CN116683888B - Surface acoustic wave resonator de-embedding method - Google Patents
Surface acoustic wave resonator de-embedding method Download PDFInfo
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- CN116683888B CN116683888B CN202310962504.0A CN202310962504A CN116683888B CN 116683888 B CN116683888 B CN 116683888B CN 202310962504 A CN202310962504 A CN 202310962504A CN 116683888 B CN116683888 B CN 116683888B
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- acoustic wave
- surface acoustic
- wave resonator
- embedding
- resonator
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000523 sample Substances 0.000 claims abstract description 8
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000284 extract Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a method for de-embedding a surface acoustic wave resonator, which can accurately extract an error box from the tip of a probe on an off-chip calibration substrate to the root of the surface acoustic wave resonator by designing a clamp with the same feed structure as the surface acoustic wave resonator on a piezoelectric substrate, is used for de-embedding the surface acoustic wave resonator and extracting a COM model, is suitable for the surface acoustic wave resonator with any frequency, size, piezoelectric substrate and cutting angle, and is an accurate and universal surface acoustic wave resonator de-embedding method.
Description
Technical Field
The invention belongs to the technical field of surface acoustic wave filters, and particularly relates to a design of a surface acoustic wave resonator de-embedding method.
Background
Surface acoustic wave filters (SAW filters) are widely used in wireless communications such as cell phones, base stations, etc. The main design tool for current SAW filters is the coupled mode (COM) model. An important element in SAW filter design is the extraction of COM models. The high-precision COM model can improve the success rate of circuit design and reduce the number of design versions due to inaccurate models. The COM model is extracted from the admittance curve of the resonator (IDT), so the accuracy of the admittance measurement of the IDT determines the accuracy of the COM model and the simulation accuracy of the SAW filter finally designed with the COM model.
Accurate measurement of SAW IDT admittance curves faces two problems. The first problem is the difference in dielectric constant between the calibration substrate and the piezoelectric substrate in which the SAW IDT is located. The use of a calibration substrate is a common technique for on-chip measurement, whereas the calibration substrate material is typically alumina with a dielectric constant of around 10. The substrates commonly used for SAW filters are lithium tantalate and lithium niobate, with dielectric constants around 50, and specific values vary with the cut angle. The higher dielectric constant of the piezoelectric substrate brings about larger parasitic capacitance in the probe test, which affects the test accuracy. The second problem is the difference in the feeding structure of the alignment substrate and IDT. The feed structure on the alignment substrate is typically a ground-signal-ground (GSG) coplanar waveguide (CPW) structure and the probe contact is around 50x50 square microns. The input and output ports of the IDT require excitation of signals and ground, and the IDT test structure, whether dual-port or single-port, involves conversion from the probe GSG CPW to the ports of the input and output of the IDT. IDTs of different frequencies are different in size, and IDTs of low frequencies are about 500×100 square micrometers in size. Thus, the difference of the feed structures brings additional parasitic parameters to influence the measurement result of the IDT. The two factors that affect IDT measurement described above require accurate de-embedding techniques to eliminate.
Port extension (port-extension) is a SAW IDT de-embedding technique that may be used in practical applications. Port extension extends the calibrated reference plane to the root of the IDT by measuring an open or short circuit device. The method is simple and quick, but has limited precision, the inaccuracy factors can not be comprehensively removed, and the use of the port extension can only achieve limited test precision.
Disclosure of Invention
The invention aims to solve the problem of accurate de-embedding in the measurement of a surface acoustic wave resonator, and provides a surface acoustic wave resonator de-embedding method.
The technical scheme of the invention is as follows: a method for de-embedding a surface acoustic wave resonator comprises the following steps:
s1, designing a clamp with the same feed structure as the surface acoustic wave resonator.
S2, respectively carrying out on-chip measurement on the surface acoustic wave resonator and the clamp.
S3, extracting parasitic parameters of the clamp and an error box from the probe tip on the off-chip calibration substrate to the root of the SAW resonator by adopting a multi-frequency calibration method according to the on-chip measurement result.
S4, de-embedding the surface acoustic wave resonator through the parasitic parameters of the clamp and the error box to obtain de-embedded S-parameters.
S5, extracting the COM model through the S-parameters after de-embedding.
S6, designing the surface acoustic wave filter through a COM model.
Further, the jig designed in step S1 includes a short circuit structure, an open circuit structure, and a resistor structure.
Further, the design method of the short circuit structure comprises the following steps: and connecting the input end and the output end of the surface acoustic wave resonator.
Further, the design method of the open circuit structure comprises the following steps: and deleting the surface acoustic wave resonator on the piezoelectric substrate.
Further, the design method of the resistor structure comprises the following steps: the surface acoustic wave resonator on the piezoelectric substrate is replaced with a thin film resistor.
Further, the thin film resistor is made of thin metal of the same layer as the surface acoustic wave resonator.
Further, the topological structure of the thin film resistor is a broken line structure.
Further, the parasitic parameters of the fixture in step S3 include parasitic capacitance, parasitic inductance, and parasitic resistance.
The beneficial effects of the invention are as follows:
(1) The fixture is designed on the piezoelectric substrate, so that an error box from the tip of the probe on the off-chip calibration substrate to the root of the surface acoustic wave resonator can be accurately extracted, the fixture is used for the de-embedding of the surface acoustic wave resonator and the extraction of a COM model, is suitable for the surface acoustic wave resonator with any frequency, size, piezoelectric substrate and chamfer, and is an accurate and universal surface acoustic wave resonator de-embedding method.
(2) Compared with the traditional method which only calculates under a single frequency point, the method extracts the error box by adopting the multi-frequency calibration method, and fully utilizes the correlation among frequencies, so that the extracted error box is more accurate.
Drawings
Fig. 1 is a flowchart of a method for de-embedding a surface acoustic wave resonator according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a short circuit structure according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of an open circuit structure according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a resistor structure according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of real part of broken line resistance according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of imaginary parts of broken line resistance impedance according to an embodiment of the present invention.
Fig. 8 is a graph showing the real part of the admittance of a resonator according to an embodiment of the present invention.
Fig. 9 is a graph of the imaginary admittance of a resonator according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely illustrative of the principles and spirit of the invention and are not intended to limit the scope of the invention.
The embodiment of the invention provides a surface acoustic wave resonator de-embedding method, which is shown in fig. 1 and comprises the following steps S1-S6:
s1, designing a clamp with the same feed structure as the surface acoustic wave resonator.
In the embodiment of the invention, as shown in fig. 2, the designed fixture comprises a short circuit structure, an open circuit structure and a resistor structure.
As shown in fig. 3, the short-circuit structure is obtained by connecting the input terminal and the output terminal of the surface acoustic wave resonator.
As shown in fig. 4, the open circuit structure is obtained by deleting the surface acoustic wave resonator on the piezoelectric substrate.
As shown in fig. 5, the resistive structure is obtained by replacing the surface acoustic wave resonator on the piezoelectric substrate with a thin film resistor. In the embodiment of the invention, the thin film resistor is made of thin metal with the same layer as the surface acoustic wave resonator, and the topological structure of the thin film resistor is a fold line structure. In the prior art SAW processes, aluminum or copper electrodes are used for the IDT layer, and their thickness and resistivity make the IDT layer suitable for realizing a low-dispersion sheet resistance.
As shown in fig. 6 and 7, the embodiment of the present invention uses IDT layer metal as a resistive layer, and the meander line resistor has small dispersion at GHz frequency, which is very suitable for being used as an impedance standard.
S2, respectively carrying out on-chip measurement on the surface acoustic wave resonator and the clamp.
S3, extracting parasitic parameters of the clamp and an error box from the probe tip on the off-chip calibration substrate to the root of the SAW resonator by adopting a multi-frequency calibration method according to the on-chip measurement result.
In the embodiment of the invention, the parasitic parameters of the clamp comprise parasitic capacitance, parasitic inductance and parasitic resistance.
In the embodiment of the invention, the Error box, namely the Error-box, refers to 2-port S-parameters for correcting systematic errors of the network analyzer, and the Error box is generally two, one is positioned on the left side of the piece to be measured, and the other is positioned on the right side of the piece to be measured.
S4, de-embedding the surface acoustic wave resonator through the parasitic parameters of the clamp and the error box to obtain de-embedded S-parameters.
S5, extracting the COM model through the S-parameters after de-embedding.
In the embodiment of the invention, the S-parameter after de-embedding needs to be converted into admittance Y, and then the COM model is extracted by using an optimization algorithm.
S6, designing the surface acoustic wave filter through a COM model.
In the embodiment of the present invention, the comparative examples before and after the deblocking are shown in fig. 8 and 9, and the admittance curves of the low-frequency temperature compensation SAW (TC-SAW) are used. It can be seen that after de-embedding, the resonant frequency (around 795 MHz) and anti-resonant frequency (around 825 MHz) of the IDT shift, and specific values of admittance change. The admittance curve after de-embedding truly reflects the acousto-electric characteristics of the IDT except the feed structure, and can be used for extraction of a COM model and subsequent filter design.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (8)
1. A method for de-embedding a surface acoustic wave resonator, comprising the steps of:
s1, designing a clamp with the same feed structure as the surface acoustic wave resonator;
s2, respectively carrying out on-chip measurement on the surface acoustic wave resonator and the clamp;
s3, extracting parasitic parameters of the clamp and an error box from the tip of the probe on the off-chip calibration substrate to the root of the surface acoustic wave resonator by adopting a multi-frequency calibration method according to the on-chip measurement result;
s4, de-embedding the surface acoustic wave resonator through the parasitic parameters of the clamp and the error box to obtain de-embedded S-parameters;
s5, extracting a COM model through the S-parameters after de-embedding;
s6, designing the surface acoustic wave filter through a COM model.
2. The saw resonator de-embedding method of claim 1, wherein the fixture designed in step S1 comprises a short circuit structure, an open circuit structure, and a resistive structure.
3. The surface acoustic wave resonator de-embedding method according to claim 2, wherein the design method of the short-circuit structure is as follows: and connecting the input end and the output end of the surface acoustic wave resonator.
4. The surface acoustic wave resonator de-embedding method according to claim 2, wherein the method for designing the open-circuit structure is as follows: and deleting the surface acoustic wave resonator on the piezoelectric substrate.
5. The surface acoustic wave resonator de-embedding method according to claim 2, wherein the resistive structure is designed by: the surface acoustic wave resonator on the piezoelectric substrate is replaced with a thin film resistor.
6. The surface acoustic wave resonator de-embedding method according to claim 5, wherein the sheet resistance is made of a thin metal of the same layer as the surface acoustic wave resonator.
7. The surface acoustic wave resonator de-embedding method of claim 5, wherein the topology of the sheet resistance is a meander line structure.
8. The saw resonator de-embedding method of claim 1, wherein the parasitic parameters of the fixture in step S3 include parasitic capacitance, parasitic inductance, and parasitic resistance.
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| CN117057168B (en) * | 2023-10-11 | 2024-02-13 | 广州市艾佛光通科技有限公司 | Method and related equipment for simulating transverse mode of surface acoustic wave resonator |
| CN118052191B (en) * | 2024-04-16 | 2024-08-06 | 无锡频岢微电子有限公司 | Acoustic model parameter lookup table construction method |
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| CN104502878A (en) * | 2014-12-26 | 2015-04-08 | 中国电子科技集团公司第十三研究所 | Microwave GaAs substrate on-chip S parameter microstrip line TRL (transistor resistor logic) calibrating member |
| CN109787580A (en) * | 2019-01-17 | 2019-05-21 | 成都频岢微电子有限公司 | A kind of SAW resonator of high quality factor and its SAW filter of composition |
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| CN115684780A (en) * | 2022-10-25 | 2023-02-03 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic signal measuring method, device, computer equipment and storage medium |
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| DE102018108961A1 (en) * | 2018-04-16 | 2019-10-17 | RF360 Europe GmbH | TF-SAW resonator with improved quality factor, RF filter and method for producing a TF-SAW resonator |
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| CN115684780A (en) * | 2022-10-25 | 2023-02-03 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromagnetic signal measuring method, device, computer equipment and storage medium |
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