CN116819883A - Mask and mask quality testing method - Google Patents
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- CN116819883A CN116819883A CN202310897865.1A CN202310897865A CN116819883A CN 116819883 A CN116819883 A CN 116819883A CN 202310897865 A CN202310897865 A CN 202310897865A CN 116819883 A CN116819883 A CN 116819883A
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- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000012372 quality testing Methods 0.000 title claims description 14
- 238000012544 monitoring process Methods 0.000 claims abstract description 197
- 238000005259 measurement Methods 0.000 claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims description 31
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- 239000011295 pitch Substances 0.000 description 3
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
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Abstract
The mask comprises an exposure area and a non-exposure area, wherein the exposure area is provided with a main pattern, the non-exposure area is provided with at least one pattern density monitoring mark, and the pattern density monitoring mark comprises a measuring pattern and a density filling pattern surrounding the measuring pattern; the density of the density filling patterns in at least one pattern density monitoring mark is matched with the density of the main patterns, and the deviation of the actual size and the target size of the measured patterns in the pattern density monitoring mark is used for monitoring the quality of the mask. In the mask provided by the disclosure, the pattern density monitoring mark comprising the measurement pattern and the density filling pattern is arranged, and the deviation between the actual size and the target size of the measurement pattern is monitored to determine the size deviation of the distribution density degree of the main pattern by the pattern, so that the quality of the mask is determined, the mask with defects is prevented from being adopted in the photoetching process, and the risk of cost loss is reduced.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a mask and a mask quality testing method.
Background
The mask plate is provided with a pattern structure for forming an integrated circuit, and when an exposure process of a photoetching process is carried out, light irradiates the mask plate, so that the light is penetrated or shielded at a specific position, and a pattern is defined on a wafer. Along with the miniaturization of critical dimensions (Critical Dimension, CD), the pattern lines on the mask become thinner, the area and complexity of the pattern become larger, and the quality of the pattern on the mask needs to be monitored to reduce the cost waste.
At present, a monitoring mark is usually arranged in a non-exposure area of a mask, and a pattern arranged in the monitoring mark can monitor the width dimension of the pattern in the exposure area under the influence of linearity and also can monitor the width dimension of the pattern under the influence of optical proximity effect. However, under the same process, the arrangement density of the mask pattern also affects the quality of the pattern, which leads to distortion of the pattern, and the current commonly used monitoring marks cannot fully monitor the problem.
Disclosure of Invention
The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.
The present disclosure provides a mask and a mask quality test method.
In a first aspect of the present disclosure, a mask is provided, the mask includes an exposure area and a non-exposure area, the exposure area is provided with a main pattern, the non-exposure area is provided with at least one pattern density monitoring mark, the pattern density monitoring mark includes a measurement pattern and a density filling pattern surrounding the measurement pattern;
the density of the density filling patterns in at least one pattern density monitoring mark is matched with the density of the main patterns, and the deviation of the actual size and the target size of the measuring patterns in the pattern density monitoring mark is used for monitoring the quality of the mask.
According to some embodiments of the present disclosure, the graphic density monitoring indicia includes a plurality of first graphic density monitoring indicia;
in each first pattern density monitoring mark, the measurement pattern comprises a plurality of first pattern units which are sequentially arranged along a first direction, and the shape of each first pattern unit comprises at least one of a bar shape, a trapezoid shape and an L shape;
and in the first pattern density monitoring marks, the density of each density filling pattern is different, and the density of the density filling pattern ranges from 5% to 85%.
According to some embodiments of the present disclosure, the density of each of the density-filled patterns in the plurality of first pattern density-monitoring marks differs by 10%.
According to some embodiments of the present disclosure, the first graphic units are bar-shaped, the width of each first graphic unit is the same, and the distance between the center lines of every two adjacent first graphic units is equal;
the first direction is a width direction of the first graphic unit, and a center line of the first graphic unit extends along a length direction of the first graphic unit.
According to some embodiments of the present disclosure, the first graphic element has a width dimension of 125nm-130nm; and/or the number of the groups of groups,
the distance between the central lines of two adjacent first graph units is 295nm-300nm.
According to some embodiments of the present disclosure, the graphic density monitoring indicia further comprises at least one second graphic density monitoring indicia;
in the second pattern density monitoring mark, the measurement pattern comprises a plurality of second pattern units which are arranged in an array, and the shape of each second pattern unit comprises at least one of a circle, a square, a regular pentagon and a regular hexagon;
The density of the density-filled patterns in the second pattern density monitoring marks ranges from 65% to 75%.
According to some embodiments of the disclosure, the second graphic units are square in shape, the width of each second graphic unit is the same, and the distances between the center points of every two adjacent second graphic units are equal.
According to some embodiments of the present disclosure, the second graphic element has a width dimension of 150nm-155nm; and/or the number of the groups of groups,
the distance between the center points of two adjacent second graph units is 305nm-310nm.
In a second aspect of the present disclosure, there is provided a mask quality testing method, applicable to the mask provided in the first aspect of the present disclosure, the method including:
determining a target density filling pattern matched with the density of the main pattern in the exposure area in the density filling pattern of at least one pattern density monitoring mark arranged in the non-exposure area;
acquiring the actual size of a measurement pattern in the pattern density monitoring mark corresponding to the target density filling pattern, and calculating the difference between the actual size and the target size of the measurement pattern;
when the difference value is within the error allowable range, determining that the quality of the mask plate is qualified;
Acquiring a first technological parameter for manufacturing the mask;
and establishing a corresponding relation between the concentration of the main graph and the first technological parameter to form a process database.
According to some embodiments of the present disclosure, the reticle quality testing method further includes:
when the difference value exceeds the error allowable range, determining that the quality of the mask plate is unqualified;
correcting the technological parameters for manufacturing the mask plate with unqualified quality until the quality of the corrected mask plate manufactured and formed by the corrected second technological parameters is qualified;
and establishing a corresponding relation between the second technological parameter and the concentration degree of the main pattern in the corrected mask plate to form a process database.
In the mask and the mask quality testing method, at least one pattern density monitoring mark is arranged in the non-exposure area of the mask, the density of the density filling pattern in the pattern density monitoring mark is matched with the density of the main pattern in the exposure area, so that the deviation between the actual size and the target size of the measured pattern in the pattern density monitoring mark can be compared, the size deviation of the distribution density degree of the main pattern received pattern can be monitored, the quality of the mask is determined, the mask with defects is prevented from being adopted for photoetching, and the risk of cost loss is reduced.
Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the embodiments of the disclosure. In the drawings, like reference numerals are used to identify like elements. The drawings, which are included in the description, are some, but not all embodiments of the disclosure. Other figures can be obtained from these figures without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a reticle structure according to an exemplary embodiment.
FIG. 2 is a schematic diagram of a graphical density monitoring marker, according to an example embodiment.
FIG. 3 is a schematic diagram illustrating a plurality of first graphical density monitoring marks, according to an example embodiment.
FIG. 4 is a schematic diagram illustrating a measurement pattern in a first pattern density monitoring mark according to an exemplary embodiment.
FIG. 5 is a schematic diagram of a second graphical density monitoring marker, according to an example embodiment.
FIG. 6 is a schematic diagram illustrating a measurement pattern in a second pattern density monitoring mark, according to an example embodiment.
FIG. 7 is a schematic diagram of a graphical density monitoring marker, according to another exemplary embodiment.
FIG. 8 is a schematic diagram of a first linear monitoring tag, according to an example embodiment.
Fig. 9 is a schematic diagram of a second linear monitoring marker, shown according to an exemplary embodiment.
Fig. 10 is a schematic diagram of a first proximity effect monitoring tag, according to an example embodiment.
Fig. 11 is a schematic diagram of a second proximity effect monitoring tag, according to an example embodiment.
FIG. 12 is a flowchart illustrating a reticle quality testing method according to an example embodiment.
Reference numerals illustrate:
100. masking plate; 101. an exposure region; 102. a non-exposure region; 10. a main pattern; 20. a pattern density monitoring mark; 201. density filling patterns; 202. measuring a graph; 21. a first pattern density monitoring mark; 211. a first density filled pattern; 212. a first measurement pattern; 2121. a first graphic unit; 22. a second pattern density monitoring mark; 221. a second density filled pattern; 222. a second measurement pattern; 2221. a second graphic unit; 30. linear monitoring of the markers; 31. a first linear monitoring tag; 311. a third graphic unit; 32. a second linear monitoring tag; 321. a fourth graphic unit; 40. a proximity effect monitoring marker; 41. a first proximity effect monitoring tag; 410a, a first set of marks; 410b, a second set of indicia; 410c, a third set of markers; 411. a fifth graphic unit; 42. a second proximity effect monitoring tag; 420a, a fourth set of indicia; 420b, fifth set of markers; 420c, a sixth set of markers; 421. and a sixth graphic unit.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be arbitrarily combined with each other.
The mask plate is provided with a pattern structure for forming an integrated circuit, and when an exposure process of a photoetching process is carried out, light irradiates the mask plate, so that the light is penetrated or shielded at a specific position, and a pattern is defined on a wafer. Along with the miniaturization of critical dimensions (Critical Dimension, CD), the pattern lines on the mask become thinner, the area and complexity of the pattern become larger, and the quality of the pattern on the mask needs to be monitored to reduce the cost waste.
Currently, a monitoring mark is usually arranged in a non-exposure area of a mask, the monitoring mark comprises patterns with various width sizes so as to monitor the width sizes of the patterns in the exposure area of the mask, and meanwhile, pattern groups with different pitches are also arranged in the monitoring mark so as to monitor the width sizes of the patterns in the exposure area under the influence of an optical proximity effect. However, under the same process, the arrangement density of the mask pattern also affects the quality of the pattern, which leads to distortion of the pattern, and the current commonly used monitoring marks cannot fully monitor the problem.
In view of this, the present disclosure provides a mask, by setting at least one pattern density monitoring mark in a non-exposure area of the mask, the density of a density filling pattern in the pattern density monitoring mark is matched with the density of a main pattern in an exposure area, so that the deviation between the actual size and the target size of a measurement pattern in the pattern density monitoring mark can be compared, so as to monitor the size deviation of the distribution density of the main pattern by the pattern, thereby determining the quality of the mask, avoiding photolithography by using the mask with defects, and reducing the risk of cost loss.
The disclosure is described below with reference to the drawings and specific embodiments. Exemplary embodiments of the present disclosure provide a Mask, as shown in fig. 1, fig. 1 is a schematic structural diagram of a Mask, which is shown in an exemplary embodiment, and Mask 100 may be a binary Mask or a Phase Shift Mask (PSM). The mask 100 includes an exposure area 101 and a non-exposure area 102, wherein the exposure area 101 is used for setting an integrated circuit pattern, i.e., a main pattern 10, formed on a wafer after an exposure process. When the exposure process is performed by using the mask 100, the pattern in the non-exposure area 102 is not exposed, that is, the pattern disposed in the non-exposure area 102 is not formed on the wafer. The non-exposure area 102 is generally used for setting a monitor Mark (monitor Mark) to monitor the quality of the main pattern 10 in the exposure area 101 of the mask 100 before the mask 100 is exposed, i.e. monitor the quality of the mask 100, so as to avoid forming a defective main pattern 10 on a wafer, thereby avoiding economic loss.
In this embodiment, as shown in fig. 1 and 2, the non-exposure area 102 is provided with one or more pattern density monitoring marks 20, and the pattern density monitoring marks 20 include a measurement pattern 202 and a density filling pattern 201 surrounding the measurement pattern 202. The density filling pattern 201 is a pattern group with a certain pattern density, and the density filling pattern 201 may include a plurality of pattern units, where the density may be a ratio of a total area of the plurality of pattern units to an area of the mask occupied by the density filling pattern 201. The pattern units in the density filling pattern 201 may be regular shapes or irregular shapes such as bars, trapezoids, L-shapes, squares, circles, waves, etc., and the size of the pattern units, the arrangement mode of a plurality of pattern units, and the interval between two adjacent pattern units are not limited, as long as the density of the density filling pattern 201 meets the requirement.
The measurement pattern 202 in the pattern density monitoring mark 20 is surrounded by the density filling pattern 201, i.e. the measurement pattern 202 is surrounded by a pattern group having a certain concentration. In the design layout used to form the pattern density monitoring marks 20 on reticle 100, metrology patterns 202 in the design layout are also surrounded by density filling patterns 201. The measurement patterns 202 may include one or more of circular, bar, wave, trapezoid, L-shape, square, etc. and other regular or irregular patterns, and the pattern shape of the measurement patterns 202 may be matched with one or more pattern shapes of the main patterns 10 to measure the distortion degree of the patterns having the same pattern shape as the measurement patterns 202 in the main patterns 10 formed on the mask 100, i.e. to monitor the quality of the mask 100.
In the process of manufacturing the mask 100, the design layout for forming the mask 100 is transferred to a lithography machine, the lithography machine exposes the blank mask by using a laser/electron beam direct writing mode to form the design layout on the blank mask, and then the blank mask with the patterns is subjected to the procedures of developing, etching, demolding, cleaning and the like, so that the mask 100 is obtained. In the process of exposing the blank mask to transfer the design layout to the blank mask, since the measurement patterns 202 in the design layout of the pattern density monitoring marks 20 are also surrounded by the density filling patterns 201, and the density filling patterns 201 have a certain concentration, the light of the lithography machine forming the measurement patterns 202 is easily affected by the light of forming the density filling patterns 201, resulting in distortion of the shape or size of the measurement patterns 202.
When the non-exposure area 102 is provided with a pattern density monitoring mark 20, the density of the density filling pattern 201 in the pattern density monitoring mark 20 matches the density of the main pattern 10, i.e., the density is the same, or the difference between the two is smaller than a preset threshold. Since the pattern shape in the metrology pattern 202 may be matched to one or more pattern shapes in the master pattern 10, the metrology pattern 202 in the pattern density monitoring mark 20 may feed back the degree of influence of the pattern density in the master pattern 10 on the pattern.
Because each mask 100 can only bear the pattern corresponding to a certain structural layer in the semiconductor structure, the structures of different structural layers are different, i.e. the pattern layout, pattern shape and pattern density in the main pattern 10 in different structural layers are different, therefore, the non-exposure area 102 can be provided with a plurality of pattern density monitoring marks 20 so as to meet the requirements of different structural layers. When the non-exposure area 102 is provided with a plurality of pattern density monitoring marks 20, the density of the density filling pattern 201 in at least one pattern density monitoring mark 20 matches the density of the main pattern 10, since the pattern shape in the measurement pattern 202 may match one or several pattern shapes in the main pattern 10, so that the measurement pattern 202 in the pattern density monitoring mark 20 matching the main pattern 10 may monitor the quality condition of the main pattern 10.
Since the density of the density-filled patterns 201 in the pattern density monitoring marks 20 matches the density of the master pattern 10, and the pattern shape of the metrology patterns 202 may match one or more pattern shapes in the master pattern 10. In the manufactured mask 100, the actual size of the measurement pattern 202 is measured, the actual size of the measurement pattern 202 is compared with a preset target size, and deviation between the actual size and the target size is determined, so that the distortion degree of the main pattern 10 is measured, and the quality of the mask 100 is further judged. The pattern density monitoring mark 20 arranged in the non-exposure area 102 of the mask 100 provided by the disclosure can monitor the size deviation of the main pattern 10 caused by the arrangement density degree of patterns, and make up the defect of the monitoring mark in the prior art, so as to further control the quality of the mask, thereby reducing the risk of cost loss.
In an exemplary embodiment, referring to fig. 1 to 4, the pattern density monitoring mark 20 includes a plurality of first pattern density monitoring marks 21, and the measurement patterns in the first pattern density monitoring marks 21 are defined as first measurement patterns 212, and in each first pattern density monitoring mark 21, a plurality of first pattern units 2121 in the first measurement patterns 212 may be in a strip shape (line), for example, may include one or more of a strip shape, a trapezoid shape, an L shape, and may further include a wave shape, a zigzag shape, and the like, and the first pattern units 2121 are exemplarily shown as a strip shape in fig. 3. The plurality of first graphic units 2121 in the first measurement graphic 212 may be sequentially arranged along a first direction, which may be any direction, for example, an X direction or a Y direction in fig. 3, so long as the plurality of first graphic units 2121 are sequentially arranged along the first direction, which is exemplarily shown as the X direction in fig. 3. The spacing between adjacent two first graphic units 2121 may be the same or different in the first direction. The first pattern density monitoring mark 21 may monitor a dimensional deviation of a pattern having a long shape, for example, at least one of a bar shape, a trapezoid shape, and an L shape, in the main pattern 10.
The density filling pattern in the first pattern density monitoring mark 21 is defined as a first density filling pattern 211, and the density of each first density filling pattern 211 is different among the plurality of first pattern density monitoring marks 21 as shown with reference to fig. 3. So that when the plurality of first pattern density monitoring marks 21 are disposed in the non-exposure area 102, each of the first density filling patterns 211 can meet the requirement of the density of the main pattern 10 in different structural layers, so that the first density filling pattern 211 of at least one of the plurality of first pattern density monitoring marks 21 can be matched with the density of the main pattern 10, thereby realizing good monitoring of the quality condition of the main pattern 10 by the pattern density monitoring marks 20. Of course, it is understood that each of the first metrology patterns 212 may be identical in the plurality of first pattern density monitoring marks 21.
Illustratively, the extent of the density of the first density-filled patterns 211 in the plurality of first pattern density monitoring marks 21 may be determined based on the arrangement density of the elongated patterns in the main pattern 10 in the different structural layers. In some examples, the density of the first density filling pattern 211 may range from 5% to 85%, for example, the density of the first density filling pattern 211 in one first pattern density monitoring mark 21 is 5%, the density of the first density filling pattern 211 in another first pattern density monitoring mark 21 is 45%, the density of the first density filling pattern 211 in another first pattern density monitoring mark 21 is 85%, and so on.
In the mask manufacturing process, when the main pattern 10 of the manufactured mask 100 has pattern distortion due to the pattern arrangement density, the pattern arrangement density of the main pattern 10 is adjusted so that the pattern of the main pattern 10 reaches the preset specification. In determining the difference in the density of each of the first density-filled patterns 211 in the plurality of first pattern density monitoring marks 21, the determination may be made based on the minimum adjustable degree in adjusting the density of the elongated patterns in the main pattern 10 during reticle manufacturing. In this way, the density of at least one first density filling pattern 211 in the plurality of first pattern density monitoring marks 21 can be matched with the density of the main pattern 10, so that the pattern density monitoring marks 20 can well monitor the quality condition of the main pattern 10 under various conditions. For example, the minimum adjustable degree in adjusting the density of the elongated patterns in the main pattern 10 may be, for example, a value of 1%, 5%, 8%, 10%, or the like, that is, the difference in the density of each of the first density filling patterns 211 may be a value of 1%, 5%, 8%, 10%, or the like.
In some possible embodiments, when the difference in the densities of the first density filling patterns 211 is 10%, since the densities of the plurality of first density filling patterns 211 may range from 5% to 85%, in one example, the densities of the respective first density filling patterns 211 may be 5%, 15%, 25%, 35%, 45%, 55%, 65%, 75%, 85%, respectively, in the plurality of first pattern density monitoring marks 21. In another example, the density of each first pattern density monitoring mark 21 may be 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80% of the density of each first density filling pattern 211.
In some possible embodiments, referring to fig. 3 and 4, in the first measurement patterns 212 of each first pattern density monitoring mark 21, each first pattern unit 2121 is shaped as a bar. The first direction in which the plurality of first graphic units 2121 are sequentially arranged is the width direction of the first graphic unit 2121, and the width dimension d1 of each of the plurality of first graphic units 2121 is equal. Compared with the pattern with larger line width, the pattern with smaller line width is more likely to be distorted due to the fluctuation of the process parameters, and the width d1 of the first pattern unit 2121 can be the minimum line width of the strip pattern controllable in the mask manufacturing process, so that the first pattern density monitoring mark 21 corresponding to the first pattern unit 2121 is more sensitive to the quality condition of the main pattern 10. Illustratively, the width dimension d1 of the first graphic element 2121 may be any value between 125nm and 130 nm. In one example, the width dimension d1 of the first graphic element 2121 may be 128nm.
In the first measurement pattern 212, the distance d2 between the center lines of every two adjacent first pattern units 2121 is equal, and the center line of the first pattern unit 2121 extends along the length direction of the first pattern unit 2121. In the first measurement pattern 212 shown in fig. 4, the width direction of the first pattern units 2121 is the X direction, the length direction of the first pattern units 2121 is the Y direction, and the center line of each first pattern unit 2121 is a line passing through the center of the first pattern unit 2121 and extending in the Y direction. The distance d2 may be a minimum distance controllable by the stripe pattern in the mask manufacturing process, so that the first pattern density monitoring mark 21 corresponding to the first pattern unit 2121 is more sensitive to the quality condition of the main pattern 10. Illustratively, the spacing d2 between the centerlines of adjacent two first graphics units 2121 may be any value between 295nm-300 nm. In one example, the spacing d2 may be 296nm.
In one exemplary embodiment, as shown in connection with fig. 1, 5, and 6, patterned density monitoring marks 20 further include one or more second patterned density monitoring marks 22 in non-exposed region 102 of reticle 100. The measurement patterns in the second pattern density monitoring marks 22 are defined as second measurement patterns 222, and in each of the second pattern density monitoring marks 22, a plurality of second pattern units 2221 in the second measurement patterns 222 may be hole-shaped (hole), and the second pattern units 2221 may include, for example, one or more of circles, squares, regular pentagons, and regular hexagons, and the second pattern units 2221 are exemplarily shown as square-shaped patterns in fig. 5. The plurality of second pattern units 2221 in the second measurement pattern 222 are arranged in an array, and the distances between two adjacent second pattern units 2221 may be the same or different. The first pattern density monitoring mark 21 may monitor a dimensional deviation of at least one pattern having a hole shape, for example, a shape of a circle, a square, a regular pentagon, or a regular hexagon, in the main pattern 10.
The density filling pattern in the second pattern density monitoring mark 22 is defined as a second density filling pattern 221, and the range of the density of the second density filling pattern 221 in the second pattern density monitoring mark 22 can be determined based on the arrangement density of the hole-like patterns in the main pattern 10 in the different structural layers. The arrangement density of the hole patterns in the main pattern 10 is generally between 65% and 75%, and thus, the density of the second density filling pattern 221 may be set in the range of 65% to 75%. When the plurality of second pattern density monitoring marks 22 are provided, the densities of the second density filling patterns 221 are different, so that the second density filling patterns 221 can meet the demands of the densities of the main patterns 10 in different structural layers, and the pattern density monitoring marks 20 can monitor the quality condition of the main patterns 10 well. The difference between the densities of the second density filling patterns 221 may be determined based on the minimum adjustable degree when the densities of the hole patterns in the main pattern 10 are adjusted during the reticle manufacturing process. When only one second pattern density monitoring mark 22 is provided, the density of the second density filling pattern 221 may be any value between 65 and 75%, for example, may be 70%.
In some possible embodiments, referring to fig. 5 and 6, in the second pattern density monitoring mark 22, the shape of the second pattern unit 2221 in the second measurement pattern 222 is square, and the width dimension d3 of each second pattern unit 2221 is equal. Compared with the larger width pattern, the smaller width pattern is more susceptible to distortion caused by fluctuation of the process parameters, and the width dimension d3 of the second pattern unit 2221 can be the minimum width of the square pattern controllable in the mask manufacturing process, so that the second pattern density monitoring mark 22 corresponding to the second pattern unit 2221 is more sensitive to monitor the quality condition of the main pattern 10. Illustratively, the width dimension d3 of the second graphic element 2221 may be any value between 150nm-155 nm. In one example, the width dimension d3 of the second graphic element 2221 may be 152nm.
In the second measurement chart 222, the distance d4 between the center points of every two adjacent second chart units 2221 is equal, and the center point of the second chart unit 2221 is the intersection point of two diagonal lines of the second chart unit 2221. The distance d4 may feed back the distance between two adjacent second pattern units 2221, and compared with the pattern having a larger distance, the pattern having a smaller adjacent distance is more susceptible to distortion caused by fluctuation of the process parameters, and the distance d4 may be the minimum distance controllable by the square pattern in the mask manufacturing process, so that the second pattern density monitoring mark 22 corresponding to the second pattern unit 2221 is more sensitive to monitor the quality condition of the main pattern 10. Illustratively, the spacing d4 between the center points of adjacent two second graphic units 2221 may be any value between 305nm-310 nm. In one example, the spacing d4 may be 308nm.
In an exemplary embodiment, referring to fig. 1 and 7, in the pattern density monitoring marks 20, a plurality of first pattern density monitoring marks 21 and one or more second pattern density monitoring marks 22 are arranged in an array such that the overall size of the pattern density monitoring marks 20 is controlled within a certain range, preventing it from affecting the exposure of the main pattern 10 in the exposure area 101, and preventing the pattern density monitoring marks 20 from forming an exposure pattern on the wafer. Because each first pattern density monitoring mark 21 and each second pattern density monitoring mark 22 are independent of each other, there is no influence on each other, and the first pattern density monitoring marks 21 may be arranged in the order of the density of the first density filling patterns 211, or may be arranged randomly, and the positions of the second pattern density monitoring marks 22 may also be set randomly.
In one exemplary embodiment, as shown in connection with fig. 1, 8 and 9, the non-exposed area 102 may be provided with a linear monitor mark 30 that monitors the linearity of the pattern in addition to the pattern density monitor mark 20. The linear monitor mark 30 includes graphic elements having various width dimensions and various graphic shapes therein to monitor the various width dimensions and graphic shapes of the main graphic 10, further enhancing the accuracy of quality measurement.
The linear monitoring marks 30 may include a plurality of first linear monitoring marks 31, and the third graphic unit 311 in each of the first linear monitoring marks 31 may be bar-shaped as shown with reference to fig. 1 and 8. In each of the first linear monitor marks 31, a plurality of third graphic units 311 are sequentially arranged in the width direction of the third graphic units 311. The width dimension d5 of the third graphic units 311 in the same first linear monitor mark 31 is the same, and the distances between the center lines of two adjacent third graphic units 311 are the same. The width dimension d5 of the third graphic unit 311 in the different first linear monitor marks 31 is different, so that the plurality of first linear monitor marks 31 can meet the measurement requirement of the stripe patterns with different width dimensions in the main pattern 10. The width dimension d5 of the third graphic element 311 in the first plurality of linear monitoring marks 31 may be 80nm, 120nm, 160nm, 200nm, 240nm, 280nm, 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, 1200nm, respectively.
It will be appreciated that referring to fig. 1 and 9, the linear monitor mark 30 may further include a plurality of second linear monitor marks 32, and the fourth graphic unit 321 in each of the second linear monitor marks 32 may be square in shape. In each second linear monitoring mark 32, a plurality of fourth graphic units 321 are arranged in an array, the width dimensions d6 of the fourth graphic units 321 in the same second linear monitoring mark 32 are identical, and the distances between the center points of two adjacent fourth graphic units 321 are identical. The width dimension d6 of the fourth pattern unit 321 in the second different linear monitor marks 32 is different, so that the second plurality of linear monitor marks 32 can meet the measurement requirement of square patterns with different width dimensions in the main pattern 10. The width dimension d6 of the fourth graphical element 321 in the second plurality of linear monitoring marks 32 may be 80nm, 120nm, 160nm, 200nm, 240nm, 280nm, 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, 1200nm, respectively.
In the manufacturing process of the mask, when the blank mask is exposed to transfer the design layout to the blank mask, the pattern size of the main pattern formed on the mask is easily affected by the distance between the two patterns to generate distortion. For example, when the distance between two adjacent patterns is relatively close, the optical diffraction effect of the light rays is relatively obvious when the photoetching machine exposes, so that the patterns formed on the mask plate are distorted, and the shape and the size of the patterns deviate from the preset shape and size. Thus, in one exemplary embodiment, as shown in connection with fig. 1, 8-11, the non-exposed region 102 may be provided with a proximity effect monitoring mark 40 in addition to the pattern density monitoring mark 20 and the linear monitoring mark 30 to monitor the quality impact of the pattern proximity effect in the main pattern 10 on the width dimension of the pattern.
Referring to fig. 1 and 10, the proximity effect monitoring mark 40 may include a plurality of first proximity effect monitoring marks 41, and the fifth graphic unit 411 in each of the first proximity effect monitoring marks 41 may have a bar shape. In each of the first proximity effect monitoring marks 41, a plurality of fifth graphic units 411 are sequentially arranged in the width direction of the fifth graphic units 411. According to the width dimension of the fifth graphic unit 411 in the first proximity effect monitoring marks 41, a plurality of first proximity effect monitoring marks 41 corresponding to the fifth graphic unit 411 having the same width dimension are defined as the same mark group. In the same mark group, for example, the width dimensions of the fifth graphic elements 411 in the plurality of first proximity effect monitoring marks 41 are the same for the first mark group 410a, and the distances d7 between the center lines of the adjacent two fifth graphic elements 411 are different for different first proximity effect monitoring marks 41 in the first mark group 410 a. In this way, the proximity effect monitoring mark 40 can monitor the degree to which the stripe patterns having various width dimensions and pattern pitches in the main pattern 10 are affected by the quality of the pattern proximity effect.
The width dimensions of the fifth graphic element 411 in the first proximity effect monitoring mark 41 may be 120nm, 260nm, 400nm, respectively. When the width dimension of the fifth graphic element 411 in the first marker set 410a is 120nm, d7 in the plurality of first proximity effect monitoring markers 41 may be 280nm, 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively. When the width dimension of the fifth graphic element 411 in the second marker set 410b is 260nm, d7 in the plurality of first proximity effect monitoring markers 41 may be 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively. When the width dimension of the fifth graphic element 411 in the third marker set 410c is 400nm, d7 in the plurality of first proximity effect monitoring markers 41 may be 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively.
Referring to fig. 1 and 11, the proximity effect monitoring mark 40 may further include a plurality of second proximity effect monitoring marks 42, and the sixth graphic unit 421 in each of the second proximity effect monitoring marks 42 may be square in shape, and the plurality of sixth graphic units 421 in each of the second proximity effect monitoring marks 42 may be arrayed. According to the width dimensions of the sixth graphic units 421 in the second proximity effect monitoring marks 42, a plurality of second proximity effect monitoring marks 42 corresponding to the sixth graphic units 421 having the same width dimensions are defined as the same mark group. The width dimensions of the sixth graphical element 421 in the plurality of second proximity effect monitoring marks 42 in the same mark group, for example, are the same for the fourth mark group 420a, and the spacing d8 between the center points of two adjacent sixth graphical elements 421 is different for different second proximity effect monitoring marks 42 in the fourth mark group 420 a. In this way, the proximity effect monitoring mark 40 can monitor the degree to which square-shaped patterns having various width dimensions and pattern pitches in the main pattern 10 are affected by the quality of the pattern proximity effect.
The width dimensions of the sixth pattern element 421 in the second proximity effect monitoring mark 42 may be 120nm, 260nm, 400nm, respectively. When the width dimension of the sixth graphic element 421 in the fourth marker set 420a is 120nm, d8 in the plurality of second proximity effect monitoring markers 42 can be 280nm, 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively. When the width dimension of the sixth graphic element 421 in the fifth marker set 420b is 260nm, d8 in the plurality of second proximity effect monitoring markers 42 can be 320nm, 360nm, 400nm, 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively. When the width dimension of the sixth pattern unit 421 in the sixth mark group 420c is 400nm, d8 in the plurality of second proximity effect monitoring marks 42 may be 480nm, 560nm, 640nm, 720nm, 800nm, 900nm, 1000nm, respectively.
Illustratively, the pattern density monitoring marks 20, the linear monitoring marks 30 and the proximity effect monitoring marks 40 may be arranged in an array, and the resulting total monitoring marks of the array may be disposed in the non-exposure area 102, so that the total monitoring marks may monitor the degree of influence of the pattern density on the pattern size deviation of the main pattern 10, the degree of influence of the pattern proximity effect on the pattern size deviation of the main pattern 10, and the degree of dimension deviation of patterns of various width dimensions in the main pattern 10. It can be understood that the pattern density monitoring marks 20, the linear monitoring marks 30 and the proximity effect monitoring marks 40 in the total monitoring marks are arranged in an array, so that the overall size of the total monitoring marks can be controlled within a certain range, the total monitoring marks are prevented from affecting the exposure of the main pattern 10 in the exposure area 101, and the total monitoring marks are prevented from forming exposure patterns on the wafer. It is to be understood that the pattern density monitoring marks 20, the linear monitoring marks 30, and the proximity effect monitoring marks 40 in the present disclosure may be light-transmissive patterns or light-opaque patterns on the reticle 100, which is not limited by the present disclosure.
In an exemplary embodiment, the present disclosure further provides a mask quality testing method, which is used for testing the quality of the mask shown in the foregoing embodiment, referring to fig. 12, fig. 12 is a flowchart of the mask quality testing method shown in an exemplary embodiment, where the mask quality testing method includes the following steps:
step S101, determining a target density filling pattern matched with the density of a main pattern in an exposure area in density filling patterns of at least one pattern density monitoring mark arranged in a non-exposure area;
step S102, obtaining the actual size of the measurement pattern in the pattern density monitoring mark corresponding to the target density filling pattern, and calculating the difference between the actual size and the target size of the measurement pattern;
step S103, when the difference value is within the error allowable range, determining that the quality of the mask plate is qualified;
step S104, obtaining first technological parameters for manufacturing a mask;
step 105, establishing a corresponding relation between the density of the main pattern and the first process parameter to form a process database.
In step S101, since the non-exposure area of the mask is provided with one or more pattern density monitoring marks, each pattern density monitoring mark includes a density filling pattern having a certain density. The mask plate used for testing is the mask plate which is actually manufactured, the mask plate is placed in a detection machine of a scanning electron microscope (Scanning Electron Microscope, SEM), and main patterns in the mask plate are scanned by adopting the SEM so as to detect the density of the main patterns. Meanwhile, SEM can be adopted to scan a non-exposure area in the mask plate so as to determine the density of density filling patterns in a plurality of pattern density monitoring marks in the non-exposure area. And when the density of a certain density filling pattern is the same as that of the main pattern or the difference value between the density filling pattern and the main pattern is smaller than a preset threshold value, taking the density filling pattern as a target density filling pattern.
In step S102, since the measurement pattern in the pattern density monitoring mark is surrounded by the density filling pattern, and the density filling pattern has a certain concentration, the light beam forming the measurement pattern by the lithography machine is easily affected by the light beam forming the density filling pattern, so that the shape or size of the measurement pattern is distorted.
Since the pattern density monitoring mark includes the density filling pattern and the measurement pattern surrounded by the density filling pattern, after determining the target density filling pattern, determining the pattern density monitoring mark where the target density filling pattern is located as the target pattern density monitoring mark. Because the density of the target density filling patterns in the target pattern density monitoring marks is matched with the density of the main patterns, the measuring patterns in the target pattern density monitoring marks can be scanned by adopting SEM so as to measure and acquire the actual sizes of the measuring patterns. And comparing the actual size of the measured pattern with a preset target size formed on the mask plate, for example, performing difference calculation on the actual size and the target size to determine the difference value of the actual size and the target size. The difference value of the two can feed back the distortion degree of the measurement pattern, so that the distortion degree of the main pattern can be fed back.
In step S103, the error allowance threshold is a maximum allowance range of a difference between the actual size of the measurement pattern in the target pattern density monitoring mark and a preset target size when the mask accuracy is not affected. And comparing the difference value of the two with an error allowable threshold value to judge whether the quality of the mask is qualified or not. When the difference value of the two is larger than the error allowable threshold value, the main pattern is influenced by pattern arrangement density to generate larger distortion, the mask precision is influenced, and the mask plate cannot enter an exposure process for use. When the difference value of the two is within the error allowable threshold, the main pattern is not influenced by the pattern arrangement density to generate distortion, or the distortion generated by the influence of the pattern arrangement density on the main pattern is within the allowable range, and the quality of the mask is qualified and can be put into an exposure process for use.
In step S104, based on the difference in the densities of the main patterns in the mask, the lithography machine exposes the blank mask by using the design layout, so that certain process parameters, such as a light source, a light source wavelength, light intensity, exposure time, focal depth, and the like, used in exposure, are set or adjusted in the process of transferring the design layout to the blank mask. When the quality of the mask plate is determined to be qualified, the process parameters for manufacturing the mask plate with qualified quality can be obtained from the photoetching machine as first process parameters, and the first process parameters can be used as reference process parameters for subsequently manufacturing other mask plates with the same density as the main pattern in the mask plate.
In step S105, a correspondence between the density of the main pattern in the mask with qualified quality and the first process parameter may be established, for example, a pairing flag is set, or a corresponding linked list is set to establish a correspondence, and the data with the correspondence is stored to form a process database. It can be understood that in the manufacturing process and the quality testing process of the mask, the process parameters of a plurality of masks with qualified quality and different densities of the main patterns can be obtained, and the corresponding relationship between the process parameters and the densities of the main patterns in each mask is established, so that the data volume in the process database meets the requirement.
When the mask is manufactured subsequently, the target density of the main graph in the mask can be determined, and traversing and searching are performed in a process database based on the target density, so that the process parameters corresponding to the target density can be determined, and the process parameters can provide process reference for the manufacturing process of the mask. Therefore, the method is beneficial to improving the process level of the mask plate manufacturing process, improving the quality yield of the mask plate and shortening the manufacturing period of the mask plate.
In one exemplary embodiment, the reticle quality testing method comprises the following steps:
step S201, determining a target density filling pattern matched with the density of a main pattern in an exposure area in the density filling patterns of at least one pattern density monitoring mark arranged in a non-exposure area;
step S202, obtaining the actual size of the measurement pattern in the pattern density monitoring mark corresponding to the target density filling pattern, and calculating the difference between the actual size and the target size of the measurement pattern;
step S203, when the difference value exceeds the error allowable range, determining that the quality of the mask plate is unqualified;
step S204, correcting the process parameters of the mask plate with unqualified manufacturing quality until the quality of the corrected mask plate formed by the second process parameter manufacturing obtained by correction is qualified;
step S205, establishing a corresponding relation between the second process parameter and the density of the main pattern in the corrected mask plate to form a process database.
In this embodiment, the steps S201 to S202 are the same as or similar to the steps S101 to S102 in the above embodiment, and are not described herein.
In step S203, the error allowance threshold is a maximum allowance range of a difference between the actual size of the measurement pattern in the target pattern density monitoring mark and a preset target size when the mask accuracy is not affected. And comparing the difference value of the two with an error allowable threshold value to judge whether the quality of the mask is qualified or not. When the difference value of the two is larger than the error allowable threshold value, the main pattern is influenced by pattern arrangement density to generate larger distortion, the mask precision is influenced, and the mask plate cannot enter an exposure process for use.
In step S204, since the lithography machine exposes the blank mask with the design layout, certain process parameters, such as light source, light source wavelength, light intensity, exposure time, focal depth, etc., used for exposure are set or adjusted in the process of transferring the design layout to the blank mask. When the quality of the mask plate is determined to be unqualified, one or more parameters of the technological parameters for manufacturing the mask plate in the photoetching machine can be corrected until the quality of the manufactured corrected mask plate is qualified. In the actual production process, the process of adjusting the process parameters may need to be repeated for a plurality of times to enable the quality of the corrected mask to be qualified, and at this time, the process parameters of the photoetching machine for manufacturing the corrected mask with qualified quality are taken as the second process parameters.
In one example, to reduce the manufacturing cost of the mask, when the quality of the mask is not acceptable, a repair process may be performed on the mask to make the quality of the mask acceptable. For example, when the quality of the mask is unqualified and the actual size of the measured pattern is larger than the target size, it is indicated that the redundant pattern exists in the light-transmitting area of the mask, and the redundant pattern can be removed by using laser, so that the quality of the corrected mask obtained by repairing is qualified. When the quality of the mask is unqualified and the actual size of the measured pattern is smaller than the target size, the fact that the light transmittance exists in the non-light-transmitting area of the mask is indicated, and the non-light-transmitting area with the light transmittance can be repaired by adopting a Laser-induced chemical deposition method (Laser-induced Chemical Vapor Deposition, LICVD) so that the quality of the repaired corrected mask is qualified. In the actual production process, the repair process may need to be repeated for a plurality of times to enable the quality of the corrected mask to be qualified, and at this time, the photolithography machine can be used for manufacturing the process parameters of the corrected mask and the parameters adopted in the subsequent repair process together serve as second process parameters.
In step S205, the second process parameter may be used as a reference process parameter for subsequently manufacturing other reticles having the same density as the main pattern in the corrected reticle, or the second process parameter may function to provide a process reference. Therefore, the corresponding relation between the density of the main pattern in the corrected mask plate and the second process parameter, which is corrected and qualified, can be established, for example, the pairing mark is respectively set, or the corresponding linked list is set to establish the corresponding relation, and the data with the corresponding relation is stored to form the process database. Therefore, the method is beneficial to improving the process level of the mask manufacturing process, improving the quality yield of the mask, avoiding the repeated adjustment of the process parameters in the mask repairing process, and shortening the manufacturing period of the mask.
In this specification, each embodiment or implementation is described in a progressive manner, and each embodiment focuses on a difference from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
In the description of the present specification, descriptions of the terms "example," "exemplary embodiment," "some embodiments," "illustrative embodiments," "examples," and the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure.
In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present disclosure, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present disclosure.
It will be understood that the terms "first," "second," and the like, as used in this disclosure, may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another structure.
In one or more of the drawings, like elements are referred to by like reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, some well-known portions may not be shown. The structure obtained after several steps may be depicted in one figure for simplicity. Numerous specific details of the present disclosure, such as device structures, materials, dimensions, processing techniques and technologies, are set forth in the following description in order to provide a more thorough understanding of the present disclosure. However, as will be understood by those skilled in the art, the present disclosure may be practiced without these specific details.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present disclosure, and not for limiting the same; although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.
Claims (10)
1. The mask plate is characterized by comprising an exposure area and a non-exposure area, wherein the exposure area is provided with a main pattern, the non-exposure area is provided with at least one pattern density monitoring mark, and the pattern density monitoring mark comprises a measurement pattern and a density filling pattern surrounding the measurement pattern;
the density of the density filling patterns in at least one pattern density monitoring mark is matched with the density of the main patterns, and the deviation of the actual size and the target size of the measuring patterns in the pattern density monitoring mark is used for monitoring the quality of the mask.
2. The reticle of claim 1, wherein the pattern density monitoring marks comprise a plurality of first pattern density monitoring marks;
in each first pattern density monitoring mark, the measurement pattern comprises a plurality of first pattern units which are sequentially arranged along a first direction, and the shape of each first pattern unit comprises at least one of a bar shape, a trapezoid shape and an L shape;
and in the first pattern density monitoring marks, the density of each density filling pattern is different, and the density of the density filling pattern ranges from 5% to 85%.
3. The reticle of claim 2, wherein the density of each of the density-filled patterns in the plurality of first pattern density-monitoring marks differs by 10%.
4. The mask plate according to claim 2, wherein the first graphic units are bar-shaped, the width of each first graphic unit is the same, and the distance between the central lines of every two adjacent first graphic units is equal;
the first direction is a width direction of the first graphic unit, and a center line of the first graphic unit extends along a length direction of the first graphic unit.
5. The reticle of claim 4, wherein the first graphic element has a width dimension of 125nm-130nm; and/or the number of the groups of groups,
the distance between the central lines of two adjacent first graph units is 295nm-300nm.
6. The reticle of any one of claims 2 to 5, wherein the pattern density monitoring indicia further comprises at least one second pattern density monitoring indicia;
in the second pattern density monitoring mark, the measurement pattern comprises a plurality of second pattern units which are arranged in an array, and the shape of each second pattern unit comprises at least one of a circle, a square, a regular pentagon and a regular hexagon;
the density of the density-filled patterns in the second pattern density monitoring marks ranges from 65% to 75%.
7. The reticle of claim 6, wherein the second graphic units are square in shape, the width of each of the second graphic units is the same, and the distances between the center points of every two adjacent second graphic units are equal.
8. The reticle of claim 7, wherein the width dimension of the second graphic element is 150nm-155nm; and/or the number of the groups of groups,
The distance between the center points of two adjacent second graph units is 305nm-310nm.
9. A reticle quality testing method, suitable for a reticle according to any one of claims 1 to 8, comprising:
determining a target density filling pattern matched with the density of the main pattern in the exposure area in the density filling pattern of at least one pattern density monitoring mark arranged in the non-exposure area;
acquiring the actual size of a measurement pattern in the pattern density monitoring mark corresponding to the target density filling pattern, and calculating the difference between the actual size and the target size of the measurement pattern;
when the difference value is within the error allowable range, determining that the quality of the mask plate is qualified;
acquiring a first technological parameter for manufacturing the mask;
and establishing a corresponding relation between the concentration of the main graph and the first technological parameter to form a process database.
10. The reticle quality testing method of claim 9, further comprising:
when the difference value exceeds the error allowable range, determining that the quality of the mask plate is unqualified;
Correcting the technological parameters for manufacturing the mask plate with unqualified quality until the quality of the corrected mask plate manufactured and formed by the corrected second technological parameters is qualified;
and establishing a corresponding relation between the second technological parameter and the concentration degree of the main pattern in the corrected mask plate to form a process database.
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| CN202310897865.1A CN116819883A (en) | 2023-07-20 | 2023-07-20 | Mask and mask quality testing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117111398A (en) * | 2023-10-23 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Method and system for monitoring deviation of photomask manufacturing process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117111398A (en) * | 2023-10-23 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Method and system for monitoring deviation of photomask manufacturing process |
| CN117111398B (en) * | 2023-10-23 | 2024-01-23 | 粤芯半导体技术股份有限公司 | Method and system for monitoring deviation of photomask manufacturing process |
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