CN116633130A - Charge pump filter circuit - Google Patents

Charge pump filter circuit Download PDF

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Publication number
CN116633130A
CN116633130A CN202310698872.9A CN202310698872A CN116633130A CN 116633130 A CN116633130 A CN 116633130A CN 202310698872 A CN202310698872 A CN 202310698872A CN 116633130 A CN116633130 A CN 116633130A
Authority
CN
China
Prior art keywords
voltage
charge pump
power supply
filter circuit
pmos tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310698872.9A
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Chinese (zh)
Inventor
杨光军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority to CN202310698872.9A priority Critical patent/CN116633130A/en
Publication of CN116633130A publication Critical patent/CN116633130A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/14—Arrangements for reducing ripples from dc input or output
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a charge pump filter circuit, comprising: the first PMOS tube and the first capacitor. The source electrode of the first PMOS tube is connected with the output end of the charge pump. The drain electrode of the first PMOS tube is connected with the first end of the first capacitor and is used as an output end of the output voltage. The second end of the first capacitor is grounded. The grid electrode of the first PMOS tube is connected with a first node, the voltage of the first node is a first voltage, and the first PMOS tube has a first on-resistance. The power supply end of the charge pump is connected with a power supply voltage. The first voltage is proportional to the supply voltage such that the first on-resistance is regulated by the magnitude of the supply voltage. When the power supply voltage increases, the voltage of the first node increases, the first on-resistance increases, and the filtering effect increases. When the power supply voltage decreases, the voltage of the first node decreases, the first on-resistance decreases, and the driving capability increases. The invention can ensure the driving capability under low pressure and reduce the ripple defect under high pressure.

Description

Charge pump filter circuit
Technical Field
The present invention relates to a semiconductor integrated circuit, and more particularly, to a charge pump filter circuit.
Background
With the development of semiconductor technology, the operating voltage of the device is lower and lower, and the power supply voltage required for the operation of the memory is continuously reduced to be lower than 2.5V, 1.8V or 1V. However, the program and erase voltages of the memory will be much greater than the supply voltage, i.e., the program and erase voltages of the memory will be high relative to the supply voltage, and charge pump circuitry is typically required to convert the supply voltage to the desired program or erase voltage, and in integrated circuits, both positive and negative voltages are often required.
As shown in fig. 1, a structure diagram of a conventional charge pump circuit is shown; the power supply terminal of the charge pump 101 is connected to a power supply voltage VCC, and the magnitude of the power supply voltage VCC is 1.6V to 5.5V as also shown in fig. 1. The charge pump is controlled by the switch circuit, and charges the capacitor to enable the voltage between two electrodes of the capacitor to generate a voltage difference; when the capacitor stores charges, when the voltage of one electrode suddenly changes, the voltage of the other electrode also suddenly changes, so that the voltage difference between the two electrodes is kept unchanged, when the voltage of the one electrode is the power supply voltage VCC, the voltage of the other electrode is larger than the power supply voltage VCC, so that the voltage is increased, and the output voltage Vout which is much larger than the power supply voltage VCC can be obtained at the output end through cascading of a plurality of charge pump units. The magnitude of the output voltage Vout is determined according to the needs of a chip such as a memory including a flash memory.
In the existing charge pump circuit, in order to ensure the driving capability under low voltage, the ripple (ripple) of high voltage is relatively large, which affects the performance and reliability of the chip. As shown in fig. 2, the waveform curves of the output voltages of the prior charge pump circuit under different power supply voltages are shown; when vcc=1.6v, in the curve 102, the ripple of the output voltage Vout is small, but since the power supply voltage VCC is small, the driving capability of the charge pump needs to be ensured.
When vcc=5.5v, the ripple of the output voltage Vout is large in the curve 103, although it has a large driving capability.
Therefore, in order to secure the driving capability (driving capability) requirement at low voltage, that is, when VCC is low, the driving capability of the charge pump needs to be increased; however, when the driving capability of the charge pump is increased, in an application where the high voltage VCC is high, a defect that the output voltage Vout is dithered, i.e., ripple is large, occurs.
Disclosure of Invention
The invention aims to solve the technical problem of providing a charge pump filter circuit which can ensure the driving capability under low voltage and reduce the ripple defect under high voltage.
In order to solve the above technical problems, the charge pump filter circuit provided by the present invention includes: the first PMOS tube and the first capacitor.
And the source electrode of the first PMOS tube is connected with the output end of the charge pump.
The drain electrode of the first PMOS tube is connected with the first end of the first capacitor, and the drain electrode of the first PMOS tube is an output end for outputting voltage.
The second end of the first capacitor is grounded.
The grid electrode of the first PMOS tube is connected with a first node, the voltage of the first node is a first voltage, and the first PMOS tube has a first on-resistance.
And the power end of the charge pump is connected with a power supply voltage.
The first voltage is proportional to the power supply voltage such that the first on-resistance is regulated by the power supply voltage.
When the power supply voltage increases, the voltage of the first node increases, and the first on-resistance increases, so that the filtering effect of the filtering circuit increases.
When the power supply voltage is reduced, the voltage of the first node is reduced, and the first on-resistance is reduced, so that the driving capability of the charge pump is increased.
A further improvement is that the first voltage is obtained by a first voltage divider circuit.
The first voltage dividing circuit is connected between the power supply voltage and ground.
The first voltage dividing circuit comprises a series structure formed by connecting a plurality of diode-connected MOS transistors in series, and the first node is led out from one series point in the series structure.
The further improvement is that each MOS transistor in the series structure adopts a PMOS tube. And the grid electrode and the drain electrode of each MOS transistor are in short circuit to realize diode connection.
A further improvement is that the number of MOS transistors in the series structure comprises 2.
The first voltage dividing circuit is characterized by further comprising a switching tube, wherein the switching tube is connected with the series structure in series, and the switching tube controls the on and off of the first voltage dividing circuit.
The control end of the switching tube is connected with a first control signal, and when the output voltage is greater than or equal to a set value, the switching tube is closed by the first control signal; when the output voltage is smaller than a set value, the first control signal enables the switch tube to be conducted.
The further improvement is that the switch tube is composed of a second PMOS tube.
And the source electrode of the second PMOS tube is connected with the power supply voltage.
The drain electrode of the second PMOS tube is connected with the first end of the series structure, and the second end of the series structure is grounded.
A further improvement is that the first control signal is an inverse of the feedback signal of the charge pump.
A further improvement is that the charge pump further comprises a feedback circuit, which outputs the feedback signal.
When the output voltage is greater than or equal to a set value, the feedback signal is at a low level.
When the output voltage is smaller than a set value, the feedback signal is in a high level.
Further improvement is that the method further comprises: and the input end of the first inverter is connected with the feedback signal, and the output end of the first inverter outputs the first control signal.
Further improvement is that the variation range of the power supply voltage comprises 1.6V-5.5V.
The invention sets the filter circuit at the output end of the charge pump, the resistance of the filter circuit adopts the first on-resistance formed by the first PMOS tube, and the first voltage provided to the grid electrode of the first PMOS tube is set to be proportional to the power supply voltage, because the magnitude of the first on-resistance can change along with the change of the first voltage, the magnitude of the first on-resistance can change along with the change of the power supply voltage, when the power supply voltage increases, the source grid voltage of the first PMOS tube can be reduced, the first on-resistance can be increased, thus being beneficial to improving the filter effect of the filter circuit formed by the first on-resistance and the first capacitor, so that the filter effect can be improved when the power supply voltage is higher, and the ripple defect of the output voltage under high voltage can be reduced; when the power supply voltage is reduced, the source gate voltage of the first PMOS tube is increased, so that the first on-resistance is reduced, and the driving capability of the charge pump is increased.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a block diagram of a prior art charge pump circuit;
FIG. 2 is a waveform plot of output voltages of a prior art charge pump circuit at different supply voltages;
fig. 3 is a block diagram of a charge pump filter circuit of the present invention.
Detailed Description
As shown in fig. 3, a filter circuit of the charge pump 201 of the present invention is shown in block diagram; the charge pump filter circuit of the embodiment of the invention comprises: the first PMOS tube MP1 and the first capacitor C1. The first PMOS MP1 and the first capacitor C1 form a main body 202 of the filter circuit.
The source electrode of the first PMOS MP1 is connected to the output end of the charge pump 201.
The drain electrode of the first PMOS transistor MP1 is connected to the first end of the first capacitor C1, and the drain electrode of the first PMOS transistor MP1 is an output end of the output voltage Vout.
The second end of the first capacitor C1 is grounded.
The grid electrode of the first PMOS tube MP1 is connected with a first node, the voltage of the first node is a first voltage V1, and the first PMOS tube MP1 has a first on-resistance.
The power supply terminal of the charge pump 201 is connected to a power supply voltage VCC.
In some embodiments, the power supply voltage VCC varies from 1.6V to 5.5V.
The first voltage V1 is proportional to the power supply voltage VCC, so that the first on-resistance is regulated by the magnitude of the power supply voltage VCC.
When the power supply voltage VCC increases, the voltage of the first node increases, and the first on-resistance increases, so that the filtering effect of the filtering circuit increases.
When the power supply voltage VCC decreases, the voltage of the first node decreases, and the first on-resistance decreases, so that the driving capability of the charge pump 201 increases.
In the embodiment of the present invention, the first voltage V1 is obtained by the first voltage dividing circuit 203.
The first voltage dividing circuit 203 is connected between the power supply voltage VCC and ground.
In some embodiments, the first voltage divider 203 includes a series structure 204 formed by connecting a plurality of diode-connected MOS transistors in series, and the first node is led from one series point in the series structure 204. Further, each MOS transistor in the series structure 204 adopts a PMOS transistor, and the gate and the drain of each MOS transistor are shorted to realize diode connection. Further, the number of MOS transistors in the series structure 204 includes 2. In fig. 3, two of the MOS transistors in the series structure 204 are denoted MP3 and MP4, respectively.
In the embodiment of the present invention, the first voltage dividing circuit 203 further includes a switching tube 205, and the switching tube 205 is connected in series with the serial structure 204, where the switching tube 205 controls on and off of the first voltage dividing circuit 203.
The control end of the switching tube 205 is connected with a first control signal, and when the output voltage Vout is greater than or equal to a set value, the first control signal turns off the switching tube 205; when the output voltage Vout is smaller than a set value, the first control signal turns on the switching tube 205.
In some embodiments, the switch tube 205 is composed of a second PMOS tube MP 2.
And the source electrode of the second PMOS tube MP2 is connected with the power supply voltage VCC.
The drain electrode of the second PMOS MP2 is connected to the first end of the series structure 204, and the second end of the series structure 204 is grounded. In fig. 3, the first end of the series structure 204 is a source of the PMOS MP3, and the second end of the series structure 204 is a drain of the PMOS MP 4.
In some embodiments, the first control signal employs an inverse of the feedback signal FB of the charge pump 201.
The charge pump 201 further includes a feedback circuit that outputs the feedback signal FB.
When the output voltage Vout is greater than or equal to a set value, the feedback signal FB is at a low level.
When the output voltage Vout is smaller than a set value, the feedback signal FB is at a high level.
Further comprises: the input end of the first inverter 206 is connected to the feedback signal FB, and the output end of the first inverter 206 outputs the first control signal.
The embodiment of the invention is provided with a filter circuit at the output end of the charge pump 201, the resistor of the filter circuit adopts a first on-resistance formed by a first PMOS tube MP1, and the first voltage V1 provided to the grid electrode of the first PMOS tube MP1 is set to be proportional to the power supply voltage VCC, because the magnitude of the first on-resistance can change along with the change of the first voltage V1, the magnitude of the first on-resistance can change along with the change of the power supply voltage VCC, when the power supply voltage VCC increases, the source gate voltage of the first PMOS tube MP1 can be reduced, the first on-resistance can be increased, thus being beneficial to improving the filtering effect of the filter circuit formed by the first on-resistance and the first capacitor C1, and being beneficial to improving the filtering effect when the power supply voltage VCC is higher, and reducing the ripple defect of the output voltage Vout under high voltage; when the power supply voltage VCC decreases, the source-gate voltage of the first PMOS MP1 increases, so that the first on-resistance decreases, and the driving capability of the charge pump 201 increases, so that the embodiment of the invention can also ensure the driving capability of the low voltage, i.e. the low power supply voltage VCC.
The present invention has been described in detail by way of specific examples, but these should not be construed as limiting the invention. Many variations and modifications may be made by one skilled in the art without departing from the principles of the invention, which is also considered to be within the scope of the invention.

Claims (10)

1. A charge pump filter circuit, the filter circuit comprising: the first PMOS tube and the first capacitor;
the source electrode of the first PMOS tube is connected with the output end of the charge pump;
the drain electrode of the first PMOS tube is connected with the first end of the first capacitor, and the drain electrode of the first PMOS tube is an output end for outputting voltage;
the second end of the first capacitor is grounded;
the grid electrode of the first PMOS tube is connected with a first node, the voltage of the first node is a first voltage, and the first PMOS tube has a first on-resistance;
the power end of the charge pump is connected with a power voltage;
the first voltage is proportional to the power supply voltage, so that the first on-resistance is regulated by the power supply voltage;
when the power supply voltage is increased, the voltage of the first node is increased, and the first on-resistance is increased, so that the filtering effect of the filtering circuit is increased;
when the power supply voltage is reduced, the voltage of the first node is reduced, and the first on-resistance is reduced, so that the driving capability of the charge pump is increased.
2. The charge pump filter circuit of claim 1, wherein: the first voltage is obtained by a first voltage dividing circuit;
the first voltage dividing circuit is connected between the power supply voltage and ground;
the first voltage dividing circuit comprises a series structure formed by connecting a plurality of diode-connected MOS transistors in series, and the first node is led out from one series point in the series structure.
3. The charge pump filter circuit of claim 2, wherein: and each MOS transistor in the series structure adopts a PMOS (P-channel metal oxide semiconductor) transistor, and the grid electrode and the drain electrode of each MOS transistor are in short circuit to realize diode connection.
4. A charge pump filter circuit as claimed in claim 3, characterized in that: the number of the MOS transistors in the series structure includes 2.
5. The charge pump filter circuit of claim 2, wherein: the first voltage dividing circuit further comprises a switching tube, the switching tube is connected with the series structure in series, and the switching tube controls the on and off of the first voltage dividing circuit;
the control end of the switching tube is connected with a first control signal, and when the output voltage is greater than or equal to a set value, the switching tube is closed by the first control signal; when the output voltage is smaller than a set value, the first control signal enables the switch tube to be conducted.
6. The charge pump filter circuit of claim 5, wherein: the switch tube consists of a second PMOS tube;
the source electrode of the second PMOS tube is connected with the power supply voltage;
the drain electrode of the second PMOS tube is connected with the first end of the series structure, and the second end of the series structure is grounded.
7. The charge pump filter circuit of claim 6, wherein: the first control signal is an inverse of a feedback signal of the charge pump.
8. The charge pump filter circuit of claim 7, wherein: the charge pump further comprises a feedback circuit, and the feedback circuit outputs the feedback signal;
when the output voltage is greater than or equal to a set value, the feedback signal is in a low level;
when the output voltage is smaller than a set value, the feedback signal is in a high level.
9. The charge pump filter circuit of claim 8, further comprising: and the input end of the first inverter is connected with the feedback signal, and the output end of the first inverter outputs the first control signal.
10. The charge pump filter circuit of claim 1, wherein: the variation range of the power supply voltage comprises 1.6V-5.5V.
CN202310698872.9A 2023-06-13 2023-06-13 Charge pump filter circuit Pending CN116633130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310698872.9A CN116633130A (en) 2023-06-13 2023-06-13 Charge pump filter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310698872.9A CN116633130A (en) 2023-06-13 2023-06-13 Charge pump filter circuit

Publications (1)

Publication Number Publication Date
CN116633130A true CN116633130A (en) 2023-08-22

Family

ID=87592041

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310698872.9A Pending CN116633130A (en) 2023-06-13 2023-06-13 Charge pump filter circuit

Country Status (1)

Country Link
CN (1) CN116633130A (en)

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