CN116884666A - Target system and preparation method thereof - Google Patents
Target system and preparation method thereof Download PDFInfo
- Publication number
- CN116884666A CN116884666A CN202310860822.6A CN202310860822A CN116884666A CN 116884666 A CN116884666 A CN 116884666A CN 202310860822 A CN202310860822 A CN 202310860822A CN 116884666 A CN116884666 A CN 116884666A
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- Prior art keywords
- target system
- layer
- hydrogen diffusion
- honeycomb structure
- diffusion layer
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 25
- 239000010949 copper Substances 0.000 claims abstract description 25
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 18
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 8
- 239000000463 material Substances 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 13
- 238000000149 argon plasma sintering Methods 0.000 claims description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 238000007731 hot pressing Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 3
- 229910000756 V alloy Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 150000002431 hydrogen Chemical class 0.000 description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 201000011510 cancer Diseases 0.000 description 3
- 238000013532 laser treatment Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002560 therapeutic procedure Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
- C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
- C23C24/106—Coating with metal alloys or metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/08—Holders for targets or for other objects to be irradiated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a target system and a preparation method thereof, the target system comprises a copper substrate, the upper surface of the copper substrate is of a honeycomb structure, a plurality of diversion holes are arranged at the juncture between adjacent through holes in the honeycomb structure, a hydrogen diffusion layer, a lithium layer and an oxidation relieving layer are sequentially arranged in each through hole from bottom to top, the service life of the target is long, and the preparation method is simple.
Description
Technical Field
The invention belongs to the technical field of cores, and relates to a target system and a preparation method thereof.
Background
The accelerator-driven boron neutron capture therapy provides a new approach for the accurate treatment of malignant tumors. The main object of accelerator-based boron neutron capture therapy systems is to provide a compact neutron source that meets the requirements of cancer treatment. Ideally, a neutron source for cancer treatment should produce a single energy neutron beam with an energy of about 10 keV. The single energy neutron beam may be based on 7 Li(p，n) 7 Be reaction. However, mechanical, chemical and thermal properties of lithium metal face certain challenges when applied to a target, especially in the use process of the existing lithium target, protons and lithium are subjected to nuclear reaction, hydrogen, helium and the like are generated at the same time of generating neutrons, and bubbling or peeling of a target material is caused by the generation of hydrogen, helium and the like, so that the hydrogen diffusion is generally guided by arranging a hydrogen diffusion layer in the prior art, but the hydrogen diffusion speed is slower, bubbling is easy to form, and the service life of the lithium target is seriously influenced.
Disclosure of Invention
The object of the present invention is to overcome the drawbacks of the prior art described above and to provide a target system and a method for its preparation, which target has a longer service life and a simple preparation method.
In order to achieve the above purpose, the invention discloses a target system, which comprises a copper substrate, wherein the upper surface of the copper substrate is of a honeycomb structure, a plurality of diversion holes are arranged at the junctions between adjacent through holes in the honeycomb structure, and a hydrogen diffusion layer, a lithium layer and an oxidation relieving layer are sequentially arranged in each through hole from bottom to top.
The cross section of the through hole is of an n-sided structure, wherein n is more than or equal to 3.
The flow guide holes are round holes, round-like holes or polygons.
The copper content in the hydrogen diffusion layer gradually decreases from top to bottom.
The aperture of the diversion hole is micro-scale or nano-scale.
The preparation method of the target system comprises the following steps:
1) Preparing a honeycomb structure and a diversion hole on a copper substrate;
2) Preparing a hydrogen diffusion layer by layer in the through holes in the honeycomb structure by adopting a laser sintering mode;
3) And preparing a lithium layer and an oxidation relieving layer to obtain the target system.
The specific process for preparing the hydrogen diffusion layer by layer in the through holes of the honeycomb structure by adopting a laser sintering mode is as follows:
and performing laser sintering, wherein the laser power of the previous sintering is larger than that of the next sintering so as to form a hydrogen diffusion layer, wherein the content of copper in the hydrogen diffusion layer is gradually reduced from top to bottom, the content of additive materials is gradually increased, and then, a plurality of layers of additive materials are injected into through holes in the honeycomb structure in a vapor deposition or sputtering coating or vacuum hot pressing mode.
The additive material is tantalum, vanadium, tantalum alloy or vanadium alloy.
When the additive material is tantalum powder, laser power C during laser sintering of the front layer t ＝200W+20W*(5-C C ) Wherein C C The number of layers for sintering.
And evaporating or hot-pressing a lithium layer on the surface of the hydrogen diffusion layer.
The invention has the following beneficial effects:
when the target system and the preparation method thereof are specifically operated, the upper surface of the copper substrate is of a honeycomb structure, a plurality of guide holes are arranged at the junctions between adjacent through holes in the honeycomb structure, and when nuclear reaction occurs in the lithium target to release hydrogen, the hydrogen can enter the guide holes, so that the hydrogen is accelerated to be led out, and meanwhile, part of the hydrogen can be temporarily stored by the guide holes, so that the diffusion speed of the hydrogen is improved, and the service life of the lithium target is prolonged. In addition, during preparation, the combination of laser treatment and laser sintering is adopted, so that the preparation method is simple and easy to realize.
Drawings
FIG. 1 is a block diagram of the present invention;
fig. 2 is a structural view of the through hole.
Detailed Description
In order to make the present invention better understood by those skilled in the art, the following description will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments, but not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
In the accompanying drawings, there is shown a schematic structural diagram in accordance with a disclosed embodiment of the invention. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and their relative sizes, positional relationships shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
Referring to fig. 1 and 2, the target system of the present invention includes a copper substrate, wherein the upper surface of the copper substrate is in a honeycomb structure, a plurality of diversion holes are arranged at the junctions between adjacent through holes in the honeycomb structure, and a hydrogen diffusion layer, a lithium layer and an oxidation relieving layer are sequentially arranged in each through hole from bottom to top.
In this embodiment, the cross section of the through hole is an n-sided structure, where n is greater than or equal to 3, and the side length of the n-sided structure is several micrometers to thousands of micrometers.
In this embodiment, the flow guiding hole is a round hole, a quasi-round hole or a polygon, and the aperture of the flow guiding hole is micro-scale or nano-scale, and when the lithium target is subjected to nuclear reaction to release hydrogen during working, the hydrogen can enter the flow guiding hole.
In this embodiment, the material of the hydrogen diffusion layer is copper and an additive material, where the additive material is a material with high hydrogen storage and high hydrogen diffusion rate, such as tantalum, vanadium, tantalum alloy, or vanadium alloy.
In this example, the copper content in the hydrogen diffusion layer gradually decreases from top to bottom, and the content of the additive gradually increases.
The processing method of the target system comprises the following steps:
1) Carrying out laser treatment on the surface of a copper substrate in an argon atmosphere to improve the surface roughness of the copper substrate, removing residual pollutants such as powder on the surface of the copper substrate through ultrasonic cleaning, carrying out laser treatment on the copper substrate, and preparing the honeycomb structure and the diversion holes on the copper substrate;
2) And performing laser sintering, wherein the laser power of the previous sintering is larger than that of the next sintering so as to form a hydrogen diffusion layer, wherein the content of copper in the hydrogen diffusion layer is gradually reduced from top to bottom, the content of additive materials is gradually increased, and then, a plurality of layers of additive materials are injected into through holes in the honeycomb structure in a vapor deposition or sputtering coating or vacuum hot pressing mode.
For example, a layer of hydrogen diffusion layer powder such as tantalum is firstly laid, then laser sintering is carried out, a layer of tantalum powder is laid, then laser sintering is carried out, as the number of layers of tantalum to be printed and sintered is gradually increased, the laser power is gradually reduced, the ratio of the atomic number of copper to the atomic number of tantalum is gradually reduced, after the number of layers of tantalum to be sintered exceeds 5, the content of copper is very low, and the laser power C during laser sintering of the current layer can be ignored through a large number of experiments t ＝200W+20W*(5-C C ) Wherein C C The number of layers for sintering.
3) And evaporating a lithium layer on the surface of the hydrogen diffusion layer, and then manufacturing an oxidation relieving layer.
In order to alleviate lithium oxidation, a metal or metal compound coating layer such as TiN, ti, nb may be prepared by vacuum diffusion welding, plating, etc. as an oxidation alleviation layer to alleviate lithium oxidation.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is intended to be covered by the claims.
Claims (10)
1. The target system is characterized by comprising a copper substrate, wherein the upper surface of the copper substrate is of a honeycomb structure, a plurality of diversion holes are formed at the junctions between adjacent through holes in the honeycomb structure, and a hydrogen diffusion layer, a lithium layer and an oxidation relieving layer are sequentially arranged in each through hole from bottom to top.
2. The target system of claim 1, wherein the cross-section of the through-hole is of n-sided polygonal configuration, wherein n is 3 or more.
3. The target system of claim 1, wherein the baffle aperture is a circular aperture, a round-like aperture, or a polygon.
4. The target system of claim 1, wherein the copper content in the hydrogen diffusion layer decreases gradually from top to bottom.
5. The target system of claim 1, wherein the flow directing pores have a diameter on the order of microns or nanometers.
6. A method of preparing the target system of claim 1, comprising the steps of:
1) Preparing a honeycomb structure and a diversion hole on a copper substrate;
2) Preparing a hydrogen diffusion layer by layer in the through holes in the honeycomb structure by adopting a laser sintering mode;
3) And preparing a lithium layer and an oxidation relieving layer to obtain the target system.
7. The method for preparing a target system according to claim 6, wherein the specific process of preparing the hydrogen diffusion layer by layer in the through holes of the honeycomb structure by adopting a laser sintering mode is as follows:
and performing laser sintering, wherein the laser power of the previous sintering is larger than that of the next sintering so as to form a hydrogen diffusion layer, wherein the content of copper in the hydrogen diffusion layer is gradually reduced from top to bottom, the content of additive materials is gradually increased, and then, a plurality of layers of additive materials are injected into through holes in the honeycomb structure in a vapor deposition or sputtering coating or vacuum hot pressing mode.
8. The method of claim 7, wherein the additive material is tantalum, vanadium, a tantalum alloy, or a vanadium alloy.
9. The method of manufacturing a target system according to claim 7, wherein when the additive material is tantalum powder, laser power C at the time of laser sintering of the front layer t ＝200W+20W*(5-C C ) Wherein C C The number of layers for sintering.
10. The method of claim 6, wherein the hydrogen diffusion layer is a vapor deposited or hot pressed lithium layer on the surface of the target system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310860822.6A CN116884666A (en) | 2023-07-13 | 2023-07-13 | Target system and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310860822.6A CN116884666A (en) | 2023-07-13 | 2023-07-13 | Target system and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116884666A true CN116884666A (en) | 2023-10-13 |
Family
ID=88269344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310860822.6A Pending CN116884666A (en) | 2023-07-13 | 2023-07-13 | Target system and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116884666A (en) |
-
2023
- 2023-07-13 CN CN202310860822.6A patent/CN116884666A/en active Pending
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240306 Address after: Room 135, Block A, Building 2, No. 63 Jiuhuan Road, Shangcheng District, Hangzhou City, Zhejiang Province, 310020 Applicant after: Huaboron Neutron Technology (Hangzhou) Co.,Ltd. Country or region after: China Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Applicant before: XI'AN JIAOTONG University Country or region before: China |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Sheng Inventor after: Wang Jie Inventor after: Yang Yifan Inventor after: Hu Zeming Inventor after: Wu Tao Inventor after: Sun Qiuyu Inventor after: Si Qingyu Inventor before: Wang Jie Inventor before: Yang Yifan Inventor before: Wang Sheng Inventor before: Hu Zeming Inventor before: Wu Tao Inventor before: Sun Qiuyu Inventor before: Si Qingyu |