CN116794900A - Silicon-on-insulator waveguide and silicon optical Mach-Zehnder modulator - Google Patents
Silicon-on-insulator waveguide and silicon optical Mach-Zehnder modulator Download PDFInfo
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- CN116794900A CN116794900A CN202310793109.4A CN202310793109A CN116794900A CN 116794900 A CN116794900 A CN 116794900A CN 202310793109 A CN202310793109 A CN 202310793109A CN 116794900 A CN116794900 A CN 116794900A
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- 239000012212 insulator Substances 0.000 title claims abstract description 59
- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000009897 systematic effect Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a silicon-on-insulator waveguide and a silicon optical Mach-Zehnder modulator, and belongs to the technical field of waveguides. The waveguide includes a first waveguide arm having a first protrusion with respect to the base portion and a second waveguide arm having a second protrusion with respect to the base portion. Having a positive doping in a localized region of the first bump and in a region of the substrate connected to the first bump; the area of the partial area of the second bulge is provided with middle negative doping and middle positive doping; the second bulge is provided with negative doping in the residual part and the residual area range of the second bulge, and the positive doping area and the negative doping area are arranged at intervals. The modulator comprises a buried oxide layer, a Si substrate and a silicon-on-insulator waveguide, wherein the extinction ratio of the silicon-on-insulator waveguide can be improved by changing the characteristic of the doped region of the silicon-on-insulator waveguide and by consistent errors caused by two waveguide arms of the silicon-on-insulator waveguide.
Description
Technical Field
The invention relates to the technical field of waveguides, in particular to a silicon-on-insulator waveguide and a silicon optical Mach-Zehnder modulator.
Background
The integrated silicon optical chip is a core component for chip information communication and processing. The emitting end silicon optical chip is a key device for realizing signal electro-optical conversion and signal modulation. The key components of the light emitting device comprise a light source and a modulator. The light source part cannot emit light by being powered up efficiently, and is usually made of a iii-v compound semiconductor material, and the signal modulator is usually a Silicon-on-insulator (SOI) light modulator. Silicon optical modulators generally include a mach-zehnder structured silicon optical modulator (MZM) and a micro-ring modulator to achieve high-speed electro-optic modulation of signals. In the prior art, the extinction ratio of silicon-on-insulator waveguides is sometimes not ideal.
Disclosure of Invention
In view of the above, the present invention provides a silicon-on-insulator waveguide and a silicon optical mach-zehnder modulator, which can convert accidental errors of doping in manufacturing the silicon-on-insulator waveguide into systematic errors by changing the characteristics of the doped region of the silicon-on-insulator waveguide, and can improve the extinction ratio of the silicon-on-insulator waveguide due to the coincidence of errors caused by two waveguide arms of the silicon-on-insulator waveguide, thereby being more suitable for practical use.
In order to achieve the first object, the technical scheme of the silicon-on-insulator waveguide provided by the invention is as follows:
the silicon-on-insulator waveguide provided by the invention comprises a first waveguide arm (3) and a second waveguide arm (6), wherein the first waveguide arm (3) is provided with a first bulge relative to the base part, the second waveguide arm (6) is provided with a second bulge relative to the base part,
having a positive doping in a localized region of the first bump and in a region of the substrate connected to the first bump; a region of the second raised local area having an intermediate negative doping and an intermediate positive doping in the remaining region of the first raised area, the intermediate region of the substrate; and negative doping is arranged at the residual part of the second bulge and in the range of the residual area of the second bulge, and the positive doping area and the negative doping area are arranged at intervals.
The silicon-on-insulator waveguide provided by the invention can be further realized by adopting the following technical measures.
Preferably, the doped regions of the first waveguide arm (3) and the second waveguide arm (6) are symmetrical or asymmetrical.
Preferably, the silicon-on-insulator waveguide further comprises an intermediate source and an intermediate ground,
the intermediate source is disposed on the intermediate negative doping,
the intermediate ground electrode is arranged on the intermediate positive doping.
Preferably, the widths of the first waveguide arm (3) and the second waveguide arm (6) are 400nm.
In order to achieve the second objective, the technical scheme of the silicon optical mach-zehnder modulator provided by the invention is as follows:
the silicon optical Mach-Zehnder modulator provided by the invention comprises a buried oxide layer, a Si substrate, the silicon-on-insulator waveguide provided by the invention,
the silicon-on-insulator waveguide is disposed over the buried oxide layer,
the Si substrate is disposed over the silicon-on-insulator waveguide,
the metal ends of the source electrode and the ground electrode of the silicon-on-insulator waveguide are exposed above the Si substrate.
The silicon-on-insulator waveguide and the silicon optical Mach-Zehnder modulator provided by the embodiment of the invention have positive doping in the local area of the first bulge and the range of the substrate connected with the first bulge; the area of the partial area of the second bulge is provided with middle negative doping and middle positive doping; the second bulge is provided with negative doping in the residual part and the residual area range of the second bulge, and the positive doping area and the negative doping area are arranged at intervals. When precision errors occur in photoetching or mask plates, the directions of the errors are consistent, so that the doping of two arms of the silicon optical Mach-Zehnder modulator can be kept consistent, and the operation controllability of the device is ensured. The Mach-Zehnder modulator provided by the embodiment of the invention overcomes the key problem that two waveguide arms of the silicon optical Mach-Zehnder modulator are inconsistent, can convert accidental errors doped during manufacturing of the silicon-on-insulator waveguide into systematic errors, and can improve the extinction ratio of the silicon-on-insulator waveguide because the errors caused by the two waveguide arms of the silicon-on-insulator waveguide are consistent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic diagram of a silicon optical Mach-Zehnder structure modulator in a typical direction under an ideal state in the prior art;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a schematic diagram of a structure in which the alignment accuracy of mask and photolithography is precisely divided into positively doped and negatively doped regions during the fabrication of a silicon optical Mach-Zehnder structure modulator in an ideal state;
FIG. 4 is a schematic structural diagram of a silicon optical Mach-Zehnder structure modulator in the manufacturing process, wherein the silicon optical Mach-Zehnder structure modulator is divided into positive doping and negative doping through mask plates and photoetching, but errors occur due to inaccurate division, and the two waveguide arms of the silicon optical Mach-Zehnder structure modulator are inconsistent;
FIG. 5 is a schematic diagram of the structure of the arrangement of the source and the ground electrodes of the MOS transistor in the process of manufacturing the silicon optical Mach-Zehnder structure modulator in the source-ground-source arrangement mode;
fig. 6 is a schematic structural diagram of an arrangement mode of source electrodes and ground electrodes in a metal oxide semiconductor transistor according to a ground electrode-source electrode-ground electrode-source electrode arrangement mode in a manufacturing process of a silicon optical mach-zehnder structure modulator according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a typical cross-sectional structure of a silicon optical Mach-Zehnder structure modulator in one direction according to an embodiment of the present invention;
reference numerals illustrate:
1. 8-signal, 2-N doping, 3-first waveguide arm, 4-P doping, 5-substrate, 6-second waveguide arm, 7-N doping, 9-silicon-on-insulator waveguide, 10-P doping, 11-first negative doped region, 12-positive doped region, 13-second negative doped region.
Detailed Description
In view of the above, the present invention provides a silicon-on-insulator waveguide and a silicon optical mach-zehnder modulator, which can convert accidental errors of doping in manufacturing the silicon-on-insulator waveguide into systematic errors by changing the characteristics of the doped region of the silicon-on-insulator waveguide, and can improve the extinction ratio of the silicon-on-insulator waveguide due to the coincidence of errors caused by two waveguide arms of the silicon-on-insulator waveguide, thereby being more suitable for practical use.
Mach-Zehnder modulators are the mainstay of existing silicon optical modulator products. The inventor has made great efforts and has found that silicon optical mach-zehnder modulators tend to have non-uniform dual-arm bias voltages, less than ideal performance of the modulator in terms of extinction ratio, etc., and non-uniform modulator performance and operating voltage between different locations during wafer fabrication. The modulation of signals is achieved by utilizing the phase difference of light waves caused by light passing through two different arms of the light modulator to form constructive interference or destructive interference at the outlet end. The phase difference is obtained by applying different voltages to the two arms to correspondingly change the refractive index of the waveguide, thereby producing a desired phase difference.
Pure silicon materials are not themselves conductive materials. In actual wafer processing, SOI must be doped differently to form different P, p+, p++, N, n+, n++ regions for conductivity. The exact distribution of these regions has a very direct impact on the performance of the device. However, due to errors in real processing, the design structure of the MZM often causes asymmetry of doped regions of the two waveguide arms, so that low-yield devices are manufactured, phases of the two waveguide arms cannot be accurately controlled, and light intensities of the two waveguide arms are inconsistent, so that extinction ratio is affected. The processing error is derived from the manufacturing error of the mask plate (1), and can be generally within +/-10 to 100 nm; (2) The alignment error between the different layers of the lithographic process is typically between + -10 and 50 nm. During processing, the mask plate and the photoetching alignment precision are accurately divided into two positively doped and negatively doped regions in the width of about 400nm, so that the device yield is directly influenced, and the positive and negative distributions of the two waveguide arms are inconsistent.
In view of the above, the present invention provides a silicon-on-insulator waveguide and a silicon optical mach-zehnder modulator that can improve the extinction ratio by changing the characteristics of the doped region of the silicon-on-insulator waveguide in combination with rearranging the source and the ground, thereby being more practical.
In order to further describe the technical means and effects of the present invention for achieving the intended purpose, the following detailed description refers to a silicon-on-insulator waveguide and a silicon optical mach-zehnder modulator according to the present invention, and its specific implementation, structure, features and effects are described in detail below with reference to the accompanying drawings and preferred embodiments. In the following description, different "an embodiment" or "an embodiment" do not necessarily refer to the same embodiment. Furthermore, the particular features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.
The term "and/or" is herein merely an association relation describing an associated object, meaning that three relations may exist, e.g. a and/or B, specifically understood as: the composition may contain both a and B, and may contain a alone or B alone, and any of the above three cases may be provided.
Silicon-on-insulator waveguide
The silicon-on-insulator waveguide provided by the embodiment of the invention comprises a first waveguide arm 3 and a second waveguide arm 6, wherein the first waveguide arm 3 is provided with a first bulge relative to the base part, and the second waveguide arm 6 is provided with a second bulge relative to the base part. Having a positive doping in a localized region of the first bump and in a region of the substrate connected to the first bump; the area of the partial area of the second bulge is provided with middle negative doping and middle positive doping; the second bulge is provided with negative doping in the residual part and the residual area range of the second bulge, and the positive doping area and the negative doping area are arranged at intervals.
The silicon-on-insulator waveguide provided by the embodiment of the invention has positive doping in the local area of the first bulge and the range of the substrate connected with the first bulge; the area of the partial area of the second bulge is provided with middle negative doping and middle positive doping; the second bulge is provided with negative doping in the residual part and the residual area range of the second bulge, and the positive doping area and the negative doping area are arranged at intervals. When precision errors occur in photoetching or mask plates, the directions of the errors are consistent, so that the doping of two arms of the silicon optical Mach-Zehnder modulator can be kept consistent, and the operation controllability of the device is ensured. The Mach-Zehnder modulator provided by the embodiment of the invention overcomes the key problem that two waveguide arms of the silicon optical Mach-Zehnder modulator are inconsistent, can convert accidental errors doped during manufacturing of the silicon-on-insulator waveguide into systematic errors, and can improve the extinction ratio of the silicon-on-insulator waveguide because the errors caused by the two waveguide arms of the silicon-on-insulator waveguide are consistent.
Wherein the doped regions of the first waveguide arm 3 and the second waveguide arm 6 are symmetrical or asymmetrical. By adopting the silicon-on-insulator waveguide provided by the embodiment of the invention, even if the doped regions of the first waveguide arm 3 and the second waveguide arm 6 are asymmetric, the doping of the two arms of the silicon optical Mach-Zehnder modulator can be kept consistent due to the consistent error directions, so that the operation controllability of the device is ensured.
Wherein the silicon-on-insulator waveguide further comprises an intermediate source and an intermediate ground. The middle source electrode is arranged on the middle negative doping, and the middle ground electrode is arranged on the middle positive doping. In this embodiment, the positive doping and the negative doping in the middle area of the substrate may be set at intervals, so long as the middle source electrode is ensured to be disposed on the negative doping, and the middle ground level is ensured to be disposed on the positive doping.
The widths of the first waveguide arm 3 and the second waveguide arm 6 are 400nm respectively.
Silicon optical Mach-Zehnder modulator
The silicon optical Mach-Zehnder modulator provided by the embodiment of the invention comprises a buried oxide layer, a Si substrate and the silicon-on-insulator waveguide provided by the invention. The silicon-on-insulator waveguide is arranged above the buried oxide layer, the Si substrate is arranged above the silicon-on-insulator waveguide, and the metal ends of the source electrode and the ground electrode of the silicon-on-insulator waveguide are exposed above the Si substrate.
The silicon optical Mach-Zehnder modulator provided by the embodiment of the invention has positive doping in the local area of the first bulge and the range of the substrate connected with the first bulge; the area of the partial area of the second bulge is provided with middle negative doping and middle positive doping; the second bulge is provided with negative doping in the residual part and the residual area range of the second bulge, and the positive doping area and the negative doping area are arranged at intervals. When precision errors occur in photoetching or mask plates, the directions of the errors are consistent, so that the doping of two arms of the silicon optical Mach-Zehnder modulator can be kept consistent, and the operation controllability of the device is ensured. The Mach-Zehnder modulator provided by the embodiment of the invention overcomes the key problem that two waveguide arms of the silicon optical Mach-Zehnder modulator are inconsistent, can convert accidental errors doped during manufacturing of the silicon-on-insulator waveguide into systematic errors, and can improve the extinction ratio of the silicon-on-insulator waveguide because the errors caused by the two waveguide arms of the silicon-on-insulator waveguide are consistent.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (5)
1. A silicon-on-insulator waveguide is characterized by comprising a first waveguide arm (3) and a second waveguide arm (6), wherein the first waveguide arm (3) is provided with a first bulge relative to a base part, the second waveguide arm (6) is provided with a second bulge relative to the base part,
having a positive doping in a localized region of the first bump and in a region of the substrate connected to the first bump; a region of the second raised local area having an intermediate negative doping and an intermediate positive doping in the remaining region of the first raised area, the intermediate region of the substrate; and negative doping is arranged at the residual part of the second bulge and in the range of the residual area of the second bulge, and the positive doping area and the negative doping area are arranged at intervals.
2. Silicon-on-insulator waveguide according to claim 1, characterized in that the doped regions of the first waveguide arm (3), the second waveguide arm (6) are symmetrical or asymmetrical.
3. The silicon-on-insulator waveguide of claim 1, further comprising an intermediate source and an intermediate ground,
the intermediate source is disposed on the intermediate negative doping,
the intermediate ground electrode is arranged on the intermediate positive doping.
4. The silicon-on-insulator waveguide according to claim 1, characterized in that the width of the first waveguide arm (3) and the second waveguide arm (6) is 350nm-600nm, respectively.
5. A silicon optical mach-zehnder modulator comprising a buried oxide layer, a Si substrate, the silicon-on-insulator waveguide of any one of claims 1-4,
the silicon-on-insulator waveguide is disposed over the buried oxide layer,
the Si substrate is disposed over the silicon-on-insulator waveguide,
the metal ends of the source electrode and the ground electrode of the silicon-on-insulator waveguide are exposed above the Si substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310793109.4A CN116794900A (en) | 2023-06-30 | 2023-06-30 | Silicon-on-insulator waveguide and silicon optical Mach-Zehnder modulator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310793109.4A CN116794900A (en) | 2023-06-30 | 2023-06-30 | Silicon-on-insulator waveguide and silicon optical Mach-Zehnder modulator |
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| Publication Number | Publication Date |
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| CN116794900A true CN116794900A (en) | 2023-09-22 |
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| CN202310793109.4A Pending CN116794900A (en) | 2023-06-30 | 2023-06-30 | Silicon-on-insulator waveguide and silicon optical Mach-Zehnder modulator |
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| Country | Link |
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| CN (1) | CN116794900A (en) |
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- 2023-06-30 CN CN202310793109.4A patent/CN116794900A/en active Pending
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