one of germanium, gallium arsenide, aluminum gallium arsenide.
Seventh embodiment:
as shown in fig. 1-3, the photosensitive device comprising a light-receiving PN junction and an output triode and the photoelectric tweezers formed by the photosensitive device, the doping agent of the supporting layer 201 can be one element or combination of different proportions of phosphorus, arsenic and antimony, and the doping concentration can be in the range of 1e18-1e20/cm3; the thickness of the support layer 201 may be 3um to 20um.
Eighth embodiment:
as shown in fig. 1-3, the photosensitive device including the light receiving PN junction and the output triode and the photoelectric tweezers formed by the photosensitive device, the doping element of the coupling region 202 can be one element or a combination of different proportions of phosphorus, arsenic and antimony, and the doping concentration can be in the range of 1e14-1e16/cm3. In some embodiments, the coupling region 202 includes a lateral portion and a longitudinal portion, the longitudinal portion of the coupling region 202 being in contact with the light absorbing layer 207; the width of the longitudinal portion of the coupling region 202 is 200nm to 1um, and this portion is referred to as the coupling length of the light-receiving diode and the output transistor.
Detailed description nine:
as shown in fig. 1-3, the photosensitive device comprising a light receiving PN junction and an output triode and the photoelectric tweezers formed by the photosensitive device, wherein the P region of the coupling region 202 of the light receiving PN junction is P-type doped, the doping element can be one or combination of different proportions of boron, gallium and aluminum, and the doping concentration range can be 1e16-1e20/cm3; the P-region width of the coupling region 202 of the light receiving PN junction is 2um to 8um.
The working principle and beneficial effects of the embodiment are as follows:
detailed description ten:
as shown in fig. 1-3, a photosensitive device comprising a light-receiving PN junction and an output triode and a pair of photoelectric tweezers formed by the photosensitive device,
an independent photosensitive device only has one light-receiving PN junction; in some embodiments there may be multiple light-receiving PN junctions, all coupled to the output transistor through the coupling region 202.
Eleventh embodiment:
as shown in fig. 1-3, a photosensitive device comprising a light-receiving PN junction and an output triode and a pair of photoelectric tweezers formed by the photosensitive device,
the base region 204 of the output triode is P-type doped, the doping element can be one or combination of different proportions of boron, gallium and aluminum, and the doping concentration can be 1e14-1e18/cm3.
Twelve specific embodiments:
as shown in fig. 1-3, the photosensitive device comprising a light receiving PN junction and an output triode and the photoelectric tweezers formed by the photosensitive device, the emitting region 205 of the output triode is doped n-type, the doping element can be one element or combination of different proportions of phosphorus, arsenic and antimony, and the doping concentration can be in the range of 1e17-1e21/cm3.
Thirteen specific embodiments:
as shown in fig. 1-3, a photosensitive device comprising a light-receiving PN junction and an output triode and a pair of photoelectric tweezers formed by the photosensitive device,
the emitter region 205 of the output transistor is surrounded by the base region 204, and the base region 204 is surrounded by the collector region of the coupling region 202.
Fourteen specific embodiments:
as shown in fig. 1-3, a photosensitive device comprising a light-receiving PN junction and an output triode and a pair of photoelectric tweezers formed by the photosensitive device,
the N-type or P-type doping may be opposite to the N-type doping, and the device 200 may have the same effect when the P-region of the coupling region 202 of the light receiving PN, the N-region 203 of the light receiving PN junction, the collector region of the coupling region 202, the base region 204, and the emitter region 205 are opposite in polarity.
The above description is not intended to limit the application to the particular embodiments disclosed, but to limit the application to the particular embodiments disclosed, as variations, modifications, additions or substitutions within the spirit and scope of the application as disclosed in the accompanying claims.
Claims (10)
1. The photosensitive device comprising a light receiving PN junction and an output triode is characterized in that: the device (200) comprises an upper electrode (210), a lower electrode (220), an intermediate medium (240) and a photosensitive layer (200 a), wherein the intermediate medium (240) and the photosensitive layer (200 a) are arranged between the upper electrode (210) and the lower electrode (220).
2. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 1, wherein: an alternating voltage (230) is applied between the upper electrode (210) and the lower electrode (220);
the light receiving PN junction comprises an N region (203), a P region of a coupling region (202) and a light absorbing layer (207);
the output triode comprises a collector region, a base region (204), an emitter region (205) and a metal layer (208) of the coupling region (202);
the coupling area (202) is a coupling area of the light receiving PN junction and the output triode at the same time; the light receiving PN junction and the output triode form an independent light sensor, the light sensor array in the light sensor layer (200 a) is positioned on the supporting layer (201), each light sensor is blocked by the insulating blocking piece (206), the light receiving PN junction is contacted with the intermediate medium (240) through the light absorbing layer (207), and the output triode is contacted with the intermediate medium (240) through the metal layer (208).
3. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 2, wherein: the light absorption layer (207) electrically insulates the P region of the light receiving PN junction coupling region (202) from the intermediate medium (240); the metal layer (208) conductively contacts the emitter region (205) of the output transistor with the intermediate medium (240).
4. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 2, wherein: the distance between the insulating barriers (206) is 5 um-20 um, the light sensors are isolated by the insulating barriers (206), and the insulating barriers (206) are made of insulating materials.
5. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 2, wherein: the thickness of the metal layer (208) is 500 nm-2 um, and the metal layer (208) covers the whole area of the output triode.
6. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 2, wherein: the supporting layer (201) is an N-type doped semiconductor, the coupling region (202) is an N-type doped semiconductor, the P region of the coupling region (202) of the light receiving PN junction is a P-type doped semiconductor, the base region (204) of the output triode is a P-type doped semiconductor, and the emitting region (205) of the output triode is an N-type doped semiconductor.
7. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 6, wherein: the thickness of the supporting layer (201) is 3 um-20 um.
8. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 6, wherein: the coupling region (202) comprises a transverse portion and a longitudinal portion, the longitudinal portion of the coupling region (202) being in contact with the light absorbing layer (207); the longitudinal part width of the light absorbing layer (207) is 200 nm-1 um.
9. The photosensitive device comprising a light-receiving PN junction and an output transistor of claim 6, wherein: the doping of the N type or the P type is opposite to the doping of the N type or the P type.
10. An optical tweezers comprising a photosensitive device comprising a light receiving PN junction and an output transistor, suitable for use in a photosensitive device comprising a light receiving PN junction and an output transistor as claimed in any one of claims 1 to 9, characterized in that: the photoelectric tweezers comprise a first electrode (101), a medium (102), an inner photosensitive layer (103) and a second electrode (104), wherein a voltage (107) is applied between the first electrode (101) and the second electrode (104); the inner photosensitive layer (103) is composed of a photosensitive device array comprising a light receiving PN junction and an output triode;
the resistivity of the inner photosensitive layer (103) is larger than the resistivity of the medium (102), when the patterned light source (105) is applied to the region (106) of the inner photosensitive layer (103) through the first electrode (101) and the medium (102), the resistivity of the region (106) is reduced, the resistivity of the region (106) to which the illumination is applied is smaller than the resistivity of the medium (102), the voltage in the illumination range is applied to the medium (102), and meanwhile, the non-illuminated region of the inner photosensitive layer (103) keeps high resistivity, the illumination causes an uneven electric field on the medium (102), and the dielectrophoresis force caused by the uneven electric field causes the micro-nano objects (108) in the medium (102) to move.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311175944.8A CN116936671B (en) | 2023-09-13 | 2023-09-13 | Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311175944.8A CN116936671B (en) | 2023-09-13 | 2023-09-13 | Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116936671A true CN116936671A (en) | 2023-10-24 |
| CN116936671B CN116936671B (en) | 2023-12-05 |
Family
ID=88375625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311175944.8A Active CN116936671B (en) | 2023-09-13 | 2023-09-13 | Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116936671B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044531A (en) * | 1989-01-28 | 1990-08-08 | 武汉大学 | Photoelectric detector with internal modulation and indirect coupling |
| CN1137840A (en) * | 1994-10-24 | 1996-12-11 | 中田仗祐 | Light receiving element, light receiving element array and electrolyzer using them |
| US6348367B1 (en) * | 1993-12-02 | 2002-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| CN105658781A (en) * | 2013-10-22 | 2016-06-08 | 伯克利照明有限公司 | Microfluidic devices having isolation pens and methods of testing biological micro-objects with same |
| WO2018191539A1 (en) * | 2017-04-13 | 2018-10-18 | Artilux Corporation | Germanium-silicon light sensing apparatus ii |
-
2023
- 2023-09-13 CN CN202311175944.8A patent/CN116936671B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044531A (en) * | 1989-01-28 | 1990-08-08 | 武汉大学 | Photoelectric detector with internal modulation and indirect coupling |
| US6348367B1 (en) * | 1993-12-02 | 2002-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| CN1137840A (en) * | 1994-10-24 | 1996-12-11 | 中田仗祐 | Light receiving element, light receiving element array and electrolyzer using them |
| CN105658781A (en) * | 2013-10-22 | 2016-06-08 | 伯克利照明有限公司 | Microfluidic devices having isolation pens and methods of testing biological micro-objects with same |
| WO2018191539A1 (en) * | 2017-04-13 | 2018-10-18 | Artilux Corporation | Germanium-silicon light sensing apparatus ii |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116936671B (en) | 2023-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11888003B2 (en) | Photodetector | |
| US7875890B1 (en) | Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays | |
| KR101627684B1 (en) | Intergrated photodiode for semiconductor substrates | |
| TWI482298B (en) | Semiconductor photodetection element | |
| JPH0728049B2 (en) | Graded Gap Inversion Layer Photodiode Array | |
| JP2010536165A (en) | Avalanche photodiode | |
| JPH11112006A (en) | Photoelectric conversion device and contact-type image sensor | |
| US8212327B2 (en) | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme | |
| JP3912024B2 (en) | PIN type lateral type semiconductor photo detector | |
| US20080277749A1 (en) | Light-Sensitive Component with Increased Blue Sensitivity, Method for the Production Thereof, and Operating Method | |
| JP2662062B2 (en) | Photoelectric conversion device | |
| US20140159180A1 (en) | Semiconductor resistor structure and semiconductor photomultiplier device | |
| WO1993021660A1 (en) | Low capacitance x-ray radiation detector | |
| US5223919A (en) | Photosensitive device suitable for high voltage operation | |
| CN116936671B (en) | Photosensitive device comprising light-receiving PN junction and output triode and photoelectric tweezers formed by photosensitive device | |
| KR970004850B1 (en) | Semiconductor device for light position detector | |
| CN213583789U (en) | Integrated photoelectric sensor | |
| US20040036146A1 (en) | Phototransistor device with fully depleted base region | |
| EP1833095B1 (en) | Photo diode having reduced dark current | |
| CA1039839A (en) | Space-charge-limited phototransistor | |
| US4717946A (en) | Thin line junction photodiode | |
| EP0280368B1 (en) | A photosensitive device | |
| CN211980629U (en) | Semiconductor device and photodetection system | |
| RU2185689C2 (en) | Avalanche photodetector (versions) | |
| CN213366613U (en) | Current amplifier and single photon detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |