CN116738512A - Method and equipment for establishing film thickness model - Google Patents
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The present disclosure provides a method and apparatus for establishing a film thickness model, which relates to the technical field of semiconductors, and is applicable to a semiconductor device to be tested, where the semiconductor device to be tested includes a plurality of thin films formed on a substrate, and the method includes: acquiring a spectrogram corresponding to the multilayer films and optical parameters of each layer of film; establishing a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulation film corresponding to each layer of film; obtaining a physical thickness value of each layer of film, and adjusting optical parameters of each layer of simulation film according to the physical thickness value until the error between the simulation thickness value of each layer of simulation film and the physical thickness value of the film corresponding to each layer of simulation film is smaller than or equal to the error threshold value of each layer of simulation film; and determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested. The embodiment of the disclosure can accurately simulate the film thickness model with a plurality of layers of films.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a method and equipment for establishing a film thickness model.
Background
In the process of manufacturing a semiconductor device, a plurality of thin films are usually required to be formed on a wafer, and the thickness of the thin films has an important effect on the performance of the finally formed semiconductor device, so that accurate measurement of the thickness of each thin film is particularly important for guaranteeing the performance of the semiconductor device.
Currently, optical tools are commonly used to measure the thickness of thin films. When the optical machine simulates the thickness of the film, the spectrogram of each layer of film needs to be collected first, and then the film thickness of each layer of film is simulated by using a special simulator based on the spectrogram of each layer of film. However, for thickness measurement of a multilayer film, it is difficult for the existing simulation method to accurately simulate a film thickness model having a multilayer film.
Disclosure of Invention
The present disclosure provides a method and apparatus for establishing a film thickness model, which can solve the technical problem that it is difficult to accurately simulate a film thickness model having a plurality of layers of films in the prior art.
In a first aspect, an embodiment of the present disclosure provides a method for establishing a film thickness model, which is applied to a semiconductor device to be tested, where the semiconductor device to be tested includes a substrate and a multilayer film formed on the substrate, and the method includes:
acquiring a spectrogram corresponding to the multilayer film and optical parameters of each layer of film;
establishing a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulated film corresponding to each layer of film;
obtaining a physical thickness value of each layer of thin film, and adjusting optical parameters of each layer of simulation thin film according to the physical thickness value until the error between the simulation thickness value of each layer of simulation thin film and the physical thickness value of the thin film corresponding to each layer of simulation thin film is smaller than or equal to an error threshold value of each layer of simulation thin film;
and determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
In some embodiments, the semiconductor device under test includes M layers of the thin film, where M is an integer greater than or equal to 2; the method further comprises the steps of:
removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein P=M-N, N is a positive integer, and M-N is not less than 1.
In some embodiments, the method further comprises:
storing the film thickness submodel in a process parameter database corresponding to a target process site; the target process station is used for generating a semiconductor device with the P layer of the film based on the film thickness submodel stored in the process parameter database.
In some embodiments, the obtaining the physical thickness value of each layer of the film includes:
and acquiring slice data of the semiconductor device to be tested, and determining the physical thickness value of each layer of thin film according to the slice data.
In some embodiments, the error threshold for each layer of the simulated film is 5% of the physical thickness value of the film corresponding to each layer of the simulated film, respectively.
In a second aspect, an embodiment of the present disclosure provides a device for creating a film thickness model, which is applied to a semiconductor device to be tested, where the semiconductor device to be tested includes a substrate and a multi-layer film formed on the substrate, and the device includes:
the detection module is used for acquiring a spectrogram corresponding to the multilayer film and optical parameters of each layer of film;
the model building module is used for building a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulation film corresponding to each layer of film;
the adjusting module is used for obtaining the physical thickness value of each layer of film, and adjusting the optical parameter of each layer of analog film according to the physical thickness value until the error between the analog thickness value of each layer of analog film and the physical thickness value of the film corresponding to each layer of analog film is smaller than or equal to the error threshold value of each layer of analog film;
and the determining module is used for determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
In some embodiments, the semiconductor device under test includes M layers of the thin film, where M is an integer greater than or equal to 2; the apparatus further comprises a splitting module for:
removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein P=M-N, N is a positive integer, and M-N is not less than 1.
In some embodiments, the apparatus further comprises a processing module for:
storing the film thickness submodel in a process parameter database corresponding to a target process site; the target process station is used for generating a semiconductor device with the P layer of the film based on the film thickness submodel stored in the process parameter database.
In some embodiments, the adjustment module is to:
and acquiring slice data of the semiconductor device to be tested, and determining the physical thickness value of each layer of thin film according to the slice data.
In some embodiments, the error threshold for each layer of the simulated film is 5% of the physical thickness value of the film corresponding to each layer of the simulated film, respectively.
In a third aspect, an embodiment of the present disclosure provides a computer-readable storage medium having stored therein computer-executable instructions that, when executed by a computer, implement a method for establishing a film thickness model as provided in the first aspect.
The method and the device for establishing the film thickness model change the mode of establishing the film model layer by layer in the prior art, directly establish the film thickness model with the largest film layer number, regulate the simulation thickness of the uppermost layer of simulation film during simulation, and regulate the simulation thickness of the rest of simulation films below, thereby accurately obtaining the film thickness model with the multilayer films and solving the technical problem that the film thickness model with the multilayer films is difficult to accurately simulate in the prior art.
Drawings
FIG. 1 is a schematic diagram of a process for modeling film thickness in accordance with an embodiment of the present disclosure;
FIG. 2 is a schematic flow chart of steps of a method for creating a film thickness model according to an embodiment of the disclosure;
FIG. 3 is a flowchart illustrating another step of a method for creating a film thickness model according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of another process for modeling film thickness in accordance with an embodiment of the present disclosure;
fig. 5 is a schematic program module of an apparatus for creating a film thickness model according to an embodiment of the disclosure.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure. Furthermore, while the disclosure has been presented by way of example only, it should be appreciated that various aspects of the disclosure may be separately implemented in a complete embodiment.
It should be noted that the brief description of the terms in the present disclosure is only for convenience in understanding the embodiments described below, and is not intended to limit the embodiments of the present disclosure. Unless otherwise indicated, these terms should be construed in their ordinary and customary meaning.
The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between similar or similar objects or entities and not necessarily for describing a particular sequential or chronological order, unless otherwise indicated. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the disclosure are, for example, capable of operation in sequences other than those illustrated or otherwise described herein.
Furthermore, the terms "comprise" and "have," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to those elements expressly listed, but may include other elements not expressly listed or inherent to such product or apparatus.
The term "module" as used in the embodiments of the present disclosure refers to any known or later developed hardware, software, firmware, artificial intelligence, fuzzy logic, or combination of hardware or/and software code that is capable of performing the function associated with that element.
Embodiments of the present disclosure relate to the field of semiconductor technology, and, optionally, may be applied to chip design for dynamic random access memory (Dynamic Random Access Memory, DRAM), including simulating film thickness for each process in the fabrication of DRAM structures.
It is understood that the production of semiconductor integrated circuits uses tens to hundreds of plating, photolithography, etching, stripping, planarization, etc. as main processes, and the thickness, uniformity, etc. of the film directly affect the quality and yield of the chip, and the thickness of the film must be measured and controlled continuously during the process.
Currently, optical techniques are commonly used to make thickness measurements of thin films. For example, the light beam may be irradiated on the surface of the film based on the interference phenomenon of light waves, and the light beam is reflected at the upper and lower surfaces of the transparent/translucent film due to the different refractive index N and extinction coefficient K of the incident medium, the film material and the base material, and the reflected light waves interfere with each other, thereby forming interference light, the intensity of which at different phases will vary with the thickness of the film. The thickness of the film can be calculated by detecting the interference light and combining a proper optical model.
In the conventional measurement technique, for thickness measurement of a plurality of thin films, an optical machine needs to collect a spectrum chart of each thin film when simulating the thickness of the thin film, then simulate a first thin film by using a simulator based on the spectrum chart of the first thin film, then simulate a second thin film by using the simulator based on the spectrum chart of the second thin film, and so on, to obtain a thin film thickness model with a plurality of thin films. However, in this process, because of the interaction between the film layers, when simulating the second layer and above, in order to match the thickness of the film that is currently simulated with the actual thickness of the film, the thickness of the film that has been simulated before is often changed, which results in that the thickness model of the film that is generated with multiple layers of films has only the thickness value of the uppermost film being accurate, and the thickness values of the remaining films cannot guarantee the accuracy thereof.
For a better understanding of the disclosed embodiments, referring to fig. 1, fig. 1 is a schematic diagram of a process for modeling film thickness in accordance with an embodiment of the present disclosure.
As shown in fig. 1, the optical machine simulates a film 1 on a substrate 101 by using a simulator based on a spectrogram of a first layer of film to obtain a film thickness model one; simulating a film 2 on the film 1 by using the simulator based on the spectrogram of the second layer of film to obtain a film thickness model II; based on the spectrogram of the third layer film, film 3 was simulated on film 2 using the simulator described above, resulting in film thickness model three. In this process, because the film layers have interactions, when the film 2 is simulated on the film 1, the thickness of the film 1 may be changed, so that the accuracy of the thickness of the film 1 in the film thickness model two cannot be ensured; similarly, when simulating film 3 on film 2, it is possible to change the thickness of film 1 and/or film 2 that has been previously simulated, resulting in the inability to ensure accuracy in the thickness of film 1 and film 2 in film thickness model three.
In view of the above technical problems, embodiments of the present disclosure provide a method and an apparatus for establishing a film thickness model, by changing a manner of establishing a film model layer by layer in the prior art, a film thickness model with the largest number of film layers is first simulated, and during simulation, not only the thickness of the uppermost film layer but also the thickness of the remaining film layer below are also adjusted. After the film thickness model with the largest number of film layers is obtained, the film model with any number of film layers can be accurately obtained by splitting the films in the film thickness model. Reference is made to the following examples for detailed embodiments.
It should be noted that, the method and the device for establishing the film thickness model provided in the embodiments of the present disclosure may be applied to a DRAM, or may be applied to other types of memories or integrated circuits, which are not limited in the embodiments of the present disclosure.
Referring to fig. 2, fig. 2 is a schematic flow chart of steps of a method for establishing a film thickness model according to an embodiment of the disclosure.
In some embodiments of the present disclosure, the method for creating a film thickness model may be applied to a semiconductor device to be tested, where the semiconductor device to be tested includes a substrate and a plurality of thin films formed on the substrate, and the method for creating a film thickness model includes:
s201, obtaining a spectrogram corresponding to the multilayer films and optical parameters of each layer of film.
In some embodiments, after the wafer has deposited all of the desired multilayer films, the corresponding spectral patterns of the multilayer films may be measured.
The previous manufacturing process of the integrated circuit generally comprises oxidation diffusion, film deposition, glue spreading and developing, photoetching, ion implantation, etching, cleaning, detection and the like, wherein the film deposition is one of the core processes and is used for alternately stacking insulating dielectric films such as SiO2, siN and the like and metal conductive films such as Al, cu and the like on the surface of a wafer by a physical/chemical method, and mask pattern transfer (photoetching), etching and the like can be performed on the films to finally form each layer of circuit structure. Thin film deposition techniques may be considered "additive processes" in the previous fabrication because thin film deposition techniques are required to repeatedly stack thin films on wafers in the fabrication process.
In some embodiments, after the deposition of the multilayer thin film on the wafer, a beam is irradiated onto the surface of the multilayer thin film according to a preset angle, and a spectrum corresponding to the multilayer thin film is obtained by collecting reflected beams generated by the beam on the upper and lower surfaces of the multilayer thin film.
Optionally, the optical parameters include a refractive index N and an extinction coefficient K.
The refractive index N may also be referred to as a refractive index, and may be used to measure the refractive index of the film to light. The extinction coefficient K is used to describe the absorption characteristics of the material for light, and represents the degree to which the intensity of light decreases as it passes through the material, and can be used to measure the degree of reflection of light by the film.
In some embodiments, since different incident mediums, film materials and substrate materials have different refractive indexes N and extinction coefficients K, the optical parameters of each film may be obtained according to the film materials of each film.
Optionally, the optical parameters are Non-Patterned Wafer (NPW), that is, optical parameters of each layer of thin film on the bare silicon Wafer.
Alternatively, in some embodiments, the refractive index N and the extinction coefficient K described above may be set by a skilled person or obtained empirically.
S202, establishing a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulation film corresponding to each layer of the film.
In some embodiments, after the optical bench obtains the spectrogram corresponding to the thin film layers and the optical parameters of each thin film layer, a simulator in the optical bench can be utilized to simulate the required thin film thickness model.
For example, assuming that 3 thin films are deposited on the substrate of the semiconductor device under test, the simulated thin film thickness model will also have 3 simulated thin films.
S203, obtaining a physical thickness value of each layer of film, and adjusting optical parameters of each layer of simulation film according to the physical thickness value until the error between the simulation thickness value of each layer of simulation film and the physical thickness value of the film corresponding to each layer of simulation film is smaller than or equal to the error threshold value of each layer of simulation film.
In some embodiments, slice data of the semiconductor device under test may be acquired, and a physical thickness value of each layer of thin film may be determined based on the slice data.
Wherein the slice data belongs to physical disruption analysis (Physical Failure Analysis, PFA) data.
The PFA is a technology for carrying out chip test analysis through physical test equipment and an electric leakage microscope, and comprises a process of carrying out ungrooving on a component sample and a series of test and analysis carried out before and after ungrooving, so that the line width, thickness and component equivalence of a test structure in a test component can be obtained according to requirements, and slicing and observation are needed to be carried out on the position where a defect occurs in many times so as to determine the specific position where the defect occurs.
In some embodiments, the semiconductor device under test may be diced in a direction perpendicular to the multilayer film, and dicing data of the semiconductor device under test may be detected by a detecting device.
Alternatively, a scanning electron microscope (Scanning Electron Microscope, SEM) or a transmission electron microscope (Transmission Electron Microscope, TEM) may be used to obtain a tangential image of the semiconductor device under test, and then the physical thickness value of each thin film in the semiconductor device under test is measured based on the tangential image.
It will be appreciated that the thickness of the same film may be different at different locations and thus the physical thickness values may be the thickness values of each film at a plurality of different locations.
In some embodiments, after determining the physical thickness value of each film, the optical parameter of each simulated film may be adjusted until an error between the simulated thickness value of each simulated film and the physical thickness value of the film corresponding to each simulated film is less than or equal to an error threshold of each simulated film.
Optionally, the optical parameters of each layer of the simulated thin film may be adjusted based on a curve fitting technique until the error between the simulated thickness value of each layer of the simulated thin film and its corresponding physical thickness value is less than or equal to the error threshold value of each layer of the simulated thin film.
In some embodiments, the error threshold value of each simulated film is n% of the physical thickness value of the film corresponding to each simulated film; wherein n is more than 0 and less than 10.
For example, the error threshold of any analog film may be 5% of the physical thickness value of its corresponding film, which is not limiting in the embodiments of the present disclosure.
S204, determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
In the embodiment of the disclosure, after the error between the simulated thickness value of each layer of simulated film and the physical thickness value of the corresponding film is smaller than or equal to the error threshold value of each layer of simulated film by adjusting the optical parameter of each layer of simulated film, the adjusted film thickness model can be determined as the target film thickness model of the semiconductor device to be tested.
Wherein, the target film thickness model comprises the final simulation thickness value of each layer of simulation film.
The method for establishing the film thickness model changes the mode of establishing the film model layer by layer in the prior art, directly establishes the film thickness model with the largest film layer number, adjusts the thickness of the uppermost film layer during simulation, and adjusts the thickness of the rest film below, thereby accurately obtaining the film thickness model with the multi-layer film, and solving the technical problem that the film thickness model with the multi-layer film is difficult to accurately simulate in the prior art.
Based on the descriptions in the foregoing embodiments, referring to fig. 3, fig. 3 is a flowchart illustrating another step of a method for creating a film thickness model according to an embodiment of the disclosure. In some embodiments of the present disclosure, the method for creating a film thickness model may be applied to a semiconductor device to be tested, where the semiconductor device to be tested includes a substrate and a plurality of thin films formed on the substrate, and the method for creating a film thickness model includes:
s301, obtaining a spectrogram corresponding to the multilayer films and optical parameters of each layer of film.
S202, establishing a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulation film corresponding to each layer of the film.
S303, obtaining the physical thickness value of each layer of film, and adjusting the optical parameter of each layer of simulation film according to the physical thickness value until the error between the simulation thickness value of each layer of simulation film and the physical thickness value of the film corresponding to each layer of simulation film is smaller than or equal to the error threshold value of each layer of simulation film.
S304, determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
It can be understood that the content of the implementation of the steps S301 to S304 is identical to the content of the implementation of the steps S201 to S204 described in the above embodiment, and specific reference may be made to the content described in the above embodiment, which is not repeated in the embodiments of the present disclosure.
S305, removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein, p=m-N, M is the number of layers of the thin film in the semiconductor device to be tested.
For example, assuming that 3 thin films are deposited on the substrate of the semiconductor device under test, the simulated thin film thickness model will also have 3 simulated thin films. Removing 1 layer of simulation film in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with 2 layers of simulation films; and removing 2 layers of simulation films in the target film thickness model to obtain a film thickness submodel with 1 layer of simulation films.
For a better understanding of the disclosed embodiments, referring to fig. 4, fig. 4 is a schematic diagram of another process for modeling film thickness in accordance with an embodiment of the present disclosure.
As shown in fig. 4, the film thickness model has 3 layers of simulation films, and 1 layer of simulation film in the target film thickness model is removed according to the sequence from top to bottom, so that a film thickness sub-model one with 2 layers of simulation films can be obtained; and removing 1 layer of simulation film in the first film thickness submodel to obtain a second film thickness submodel with 1 layer of simulation film. And removing 2 layers of simulation films in the target film thickness model at one time according to the sequence from top to bottom to directly obtain a film thickness sub-model II with 1 layer of simulation films.
According to the method for establishing the film thickness model, the film thickness model with the largest film layer number is directly established, the thickness of the uppermost film layer is adjusted during simulation, the thickness of the rest films below is also adjusted, therefore, the film thickness model with a plurality of layers of films can be accurately obtained, films in the film thickness model are split from top to bottom, the film thickness model with any layer number can be accurately obtained, and compared with the mode of establishing the film thickness model layer by layer in the prior art, the method for establishing the film thickness model layer by layer can not be affected by each other, time can be greatly saved, and the efficiency of model establishment is improved.
Based on the descriptions in the above embodiments, in some embodiments of the present disclosure, after obtaining the film thickness sub-model with the P-layer simulated film, the film thickness sub-model may be further stored in a process parameter database corresponding to the target process site. The target process station is used for generating a semiconductor device with a P-layer film based on the film thickness submodel stored in the process parameter database.
In some embodiments, after the target film thickness model of the semiconductor device to be tested is obtained, a film thickness sub-model corresponding to the last process station can be obtained by removing one layer of the simulation film in the target film thickness model according to the sequence from top to bottom.
In some embodiments, the resulting film thickness submodel may be stored to its corresponding process station, which may complete a corresponding process sequence based on the film thickness submodel.
According to the method for establishing the film thickness model, after the film thickness model with the multi-layer films is obtained, the film thickness model with any layer number can be accurately obtained by splitting films in the film thickness model, and the obtained film thickness model is stored in a corresponding process station, so that the film thickness measurement efficiency can be effectively improved.
Based on the description of the embodiments, the embodiment of the disclosure also provides a device for establishing a film thickness model, which is applied to a semiconductor device to be tested, wherein the semiconductor device to be tested comprises a substrate and a plurality of layers of films formed on the substrate. Referring to fig. 5, fig. 5 is a schematic program module of an apparatus for creating a film thickness model according to an embodiment of the present disclosure, where the apparatus for creating a film thickness model 50 includes:
the detection module 501 is configured to obtain a spectrogram corresponding to the multiple layers of films, and optical parameters of each layer of the films.
The model building module 502 is configured to build a film thickness model according to the spectrogram and the optical parameter, where the film thickness model includes a simulated film corresponding to each layer of the film.
And the adjusting module 503 is configured to obtain a physical thickness value of each layer of the thin film, and adjust an optical parameter of each layer of the analog thin film according to the physical thickness value until an error between the analog thickness value of each layer of the analog thin film and the physical thickness value of the thin film corresponding to each layer of the analog thin film is less than or equal to an error threshold of each layer of the analog thin film.
A determining module 504, configured to determine the adjusted film thickness model as a target film thickness model of the semiconductor device under test.
The device for establishing the film thickness model changes the mode of establishing the film model layer by layer in the prior art, directly establishes the film thickness model with the largest film layer number, adjusts the thickness of the uppermost film layer during simulation, and adjusts the thickness of the rest films below, thereby accurately obtaining the film thickness model with the multi-layer films, and solving the technical problem that the film thickness model with the multi-layer films is difficult to accurately simulate in the prior art.
In some embodiments, the semiconductor device under test includes M layers of the thin film, where M is an integer greater than or equal to 2; the apparatus further comprises a splitting module for:
removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein P=M-N, N is a positive integer, and M-N is not less than 1.
In some embodiments, the apparatus further comprises a processing module for:
storing the film thickness submodel in a process parameter database corresponding to a target process site; the target process station is used for generating a semiconductor device with the P layer of the film based on the film thickness submodel stored in the process parameter database.
In some embodiments, the adjustment module 503 is to:
and acquiring slice data of the semiconductor device to be tested, and determining the physical thickness value of each layer of thin film according to the slice data.
In some embodiments, the optical parameters include refractive index and extinction coefficient.
In some embodiments, the error threshold for each simulated film is 5% of the physical thickness value of the film for each simulated film, respectively.
It should be noted that, in the embodiment of the disclosure, the specific execution of the detection module 501, the adjustment module 503 of the model creation module 502, and the determination module 504 may refer to the relevant content in the embodiment shown in fig. 1 to 4, which is not described herein.
Further, based on the foregoing embodiments, a computer readable storage medium is further provided in the embodiments of the present disclosure, where computer executable instructions are stored in the computer readable storage medium, and when the processor executes the computer executable instructions, the steps in the method for establishing a film thickness model as described in the foregoing embodiments are implemented, which is not described herein again.
In the several embodiments provided in the present disclosure, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described embodiments of the apparatus are merely illustrative, and for example, the above-described division of modules is merely a logical function division, and there may be other manners of division in actual implementation, for example, multiple modules may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or modules, which may be in electrical, mechanical, or other forms.
The modules described above as separate components may or may not be physically separate, and components shown as modules may or may not be physical units, may be located in one place, or may be distributed over multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional module in the embodiments of the present disclosure may be integrated in one processing unit, or each module may exist alone physically, or two or more modules may be integrated in one unit. The integrated units of the modules can be realized in a form of hardware or a form of hardware and software functional units.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present disclosure, and not for limiting the same; although the present disclosure has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.
Claims (10)
1. A method of establishing a film thickness model, characterized by being applied to a semiconductor device to be tested, the semiconductor device to be tested comprising a substrate and a plurality of thin films formed on the substrate, the method comprising:
acquiring a spectrogram corresponding to the multilayer film and optical parameters of each layer of film;
establishing a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulated film corresponding to each layer of film;
obtaining a physical thickness value of each layer of thin film, and adjusting optical parameters of each layer of simulation thin film according to the physical thickness value until the error between the simulation thickness value of each layer of simulation thin film and the physical thickness value of the thin film corresponding to each layer of simulation thin film is smaller than or equal to an error threshold value of each layer of simulation thin film;
and determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
2. The method of claim 1, wherein the semiconductor device under test comprises M layers of the thin film, wherein M is an integer greater than or equal to 2; the method further comprises the steps of:
removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein P=M-N, N is a positive integer, and M-N is not less than 1.
3. The method according to claim 2, wherein the method further comprises:
storing the film thickness submodel in a process parameter database corresponding to a target process site; the target process station is used for generating a semiconductor device with the P layer of the film based on the film thickness submodel stored in the process parameter database.
4. A method according to any one of claims 1 to 3, wherein said obtaining a physical thickness value of each layer of said film comprises:
and acquiring slice data of the semiconductor device to be tested, and determining the physical thickness value of each layer of thin film according to the slice data.
5. The method of claim 1, wherein the error threshold for each layer of the simulated film is 5% of the physical thickness value of the film for each layer of the simulated film, respectively.
6. A thin film thickness modeling apparatus applied to a semiconductor device to be tested, the semiconductor device to be tested including a substrate and a plurality of thin films formed on the substrate, the apparatus comprising:
the detection module is used for acquiring a spectrogram corresponding to the multilayer film and optical parameters of each layer of film;
the model building module is used for building a film thickness model according to the spectrogram and the optical parameters, wherein the film thickness model comprises a simulation film corresponding to each layer of film;
the adjusting module is used for obtaining the physical thickness value of each layer of film, and adjusting the optical parameter of each layer of analog film according to the physical thickness value until the error between the analog thickness value of each layer of analog film and the physical thickness value of the film corresponding to each layer of analog film is smaller than or equal to the error threshold value of each layer of analog film;
and the determining module is used for determining the adjusted film thickness model as a target film thickness model of the semiconductor device to be tested.
7. The apparatus of claim 6, wherein the semiconductor device under test comprises M layers of the thin film, wherein M is an integer greater than or equal to 2; the apparatus further comprises a splitting module for:
removing N layers of simulation films in the target film thickness model according to the sequence from top to bottom to obtain a film thickness submodel with P layers of simulation films; wherein P=M-N, N is a positive integer, and M-N is not less than 1.
8. The apparatus of claim 7, further comprising a processing module to:
storing the film thickness submodel in a process parameter database corresponding to a target process site; the target process station is used for generating a semiconductor device with the P layer of the film based on the film thickness submodel stored in the process parameter database.
9. The apparatus according to any one of claims 6 to 8, wherein the adjustment module is configured to:
and acquiring slice data of the semiconductor device to be tested, and determining the physical thickness value of each layer of thin film according to the slice data.
10. The apparatus of claim 6, wherein the error threshold for each layer of the simulated film is 5% of the physical thickness value of the film corresponding to each layer of the simulated film.
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| CN117436355A (en) * | 2023-12-21 | 2024-01-23 | 东莞市钜欣电子有限公司 | Method for establishing optical film thickness model and related equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117436355A (en) * | 2023-12-21 | 2024-01-23 | 东莞市钜欣电子有限公司 | Method for establishing optical film thickness model and related equipment |
| CN117436355B (en) * | 2023-12-21 | 2024-04-16 | 东莞市钜欣电子有限公司 | Method for establishing optical film thickness model and related equipment |
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