CN116675608B - Method for preparing blue perovskite quantum dots in situ by single crystal powder - Google Patents

Method for preparing blue perovskite quantum dots in situ by single crystal powder Download PDF

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CN116675608B
CN116675608B CN202310635828.3A CN202310635828A CN116675608B CN 116675608 B CN116675608 B CN 116675608B CN 202310635828 A CN202310635828 A CN 202310635828A CN 116675608 B CN116675608 B CN 116675608B
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phenethylamine
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CN116675608A (en
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刘红丽
崔韬
王世荣
李祥高
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Tianjin University
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Abstract

The invention provides a method for preparing blue perovskite quantum dots by single crystal powder in situ, which comprises the steps of firstly mixing two-dimensional perovskite single crystal powder, bromide, chloride, phenethylamine hydrobromide and an organic solvent, performing heat treatment in an inert atmosphere to obtain a precursor solution, coating the precursor solution on a substrate in the inert atmosphere, and sequentially performing dropwise adding reaction solvent and annealing treatment to obtain the blue perovskite quantum dots. According to the invention, the coulomb effect provided by organic amine salt cations in phenethylamine hydrobromide and halogen in bromide and chloride is utilized to cut open an octahedral network connected with perovskite corners, the three-dimensional network structure of perovskite octahedron is prevented from continuing to grow, the grain size is controlled, single crystal powder is added to regulate and control perovskite phase distribution, non-radiative recombination caused by low-dimensional layered perovskite phase is inhibited, the energy transmission efficiency is improved, the film crystallinity formed by blue perovskite quantum dots is improved, and the luminous performance of the Lan Guanggai titanium quantum dots is remarkably improved.

Description

Method for preparing blue perovskite quantum dots in situ by single crystal powder
Technical Field
The invention relates to the technical field of luminescent materials, in particular to a method for preparing blue perovskite quantum dots in situ by single crystal powder.
Background
The perovskite light emitting diode (PELED) structure mainly comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, a metal cathode and the like, wherein the quantum dot light emitting layer is a perovskite light emitting layer film. The perovskite quantum dot has the advantages of good photoelectric property, low cost and simple synthesis process, and compared with the traditional quantum dot material, the perovskite quantum dot has the advantages of high fluorescence quantum yield and narrow half-peak width, so that the perovskite quantum dot becomes a research hot spot.
At present, the External Quantum Efficiency (EQE) of red and green perovskite quantum dot light emitting diodes (PeLEDs) breaks through 20%, and the EQE of blue light PeLEDs is only 18%, which severely restricts the full-color display application of the PeLEDs. The traditional method for synthesizing perovskite quantum dots is very rapid in the process of quantum dot nucleation and crystallization, and has more surface defects of the quantum dots, so that the method is not beneficial to carrier injection and transmission. Compared with the colloidal perovskite quantum dots, perovskite grows into a uniform and compact film directly on a transmission layer, so that defects at crystals and grain boundaries can be effectively inhibited, fluorescence quantum yield attenuation caused by self absorption can be avoided, and the perovskite thin film is an effective way of high-efficiency blue light PeLEDs. However, because of the effect of the antisolvent, the supersaturation degree of crystal nucleus in the perovskite precursor liquid film is changed, the liquid film is induced to quickly form nucleus crystallization, and perovskite phases with smaller n values are easy to form in the perovskite film prepared in situ due to the influence of lower formation energy and quick crystallization, the perovskite phases with different n values in the film exist when the perovskite phases with smaller n values are the same, the non-radiative recombination in the perovskite phases with smaller n values is very serious, the energy transfer efficiency is low, and the luminous performance of the blue light perovskite quantum dot light-emitting diode is severely limited. Therefore, how to purify perovskite phase distribution and improve the luminescence performance of blue perovskite quantum dots (i.e., blue perovskite thin films) is a technical problem that needs to be solved in the prior art.
Disclosure of Invention
The invention aims to provide a method for preparing blue perovskite quantum dots in situ by single crystal powder.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a method for preparing blue perovskite quantum dots by single crystal powder in situ, which comprises the following steps:
(1) Mixing two-dimensional perovskite single crystal powder, bromide, chloride, phenethylamine hydrobromide and an organic solvent, and performing heat treatment in an inert atmosphere to obtain a precursor solution;
(2) And (3) coating the precursor solution obtained in the step (1) on a substrate in an inert atmosphere, and then sequentially dripping a reaction solvent and carrying out annealing treatment to obtain the blue perovskite quantum dot.
Preferably, the two-dimensional perovskite single crystal powder in the step (1) includes (PEA) 2 PbBr 4 Single crystal, (PEA) 2 FAPb 2 Br 7 Single crystal, (PEA) 2 FA 2 Pb 3 Br 10 One or more of the single crystals.
Preferably, the bromide in the step (1) is CsBr, pbBr 2 One or more of FABr.
Preferably, the temperature of the heat treatment in the step (1) is 55-65 ℃; the heat treatment time is 3-6h.
Preferably, the concentration of phenethylamine hydrobromide in the precursor solution in the step (1) is 0.1-0.3mol/L.
Preferably, pb in the precursor solution in the step (1) 2+ The concentration of (C) is 0.1-0.3mol/L
Preferably, in the step (2), the substrate is a hole transport layer.
Preferably, the time for dropping the anti-solvent in the step (2) is 18-22s after coating.
Preferably, the antisolvent in step (2) is one or more of chlorobenzene, toluene, acetone, methyl acetate and ethyl acetate.
Preferably, the temperature of the annealing treatment in the step (2) is 65-75 ℃; the annealing treatment time is 7-14min.
The invention provides a method for preparing blue perovskite quantum dots (namely blue perovskite thin films) by single crystal powder in situ. According to the invention, an octahedral network connected with the corners of perovskite is cut through utilizing coulomb action provided by organic amine salt cations (namely phenethylamine cations) in phenethylamine hydrobromide and halogen in bromide and chloride, the continuous growth of a three-dimensional network structure of the perovskite octahedron is hindered, the grain size is controlled, and single crystal powder is added into a precursor solution to regulate and control the distribution of perovskite phases, so that the distribution of purified perovskite phases is realized, the non-radiative recombination caused by low-dimensional layered perovskite phases is inhibited, the energy transmission efficiency is improved, the crystallinity of a film formed by blue perovskite quantum dots is improved, and the luminous performance (electroluminescence and photoluminescence) of the Lan Guanggai perovskite quantum dots is remarkably improved. The results of the examples show that the blue perovskite quantum dots prepared in the example 1 have the strongest crystallinity, and the quantum dots prepared in the example 1 are used as the light-emitting layer, so that the prepared quantum dot light-emitting diode device has the highest external quantum efficiency and brightness and excellent light-emitting performance.
Drawings
FIG. 1 is an XRD pattern of blue perovskite quantum dots prepared according to example 1, comparative example 1 and comparative example 2 of the present invention;
FIG. 2 is a TEM image of blue perovskite quantum dots prepared according to example 1 of the present invention;
fig. 3 is a graph showing the light emission performance of the quantum dot light emitting diode according to application examples 1 to 3, wherein a is the external quantum efficiency, b is the luminance, and c is the current density.
Detailed Description
The invention provides a method for preparing blue perovskite quantum dots by single crystal powder in situ, which comprises the following steps:
(1) Mixing two-dimensional perovskite single crystal powder, bromide, chloride, phenethylamine hydrobromide and an organic solvent, and performing heat treatment in an inert atmosphere to obtain a precursor solution;
(2) And (3) coating the precursor solution obtained in the step (1) on a substrate in an inert atmosphere, and then sequentially dripping a reaction solvent and carrying out annealing treatment to obtain the blue perovskite quantum dot.
In the present invention, the raw materials used are all conventional commercial products in the art unless otherwise specified.
The invention mixes two-dimensional perovskite monocrystal powder, bromide, chloride, phenethylamine hydrobromide and organic solvent, and then carries out heat treatment in inert atmosphere to obtain precursor solution.
In the present invention, the two-dimensional perovskite single crystal powder preferably includes (PEA) 2 PbBr 4 Single crystal, (PEA) 2 FAPb 2 Br 7 Single crystal, (PEA) 2 FA 2 Pb 3 Br 10 One or more of the single crystals, more Preferably (PEA) 2 PbBr 4 And (3) single crystals.
In the present invention, the (PEA) 2 PbBr 4 The method for producing a single crystal preferably comprises the steps of:
(S1) PbBr 2 Mixing phenethylamine hydrobromide and a solvent to obtain a mixed solution;
(S2) stirring, heat treating and cooling the mixed solution obtained in the step (S1) in sequence to obtain (PEA) 2 PbBr 4 And (3) single crystals.
In the present invention, the solvent is preferably at least one of N, N-dimethylformamide and dimethyl sulfoxide. In the present invention, pb in the mixed solution 2+ The concentration of the phenethylamine cation in the mixed solution is preferably 1.8mol/L, and in the present invention, the concentration of the phenethylamine cation in the mixed solution is preferably 3.6mol/L. In the invention, phenethylamine cations and Pb in the mixed solution 2+ The molar ratio of (2) to (1) is preferred.
In the present invention, the temperature of the stirring heat treatment is preferably 65 to 75 ℃, more preferably 68 to 73 ℃. In the present invention, the time of the stirring heat treatment is preferably 1 to 3 hours, more preferably 1.5 to 2.5 hours. The invention controls the temperature and time of the stirring heat treatment in the above range to promote the full dissolution of each component. In the present invention, the cooling means is preferably cooling to room temperature at a rate of 0.5 to 1.5 ℃/h, more preferably 0.8 to 1.2 ℃/h. According to the invention, through the cooling mode, the cooling rate is controlled to control the crystallization speed, so that the quality of crystals is ensured.
In the present invention, theThe bromide is preferably CsBr, pbBr 2 One or more of FABr (phenethylamine hydrobromic acid salt). In the present invention, the concentration of bromide in the precursor solution is preferably 0.4 to 0.6mol/L, more preferably 0.47mol/L.
In the present invention, the chloride is preferably CsCl, pbCl 2 One or more of phenethylamine hydrochloride. In the present invention, the concentration of the chloride in the precursor solution is preferably 0.08 to 0.25mol/L, more preferably 0.1 to 0.2mol/L.
In the present invention, the organic solvent is preferably one or more of dimethyl sulfoxide and N, N-dimethylformamide.
In the present invention, the inert atmosphere is preferably argon.
In the present invention, the heat treatment is preferably performed under stirring. The stirring method of the present invention is not particularly limited, and stirring methods well known in the art may be employed. In the present invention, the temperature of the heat treatment is preferably 55 to 65 ℃, more preferably 58 to 63 ℃. In the present invention, the time of the heat treatment is preferably 3 to 6 hours, more preferably 3.5 to 5 hours. The present invention controls the temperature and time of the heat treatment within the above-mentioned ranges to promote sufficient dissolution of the components.
In the present invention, the concentration of phenethylamine hydrobromide in the precursor solution is preferably 0.1 to 0.3mol/L, more preferably 0.16mol/L. The concentration of phenethylamine hydrobromide in the precursor solution is in the range, so that the coulomb effect provided by phenethylamine cations in the phenethylamine hydrobromide is utilized to cut open the octahedral network connected with the perovskite corners, the three-dimensional network structure of the perovskite octahedron is prevented from continuing to grow, and the grain size is controlled.
In the present invention, pb in the precursor solution 2+ The concentration of (C) is preferably 0.1 to 0.3mol/L, more preferably 0.2mol/L. The invention controls Pb in the precursor solution 2+ The concentration of (2) is in the above range to control the number of octahedral layers in the film.
After the precursor solution is obtained, the precursor solution is coated on a substrate in inert atmosphere, and then the reaction solvent is dripped and the annealing treatment is sequentially carried out, so that the blue perovskite quantum dot is obtained.
In the present invention, the precursor solution is preferably filtered using an organic cartridge filter prior to the coating. The precursor solution is filtered through an organic needle core filter to filter out undissolved medicines and impurities. In the present invention, the coating means is preferably spin coating.
In the present invention, the substrate is preferably a hole transport layer.
In the present invention, the time for dropping the antisolvent is preferably 18 to 22 seconds after coating, more preferably 20 seconds after coating. The present invention controls the time of dropping the antisolvent within the above range to control the rate of perovskite nucleation and crystallization.
In the present invention, the antisolvent is one or more of chlorobenzene, toluene, acetone, methyl acetate and ethyl acetate.
In the present invention, the temperature of the annealing treatment is preferably 65 to 75 ℃, more preferably 68 to 72 ℃, and even more preferably 70 ℃. In the present invention, the time of the annealing treatment is preferably 7 to 14 minutes, more preferably 8 to 12 minutes, and still more preferably 10 minutes. The invention controls the temperature and time of the annealing treatment in the above range to control the size of perovskite grains.
The method for preparing the blue perovskite quantum dots by the single crystal powder in situ provided by the invention is simple to operate, mild in reaction condition and suitable for large-scale production.
The technical solutions of the present invention will be clearly and completely described in the following in connection with the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The method for preparing the blue perovskite quantum dots by the single crystal powder in situ comprises the following steps:
(1) Will (PEA) 2 PbBr 4 Single crystal, csBr,PbBr 2 、PbCl 2 Dissolving phenethylamine hydrobromide in dimethyl sulfoxide, mixing, and performing heat treatment for 4h in an argon environment at 60 ℃ under stirring to obtain a precursor solution;
said (PEA) 2 PbBr 4 The preparation method of the single crystal comprises the following steps:
(S1) PbBr 2 Mixing phenethylamine hydrobromide and N, N-dimethylformamide to obtain a mixed solution;
pb in the mixed solution 2+ The concentration of phenethylamine cations in the mixed solution is 1.8mol/L, the concentration of phenethylamine cations in the mixed solution is 3.6mol/L, and the concentration of phenethylamine cations and Pb in the mixed solution is 1.8mol/L 2+ The concentration ratio of (2) to (1);
(S2) subjecting the mixed solution obtained in the step (S1) to stirring heat treatment at 70 ℃ for 2 hours, stopping stirring after complete dissolution, and then cooling to room temperature at a speed of 1 ℃/h to obtain (PEA) 2 PbBr 4 A single crystal;
the concentration of CsBr in the precursor solution is 0.21mol/L; pbBr in the precursor solution 2 The concentration of (2) is 0.1mol/L; pbCl in the precursor solution 2 The concentration of (2) is 0.1mol/L; the concentration of phenethylamine hydrobromide in the precursor solution is 0.16mol/L; pb in the precursor solution 2+ The concentration of (C) was 0.2mol/L.
(2) And (3) filtering the precursor solution obtained in the step (1) by using an organic needle core filter, spin-coating the filtered precursor solution on a hole transport layer, and annealing at 70 ℃ for 10min to form the blue perovskite quantum dot.
Application example 1
Blue perovskite quantum dots were prepared according to the method of example 1, and quantum dot light emitting diodes were further prepared using the Lan Guanggai titanium quantum dots as light emitting layers, as follows:
(1) Spin coating PEDOT: PSS is arranged on the anode ITO to form a hole injection layer;
(2) Mixing chlorobenzene and PVK polyvinylcarbazole to obtain PVK dispersion; spin-coating the PVK dispersion liquid on the surface of the hole injection layer obtained in the step (1), and annealing at 140 ℃ for 15min for forming to form a hole transport layer;
(3) Preparing blue perovskite quantum dots on the surface of the hole transport layer (namely, as a substrate) obtained in the step (2) according to the method of the embodiment 1 to form a light-emitting layer;
(4) Evaporating the surface of the light-emitting layer obtained in the step (3) by using TPBi as a raw material to form an evaporating electron transport layer; vacuum degree of 6×10 during vapor deposition -4 pa;
(5) Evaporating the surface of the evaporated electron transport layer obtained in the step (4) by using LiF as a raw material to form an electron injection layer; vacuum degree of 6×10 during vapor deposition -4 pa;
(6) Evaporating the surface of the electron injection layer obtained in the step (4) by using aluminum as a raw material to form a cathode, thereby obtaining a quantum dot light-emitting diode; vacuum degree of 6×10 during vapor deposition -4 pa, guarantee the stability of evaporation rate.
Comparative example 1
Blue perovskite quantum dots were prepared according to the method of example 1, differing from example 1 in that: in preparing the precursor solution, 50% by mass of the precursor solution (PEA) 2 PbBr 4 Equivalent PbBr for single crystal 2 And phenethylamine hydrobromide.
Application example 2
The quantum dot light emitting diode was prepared according to the method of application example 1, which is different from application example 1 in that: blue perovskite quantum dots were prepared according to the method of comparative example 1.
Comparative example 2
Blue perovskite quantum dots were prepared according to the method of example 1, differing from example 1 in that: when preparing the precursor solution, no addition (PEA) was made 2 PbBr 4 Single crystal is used as raw material, and equivalent PbBr is fully adopted 2 And phenethylamine hydrobromide instead (PEA) 2 PbBr 4 And (3) single crystals.
Application example 3
The quantum dot light emitting diode was prepared according to the method of application example 1, which is different from application example 1 in that: blue perovskite quantum dots were prepared according to the method of comparative example 2.
The blue perovskite quantum dots prepared in example 1, comparative example 1 and comparative example 2 were observed and detected by an X-ray diffractometer, and XRD patterns were obtained as shown in FIG. 1. It is understood from FIG. 1 that the crystallinity of the blue perovskite quantum dots prepared in example 1 is strongest, which means that the crystallinity of the prepared blue perovskite quantum dot luminescent layer film is enhanced when the single crystal content is increased.
The blue perovskite quantum dots prepared in example 1 were observed and detected by a transmission electron microscope to obtain a TEM image as shown in fig. 2, and as can be seen from fig. 2, the perovskite with the cubic phase of the blue perovskite quantum dots prepared in example 1.
Luminescence performance detection
Tests under nitrogen environment by using a Keithley2400 source meter and a ChromaMeterCS-2000 show that the quantum dot light-emitting diode prepared by taking the blue perovskite quantum dots prepared in example 1 as a light-emitting layer and the quantum dot light-emitting diode prepared by taking the blue perovskite quantum dots prepared in comparative example 2 as a light-emitting layer are tested, and the light-emitting performance is shown in a graph in FIG. 3, wherein a in FIG. 3 is external quantum efficiency, b in FIG. 3 is brightness, c in FIG. 3 is current density, and it can be seen that the addition of single crystals leads to significant improvement of the external quantum efficiency and brightness of the quantum dot light-emitting diode prepared by taking the blue perovskite quantum dots prepared in example 1 as the light-emitting layer because the addition of single crystals improves the crystallinity of the blue perovskite quantum dot light-emitting layer film prepared in example 1 and realizes regulation of n-value distribution of the perovskite film, so that energy transmission is more effective.
In conclusion, the crystallinity of the blue perovskite quantum dots prepared in the embodiment 1 of the invention is strongest, and the blue perovskite quantum dots prepared in the embodiment 1 are used as the light-emitting layer, so that the external quantum efficiency and the brightness of the prepared quantum dot light-emitting diode device are highest, and the light-emitting performance is excellent.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (8)

1. A method for preparing blue perovskite quantum dots by single crystal powder in situ comprises the following steps:
(1) Will (PEA) 2 PbBr 4 Single crystal, csBr, pbBr 2 、PbCl 2 Mixing phenethylamine hydrobromide and an organic solvent, and performing heat treatment in an inert atmosphere to obtain a precursor solution;
(2) And (3) coating the precursor solution obtained in the step (1) on a substrate in an inert atmosphere, and then sequentially dripping a reaction solvent and carrying out annealing treatment to obtain the blue perovskite quantum dot.
2. The method according to claim 1, wherein the temperature of the heat treatment in step (1) is 55 to 65 ℃; the heat treatment time is 3-6h.
3. The method according to claim 2, wherein the concentration of phenethylamine hydrobromide in the precursor solution in step (1) is 0.1 to 0.3mol/L.
4. The method according to claim 3, wherein Pb in the precursor solution in the step (1) 2+ The concentration of (C) is 0.1-0.3mol/L
5. The method of claim 4, wherein the substrate in step (2) is a hole transport layer.
6. The method of claim 5, wherein the time for dropping the antisolvent in step (2) is 18-22s after coating.
7. The method of claim 6, wherein the antisolvent in step (2) is one or more of chlorobenzene, toluene, acetone, methyl acetate, and ethyl acetate.
8. The method of claim 7, wherein the temperature of the annealing treatment in step (2) is 65-75 ℃; the annealing treatment time is 7-14min.
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CN112397649A (en) * 2020-11-11 2021-02-23 北京大学 Preparation method of large-area perovskite semiconductor single crystal film
CN113991045A (en) * 2021-10-11 2022-01-28 苏州大学 Pure blue light perovskite luminescent layer, preparation method thereof and light emitting diode
CN114149641A (en) * 2021-12-13 2022-03-08 南开大学 Perovskite metal halide zero-dimensional quantum dot/polymer composite material, preparation method thereof and application of organic amine salt
CN114395801A (en) * 2022-01-21 2022-04-26 华中科技大学温州先进制造技术研究院 Preparation method of large-size and high-quality two-dimensional halide perovskite single crystal
CN115915876A (en) * 2022-09-29 2023-04-04 西北工业大学 Preparation method of amino acid regulated blue light calcium titanium light-emitting diode

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