CN116873935A - Preparation method for preparing high-quality silicon based on industrial silicon - Google Patents
Preparation method for preparing high-quality silicon based on industrial silicon Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 134
- 239000010703 silicon Substances 0.000 title claims abstract description 134
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000654 additive Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000004321 preservation Methods 0.000 claims abstract description 19
- 239000002893 slag Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000007670 refining Methods 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 54
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 46
- 239000002253 acid Substances 0.000 claims description 42
- 230000000996 additive effect Effects 0.000 claims description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 229940043430 calcium compound Drugs 0.000 claims description 6
- 150000001674 calcium compounds Chemical class 0.000 claims description 6
- 150000002681 magnesium compounds Chemical class 0.000 claims description 6
- 150000003388 sodium compounds Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 230000005674 electromagnetic induction Effects 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 9
- 238000007711 solidification Methods 0.000 abstract description 8
- 230000008023 solidification Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000005266 casting Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 24
- 239000012535 impurity Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 239000000178 monomer Substances 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 5
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 4
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000011782 vitamin Substances 0.000 description 1
- 229940088594 vitamin Drugs 0.000 description 1
- 229930003231 vitamin Natural products 0.000 description 1
- 235000013343 vitamin Nutrition 0.000 description 1
- 150000003722 vitamin derivatives Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides a preparation method for preparing high-quality silicon based on industrial silicon, and belongs to the technical field of crystal silicon purification. The method comprises the following specific steps: firstly crushing industrial silicon, mixing the crushed industrial silicon with additives, then loading the mixture into a directional solidification device, heating and melting the mixture, preserving the heat, and finally carrying out directional ingot casting after the heat preservation is finished, thereby finally realizing the preparation of high-quality silicon. The method realizes the preparation of industrial silicon to high-quality silicon by a one-step method, realizes the simultaneous implementation of slag refining and directional solidification, greatly reduces the production cost, and has simple and safe process; and the method has the advantages of low investment, simple equipment, simple operation, suitability for large-scale production and the like, and is very suitable for large-scale industrialization requirements.
Description
Technical Field
The invention belongs to the technical field of crystal silicon purification, and particularly relates to a preparation method for preparing high-quality silicon based on industrial silicon.
Background
Organosilicon is known as an "industrial vitamin" and a "technological catalyst". The research report of the China fluorosilicone organic materials industry association is that: the organic silicon industry plays an important role in the development of national economy in China, and especially the organic silicon monomer is a raw material for preparing new chemical materials such as silicone oil, silicone rubber, silicone resin, silane coupling agent and the like. Methyl chlorosilane is the most main organic silicon monomer, the dosage of the methyl chlorosilane accounts for more than 90 percent of the total monomer, so far, the process for producing the methyl chlorosilane in China mainly depends on self-research and development, but the process is not thoroughly researched in China due to technical reasons, and especially the indexes of silicon powder as raw materials are clear and the selectivity of the dimethyl dichlorosilane is not high. Industrial production practice shows that the smelting process of industrial silicon is optimized, the quality of silicon is improved, and the selectivity of dimethyl dichlorosilane in the synthesis reaction process can be greatly improved, so that high-quality industrial silicon powder is required for the synthesis of organosilicon monomers. At present, the content of Fe, al, ca, mg and other elements in industrial silicon for synthesizing organosilicon monomers in China far exceeds foreign standards, which also has adverse effects on exploring the production process of methylchlorosilane. Effective measures are needed to study the influence of silicon powder quality on the yield of dimethyl dichlorosilane, and the long-term development of the organosilicon monomer industry is promoted.
The current method for producing high-quality silicon (purity is 99.9% -99.999%, 3N-5N) mainly adopts a method of removing impurities easy to oxidize in silicon by slag refining, and then removing the residual impurities by directional solidification and vacuum refining. However, the method has complex process and high energy consumption, and finally causes high cost and resource waste.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a preparation method for preparing high-quality silicon based on industrial silicon, which takes industrial silicon or alien silicon (purity is 90% -99.9%) as a raw material, adopts a low-cost metallurgical method (slag refining and directional solidification are cooperatively carried out) to prepare high-quality silicon with high purity, removes easily oxidized impurities in the industrial silicon by a slag refining mode, and simultaneously can effectively remove metal impurities in the industrial silicon by a directional solidification method, so that the metal impurities and non-metal impurities in the industrial silicon are removed at one time by a mode of cooperatively carrying out slag refining and directional solidification, and the purity of the silicon is 3N-5N (99.9% -99.999%).
The invention relates to a preparation method for preparing high-quality silicon based on industrial silicon, which comprises the following steps:
(1) Crushing industrial silicon;
(2) Pickling the crushed industrial silicon, and then adding an additive to mix to obtain a mixed material;
(3) Heating and preserving the temperature of the mixed materials;
(4) Directly performing directional cooling after heat preservation to obtain an ingot;
(5) Separating silicon and silicon slag in the cast ingot, cleaning the surface of the silicon, and drying to obtain high-quality silicon;
the grain diameter of the crushed materials in the step (1) is not more than 1cm;
the acid adopted in the step (2) is one or more of hydrochloric acid, nitric acid and hydrofluoric acid, wherein the mass fraction of the hydrochloric acid is 2-20%, and the nitric acid and the hydrofluoric acid are concentrated nitric acid and concentrated hydrofluoric acid;
the addition of the additive in step (2) includes two ways: the additive is a compound or the additive is Al 2 O 3 And SiO 2 One or two of the following compounds in percentage by mass: al (Al) 2 O 3 ：1～30％，SiO 2 : 1-20%, and the balance being compound; the compound is a calcium compound, or one or two of a sodium compound and a magnesium compound, and the mass ratio of the calcium compound, the sodium compound and the magnesium compound is 100: (1-50): (1-50); the calcium compound comprises the following components in parts by mass: caO 1-100%, caCO 3 0～99％，CaCl 2 0～30％，CaF 2 0-15%; the sodium compound comprises Na 2 CO 3 At least one of NaCl and NaF; the magnesium compound comprises MgO, mgCO 3 And MgCl 2 At least one of (a) and (b);
the mass ratio of the industrial silicon to the additive in the step (2) is 100: (5-50);
the heating in the step (2) is carried out in a crucible, wherein the crucible is a quartz crucible or a graphite crucible;
the heating mode in the step (3) is electromagnetic induction heating, resistance heating or the combination of the two modes;
the heating in the step (3) is performed in an ingot furnace; the heating temperature is 1450-1700 ℃, and the heat preservation time is 0.5-12 h; during heat preservation, refining is carried out by one or two of electromagnetic stirring and gas stirring, and the gas blown by the gas stirring is argon, chlorine, water vapor, CO and CO 2 One or more of the following;
the heating in the step (3) is carried out under normal pressure or under the protection of argon;
the directional cooling in the step (4) is carried out by adopting a polycrystalline furnace, and the directional cooling speed is 0.3-3 mm/min;
the separation in the step (1) and the step (5) is carried out by adopting a tungsten hammer or a metal tungsten tool;
in the step (5), mixed acid is adopted for cleaning, the mixed acid is hydrochloric acid and concentrated hydrofluoric acid, the concentration of the hydrochloric acid is 2-20%, and the mass ratio of the hydrochloric acid to the concentrated hydrofluoric acid is (1-10): 1, cleaning times are 1-2 times;
compared with the prior art, the invention has the beneficial effects that:
1. the method for removing metal impurities and nonmetallic impurities in the industrial silicon at one time by cooperating with slag-making refining and directional solidification shortens the flow of the traditional process, realizes the one-time removal of various impurities in the industrial silicon, saves resources, reduces energy consumption and realizes the one-step preparation of high-purity silicon by the industrial silicon.
2. The invention adopts a one-step method to realize the preparation from industrial silicon to high-quality silicon, realizes the simultaneous implementation of slag refining and directional solidification, greatly reduces the production cost, and has simple and safe process;
3. the invention has the advantages of low investment, simple equipment, simple operation, suitability for large-scale production and the like, and is very suitable for large-scale industrialization requirements.
Drawings
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
The industrial silicon adopted by the invention comprises commercial industrial silicon or equal external silicon, and the purity is 90-99.9%.
Example 1
(1) Crushing the external silicon (purity is 90%) by a tungsten hammer, wherein the particle size is smaller than 1cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: 20wt.% hydrochloric acid
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:5, a step of; the additive is 50wt.% CaO and 30wt.% Al 2 O 3 And 20wt.% SiO 2 ；
(4) Heating the mixed materials in the step (3) into a crucible to be refined to 1700 ℃, and preserving the temperature for 0.5h at 1700 ℃, wherein the process is carried out under normal pressure, and argon is introduced into the crucible to be stirred in the process of preserving the temperature;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 0.3mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and then cleaning for 2 times by using mixed acid, wherein the mass ratio of hydrochloric acid to concentrated hydrofluoric acid is 2 wt.%: 1, after drying, high quality silicon with a purity of 99.999% was obtained by ICP measurement. The process flow diagram is shown in figure 1.
Example 2
(1) Crushing the external silicon (purity is 97.5%) by a tungsten hammer, wherein the particle size is less than 0.5cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: hydrochloric acid with mass ratio of 2 percent: concentrated hydrofluoric acid = 10:1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:50; the additive is 40wt.% CaO and 10wt.% Al 2 O 3 And 10wt.% SiO 2 ，5％CaCO 3 ,10wt.％Na 2 CO 3 ,20wt.％NaF,5wt.％MgO；
(4) Heating the mixed materials in the step (3) into a crucible to 1650 ℃ for refining, and preserving the temperature at 1650 ℃ for 2.5 hours under the protection of argon, and introducing argon for stirring in the process of preserving the temperature;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 0.5mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and cleaning for 1 time by using mixed acid, wherein the mass ratio of the mixed acid to the concentrated hydrofluoric acid is 1, and the mass ratio of the hydrochloric acid to the concentrated hydrofluoric acid is 20 wt%: 1, after drying, high-quality silicon with purity of 99.994% is obtained by ICP measurement.
Example 3
(1) Crushing the external silicon (purity is 98.1%) by a tungsten hammer, wherein the particle size is smaller than 0.5cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: concentrated nitric acid by mass ratio: concentrated hydrofluoric acid=1: 1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:40, a step of performing a; the additive is 50wt.% CaO,10% CaF 2 ,10wt.％SiO 2 ，5wt.％CaCO 3 ,10wt.％Na 2 CO 3 ,5wt.％MgO,10wt.％MgCl 2 ；
(4) Heating the mixed materials in the step (3) into a crucible to be refined to 1620 ℃, and preserving the temperature at 1620 ℃ for 5 hours, wherein the process is carried out under normal pressure, and chlorine is introduced into the crucible to be stirred in the process of preserving the temperature;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 1mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and cleaning for 1 time by using mixed acid, wherein the mass ratio of the mixed acid to the concentrated hydrofluoric acid is (15 wt.%) 6:1, after drying, high quality silicon with a purity of 99.92% was obtained by ICP measurement.
Example 4
(1) Crushing industrial silicon (purity is 98.5%) with tungsten hammer, and particle size is smaller than 1cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: hydrochloric acid with mass ratio of 20 percent: concentrated hydrofluoric acid=3: 1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:20, a step of; the additive is 1wt.% CaO,64wt.% CaCO 3 ，10wt.％Al 2 O 3 ，10wt.％SiO 2 ，10％Na 2 CO 3 ，5％MgO；
(4) Heating the mixed materials in the step (3) into a crucible to be refined to 1550 ℃, and preserving the heat for 8 hours at 1550 ℃, wherein the process is carried out under the protection of argon, and water vapor is introduced to stir in the heat preservation process;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 3mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and then cleaning for 2 times by using mixed acid, wherein the mass ratio of 10wt.% hydrochloric acid to concentrated hydrofluoric acid is 9:1, after drying, high-quality silicon with purity of 99.9% is obtained by ICP measurement.
Example 5
(1) Crushing with tungsten hammer industrial silicon (purity is 99.7%), and particle size is smaller than 0.6cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: hydrochloric acid with mass ratio of 5 percent: concentrated nitric acid: concentrated hydrofluoric acid = 2:3:1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:35; the additive is 90wt.% CaO and 10wt.% NaF;
(4) Heating the mixed materials in the step (3) into a crucible to be refined at 1450 ℃, and preserving the heat for 12 hours at 1450 ℃, wherein the process is carried out under normal pressure, and CO gas is introduced and stirred in the heat preservation process;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 1.5mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and then cleaning for 2 times by using mixed acid, wherein the mass ratio of 5wt.% hydrochloric acid to concentrated hydrofluoric acid is 7:1, after drying, high-quality silicon with purity of 99.99% is obtained by ICP measurement.
Example 6
(1) Crushing the external silicon (purity is 99.9%) by a tungsten hammer, wherein the grain diameter is less than 0.3cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: hydrochloric acid with mass ratio of 15 percent: concentrated hydrofluoric acid = 5:1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:10; the additive is CaO;
(4) Heating the mixed materials in the step (3) into a crucible to be refined to 1600 ℃, and preserving heat for 7 hours at 1600 ℃, wherein the process is carried out under normal pressure, and argon is introduced into the crucible to be stirred in the heat preservation process;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 2.5mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and then cleaning for 2 times by using mixed acid, wherein the mass ratio of the mixed acid to the concentrated hydrofluoric acid is 7, and the mass ratio of the hydrochloric acid to the concentrated hydrofluoric acid is 20 wt%: 1, after drying, high-quality silicon with purity of 99.98% is obtained by ICP measurement.
Example 7
(1) Crushing industrial silicon (purity is 99.3%) by a tungsten hammer, wherein the grain diameter is less than 0.7cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: concentrated nitric acid by mass ratio: concentrated hydrofluoric acid = 5:1
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:25, a step of selecting a specific type of material; the additive is 30wt.% CaO,10wt.% CaCO 3 ，5wt.％CaCl 2 ，5wt.％CaF 2 ，5wt.％Al 2 O 3 ，10wt.％SiO 2 ，10wt.％Na 2 CO 3 ，5wt.％NaCl，5wt.％NaF，5wt.％MgO,5wt.％MgCO 3 ，5wt.％MgCl 2 ；
(4) Heating the mixed materials in the step (3) into a crucible to 1500 ℃ for refining, and preserving heat at 1500 ℃ for 10 hours, wherein the process is carried out under the protection of argon, and CO is introduced in the heat preservation process 2 Stirring the gas;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 1.5mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and cleaning for 1 time by using mixed acid, wherein the mass ratio of 8wt.% hydrochloric acid to concentrated hydrofluoric acid is 10:1, after drying, high-quality silicon with purity of 99.993% is obtained by ICP measurement.
Example 8
(1) Crushing industrial silicon (purity is 98.9%) by using a tungsten hammer, wherein the particle size is smaller than 0.4cm;
(2) And (3) carrying out acid washing on the industrial silicon obtained after crushing in the step (1), wherein the acid washing conditions are as follows: 10wt.% hydrochloric acid
(3) Mixing the industrial silicon after the acid washing in the step (2) with an additive, wherein the mass of the industrial silicon is as follows: additive mass = 100:45; the additive is 70wt.% CaO,15% Na 2 CO 3 ,10％MgO,5％MgCO 3 ；
(4) Heating the mixed material in the step (3) into a crucible to be refined to 1530 ℃, and preserving heat for 6 hours at 1530 ℃, wherein the process is carried out under the protection of argon, and argon and CO gas are introduced in the process of preserving heat and stirring;
(5) After the heat preservation in the step (4) is finished, directly performing directional cooling to room temperature, wherein the cooling rate is 2mm/min;
(6) Separating silicon from silicon slag in the cast ingot by using a tungsten hammer, and cleaning for 1 time by using mixed acid, wherein the mass ratio of the mixed acid to the concentrated hydrofluoric acid is 10, and the mass ratio of the hydrochloric acid to the concentrated hydrofluoric acid is 20 wt%: 1, after drying, high quality silicon with a purity of 99.97% was obtained by ICP measurement.
Claims (10)
1. The preparation method for preparing high-quality silicon based on industrial silicon is characterized by comprising the following steps of:
(1) Crushing industrial silicon;
(2) Pickling the crushed industrial silicon, and then adding an additive to mix to obtain a mixed material;
(3) Heating and preserving the temperature of the mixed materials;
(4) Directly performing directional cooling after heat preservation to obtain an ingot;
(5) And separating silicon and silicon slag in the cast ingot, cleaning the surface of the silicon, and drying to obtain high-quality silicon.
2. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the industrial silicon after crushing in step (1) has a particle diameter of not more than 1cm.
3. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the acid used in the step (2) is one or more of hydrochloric acid, nitric acid and hydrofluoric acid, the mass fraction of hydrochloric acid is 2 to 20%, nitric acid is concentrated nitric acid, and hydrofluoric acid is concentrated hydrofluoric acid.
4. The method for producing high quality silicon based on industrial silicon according to claim 1, wherein the addition of the additive in step (2) comprises the following two modes: the additive is a compound or the additive is Al 2 O 3 And SiO 2 One or two of the following compounds in percentage by mass: al (Al) 2 O 3 ：1～30％，SiO 2 : 1-20%, and the balance being compound; the compound is a calcium compound, or one or two of a sodium compound and a magnesium compound, and the mass ratio of the calcium compound, the sodium compound and the magnesium compound is 100: (1-50): (1-50); the calcium compound comprises the following components in parts by mass: caO 1-100%, caCO 3 0～99％，CaCl 2 0～30％，CaF 2 0-15%; the sodium compound comprises Na 2 CO 3 At least one of NaCl and NaF; the magnesium compound comprises MgO, mgCO 3 And MgCl 2 At least one of them.
5. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the mass ratio of the industrial silicon to the additive in step (2) is 100: (5-50); the heating is carried out in a crucible, and the crucible is a quartz crucible or a graphite crucible.
6. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the heating in the step (3) is electromagnetic induction heating or resistance heating or a combination of both.
7. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the heating in the step (3) is performed in an ingot furnace; the heating temperature is 1450-1700 ℃, and the heat preservation time is 0.5-12 h; during heat preservation, refining is carried out through electromagnetic stirring and gas stirring, and one or two stirring methods are adopted; the gas stirred and blown in is argon, chlorine, steam, CO and CO 2 One or more of the following.
8. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the heating in step (3) is performed under normal pressure or under an argon atmosphere.
9. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the directional cooling in step (4) is performed by a polycrystalline furnace at a directional cooling rate of 0.3 to 3mm/min.
10. The method for producing high-quality silicon based on industrial silicon according to claim 1, wherein the separation in step (1) and step (5) is performed by using a tungsten hammer or a metal tungsten tool; the cleaning is carried out by adopting mixed acid, wherein the mixed acid is hydrochloric acid and concentrated hydrofluoric acid, the concentration of the hydrochloric acid is 2-20%, and the mass ratio of the hydrochloric acid to the concentrated hydrofluoric acid is (1-10): 1, the cleaning times are 1-2 times.
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