CN116755130A - Full metal oxide sensor pixel with adjustable range - Google Patents
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Abstract
The application discloses an all-metal oxide sensor pixel with adjustable measuring range, which comprises a metal oxide diode, a pre-stored capacitor CO and a read TFT transistor, wherein the grid electrode and the drain electrode of the metal oxide diode are connected to a VSS power supply, the source electrode of the metal oxide diode is connected to the drain electrode of the read TFT transistor, and the pre-stored capacitor C0 is arranged at two ends of the grid electrode and the source electrode of the metal oxide diode in parallel; the source of the read TFT transistor is connected to the data; the source of the read TFT transistor is connected to the drive control signal Gn. The application has the advantages that the sensing of the photosensitive signal is realized by adopting the novel metal oxide diode, and the defects of the PIN diode scheme in the prior art are overcome.
Description
Technical Field
The application relates to the field of optical signal detection, in particular to an ultralow leakage current sensor based on a metal oxide diode.
Background
The field of optical detection imaging has many applications, such as the application of X-ray imaging in the medical field, and the like, the X-ray signals after the X-ray is irradiated by the X-ray and then detected by the sensor, the detected optical signals are converted into electrical signals with different sizes, and the image signals with different gray scales are formed based on the electrical signal processing, so that the X-ray image is formed, and the assistance is provided for the medical field. In the field of optical detection imaging, it is necessary to convert an optical signal into an electrical signal, then form an electrical signal corresponding to the optical signal, and then acquire an image through acquisition and processing of the electrical signal. The final step is thus to acquire the optical signal and convert it into an electrical signal to form data representing the optical signal.
As shown in fig. 1, the technical scheme commonly adopted in the prior art is as follows: the PIN diode sensor circuit scheme adopts a PIN diode to realize the sensing of optical signals, converts the optical signals into electric signals, and has the circuit structure as follows: the LED display device comprises a PIN diode and a TFT (thin film transistor), wherein the anode of the PIN diode is input with a bias voltage signal and is used for driving and controlling the current flow direction, the cathode of the PIN diode is connected to a drain of the TFT, the source of the TFT is connected to a data line, and the data line is used for outputting electric signal data representing an optical signal; the gate of the TFT transistor inputs a driving voltage Vgate for controlling the TFT transistor to be turned on or off.
The working principle comprises the following steps: after detecting the optical signal, the Pin diode converts the optical signal into an electric signal, wherein current flows to the directions of the TFT and the data line; and then, the transmission of an electric signal to the data line is controlled by controlling the on state of the gate voltage Vgate of the TFT transistor, so that sensing acquisition is realized, and the subsequent imaging is carried out through imaging processing of the data line signal.
The Pin diode mode has the advantages of low cost and simple sensing circuit, but has obvious defects, and the Pin diode is adopted to sense light, so that the debugging is difficult due to the extremely low leakage current process of the Pin; meanwhile, a PIN diode is adopted to cause the defect that lag ghost shadow cannot be avoided and the subsequent imaging effect is poor; meanwhile, the larger leakage current of the TFT used for switch control can also interfere the signal reading process of other rows, namely the leakage current of the aSi TFT is the same as PIN, when n+1 rows are read, the other rows are theoretically in the closed state, but the closing effect of the aSi TFT is inferior to the difference between IGZO TFT,100fA and 0.1fA, once the array is larger, the reading time is longer, and the integrated signal is the signal of the leakage current of the TFTs of other rows, but not the effective signal of the row, so that the application scene of small signals can be interfered. Therefore, the sensor scheme for realizing the sensitization by adopting the PIN diode scheme in the prior art has defects, such as debugging difficulty caused by reducing leakage current of PIN and aSi TFTs from-13 order of magnitude to-15 order of magnitude; such as abnormal small signal section data and phenomenon that multiple lines cannot be corresponding caused by unstable leakage current and high leakage current; if lag is large, a use scene of high frequency and large signal cannot be realized; meanwhile, the pixel structure is simple, higher measuring range and the like cannot be met, and the current sensor pixel is limited to further meet the requirement of sensitization.
Disclosure of Invention
The application aims to overcome the defects of the prior art, provides an ultralow leakage current sensor based on a metal oxide diode, adopts a new metal oxide diode to realize sensing of a photosensitive signal, and solves the defects of a PIN diode scheme in the prior art.
In order to achieve the above purpose, the technical scheme adopted by the application is as follows: an ultralow leakage current sensor based on a metal oxide diode comprises the metal oxide diode, a pre-stored capacitor CO and a read TFT transistor, wherein the grid electrode and the drain electrode of the metal oxide diode are connected to a VSS power supply, the source electrode of the metal oxide diode is connected to the drain electrode of the read TFT transistor, and the pre-stored capacitor C0 is arranged at two ends of the grid electrode and the source electrode of the metal oxide diode in parallel; the source of the read TFT transistor is connected to the data; the source of the read TFT transistor is connected to the drive control signal Gn.
The sensor further comprises a storage capacitor Cst, one end of which is connected to the reset power Vreset, and the other end of which is connected to the source of the metal oxide diode.
The sensor further includes a RST TFT transistor having a source connected to the drain of the read TFT and a drain connected to a reset power supply Vreset; the gate of the RST TFT transistor inputs a reset drive control signal.
The sensor further comprises an AMP TFT transistor connected in series between the drain of the read TFT transistor and the source of the metal oxide diode, the gate of which is connected to the source of the metal oxide diode, the source of which is connected to the drain of the read TFT transistor, and the drain of which is connected to the power supply VSS.
The grid electrode of the read TFT is connected with the scanning control circuit and is used for outputting a scanning signal Gn to drive the on-off of the read TFT.
The grid electrode of the RST TFT transistor is connected to the output end of the scanning control circuit, and the scanning signal Gn+1 output by the scanning control circuit controls the on-off of the RST TFT;
wherein the scan signal gn+1 is the next time of the scan signal Gn.
The voltage difference between VSS and Vreset voltage is regulated to regulate the grid source-drain voltage of the photosensitive device, so that the photosensitive device is dynamically regulated to be suitable for use scenes with different light intensities, the weaker photoelectric signals are amplified in proportion, the stronger photoelectric signals are reduced, and the built-in proportion coefficient correction of the IC is read at the rear section and is used for adapting to use scenes with different light intensities, and the photosensitive device is provided with a range regulating mechanism.
The metal oxide diode is used for converting an optical signal into an electric signal, wherein the optical signal is an optical signal obtained by converting visible light or high-energy rays and high-energy particles through a scintillator.
The scintillator comprises GoS material, csl material.
The application has the advantages that: the low Ioff of the metal oxide is utilized, so that the difficulty of process debugging is effectively reduced; because PIN is an amorphous silicon doped structure, a carrier transport mechanism of the material cannot avoid higher leakage current of more than 100fA, the target is less than 10fA, and the process cover has limited capability; the transport mechanism of the metal oxide is completely different from PIN, and the ultra-low leakage current effect of 0.1fA or below can be achieved as long as the basic material is debugged.
The scheme of an external pre-stored circuit of the charge is realized by utilizing the Cst capacitor and the pre-stored capacitor C0, and the lag residual electricity risk of the semiconductor material is removed; the VSS voltage is adjusted to change the pre-storage quantity and the multiplication proportion of the photoelectric signals, so that the adjustment of the range of the sensor circuit is realized corresponding to different dosage application scenes, and the application field is enlarged; the RST TFT transistor is added in the circuit design, so that an electric signal can be set to zero after a read signal is finished, and the residual electricity elimination is further promoted in order to adapt to the high-frequency application scene of the scheme; the circuit design is added with an AMP TFT transistor to further amplify the output electric signal, so that the signal is prevented from being interfered, the anti-interference capability is improved, and the amplified signal is easier to read by control equipment on a data signal line.
Drawings
The contents of the drawings and the marks in the drawings of the present specification are briefly described as follows:
FIG. 1 is a schematic diagram of a prior art optical signal sensor detection circuit;
FIG. 2 is a schematic diagram of an optical signal detection sensor according to an embodiment 1 of the present application;
FIG. 3 is a schematic diagram of an optical signal detection sensor according to an embodiment 3 of the present application;
FIG. 4 is a schematic diagram illustrating a regulating and controlling mechanism according to the present application.
The Chinese and English marks in the figures are compared with each other:
PIN: a depletion amorphous silicon diode;
diode: a diode;
aSi: amorphous silicon;
SIO: silicon oxide;
and (5) lag: residual shadow;
VSS: a low pressure source;
PGA3: reading a third gear;
vgs: a gate-source voltage;
cst: a storage capacitor;
gn: an nth row gate control signal directly fed by the IC;
gn-1: the n-1 row gate control signal is transferred from the previous row signal;
gn+1: the n+1th row gate control signal is transferred from the next row signal;
gn+m: n+m row gate control signals, with m row down signal transitions;
TFT: a thin film transistor;
vreset: resetting the voltage, constant potential;
ioff: leakage current.
Detailed Description
The following detailed description of the application refers to the accompanying drawings, which illustrate preferred embodiments of the application in further detail.
Example 1:
the application relates to the field of optical signal sensing detection imaging of a sensor circuit, such as X-ray imaging and the like, and belongs to the field of core detection thereof. The optical signal imaging detection sensor is used as the most basic component, and the core of the optical signal imaging detection sensor is that an optical signal is converted into an electric signal and is transmitted out through a data line to be detected and converted by a subsequent imaging device. Aiming at the defects of the PIN diode in the prior art, the application provides a novel detection sensor circuit based on the metal oxide diode, realizes the accurate and reliable detection of the optical signal while reducing the lag, improves the detector of the small signal, enlarges the use range of the pixel and has wider application field.
As shown in fig. 2, an ultralow leakage current sensor based on a metal oxide diode comprises a metal oxide diode, a pre-capacitor CO, a read TFT transistor, a storage capacitor Cst, and a RST TFT transistor;
wherein the grid electrode and the drain electrode of the metal oxide diode (IGZO) are connected to a VSS power supply, the source electrode of the IGZO is connected to the drain electrode of the read TFT transistor, and the two ends of the grid electrode and the source electrode of the metal oxide diode are connected in parallel to form a pre-stored capacitor C0; the source of the read TFT transistor is connected to the data; the source of the read TFT transistor is connected to the drive control signal Gn. The storage capacitor Cst has one end connected to the reset power Vreset and the other end connected to the source of the metal oxide diode.
The source of the RST TFT transistor is connected to the drain of the read TFT, and the drain of the RST TFT transistor is connected to the reset power Vreset; the gate of the RST TFT transistor inputs a reset drive control signal Gn. The grid electrode of the RST TFT transistor is connected to the output end of the scanning control circuit, and the scanning signal Gn+1 output by the scanning control circuit controls the on-off of the RST TFT; wherein the scan signal gn+1 is the next time of the scan signal Gn.
The working principle is as follows:
when the sensor circuit is used for detecting optical signals, the grid electrode of the read TFT is connected with the scanning control circuit, and the scanning control circuit outputs a scanning control signal according to a set scanning period and is used for outputting a scanning signal Gn to drive the on-off of the read TFT. Each scanning period is a signal reading period, and according to actual application scenes, VSS and Vreset voltages are set, and C0 and Cst capacitance values are set. After the optical signal irradiates the metal oxide diode, the optical signal is converted into a corresponding electric signal and charges flow to the data signal line direction due to the photoelectric characteristic of the optical signal, the modulation voltage of the Cst capacitor is used for preventing the optical signal from exceeding the bearing range of the TFT and reducing the coupling interference of peripheral signals to the optical signal in the flowing process, the stability is improved, then the conduction of the read TFT transistor is controlled by the scanning control signal Gn of the current row of the scanning line in the corresponding reading period, whether the conduction of the read TFT transistor represents whether the data line end can be read or not, so that charges can flow directionally and be output to the data line side through the read TFT. Of course, after reading, the RST TFT is driven and controlled by a control signal Gn+1 of the next reading period so as to realize zero setting of the electric signal, so that the electric signal passing through the readTFT transistor is zero setting, and the defect of smear lag caused by the existence of charges between the next scanning reading period and the last scanning reading period is avoided.
In the application, the circuit designed in the application has wider adaptability, can be used for different scenes, adopts the maximum linear dosage regulating and controlling mechanism (VSS), and adapts to different photosensitive scenes by regulating the VSS voltage dynamically. As shown in fig. 4, TFT Drain is constant at N, source is constant at M, and gate is constant at O; fixed vreset=4v, adjusting VSS can control the current value of metal oxide diode; VSS=0V, the current flowing through M-N is 1pA level, the current fluctuates after sensitization, the current fluctuation value is collected and integrated to obtain brightness information, and the brightness information is used for a high-range scene of a large signal; VSS=5V, current 1uA level of current flowing through M-N, current fluctuation after sensitization, can multiply the brightness information of small signals by increasing current value, is used for low range scenes of the small signals, wherein the range of the large and small signals refers to X-ray measurement, the dosage of X-rays is 4-6000 nGy, and the large range can be adapted through self-adjusting range.
The sensor circuit is used for sensing optical signals, namely visible light, a scintillator material can be adopted to convert corresponding X-rays and the like into visible light and then the visible light is converted by a metal oxide diode, and the metal oxide diode is used for converting the optical signals into electric signals, wherein the optical signals are the optical signals obtained by converting visible light or high-energy rays and high-energy particles by the scintillator. The scintillator comprises GoS material, csl material.
The advantages of the application include:
1. the diode structure of the metal oxide is introduced, and the induction of different gray scales is realized through charge sharing mechanism of Cgd off+C0 capacitor and charge redistribution interference generated by metal oxide sensitization; the initial circuit design can design different distribution proportion and amplitude, and the distribution is carried out in the actual use process.
2. The sensing effect of ultra-low gray scale is realized by utilizing the ultra-low leakage current characteristic of the metal oxide;
3. the sensing effect of extremely low lag is realized by utilizing the material characteristics that the metal oxide cannot be transited under the visible light;
4. the adjustment of the maximum linear dose, and the maximum utilization of ROIC, can be achieved by adjusting VSS; the ROIC is a whole-course read out IC, different reading gears are built in, and the ROIC can be used for different scenes aiming at different gears; the scenario beyond the highest gear requires the exchange of the ROIC style, and the service limit of the ROIC can be extended through the scheme.
5. The method is used for dynamic high-frequency scenes, and the higher the frequency is, the better the effect is; the high frequency of the always on radiation source is the motion speed of the measured object, the detection and refresh speed of the detector, the object is stationary for 1Hz, if the measured object is running at the recommended speed of > 60Hz.
The PIN photodiode is prepared from an aSi material, the leakage current is 1pA under the conventional process, and the PIN photodiode can be used only when the process is optimized to 10fA or below; the metal oxide material can realize the current less than 10fA by the conventional process due to the high band gap (3.4 eV), so that the process debugging difficulty is effectively reduced; in the scheme, the standard capacitor Cst and the high-temperature SiO film are adopted for charge storage, so that the lag problem caused by charge capturing and recombination of the PIN reversed biased capacitor is completely avoided;
the charge in the scheme is pre-stored in C0 and the pre-stored quantity can be changed by adjusting VSS voltage, so that the charge can correspond to different dosage application scenes; the application scenarios of different doses refer to: the medical scene ray source has low dosage requirement, higher medical dosage of pets and highest dosage for industrial use
The current product must be designed with different detectors for different scenes
Taking medical PGA3 application scenario as an example, for a 30Hz application scenario: a) An average current density of charge transfer in one frame is approximately 36pA; the metal oxide diode Vgs needs to be designed between 0 and 2.0V; b) The Cst adopts the conventional 140um pixel Cdiode 1pF capacitor design, and the pressure difference change of two ends of the Cst is approximately equal to 1.0V requirement; a pre-stored capacitor C0 is independently added to reduce power consumption as an auxiliary requirement, and VSS voltage requirement is 2.0V according to the design of C0 approximately equal to cst=1.0pF; c) After Gn is read, resetting N points on the next row, and transferring signals when the rest N-2 rows are read next time; d) The charge of C0 is transferred through the leakage current of metal oxide diode, the average current density is the same as the design value in a), and the charge rearrangement between Vreset-VSS is realized in the mode; d) Gn is turned on and the N-point charge is output through the read TFT;
the sensor circuit in the embodiment of the application is applied to detection of non-static optical signals, at least low-frequency optical signals, and cannot be applied to detection of static optical signals, because when the static optical signals are detected, the static optical signals mean that the optical signals are detected in a state, after the state is attempted to be maintained, the voltages at two ends of C0 are 0 after infinite balance, no gray effect exists, and data cannot be read, so that the sensor pixel circuit is applicable to dynamic scenes, particularly high-frequency scenes, and the higher the frequency is, the better the effect is.
Example 2:
the present application is modified on the basis of example 1 by adding an AMP TFT transistor in the circuit of example 1, the AMP TFT transistor being connected in series between the drain of the read TFT transistor and the source of the metal oxide diode, the gate of the AMP TFT transistor being connected to the source of the metal oxide diode, the source of the AMP TFT transistor being connected to the drain of the read TFT transistor, and the drain of the AMP TFT transistor being connected to the power supply VSS. The function of the AMP TFT is to amplify the electric signal, so that the defect that the electric signal output by the metal oxide is easy to be interfered and difficult to be detected when the electric signal output by the metal oxide is small is avoided, and the AMPTFT is added to enable the AMPTFT to be controlled by the electric signal output by the metal oxide, so that the output of the AMPTFT is converted into a high-level signal to be output to a data line, the anti-interference capability of the AMPTFT is improved, and meanwhile, data is easier to read, and the requirement of reading range is met.
According to the application, the metal oxide short-circuit TFT is used as the light-sensitive diode, the low Ioff of the metal oxide is utilized, the difficulty of process debugging is effectively reduced, the scheme of a Cst charge pre-storing circuit is utilized, the lag risk caused by PIN diode is removed, and the purpose of reducing the lag is realized through the cst+C0 circuit pre-storing.
It is obvious that the specific implementation of the present application is not limited by the above-mentioned modes, and that it is within the scope of protection of the present application only to adopt various insubstantial modifications made by the method conception and technical scheme of the present application.
Claims (9)
1. An adjustable range all-metal oxide sensor pixel, characterized in that: the MOS transistor comprises a metal oxide diode, a pre-stored capacitor CO and a read TFT transistor, wherein the grid electrode and the drain electrode of the metal oxide diode are connected to a VSS power supply, the source electrode of the metal oxide diode is connected to the drain electrode of the read TFT transistor, and the pre-stored capacitor C0 is arranged at two ends of the grid electrode and the source electrode of the metal oxide diode in parallel; the source of the read TFT transistor is connected to the data; the source of the read TFT transistor is connected to the drive control signal Gn.
2. An adjustable range all-metal oxide sensor pixel according to claim 1, wherein: the sensor further comprises a storage capacitor Cst, one end of which is connected to the reset power Vreset, and the other end of which is connected to the source of the metal oxide diode.
3. An adjustable range all-metal oxide sensor pixel according to claim 1 or 2, wherein: the sensor further includes a RST TFT transistor having a source connected to the drain of the read TFT and a drain connected to a reset power supply Vreset; the gate of the RST TFT transistor inputs a reset drive control signal.
4. An ultra low leakage current sensor based on metal oxide diodes as claimed in claim 1 or 2, wherein: the sensor further comprises an AMP TFT transistor connected in series between the drain of the read TFT transistor and the source of the metal oxide diode, the gate of which is connected to the source of the metal oxide diode, the source of which is connected to the drain of the read TFT transistor, and the drain of which is connected to the power supply VSS.
5. An adjustable range all-metal oxide sensor pixel according to claim 1 or 2, wherein: the grid electrode of the read TFT is connected with the scanning control circuit and is used for outputting a scanning signal Gn to drive the on-off of the read TFT.
Where Gn is the nth row timing scan signal in the sensor pixel array.
6. A range adjustable all-metal oxide sensor pixel according to claim 3, wherein: the grid electrode of the RST TFT transistor is connected to the output end of the scanning control circuit, and the scanning signal Gn+1 output by the scanning control circuit controls the on-off of the RST TFT;
wherein the scan signal gn+1 is a next line or next line of the scan signal Gn.
7. An adjustable range all-metal oxide sensor pixel according to any one of claims 1-6, wherein: the dynamic adjustment is realized by adjusting VSS/Vreset voltage, the method is suitable for detection scenes under different light intensities, and the pixel can realize the function of range adjustment.
8. An adjustable range all-metal oxide sensor pixel according to claim 1, wherein: the metal oxide diode is used for converting an optical signal into an electric signal, wherein the optical signal is an optical signal obtained by converting visible light or high-energy rays and high-energy particles through a scintillator.
9. An adjustable range all-metal oxide sensor pixel according to claim 8, wherein: the scintillator comprises GoS material, csl material.
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| CN202310689904.9A CN116755130A (en) | 2023-06-12 | 2023-06-12 | Full metal oxide sensor pixel with adjustable range |
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