CN116855182A - Application of pyrolytic double faced adhesive tape in improving deep silicon etching uniformity - Google Patents
Application of pyrolytic double faced adhesive tape in improving deep silicon etching uniformity Download PDFInfo
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- CN116855182A CN116855182A CN202310744782.9A CN202310744782A CN116855182A CN 116855182 A CN116855182 A CN 116855182A CN 202310744782 A CN202310744782 A CN 202310744782A CN 116855182 A CN116855182 A CN 116855182A
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- adhesive tape
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- 238000005530 etching Methods 0.000 title claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 29
- 229920000139 polyethylene terephthalate Polymers 0.000 claims abstract description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims abstract description 7
- 229920001971 elastomer Polymers 0.000 claims abstract description 5
- 239000000806 elastomer Substances 0.000 claims abstract description 5
- -1 polyethylene terephthalate Polymers 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims abstract description 5
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 230000001070 adhesive effect Effects 0.000 abstract description 31
- 239000000853 adhesive Substances 0.000 abstract description 27
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 63
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2467/00—Presence of polyester
- C09J2467/006—Presence of polyester in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention belongs to the technical field of semiconductor devices, and particularly relates to an application of pyrolytic double-sided adhesive tape in improving deep silicon etching uniformity. The pyrolytic double-sided adhesive tape used in the application consists of a polyethylene terephthalate base film and silicone high-molecular polymer elastomers coated on both sides of the base film. According to the invention, the pyrolytic double-sided adhesive tape is used for deep silicon etching to replace a conventional adhesive, so that good adhesive property can be provided to prevent the wafer and the supporting sheet from shifting in the etching process, and the etching precision is improved; and the heat conduction performance between the wafer and the support sheet can be enhanced, so that the wafer can be quickly transferred and diffused to the support sheet through the pyrolytic double-sided adhesive tape, and the etching uniformity is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an application of pyrolytic double-sided adhesive tape in improving deep silicon etching uniformity.
Background
Deep silicon etching (deep silicon etch) is a key technology for preparing deep trench structures in microelectromechanical systems (MEMS) and Through Silicon Via (TSV) structures in three-dimensional packages, and is currently mainly performed by deep plasma etching (DRIE, "Bosch" process). Taking inductively coupled plasma etching as an example, spraying process gas required by chip processing through a nozzle at the upper part of the center of a machine table, simultaneously, exciting the process gas sprayed into a cavity into plasma by passing an incident frequency power supply through a coil at the upper part of the machine table, generating bias voltage by passing the incident frequency power supply through an electrostatic chuck for supporting a wafer, enabling the plasma to bombard the surface of the wafer, thereby etching a required pattern on the wafer, and alternately and circularly carrying out multiple deposition and etching processes by using C 4 F 8 Deposition and SF of gas 6 Etching C 4 F 8 Forming a fluorocarbon polymer in the dissociated plasma, and depositing a barrier on the surface of silicon to prevent fluorine ions from reacting with silicon, so that the etching selectivity is improved; and SF (sulfur hexafluoride) 6 As an etching gas, sxFy ions are generated in the plasma and collide with the substrate in a nearly vertical direction under the action of an electric field to form deep trenches. However, in the etching process, as the etching depth increases, silicon exposed from the side wall of the deep trench reacts with fluorine ions, so that the side wall is excessively etched, the etching width changes, and the etching uniformity is reduced, namely the deep silicon etching technology has the problem of etching uniformity.
Moreover, with miniaturization of electronic products, electronic chips matched with the electronic products are gradually thinner and thinner. When the thickness of the silicon wafer is smaller than 100 micrometers, the silicon wafer is extremely easy to bend and deform and even break in the etching processing process, so that the processing difficulty is greatly increased. In the prior art, the wafer is usually adhered to the carrier sheet for etching treatment, so that the problem of bending deformation or breakage of the wafer can be solved, and the wafer can be effectively prevented from falling into equipment after being etched through. In addition, the etching process also needs that the wafer and the carrier sheet cannot be relatively offset, otherwise, the accuracy of the etched pattern on the wafer is affected, and the adhesive between the wafer and the carrier sheet is required to have good adhesive property.
At present, photoresist, epoxy resin molding compound, thermosetting acrylic acid or methacrylic acid and the like are generally adopted as adhesive to ensure good adhesive property, for example, a micro-processing technology method of a piezoelectric quartz structure is disclosed in the prior art, processing is carried out on the basis of a sandwich QoS substrate of silicon-based/ultraviolet curing glue/quartz, the silicon-based provides support for the thinning polishing and releasing technology of the subsequent steps, the silicon-based support is adopted, the thickness of a piezoelectric quartz layer is reduced through the thinning and polishing technology, and the thinned piezoelectric quartz layer can be etched through a quartz dry etching technology; however, the conventional adhesive has poor thermal conductivity, cannot dissipate heat in time in the deep silicon etching process, so that the temperature of a wafer is increased, the etching reaction process is affected, the etching rate is abnormal, the structural sharpness is poor, and the uniformity of deep silicon etching is poor, and the performance and the qualification rate of devices are affected.
Disclosure of Invention
The invention aims to overcome the defect or defect that the conventional adhesive glue is easy to cause poor etching uniformity in the existing deep silicon etching process, and provides the application of the pyrolytic double-sided adhesive in improving the deep silicon etching uniformity, and the pyrolytic double-sided adhesive is used for deep silicon etching to replace the conventional adhesive, so that good adhesive performance can be provided to prevent the wafer and the supporting piece from shifting in the etching process, and the etching precision is improved; and the heat conduction performance between the wafer and the support sheet can be enhanced, so that the wafer can be quickly transferred and diffused to the support sheet through the pyrolytic double-sided adhesive tape, and the etching uniformity is improved.
The above object of the present invention is achieved by the following technical solutions:
the invention discloses application of a pyrolytic double-sided adhesive tape in improving deep silicon etching uniformity, wherein the pyrolytic double-sided adhesive tape consists of a polyethylene terephthalate (PET) base film and silicone high-molecular polymer elastomer layers coated on two sides of the base film.
Compared with the conventional resin bonding adhesive, photoresist or silicone oil adhesive, the pyrolytic double-sided adhesive ensures good bonding performance, can improve etching uniformity by enhancing the heat conducting performance between the wafer and the support sheet, can effectively solve the overflow of the adhesive, and can better reduce the pollution of the adhesive to the wafer.
In specific embodiments, the average thickness of the pyrolytic double-sided adhesive tape is 0.3-1 mm; preferably, the average thickness of the pyrolytic double-sided tape is 0.5mm.
The thickness of the pyrolytic double-sided adhesive tape is determined by the thickness of the PET base film and the thickness of the silicone high polymer elastomer layers coated on the two sides of the PET base film. When the thickness of the PET base film is fixed, the heat conduction performance and the bonding performance of the pyrolytic double-sided adhesive are mainly related to the thickness of the silicone high-molecular polymer elastomer layer. It is found that when the average thickness of the pyrolytic double-sided adhesive tape is 0.3-1 mm, the pyrolytic double-sided adhesive tape has good adhesive property and better heat conduction property.
Specifically, the application method comprises the following steps: bonding the back of the wafer with the supporting sheet through a pyrolytic double-sided adhesive tape, and then performing deep silicon etching treatment.
In the actual production process, a film sticking machine is adopted to stick the pyrolytic double-sided adhesive tape on the back surface of the wafer, then the other surface of the pyrolytic double-sided adhesive tape is stuck on the supporting sheet, then the wafer is put into deep silicon etching equipment, a corresponding program is selected for operation, and after the etching is finished, the wafer and the supporting sheet are separated by heating at a high temperature (90-240 ℃, preferably 120-140 ℃ and more preferably 120 ℃).
The wafer can be in any shape, and the supporting sheet is preferably made of a heat conducting material (such as stainless steel, ceramic and the like) matched with the etching equipment jig so as to ensure good heat conduction to enhance the heat dissipation effect, reduce the influence of heat on the wafer and further improve the deep silicon etching uniformity.
Preferably, a metal film is deposited on the back surface of the wafer. It is found that depositing a metal film with a certain thickness on the back of the wafer can not only further enhance the heat conduction effect of the wafer, but also effectively prevent the wafer from being etched through. In a specific embodiment, the back of the wafer can be plated with a metal film by electron beam evaporation, measurement and control sputtering or electroplating.
Specifically, the average thickness of the metal film on the back of the wafer is 1-5 mu m; preferably, the metal film has an average thickness of 2 μm. Alternatively, the metal film may be one or more of an aluminum film (Al), a titanium film (Ti), a tungsten film (W), a chromium film (Cr), a platinum film (Pt), and a gold film (Au). Preferably, the metal film on the back of the wafer is an aluminum film, because the aluminum film has a high thermal conductivity compared with other metal films to ensure good thermal conductivity, and is inexpensive and easily available.
Specifically, the depth of the deep silicon etching treatment is 300-675 μm. Optionally, the depth of the deep silicon etching treatment is 500 μm. The depth of the deep silicon etching can be selected according to the actual application requirements.
The invention has the following beneficial effects:
according to the invention, the pyrolytic double-sided adhesive tape is used for deep silicon etching to replace a conventional adhesive, so that good adhesive property can be provided to prevent the wafer and the supporting sheet from shifting in the etching process, and the etching precision is improved; and the heat conduction performance between the wafer and the support sheet can be enhanced, so that the wafer can be quickly transferred and diffused to the support sheet through the pyrolytic double-sided adhesive tape, and the etching uniformity is improved.
Drawings
FIG. 1 is a schematic view of the wafer and carrier stack of the present invention.
FIG. 2 is a plot of the inspection points of a wafer after deep silicon etching is completed according to the present invention.
Fig. 3 is an SEM image of different locations of the wafer after the deep silicon etching is completed in comparative example 1.
Fig. 4 is an SEM image of the wafer at various locations after the deep silicon etching is completed in example 1.
Detailed Description
The invention is further illustrated in the following drawings and specific examples, which are not intended to limit the invention in any way. Unless specifically stated otherwise, the reagents, methods and apparatus employed in the present invention are those conventional in the art.
Reagents and materials used in the following examples are commercially available unless otherwise specified.
(1) The thermal decomposition double faced adhesive tape 1 is manufactured by Suzhou and Chang electronic materials limited company, and the brand is HBL-100M279;
(2) The pyrolytic double faced adhesive tape 2 is manufactured by Shenzhen City-in-technology Co., ltd, and the brand is TR1040D;
(3) The photoresist is manufactured by Beijing Korea microelectronic materials Co., ltd, and has the brand number of KMP C7510.
Example 1
An application of pyrolytic double-sided adhesive in improving deep silicon etching uniformity, wherein the application method specifically comprises the following steps:
bonding the wafer and the support sheet by using a pyrolytic double-sided tape 1 (shown in figure 1), then placing the wafer and the support sheet into deep silicon etching equipment, and selecting corresponding procedures to operate (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm, O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Example 2
An application of pyrolytic double-sided adhesive in improving deep silicon etching uniformity, wherein the application method specifically comprises the following steps:
bonding the wafer and the support sheet through a pyrolytic double-sided adhesive tape 2, then placing the wafer and the support sheet into deep silicon etching equipment, and selecting corresponding procedures to operate (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm, O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Example 3
An application of pyrolytic double-sided adhesive in improving deep silicon etching uniformity, wherein the application method specifically comprises the following steps:
firstly, adopting electron beam evaporation coating to deposit a layer of metal Al film with the average thickness of 2 mu m on the back surface of a wafer, then bonding the metal Al film with a support sheet through a pyrolytic double-sided tape 1, then placing the support sheet into deep silicon etching equipment, and selecting corresponding procedures for operation (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm and O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Example 4
An application of pyrolytic double-sided adhesive in improving deep silicon etching uniformity, wherein the application method specifically comprises the following steps:
firstly, adopting electron beam evaporation coating to deposit a layer of metal Cr film with the average thickness of 2 mu m on the back surface of a wafer, then bonding the metal Cr film with a support sheet through a pyrolytic double-sided tape 1, then placing the support sheet into deep silicon etching equipment, and selecting corresponding procedures for operation (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm and O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Example 5
An application of pyrolytic double-sided adhesive in improving deep silicon etching uniformity, wherein the application method specifically comprises the following steps:
firstly, adopting electron beam evaporation coating to deposit a layer of metal Al film with the average thickness of 5 mu m on the back surface of a wafer, then bonding the metal Al film with a support sheet through a pyrolytic double-sided tape 1, then placing the support sheet into deep silicon etching equipment, and selecting corresponding procedures for operation (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm and O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Comparative example 1
A deep silicon etching method specifically comprises the following steps:
bonding the wafer and the support plate through photoresist, then placing the wafer and the support plate into deep silicon etching equipment, and selecting corresponding procedures to operate (specific etching parameters are that RF1 = 2500W, RF2 = 500W, ar = 300sccm, O) 2 ＝200sccm，C 4 F 8 ＝300sccm，FS 6 =50 sccm, f=25 mtorr; setting the etching depth to be 500 mu m and the etching width to be 53 mu m), and heating at 120 ℃ after etching is finished, so that the wafer and the support sheet can be separated.
Performance testing
The wafers after deep silicon etching in examples 1 to 5 and comparative example 1 were divided into 5 position areas of upper, middle, lower, left and right as shown in fig. 2, 1 point test was taken except for the center position area, 2 point tests were taken in the other position areas, the corresponding positions of the wafers were cracked by using a diamond pen, line widths of each test point (9) were measured by using SEM, and then uniformity of deep silicon etching was calculated according to the following formula.
Uniformity = (maximum value of line width-minimum value of line width)/average value of line width 100%,
wherein, the average value of the line widths=the sum of the line widths of the respective test points/the number of test points, and the test results are shown in table 1, fig. 3 and fig. 4.
Table 1 uniformity of wafers after deep silicon etching was completed in examples 1 to 5 and comparative example 1
| Numbering device | Adhesive agent | Metal film and thickness thereof | Uniformity of |
| Example 1 | Pyrolytic double faced adhesive tape 1 | / | 3.6％ |
| Example 2 | Pyrolytic double faced adhesive tape 2 | / | 4.2％ |
| Example 3 | Pyrolytic double faced adhesive tape 1 | Metallic Al film-2 μm | 2.2％ |
| Example 4 | Pyrolytic double faced adhesive tape 1 | Metal Cr film-2 μm | 3.1％ |
| Example 5 | Pyrolytic double faced adhesive tape 1 | Metallic Al film-5 μm | 2.9％ |
| Comparative example 1 | Photoresist | / | 9.7％ |
From the data in table 1, it can be seen from examples 1, 2 and comparative example 1 that using pyrolytic double-sided tape as an adhesive between the wafer and the liner can significantly improve the deep silicon etching uniformity of the wafer compared to the photoresist.
As can be seen from comparative example 1 (shown in FIG. 3), when photoresist is used as a binder, the etching width at the upper end of a certain inspection point of the wafer is 61.24 μm, the etching width at the lower end is 51.22 μm (FIG. 3A), and the difference in etching width is 10.02. Mu.m; the etching width of the upper end of another detection point of the wafer is 55.95 μm, the etching width of the lower end is 43.15 μm (fig. 3B), and the etching width difference is 12.8 μm, which fully indicates that the use of photoresist as an adhesive can result in poor uniformity of deep silicon etching.
As can be seen from example 1 (shown in fig. 4), when the pyrolytic double-sided tape is used as the adhesive, the etching width at the upper end of a certain inspection point of the wafer is 52.20 μm, the etching width at the lower end is 51.29 μm (fig. 4A), and the difference in etching width is only 0.91 μm; the etching width of the upper end of another detection point of the wafer is 53.88 mu m, the etching width of the lower end is 53.09 mu m (figure 4B), the etching width difference is only 0.79 mu m, and the uniformity of deep silicon etching can be obviously improved by using pyrolytic double-sided adhesive as an adhesive.
Meanwhile, as can be seen from examples 1, 3, 4 and 5, when the back surface of the wafer is plated with a metal film, the uniformity of deep silicon etching can be further improved; it has also been found that the type of metal film and the thickness of the metal film also have a certain effect on the uniformity of the deep silicon etching of the wafer, and that aluminum films are more conducive to improving the uniformity of the deep silicon etching than chromium films.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (10)
1. The application of the pyrolytic double-sided adhesive tape in improving the deep silicon etching uniformity is characterized in that the pyrolytic double-sided adhesive tape consists of a polyethylene terephthalate base film and silicone high-molecular polymer elastomer layers coated on two sides of the base film.
2. The use according to claim 1, characterized in that the pyrolytic double-sided adhesive tape has an average thickness of 0.3-1 mm.
3. The use according to claim 2, characterized in that the pyrolytic double-sided adhesive tape has an average thickness of 0.5mm.
4. A use according to any one of claims 1 to 3, characterized in that the method of use is: and bonding the back surface of the wafer with the support sheet through a pyrolytic double-sided adhesive tape, and then performing deep silicon etching treatment.
5. The use of claim 4, wherein a metal film is deposited on the back side of the wafer.
6. The use according to claim 5, wherein the metal film has an average thickness of 1 to 5 μm.
7. The use according to claim 6, wherein the metal film has an average thickness of 2 μm.
8. The use according to claim 5, wherein the metal film is one or more of an Al film, a Ti film, a Cr film, a Pt film and an Au film.
9. The use according to claim 4, wherein the depth of the deep silicon etching treatment is 300-675 μm.
10. The use according to claim 9, wherein the depth of the deep silicon etching process is 500 μm.
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