CN116845698B

CN116845698B - Laser, laser radar and mobile device

Info

Publication number: CN116845698B
Application number: CN202311051205.8A
Authority: CN
Inventors: 毛明明
Original assignee: Suteng Innovation Technology Co Ltd
Current assignee: Suteng Innovation Technology Co Ltd
Priority date: 2023-08-21
Filing date: 2023-08-21
Publication date: 2023-11-24
Anticipated expiration: 2043-08-21
Also published as: CN116845698A

Abstract

The embodiment of the application discloses a laser, a laser radar and movable equipment, wherein the laser comprises a light emitting structure and an electric connection structure, and the light emitting structure comprises an N-type reflecting layer, an active layer and a P-type reflecting layer: the electric connection structure comprises an N-type metal layer, a first insulating layer and a P-type metal layer which are stacked on the N-type reflecting layer; the first chamfer surface is connected between the first top surface and the first side surface of the N-type metal layer, and/or the included angle between the first top surface and the first side surface is larger than 90 degrees; and/or a second chamfer surface is arranged between the second top surface and the second side surface of the P-type metal layer, and/or the included angle between the second top surface and the second side surface is larger than 90 degrees. The laser provided by the embodiment of the application can realize the effect that the corner between the first top surface and the first side surface of the N-type metal layer and the corner between the second top surface and the second side surface of the P-type metal layer are smoother, can avoid concentrated and overlarge field intensity, ensures the normal working performance of an electric connection structure, and improves the reliability of the laser.

Description

Laser, laser radar and mobile device

Technical Field

The application relates to the technical field of laser detection equipment, in particular to a laser, a laser radar and movable equipment.

Background

Compared with other light sources, a Vertical-Cavity Surface-Emitting Laser (VCSEL) has the advantages of low wavelength temperature drift coefficient, circular emergent light spots, convenience for coupling and two-dimensional integration, capability of on-chip testing, convenience for mass production and the like, and is more and more paid attention to. Among these, lidar is one of the very important and rapidly developing fields of application.

In the current laser radar system, a vertical cavity surface emitting laser is adopted as a laser transmitter more and more, whether the laser radar is a semi-solid laser radar based on a MEMS vibrating mirror or a rotating mirror or an all-solid laser radar based on a one-dimensional and two-dimensional addressable transmitting array.

Among these, the two-dimensional addressable laser array has the advantages of saving the wiring area of the device, saving the energy of the whole system by lighting a specific area or a view angle, being convenient for integration, being made into an all-solid-state laser radar and the like due to the flexible configuration lighting mode, and receiving more and more attention.

Under the condition that the field of view requirement of the blind-patch radar is larger and larger, the two-dimensional matrix-addressable array is larger and larger in size, for example, the size of the two-dimensional matrix-addressable array is larger and larger than 10 x 10, and when the number of the blocks is increased, parasitic resistance influence caused by the fact that an electric connector on an N-type reflecting layer is directly connected with a driving plate in an external mode is more obvious.

To solve this problem, it is currently mainstream to add a metal layer in direct contact with the N-type reflective layer near the light emitting point, and to externally connect the driving board through an electrical connection on the metal layer. In order to avoid short circuits, the P-type metal layer of the metal layer needs to be deposited with an insulating layer before deposition, which forms a MIM (metal-insulator-metal) capacitor, and there is a risk that the capacitor may break down during the use of the device due to unavoidable imperfections in the deposition process.

Disclosure of Invention

The embodiment of the application provides a laser, a laser radar and movable equipment, which are used for solving the problem that the capacitor is easy to break down in the use process of a device because of unavoidable flaws in a deposition process in the related technology.

In a first aspect, an embodiment of the present application provides a laser, including:

the light-emitting structure comprises an N-type reflecting layer, an active layer and a P-type reflecting layer which are arranged in a stacked mode: the light-emitting structure is provided with a groove, the groove is positioned at one side of the P-type reflecting layer, which is away from the N-type reflecting layer, and the bottom wall of the groove extends to the N-type reflecting layer;

the electric connection structure is positioned in the groove and comprises an N-type metal layer, a first insulating layer and a P-type metal layer which are stacked on the N-type reflecting layer, wherein the N-type metal layer is provided with a first top surface and a first side surface, and the P-type metal layer is provided with a second top surface and a second side surface;

Wherein the electrical connection structure satisfies at least one of:

a first chamfer surface is connected between the first top surface and the first side surface;

the included angle between the first top surface and the first side surface is larger than 90 degrees;

a second chamfer surface is arranged between the second top surface and the second side surface;

the included angle between the second top surface and the second side surface is larger than 90 degrees.

In a second aspect, an embodiment of the present application provides a lidar, including:

the emitting module comprises the laser, and the laser is used for emitting detection light beams to a target object outside the laser radar;

and the receiving module is used for receiving the echo light beam reflected by the detection light beam through the target object.

In a third aspect, an embodiment of the present application provides a mobile device, including the above-mentioned lidar.

According to the laser, the laser radar and the movable equipment, the first chamfer surface is connected between the first top surface and the first side surface of the N-type metal layer, the included angle between the first top surface and the first side surface is larger than 90 degrees, and compared with the included angle between the top surface and the side surface of the N-type metal layer in the related art, which is 90 degrees or smaller than 90 degrees, the laser has the effect of enabling the corner between the top surface and the side surface to be smoother, the concentration and the overlarge field intensity can be avoided, the normal working performance of an electric connection structure is guaranteed, and the reliability of the laser is improved. Similarly, a second chamfer surface is arranged between the second top surface and the second side surface of the P-type metal layer, the included angle between the second top surface and the second side surface is larger than 90 degrees, and compared with the included angle between the top surface and the side surface of the P-type metal layer in the related art, which is 90 degrees or smaller than 90 degrees, the effect of enabling the corner between the top surface and the side surface to be smoother can be achieved, concentration and overlarge field intensity can be avoided, normal working performance of an electric connection structure is guaranteed, and reliability of a laser is improved.

Drawings

In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view showing a partial cross-sectional structure of a laser according to a first embodiment of the present application;

FIG. 2 is a schematic view of a partial cross-sectional structure of a laser according to a second embodiment of the present application;

FIG. 3 is a schematic top view of a laser according to a third embodiment of the present application;

FIG. 4 is a schematic cross-sectional view of an electrical connection structure in a laser according to a fourth embodiment of the present application;

FIG. 5 is a schematic cross-sectional view of an electrical connection structure in a laser according to a fifth embodiment of the present application;

FIG. 6 is a schematic cross-sectional view of an electrical connection structure in a laser according to a sixth embodiment of the present application;

fig. 7 is a schematic cross-sectional view of an electrical connection structure in a laser according to a seventh embodiment of the present application;

Fig. 8 is a schematic cross-sectional view of an electrical connection structure in a laser according to an eighth embodiment of the present application;

fig. 9 is a schematic cross-sectional view of an electrical connection structure in a laser according to a ninth embodiment of the present application.

Reference numerals illustrate:

1. a laser;

10. a light emitting structure; 11. an N-type reflective layer; 111. an N-type reflection region; 112. a substrate; 113. an N-type reflecting portion; 12. an active layer; 121. an active region; 13. a P-type reflective layer; 131. a P-type reflective region; 14. a groove; 15. a light emitting point; 16. an oxide layer;

20. an electrical connection structure; 21. an N-type metal layer; 211. a first top surface; 212. a first side; 22. a first insulating layer; 221. a sub-insulating layer; 221a, a first sub-insulating layer; 221b, a second sub-insulating layer; 221c, a third sub-insulating layer; 222. a first intermediate insulating portion; 223. a first edge insulating portion; 224. a third top surface; 225. a third side; 226. a third chamfer surface; 23. a P-type metal layer; 231. a second top surface; 2311. a first sub-top surface; 232. a second side; 233. an intermediate P-type metal portion; 234. a first edge P-type metal portion; 235. a second edge P-type metal portion; 24. a second insulating layer; 241. a second intermediate insulating portion; 242. a second edge insulating portion; 25. an end portion; 251. an electrical connection;

30. A first chamfer surface;

40. a second chamfer surface;

50. and a light emitting unit.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings.

When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the application as detailed in the accompanying claims.

In a first aspect, an embodiment of the present application provides a Laser, where the Laser may be a Vertical-Cavity Surface-Emitting Laser (VCSEL) or the like, which is not limited thereto. Hereinafter, a vertical cavity surface emitting laser will be exemplified as a laser.

Referring to fig. 1, a laser 1 includes a light emitting structure 10 and an electrical connection structure 20.

Specifically, the light emitting structure 10 includes an N-type reflective layer 11, an active layer 12, and a P-type reflective layer 13, which are stacked. The active layer 12 is used for radiating photons, the N-type reflecting layer 11 and the P-type reflecting layer 13 form a resonant cavity, the resonant cavity is used for enabling the photons radiated by the active layer 12 to form coherent oscillation, and an injection current which is strong enough to enable the photons to overcome various losses of the device to form lasing, and then the laser is emitted from the N-type reflecting layer 11 and the P-type reflecting layer 13 as an emergent reflecting layer. The active layer 12 may include one or more quantum wells, and the N-type reflective layer 11 and the P-type reflective layer 13 may be distributed bragg reflectors (Distributed Bragg Reflector, DBR) or the like, which is not limited.

It should be noted that the light emitting structure 10 further includes an oxide layer 16, where the oxide layer 16 is formed by an oxidation method, and the oxide layer 16 may be located on a side of the P-type reflective layer 13 adjacent to the active layer 12, where the oxide layer 16 defines an oxide hole, and the laser light exits from the oxide hole.

Referring to fig. 1 and 2, the light emitting structure 10 is formed with a trench 14, the trench 14 is located at one side of the P-type reflective layer 13 away from the N-type reflective layer 11, the bottom wall of the trench 14 extends to the N-type reflective layer 11, and the electrical connection structure 20 is located in the trench 14 and is stacked on the N-type reflective layer 11.

Referring to fig. 1, the N-type reflective layer 11 may have a single layer structure, and the bottom wall of the trench 14 may extend into the N-type reflective layer 11. Referring to fig. 2, the N-type reflective layer 11 may also have a dual-layer structure, for example, the N-type reflective layer 11 includes a substrate 112 and an N-type reflective portion 113 stacked together, where the N-type reflective portion 113 and the P-type reflective layer 13 may form a resonant cavity, the N-type reflective portion 113 may be a distributed bragg mirror, the substrate 112 may be an N-type doped substrate, for example, N-type doped gallium arsenide, etc., and the bottom wall of the trench 14 may extend to the substrate 112. Wherein the doping can reduce the contact resistance of the N-type reflective layer 11 in ohmic contact with the electrical connection structure 20. Note that, if the doping concentration of the contact portion between the N-type reflective layer 11 and the electrical connection structure 20 is high, the electrical connection structure 20 may be directly contacted with the N-type reflective layer 11 of a single layer without providing the substrate 112; if the doping concentration of the N-type reflective layer 11 is low, the substrate 112 may be disposed such that the electrical connection structure 20 is in contact with the substrate 112.

The light emitting structure 10 of the embodiment of the present application may include one light emitting point 15 for emitting light, or may include a plurality of light emitting points 15 for emitting light, where when the light emitting structure 10 includes a plurality of light emitting points 15, the light emitted by the laser 1 may cover a larger field of view, which is beneficial to improving the detection efficiency of the lidar. Hereinafter, an example will be described in which the light emitting structure 10 includes a plurality of light emitting points 15.

Referring to fig. 1 and 2, the bottom wall of the trench 14 extends into the N-type reflective layer 11, the trench 14 divides the N-type reflective layer 11 into a plurality of N-type reflective regions 111, the trench 14 divides the active layer 12 into a plurality of active regions 121, the trench 14 divides the P-type reflective layer 13 into a plurality of P-type reflective regions 131, the N-type reflective regions 111, the active regions 121 and the P-type reflective regions 131 are disposed in a one-to-one correspondence, and each N-type reflective region 111, the corresponding active region 121 and P-type reflective region 131 form a light emitting point 15.

Referring to fig. 3, among the plurality of light emitting points 15 of the light emitting structure 10, at least two light emitting points 15 form a light emitting unit 50, and the light emitting points 15 in the same light emitting unit 50 can be simultaneously lighted, so that compared with a single light emitting point 15 which is lighted at a time, the wiring difficulty can be saved, the detection efficiency can be accelerated, and the like.

It should be noted that, all the light emitting points 15 in the same light emitting unit 50 may be regularly arranged or may be randomly arranged. The regular arrangement may be, but not limited to, arrangement along a row direction, arrangement along a column direction, or arrangement along a row direction and a column direction in a matrix.

Referring to fig. 3, the laser 1 may include a plurality of light emitting units 50, and the number and arrangement of the light emitting points 15 in each light emitting unit 50 may be the same or different, which is not limited. The plurality of light emitting units 50 may be regularly arranged or may be randomly arranged. The regular arrangement may be, but not limited to, arrangement along a row direction, arrangement along a column direction, or arrangement along a row direction and a column direction in a matrix.

Referring to fig. 4, the electrical connection structure 20 includes an N-type metal layer 21, a first insulating layer 22 and a P-type metal layer 23 stacked on the N-type reflective layer 11. The light emitting structure 10 may be electrically connected to a driving board (not shown) through the P-type metal layer 23 in the electrical connection structure 20, so that the driving board can load a driving signal to the light emitting structure 10 to drive the light emitting structure 10 to emit light.

The N-type metal layer 21, the first insulating layer 22 and the P-type metal layer 23 form a capacitor structure, and if a peak appears at a corner of the capacitor structure, the peak is easy to concentrate and overlarge in field intensity, which leads to breakdown failure of the device, and based on this, referring to fig. 4 to 8, the electrical connection structure 20 of the embodiment of the present application adopts at least one of the following designs: a first chamfer surface 30 is connected between the first top surface 211 and the first side surface 212 of the N-type metal layer 21; the included angle between the first top surface 211 and the first side surface 212 is greater than 90 degrees; a second chamfer surface 40 is arranged between the second top surface 231 and the second side surface 232 of the P-type metal layer 23; the second top surface 231 is at an angle greater than 90 ° to the second side surface 232.

The first chamfer surface 30 is connected between the first top surface 211 and the first side surface 212 of the N-type metal layer 21, and an included angle between the first top surface 211 and the first side surface 212 is greater than 90 °, which is equal to or smaller than 90 ° compared with an included angle between the top surface and the side surface of the N-type metal layer in the related art, so that the effect of smoothing the corner between the first top surface 211 and the first side surface 212 can be achieved, the concentration and the excessive field intensity can be avoided, the normal working performance of the electrical connection structure 20 is ensured, and the reliability of the laser 1 is improved. Likewise, the second chamfer surface 40 is disposed between the second top surface 231 and the second side surface 232 of the P-type metal layer 23, and the included angle between the second top surface 231 and the second side surface 232 is greater than 90 °, which can achieve the effect of smoothing the corner between the second top surface 231 and the second side surface 232 compared with the included angle between the top surface and the side surface of the P-type metal layer of 90 ° or less in the related art, so as to avoid concentration and oversize of field intensity, ensure the normal working performance of the electrical connection structure 20, and improve the reliability of the laser 1.

Referring to fig. 4 and 5, the first chamfer 30 includes at least one of a chamfer and a chamfer, and/or the second chamfer 40 includes at least one of a chamfer and a chamfer. With reference to fig. 4, the cross section of the chamfer surface is in an arc line, and with reference to fig. 5, the cross section of the chamfer surface is in a line segment.

It is understood that the form of the first chamfer 30 includes a variety of forms, for example, the first chamfer 30 may be a chamfer, a chamfer or a combination of a chamfer and a chamfer. The form of the second chamfer 40 includes various forms, for example, the second chamfer 40 may be a chamfer, a chamfer or a combination of a chamfer and a chamfer.

If the electrical connection structure 20 includes both the first chamfer surface 30 and the second chamfer surface 40, the first chamfer surface 30 and the second chamfer surface 40 can be arbitrarily combined, so that more use requirements can be satisfied. For example, if the first chamfer 30 is a chamfer, the second chamfer 40 may be a chamfer, a chamfer or a combination of a chamfer and a chamfer; if the first chamfer 30 is a chamfer, the second chamfer 40 may be a chamfer, a chamfer or a combination of a chamfer and a chamfer; if the first chamfer 30 is a combination of a chamfer and a chamfer, the second chamfer 40 may be a chamfer, a combination of a chamfer and a chamfer, or the like.

Referring to fig. 6, the first chamfer surface 30 may include a plurality of chamfer surfaces connected in sequence, and the inclination angles of two adjacent chamfer surfaces are different; and/or, the second chamfer surface 40 includes a plurality of chamfer surfaces connected in sequence, and the inclination angles of two adjacent chamfer surfaces are different. Of course, the first chamfer surface 30 may include a plurality of chamfer surfaces connected in sequence, or may include a chamfer surface; the second chamfer surface 40 may include a plurality of chamfer surfaces connected in sequence, or may include a chamfer surface, and the specific structure of the first chamfer surface 30 and the second chamfer surface 40 is not limited in the embodiment of the present application.

It should be noted that, if the electrical connection structure 20 includes both the first chamfer surface 30 and the second chamfer surface 40, the shapes of the first chamfer surface 30 and the second chamfer surface 40 may be selected to be substantially similar, for example, if the first chamfer surface 30 is a chamfer surface, the second chamfer surface 40 is also a chamfer surface; if the first chamfer surface 30 is a chamfer surface, the second chamfer surface 40 is also a chamfer surface, and the like, since the N-type metal layer 21, the first insulating layer 22 and the P-type metal layer 23 are generally formed by a deposition process, and the thicknesses of the respective portions of the layer structure formed by the deposition process are substantially equal, if the shape of the first chamfer surface 30 is designed to be substantially similar to the shape of the second chamfer surface 40, when the electrical connection structure 20 is formed, only the processing process of the N-type metal layer 21 is correspondingly modified, so that after the N-type metal layer 21 has the first chamfer surface 30, the first insulating layer 22 and the P-type metal layer 23 are deposited on the N-type metal layer 21, and then the P-type metal layer 23 will also have the second chamfer surface 40. In this way, the shapes of the first chamfer surface 30 and the second chamfer surface 40 are substantially similar, and the molding process of the electrical connection structure 20 can be simplified, thereby reducing the manufacturing cost. Of course, the shape of the first chamfer surface 30 and the shape of the second chamfer surface 40 may be dissimilar, and may be flexibly designed according to the requirements, which is not limited.

Specifically, the forming of the N-type metal layer 21 having the first chamfer 30 may include: step S02, preparing a pre-use N-type metal layer with approximately equal thickness at each part, for example, forming the pre-use N-type metal layer in the groove 14 by a deposition process; step S04, a photoresist layer is arranged on the pre-use N-type metal layer, and one side, away from the pre-use N-type metal layer, of the photoresist layer is covered with a gray mask plate; the light transmittance of the edge of the gray mask plate corresponding to the pre-applied N-type metal layer is higher than that of the middle of the pre-applied N-type metal layer; in step S06, the pre-use N-type metal layer is exposed, developed and etched by using the gray mask plate, so that a chamfer surface is formed between the top surface and the side surface of the pre-use N-type metal layer, and the N-type metal layer 21 with the first chamfer surface 30 is obtained.

The different areas on the pre-use N-type metal layer can be corroded to different degrees through the fact that the light transmittance of each part of the gray mask plate is different; for example, the gray mask plate corresponding to the edge of the pre-used N-type metal layer has higher light transmittance and is greatly corroded, so that the thickness of the pre-used N-type metal layer at the position is greatly reduced, the gray mask plate corresponding to the middle of the pre-used N-type metal layer has lower light transmittance and is less corroded, the thickness of the pre-used N-type metal layer at the position is reduced to a lesser extent, a chamfer surface is formed between the top surface and the side surface of the pre-used N-type metal layer, the forming mode is simple, the manufacturing cost is low, the first chamfer surface 30 can be made to have better smoothness, and the reliability of the laser 1 is improved.

Referring to fig. 7 and fig. 8, if the first top surface 211 and the first side surface 212 of the N-type metal layer 21 are disposed at an included angle greater than 90 °, the included angle between the first top surface 211 and the first side surface 212 may be any value greater than 90 °, which is not limited in the embodiment of the present application; for example, 95 °, 100 °, 120 °, 150 °, 170 °, etc. Alternatively, the included angle between the first top surface 211 and the first side surface 212 may be greater than or equal to 100 ° and less than or equal to 150 °, so that the connection between the first top surface 211 and the first side surface 212 is smoother and less prone to spikes.

If the second top surface 231 and the second side surface 232 of the P-type metal layer 23 are disposed at an angle greater than 90 °, the angle between the second top surface 231 and the second side surface 232 may be any value greater than 90 °, which is not limited in the embodiment of the present application; for example, 95 °, 100 °, 120 °, 150 °, 170 °, etc. Alternatively, the included angle between the second top surface 231 and the second side surface 232 may be greater than or equal to 100 ° and less than or equal to 150 °, so that the connection between the second top surface 231 and the second side surface 232 is smoother and less prone to spikes.

The angle between the first top surface 211 and the first side surface 212 of the N-type metal layer 21 and the angle between the second top surface 231 and the second side surface 232 of the P-type metal layer 23 may be equal or different, which is not limited in the embodiment of the present application. Alternatively, the first top surface 211 and the second top surface 231 may be parallel to each other, and the first side surface 212 and the second side surface 232 may be parallel to each other.

Referring to fig. 8, when the first top surface 211 and the first side surface 212 of the N-type metal layer 21 are disposed at an included angle greater than 90 °, the first top surface 211 and the first side surface 212 may also be provided with a first chamfer surface 30; the second top surface 231 and the second side surface 232 of the P-type metal layer 23 may have an included angle greater than 90 ° and the second top surface 231 and the second side surface 232 may have a second chamfer surface 40. So that the connection between the first top surface 211 and the first side surface 212 of the N-type metal layer 21 and the second top surface 231 and the second side surface 232 of the P-type metal layer 23 is smoother.

Referring to fig. 4 to 9, the first insulating layer 22 may include at least one sub-insulating layer 221, for example, the first insulating layer 22 illustrated in fig. 4 to 8 includes one sub-insulating layer 221, or the first insulating layer 22 illustrated in fig. 9 includes a plurality of sub-insulating layers 221 stacked.

When the first insulating layer 22 includes a sub-insulating layer 221, the sub-insulating layer 221 may be made of a material with a low dielectric constant, or may be made of a material with a high dielectric constant. Alternatively, the sub-insulating layer 221 is made of a material with a high dielectric constant, and the reliability of the electrical connection structure 20 can be improved due to the fact that the high dielectric constant can withstand higher voltage and breakdown field strength under the same conditions. Wherein the material with high dielectric constant can be arbitrarily material with dielectric constant higher than SiO ₂ For example, the high dielectric constant material may include Al ₂ O ₃ 、HfO ₂ 、Nb ₂ O ₅ At least one of these is not limited thereto.

When the first insulating layer 22 includes a plurality of sub-insulating layers 221 stacked, for example, when the first insulating layer 22 includes two, three, four, five, etc. sub-insulating layers 221 stacked, the dielectric constants of the adjacent two sub-insulating layers 221 are different, and by designing the first insulating layer 22 to include the plurality of sub-insulating layers 221, the risk of cavities and stress increase caused by depositing thick films at one time can be avoided, and the purpose of improving the reliability of the electrical connection structure 20 can also be achieved.

It can be appreciated that, among the plurality of sub-insulating layers 221, each sub-insulating layer 221 may be made of a material with a low dielectric constant, or may be made of a material with a high dielectric constant. In the embodiment of the present application, among the plurality of sub-insulating layers 221, at least one sub-insulating layer 221 is made of a material with a high dielectric constant, so that the first insulating layer 22 can withstand higher voltage and breakdown field strength. The sub-insulating layers 221 made of a material with a high dielectric constant may be located at edge layers of the plurality of sub-insulating layers 221 or may be located at intermediate layers of the plurality of sub-insulating layers 221.

Optionally, referring to fig. 9, the plurality of sub-insulating layers 221 includes a first sub-insulating layer 221a, a second sub-insulating layer 221b, and a third sub-insulating layer 221c, wherein the second sub-insulating layer 221b is located between the first sub-insulating layer 221a and the third sub-insulating layer 221c, a dielectric constant of the second sub-insulating layer 221b is greater than a dielectric constant of the first sub-insulating layer 221a and a dielectric constant of the second sub-insulating layer 221b is greater than a dielectric constant of the third sub-insulating layer 221 c. The first sub-insulating layer 221a and the third sub-insulating layer 221c may be two sub-insulating layers 221 located at an edge side among the plurality of sub-insulating layers 221.

The preparation materials of the first sub-insulating layer 221a and the third sub-insulating layer 221c may be the same or different. Wherein the preparation material of the first sub-insulating layer 221a and the preparation material of the third sub-insulating layer 221c may include SiN, siO ₂ The second sub-insulating layer 221b may be made of a material including Al ₂ O ₃ 、HfO ₂ 、Nb ₂ O ₅ At least one of them.

The sub-insulating layer 221 in the first insulating layer 22 may be formed by atomic layer deposition (Atomic Layer Deposition, ALD), and the sub-insulating layer 221 formed by the atomic layer deposition process is more dense than the insulating layer formed by plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), and thus can withstand higher voltage and breakdown field strength. When the first insulating layer 22 includes a plurality of sub-insulating layers 221, a part of the sub-insulating layers 221 may be formed by using an atomic layer deposition process, or all of the sub-insulating layers 221 may be formed by using an atomic layer deposition process. Optionally, if the plurality of sub-insulating layers 221 includes the first sub-insulating layer 221a, the second sub-insulating layer 221b, and the third sub-insulating layer 221c, the second sub-insulating layer 221b may be formed by an atomic layer deposition process.

Referring to fig. 4 to 9, the first insulating layer 22 includes a first intermediate insulating portion 222 and a first edge insulating portion 223, and the first intermediate insulating portion 222 is stacked on a side of the N-type metal layer 21 facing away from the N-type reflective layer 11; one end of the first edge insulation part 223 is connected to an edge of the first intermediate insulation part 222, and the other end of the first edge insulation part 223 extends to the N-type reflective layer 11. That is, the first insulating layer 22 can have a better wrapping effect on the N-type metal layer 21, so that the N-type metal layer 21 and the P-type metal layer 23 can be better isolated.

If the first insulating layer 22 includes a plurality of sub-insulating layers 221 stacked, each sub-insulating layer 221 may include a portion that participates in forming the first intermediate insulating portion 222 and a portion that participates in forming the first edge insulating portion 223. It is understood that the middle and the edges of the first insulating layer 22 are both laminated multi-layered structures.

Referring to fig. 4, the third top surface 224 and the third side surface 225 of the first insulating layer 22 may be connected via a third chamfer surface 226, and/or an angle between the third top surface 224 and the third side surface 225 of the first insulating layer 22 may be greater than 90 °.

If the thicknesses of the respective portions of the first insulating layer 22 are approximately equal, the first top surface 211 and the first side surface 212 of the N-type metal layer 21 are connected by the first chamfer surface 30, and the third top surface 224 and the third side surface 225 of the first insulating layer 22 may be connected by the third chamfer surface 226, so that the connection between the third top surface 224 and the third side surface 225 of the first insulating layer 22 is smoother. Similarly, if the thicknesses of the respective portions of the first insulating layer 22 are approximately equal, and the included angle between the first top surface 211 and the first side surface 212 of the N-type metal layer 21 is greater than 90 °, the included angle between the third top surface 224 and the third side surface 225 of the first insulating layer 22 is also greater than 90 °, so that the connection between the third top surface 224 and the third side surface 225 of the first insulating layer 22 is smoother. Note that, if the first insulating layer 22 is formed by a deposition process, the first insulating layer 22 may be regarded as having substantially equal thickness at each portion.

The electrical connection structure 20 further includes a second insulating layer 24, the second insulating layer 24 is stacked between the N-type reflective layer 11 of the light emitting structure 10 and the N-type metal layer 21 of the electrical connection structure 20, the second insulating layer 24 includes a second middle insulating portion 241 and a second edge insulating portion 242, the second middle insulating portion 241 is formed with a through hole (not shown in the drawing), the N-type metal layer 21 is disposed corresponding to the second middle insulating portion 241, and the N-type metal layer 21 is further disposed in the through hole and electrically connected to the N-type reflective layer 11. By arranging the second insulating layer 24 and arranging the N-type metal layer 21 corresponding to the second middle insulating portion 241 of the second insulating layer 24, when the P-type metal layer 23 is formed, even if the P-type metal layer 23 falls into the second edge insulating portion 242 of the second insulating layer 24, the P-type metal layer 23 cannot directly contact with the N-type reflecting layer 11 due to the barrier of the second edge insulating portion 242, so that the P-type metal layer is not easy to short, and the normal operation of the device is facilitated.

Further, when the first insulating layer 22 includes the first intermediate insulating portion 222 and the first edge insulating portion 223, one end of the first edge insulating portion 223 away from the first intermediate insulating portion 222 may extend to the second edge insulating portion 242, so that the first insulating layer 22 and the second insulating layer 24 may wrap the N-type metal layer 21, and short circuit caused by contact between the N-type metal layer 21 and the P-type metal layer 23 is avoided.

Referring to fig. 4, the P-type metal layer 23 may include a middle P-type metal portion 233, a first edge P-type metal portion 234, and a second edge P-type metal portion 235.

Wherein the middle P-type metal portion 233 is stacked on a side of the first middle insulating portion 222 facing away from the N-type metal layer 21; the first edge P-type metal portion 234 is stacked on one side of the first edge insulation portion 223 facing away from the N-type metal layer 21, and one end of the first edge P-type metal portion 234 is connected to the edge of the middle P-type metal portion 233, and the other end of the first edge P-type metal portion 234 extends to the second insulation layer 24; the second edge P-type metal portion 235 is connected to a side of the first edge P-type metal portion 234 facing away from the N-type metal layer 21, and the second edge P-type metal portion 235 is stacked on the second insulating layer 24.

That is, the P-type metal layer 23 covers the second insulating layer 24 in addition to the first insulating layer 22, so that when the laser 1 includes a plurality of electrical connection structures 20 corresponding to the plurality of light emitting points 15 one by one, at least part of the P-type metal layers 23 of the electrical connection structures 20 can be connected together through the second edge P-type metal portion 235, so as to reduce wiring and improve manufacturing efficiency of the laser 1. For example, the P-type metal layers 23 corresponding to all the light emitting points 15 in the same light emitting unit 50 may be connected together through the second edge P-type metal portion 235, so that the same light emitting unit 50 may be connected with electricity at the same time, so as to reduce the number of wires.

It should be noted that, when the P-type metal layer 23 includes the middle P-type metal portion 233, the first edge P-type metal portion 234, and the second edge P-type metal portion 235, the second top surface 231 of the P-type metal layer 23 includes a first sub-top surface 2311 and a second sub-top surface (not labeled in the drawing), the first sub-top surface 2311 is a surface of the middle P-type metal portion 233 facing away from the first middle insulating portion 222, the second sub-top surface is a surface of the first edge P-type metal portion 234 facing away from the second insulating layer 24, and the second side surface 232 is a surface of the first edge P-type metal portion 234 facing away from the first edge insulating portion 223.

If the P-type metal layer 23 includes the second chamfer 40, the second chamfer 40 may be connected between the second sub-top surface and the second side surface 232, i.e., the second chamfer 40 extends to the second sub-top surface; the second chamfer 40 may be connected between the first sub-top 2311 and the second side 232, i.e. the entire second sub-top is chamfered, and the second chamfer 40 extends to the first sub-top 2311, which is not limited thereto.

In an exemplary embodiment, the first edge insulating portion 223 has a ring structure surrounding the periphery of the N-type metal layer 21, the first edge P-type metal portion 234 has a ring structure surrounding the periphery of the first edge insulating portion 223, and the second edge P-type metal portion 235 has a ring structure surrounding the periphery of the first edge P-type metal portion 234. For example, if the cross section of the N-type metal layer 21 is square, the cross section of the first edge insulation portion 223, the cross section of the first edge P-type metal portion 234, and the cross section of the second edge P-type metal portion 235 are all substantially in a loop shape. For example, if the cross section of the N-type metal layer 21 is circular, the cross section of the first edge insulating portion 223, the cross section of the first edge P-type metal portion 234, and the cross section of the second edge P-type metal portion 235 are all substantially circular, which is not limited.

The above-mentioned annular structural design of the first edge insulating portion 223, the first edge P-type metal portion 234, and the second edge P-type metal portion 235 is beneficial to connecting the light emitting points 15 in the same light emitting unit 50 and other surrounding light emitting points 15 with each other through the respective second edge P-type metal portions 235 when one light emitting unit 50 of the laser 1 includes a plurality of light emitting points 15, that is, the P-type metal layers 23 of all the light emitting points 15 of the same light emitting unit 50 are connected into a whole, so that the number of wires of the same light emitting unit 50 can be reduced.

In another exemplary embodiment, the first edge insulation portions 223 may be located at a portion side of the N-type metal layer 21 instead of having a ring structure surrounding the periphery of the N-type metal layer 21, for example, the number of the first edge insulation portions 223 is two, and the two first edge insulation portions 223 are respectively located at opposite sides of the N-type metal layer 21; the number of the first edge P-type metal parts 234 is two, and each first edge P-type metal part 234 corresponds to one first edge insulation part 223; the number of the second edge P-type metal portions 235 is two, and each second edge P-type metal portion 235 corresponds to one first edge P-type metal portion 234. For example, if the plurality of light emitting points 15 in the same light emitting unit 50 are arranged along a first direction (for example, a row direction or a column direction), the N-type metal layers 21 of the plurality of light emitting points 15 may be connected as a whole and arranged along the first direction, and the two first edge insulation portions 223 may be respectively located at two opposite sides of the N-type metal layers 21 along a second direction, which is perpendicular to the first direction, so that the first insulation layers 22 corresponding to the plurality of light emitting points 15 in the same light emitting unit 50 may be connected as a whole, and the P-type metal layers 23 may be connected as a whole, so as to reduce the number of wires of the same light emitting unit 50.

In the laser 1, the first edge insulating portion 223, the first edge P-type metal portion 234, and the second edge P-type metal portion 235 of the partial electrical connection structure 20 may be designed in a ring structure, and the number of the first edge insulating portion 223, the first edge P-type metal portion 234, and the second edge P-type metal portion 235 of the partial electrical connection structure 20 may be two and located on opposite sides of the N-type metal layer 21, which may be flexibly designed according to practical requirements, and is not limited thereto.

Referring to fig. 3 again, in the laser 1, the laser may include m×n light emitting units 50, where m×n light emitting units 50 are divided into M rows and N columns, where M is greater than or equal to 2, N is greater than or equal to 1, the electrical connection structures 20 corresponding to all the light emitting points 15 in the same column of light emitting units 50 may extend along the column direction, and have two opposite end portions 25 along the column direction, and at least one end portion 25 may be provided with an electrical connector 251 for electrically connecting with a driving board, so that the driving board can load a driving signal to the light emitting units 50 to drive the light emitting units 50 to emit light.

It should be noted that the P-type metal layers 23 of the electrical connection structures 20 corresponding to all the light emitting points in the same row of light emitting units 50 may be integrally connected, and have two ends 25 in the row direction, and the electrical connection member 251 may be electrically connected to the P-type metal layers 23, so that the driving signals of the driving board may be recorded in the P-type metal layers 23. The electrical connector 251 may be a pad, etc., which is not limited thereto.

When the electrical connector 251 is disposed at one end 25 and the electrical connector 251 is electrically connected to the driving board, in the light emitting unit 50 corresponding to the electrical connector 251, the light emitting point 15 close to the electrical connector 251 has higher light emitting intensity than the light emitting point 15 far away from the electrical connector 251, so that when the length in the column direction is longer, the light emitting intensity of the light emitting point 15 in the same light emitting unit 50 will have obvious brightness difference.

Specifically, one electrical connector 251 may be provided at one end 25 when the length of the light emitting units 50 in the same column is less than the first predetermined value, and one electrical connector 251 may be provided at each of the two ends 25 or at least three electrical connectors 251 may be provided at different positions in the column direction when the length of the light emitting units 50 in the same column is greater than or equal to the first predetermined value. The first preset value can be flexibly designed according to specific requirements, and is not limited.

When the electrical connectors 251 are disposed at both end portions 25, the two electrical connectors 251 can simultaneously load driving signals to the corresponding light emitting units 50, so that the light emitting points 15 in the light emitting units 50 emit light, and compared with the case that the electrical connectors 251 are disposed at the single end portion 25, the distance between part of the light emitting points 15 and the electrical connectors 251 can be shortened, the transmission distance of the driving signals can be reduced, and the light intensity of the light emitted by each light emitting point 15 is approximately uniform.

While the above description has been made of the electrical connection scheme between the cathode of the laser 1 and the driving board, the anode of the laser 1 may be provided with an electrical connector electrically connected to the driving board at least at one end of the light emitting units 50 in the same row, and this is not a limitation.

It should be noted that the laser 1 according to the embodiment of the present application is applicable to both a two-dimensional addressable array of a front-emitting laser and a two-dimensional addressable array of a back-emitting laser.

In a second aspect, an embodiment of the present application provides a laser radar, where the laser radar includes a transmitting module and a receiving module, the transmitting module includes the laser device, the laser device is configured to emit a probe beam to a target object outside the laser radar, and the receiving module is configured to receive an echo beam reflected by the target object from the probe beam.

Since the laser radar includes the laser 1, the specific structure of the laser 1 refers to the above embodiments, and since the laser radar adopts all the technical solutions of all the embodiments, at least the technical solutions of the embodiments have all the beneficial effects, which are not described in detail herein.

Because the movable equipment comprises the laser radar, the specific structure of the laser radar refers to the embodiment, and because the movable equipment adopts all the technical schemes of all the embodiments, the movable equipment has at least all the beneficial effects brought by the technical schemes of the embodiments, and the detailed description is omitted.

In the description of the present application, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art. Furthermore, in the description of the present application, unless otherwise indicated, "a plurality" means at least two, for example, two, three, four, and the like. "and/or", describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship.

The foregoing disclosure is illustrative of the present application and is not to be construed as limiting the scope of the application, which is defined by the appended claims.

Claims

1. A laser (1), characterized by comprising:

the light-emitting structure (10), the light-emitting structure (10) comprises an N-type reflecting layer (11), an active layer (12) and a P-type reflecting layer (13) which are stacked: the light-emitting structure (10) is provided with a groove (14), the groove (14) is positioned at one side of the P-type reflecting layer (13) away from the N-type reflecting layer (11), and the bottom wall of the groove (14) extends to the N-type reflecting layer (11);

an electrical connection structure (20), wherein the electrical connection structure (20) is located in the trench (14), the electrical connection structure (20) comprises an N-type metal layer (21), a first insulating layer (22) and a P-type metal layer (23) which are stacked on the N-type reflecting layer (11), the N-type metal layer (21) has a first top surface (211) and a first side surface (212), and the P-type metal layer (23) has a second top surface (231) and a second side surface (232);

wherein the electrical connection structure (20) satisfies at least one of:

a first chamfer surface (30) is connected between the first top surface (211) and the first side surface (212);

-the first top surface (211) and the first side surface (212) have an angle of more than 90 °;

a second chamfer surface (40) is arranged between the second top surface (231) and the second side surface (232);

the second top surface (231) and the second side surface (232) form an included angle of more than 90 degrees.

2. The laser (1) according to claim 1, wherein the first chamfer face (30) comprises at least one of a chamfer face and a chamfer face;

and/or the second chamfer surface (40) comprises at least one of a chamfer surface and a chamfer surface.

3. The laser (1) according to claim 1 or 2, wherein the first chamfer surface (30) comprises a plurality of chamfer surfaces connected in sequence, the inclination angles of two adjacent chamfer surfaces being unequal;

and/or the second chamfer surface (40) comprises a plurality of chamfer surfaces which are connected in sequence, and the inclination angles of two adjacent chamfer surfaces are different.

4. The laser (1) according to claim 1, characterized in that the angle of the first top surface (211) of the N-type metal layer (21) to the first side surface (212) is greater than or equal to 100 ° and less than or equal to 150 °;

and/or, an included angle between the second top surface (231) and the second side surface (232) of the P-type metal layer (23) is greater than or equal to 100 degrees and less than or equal to 150 degrees.

5. The laser (1) according to claim 1, wherein the first insulating layer (22) comprises a plurality of sub-insulating layers (221) stacked, and dielectric constants of adjacent two of the sub-insulating layers (221) are different;

and/or, the first insulating layer (22) comprises a sub-insulating layer (221), and the sub-insulating layer (221) is formed through an atomic layer deposition process;

and/or, the first insulating layer (22) is provided with a third top surface (224) and a third side surface (225), and a third chamfer surface (226) is connected between the third top surface (224) and the third side surface (225);

and/or, the first insulating layer (22) has a third top surface (224) and a third side surface (225), and an included angle between the third top surface (224) and the third side surface (225) is greater than 90 °.

6. The laser (1) according to claim 1, wherein the first insulating layer (22) comprises a plurality of sub-insulating layers (221), the plurality of sub-insulating layers (221) comprising a first sub-insulating layer (221 a), a second sub-insulating layer (221 b) and a third sub-insulating layer (221 c), the second sub-insulating layer (221 b) being located between the first sub-insulating layer (221 a) and the third sub-insulating layer (221 c);

the dielectric constant of the second sub-insulating layer (221 b) is greater than the dielectric constant of the first sub-insulating layer (221 a), and the dielectric constant of the second sub-insulating layer (221 b) is greater than the dielectric constant of the third sub-insulating layer (221 c);

The second sub-insulating layer (221 b) is made of Al ₂ O ₃ 、HfO ₂ 、Nb ₂ O ₅ At least one of the first sub-insulating layer (221 a) and the third sub-insulating layer (221 c) is made of SiN, siO ₂ At least one of them.

7. The laser (1) according to claim 1, wherein the electrical connection structure (20) further comprises:

the second insulating layer (24), second insulating layer (24) range upon range of set up in between N type reflection stratum (11) and N type metal layer (21), second insulating layer (24) are including second intermediate insulation portion (241) and second marginal insulation portion (242), second intermediate insulation portion (241) are formed with the through-hole, N type metal layer (21) correspond second intermediate insulation portion (241) set up, N type metal layer (21) still be located in the through-hole and with N type reflection stratum (11) conductive connection.

8. The laser (1) according to claim 7, characterized in that,

the first insulating layer (22) includes a first intermediate insulating portion (222) and a first edge insulating portion (223);

the first middle insulating part (222) is arranged on one side of the N-type metal layer (21) away from the N-type reflecting layer (11) in a stacking manner;

one end of the first edge insulation part (223) is connected to the edge of the first intermediate insulation part (222), and the other end of the first edge insulation part (223) extends to the second edge insulation part (242);

The P-type metal layer (23) comprises a middle P-type metal part (233), a first edge P-type metal part (234) and a second edge P-type metal part (235);

the middle P-type metal part (233) is arranged on one side of the first middle insulation part (222) away from the N-type metal layer (21) in a stacking manner;

the first edge P-type metal part (234) is arranged on one side of the first edge insulation part (223) away from the N-type metal layer (21) in a stacking way, one end of the first edge P-type metal part (234) is connected with the edge of the middle P-type metal part (233), and the other end of the first edge P-type metal part (234) extends to the second insulation layer (24);

the second edge P-type metal part (235) is connected to one side, away from the N-type metal layer (21), of the first edge P-type metal part (234), and the second edge P-type metal part (235) is arranged on the second insulating layer (24) in a stacked mode.

9. The laser (1) of claim 8, wherein the second top surface (231) of the P-type metal layer (23) comprises a first sub-top surface (2311) and a second sub-top surface;

the first sub-top surface (2311) is a surface of the intermediate P-type metal portion (233) facing away from the first intermediate insulating portion (222);

The second sub-top surface is the surface of the first edge P-type metal portion (234) facing away from the second insulating layer (24);

the second side surface (232) is a surface of the first edge P-type metal portion (234) facing away from the first edge insulating portion (223);

wherein the second chamfer (40) extends to the first sub-top surface (2311) or the second sub-top surface.

10. The laser (1) according to claim 8, wherein the first edge insulating portion (223) has a ring-shaped structure surrounding the periphery of the N-type metal layer (21), the first edge P-type metal portion (234) has a ring-shaped structure surrounding the periphery of the first edge insulating portion (223), and the second edge P-type metal portion (235) has a ring-shaped structure surrounding the periphery of the first edge P-type metal portion (234);

and/or the number of the first edge insulation parts (223) is two, and the two first edge insulation parts (223) are respectively positioned at two opposite sides of the N-type metal layer (21); the number of the first edge P-type metal parts (234) is two, and each first edge P-type metal part (234) corresponds to one first edge insulation part (223); the number of the second edge P-type metal parts (235) is two, and each second edge P-type metal part (235) corresponds to one first edge P-type metal part (234).

11. The laser (1) according to claim 1, characterized in that the bottom wall of the trench (14) extends to the inside of the N-type reflective layer (11),

the groove (14) divides the N-type reflecting layer (11) into a plurality of N-type reflecting areas (111), the groove (14) divides the active layer (12) into a plurality of active areas (121), the groove (14) divides the P-type reflecting layer (13) into a plurality of P-type reflecting areas (131), the N-type reflecting areas (111), the active areas (121) and the P-type reflecting areas (131) are arranged in a one-to-one correspondence manner, and each N-type reflecting area (111) and one corresponding active area (121) and one corresponding P-type reflecting area (131) form a luminous point (15);

the laser (1) comprises a plurality of electric connection structures (20), and each electric connection structure (20) corresponds to one luminous point (15);

at least two luminous points (15) form a luminous unit (50), and the P-type metal layers (23) of the electric connection structures (20) corresponding to all the luminous points (15) in the same luminous unit (50) are connected into a whole.

12. The laser (1) according to claim 11, characterized in that all the light emitting points (15) within the same light emitting unit (50) are arranged in a row direction and/or in a column direction.

13. The laser (1) according to claim 11, characterized in that the laser (1) comprises M x N of the light emitting units (50), M x N of the light emitting units (50) being divided into M rows and N columns, wherein M is ≡2, N is ≡1;

the electrical connection structures (20) corresponding to all the light emitting points (15) in the same row of the light emitting units (50) extend along the row direction and are provided with two end parts (25) opposite along the row direction, and at least one end part (25) is provided with an electrical connector (251);

the laser (1) further comprises a drive plate, which is electrically conductively connected to the electrical connection (251).

14. A lidar, comprising:

an emission module comprising the laser (1) of any one of claims 1 to 13, the laser (1) being for emitting a probe beam towards a target object outside the lidar;

15. A mobile device comprising the lidar of claim 14.