CN116666521A - Light emitting device, display apparatus, and repair method of display apparatus - Google Patents

Light emitting device, display apparatus, and repair method of display apparatus Download PDF

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Publication number
CN116666521A
CN116666521A CN202310647252.2A CN202310647252A CN116666521A CN 116666521 A CN116666521 A CN 116666521A CN 202310647252 A CN202310647252 A CN 202310647252A CN 116666521 A CN116666521 A CN 116666521A
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China
Prior art keywords
electrode
semiconductor layer
substrate
light
emitting device
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CN202310647252.2A
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Chinese (zh)
Inventor
王光加
叶利丹
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HKC Co Ltd
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HKC Co Ltd
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Priority to CN202310647252.2A priority Critical patent/CN116666521A/en
Publication of CN116666521A publication Critical patent/CN116666521A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/08Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12Test circuits or failure detection circuits included in a display system, as permanent part thereof

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a light emitting device, a display device and a repairing method of the display device. The light-emitting device comprises a substrate, a first semiconductor layer, a first electrode, a second semiconductor layer, a second electrode and a composite light-emitting layer, wherein the first semiconductor layer and the second semiconductor layer are laminated on one side of the substrate, the composite light-emitting layer is arranged between the first semiconductor layer and the second semiconductor layer, the first electrode is arranged on the first semiconductor layer, the second electrode is arranged on the second semiconductor layer, at least two second semiconductor layers and at least two composite light-emitting layers are arranged, each composite light-emitting layer is connected with one second semiconductor layer and one first semiconductor layer, and each second semiconductor layer is provided with a second electrode. According to the invention, by arranging at least two second semiconductor layers and the composite light-emitting layer, each second semiconductor layer is provided with one second electrode, when the second electrode, the second semiconductor layer or the composite light-emitting layer has bad process, the array substrate can be electrically connected with other second electrodes, so that the display yield is improved.

Description

Light emitting device, display apparatus, and repair method of display apparatus
Technical Field
The invention relates to the technical field of display, in particular to a light emitting device, display equipment using the light emitting device and a repairing method based on the display equipment.
Background
In micro and miniled display devices, an LED light emitting chip is a main light emitting device in the display device, and a conventional light emitting device generally has only one light emitting structure, that is, the light emitting structure sequentially includes, from bottom to top: the light-emitting device comprises a substrate, an N-type semiconductor layer, an electron-hole composite light-emitting layer and a P-type semiconductor layer, wherein N electrodes and P electrodes are respectively arranged on the N-type semiconductor layer and the P-type semiconductor layer, the P electrodes of the light-emitting structure are electrically connected with P electrode pads on an array substrate, and the N electrodes of the light-emitting structure are electrically connected with N electrode pads on the array substrate. Because the number of the light emitting devices in the display device is huge, the detection means is limited, and the detection is usually carried out after the huge transfer, if a certain light emitting device cannot emit light or emits light abnormally in the detection process, the light emitting device which is abnormally displayed is disconnected, and then the light emitting device does not emit light any more, so that a plurality of dark spots appear in the display device, and the display quality and the yield are seriously reduced.
Disclosure of Invention
The main purpose of the present invention is to provide a light emitting device, which aims to improve the problems of low display quality and yield of a display device.
In order to achieve the above object, the light emitting device according to the present invention includes a substrate, a first semiconductor layer, a first electrode, a second semiconductor layer, a second electrode, and a composite light emitting layer, wherein the first semiconductor layer and the second semiconductor layer are stacked on one side of the substrate, the composite light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, the first electrode is disposed on the first semiconductor layer, the second electrode is disposed on the second semiconductor layer, at least two of the second semiconductor layer and the composite light emitting layer are disposed, each of the composite light emitting layers is connected to one of the second semiconductor layer and the first semiconductor layer, and each of the second semiconductor layers is disposed with one of the second electrodes.
In an embodiment, the first semiconductor layer is provided with a second semiconductor layer on a side facing the substrate and a side facing away from the substrate, and the composite light emitting layer is disposed between the first semiconductor layer and each of the second semiconductor layers.
In an embodiment, defining a projection area of the second electrode layer on the substrate, which is arranged on one side of the first semiconductor layer facing the substrate, as S1;
defining the projection area of the second electrode layer arranged on one side of the first semiconductor layer away from the substrate on the substrate as S2;
defining the projection area of the first semiconductor layer on the substrate as S3, wherein S1 & gt S3 & gt S2.
In an embodiment, the two second electrodes are not arranged flush on a side facing away from the substrate.
In an embodiment, a side of the first electrode facing away from the substrate is arranged flush with a side of one of the two second electrodes facing away from the substrate.
In an embodiment, two of said second electrodes are arranged adjacent.
In an embodiment, at least two first semiconductor layers are disposed, one second semiconductor layer is disposed between at least two first semiconductor layers, one composite light emitting layer is disposed between each second semiconductor layer and each first semiconductor layer, one first electrode is disposed on each first semiconductor layer, and at least two first electrodes are not disposed on a side of the substrate facing away from the first electrode.
In an embodiment, at least two first semiconductor layers are stacked in a direction perpendicular to the substrate, and a second semiconductor layer is disposed between every two adjacent first semiconductor layers, and a composite light emitting layer is disposed between each first semiconductor layer and between each second semiconductor layer.
The invention also provides display equipment, which comprises an array substrate and the light-emitting device, wherein the array substrate is provided with a first electrode pad and a second electrode pad, the first electrode pad is electrically connected with a first electrode, and the second electrode pad is electrically connected with a second electrode.
In an embodiment, a second signal line is further disposed on the array substrate, at least two second electrode pads are disposed at intervals, and at least two second electrode pads are connected in parallel to the second signal line.
The invention also provides a repairing method of the display equipment, wherein the display equipment is the display equipment, two of at least two second electrode pads are respectively a connecting electrode pad and a disconnecting electrode pad, two of at least two second electrodes are respectively a connecting electrode and a disconnecting electrode, the connecting electrode pad is electrically connected with the connecting electrode, and the disconnecting electrode pad is insulated from the disconnecting electrode at intervals; the repairing method of the display device comprises the following steps:
detecting the light-emitting state of a light-emitting device and judging whether the light-emitting state of the light-emitting device is normal or not;
when the light emitting state of the light emitting device is abnormal, cutting off the electrical connection between the connection electrode pad and the second signal line;
and electrically connecting the disconnecting electrode pad with the disconnecting electrode.
According to the technical scheme, the first semiconductor layer and the second semiconductor layer are stacked, so that the area of the composite light-emitting layer between the first semiconductor layer and the second semiconductor layer is larger, and the light-emitting area can be increased. Through setting up two at least second semiconductor layers and two at least compound luminescent layer, and be equipped with a second electrode on each second semiconductor layer, then can make one of them second electrode and array substrate carry out the electricity when connecting and be connected, other second electrodes remain unsettled state to when the second electrode that is connected with array substrate electricity, second semiconductor layer or compound luminescent layer appear the bad condition and lead to luminous anomaly, can turn over to be connected array substrate and other second electrodes electricity, in order to realize through other second semiconductor layer and compound luminescent layer effect with the improvement luminous yield, improve the effect of display device's display quality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a cross-sectional view of an example of a light-emitting device according to an embodiment of the present invention;
FIG. 2 is a top view of an example of a light emitting device according to an embodiment of the present invention;
fig. 3 is a cross-sectional view of another example of a light-emitting device according to an embodiment of the present invention;
FIG. 4 is a top view of another example of a light emitting device according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of an example of a display device according to a second embodiment of the present invention;
fig. 6 is a schematic structural diagram of an array substrate and a first electrode pad and a second electrode pad disposed on the array substrate in a display device according to a second embodiment of the invention;
fig. 7 is a cross-sectional view of another example of a display device according to the second embodiment of the present invention;
fig. 8 is a schematic structural diagram of another example of an array substrate and a first electrode pad and a second electrode pad disposed on the array substrate in a display device according to a second embodiment of the present invention;
fig. 9 is a flowchart of a repairing method of a third display device according to an embodiment of the invention.
Reference numerals illustrate:
reference numerals Name of the name Reference numerals Name of the name
100 Light emitting device 110 Substrate
120 First semiconductor layer 130 First electrode
140 Second semiconductor layer 150 Second electrode
151 Connection electrode 152 Disconnecting electrode
160 Composite luminous layer 200 Array substrate
300 First electrode pad 400 Second electrode pad
410 Connection electrode pad 420 Breaking electrode pad
500 First signal line 600 Second signal line
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
Embodiment one:
the present invention proposes a light emitting device 100.
In the embodiment of the invention, referring to fig. 1 to 4 in combination, the light emitting device 100 includes a substrate 110, a first semiconductor layer 120, a first electrode 130, a second semiconductor layer 140, a second electrode 150, and a composite light emitting layer 160, wherein the first semiconductor layer 120 and the second semiconductor layer 140 are stacked on one side of the substrate 110, the composite light emitting layer 160 is disposed between the first semiconductor layer 120 and the second semiconductor layer 140, the first electrode 130 is disposed on the first semiconductor layer 120, the second electrode 150 is disposed on the second semiconductor layer 140, at least two second semiconductor layers 140 and the composite light emitting layer 160 are disposed, and each composite light emitting layer 160 is connected to a second semiconductor layer 140 and the first semiconductor layer 120, and a second electrode 150 is disposed on each second semiconductor layer 140.
The first semiconductor layer 120 may be an N-type semiconductor layer, and the second semiconductor layer 140 may be a P-type semiconductor layer, where the first electrode 130 corresponds to an N-electrode and the second electrode 150 corresponds to a P-electrode; alternatively, the first semiconductor layer 120 may be a P-type semiconductor layer, and the second semiconductor layer 140 may be an N-type semiconductor layer, where the first electrode 130 corresponds to a P-electrode and the second electrode 150 corresponds to an N-electrode. It should be understood that the N-type semiconductor layer, the P-type semiconductor layer, the composite light emitting layer 160, the N-electrode, and the P-electrode are prone to poor process conditions during the process, and the process yields of different manufacturers for different semiconductor layers and different electrode layers may also be different, and it should be noted that the first semiconductor layer 120 may be an N-type semiconductor layer and the second semiconductor layer 140 may be a P-type semiconductor layer selectively according to the different process yields of different manufacturers before the process; or the first semiconductor layer 120 is a P-type semiconductor layer and the second semiconductor layer 140 is an N-type semiconductor layer. For example, some manufacturers may keep the process yield of the P-type semiconductor layer better, but the process yield of the N-type semiconductor layer is worse, so that the first semiconductor layer 120 is the P-type semiconductor layer, the second semiconductor layer 140 is the N-type semiconductor layer, the first electrode 130 is the P-electrode, and the second electrode 150 is the N-electrode, and by providing at least two second semiconductor layers 140, i.e. providing at least two N-type semiconductor layers, and further providing at least two N-electrodes (i.e. the second electrodes 150), one of the second electrodes 150 may be electrically connected to the array substrate 200, and the other second electrodes 150 are not electrically connected to the array substrate 200, i.e. the other second electrodes 150 are in a suspended state. When testing the performance of the light emitting device 100, if the light emitting device 100 emits light normally, the electrical connection relationship between the light emitting device 100 and the array substrate 200 is not changed; if the light emitting device 100 is not bright or light emission is abnormal, it indicates that the second semiconductor layer 140 conducted with the array substrate 200 or the composite light emitting layer 160 or the second electrode 150 stacked with the second semiconductor layer 140 is abnormal, so that the electrical connection relationship between the second electrode 150 electrically connected with the array substrate 200 and the array substrate 200 can be cut off, and the array substrate 200 is electrically connected with the second electrode 150, so that the other second semiconductor layers 140 and the composite light emitting layer 160 are conducted, at this time, the light emission yield of the light emitting device 100 can be improved, and the display quality of the display device can be improved. Of course, some manufacturers may keep the process yield of the N-type semiconductor layer better, but the process yield of the P-type semiconductor layer is worse, so that the first semiconductor layer 120 is the N-type semiconductor layer, the second semiconductor layer 140 is the P-type semiconductor layer, the first electrode 130 is the N electrode, the second electrode 150 is the P electrode, that is, at least two P-type semiconductor layers, the composite light-emitting layer 160 and the P electrode are provided, which can similarly improve the light-emitting yield of the light-emitting device 100 and improve the display quality of the display device. It should be noted that, before the process, the first semiconductor layer 120 is an N-type semiconductor layer and the second semiconductor layer 140 is a P-type semiconductor layer selectively according to different process yields of different manufacturers; or the first semiconductor layer 120 is a P-type semiconductor layer and the second semiconductor layer 140 is an N-type semiconductor layer.
Specifically, when the second semiconductor layer 140 is provided with at least two, the at least two second semiconductor layers 140 may be stacked in a direction perpendicular to the substrate 110 and located at opposite sides of the first semiconductor layer 120; alternatively, in other embodiments, at least two second semiconductor layers 140 may be disposed at equal intervals, so that the composite light-emitting layer 160 is also disposed at equal intervals, and the projection of the first semiconductor layer 120 on the substrate 110 partially coincides with the projection of at least two second semiconductor layers 140 disposed at equal intervals on the substrate 110.
In the present invention, by stacking the first semiconductor layer 120 and the second semiconductor layer 140, the area of the composite light emitting layer 160 between the first semiconductor layer 120 and the second semiconductor layer 140 is larger, so that the light emitting area can be increased. By arranging at least two second semiconductor layers 140 and at least two composite light-emitting layers 160, and arranging a second electrode 150 on each second semiconductor layer 140, one of the second electrodes 150 can be electrically connected with the array substrate 200 during connection, and the other second electrodes 150 can be kept in a suspended state, so that when the second electrode 150, the second semiconductor layer 140 or the composite light-emitting layer 160 electrically connected with the array substrate 200 has a bad condition to cause abnormal light emission, the array substrate 200 can be electrically connected with the other second electrodes 150 in turn, thereby realizing the effect of improving the light-emitting yield and the display quality of the display device through the action of the other second semiconductor layers 140 and the composite light-emitting layer 160.
In an example, referring to fig. 1 or fig. 3, a second semiconductor layer 140 is disposed on a side of the first semiconductor layer 120 facing the substrate 110 and a side of the first semiconductor layer facing away from the substrate 110, respectively, and a composite light emitting layer 160 is disposed between the first semiconductor layer 120 and each of the second semiconductor layers 140.
By doing so, the different first and second semiconductor layers 120 and 140 are stacked in a direction perpendicular to the substrate 110, so that each semiconductor layer and the composite light emitting layer 160 are ensured to have a larger area on the substrate 110 with a certain area, thereby improving the light emitting area, and improving the light emitting brightness and efficiency.
Specifically, referring to fig. 1 to 4 in combination, a projection area S1 of the second electrode 150 layer disposed on the side of the first semiconductor layer 120 facing the substrate 110 on the substrate 110 is defined; defining a projection area S2 of the second electrode 150 layer disposed on the side of the first semiconductor layer 120 facing away from the substrate 110 on the substrate 110; a projection area of the first semiconductor layer 120 on the substrate 110 is defined as S3, wherein S1 & gt S3 & gt S2.
By this arrangement, the respective layer structures on the substrate 110 are formed in a stepped shape, thereby ensuring that a certain space is provided for the electrode layer on each semiconductor layer.
Of course, in other embodiments, S2 may also be equal to S3, with S1 being greater than S2 and S3. Specifically, the second semiconductor layer 140 and the composite light-emitting layer 160 on the side of the first semiconductor layer 120 facing away from the substrate 110 may be disposed in a staggered manner with respect to the first semiconductor layer 120, and a supporting block is disposed between the composite light-emitting layer 160 on the side of the first semiconductor layer 120 facing away from the substrate 110 and the second semiconductor layer 140 on the side of the first semiconductor layer 120 facing towards the substrate 110, so as to ensure that the supporting block can provide a supporting base for the composite light-emitting layer 160 on the side of the first semiconductor layer 120 facing away from the substrate 110 during the process. In addition, by setting S2 equal to S3, both the second electrodes 150 are made to have the same light emitting area after being electrically connected with the array substrate 200.
Further, referring to fig. 1 or 3, the two second electrodes 150 are not disposed flush on a side facing away from the substrate 110.
By disposing the two second electrodes 150 at the side facing away from the substrate 110 in a non-flush manner, the projection of one second electrode 150 in the plane perpendicular to the substrate 110 is higher than the projection of the other second electrode 150 in the plane perpendicular to the substrate 110, so that when the light emitting device 100 is connected with the array substrate 200, and the second electrode 150 with the higher projection in the plane perpendicular to the substrate 110 can be conducted with the array substrate 200, it can be ensured that the second electrode 150 with the lower projection in the plane perpendicular to the substrate 110 is not conducted with the array substrate 200, thereby ensuring the stability of light emission of the light emitting device 100. Of course, it is also possible to conduct one of the second electrodes 150 having a lower projection in a plane perpendicular to the base 110 with the array substrate 200, while the other second electrode 150 having a higher projection in a plane perpendicular to the base 110 is not conducted with the array substrate 200.
Further, referring to fig. 1 or fig. 3 in combination, a side of the first electrode 130 facing away from the substrate 110 is disposed flush with a side of one of the two second electrodes 150 facing away from the substrate 110.
By arranging the side of the first electrode 130 facing away from the substrate 110 and the side of one of the two second electrodes 150 facing away from the substrate 110 in a flush manner, when the first electrode 130 and one of the second electrodes 150 of the light emitting device 100 are connected with the array substrate 200, the first electrode 130 and the second electrode 150 with the same height can simultaneously complete the connection effect with the array substrate 200, thereby improving the connection efficiency of the light emitting device 100 and the array substrate 200.
As shown in fig. 1, based on the above-mentioned scheme that the side of the first electrode 130 facing away from the substrate 110 is disposed flush with the side of one of the two second electrodes 150 facing away from the substrate 110, further, the side of the first electrode 130 facing away from the substrate 110 is higher than the side of the other of the two second electrodes 150 facing away from the substrate 110.
By doing so, the projection of the first electrode 130 on the plane perpendicular to the substrate 110 is flush with the projection of one of the second electrodes 150 on the plane perpendicular to the substrate 110 and higher than the projection of the other second electrode 150 on the plane perpendicular to the substrate 110, so that it is possible to ensure that the first electrode 130 of the light emitting device 100 is electrically connected to the array substrate 200 while avoiding that the other of the two second electrodes 150 is electrically connected to the array substrate 200, thereby ensuring the stability of the electrical connection of the light emitting device 100.
Further, referring to fig. 1 to 4, two second electrodes 150 are disposed adjacent to each other.
By disposing two second electrodes 150 adjacent to each other, it is convenient to lay out a circuit for electrically connecting with the second electrodes 150 on the array substrate 200, and the risk of complicated and easy short-circuiting of the circuit on the array substrate 200 is reduced.
In another example, referring to fig. 3 and fig. 4 in combination, at least two first semiconductor layers 120 are also provided, a second semiconductor layer 140 is disposed between the at least two first semiconductor layers 120, a composite light emitting layer 160 is disposed between each second semiconductor layer 140 and each first semiconductor layer 120, a first electrode 130 is disposed on each first semiconductor layer 120, and a side of the at least two first electrodes 130 facing away from the substrate 110 is not level.
By providing at least two first semiconductor layers 120, and further providing at least two first electrodes 130, one of the first electrodes 130 may be electrically connected to the array substrate 200, and the remaining first electrodes 130 are not electrically connected to the array substrate 200, i.e., the remaining first electrodes 130 are in a suspended state. When testing the performance of the light emitting device 100, if the light emitting device 100 emits light normally, the electrical connection relationship between the light emitting device 100 and the array substrate 200 is not changed; if the light emitting device 100 is not bright or light emission is abnormal, it indicates that the first semiconductor layer 120 conducted with the array substrate 200 or the composite light emitting layer 160 or the first electrode 130 stacked with the first semiconductor layer 120 is abnormal, so that the electrical connection relationship between the first electrode 130 electrically connected with the array substrate 200 and the array substrate 200 can be cut off, and the array substrate 200 is electrically connected with the first electrode 130, so that the other first semiconductor layers 120 and the composite light emitting layer 160 are conducted, and at this time, the light emission yield of the light emitting device 100 can be improved, and the display quality of the display device can be improved.
In addition, based on the above-mentioned scheme that at least two second semiconductor layers 140 are also provided, in this example, at least two first semiconductor layers 120 are further provided, so that the method is suitable for the situation that the process of the first semiconductor layers 120 is easy to generate a defect, and is also suitable for the situation that the process of the second semiconductor layers 140 is easy to generate a defect, when one of the processes of the first semiconductor layers 120 is bad, the compensation can be performed by other first semiconductor layers 120, so that the first semiconductor layers 120 and the first electrodes 130 are electrically connected with the array substrate 200, thereby further ensuring that the light emitting device 100 emits light normally, and improving the display quality and the display yield of the display device.
Specifically, at least two first semiconductor layers 120 may be disposed at the same layer and at a distance, or as shown in fig. 3, at least two first semiconductor layers 120 are disposed stacked in a direction perpendicular to the substrate 110, and a second semiconductor layer 140 is disposed between every two adjacent first semiconductor layers 120, and a composite light emitting layer 160 is disposed between each first semiconductor layer 120 and between each second semiconductor layer 140. When at least two first semiconductor layers 120 are stacked in a direction perpendicular to the substrate 110, the area of the composite light emitting layer 160 between the first semiconductor layers 120 and the second semiconductor layers 140 can be ensured to be larger on the premise that the area of the substrate 110 is limited, so that the effect of increasing the light emitting area can be achieved.
Embodiment two:
the present invention also proposes a display device, please refer to fig. 5 to 8, which includes an array substrate 200 and a light emitting device 100, and the specific structure of the light emitting device 100 refers to the above embodiment. The array substrate 200 is provided with a first electrode pad 300 and a second electrode pad 400, wherein the first electrode pad 300 is electrically connected with a first electrode 130, and the second electrode pad 400 is electrically connected with a second electrode 150.
By disposing the first electrode pad 300 and the second electrode pad 400 on the array substrate 200, the first electrode pad 300 is electrically connected with a first electrode 130, and the second electrode pad 400 is electrically connected with a second electrode 150, so that the light emitting device 100 can be ensured to emit light normally, and the display device can be ensured to have better display quality.
Specifically, when the light emitting device 100 of the above embodiment is adopted based on the light emitting device 100, since the second electrode 150 of the light emitting device 100 is provided with at least two, and different second electrodes 150 are connected to different second semiconductor layers 140 and the composite light emitting layer 160, the second electrode pad 400 is electrically connected to only one of the second electrodes 150, thereby ensuring a normal light emitting effect. When one of the second electrodes 150, the second semiconductor layer 140 or the composite light emitting layer 160 is defective, the second electrode pad 400 may be disconnected from the second electrode 150 and electrically connected to the other second electrode 150. Alternatively, in other embodiments, at least two second electrode pads 400 are provided, and when one of the second electrodes 150, the second semiconductor layer 140 or the composite light emitting layer 160 is ill-processed, the front end signal of the second electrode pad 400 may be cut off, so that the other second electrode pads 400 are electrically connected to the other second electrodes 150.
In this example, referring to fig. 6 or 8, the array substrate 200 is further provided with two second signal lines 600, two second electrode pads 400 are spaced apart, and the two second electrode pads 400 are connected to the second signal lines 600 in parallel.
By arranging the two second electrode pads 400 at intervals, each second electrode pad 400 can be correspondingly and electrically connected with one second electrode 150, when a pair of second electrode pads 400 and second electrodes 150 are in a mutually connected state and abnormal luminescence is found during testing, the electrical connection relationship between the second electrode pad 400 which is in connection with filling and the second signal line 600 can be cut off immediately, and the other second electrode pad 400 is electrically connected with the other second electrode 150 in turn, so that compensation measures are provided for the light-emitting device 100 to emit light normally again, the effect that more light-emitting devices 100 can maintain normal luminescence is achieved, and the display quality and yield of the display device are improved. In addition, by connecting both the second electrode pads 400 to the second signal line 600 in this example, the routing on the array substrate 200 can be simplified, and the risk of short circuit can be avoided. It should be noted that the second signal line 600 is used to provide an electrical signal to the second electrode pad 400.
It is understood that, as shown in fig. 8, the array substrate 200 may further be provided with a first signal line 500, and the first electrode pad 300 is electrically connected to the first signal line 500, so that the first signal line 500 can provide an electrical signal to the first electrode pad 300. Of course, when two first semiconductor layers 120 and two first electrodes 130 of the light emitting device 100 are also provided, two first electrode pads 300 on the array substrate are also provided at intervals, and the two first electrode pads 300 are connected in parallel to the first signal line 500.
By arranging the two first electrode pads 300 at intervals, each first electrode pad 300 can be correspondingly and electrically connected with one first electrode 130, when a pair of first electrode pads 300 and first electrodes 130 are in a mutually connected state, and when abnormal luminescence is found during testing, the electrical connection relationship between the first electrode pad 300 in the connected state and the first signal line 500 can be cut off immediately, and the other first electrode pad 300 is electrically connected with the other first electrode 130 in turn, so that compensation measures are provided for the light-emitting device 100 to emit light normally again, the effect that more light-emitting devices 100 can maintain normal luminescence is achieved, and the display quality and yield of the display device are improved. In addition, by connecting both the first electrode pads 300 to the first signal line 500 in this example, the routing on the array substrate 200 can be simplified, and the risk of short circuit can be avoided. It should be noted that the first signal line 500 is used to provide an electrical signal to the first electrode pad 300.
Embodiment III:
the present invention also provides a method for repairing a display device, please refer to fig. 5 to 9 in combination, and the specific structure of the display device refers to the above embodiment. Wherein, two of the at least two second electrode pads 400 of the display device are a connection electrode pad 410 and a disconnection electrode pad 420, respectively, two of the at least two second electrodes 150 are a connection electrode 151 and a disconnection electrode 152, respectively, the connection electrode pad 410 is electrically connected with the connection electrode 151, and the disconnection electrode pad 420 is insulated from the disconnection electrode 152 at intervals; the repairing method of the display device comprises the following steps:
step 10: detecting the light emitting state of the light emitting device 100 and judging whether the light emitting state of the light emitting device 100 is normal;
step 20: when the light emitting state of the light emitting device 100 is abnormal, the electrical connection between the connection electrode pad 410 and the second signal line 600 is cut off;
step 30: the break electrode pad 420 is electrically connected with the break electrode 152.
The light emitting device 100 has an initial state, and when the light emitting device 100 is in the initial state, the connection electrode 151 is in an electrically connected state with the connection electrode pad 410 of the array substrate, and when it is detected that the light emitting state of the light emitting device 100 is abnormal, it is indicated that at least one of the connection electrode 151, the second semiconductor layer 140 connected to the connection electrode 151, or the composite light emitting layer 160 connected to the second semiconductor layer 140 on the light emitting device 100 has a process failure. In order to ensure that the light emitting device 100 can still emit light normally, the electrical connection between the connection electrode 151 and the connection electrode pad 410 on the light emitting device 100 may be cut off, or the electrical connection between the connection electrode pad 410 and the second signal line 600 may be cut off, and further the disconnection electrode 152 and the disconnection electrode pad 420 may be electrically connected, so that another set of the second electrode 150, the second semiconductor layer 140, and the composite light emitting layer, which are connected to each other, may be used instead, thereby realizing an effect of repairing the light emitting device 100 so as to make it display normally, and the repairing process may be simple and rapid.
In addition, in the present invention, by cutting off the electrical connection between the connection electrode pad 410 and the second signal line 600, the operation is facilitated, and the situation that the operation is difficult due to the small gap between the connection electrode pad 410 and the connection electrode 151 is avoided. Specifically, the electrical connection between the connection electrode pad 410 and the second signal line 600 may be cut by a laser or by another tool. In addition, when the break electrode pad 420 and the break electrode 152 are electrically connected, the two may be electrically connected by solder or conductive paste.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.

Claims (10)

1. The light-emitting device comprises a substrate, a first semiconductor layer, a first electrode, a second semiconductor layer, a second electrode and a composite light-emitting layer, wherein the first semiconductor layer and the second semiconductor layer are laminated on one side of the substrate, the composite light-emitting layer is arranged between the first semiconductor layer and the second semiconductor layer, the first electrode is arranged on the first semiconductor layer, and the second electrode is arranged on the second semiconductor layer.
2. The light-emitting device according to claim 1, wherein the first semiconductor layer is provided with a second semiconductor layer on a side facing the substrate and a side facing away from the substrate, respectively, and the composite light-emitting layer is provided between the first semiconductor layer and each of the second semiconductor layers.
3. The light-emitting device according to claim 2, wherein a projected area of the second electrode layer provided on a side of the first semiconductor layer facing the substrate on the substrate is defined as S1;
defining the projection area of the second electrode layer arranged on one side of the first semiconductor layer away from the substrate on the substrate as S2;
defining the projection area of the first semiconductor layer on the substrate as S3, wherein S1 & gt S3 & gt S2.
4. The light-emitting device according to claim 2, wherein a side of the two second electrodes facing away from the substrate is not disposed flush.
5. The light-emitting device according to claim 4, wherein a side of the first electrode facing away from the substrate is disposed flush with a side of one of the two second electrodes facing away from the substrate;
and/or, two second electrodes are adjacently arranged.
6. The light-emitting device according to any one of claims 1 to 5, wherein at least two first semiconductor layers are provided, one second semiconductor layer is provided between at least two first semiconductor layers, one composite light-emitting layer is provided between each second semiconductor layer and each first semiconductor layer, one first electrode is provided on each first semiconductor layer, and at least two first electrodes are not arranged flush on a side facing away from the substrate.
7. The light-emitting device according to claim 6, wherein at least two of the first semiconductor layers are stacked in a direction perpendicular to the substrate, and a second semiconductor layer is provided between each adjacent two of the first semiconductor layers, and a composite light-emitting layer is provided between each of the first semiconductor layers and between each of the second semiconductor layers.
8. A display device comprising an array substrate and a light emitting device according to any one of claims 1 to 7, wherein a first electrode pad and a second electrode pad are provided on the array substrate, the first electrode pad being electrically connected to a first electrode, and the second electrode pad being electrically connected to a second electrode.
9. The display device according to claim 8, wherein a second signal line is further provided on the array substrate, at least two second electrode pads are provided at intervals, and at least two second electrode pads are connected to the second signal line in parallel.
10. A repair method based on the display device according to claim 9, wherein two of the at least two second electrode pads are a connection electrode pad and a disconnection electrode pad, respectively, two of the at least two second electrodes are a connection electrode and a disconnection electrode, respectively, the connection electrode pad is electrically connected to the connection electrode, and the disconnection electrode pad is spaced apart from the disconnection electrode; the repairing method of the display device comprises the following steps:
detecting the light-emitting state of a light-emitting device and judging whether the light-emitting state of the light-emitting device is normal or not;
when the light emitting state of the light emitting device is abnormal, cutting off the electrical connection between the connection electrode pad and the second signal line;
and electrically connecting the disconnecting electrode pad with the disconnecting electrode.
CN202310647252.2A 2023-05-31 2023-05-31 Light emitting device, display apparatus, and repair method of display apparatus Pending CN116666521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310647252.2A CN116666521A (en) 2023-05-31 2023-05-31 Light emitting device, display apparatus, and repair method of display apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310647252.2A CN116666521A (en) 2023-05-31 2023-05-31 Light emitting device, display apparatus, and repair method of display apparatus

Publications (1)

Publication Number Publication Date
CN116666521A true CN116666521A (en) 2023-08-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310647252.2A Pending CN116666521A (en) 2023-05-31 2023-05-31 Light emitting device, display apparatus, and repair method of display apparatus

Country Status (1)

Country Link
CN (1) CN116666521A (en)

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