CN116799108A - Manufacturing method of LED lamp bead and LED lamp bead - Google Patents

Manufacturing method of LED lamp bead and LED lamp bead Download PDF

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Publication number
CN116799108A
CN116799108A CN202310649146.8A CN202310649146A CN116799108A CN 116799108 A CN116799108 A CN 116799108A CN 202310649146 A CN202310649146 A CN 202310649146A CN 116799108 A CN116799108 A CN 116799108A
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China
Prior art keywords
chip
driving
pins
colloid
rgb
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CN202310649146.8A
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Chinese (zh)
Inventor
李�昊
李碧波
吴瑕
赵强
林远彬
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Hubei Xinying Photoelectric Co ltd
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Hubei Xinying Photoelectric Co ltd
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Priority to CN202310649146.8A priority Critical patent/CN116799108A/en
Publication of CN116799108A publication Critical patent/CN116799108A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention relates to a manufacturing method of an LED lamp bead and the LED lamp bead, which comprises the following steps: etching the shape of the required pin on the hard bottom plate; forming a metal pin electrode on the formed pin shape; performing secondary deposition on the hard bottom plate to form a metal deposition layer; placing a driving IC on the hard bottom plate, and electrically connecting the bottom pins of the driving IC with the corresponding metal deposition layers on the hard bottom plate; molding an insulating colloid on the surface of the hard bottom plate to enable the insulating colloid to cover the surface of the drive IC; and transferring the RGB chip onto the insulating colloid, covering the transparent colloid on the surfaces of the insulating colloid and the RGB chip, punching to expose the electrode pins of the RGB chip and the top pins of the drive IC, and electrically connecting the top pins of the drive IC with the corresponding electrode pins of the RGB chip through conductive metal arranged in the punching area. The invention can reduce or shorten the wiring, reduce the through holes on the hard bottom plate, reduce the manufacturing cost and not easily damage the hard bottom plate.

Description

Manufacturing method of LED lamp bead and LED lamp bead
Technical Field
The invention relates to the technical field of LED lamp beads, in particular to a manufacturing method of an LED lamp bead and the LED lamp bead.
Background
The Light-Emitting Diode (LED) has the characteristics of energy saving, environmental protection, safety, durability, high photoelectric conversion rate, strong controllability and the like, and is widely applied to the related fields of displays, automobile illumination, general illumination and the like. At present, the LED chip structure is mainly divided into a front mounting structure, a vertical structure and a flip-chip structure, and compared with the front mounting structure, the flip-chip structure has better heat dissipation capability, higher reliability and longer service life and is more popular.
In the related art, at present, the driving chip and the RGB chip of the conventional LED lamp bead are respectively arranged on two sides of the lamp panel, so that the lamp panel is more in wiring, more through holes are needed, the manufacturing cost of the lamp panel is more expensive, the lamp panel with two-sided lighting parts is easier to damage, and the manufacturing mode of the conventional lamp bead is difficult to manufacture the small-size LED lamp bead.
Therefore, it is necessary to design a new manufacturing method of the LED lamp bead and the LED lamp bead to overcome the above problems.
Disclosure of Invention
The embodiment of the invention provides a manufacturing method of an LED lamp bead and the LED lamp bead, which are used for solving the problems that in the related art, more lamp panels are required to be routed, more through holes are required, the manufacturing cost of the lamp panels is high, the lamp panels with two-sided lighting parts are easier to damage, and the lamp beads with small sizes are difficult to manufacture.
In a first aspect, a method for manufacturing an LED lamp bead is provided, including the following steps: covering an optical mask on the hard bottom plate, and etching the optical mask to form a required pin shape; depositing metal on the formed pin shape, and dissolving out the optical mask outside the required pin shape to form a metal pin electrode; performing secondary deposition on the hard bottom plate to form a metal deposition layer suitable for placing the bottom pins of the drive IC on the surface of the metal pin electrode;
placing a drive IC on the hard bottom plate, and electrically connecting the bottom pins of the drive IC with the corresponding metal deposition layers on the hard bottom plate; molding an insulating colloid on the surface of the hard bottom plate to enable the insulating colloid to cover the surface of the drive IC; and transferring the RGB chip onto the insulating colloid, covering transparent colloid on the surfaces of the insulating colloid and the RGB chip, punching to expose electrode pins of the RGB chip and top pins of the drive IC, and electrically connecting the top pins of the drive IC with corresponding electrode pins of the RGB chip through conductive metal arranged in a punching area.
In some embodiments, the molding an insulating gel on the surface of the hard base plate to cover the surface of the driving IC includes: and (3) molding and covering a deep black insulating colloid on the top of the hard bottom plate to wrap the periphery of the driving IC by the insulating colloid, wherein the height of the insulating colloid is higher than the upper surface of the driving IC.
In some embodiments, the transferring the RGB chip onto the insulating colloid, covering the transparent colloid on the surfaces of the insulating colloid and the RGB chip, punching to expose electrode pins of the RGB chip and top pins of the driving IC, and electrically connecting the top pins of the driving IC with corresponding electrode pins of the RGB chip through conductive metal disposed in the punching area, including:
transferring all the RGB chips of the first quantity to the insulating colloid, and covering transparent colloid on the surfaces of the insulating colloid and the RGB chips;
punching holes at corresponding positions of the transparent colloid and the insulating colloid to expose electrode pins of the RGB chip and top pins of the driving IC;
and depositing conductive metal in the punching area to electrically connect the top pins of the driving IC with the corresponding electrode pins of the RGB chip.
In some embodiments, the punching holes at the corresponding positions of the transparent colloid and the insulating colloid to expose the electrode pins of the RGB chip and the top pins of the driving IC includes:
punching a connecting hole at the positive position of the R chip corresponding to the transparent colloid through laser, and punching connecting holes at the positions of the R+ pins of the top of the drive IC corresponding to the transparent colloid and the insulating colloid, so that the connecting holes at the positive position of the R chip are communicated with the connecting holes at the positions of the R+ pins of the top of the drive IC;
punching a connecting hole at the positive position of the G chip corresponding to the transparent colloid through laser, and punching connecting holes at the positions of the G+ pins of the top of the drive IC corresponding to the transparent colloid and the insulating colloid, so that the connecting holes at the positive position of the G chip are communicated with the connecting holes at the positions of the G+ pins of the top of the drive IC;
punching a connecting hole at the positive position of the B chip corresponding to the transparent colloid through laser, and punching connecting holes at the positions of the transparent colloid and the B+ pins of the insulating colloid corresponding to the top of the driving IC, so that the connecting holes at the positive position of the B chip are communicated with the connecting holes at the positions of the B+ pins of the top of the driving IC;
and connecting holes are drilled at the positions of the transparent colloid corresponding to the cathodes of the R chip, the G chip and the B chip, and connecting holes are drilled at the positions of the transparent colloid and the insulating colloid corresponding to the GND pins at the tops of the driving ICs, so that the connecting holes at the positions of the cathodes of the R chip, the G chip and the B chip are communicated with the connecting holes at the positions of the GND pins at the tops of the driving ICs.
In some embodiments, the transferring the RGB chip onto the insulating colloid, covering the transparent colloid on the surfaces of the insulating colloid and the RGB chip, punching to expose electrode pins of the RGB chip and top pins of the driving IC, and electrically connecting the top pins of the driving IC with corresponding electrode pins of the RGB chip through conductive metal disposed in the punching area, including:
transferring a first chip in the RGB chips to the insulating colloid and covering the first transparent colloid;
punching holes in the corresponding positions of the first transparent colloid and the insulating colloid to expose electrode pins of the first chip and corresponding top pins of the driving IC, and depositing conductive metal in the punching area to enable the electrode pins of the first chip to be electrically connected with the corresponding top pins of the driving IC;
transferring a second chip in the RGB chips onto the first transparent colloid and covering the second transparent colloid;
punching holes in the corresponding positions of the second transparent colloid, the first transparent colloid and the insulating colloid to expose electrode pins of the second chip and corresponding top pins of the driving IC, and depositing conductive metal in the punching area to enable the electrode pins of the second chip to be electrically connected with the corresponding top pins of the driving IC;
transferring a third chip in the RGB chip onto the second transparent colloid and covering the third transparent colloid;
punching holes in the corresponding positions of the third transparent colloid, the second transparent colloid, the first transparent colloid and the insulating colloid to expose electrode pins of the third chip and corresponding top pins of the driving IC, and depositing conductive metal in the punching area to enable the electrode pins of the third chip to be electrically connected with the corresponding top pins of the driving IC.
In a second aspect, there is provided an LED lamp bead, comprising:
the driving IC is packaged on the hard bottom plate through an insulating colloid, the bottom pins of the driving IC are electrically connected with corresponding metal pin electrodes on the hard bottom plate, and the insulating colloid covers the surface of the driving IC;
the RGB chip is packaged on the surface of the insulating colloid through the transparent colloid, the transparent colloid covers the surface of the RGB chip, a connecting hole is formed in the transparent colloid and the insulating colloid so as to expose electrode pins of the RGB chip and top pins of the driving IC, and conductive metal is arranged in the connecting hole and electrically connected with the top pins of the driving IC and the corresponding electrode pins of the RGB chip.
In some embodiments, the RGB chips are located on the same plane of the surface of the insulating colloid, and the R chip, the G chip, and the B chip in the RGB chips are arranged in a staggered manner.
In some embodiments, the R chip, the G chip, and the B chip in the RGB chip are stacked above the insulating gel, and the R chip, the G chip, and the B chip are different in size, so as to expose the light emitting layers of the R chip, the G chip, and the B chip.
In some embodiments, a metal deposition layer is disposed on a surface of the metal lead electrode, the metal deposition layer is electrically connected to the metal lead electrode, and the metal deposition layer is electrically connected to a bottom lead of the driving IC.
The technical scheme provided by the invention has the beneficial effects that:
the embodiment of the invention provides a manufacturing method of an LED lamp bead and the LED lamp bead, because a driving IC and an RGB chip are arranged on one side of a hard base plate, compared with the driving IC and the RGB chip which are respectively arranged on two sides of the lamp plate, the arrangement on the same side can reduce or shorten wiring, the wiring does not need to pass through the hard base plate, the driving IC and the RGB chip on the same side of the hard base plate can be directly and electrically connected, the through holes on the hard base plate can be reduced, the manufacturing cost is reduced, and the hard base plate is not easy to damage. In addition, the strength of the hard bottom plate is higher, and the metal pin electrode and the metal deposition layer are formed on the hard bottom plate to realize the electric connection with the driving IC, so that the LED lamp bead with small size can be manufactured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for manufacturing an LED lamp bead according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a bottom structure of a driving IC according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a hard base plate according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a driving IC mounted on a hard base plate according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a structure of a molding insulating gel on a surface of a driving IC according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an RGB chip placed on the surface of an insulating gel according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of an RGB chip surface covering transparent colloid according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a laser drilling structure according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a punching area provided with conductive metal according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of an LED lamp bead according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of an insulating gel surface-mounted B chip according to an embodiment of the present invention;
fig. 13 is a schematic diagram of a structure in which a surface of a B chip provided in an embodiment of the present invention is covered with a first transparent colloid and perforated;
FIG. 14 is a schematic side view of a hole punched at a corresponding position above a B chip according to an embodiment of the present invention;
FIG. 15 is a schematic view of the structure of the perforated area of FIG. 14 for depositing conductive metal;
FIG. 16 is a side view of FIG. 15;
fig. 17 is a schematic structural diagram of a G chip placed on a surface of a first transparent colloid according to an embodiment of the present invention;
fig. 18 is a schematic diagram of a structure of covering and punching a second transparent colloid on a surface of a G chip according to an embodiment of the present invention;
FIG. 19 is a schematic view of the structure of the perforated area of FIG. 18 for depositing conductive metal;
FIG. 20 is a side view schematic of FIG. 19;
FIG. 21 is a schematic diagram of a structure in which an R chip is disposed on a surface of a second transparent colloid and electrically connected through a conductive metal according to an embodiment of the present invention;
fig. 22 is a schematic structural diagram of an R chip provided in an embodiment of the present invention, where conductive metal is disposed in a corresponding hole punching area;
fig. 23 is a schematic structural diagram of an electrical connection between the whole RGB chip and the driving IC according to an embodiment of the present invention;
fig. 24 is a schematic structural diagram of a third transparent colloid surface molding matte film according to an embodiment of the present invention;
FIG. 25 is a side view schematic of FIG. 24;
fig. 26 is a schematic structural diagram of a B chip according to an embodiment of the present invention;
fig. 27 is a schematic structural diagram of a G chip according to an embodiment of the present invention;
fig. 28 is a schematic structural diagram of an R chip according to an embodiment of the present invention.
In the figure:
1. a hard base plate; 11. a metal pin electrode; 12. a metal deposition layer;
2. a driving IC; 21. a bottom pin; 22. a top pin;
3. an insulating colloid; 4. a transparent colloid; 41. a first transparent colloid; 42. a second transparent colloid; 43. a third transparent colloid;
5. a conductive metal; 6. a connection hole; 7. a metal pin; 8. an insulating layer; 9. and a light emitting layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a manufacturing method of an LED lamp bead and the LED lamp bead, which can solve the problems that in the related art, a lamp panel is more in wiring, more through holes are needed, the manufacturing cost of the lamp panel is more expensive, the lamp panels with two-sided lighting parts are easier to damage, and the lamp bead with small size is difficult to manufacture.
Referring to fig. 1, a method for manufacturing an LED lamp bead according to an embodiment of the present invention may include the following steps:
s1: an optical mask is covered on the hard base plate 1, and a required pin shape is etched on the optical mask.
S2: metal is deposited on the formed lead shape, and then an optical mask (i.e., unnecessary) outside the desired lead shape is dissolved to form the metal lead electrode 11, wherein the metal lead electrode 11 is made of a conductive metal, such as copper, nickel, gold, silver, etc., as shown in fig. 4. In depositing the metal, this may be performed by means of vacuum sputtering or electroplating.
S3: a secondary deposition may then be performed on the hard base plate 1, so that the surface of the metal pin electrode 11 forms a metal deposition layer 12 suitable for placing the bottom pins 21 of the driving IC2, as shown in fig. 5. The secondary deposition mode may be the same as the mode of depositing the metal pin electrode 11, that is, a layer of optical mask is covered on the hard base plate 1, the required shape is etched by photoetching, a layer of metal is deposited on the surface by vacuum sputtering or electroplating, and after the deposition is completed, the redundant (i.e. the shape is beyond the required shape) optical mask is dissolved, so as to form a layer of metal deposition layer 12. Each metal deposition layer 12 corresponds to each metal pin electrode 11 one by one, and the metal deposition layer 12 is electrically connected to the metal pin electrode 11, and the metal deposition layer 12 may be electrically connected to the corresponding bottom pin 21 of the driving IC 2. In the present embodiment, by forming the metal deposition layer 12 on the metal pin electrode 11, a metal layer suitable for placing the bottom pin 21 of the driving IC2 may be formed to achieve electrical connection of the bottom pin 21 and the metal pin electrode 11.
S4: a driving IC2 is placed on the hard base plate 1 such that bottom pins 21 of the driving IC2 are electrically connected to corresponding metal deposition layers 12 on the hard base plate 1 (see fig. 5). The material of the hard base plate 1 can be alloy metal or sapphire, so that the alloy metal or sapphire has high corrosion resistance on one hand and is stable on the other hand. And when the lamp beads are manufactured, a large hard bottom plate 1 can be selected, a plurality of LED lamp beads are manufactured on the large hard bottom plate 1, and after the LED lamp beads are packaged, the circuit and the hard substrate are stripped, and then the lamp beads are cut into single lamp beads. In this embodiment, a plurality of metal pin electrodes 11 may be disposed on the upper surface of the hard base plate 1 (i.e. a plurality of metal pin electrodes 11 corresponding to each lamp bead), and the definition of the plurality of metal pin electrodes 11 may be SIN, CLK, SDO, VCC and GND, respectively, where SIN, CLK, SDO and VCC are distributed at four corners of the hard base plate 1 where a single lamp bead is located, and GND is distributed at the middle position of the hard base plate 1 where a single lamp bead is located. The definition of the bottom pins 21 of the driving IC2 corresponding to the plurality of metal pin electrodes 11 on the surface of the hard base plate 1 is the same, that is, the definition of the bottom pins 21 of the driving IC2 is SIN, CLK, SDO, VCC and GND, respectively, as shown in fig. 3.
S5: an insulating paste 3 is molded on the surface of the hard base plate 1, and the insulating paste 3 covers the surface of the driving IC 2.
S6: and transferring the RGB chip onto the insulating colloid 3, covering transparent colloid 4 on the surfaces of the insulating colloid 3 and the RGB chip, punching to expose electrode pins of the RGB chip and top pins 22 of the driving IC2, and electrically connecting the top pins 22 of the driving IC2 with corresponding electrode pins of the RGB chip through conductive metal 5 arranged in a punching area. Fig. 2 is a schematic diagram of the structure of any RGB chip.
In this embodiment, since the driving IC2 and the RGB chip are both disposed on one side of the hard base plate 1, compared with the manner of disposing the driving IC2 and the RGB chip on two sides of the lamp panel respectively, the arrangement on the same side can reduce or shorten the routing, and the routing does not need to pass through the hard base plate 1, and the driving IC2 and the RGB chip on the same side of the hard base plate 1 are directly electrically connected, so that the through holes on the hard base plate 1 can be reduced, the manufacturing cost is reduced, and the hard base plate 1 is not easy to damage, and meanwhile, the insulating colloid 3 and the transparent colloid 4 are perforated, and the conductive metal 5 in the perforation area is utilized to realize the electrical connection between the driving IC2 and the RGB chip. In addition, the strength of the hard base plate is higher than that of the soft base plate, and the metal pin electrode and the metal deposition layer are formed on the hard base plate to realize the electric connection with the driving IC, so that the LED lamp bead with small size can be manufactured.
In some alternative embodiments, referring to fig. 6 and 7, the molding an insulating gel 3 on the surface of the hard base plate 1 so that the insulating gel 3 covers the surface of the driving IC2 may include: and a layer of deep black insulating colloid 3 is covered on the top of the hard bottom plate 1 in a molding mode, so that the periphery of the driving IC2 is wrapped by the insulating colloid 3, wherein the height of the insulating colloid 3 is higher than the upper surface of the driving IC 2. According to the embodiment, the dark black insulating colloid is molded, so that the contrast of the lamp beads can be enhanced while the insulating effect is achieved, and the darker the lamp beads, the higher the contrast is.
Referring to fig. 7 and 8, in some embodiments, the transferring the RGB chip onto the insulating gel 3, covering the transparent gel 4 on the surfaces of the insulating gel 3 and the RGB chip, punching holes to expose the electrode pins of the RGB chip and the top pins 22 of the driving IC2, and electrically connecting the top pins 22 of the driving IC2 with the corresponding electrode pins of the RGB chip through the conductive metal 5 disposed in the punching region may include: the first number of RGB chips are all transferred to the insulating colloid 3 through a mass transfer technology, the transparent colloid 4 is covered on the surfaces of the insulating colloid 3 and the RGB chips, in this embodiment, the RGB chips may be located on the same plane, and the R chips, the G chips and the B chips in the RGB chips are arranged in a staggered manner, or may be located on the same plane (for example, the R chips, the G chips and the B chips in the RGB chips are stacked above the insulating colloid 3, and the R chips, the G chips and the B chips are different in size so as to expose the light emitting layers of the R chips, the G chips and the B chips, and in this embodiment, the RGB chips are arranged on the same plane, the transparent colloid 4 covered on the surface of the RGB chips is also insulated, and may be a matte colloid, and the electrodes of the RGB chips and the top pins 22 of the RGB chips are perforated at the corresponding positions of the transparent colloid 4 and the insulating colloid 3, so as to expose the electrodes of the RGB chips and the top pins 22 of the RGB chips, and the conductive metal IC2 are deposited in the perforated area, and the conductive IC2 are electrically connected with the conductive IC chip and the conductive IC chip by the corresponding conductive IC chip and the conductive IC chip are electrically connected in the conductive IC 5 by the conductive IC and the conductive IC.
The first number may be R, G, B chips in one group of RGB chips, or may be multiple groups of RGB chips, where the first number is a multiple of 3.
Referring to fig. 9, further, the punching at the corresponding positions of the transparent colloid 4 and the insulating colloid 3 to expose the electrode pins of the RGB chips and the top pins 22 of the driving IC2 may include: punching a connecting hole at the positive position of the transparent colloid 4 corresponding to the R chip and punching connecting holes at the positions of the transparent colloid 4 and the insulating colloid 3 corresponding to the R+ pins at the top of the driving IC2 by laser, so that the connecting holes at the positive position of the R chip are communicated with the connecting holes at the positions of the R+ pins at the top of the driving IC 2; punching a connecting hole at the positive position of the transparent colloid 4 corresponding to the G chip by laser, and punching connecting holes at the positions of the transparent colloid 4 and the insulating colloid 3 corresponding to the G+ pins at the top of the driving IC2, so that the connecting holes at the positive position of the G chip are communicated with the connecting holes at the positions of the G+ pins at the top of the driving IC 2; punching a connecting hole at the position of the positive electrode of the B chip corresponding to the transparent colloid 4 by laser, and punching connecting holes at the positions of the transparent colloid 4 and the B+ pins of the insulating colloid 3 corresponding to the top of the driving IC2, so that the connecting holes at the position of the positive electrode of the B chip are communicated with the connecting holes at the position of the B+ pins of the top of the driving IC 2; and the negative electrode positions of the transparent colloid 4 corresponding to the R chip, the G chip and the B chip are provided with connecting holes by laser, and the positions of the transparent colloid 4 and the insulating colloid 3 corresponding to the GND pin at the top of the driving IC2 are provided with connecting holes, so that the connecting holes at the negative electrode positions of the R chip, the G chip and the B chip are communicated with the connecting holes at the GND pin at the top of the driving IC 2. In this embodiment, the positive and negative electrodes of the RGB chip and the r+, g+, b+ and GND electrodes on the top of the driving IC2 chip can be opened by laser, and after the RGB chip and the driving IC2 electrodes are all exposed by the laser, the hole sites are shown in fig. 9, and 10 laser holes are required.
Of course, in other embodiments, other perforation methods may be used, and are not limited to laser perforation.
Further, referring to fig. 10 to 11, the depositing the conductive metal 5 in the punching area to electrically connect the top pins 22 of the driving IC2 with the corresponding electrode pins of the RGB chip may include: a circuit is etched on the surface of the transparent colloid 4 through an optical mask, then a layer of conductive metal 5 is deposited on the circuit through vacuum sputtering or electroplating, and then the redundant optical mask (namely, the circuit outside the required circuit) is removed, so that the deposited conductive metal 5 is slightly higher than the transparent colloid 4. The shape of the conductive metal 5 is determined according to the positions and distances of the positive electrode, the negative electrode and the electrode on the top of the driving IC2 of the RGB chip, the conductive metal 5 is required to cover the positive electrode of the R chip and the r+ electrode of the driving IC2, the positive electrode of the G chip and the g+ electrode of the driving IC2, the positive electrode of the B chip and the b+ electrode of the driving IC2, the negative electrode of the RGB chip and the GND electrode of the driving IC2 are required, and the conductive metals 5 in the four areas are not conducted with each other.
In some alternative embodiments, referring to fig. 12 to 23, the transferring the RGB chip onto the insulating gel 3, covering the transparent gel 4 on the surface of the insulating gel 3 and the RGB chip, punching holes to expose the electrode pins of the RGB chip and the top pins 22 of the driving IC2, and electrically connecting the top pins 22 of the driving IC2 with the corresponding electrode pins of the RGB chip through the conductive metal 5 disposed in the punching hole area may include:
transferring a first chip of the RGB chips onto the insulating colloid 3 and covering the first transparent colloid 41; punching holes in the corresponding positions of the first transparent colloid 41 and the insulating colloid 3 to expose the electrode pins of the first chip and the corresponding top pins 22 of the driving IC2, and depositing conductive metal 5 in the punching area to electrically connect the electrode pins of the first chip and the corresponding top pins 22 of the driving IC2 (see fig. 12 to 16).
Transferring a second chip of the RGB chips onto the first transparent colloid 41 and covering the second transparent colloid 42; punching holes in the corresponding positions of the second transparent colloid 42, the first transparent colloid 41 and the insulating colloid 3 to expose the electrode pins of the second chip and the corresponding top pins 22 of the driving IC2, and depositing conductive metal 5 in the punching region to electrically connect the electrode pins of the second chip and the corresponding top pins 22 of the driving IC2 (see fig. 17 to 20).
Transferring a third chip of the RGB chips onto the second transparent colloid 42 and covering the third transparent colloid 43; punching holes in the corresponding positions of the third transparent colloid 43, the second transparent colloid 42, the first transparent colloid 41 and the insulating colloid 3 to expose the electrode pins of the third chip and the corresponding top pins 22 of the driving IC2, and depositing conductive metal 5 in the punching area to electrically connect the electrode pins of the third chip and the corresponding top pins 22 of the driving IC2 (see fig. 21 to 23).
It can be understood that, in the above embodiment, the first chip, the second chip and the third chip are packaged on the insulating colloid 3 in a superposition manner, and the sizes or arrangement positions of the chips may be different, so as to meet the requirement that the light-emitting layers of the chips are not blocked after the chips are superposed (see fig. 26 to 28), where the chips are set as the chips with different sizes, and the light-emitting layer 9 areas of the chips may be set at different positions, so that the light-emitting layers 9 of the chips are not blocked after the chips are stacked. Preferably, when arranging the chips, the first chip may be set to have the largest size, the second chip is set to have the second size, and the third chip is set to have the smallest size; of course, other arrangements are possible, such as the second chip being set to the largest size, the third chip being set to the largest size, etc., and the order of sizes, stacking order, and positions of the chips are not limited.
The example given in this embodiment is that the first chip has the largest size, the first chip is the B chip, the second chip has the second size, the second chip is the G chip, the third chip has the smallest size, and the third chip is the R chip, however, in other embodiments, the G chip or the R chip may be set as the first chip.
Taking the largest dimension of the B chip as an example (see fig. 26), when stacking, the B chip is placed on the insulating gel 3 first, and the size and placement position of the B chip may not completely cover the four top pins 22 of the driving IC2, that is, at least a portion of each of the four top pins 22 needs to be exposed, so as to facilitate subsequent electrical connection. After the B chip is placed, a layer of first transparent colloid 41 may be molded, laser drilling is performed at the corresponding positions of the first transparent colloid 41 and the insulating colloid 3, the positive and negative electrode pins of the B chip and the b+ pins and GND pins at the top of the driving IC2 are exposed, the circuit is etched in the punching area through the optical mask, and the conductive metal 5 is deposited on the circuit (excessive optical mask is cleaned away), so that the positive electrode pin of the B chip is electrically connected with the b+ pins at the top of the driving IC2, and the negative electrode pin of the B chip is electrically connected with the GND pins at the top of the driving IC 2.
Then, the G chip (see fig. 27) is transferred onto the first transparent colloid 41 and covered with the second transparent colloid 42; and laser drilling is performed at the corresponding positions of the second transparent colloid 42, the first transparent colloid 41 and the insulating colloid 3, so that the anode pin and the cathode pin of the G chip, the G+ pin and the GND pin at the top of the driving IC2 are exposed, a circuit is etched in a drilling area through an optical mask, conductive metal 5 is deposited on the circuit (excessive optical mask is cleaned), the anode pin of the G chip is electrically connected with the G+ pin at the top of the driving IC2, and the cathode pin of the G chip is electrically connected with the GND pin at the top of the driving IC 2.
A similar process step is used to transfer the R chip (see fig. 28) onto the second transparent gel 42 and cover the third transparent gel 43; and laser drilling is performed at the corresponding positions of the third transparent colloid 43, the second transparent colloid 42, the first transparent colloid 41 and the insulating colloid 3, so that the anode pin and the cathode pin of the R chip, the R+ pin and the GND pin at the top of the driving IC2 are exposed, a line is etched in a drilling area through an optical mask, conductive metal 5 is deposited on the line (excessive optical mask is cleaned), the anode pin of the R chip is electrically connected with the R+ pin at the top of the driving IC2, and the cathode pin of the R chip is electrically connected with the GND pin at the top of the driving IC 2.
Finally, a layer of matte or matte epoxy glue may be molded on top of the third transparent colloid 43 to complete the encapsulation of the lamp bead, so as to form a complete LED lamp bead (see fig. 24 to 25).
The embodiment of the invention also provides an LED lamp bead, which can comprise: a hard base plate 1, wherein a driving IC2 can be packaged on the hard base plate 1 through an insulating colloid 3, a bottom pin 21 of the driving IC2 is electrically connected with a corresponding metal pin electrode 11 on the hard base plate 1, the insulating colloid 3 covers the surface of the driving IC2, the insulating colloid 3 is preferably dark black, and the height of the insulating colloid 3 is slightly higher than the upper surface of the driving IC 2; and the RGB chip can be packaged on the surface of the insulating colloid 3 through the transparent colloid 4, the transparent colloid 4 covers the surface of the RGB chip, the transparent colloid 4 and the insulating colloid 3 are provided with connecting holes 6 so as to expose electrode pins of the RGB chip and top pins 22 of the driving IC2, and conductive metal 5 is arranged in the connecting holes 6, and the conductive metal 5 electrically connects the top pins 22 of the driving IC2 with corresponding electrode pins of the RGB chip. In the present embodiment, the arrangement manner of the RGB chips on the insulating gel 3 is not particularly limited. The LED lamp beads can be obtained by adopting the manufacturing method provided in any of the above embodiments, and details are not repeated here.
In some embodiments, referring to fig. 10 and 11, the RGB chips may be located on the same plane of the surface of the insulating gel 3, and the R chip, the G chip, and the B chip in the RGB chips are arranged in a staggered manner. That is, the R chip, the G chip and the B chip are not arranged in a straight line, the staggered arrangement can improve the integration level of the LED lamp beads, improve the manufacturing precision degree of the LED lamp beads, facilitate wiring, facilitate connection to a common electrode, facilitate manufacturing of the small-size lamp beads, simplify the process flow, concentrate the luminous source, improve the light emitting effect and reduce the color difference of products under different angles, wherein the RGB chip can adopt the structure shown in fig. 2.
Preferably, the positions and the positive and negative directions of the RGB chips are different according to the pin definition of the driving IC2, and the G chip in this embodiment is located between the R chip and the B chip, and the R chip and the B chip may be set to be opposite, and the G chip is relatively arranged in a staggered manner, and meanwhile, the positive poles of the G chip and the R chip are located on the same side, the negative poles are located on the same side, and the positive and negative pole placement directions of the B chip are opposite to the positive and negative pole placement directions of the R chip. The arrangement is that the positive poles of the R chip, the G chip and the B chip are closer to the corresponding positions of the R+, G+ and B+ pins on the driving IC2, and the negative poles of the R chip, the G chip and the B chip are approximately positioned on the same straight line with the GND pins on the driving IC2, so that punching and forming of the conductive metal 5 are facilitated.
In some alternative embodiments, as shown in fig. 24 and 25, the R chip, the G chip, and the B chip of the RGB chip are preferably stacked above the insulating gel 3, and the R chip, the G chip, and the B chip are different in size, so as to expose the light emitting layers 9 of the R chip, the G chip, and the B chip. That is, in this embodiment, by performing a special design on the size of each chip and setting the areas of the light emitting layers 9 to be different, the light emitting layers 9 are not blocked after the three chips are stacked, and the stacked scheme is adopted to facilitate manufacturing of the lamp beads with smaller size, so that the stacking manner of the chips can be simplified, the light emitting effect of each chip is not affected on the premise of ensuring the small size, and the color difference of the product under different angles is reduced.
The RGB chips in this embodiment are flip chips, each chip includes a P-electrode, an N-electrode, and a light emitting layer 9, and the positive and negative electrodes of the chip are led out through an insulating layer 8 and a metal pin 7 to manufacture RGB chips with positive and negative electrode pins at both ends of the chip (see fig. 26 to 28).
In the superposition scheme, taking the example that the sizes of the R chip, the G chip and the B chip are sequentially increased, an insulating layer 8 and a light-emitting layer 9 can be arranged in the region between the P pole and the N pole in the B chip; an insulating layer 8 and a light-emitting layer 9 can be arranged in the region between the P pole and the N pole in the G chip, wherein the light-emitting layer 9 of the G chip corresponds to the insulating layer 8 of the B chip and does not shade the light-emitting layer 9 of the B chip; the region between the P-pole and the N-pole in the R-chip may be provided with a light emitting layer 9, wherein the R-chip has the smallest size, and the light emitting layer 9 of the R-chip may correspond to the insulating layer 8 of the G-chip, without shielding the light emitting layers 9 of the G-chip and the B-chip.
Of course, the order of the sizes of the chips may be set according to actual needs, and is not limited to the above-described embodiments.
Further, referring to fig. 5, in some embodiments, a metal deposition layer 12 is disposed on a surface of the metal lead electrode 11, where the metal deposition layer 12 may be in one-to-one correspondence with the metal lead electrode 11, the metal deposition layer 12 is electrically connected with the metal lead electrode 11, and the metal deposition layer 12 is electrically connected with the bottom lead 21 of the driving IC 2. The present embodiment can form a metal layer suitable for placing the bottom pins 21 of the driving IC2 by adding the metal deposition layer 12 to electrically connect the metal pin electrodes 11 with the bottom pins 21 of the driving IC 2.
In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that in the present invention, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. The manufacturing method of the LED lamp bead is characterized by comprising the following steps of:
covering an optical mask on the hard bottom plate (1), and etching a required pin shape on the optical mask;
depositing metal on the formed pin shape and dissolving out the optical mask outside the required pin shape to form a metal pin electrode (11);
performing secondary deposition on the hard bottom plate (1) to form a metal deposition layer (12) suitable for placing bottom pins (21) of the driving IC (2) on the surface of the metal pin electrode (11);
placing a drive IC (2) on the hard bottom plate (1), and electrically connecting bottom pins (21) of the drive IC (2) with corresponding metal deposition layers (12) on the hard bottom plate (1);
molding an insulating colloid (3) on the surface of the hard bottom plate (1), and enabling the insulating colloid (3) to cover the surface of the driving IC (2);
and transferring the RGB chip onto the insulating colloid (3), covering transparent colloid (4) on the surfaces of the insulating colloid (3) and the RGB chip, punching to expose electrode pins of the RGB chip and top pins (22) of the driving IC (2), and electrically connecting the top pins (22) of the driving IC (2) with corresponding electrode pins of the RGB chip through conductive metal (5) arranged in a punching area.
2. The method for manufacturing the LED lamp bead according to claim 1, wherein the molding an insulating gel (3) on the surface of the hard base plate (1) to cover the surface of the driving IC (2) with the insulating gel (3) includes:
and (3) covering the deep black insulating colloid (3) on the top of the hard bottom plate (1) in a molding mode, so that the insulating colloid (3) wraps the periphery of the driving IC (2), wherein the height of the insulating colloid (3) is higher than the upper surface of the driving IC (2).
3. The method for manufacturing the LED lamp bead according to claim 1, wherein the transferring the RGB chip onto the insulating colloid (3), covering the transparent colloid (4) on the surface of the insulating colloid (3) and the RGB chip, punching to expose the electrode pins of the RGB chip and the top pins (22) of the driving IC (2), and electrically connecting the top pins (22) of the driving IC (2) with the corresponding electrode pins of the RGB chip through the conductive metal (5) disposed in the punching area, comprises:
transferring all the RGB chips of the first quantity to the insulating colloid (3), and covering transparent colloid (4) on the surfaces of the insulating colloid (3) and the RGB chips;
punching holes at corresponding positions of the transparent colloid (4) and the insulating colloid (3) to expose electrode pins of the RGB chip and top pins (22) of the driving IC (2);
and depositing conductive metal (5) in the punching area to electrically connect the top pins (22) of the driving IC (2) with the corresponding electrode pins of the RGB chip.
4. A method for manufacturing an LED lamp bead according to claim 3, wherein punching holes in the corresponding positions of the transparent colloid (4) and the insulating colloid (3) to expose electrode pins of the RGB chip and top pins (22) of the driving IC (2) comprises:
punching a connecting hole at the positive position of the transparent colloid (4) corresponding to the R chip by laser, and punching connecting holes at the positions of the transparent colloid (4) and the insulating colloid (3) corresponding to the R+ pins at the top of the driving IC (2), so that the connecting holes at the positive position of the R chip are communicated with the connecting holes at the positions of the R+ pins at the top of the driving IC (2);
punching a connecting hole at the positive electrode position of the G chip corresponding to the transparent colloid (4) through laser, and punching connecting holes at the G+ pin positions of the top of the drive IC (2) corresponding to the transparent colloid (4) and the insulating colloid (3), so that the connecting holes at the positive electrode position of the G chip are communicated with the connecting holes at the G+ pin positions of the top of the drive IC (2);
punching a connecting hole at the positive position of the transparent colloid (4) corresponding to the B chip and punching connecting holes at the positions of the transparent colloid (4) and the insulating colloid (3) corresponding to the B+ pins at the top of the driving IC (2) by laser, so that the connecting holes at the positive position of the B chip are communicated with the connecting holes at the positions of the B+ pins at the top of the driving IC (2);
and the negative electrode positions of the transparent colloid (4) corresponding to the R chip, the G chip and the B chip are provided with connecting holes by laser, and the positions of the transparent colloid (4) and the insulating colloid (3) corresponding to the GND pin at the top of the driving IC (2) are provided with connecting holes, so that the connecting holes at the negative electrode positions of the R chip, the G chip and the B chip are communicated with the connecting holes at the GND pin at the top of the driving IC (2).
5. The method for manufacturing the LED lamp bead according to claim 1, wherein the transferring the RGB chip onto the insulating colloid (3), covering the transparent colloid (4) on the surface of the insulating colloid (3) and the RGB chip, punching to expose the electrode pins of the RGB chip and the top pins (22) of the driving IC (2), and electrically connecting the top pins (22) of the driving IC (2) with the corresponding electrode pins of the RGB chip through the conductive metal (5) disposed in the punching area, comprises:
transferring a first chip of the RGB chips onto the insulating colloid (3) and covering the first transparent colloid (41);
punching holes in corresponding positions of the first transparent colloid (41) and the insulating colloid (3) to expose electrode pins of the first chip and corresponding top pins (22) of the driving IC (2), and depositing conductive metal (5) in a punching area to enable the electrode pins of the first chip to be electrically connected with the corresponding top pins (22) of the driving IC (2);
transferring a second chip of the RGB chips onto the first transparent colloid (41) and covering the second transparent colloid (42);
punching holes in the corresponding positions of the second transparent colloid (42), the first transparent colloid (41) and the insulating colloid (3) to expose electrode pins of the second chip and corresponding top pins (22) of the driving IC (2), and depositing conductive metal (5) in the punching area to enable the electrode pins of the second chip to be electrically connected with the corresponding top pins (22) of the driving IC (2);
transferring a third chip of the RGB chips onto the second transparent colloid (42) and covering the third transparent colloid (43);
punching holes in corresponding positions of the third transparent colloid (43), the second transparent colloid (42), the first transparent colloid (41) and the insulating colloid (3) to expose electrode pins of the third chip and corresponding top pins (22) of the driving IC (2), and depositing conductive metal (5) in a punching area to enable the electrode pins of the third chip to be electrically connected with the corresponding top pins (22) of the driving IC (2).
6. An LED light bead, characterized in that it comprises:
the driving circuit comprises a hard bottom plate (1), wherein a driving IC (2) is packaged on the hard bottom plate (1) through an insulating colloid (3), bottom pins (21) of the driving IC (2) are electrically connected with corresponding metal pin electrodes (11) on the hard bottom plate (1), and the insulating colloid (3) covers the surface of the driving IC (2);
the RGB chip is packaged on the surface of the insulating colloid (3) through the transparent colloid (4), the transparent colloid (4) covers the surface of the RGB chip, the connecting holes (6) are formed in the transparent colloid (4) and the insulating colloid (3) so as to expose electrode pins of the RGB chip and top pins (22) of the driving IC (2), conductive metal (5) is arranged in the connecting holes (6), and the conductive metal (5) is electrically connected with the top pins (22) of the driving IC (2) and corresponding electrode pins of the RGB chip.
7. The LED light bulb of claim 6, wherein:
the RGB chips are located on the same plane of the surface of the insulating colloid (3), and the R chips, the G chips and the B chips in the RGB chips are arranged in a staggered mode.
8. The LED light bulb of claim 6, wherein:
the R chip, the G chip and the B chip in the RGB chip are overlapped and arranged above the insulating colloid (3), and the sizes of the R chip, the G chip and the B chip are different so as to expose the luminous layers of the R chip, the G chip and the B chip.
9. The LED light bulb of claim 6, wherein:
the surface of the metal pin electrode (11) is provided with a metal deposition layer (12), the metal deposition layer (12) is electrically connected with the metal pin electrode (11), and the metal deposition layer (12) is electrically connected with a bottom pin (21) of the driving IC (2).
CN202310649146.8A 2023-06-02 2023-06-02 Manufacturing method of LED lamp bead and LED lamp bead Pending CN116799108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310649146.8A CN116799108A (en) 2023-06-02 2023-06-02 Manufacturing method of LED lamp bead and LED lamp bead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310649146.8A CN116799108A (en) 2023-06-02 2023-06-02 Manufacturing method of LED lamp bead and LED lamp bead

Publications (1)

Publication Number Publication Date
CN116799108A true CN116799108A (en) 2023-09-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310649146.8A Pending CN116799108A (en) 2023-06-02 2023-06-02 Manufacturing method of LED lamp bead and LED lamp bead

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Country Link
CN (1) CN116799108A (en)

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