CN116752109A

CN116752109A - Physical vapor deposition equipment, deposition process and etching process

Info

Publication number: CN116752109A
Application number: CN202310725218.2A
Authority: CN
Inventors: 潘兴强
Original assignee: Chenwei Equipment Technology Suzhou Co ltd
Current assignee: Chenwei Equipment Technology Suzhou Co ltd
Priority date: 2023-06-19
Filing date: 2023-06-19
Publication date: 2023-09-15

Abstract

The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to physical vapor deposition equipment, a deposition process and an etching process, which comprise the following steps: the reaction cavity is connected with a vacuum generating device; the target assembly is arranged at the upper end of the reaction cavity and is electrically connected with a target power supply arranged outside the reaction cavity; the magnetic control source is arranged on one side of the target assembly, which is opposite to the reaction cavity, and is assembled to be capable of moving along an annular path in a region close to the surface of the target assembly; the target assembly is provided with a through hole which is arranged at the inner side of the annular movement path of the magnetic control source; the invention also comprises a penetrating window which covers one side of the penetrating hole far away from the reaction cavity, and the invention simplifies the equipment structure while avoiding the phenomenon of reverse sputtering of the target.

Description

Physical vapor deposition equipment, deposition process and etching process

Technical Field

The invention belongs to the technical field of semiconductor processing equipment, and particularly relates to physical vapor deposition equipment, a deposition process and an etching process.

Background

Physical Vapor Deposition (PVD) is required to further increase the source (molecular) plasma density and increase the Step coverage by applying a bias to the carrier wafer substrate during the deposition of a micro-structured overlay film, particularly a post copper Barrier Layer (Cu Barrier Layer) and a Glue Layer (Glue Layer) before filling the middle tungsten metal. Methods for increasing the plasma density generally include the following two methods: one is to increase the power, increase the magnetic field strength, and decrease the area of the magnet to increase the power density per unit area; the second is the use of a second high density plasma source assist, commonly referred to as IMP (Ion Metal Plasma).

In the prior art, in order to reduce the plating rate and improve the power density of unit magnetic source area, small and high-strength magnets are used, so that the magnetic source cannot fully cover the target (Full-face area) in the plating process, meanwhile, the uncovered central part of the target is subjected to reverse sputtering (Re-deposition) to cause Particle defects (Particle defects), therefore, in the prior art, a magnet set capable of moving inside and outside is designed, the magnet set rotates on an outer ring during plating, and in addition, when argon ion bombardment and periodical Ta adhesion are performed (Ta packing), the magnet is deliberately moved to the inner ring to clean the film reversely sputtered at the center of the target, which leads to excessively complex magnetic source structure.

On the other hand, the second high-density plasma source in the prior art generally employs a radio frequency Coil (RF Coil) installed in the chamber, which is made of the same material as the target, and can be applied with a radio frequency power source to generate an inductively coupled plasma source (ICP) to enhance the ion concentration of the metal PVD, however, the radio frequency Coil is a part of the consumable material, and is subject to sputtering of the target above when the radio frequency power source is not turned on, so that a particle defect source is easily formed, and therefore, special embossing treatment is required on the surface of the Coil to increase the adhesion so as to avoid particle generation, which leads to an increase in the Coil manufacturing cost.

Disclosure of Invention

In view of the above-described drawbacks of the prior art, an object of the present invention is to provide a physical vapor deposition apparatus, a deposition process, and an etching process, which can avoid product particle defects due to target back-sputtering while simplifying the apparatus structure.

To achieve the above and other related objects, the present invention provides a physical vapor deposition apparatus comprising: the device comprises a sputtering part, a penetrating window, a reaction cavity, a magnetic control source and a wafer base;

the reaction cavity is connected with a vacuum generating device;

the sputtering part is arranged at the top of the reaction cavity, comprises a through hole and an integrally formed target assembly surrounding the through hole, and the bottom of the target assembly faces the bottom of the reaction cavity and is used for generating a sputtering plating source;

the penetrating window is covered at the top of the penetrating hole and is used for isolating the inner space and the outer space of the reaction cavity;

the magnetic control source is arranged at the top of the target assembly and is assembled to move around the penetrating window in a circular path so as to improve the uniformity of the distribution of the plasmas in the reaction cavity and realize Full-face etching;

the wafer pedestal is arranged at the bottom of the reaction cavity and is used for placing at least one wafer to be processed.

In an alternative embodiment of the present invention, the sputtering portion has a symmetrical structure, and a distance from any edge of the through hole to a center of the sputtering portion is 20% to 75% of a distance from any edge of the sputtering portion to the center of the sputtering portion.

In an alternative embodiment of the present invention, the penetration window is convexly disposed in a direction away from the reaction chamber.

In an alternative embodiment of the present invention, the bottom of the target assembly is configured to have a conical shape, so that the normal direction of each area of the bottom of the target assembly converges toward the central area of the wafer to be processed.

In an alternative embodiment of the present invention, the magnetic control device further comprises a water cooling disc and a driving part, wherein the water cooling disc comprises a cooling liquid and a bearing disc for containing the cooling liquid, and the water cooling disc is used for containing the magnetic control source; the driving part is connected with the magnetic control source and is used for driving the magnetic control source to do circular path movement around the penetrating window in the water-cooled disc.

In an alternative embodiment of the present invention, the apparatus further comprises an adjusting part disposed outside the reaction chamber, and the adjusting part is configured to generate a magnetic field for uniformly distributing plasma in the reaction chamber.

In an alternative embodiment of the invention, the adjusting part comprises at least one of several ring-shaped magnet sets, several electromagnetic coils or several permanent magnet combinations.

In an alternative embodiment of the present invention, the apparatus further comprises a rf bias power source electrically connected to the wafer pedestal for attracting ions in the plasma to bombard the surface to be deposited of the wafer to be processed.

In an alternative embodiment of the present invention, the plasma generator further comprises an auxiliary plasma source, wherein the auxiliary plasma source comprises a radio frequency power supply and a plurality of radio frequency coils; the radio frequency coil is fixedly arranged on the outer side of the penetrating window or is wound around the penetrating window; the radio frequency power supply is used for generating the radio frequency signal, and the coil is used for assisting the penetrating window to guide the radio frequency signal into the reaction cavity.

In an alternative embodiment of the present invention, the radio frequency coil is fixedly disposed outside the penetration window, and includes: the radio frequency coil is fixedly arranged on the outer surface of the penetrating window or is fixedly arranged in the outer cover of the penetrating window, and the outer cover is used for isolating radio frequency signals from the external environment.

In an alternative embodiment of the invention, an auxiliary plasma source is further included, the auxiliary plasma source including a microwave power source and a waveguide; the microwave power supply is used for generating a microwave signal, and the waveguide tube is used for conducting the microwave signal to a region corresponding to the penetrating window so that the microwave signal can enter the reaction cavity through the penetrating window.

In an alternative embodiment of the invention, a shield is provided on the inner side of the side wall of the reaction chamber and/or on the edge region of the wafer pedestal.

In an alternative embodiment of the invention, the height of the wafer pedestal is set such that the vertical distance between the wafer to be processed and the target is 15cm-50cm when the wafer to be processed is mounted on the wafer pedestal.

In an alternative embodiment of the present invention, the wafer pedestal comprises any one of an electrostatic chuck, a vacuum chuck, and a clamp-type pedestal.

To achieve the above and other related objects, the present invention also provides a deposition process, comprising the steps of:

providing the physical vapor deposition equipment, and installing a wafer to be processed in the reaction cavity;

adjusting the reaction cavity to target pressure, and introducing working gas;

and applying a first direct current voltage to the target assembly and applying a first radio frequency bias to the wafer pedestal.

In an alternative embodiment of the present invention, the power of the first dc voltage is 10 to 20KW, and the power of the first rf bias is 0 to 300W.

adjusting the reaction cavity to target pressure, and introducing working gas;

and applying a second direct current voltage to the target assembly, applying a second radio frequency bias to the wafer pedestal, and applying a first radio frequency voltage to the auxiliary plasma source.

In an alternative embodiment of the present invention, the power of the second dc voltage is 8 to 15KW, the power of the second rf bias is 0 to 300W or 300 to 1000W, and the power of the first rf voltage is 800 to 2000W.

To achieve the above and other related objects, the present invention also provides an etching process, including the steps of:

providing the physical vapor deposition equipment, and installing a piece to be etched in the reaction cavity;

adjusting the reaction cavity to target pressure, and introducing working gas;

and applying a third direct current voltage to the target assembly, applying a third radio frequency bias to the wafer pedestal, and applying a second radio frequency voltage to the auxiliary plasma source.

In an alternative embodiment of the present invention, the power of the third dc voltage is 300 to 1000W, the power of the third rf bias is 500 to 1200W, and the power of the second rf voltage is 500 to 2000W.

The invention has the technical effects that: according to the invention, the center part of the target which is not used in sputtering coating is removed, the through hole in the center part of the target is plugged by the penetrating window, the reverse sputtering phenomenon of the target is avoided, the tightness of the reaction cavity is ensured, the movement mode of the magnetron source becomes simple, only the back of the target is required to rotate around the penetrating window, the back and forth movement from the edge of the back of the target to the center of the back of the target is not required, and the equipment structure is simplified.

Drawings

FIG. 1 is a schematic diagram of a prior art physical vapor deposition apparatus;

FIG. 2 is a schematic diagram of a physical vapor deposition apparatus according to embodiment 1 of the present invention;

FIG. 3 is a schematic diagram of a physical vapor deposition apparatus according to embodiment 2 of the present invention;

FIG. 4 is a schematic diagram of a physical vapor deposition apparatus according to embodiment 3 of the present invention;

FIG. 5 is a schematic diagram of a physical vapor deposition apparatus according to embodiment 4 of the present invention;

FIG. 6 is a schematic diagram of a physical vapor deposition apparatus provided in example 5 of the present invention;

FIG. 7 is a schematic diagram of an end-face structure of a target provided by an embodiment of the present invention;

reference numerals illustrate: 10. a wafer to be processed; 20. a traditional target; 30. a traditional magnetic control source; 40. a conventional second high density plasma source; 100. a reaction chamber; 110. a cavity protection assembly; 120. a shelter ring; 200. a penetration window; 210. an isolation cover; 300. a target material; 310. a through hole; 320. a back plate; 400. a wafer pedestal; 500. a radio frequency coil; 600. a radio frequency power supply; 700. a waveguide; 800. a microwave power supply; 900. a target power supply; 1000. a first ring magnet set; 1100. a second ring magnet set; 1200. a radio frequency bias power supply; 1300. a magnetic control source; 1400. a water-cooling plate.

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.

It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the illustrations, not according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

The physical vapor deposition coating technology is mainly divided into vacuum evaporation coating, vacuum sputtering coating and vacuum ion coating, wherein vacuum sputtering coating refers to a technology of bombarding the surface of a target material by utilizing gas ions and depositing target material particles on the surface of an object to be processed to form a film. Taking chip processing as an example, as shown in fig. 1, in the prior art, in order to increase the power density per unit area of the magnetic source, a small and high-strength magnet is used, so that the conventional magnetic control source 30 cannot completely cover the conventional target 20 in the film coating process, which results in that part of target particles adhere to the central area of the conventional target 20, that is, reverse sputtering is formed, and the particles adhering to the central area of the conventional target 20 are generally unstable, and when the particles fall on the surface of the wafer 10 to be processed, the film coating quality of the surface of the wafer 10 to be processed is adversely affected, that is, particle defects are generated on the surface of the wafer 10 to be processed.

According to the invention, the central part of the target which is not used in sputtering coating is removed, the through hole in the central part of the target 300 is blocked by the penetrating window 200, the reverse sputtering phenomenon of the target 300 is avoided, the tightness of the reaction cavity 100 is ensured, the movement mode of the magnetron source 1300 becomes simple, only the back of the target 300 is required to rotate around the penetrating window 200, the back edge of the target 300 is not required to move back and forth from the edge of the back of the target 300 to the center of the back of the target 300, and the equipment structure is simplified.

The following describes the technical scheme of the present invention in detail with reference to specific embodiments:

example 1

Referring to fig. 2, the physical vapor deposition apparatus provided in this embodiment includes a reaction chamber 100, a sputtering portion, a magnetron source 1300, a penetration window 200, and a wafer base 400; the wafer base 400 is disposed at the bottom of the reaction chamber 100, and is used for placing at least one wafer 10 to be processed; in an embodiment, the wafer pedestal 400 is located below the target assembly, and the wafer pedestal 400 is electrically connected to the rf bias power source 1200, and in order to achieve a better deposition effect, the height of the wafer pedestal 400 is set such that, when the wafer 10 to be processed is mounted on the wafer pedestal 400, the vertical distance between the wafer 10 to be processed and the target 300 is 15cm-50cm, for example, 15cm, 30cm, 35cm, 50cm.

Referring to fig. 2, a vacuum generating device is connected to the reaction chamber 100, and in a specific embodiment, the vacuum generating device may be, for example, a vacuum pump, and further, a stop valve may be disposed between the vacuum pump and the reaction chamber 100, for example, so as to control the pressure of the reaction chamber 100.

Referring to fig. 2, in a further embodiment, a plurality of shields may be disposed in the reaction chamber 100, for example, to prevent deposition of target particles on the inner wall of the reaction chamber 100, and may be configured to be replaceable, for example, to facilitate reuse of the apparatus, and in a specific embodiment, the shields may include a chamber protection assembly 110 disposed proximate to the inner wall of the reaction chamber 100, and a shadow ring 120 disposed at the edge of the wafer pedestal 400, for example.

Referring to fig. 2, the sputtering portion is disposed at the top of the reaction chamber 100, and includes a through hole 310 and an integrally formed target assembly surrounding the through hole 310, wherein the bottom of the target assembly faces the bottom of the reaction chamber 100 and is used for generating plasma, the target assembly is mounted at the upper end of the reaction chamber 100, and the target assembly is electrically connected with a target power supply 900 disposed outside the reaction chamber 100; in a specific embodiment, the target assembly may include, for example, a target 300 and a backing plate 320, wherein the backing plate 320 is mounted on a side of the target 300 remote from the reaction chamber 100, the backing plate 320 may be, for example, made of a conductive material, and the target power supply 900 may be, for example, connected to the backing plate 320.

Referring to fig. 2, a magnetron source is disposed on top of the target assembly, and is configured to move in a circular path around the penetration window 200 to improve uniformity of distribution of the plasma in the reaction chamber 100; in a further embodiment, a heat dissipating device and a driving part may be disposed on a side of the target assembly opposite to the reaction chamber 100, where the heat dissipating device can conduct heat generated by the target assembly and the magnetron source 1300 to ensure that the apparatus operates at an ideal temperature, and in a specific embodiment, the heat dissipating device may be, for example, a water cooling disk 1400 disposed at an upper end of the target 300, where the water cooling disk 1400 includes a cooling liquid and a carrying disk for containing the cooling liquid, and the water cooling disk 1400 is used for containing the magnetron source 1300; the driving part is connected to the magnetic control source 1300, and is used for driving the magnetic control source 1300 to make a circular path motion around the penetrating window 200 in the water-cooled disk 1400.

It should be understood that the hollow target 300 does not have the phenomenon of target anti-sputtering, the magnetron source 1300 does not need to move towards the center of the target 300 to eliminate the anti-sputtering at the center of the target 300, the movement mode of the magnetron source 1300 becomes simple, the equipment structure is simplified, and meanwhile, the center of the target 300 with low utilization rate is hollowed into the through hole 310, so that the material cost of the target 300 can be saved. The shape of the through-hole 310 is not particularly limited, and in some embodiments, the through-hole 310 may be, for example, circular, square, polygonal, or the like. In a specific embodiment, as shown in fig. 7, the sputtering portion has a symmetrical structure, and in order to avoid uneven plating due to too large through holes 310 or reverse sputtering of the target 300 due to too small through holes 310, as shown in fig. 7, the distance R from any edge of the through holes 310 to the center of the sputtering portion is 20% -75% of the distance R from any edge of the sputtering portion to the center of the sputtering portion.

Referring to fig. 2, the penetrating window 200 is covered on the top of the through hole 310, and is used for isolating the vacuum environment in the reaction chamber 100 from the external space, and enabling the rf and microwave signals to penetrate into the chamber, and meanwhile, since the penetrating window 200 is far away from the lower end of the target 300, the particles of the target 300 can be prevented from adhering to the penetrating window 200, and further particle defects can be prevented from being generated. In an embodiment, the penetrating window 200 is protruded away from the reaction chamber 100, and may be, for example, a hollow hemispherical shape, a bell jar shape, a hollow cylinder shape, a hollow cone shape, or a stacked structure of two or more hollow cylinders with different diameters.

Referring to fig. 2, an auxiliary plasma source is disposed on a side of the penetration window 200 away from the reaction chamber 100, the auxiliary plasma source is configured to generate a radio frequency signal and/or a microwave signal, and the material of the penetration window 200 is configured to be capable of penetrating the radio frequency signal and/or the microwave signal, and in an embodiment, the penetration window 200 may be made of ceramic or quartz material, for example.

It should be appreciated that the auxiliary plasma source can enhance the ion concentration of the metal PVD, and that the use of high density ions can enhance the effectiveness of biasing the substrate to guide ions, thereby increasing coverage, and can be used as a technique for separate argon ion bombardment, as well as a technique for simultaneous deposition bombardment.

In a specific embodiment, the auxiliary plasma source may be, for example, an inductively coupled plasma source (ICP) or an electron cyclotron resonance plasma source (ECR). In this embodiment, taking an inductively coupled plasma source as an example, the inductively coupled plasma source includes a radio frequency power source 600 and a radio frequency coil 500, in a specific embodiment, an insulation cover 210 is disposed on a side of the penetration window 200 away from the reaction chamber 100, the insulation cover 210 is made of an electromagnetic shielding material, for example, may be a stainless steel metal housing, the radio frequency coil 500 is installed in the insulation cover 210, and specifically, the radio frequency coil 500 may be disposed, for example, close to an inner wall of the insulation cover 210.

It should be appreciated that the auxiliary plasma source of the present invention is installed outside the reaction chamber 100 without installing a radio frequency coil in the chamber, so there is no cost of expensive consumables and risk of particle defects.

Referring to fig. 2, in a further embodiment, an adjusting portion is disposed on the outer side of the sidewall of the reaction chamber 100, the adjusting portion is disposed on the outer side of the reaction chamber 100, and the adjusting portion is configured to generate a magnetic field for uniformly distributing plasma in the reaction chamber 100. The regulating part may be at least one of a plurality of ring-shaped magnet groups, a plurality of electromagnetic coils, or a plurality of permanent magnet combination devices, for example. In a specific embodiment, the adjusting part may include, for example, a first ring magnet group 1000 and a second ring magnet group 1100, the first ring magnet group 1000 and the second ring magnet group 1100 being disposed at intervals in the vertical direction; the first ring magnet set 1000 and the second ring magnet set 1100 may be formed by a plurality of permanent magnets around the outer side of the cavity, or a single-turn or multi-turn electromagnetic coil; when a plurality of permanent magnets are adopted, the permanent magnets can be uniformly arranged along the circumferential direction of the reaction cavity, for example, so that the magnetic fields of the permanent magnets are distributed in geometric symmetry about the center of the reaction cavity; when electromagnetic coils are used, they may be disposed around the reaction chamber, for example, so that their magnetic fields are uniformly distributed along the circumference of the reaction chamber.

Example 2

Referring to fig. 3, the difference between the present embodiment and embodiment 1 is that: the rf coils 500 in this embodiment are distributed on the outer side surface of the penetration window 200. The present embodiment is not meant to be limiting, and in practical applications, the rf coil 500 may be reasonably disposed within the isolation cover 210 according to the actual power, space, heat dissipation, etc.

Example 3

Referring to fig. 4, the difference between the present embodiment and embodiment 2 is that: the bottom of the target assembly is configured to be conical, so that the normal direction of each area of the bottom of the target assembly gathers towards the central area of the wafer 10 to be processed, which can slightly bias the particle sputtering direction of the target 300 towards the central area of the wafer 10 to be processed, thereby improving the surface coverage rate and the uniformity of the coating film of the wafer 10 to be processed, and in a specific embodiment, the included angle θ=0° to 45 °, for example, may be 15 °, 30 ° or 45 °. In this embodiment, the target 300 and the backing plate 320 are both tapered, and it should be understood that in other embodiments, only the lower surface of the target 300 may be tapered, and it should be understood that this embodiment provides the entire target with a tapered shape, so that the thickness of each region is uniform, which is advantageous for saving the cost of the target 300.

Example 4

Referring to fig. 5, the difference between the present embodiment and embodiment 1 is that: the auxiliary plasma source in this embodiment includes a microwave power source 800 and a waveguide 700, where the microwave power source 800 is used to generate a microwave signal, and the waveguide 700 is used to conduct the microwave signal to a region corresponding to the penetration window 200, so that the microwave signal can enter the reaction chamber 100 through the penetration window 200, and specifically, a signal output end of the waveguide 700 is located in the isolation cover 210, where it should be understood that the auxiliary plasma source in this embodiment is an electron cyclotron resonance plasma source. The present embodiments are directed to providing an alternative to an auxiliary plasma source to illustrate that the particular type of auxiliary plasma source is not exclusive and that in particular applications either an inductively coupled plasma source or an electron cyclotron resonance plasma source may be selected according to actual requirements.

Example 5

Referring to fig. 6, the difference between the present embodiment and embodiment 5 is that: the bottom of the target assembly is configured in a conical shape, so that the normal direction of each area of the bottom of the target assembly gathers towards the central area of the wafer 10 to be processed, and the particle sputtering direction of the target 300 is slightly deviated from the central area of the wafer 10 to be processed, which can improve the surface coverage rate of the wafer 10 to be processed and the uniformity of the coating film. The effects of this embodiment are similar to those of embodiment 3, and thus will not be described again.

Based on the physical vapor deposition equipment, the following describes the application scenario of the invention in combination with several manufacturing processes:

a deposition process comprising the steps of:

providing the physical vapor deposition equipment, and installing a wafer to be processed in the reaction cavity 100;

adjusting the reaction cavity 100 to a target pressure, and introducing a working gas;

a first dc voltage is applied to the target assembly and a first rf bias is applied to the wafer pedestal 400.

The power of the first direct current voltage is 10-20 KW, and the power of the first radio frequency bias voltage is 0-300W.

The above deposition process may be applied to DC (direct current) low energy deposition, for example:

TaN deposition, the specific process parameters are as follows: dc=10 to 20kw, ar=4 to 20sccm, n2=25 to 40sccm, rf bias power=0 to 300W, process pressure=2 to 25mT; wherein DC represents direct current voltage power applied to the target (hereinafter, the same) and Ar represents argon gas volume flow rate (hereinafter, the same), and N2 represents nitrogen gas volume flow rate (hereinafter, the same).

Ta deposition, the specific process parameters are as follows: dc=10 to 20kw, ar=4 to 20 seem, n2=0 seem, rf bias power 0 to 200W, process pressure=0.2 to 10mT.

It should be noted that the process pressure mentioned in this embodiment refers to the target pressure in this embodiment. Through the deposition process in this embodiment, a dual film structure may be formed on the structure to be deposited of the wafer 10 to be processed, where the first layer in the dual film is TaN and the second layer is Ta, the first layer refers to a layer directly contacting the structure to be deposited, and the second layer refers to a layer indirectly contacting the structure to be deposited through the first layer. Of course, the triple or multiple thin film structure can be formed by the deposition process in this embodiment, and when the multiple thin film structure is required to be formed, the above process flow is only required to be repeated alternately.

The invention provides another deposition process, which comprises the following steps:

a second dc voltage is applied to the target assembly, a second rf bias is applied to the wafer pedestal 400, and a first rf voltage is applied to the auxiliary plasma source.

The power of the second direct-current voltage is 8-15 KW, the power of the second radio-frequency bias voltage is 0-300W or 300-1000W, and the power of the first radio-frequency voltage is 800-2000W.

The deposition process described above may be applied to DC (direct current) +rf (radio frequency) low bias deposition or dc+rf high bias deposition, for example:

TaN deposition, the specific process parameters are as follows:

step 1: dc=8 to 15KW, rf power=800 to 2000W, ar=4 to 20sccm, n2=25 to 40sccm, rf bias power=0 to 300W, process pressure=2 to 25mT.

Step 2: dc=8 to 15KW, rf power=800 to 2000W, ar=4 to 20sccm, n2=25 to 40sccm, rf bias power=300 to 1000W, process pressure=2 to 25mT.

Or DC+RF Ta deposition, the embodiment is the same as the previous embodiment but the Ta film is deposited, and the specific process parameters are as follows:

step 1: dc=8 to 15KW, rf power=800 to 2000W, ar=4 to 20sccm, rf bias power=0 to 300W, process pressure=0.2 to 10mT.

Step 2: dc=8 to 15KW, rf power=800 to 2000W, ar=4 to 20sccm, rf bias power=300 to 1000W, process pressure=0.2 to 10mT.

The deposition process in this embodiment utilizes the second plasma to ionize the deposited particles generated by DC bombardment of the target material, thereby increasing the metal ion density and realizing the process of synchronous deposition and sputtering by high radio frequency bias.

The invention also provides an etching process, which comprises the following steps:

providing the physical vapor deposition equipment, and installing a piece to be etched in the reaction cavity 100;

a third dc voltage is applied to the target assembly, a third rf bias is applied to the wafer pedestal 400, and a second rf voltage is applied to the auxiliary plasma source.

The power of the third direct-current voltage is 300-1000W, the power of the third radio-frequency bias voltage is 500-1200W, and the power of the second radio-frequency voltage is 500-2000W.

The etching process described above may be applied to, for example, argon ion sputtering/etching (Ar router/Etch).

In a specific embodiment, the etching process may be performed in combination with the above-mentioned deposition process, for example, DC deposition+argon ion sputtering/etching+dc deposition, wherein the DC deposition process may refer to the above-mentioned process conditions of DC low-energy deposition, and specific process parameters of the argon ion sputtering/etching are as follows:

dc=300 to 1000W, rf power=500 to 2000W, ar=4 to 20sccm, n2=0 sccm, rf bias power=500 to 1200W, process pressure=0.2 to 10mT.

The embodiment can utilize radio frequency bias to accelerate to generate high-energy argon ion sputtering, bombard TaN/Ta covered on the bottom of a deposition structure to make the TaN/Ta sputtered back to the side wall of the structure, and increase the coverage rate of the side wall.

In summary, the invention hollows out the center of the target 300 with low utilization rate and easy generation of anti-sputtering, which can reduce the material cost and simplify the operation mode of the magnetron source 1300; the target 300 can be designed with an inward inclination angle, so that the uniformity of the film is improved; an auxiliary plasma source is generated by adopting an external coil mode to replace a coil arranged in the cavity, so that the consumable cost is saved and the risk of particle defects is avoided; the penetration window 200 is arranged at the hollow part of the basket at the central part of the target 300, an external auxiliary plasma source is arranged, the ion concentration of the metal PVD is enhanced, the efficiency of guiding ions by the bias substrate can be improved by utilizing high-density ions, the coverage rate is further increased, and the technology of separate argon ion bombardment and the technology of synchronous deposition bombardment can be further realized.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

In the description herein, numerous specific details are provided, such as examples of components and/or methods, to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that an embodiment of the invention can be practiced without one or more of the specific details, or with other apparatus, systems, components, methods, components, materials, parts, and so forth. In other instances, well-known structures, materials, or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the invention.

Reference throughout this specification to "one embodiment," "an embodiment," or "a particular embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment, and not necessarily all embodiments, of the present invention. Thus, the appearances of the phrases "in one embodiment," "in an embodiment," or "in a specific embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics of any specific embodiment of the present invention may be combined in any suitable manner with one or more other embodiments. It will be appreciated that other variations and modifications of the embodiments of the invention described and illustrated herein are possible in light of the teachings herein and are to be considered as part of the spirit and scope of the invention.

It will also be appreciated that one or more of the elements shown in the figures may also be implemented in a more separated or integrated manner, or even removed because of inoperability in certain circumstances or provided because it may be useful depending on the particular application.

In addition, any labeled arrows in the drawings/figures should be considered only as exemplary, and not limiting, unless otherwise specifically indicated. Furthermore, the term "or" as used herein is generally intended to mean "and/or" unless specified otherwise. Combinations of parts or steps will also be considered as being noted where terminology is foreseen as rendering the ability to separate or combine is unclear.

As used in the description herein and throughout the claims that follow, unless otherwise indicated, "a", "an", and "the" include plural references. Also, as used in the description herein and throughout the claims that follow, unless otherwise indicated, the meaning of "in …" includes "in …" and "on …".

The above description of illustrated embodiments of the invention, including what is described in the abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed herein. Although specific embodiments of, and examples for, the invention are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention, as those skilled in the relevant art will recognize and appreciate. As noted, these modifications can be made to the present invention in light of the foregoing description of illustrated embodiments of the present invention and are to be included within the spirit and scope of the present invention.

The systems and methods have been described herein in general terms as being helpful in understanding the details of the present invention. Furthermore, various specific details have been set forth in order to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that an embodiment of the invention can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, and/or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the invention.

Thus, although the invention has been described herein with reference to particular embodiments thereof, a latitude of modification, various changes and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of the invention will be employed without a corresponding use of other features without departing from the scope and spirit of the invention as set forth. Therefore, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present invention. It is intended that the invention not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the invention should be determined only by the following claims.

Claims

1. A physical vapor deposition apparatus, comprising: the device comprises a sputtering part, a penetrating window, a reaction cavity, a magnetic control source and a wafer base;

the reaction cavity is connected with a vacuum generating device;

the magnetic control source is arranged at the top of the target assembly and is assembled to move around the penetrating window in a circular path so as to improve the uniformity of the distribution of the plasmas in the reaction cavity;

2. The physical vapor deposition apparatus according to claim 1, wherein the sputtering portion has a symmetrical structure, and a distance from any edge of the through hole to a center of the sputtering portion is 20% to 75% of a distance from any edge of the sputtering portion to the center of the sputtering portion.

3. The physical vapor deposition apparatus according to claim 1, wherein the penetration window is convexly provided in a direction away from the reaction chamber.

4. The physical vapor deposition apparatus according to claim 1, wherein the bottom of the target assembly is configured in a tapered shape such that a normal direction of each region of the bottom of the target assembly converges toward a central region of the wafer to be processed.

5. The physical vapor deposition apparatus according to claim 1, further comprising a water-cooled tray and a driving portion, the water-cooled tray comprising a cooling liquid and a carrier tray containing the cooling liquid, the water-cooled tray being for containing the magnetron source; the driving part is connected with the magnetic control source and is used for driving the magnetic control source to do circular path movement around the penetrating window in the water-cooled disc.

6. The physical vapor deposition apparatus according to claim 1, further comprising an adjusting portion provided outside the reaction chamber, and configured to be capable of generating a magnetic field that uniformly distributes plasma in the reaction chamber.

7. The physical vapor deposition apparatus of claim 6, wherein the adjustment portion comprises at least one of a plurality of ring-shaped magnet sets, a plurality of electromagnetic coils, or a plurality of permanent magnet combinations.

8. The physical vapor deposition apparatus of claim 1, further comprising a radio frequency bias power source electrically coupled to the wafer pedestal for attracting ion bombardment in the plasma or deposition on a surface to be deposited of the wafer to be processed.

9. The physical vapor deposition apparatus of claim 1, further comprising an auxiliary plasma source comprising a radio frequency power supply and a number of radio frequency coils; the radio frequency coil is fixedly arranged on the outer side of the penetrating window or is wound around the penetrating window; the radio frequency power supply is used for generating the radio frequency signal, and the coil is used for assisting the penetrating window to guide the radio frequency signal into the reaction cavity.

10. The physical vapor deposition apparatus of claim 9, wherein the radio frequency coil is fixedly disposed outside the penetration window, comprising: the radio frequency coil is fixedly arranged on the outer surface of the penetrating window or is fixedly arranged in the outer cover of the penetrating window, and the outer cover is used for isolating radio frequency signals from the external environment.

11. The physical vapor deposition apparatus of claim 1, further comprising an auxiliary plasma source comprising a microwave power source and a waveguide; the microwave power supply is used for generating a microwave signal, and the waveguide tube is used for conducting the microwave signal to a region corresponding to the penetrating window so that the microwave signal can enter the reaction cavity through the penetrating window.

12. The physical vapor deposition apparatus according to claim 9 or 11, wherein a shield is provided inside a sidewall of the reaction chamber and/or an edge region of the wafer susceptor.

13. The physical vapor deposition apparatus according to claim 1, wherein a height of the wafer susceptor is set such that a vertical distance between the wafer to be processed and the target is 15cm to 50cm when the wafer to be processed is mounted on the wafer susceptor.

14. The physical vapor deposition apparatus of claim 13, wherein the wafer pedestal comprises any one of an electrostatic chuck, a vacuum chuck, and a clamp pedestal.

15. A deposition process comprising the steps of:

providing the physical vapor deposition apparatus according to any one of claims 1 to 14, and installing a wafer to be processed in the reaction chamber;

adjusting the reaction cavity to target pressure, and introducing working gas;

16. The deposition process of claim 15 wherein the first dc voltage has a power of 10 to 20KW and the first rf bias has a power of 0 to 300W.

17. A deposition process comprising the steps of:

adjusting the reaction cavity to target pressure, and introducing working gas;

18. The deposition process of claim 17 wherein the second dc voltage has a power of 8 to 15KW, the second rf bias has a power of 0 to 300W or 300 to 1000W, and the first rf voltage has a power of 800 to 2000W.

19. An etching process, comprising the steps of:

providing the physical vapor deposition equipment as claimed in any one of claims 1 to 14, and installing a piece to be etched in the reaction cavity;

adjusting the reaction cavity to target pressure, and introducing working gas;

20. The etching process of claim 19, wherein the power of the third dc voltage is 300-1000W, the power of the third rf bias is 500-1200W, and the power of the second rf voltage is 500-2000W.